To see the other types of publications on this topic, follow the link: Electrical and dielectric properties.
Dissertations / Theses on the topic 'Electrical and dielectric properties'
Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles
Consult the top 50 dissertations / theses for your research on the topic 'Electrical and dielectric properties.'
Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.
You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.
Browse dissertations / theses on a wide variety of disciplines and organise your bibliography correctly.
1
Miller, Stuart M. "Electrical measurement of sucrose in sugar beet." Thesis, Cranfield University, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.294156.
Full text
2
Hollertz, Rebecca. "Dielectric properties of wood fibre components relevant for electrical insulation applications." Licentiate thesis, KTH, Fiberteknologi, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-144611.
Full text
3
Pevzner, Boris. "Transport and dielectric properties of thin fullerene (C₆₀) films." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/41403.
Full text
4
Lee, Hee Young. "Electrical transport properties of barium titanate-based capacitor ceramics." Diss., Virginia Polytechnic Institute and State University, 1987. http://hdl.handle.net/10919/77817.
Full textAbstract:
Electrical conduction mechanisms in BaTiO₃-based ferroelectric capacitor ceramics with an emphasis on the X7R type were studied. Dominant charge carriers in this material were identified as conduction band electrons below a temperature of 850°C. This was substantiated by the following results: negative Seebeck coefficients, zero galvanic cell voltage, and evidence of space charge-limited currents in MLC capacitors and related ceramic.
Effects of chip thickness on the electrical parameters, as well as the I-V characteristics, were studied. Chip electrical parameters such as resistivity, dielectric constant, and activation energy were found to be independent of chip thickness. Effects of ambient were also studied and differences in current-voltage behavior were attributed to surface effects.
Complex impedance spectroscopy proved to be a useful technique in separating grain, grain boundary, and contact contributions to the total impedance. Impedance plots for X7R ceramic revealed negligible contact impedance.
The most probable electrical transport mechanism in X7R ceramic is small polaron hopping, although the possibility of combining small polaron hopping and grain boundary transmission cannot be excluded.Ph. D.
5
Islam, M. H. "Studies of the optical and electrical properties of some dielectric oxide films." Thesis, Brunel University, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.378391.
Full text
6
Rajgadkar, Ajay. "Characterization of Dielectric Films for Electrowetting on Dielectric Systems." Scholar Commons, 2010. http://scholarcommons.usf.edu/etd/3607.
Full textAbstract:
Electrowetting is a phenomenon that controls the wettability of liquids on solid
surfaces by the application of electric potential. It is an interesting method to handle tiny
amounts of liquid on solid surfaces. In recent times, researchers have been investigating
this phenomenon and have reported some unexplained behavior and degradation in the
Electrowetting system performance. Electrowetting systems include the presence of
electric field and different materials from metals to dielectrics and electrolytes that create
an environment in which corrosion processes play a very important role. With the small
dimensions of the electrodes, corrosion can cause failure quickly when the dielectric fails.
In this work, commonly used dielectric films such as silicon dioxide and silicon
nitride were deposited using Plasma Enhanced Chemical Vapor Deposition and
characterized on the basis of thickness uniformity, etch rate measurements, Dry current –
voltage measurements and Wet current – voltage measurements. Sputtered silicon
dioxide films were also characterized using the same methods. The correlation between
Dry I – V and Wet I – V measurements was studied and a comparison of dielectric
quality of films based on these measurements is presented. Also, impact of different
liquids on the dielectric quality of films was studied.
7
Appello, Mario. "Real-time measurement of electrical properties during the processing of conductive polymers." Thesis, University of Warwick, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341559.
Full text
8
Mueller, Brennen. "Photo-definable dielectrics with improved lithographic, mechanical, and electrical properties." Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/53494.
Full textAbstract:
Permanent dielectric materials are integral to the fabrication of microelectronic devices and packaging. Dielectrics are used throughout devices to electrically and mechanically isolate conductive components. As such, they are required to have low electrical permittivity and robust mechanical properties. For packaging applications, dielectrics can be directly photo-definable. Dielectrics need to have excellent lithographic properties. These properties are pivotal for enabling high yield and low cost fabrication of reliable, energy efficient devices. The aim of this work was to develop new positive tone dielectrics which have improved or application-specific lithographic, mechanical, and electrical properties. To this end, several new dielectric polymers and chemistries were evaluated and characterized.
Initially, it was desired to develop a positive tone, polynorbornene (PNB) dielectric that utilizes diazonaphthoquinone (DNQ) photochemistry. Cross-linking was achieved with epoxy cross-linkers during a thermal cure. Several DNQ-containing compounds were evaluated, but only one had good miscibility with PNB. The dissolution characteristics of PNB were measured with respect to polymer composition, DNQ loading, and cross-linker loading. PNB films exhibited unique dissolution properties, and these measurements allowed for an optimum formulation to be developed. A formulation with 20 pphr DNQ and 10 pphr epoxy cross-linker had sufficient inhibition in unexposed regions and fast dissolution in exposed regions. The resulting dielectric was the first positive tone, DNQ-based PNB dielectric.
After achieving photo-definability, the cross-linking of the cured dielectric was evaluated by characterizing the mechanical properties. It was discovered that DNQ acted as a cross-linker in these films, and this insight was key to achieving good curing of the dielectric. Several experiments were performed to support this conclusions, and the reaction kinetics of this cross-linking reaction were evaluated. This effort produced a functional, positive tone dielectric with a sensitivity of 408 mJ cm-2 and contrast of 2.3. The modulus was 2.0 to 2.6 GPa and the dielectric constant of 3.7 to 3.9, depending on the curing conditions.
The DNQ cross-linking results led to the investigation of other cross-linking chemistries for positive tone dielectrics. A chemically amplified (CA) photochemistry was utilized along with a Fischer esterification cross-linking reaction. Patterning and cross-linking were demonstrated with a methacrylate polymer. Successful positive tone lithography was demonstrated at a high sensitivity of 32.4 mJ cm-2 and contrast of 5.2. Cross-linking was achieved at 120°C as shown by residual stress and solubility measurements.
The CA photochemistry and Fischer esterification cross-linking were also demonstrated using a PNB dielectric, which was shown to have improved lithographic properties: a sensitivity of 8.09 mJ cm-2 and contrast of ≥ 14.2. Work was performed to evaluate the effect of the polymer composition on the mechanical and electrical properties. A polymer with 60 mol% hexafluoroisopropanol norbornene and 40 mol% tert-butyl ester norbornene exhibited a dielectric constant of 2.78, which is lower than existing positive tone dielectrics. It also outperformed existing dielectrics in several other categories, including dark erosion, volume change, cure temperature, and in-plane coefficient of thermal expansion. However, a limitation of this dielectric was cracking in thick films.
The final study was to improve the mechanical properties of this CA PNB dielectric specifically to enable 5 µm thick films. First, a terpolymer was tested that included a non-functional third monomer. The dielectric constant increased to 3.48 with 24 mol% of the third monomer. Second, low molecular weight additives were used to lower the modulus. Only one of the five tested additives enabled high quality, thick films. This additive did not significantly affect the dielectric constant at low loadings. An optimized formulation was made, and processing parameters were studied. The additive decreased the lithographic properties, lowering the sensitivity to 175 mJ cm-2 and lowering the contrast to 4.36.
In all, this work produced three functional dielectrics with positive tone photo-definability and good lithographic properties. Each dielectric can serve a variety of purposes in microelectronics packaging.
9
Li, Xiang, and Yan Jiang. "Design of a Cylindrical Cavity Resonator for Measurements of Electrical Properties of Dielectric Materials." Thesis, Högskolan i Gävle, Avdelningen för elektronik, matematik och naturvetenskap, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-7687.
Full textAbstract:
In microwave communications, the main aspects for affecting the dielectric losses in the materials are relating to the dielectric properties and the radiation frequencies. Normally, the different dielectric materials will lead to the different losses and reflections for microwave frequencies. To evaluate the dielectric properties from the different materials plays an essential role in the microwave engineering. There are many approaches can be used to measure the dielectric materials, e.g. capacitor methods, transmission line methods, cavity resonator methods, open cavity methods and so on. The cavity resonator method is one of the most popular ways for measuring the dielectric materials. In this thesis, some of the techniques will be reviewed, and the TM010 mode cylindrical cavity resonator with perturbation technique will be used for determining the dielectric properties. The design and measurements will be presented in both simulations and practice. With 1.2GHz cavity resonator, in the simulations, the dielectric permittivity for Teflon is measured as 2.09-0.0023i and 2.12-0.0116 in copper cavity and ferromagnetic cavity. Finally the sample is measured as 3.83-0.12i in practice.
10
Tseng, Jung-Kai. "Enhanced Dielectric Properties of Multilayer Capacitor Film via Interfacial Polarization." Case Western Reserve University School of Graduate Studies / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=case1449137228.
Full text
11
Marashdeh, Wajeeh. "Relaxation Behavior and Electrical Properties of Polyimide/Graphene Nanocomposite." University of Cincinnati / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1595850361812632.
Full text
12
Jäverberg, Nadejda. "Electrical Insulating Properties of Poly(Ethylene-co-Butyl Acrylate) Filled with Alumina Nanoparticles." Doctoral thesis, KTH, Elektroteknisk teori och konstruktion, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-116862.
Full textAbstract:
In this work the electrical insulating properties of the nanocomposite materials based on poly(ethylene-co-butyl acrylate) filled with alumina nanoparticles are studied. The dielectric properties chosen for the evaluation are the dielectric permittivity and loss as well as the breakdown strength and the pre-breakdown currents. The reason for choosing these particular properties is partly due to the importance of these for the general electrical applications and partly due to the uncertainties involved for these particular properties of the nanocomposite materials. The importance of moisture absorption for the dielectric properties is outlined in this work. All measurements were performed in both dry conditions and after conditioning of the materials in humid environment until saturation. The data for moisture absorption was taken from the water absorption study performed at the Department of Fibre and Polymer Technology, KTH. The dielectric spectroscopy in frequency domain was employed for measuring dielectric permittivity and loss. Havriliak-Negami approximation was used for characterization of the measurement data and at the same time ensuring the fulfillment of the Kramers-Kronig relations. Results from the dielectric spectroscopy study in dry conditions suggest that dielectric spectroscopy can be used for evaluating nanoparticle dispersion in the host matrix, based on correlation between the morphology data obtained from SEM investigation and the scatter in the dielectric loss. The dielectric spectroscopy study performed on the nanocomposites after conditioning in humid environment showed that absorbed moisture has a distinct impact on the dielectric loss. Especially pronounced is its’ influence on the frequency behavior, when the dielectric loss peaks are shifted towards higher frequencies with increased moisture content. The nanocomposite materials characterized by higher specific surface area generally exhibit higher dielectric losses. Surface functionalization of the nanoparticles does not seem to have much influence on the dielectric loss in dry conditions. After conditioning in humid environment, however, the surface modification was shown to have a significant impact. Temperature is another significant factor for the frequency behavior of the dielectric loss: it was found that the studied nanocomposites can be characterized by Arrhenius activation. The breakdown strength and pre-breakdown currents study outlined the influence of moisture as well. The study indicated that surface treatment of the nanoparticles can enhance properties of the nanocomposite materials, namely aminopropyltriethoxy silane was an especially successful choice: • The highest breakdown strength was determined by the study for NDA6 material formulation in dry conditions. • After conditioning in humid environment the NDA6 material continued showing the best breakdown strength among the nanocomposite mate rials, as well as this value was close to the breakdown strength of the reference unfilled material. This study confirms the existence of the optimal nanofiller content or rather optimal specific surface area of the dispersed nanoparticles in the host matrix. The latter is supported by the comparison between the nanocomposites based on nanoparticles with two different specific surface areas, which shows that the dielectric properties worsen, i.e. the dielectric losses increase and the influence of absorbed moisture on the breakdown strength becomes more pronounced, for nanomaterials with larger specific surface area. The pre-breakdown currents were found to follow space-charge limited conduction mechanism reasonably well. The following conduction regimes were identified: constant region (likely due to measurement difficulties at low field strengths), Ohm’s regime, trap-filled-limit regime and trapfree dielectric regime. The breakdown usually occurred either during the trap-filled-limit regime, when the current increased dramatically for the small change in electric field, or during the trapfree dielectric regime. The threshold values between different conduction regimes seem to correlate well with the oxidation induction times (OIT), which in turn depend on the total specific surface area. The pre-breakdown currents tend to be highest for the materials filled with the untreated nanoparticles. Increased absorbed moisture content causes higher pre-breakdown currents for the nanocomposite materials, while for the reference unfilled material the pre-breakdown currents do not show such tendency. Generally it can be said that the repeatability in the measured data is higher for the nanocomposite materials in comparison to the unfilled host material, as was demonstrated by both dielectric spectroscopy and breakdown studies.QC 20130207
13
Das, Gupta Tapajyoti. "Study of electrical and optical properties of metal dielectric nano-composite near percolation threshold." Palaiseau, Ecole polytechnique, 2015. http://www.theses.fr/2015EPXX0085.
Full text
14
Podpirka, Adrian Alexander. "Studies on Synthesis, Structural and Electrical Properties of Complex Oxide Thin Films: Ba1-xSrxTiO3 and La2-xSrxNiO4." Thesis, Harvard University, 2012. http://dissertations.umi.com/gsas.harvard:10247.
Full textAbstract:
High performance miniaturized passives are of great importance for advanced nanoelectronic packages for several applications including efficient power delivery. Low cost thin film capacitors fabricated directly on package (and/or on-chip) are an attractive approach towards realizing such devices. This thesis aims to explore fundamental frequency dependent dielectric and insulating properties of thin film high-k dielectric constant in the perovskite and perovskite-related complex oxides. Throughout this thesis, we have successfully observed the role of structure, strain and oxygen stoichiometry on the dielectric properties of thin film complex oxides, allowing a greater understanding of processing conditions and polarization mechanisms. In the first section of the thesis, we explore novel processing methods in the conventional ferroelectric, barium strontium titanate, \(Ba_{1-x}Sr_xTiO_3 (BST)\), using ultraviolet enhanced oxidation techniques in order to achieve improvements in the dielectric properties. Using this method, we also explore the growth of BST on inexpensive non-noble metals such as Ni which presents technical challenges due to the ability to oxidize at high temperatures. We observe a significant lowering of the dielectric loss while also lowering the process temperature which allows us to maintain an intimate interface between the dielectric layer and the metal electrode. The second section of this thesis explores the novel dielectric material, Lanthanum Strontium Nickelate, \(La_{2-x}Sr_xNiO_4 (LSNO)\), which exhibits a colossal dielectric response. For the first time, we report on the colossal dielectric properties of polycrystalline and epitaxial thin film LSNO. We observe a significant polarization dependence on the microstructure due to the grain/grain boundary interaction with charged carriers. We next grew epitaxial films on various insulating oxide substrates in order to decouple the grain boundary interaction. Here we observed substrate dependent dielectric properties associated with induced strain. We also observe, due to the p-type carriers in LSNO, pn junction formation when grown epitaxially on the conducting oxide degenerate n-type Nb-doped \(SrTiO_3\). Finally we explore the growth mechanism of epitaxial LSNO as a function of high oxygen content. Due to the ability for LSNO to take in interstitial oxygen, a reoriented growth is observed at a critical thickness, thereby allowing us to vary anisotropy as a function of deposition conditions.Engineering and Applied Sciences
15
Jäverberg, Nadejda. "Dielectric properties of poly(ethyelene-co-butyl acrylate) filled with Alumina nanoparticles." Licentiate thesis, KTH, Elektroteknisk teori och konstruktion, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-31407.
Full textAbstract:
In this work dielectric properties of the poly(ethylene-co-butyl acrylate)filled with alumina nanoparticles are evaluated. These nanocomposite materialswere manufactured at the department of Fibre and Polymer Technology,KTH.This study is limited to the properties of general importance for the AC applications.The dielectric permittivity of the nanocomposite materials wasstudied as a function of filler size, filler content, coating, temperature and airhumidity used for conditioning of the samples. The ultimate goal with thisproject is to describe the influence of material composition, temperature andair humidity on the dielectric properties and model these dependencies.In this thesis the experimental setup for voltage endurance testing of thenanocomposites, namely studying applied voltage frequency dependence ofpartial discharges in electrical trees, with a possibility of following electricaltreeing optically, was developed and described.The dielectric spectroscopy measurements were performed on thoroughly driednanocomposites - so-called dry DS study. It was shown that the experimentaldata can be fitted with Havriliak-Negami approximation, which justifiesthe correctness of the measurement results. It has been shown that addingnanoparticles to the EBA matrix changes the low frequency dispersion significantlyfor the dried samples. It was also indicated that the particle coatingused has very low impact on the resulting permittivity of the thoroughly driedsamples. From the dry DS studies it was suggested that the main cause ofthe scattering in data between the dry samples is most likely the influenceof the material inhomogeneity and possibly the moisture absorption. Thisleads to a possibility of using dielectric spectroscopy as a tool for probing thedispersion of nanoparticles in the polymer matrix.The dielectric spectroscopy measurements were also carried out on the nanocompositesconditioned in the environments with different humidity levels of air inorder to study the influence of absorbed water on the dielectric permittivity- so-called wet DS study. From the wet study it was shown that for the wetsamples the amplitude of the loss peak is defined by the filler size, filler contentand coating used; while its position in frequency domain is determinedby the coating and the humidity level used for conditioning.QC 20110315
16
Altšmíd, Jakub. "Study of Electric and Dielectric Properties of Ionic Liquids." Doctoral thesis, Vysoké učení technické v Brně. Fakulta chemická, 2019. http://www.nusl.cz/ntk/nusl-409088.
Full textAbstract:
Dizertační práce je zaměřena na studium elektrických a dielektrických vlastností iontových kapalin. Iontové kapaliny mohou nacházet uplatnění v široké škále aplikací, především pak v elektrotechnice. Teoretická část se věnuje popisu základních vlastností iontových kapalin a možností jejich uplatnění v kondenzátorech a elektrochemických senzorech plynů. Experimentální část se věnuje použitým metodám charakterizace vlastností iontových kapalin, jsou zde popsány teoretické poznatky o dielektrické spektroskopii včetně metod stanovení fyzikálních vlastností a vyhodnocení experimentálních dat. Experimentální část je rozdělena na dvě základní části. První se věnuje studiu iontových kapalin pro použití jako elektrolytu v kondenzátorech, druhá část se věnuje studiu vlastností připravených experimentálních senzorů na NO2, zejména vlivem vlastností iontových kapalin na sledované parametry senzoru.
17
Tantraviwat, Doldet. "Dielectics on germanium : electrical and interfacial properties." Thesis, Queen's University Belfast, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.558183.
Full textAbstract:
Over the past decades, the continuous reduction in Si02/Si device dimensions has been approaching its technological and fundamental limits. This opens a possibility of novel channel materials and high-x dielectrics to be implemented for future CMOS field-effect transistors (FETs). Germanium has recently gained a lot of research interest due to its high electron and hole mobilities. Therefore, Si02, Ah03, and Hf02 materials are investigated as potential gate dielectrics for future germanium MOSFETs. Atmospheric pressure chemical vapour deposition technique is used to deposit Si02 on germanium, showing good results. The influence of an aluminium gate is experimentally demonstrated and the device performance of Si02/Ge devices is degraded during thermal treatment. The use of tungsten allows Si02/Ge capacitors to receive higher thermal treatment. Minority carrier lifetime is studied through low temperature capacitance-time measurements. Zerbst plots and linear approximation equation are used to determine carrier generation lifetime. Atomic layer deposition of Ah03 and Hf02 materials are also studied. Direct formation of Ah03 on germanium provides reasonable results. However, degradation of device performance is observed after thermal treatment, implying that a good interface layer is needed. In-situ plasma nitridation and thermal oxidation processes are developed to form GeOxNy and Ge02 interface layers, respectively. A high quality interface between germanium and Ge02 is observed, resulting in good electrical properties of capacitors with a Ge02 interface layer. Germanium MOSFETs are fabricated with Si02, Hf02 and Ah03 gate dielectrics with and without an interface layer. High electron (~1400 cm2N's) and hole mobilities (~540 cm2N•s) are experimentally demonstrated on devices with Si02 gate dielectric. However, low hole mobilities are observed on high-x/Ge transistors with and without GeOxNy interface layer, ~80-100 and ~160 cm2N•s, respectively. Consistent with the results observed on MOS capacitors, it is believed that high interface trap density is responsible for degradation of transistor performance.
18
Mackey, Matthew E. "Enhanced Dielectric Properties of Micro and Nanolayered Films for Capacitor Applications." Case Western Reserve University School of Graduate Studies / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=case1332860438.
Full text
19
Peelamedu, Ranganathan Ravip. "Effects of Deposition Temperature and Post Deposition Annealing on the Electrical Properties of Barium Strontium Titanate Thin Film for Embedded Capacitor Applications." Master's thesis, University of Central Florida, 2004. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2951.
Full textAbstract:
A higher degree of system level integration can be achieved by integrating the passive components into semiconductor devices, which seem to be an enabling technology for portable communication and modern electronic devices. Greater functionality, higher performance and increase in reliability can be achieved by miniaturizing and reducing the number of components in integrated circuits. The functional potential of small electronic devices can be enormously increased by implementing the embedded capacitors, resistors and inductors. This would free up surface real estate allowing either a smaller footprint or more silicon devices to be placed on the same sized substrate. This thesis focuses on the effect of deposition temperature and post deposition annealing (PDA) in different gas ambient on the electrical properties of sputter deposited ferroelectric Barium Strontium Titanate (Ba0.5St0.5) TiO3 thin film capacitors. Approximately 2000A of Barium Strontium Titanate (BST) thin film was deposited at different substrate temperatures (400,450,500 and 550[degrees]C) on cleaned silicon substrates. These BST films were then annealed separately in 100% N2, 100% O2 and 10% O2 + 90% N2 at 575[degrees]C in sputtering machine (PVD anneal) and a three zone annealing Lindberg furnace. The objective of this thesis was to compare the effect of PDA on the electrical properties of BST films deposited at different substrate temperatures between PVD annealing and furnace annealing. For this work, tantalum thin film was used as top and bottom electrode to fabricate the capacitors. BST thin film capacitors were fabricated and characterized for leakage current and dielectric breakdown. Roughness study on pre and post annealed BST films were done using optical profilometer. The capacitors were tested using HP impedance analyzer in the frequency range from 10Hz through 1 MHz. From the experiments, 100% O2 annealed furnace annealed BST thin film seem to have better dielectric constant, higher breakdown voltage and nominal capacitance density.M.S.E.E.
Department of Electrical and Computer Engineering
Engineering and Computer Science
Electrical Engineering
20
Sreenivasan, Raghavasimhan. "Metal-gate/high-k dielectric stack engineering by atomic layer deposition : materials issues and electrical properties /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.
Full text
21
Moulart, Alexandre Marc. "High dielectric and conductive composites for electromagnetic crystals." Thesis, Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/17092.
Full text
22
Arshak, K. I. "A study of electron paramagnetic resonance and some optical and electrical properties in thin dielectric oxide films." Thesis, Brunel University, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.356687.
Full text
23
Kim, Sunho Ph D. Massachusetts Institute of Technology. "Defect and electrical properties of high-K̳ dielectric Gd₂O₃ for magneto-ionic and memristive memory devices." Thesis, Massachusetts Institute of Technology, 2020. https://hdl.handle.net/1721.1/129007.
Full textAbstract:
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2020Cataloged from student-submitted PDF of thesis. The "K̳̳" in title on title page appeared as subscript "K."
Includes bibliographical references (pages 127-134).
While high-[subscript K] dielectrics utilized in CMOS technology are noted for their highly insulating characteristics, they have demonstrated surprising electrolytic behavior as key components in a variety of thin film memory devices, including those based on magneto-ionic and memristive behavior. In this work, we focus on the rare earth sesquioxide, Gd₂O₃, a well-known high-κ dielectric that has exhibited a variety of electrolytic properties during the development and operation of the first magneto-ionic devices developed at MIT. Specifically, we focused our investigation on the defect chemistry and electrical properties of Gd₂O₃ in order to better understand the relationship between the structure, chemistry, processing conditions, and operating environment and the material's low-temperature ionic and electronic transport properties and the means for their optimization vis-à-vis memory device operation.
Phase (monoclinic and cubic) and dopant controlled (Ca, Ce, Sr, Zr) polycrystalline pellets of 8 different Gd₂O₃ systems were prepared to investigate various defect regimes in consideration of this material's polymorphism. We considered intrinsic anion-Frenkel disorder and electronic disorder, equilibration with the gas phase, water incorporation, and dopant incorporation in the defect modeling, taking into account the roles of crystallographic structure as well as oxygen ion defect and protonic generation. The primary method utilized to characterize the defect chemistry and transport properties of Gd₂O₃ was the analysis of the dopant, p0₂ and temperature dependencies of the electrical conductivity extracted from complex impedance spectra obtained over the p0₂ range of 1 to 10⁻¹⁵ atm, for 5 isotherms between 700 and 900 °C with 50 °C steps and for a range of acceptor and donor dopants.
Based on the p0₂ dependency of conductivities, in light of the defect modeling, the majority point defects in each system were identified. Electronic and ionic migration energies and thermodynamic parameters were extracted via the defect modeling and temperature dependencies of conductivities. In nearly all cases, the predominant charge carrier under oxidizing conditions at elevated temperatures was identified as the p-type electron-hole, largely due to oxygen excess non-stoichiometry in these systems. With decreasing p0₂, transport tended to switch from semiconducting towards ionic. Depending on phase, dopant type & concentration, temperature, and relative humidity, the predominant ionic conductivity was found to be via oxygen interstitials, oxygen vacancies, and/or protons, the latter given by the propensity of Gd₂O₃ to take up water in solid solution from the environment by the formation of OH[superscript .]species.
Unexpectedly, the ionic mobilities of defects in the denser and less symmetric monoclinic system exhibited higher ionic mobilities than the more open bixbyite structure. The hole electronic species in the investigated systems were found to migrate via the small polaron hopping mechanism with rather large hopping energies. This resulted in an inversion of hole and proton mobility magnitudes at reduced temperatures in the monoclinic system. Extrapolation of ionic and electronic defect conductivities to near room temperature, based on our derived defect and transport models, was not able to explain, on its own, the observed electrolytic properties of the Gd₂O₃ thin films utilized in magneto-ionic devices.
In an attempt to connect the transport properties obtained under equilibrium conditions at elevated temperatures with the behavior of Gd₂O₃ near room temperature, selected thin films Gd₂O₃, prepared by pulsed laser deposition or sputtering, were investigated by complex impedance spectroscopy over the temperature range of 20 - 170°C. While films prepared under dry conditions were indeed found to be highly electrically insulating, films exposed to water vapor exhibited dramatically higher proton conductivities (more than ~10⁸ x) than values extrapolated from high temperature. Parallel thermogravimetric analysis on Gd₂O₃ powder specimens, as a function of temperature, under high humidity conditions, demonstrated a correlation between uptake/loss of incorporated water and conductivity upon cooling and heating, respectively.
We can therefore conclude that the large disconnect between the electrical and electrolytic properties observed between high-κ dielectrics used in CMOS devices such as Gd₂O₃, and their much more highly conductive counterparts used in thin film memory devices, depends strategically on the thin film processing conditions. High-κ dielectrics are fabricated in carefully controlled environments with low relative humidity, while research on, for example, Gd₂O₃ - based magneto-ionic memory devices, is performed under ambient laboratory conditions, where significant water uptake becomes possible at surfaces and grain boundaries. The results and insights obtained in this study can be expected to be applied in achieving further progress in the understanding and optimization of magneto-ionic, memristive, and other devices that rely on proton gating.
by Sunho Kim.
Ph. D.
Ph.D. Massachusetts Institute of Technology, Department of Materials Science and Engineering
24
Kulkarni, Sudhir R. "A study of structure, electrical properties and electrical degradation of undoped and nickel doped barium titanate. /." Full text open access at:, 1986. http://content.ohsu.edu/u?/etd,105.
Full text
25
Leach, Jacob H. "Tuning of electrical properties in InAlN/GaN HFETs and Ba0.5Sr0.5TiO3/YIG Phase Shifters." VCU Scholars Compass, 2010. http://scholarscompass.vcu.edu/etd/2035.
Full textAbstract:
Engineers know well from an early point in their training the trials and tribulations of having to make design tradeoffs in order to optimize one performance parameter for another. Discovering tradeoff conditions that result in the elimination of a loss associated with the enhancement of some other parameter (an improvement over a typical tradeoff), therefore, ushers in a new paradigm of design in which the constraints which are typical of the task at hand are alleviated. We call such a design paradigm “tuning” as opposed to “trading off”, and this is the central theme of this work. We investigate two types of microwave electronic devices, namely GaN-based heterostructure field effect transistors (HFETs) and tunable ferroelectric-ferrite-based microwave phase shifters. The “tuning” associated with these types of devices arises from the notion of an optimal 2DEG density, capable of achieving higher performance in terms of electron velocity and enhanced reliability in the case of the HFET, and the coupling of ferroelectric and ferrite materials in tunable microwave phase shifters, capable of achieving high differential phase shifts while at the same time mitigating the losses associated with impedance mismatching which typically arise when the phase is tuned. Promises and problems associated with HFET devices based on the intriguing InAlN/GaN material system will be described. We focus on the fundamental problem associated with the induction of the large density of carriers at the interface, namely the disintegration of an excess of longitudinal optical phonons (hot phonons) in the channel. We use microwave measurements in conjunction with stress tests to evidence the existence of an optimal 2DEG density wherein the hot phonon effect can be “tuned,” which allows for enhanced high frequency performance as well as device reliability. Next, we focus on the design, fabrication, and measurement of tunable phase shifters consisting of thin films of BaxSr1-xTiO3 (BST), which has the advantage of having high dielectric tunability as well as relatively low microwave loss. We discuss the design, fabrication, and measurement of a simple coplanar waveguide (CPW) type of phase shifter as well as a more complicated “hybrid” phase shifter consisting of a ferrite (YIG) in addition to BST. The use of such a bilayer allows one to “tune” the impedance of the phase shifters independently of the phase velocity through careful selection of the DC biasing magnetic fields, or alternatively through the use of an additional piezoelectric layer, bonded to YIG whose permeability can then be tuned through magnetostriction.
26
Perkins, Charles Michael. "Materials and electrical properties of ALD ZrO₂ gate dielectrics /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.
Full text
27
Dutta, Saikat Swapan. "Water absorption and dielectric properties of Epoxy insulation." Thesis, Norwegian University of Science and Technology, Department of Electrical Power Engineering, 2008. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-9723.
Full textAbstract:
Characterization of Epoxy (diglycidyl ether of Bis-phenol A cured with Tri ethylene Tetra amine) without fillers was done. The Water absorption test at 95°C shows that at saturation the epoxy contains a water concentration of 2.089%. The diffusion coefficient of absorption is calculated as 0.021 cm2/s. The diffusion coefficient of desorption is calculated as 0.0987 cm2/s. The diffusion is almost 5 times faster than absorption. Also the material looses weight as the hydrothermal aging progresses. The water in the sample leads to chain scission which leads to the weight loss. The weight loss is more incase of absorption followed by desorption than only absorption. The chain scission leads to decrease in the mechanical strength by around 45%. The diffusion of water from the samples doesnt affect the mechanical strength of the materials. The glass transition temperature reduces by 20°C with water inside the sample. The diffusion of water out of the sample only increases by around 10°C. The Dielectric response of the material shows that after the water absorption the sample shows high losses at lower frequencies. Also the increase in the real part of the permittivity increases with low frequency. The rapid increase in the real art of the permittivity of the material at lower frequencies can be attributed to a polarization at the electrode due both to accumulation of the charge carriers and to chain migrations. The breakdown test of the samples shows that with water in the sample the breakdown strength of the material decreases by 10 KV, but the material regains its dielectric strength when the water is diffused out. This shows that the chain scission and weight loss of the samples has no or minimum effect on the dielectric strength of the sample
28
Hinedi, Mohamad Fahd 1964. "HIGH FREQUENCY DIELECTRIC PROPERTIES OF POLYIMIDES FOR MULTILAYER INTERCONNECT STRUCTURES." Thesis, The University of Arizona, 1987. http://hdl.handle.net/10150/276497.
Full textAbstract:
One of the most important electrical requirements in high performance electronic systems or high speed integrated circuits, is to process larger numbers of electrical signals at much higher speeds. Signal propagation delay must be minimized in order to maximize signal velocities. Therefore, material with low dielectric constant and low dissipation factor is being sought. In this thesis research measurements of dielectric constant and dissipation factor were performed on commercially available polyimides that are used in multilayer interconnect structures. Capacitor structures with a polyimide dielectric were measured up to a 1GHz frequency and 220°C temperature. Polyimides were concluded to be compatible for use in high performance systems such as multilayer interconnect structures.
29
Duong, Danny. "The complex dielectric properties of aqueous ammonia from 2 GHz - 8.5 GHz in support of the NASA Juno mission." Thesis, Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/42891.
Full textAbstract:
A new model for the complex dielectric constant, ε, of aqueous ammonia (NH4OH) has been developed based on laboratory measurements in the frequency range between 2-8.5 GHz for ammonia concentrations of 0-8.5 %NH3/volume and temperatures between 277-297 K. The new model has been validated for temperatures up to 313 K, but may be consistently extrapolated up to 475 K and ammonia concentrations up to 20 %NH3/volume. The model fits 60.26 % of all laboratory measurements within 2σ uncertainty. The new model is identical to the Meissner and Wentz (2004) model of the complex dielectric constant of pure water, but it contains a correction for dissolved ammonia. A description of the experimental setups, uncertainties associated with the laboratory measurements, the model fitting process, the new model, and its application to approximating jovian cloud opacity for NASA's Juno mission to Jupiter are provided.
30
Kuo, Fang-Ling. "Electrical and Structure Properties of High-κ Barium Tantalite and Aluminum Oxide Interface with Zinc Oxide for Applications in Transparent Thin Film Transistors." Thesis, University of North Texas, 2011. https://digital.library.unt.edu/ark:/67531/metadc84233/.
Full textAbstract:
ZnO has generated interest for flexible electronics/optoelectronic applications including transparent thin film transistors (TFTs). For this application, low temperature processes that simultaneously yield good electrical conductivity and optical transparency and that are compatible with flexible substrates such as plastic, are of paramount significance. Further, gate oxides are a critical component of TFTs, and must exhibit low leakage currents and self-healing breakdown in order to ensure optimal TFTs switching performance and reliability. Thus, the objective of this work was twofold: (1) develop an understanding of the processing-structure-property relationships of ZnO and high-κ BaTa2O6 and Al2O3 (2) understand the electronic defect structure of BaTa2O6 /ZnO and Al2O3/ZnO interfaces and develop insight to how such interfaces may impact the switching characteristics (speed and switching power) of TFTs featuring these materials. Of the ZnO films grown by atomic layer deposition (ALD), pulsed laser deposition (PLD) and magnetron sputtering at 100-200 °C, the latter method exhibited the best combination of n-type electrical conductivity and optical transparency. These determinations were made using a combination of photoluminescence, photoluminescence excitation, absorption edge and Hall measurements. Metal-insulator-semiconductor devices were then fabricated with sputtered ZnO and high-κ BaTa2O6 and Al2O3 and the interfaces of high-κ BaTa2O6 and Al2O3 with ZnO were analyzed using frequency dependent C-V and G-V measurements. The insulator films were deposited at room temperature by magnetron sputtering using optimized processing conditions. Although the Al2O3 films exhibited a lower breakdown strength and catastrophic breakdown behavior compared to BaTa2O6/ZnO interface, the Al2O3/ZnO interface was characterized by more than an order of magnitude smaller density of interface traps and interface trapped charge. The BaTa2O6 films in addition were characterized by a significantly higher concentration of fixed oxide charge. The transition from accumulation to inversion in the Al2O3 MIS structure was considerably sharper, and occurred at less than one tenth of the voltage required for the same transition in the BaTa2O6 case. The frequency dispersion effects were also noticeably more severe in the BaTa2O6 structures. XPS results suggest that acceptor-like structural defects associated with oxygen vacancies in the non-stoichiometric BaTa2O6 films are responsible for the extensive electrical trapping and poor high frequency response. The Al2O3 films were essentially stoichiometric. The results indicate that amorphous Al2O3 is better suited than BaTa2O6 as a gate oxide for transparent thin film transistor applications where low temperature processing is a prerequisite, assuming of course that the operation voltage of such devices is lower than the breakdown voltage. Also, the operation power for the devices with amorphous Al2O3 is lower than the case for devices with BaTa2O6 due to the smaller fixed oxide charges and interface trap density.
31
Scovell, Dawn Laura. "Dielectric properties and ionization of water in high interfacial electric fields /." Thesis, Connect to this title online; UW restricted, 1999. http://hdl.handle.net/1773/9877.
Full text
32
Kanbur, Yasin. "Conductive Polymer Nanocomposites Of Polypropylene And Organic Field Effect Transistors With Polyethylene Gate Dielectric." Phd thesis, METU, 2011. http://etd.lib.metu.edu.tr/upload/12613312/index.pdf.
Full textAbstract:
One of the aim of this study is to prepare conductive polymer nanocomposites of polypropylene to obtain better mechanical and electrical properties. Composite materials based on conductive fillers dispersed within insulating thermoplastic matrices have wide range of application. For this purpose, conductive polymer nanocomposites of polypropylene with nano dimentional conductive fillers like carbon black, carbon nanotube and fullerene were prepared. Their mechanical, electrical and thermal properties were investigated.
Polypropylene (PP)/carbon black (CB) composites at different compositions were prepared via melt blending of PP with CB. The effect of CB content on mechanical and electrical properties was studied. Test samples were prepared by injection molding and compression molding techniques. Also, the effect of processing type on mechanical and electrical properties was investigated. Composites become semiconductive with the addition of 2 wt% CB.
Polypropylene (PP) / Carbon Nanotube (CNT) and Polypropylene / Fullerene composites were prepared by melt mixing. CNT&rsquos and fullerenes were surface functionalized with HNO3 : H2SO4 before composite preparation. The CNT and fullerene content in the composites were varied as 0.5, 1.0, 2.0 and 3.0 % by weight. For the composites which contain surface modified CNT and fullerene four different compatibilizers were used. These were selected as TritonX-100, Poly(ethylene-block-polyethylene glycol), Maleic anhydride grafted Polypropylene and Cetramium Bromide. The effect of surface functionalization and different compatibilizer on mechanical, thermal and electrical properties were investigated. Best value of these properties were observed for the composites which were prepared with maleic anhydride grafted polypropylene and cetramium bromide. Another aim of this study is to built and characterize transistors which have polyethylene as dielectric layers. While doing this, polyethylene layer was deposited on gate electrode using vacuum evaporation system. Fullerene , Pentacene ve Indigo were used as semiconductor layer. Transistors work with low voltage and high on/off ratio were built with Aluminum oxide - PE and PE dielectrics.
33
Groenewald, Nico Albert. "Measuring the dielectric properties of crushed copper ore." Thesis, Stellenbosch : University of Stellenbosch, 2010. http://hdl.handle.net/10019.1/5230.
Full textAbstract:
Thesis (MScEng (Process Engineering))--University of Stellenbosch, 2010.ENGLISH ABSTRACT: Previous work has shown that microwave heating of mineral ores induces micro cracks within the ore structure, which can be attributed to the difference in the adsorption of microwaves amongst the different mineral phases. This reduces the energy required during subsequent grinding and enhances the liberation of valuable minerals. In order to design microwave applicators for this purpose, knowledge of the effective dielectric properties of the crushed ore is required. Of particular interest is the effective complex permittivity of the bulk crushed ore. The measurement of the effective permittivity of a large volume of crushed ore is most readily accomplished using the waveguide measurement technique. In this method a representative sample of the material is placed in a defined and fixed volume in a standard size rectangular section metallic waveguide. The magnitude and phase angle of the transmitted and reflected low power microwaves through and from the sample are measured. The complex permittivity can be extracted from these so-called scattering, or Sij parameters. In this study the effective complex permittivities for two porphyry copper ores and a copper carbonatite ore were determined as a function of particle size distribution (-26.5+2mm) using two sizes of waveguide (WR284 and WR340). The sample holders incorporate dielectric windows for the location of the material under test. The extraction of dielectric properties from Sij parameter measurements is problematic using standard algorithms in such cases. Accordingly a new Database Extraction (DBE) Algorithm has been developed. In this method, a database of scattering parameters is established through electromagnetic modelling of the measurement system. A search algorithm is used to determine the effective complex permittivity of the modelled load whose scattering parameters provide the best fit to the experimental data. The goodness of the experimental fit of the simulated to the measured Sij parameters is determined by a root mean squared deviation minimisation metric. Results show that the method can be used successfully to determine an effective complex permittivity for a bulk volume of the crushed material. It is concluded that the dielectric property extraction over the full operational frequency interval (2.3-3 GHz) is preferred as it has a larger degree of extraction confidence and hence reliability. Results show that with increasing particle size, the experimental fit between the simulated and measured Sij parameters becomes increasingly poor, as wall effect become more prominent. The effect is most prominent for the smaller WR284 waveguide size. It is shown that for a waveguide size of similar size to the particle size, the Sij parameter fitting is poorer compared to when a larger waveguide size is used. The extracted complex permittivity reproducibility between repeated dielectric property measurements is improved for the WR340 waveguide size, as the extractions in the WR284 waveguide is dominated by the combined particle size and wall-effects of the sample holder. Ore mineralogy is identified as a key parameter that influences the dielectric properties of the crushed ore. For ores with a dominant microwave absorbent mineral phase, the dielectric constant and loss factor is found to be larger, compared with ores with a more dominant microwave transparent gangue mineral phase.
AFRIKAANSE OPSOMMING: Navorsing toon dat die verhitting van mineraal erts, met mikrogolwe, mikroskaal frakture in die mineraalstruktuur teweeg bring weens die verskil in die adsorpsie van mikrogolwe in die verskillende mineraalfases. Gevolglik verminder die energievereiste vir die vergruising van die erts en verbeter die vrystelling van waardevolle minerale wat vasgevang is in die mineraalmatriks. Vir die ontwerp van mikrogolfapplikators vir dié doel, word die effektiewe diëlektriese eienskappe van die vergruisde erts benodig. Van spesifieke belang is die effektiewe komplekse permittiwiteit van die erts. Die effektiewe permittiwiteit van `n vergruisde materiaal monster word met behulp van die golfgeleier tegniek gemeet. Vir dié tegniek word `n verteenwoordigende monster van die materiaal in `n rigiede volume in `n standaard grootte reghoekige golfgeleier geplaas. Die grootte en fasehoek komponente van die deurgelate en weerkaatste mikrogolwe deur en van die oppervlak van die materiaal word gemeet. Die komplekse permittiwiteit van die vergruisde materiaal kan geëkstrakteer word vanaf hierdie sogenaamde verspreide, of Sij parameters. In hierdie studie word die effektiewe permitiwiteit van twee porforie koper ertse en `n koper karbonatiet erts bepaal as funksie van partikel grootte (-26.5+2 mm) deur gebruik te maak van twee standaard grootte golfgeleiers. Die monster houers inkorporeer diëlektriese vensters om die vergruisde materiaal monster in posisie te hou. In so `n geval is die ekstraksie van die diëlektriese eienskappe vanuit die Sij parameter metings problematies. Gevolglik is ‘n nuwe Databasis Ekstraksie Algoritme ontwikkel wat `n databasis van verspreide parameters opstel deur die elektromagnetiese simulasie van die metingsisteem. `n Soek-algoritme word gebruik om die effektiewe komplekse permitiwiteit van die gesimuleerde monster te bepaal wat die beste ooreenstem met dié van die gemete eksperimentele Sij parameter data. Die mate van ooreenstemming tussen die parameters, word bepaal aan die hand van die minimaliserings prosedure. Resultate toon dat dié metode geskik is vir die bepaling van die effektiewe komplekse permitiwiteit van die vergruisde monster. Dit word vasgestel dat die betroubaarheid van die geëkstraeerde Sij parameters, en gevolglik die diëlektriese eienskappe van die erts, toeneem indien die algoritme oor `n groter frekwensie band uitgevoer word. Resultate toon verder dat met toenemende partikel grootte, die mate waartoe die absolute grootte en fasehoek komponente van die gesimuleerde en gemete Sij parameters ooreenstem, versleg. Dit word toegeskryf aan wand-effekte. Hierdie verskynsel is veral opmerklik vir die kleiner grootte golfgeleier. Dit word getoon dat vir metings waar die golfgeleier dieselfde orde grootte geometriese afmetings het as die vergruisde erts self, die passing tussen die gesimuleerde en gemete Sij parameters swakker is, wanneer dit vergelyk word met metings waar dit nie die geval is nie. Die reproduseerbaarheid van die geëkstraeerde diëlektriese eienskap waardes verbeter vir lesings wat uitgevoer word in `n groter grootte golfgeleier. Laasgenoemde word toegeskryf aan die meer dominante wand-effekte wat kenmerklik is vir `n kleiner golfgeleier. Erts mineralogie word geïdentifiseer as `n sleutel parameter wat die diëlektriese eienskappe van die vergruisde materiaal beïnvloed. Beide die diëlektriese konstante en verliesfaktor is groter vir ertse met `n oorheersende mikrogolf absorberende mineraalfase.
34
Simpson, Joycelyn Ovetta. "Structure-dielectric property relationships for epoxy systems : a free volume analysis." Thesis, Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/10102.
Full text
35
Saarenketo, T. (Timo). "Electrical properties of road materials and subgrade soils and the use of Ground Penetrating Radar in traffic infrastructure surveys." Doctoral thesis, University of Oulu, 2006. http://urn.fi/urn:isbn:9514282221.
Full textAbstract:
Abstract
This PhD thesis is composed of a synopsis and five published papers that are focused on both the research results of studies on electrical properties of road materials and subgrade soils and their seasonal changes and the use of Ground Penetrating Radar technique in traffic infrastructure surveys. The data for this survey was collected mainly in Finland, Texas, Scotland and Sweden and thus presents many kinds of road materials, subgrade soils and climate conditions.
The synopsis of this work begins with a presentation of the theory and basic principles of GPR techniques. Special attention is given to the dielectric properties and seasonal changes of unbound road materials and subgrade soils. The synopsis also presents different kinds of GPR hardware systems as well as recommendations and experiences from different data collection, processing and interpretation techniques. Special attention is given to a method whereby GPR data is integrated with other road survey data and then analysed using a number of structural diagnostic methods. Finally, the synopsis provides an overview of of the various GPR applications on roads and streets, bridges, railways and airports.
The laboratory test results presented in this work show that the relationship between dielectric value and increasing water content is not linear or exponential but more likely a series of logarithmic functions. Laboratory results also showed that dielectric dispersion, which can be related to poorly performing subgrade soils and road aggregates, takes place mainly in loosely bound adsorption water and capillary water layer. As such these moisture sensitive problem materials can also be identified during the dry summer seasons when they are stiff. Dielectric value and electrical conductivity can also be related to other technical properties of road materials and subgrade soils such as frost susceptibility, shear strength, plastic limit, compaction degree and voids content. Laboratory tests and field data collected using the Percostation technique also demonstrate that a knowledge of seasonal changes and thermodynamics is very important in understanding and modelling the mechanical behaviour of road structures. Finally, laboratory and field tests indicate that colloids have an important role in the failure mechanism of the road materials.
This research demonstrates that the GPR technique not only gives valuable structural information on the different types of structures and subgrade soils but it provides a wide range of information of the electrical properties of the materials under survey which can be further related to their mechanical performance. The best information will be gained if GPR data is analysed together with other non destructive testing data collected form the roads, railways and airports.
36
Humbert, William R. "A new technique for measuring the elctromagnetic properties of rotationally symmetric materials." Diss., Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/14941.
Full text
37
Liu, Yanhan. "mm Wave Near Field Spot Focus Technique in Free Space Dielectric Properties Evaluation Method." Thesis, KTH, Skolan för elektroteknik och datavetenskap (EECS), 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-298023.
Full textAbstract:
Radomes were invented to protect sensitive antenna systems from the disturbing environment. Estimation of their permittivity is a vital step for their design. This project studies the free- space method to measure the permittivity of radome materials. The free space method has the advantages of non-contacting and free-of-reshaping, which are suitable for sheet-shape samples. In this method, the sample is placed between two antennas, and the permitivity of the material is determined based on the S-parameters between the two antennas. To avoid the influence of energy diffraction at the edges of samples, a near field focus(NFF) antenna is used. NFF antennas have their focal point in the near field. Consequently, the energy diffraction at the edges is reduced if the sample is placed at the focal point of the NFF antenna. The measurement results are processed with the genetic algorithm. This method starts from a group of assumption values of permittivity. An optimal value is obtained after multiple iterations. Compared with the results from a cavity resonant method provided in the datasheet of the materials, the free space setup in this thesis measurement provides an average 2.80% error in permittivity, and an average 34.14% error in loss tangent. Therefore, the genetic algorithm is suitable for this free space setup. The error of this thesis measurement is affected by several factors, such as thickness value error and inaccurate operation.Radom används för att skydda känsliga antennsystem från omgivningen. Det är viktigt att estimera permittiviteten av radom innan de designas. Med korrekt permittivitet kan radomets inverkan på systemet räknas ut. I det här projektet används en fri-rymdsmetod för att mäta permittivitet. Fri-rymdsmetoden har fördelarna av att vara kontaktfri och icke-invasiv, vilket gör den lämplig för permittivitetmätning av materialskivor. Med den här metoden placeras en materialskiva mellan två antenner. Permittiviteten kan beräknas från S-parametrarna mellan antennerna. För att undvika diffraktion från kanten av materialskivan används närfältsfokuserade (NFF) antenner i fri-rymdsmetoden. NFF antenner har en fokalpunkt i närfältet. Kantdiffraktionen minskas om materialskivan placeras i fokalpunkten av NFF antennen. Mätningarna efterbehandlas med en genetisk algoritm (GA). Denna metod gissar värden på permittiviteten. Ett optimalt värde räknas fram iterativt. Jämfört med specificerad permittivitet från tillverkaren skiljer sig fri-rymdsmätningarna i denna avhandling i medeltal 2.8% i realdelen för den relativa permittiviteten och 34.14% i förlusttangent. Felet i mätningen påverkas av flera faktorer, som fel i mätningen av materialskivans tjocklek och fel i mätuppställningen.
38
Baeraky, Thoria A. "High temperature measurements of the microwave dielectric properties of ceramics." Thesis, University of Nottingham, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.323185.
Full text
39
Okatan, Mahmut Baris. "Microstructure Development In Nickel Zinc Ferrites." Master's thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/3/12606924/index.pdf.
Full textAbstract:
Nickel zinc ferrites (NZF) have been considered as one of the basic components in high frequency electromagnetic applications especially in the field of telecommunications. In the present study, the aim was to produce high quality nickel zinc ferrite ceramics at low soaking temperatures. For this purpose, conventional ceramic manufacturing method based on mixed oxide precursors was followed using calcium fluoride, CaF2, as sintering additive.
During the sintering studies, it was noticed that both the microstructure and the electromagnetic properties of the NZF ceramics were modified to a great extent by CaF2. Therefore, material characterization studies involving microstructural, dielectric and magnetic properties were conducted with respect to CaF2 content of ceramics and soak duration.
The results showed that due to the presence of CaF2 in ceramics, significant improvements were achieved not only in kinetics of sintering but also in the parametersDC electrical resistivity, dielectric constant and dielectric loss factor. For example, 1.0 wt% CaF2 added NZF ceramic produced in this study had a DC electrical resistivity of 1011 &
#61527
-cm which was 100,000 times bigger than the one attained in pure NZF ceramic. On the other hand, the dielectric constant exhibited a flat behavior up to 40 MHz with a value around 16. In addition, no resonance peak was observed in dielectric loss factor spectra, and the typical values of dielectric loss factor lied below 0.01. Besides the achievements mentioned, the magnetic properties such as relative magnetic loss factor and hysteresis parameters were also improved.
40
Salimi, Elham. "Dielectrophoresis study of electroporation effects on dielectric properties of biological cells." American Institute of Physics, 2016. http://hdl.handle.net/1993/31945.
Full textAbstract:
Electroporation affects the dielectric properties of cells. Dielectric measurement techniques can provide a label-free and non-invasive modality to study this phenomenon. In this thesis we introduce a dielectrophoresis (DEP) based technique to study changes in the cytoplasm conductivity of single Chinese hamster ovary (CHO) cells immediately after electroporation. Using a microfluidic chip, we study changes in the DEP response of single CHO cells a few seconds after electroporation. First, in order to quantify our DEP measurement results and relate them to the cells internal conductivity, we introduce a dielectric model for CHO cells. This is achieved by measuring the DEP response of many individual cells in the β-dispersion frequency region and curve fitting to the measured data. Second, we present quantitative results for changes in the cytoplasm conductivity of single cells subjected to pulsed electric fields with various intensities. We observe that when electroporation is performed in media with lower ionic concentration than cells cytoplasm, their internal conductivity decreases after electroporation depending on the intensity of applied pulses. We also observe that with reversible electroporation there is a limit on the decrease in the cells’ internal conductivity. We hypothesize the reason is the presence of large and relatively immobile negative ions inside the cell which attract mobile positive ions (mainly sodium and potassium) to maintain cell electrical neutrality. We monitor the temporal response of cells after electroporation to measure the time constant of changes due to ion transport and observe this ranges from seconds to tens of seconds depending on the applied pulse intensity. This result can be used to infer information about the density and resealing time of very small pores (not measurable with conventional marker molecules). Lastly, we measure the electroporation of cells in media with different conductivities. Our results show that electroporation in very low conductivity media requires stronger pulses to achieve a similar poration extent as in high conductivity media. The outcome of this thesis can be used to improve our understanding of the dynamics of electroporation as well as its modelling in order to make more accurate predictions or optimize the process for specific applications.February 2017
41
Hegde, Vikas. "Etudes diélectriques des matériaux biodégradables et/ou bio-sourcés." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAT031/document.
Full textAbstract:
L'utilisation extensive des combustibles fossiles, l'émission de gaz à effet de serre dans l'atmosphère et les difficultés de recyclage des résidus de consommation incitent au recours accru aux polymères biodégradables. Dans le domaine du génie électrique, de nombreux polymères trouvent des applications dans les systèmes d'isolation des matériels électriques. Ces polymères sont issus du pétrole, peu respectueux de l'environnement et la plupart d'entre eux ne sont pas biodégradables. Dans le but de les remplacer, des polymères biodégradables ont été explorés.Une revue des travaux de recherche sur les polymères biodégradables dans le domaine du génie électrique a été réalisée. Les propriétés thermiques et électriques de polymères biodégradables et conventionnels sont rapportées et comparées.Les polymères biodégradables et / ou biosourcés sélectionnés et mis en œuvre sont le Poly(3-hydroxybutyrate-co-3-hydroxyvalerate) (PHBV), le polycaprolactone (PCL) et l’acide polylactique PLA. Un matériau nanocomposite basé sur PLA a également été préparé. Les propriétés diélectriques pour une large gamme de température et de fréquence ont été mesurées par spectroscopie diélectrique et analysées en s’appuyant sur les propriétés thermiques obtenues par DSC et DMA. La résistivité volumique et la tenue diélectrique ont pu également être mesurées. Ces polyesters biodégradables sont comparés aux polymères conventionnelsThe declining resources of fossil fuels, increase in wide-spread pollution, emission of green-house gases and difficulties in recycling waste materials are pushing biodegradable polymers into prominence. In the domain of electrical engineering, many polymers find applications in various electrical insulation systems. These polymers are petro-based, not eco-friendly and most of them are not biodegradable. With an objective to replace conventional products, biodegradable polymers are explored for their dielectric properties.In this work, a detailed study on the present status in the research work on biodegradable polymers in the electrical engineering domain is presented. Thermal and electrical properties of both biodegradable and classical polymers are compiled and compared.The polymers processed and studied were Poly(3-hydroxybutyrate-co-3-hydroxyvalerate) (PHBV), Polycaprolactone (PCL), Poly(lactic acid) (PLA) and PLA based nanocomposite. Dielectric properties for a wide range of temperature and frequency were measured by dielectric spectroscopy and analyzed with the help of DSC and DMA experiments. Volume resistivity and electrical breakdown were measured on few polymers. These biodegradable polyesters were compared with conventional polymers
42
Akram, Shakeel. "High temperature and high electrical resistance multilayer polyimide nanodielectrics for electric motors insulation." Thesis, Montpellier, 2020. http://www.theses.fr/2020MONTS028.
Full textAbstract:
Dans cette thèse, les films multicouches PI / nanocomposites ont été préparés selon un processus de synthèse optimisé. Les échantillons synthétisés ont été caractérisés expérimentalement et par simulations. Tout d'abord, le mécanisme de dégradation des échantillons a été exploré à l'aide d’un générateur d’impulsions. La constante diélectrique, les pertes diélectriques, la rigidité diélectrique, le courant de conduction, la charge d'espace et le courant thermo-stimulé (CTS), ont été étudiées. Ensuite, les niveaux de piège ont été calculés à l'aide des données de déclin de la charge totale et de CTS. Enfin, des modèles 3D de multicouches PI / nanocomposites basés sur les conditions aux limites obtenues à partir d'images SEM / TEM ont été construits dans COMSOL Multiphysics. Ces modèles décrivent l'impact de la dispersion des nanoparticules sur l'amplification du champ électrique. Nos résultats démontrent moins d’agglomération de nanoparticules dans les multicouches et une diminution des charges d’espace et du champ électrique interne. Ainsi, l’utilisation d’isolations multicouches devraient permettre une meilleure fiabilité des moteurs électriquesIn this thesis, the multilayer PI/nanocomposite films were prepared using an optimized synthesis process. The synthesized samples are characterized by experiments and simulations. First, the samples degradation mechanism was explored using pulse power source. Second, dielectric constant, dielectric loss, insulation lifetime, dielectric strength, conduction current, space charge and thermal stimulated current (TSC) were investigated. Third, trap levels were calculated using total charge decay data and TSC data. In the end, multilayer PI/nanocomposite 3D models based on actual boundary conditions obtained from SEM/TEM images of synthesized samples were constructed in COMSOL Multiphysics software. The impact of nanoparticle dispersion on the electric field enhancement is explicitly described in this model. Our results demonstrate that the chances of nanoparticles agglomeration are reduced by using multilayer structure. In consequence, less space charge and low electrical fields are observed in multilayer films. Using multilayer insulations would ensure reliable operation for electric motors and increase its lifetime
43
Dobbie, Andrew. "Investigation of the electrical properties of Si₁-xGex channel pMOSFETs with high-κ dielectrics." Thesis, University of Warwick, 2007. http://wrap.warwick.ac.uk/2561/.
Full textAbstract:
It is now apparent that the continued performance enhancements of silicon metal-oxide-semiconductor field effect transistors (MOSFETs) can no longer be met by scaling alone. High-mobility channel materials such as strained Si1-xGex and Ge are now being seriously considered to maintain the performance requirements specified by the semiconductor industry. In addition, alternative gate dielectric, or high-? dielectrics, will also be required to meet gate leakage requirements. This work investigates the properties of using strained Si1-xGex or Ge as alternative channel materials for pMOSFETs incorporating hafnium oxide (HfO2) high-? gate dielectric. Whilst the SiGe pMOSFETs (x = 0.25) exhibited an enhancement in hole mobility (300 K) over comparable silicon control pMOSFETs with sputtered HfO2 dielectric, high Coulomb scattering and surface roughness scattering relating to the dielectric deposition process meant that the effective hole mobilities were degraded with respect to the silicon universal curve. Germanium channel pMOSFETs with halo-doping and HfO2 gate dielectric deposited by atomic layer deposition showed high hole mobilities of 230 cm2V-1s-1 and 480 cm2V-1s-1 at room temperature and 77 K, respectively. Analysis of the off-state current for the Ge pMOSFETs over a range of temperatures indicated that band-to-band tunnelling, gate-induced drain leakage and other defect-assisted leakage mechanisms could all be important. Hole carrier velocity and impact ionisation were also studied in two batches of buried channel SiGe pMOSFET with x = 0.15 and x = 0.36, respectively. SiGe channel pMOSFETs were found to exhibit reduced impact ionisation compared to silicon control devices, which has been attributed to a strain-induced reduction of the density of states in the SiGe conduction and valence bands. Analysis of the hole carrier velocity indicated that pseudomorphic SiGe offered no performance enhancements over Si below 100 nm, possibly due to higher ion implantation damage and strain relaxation of the strained SiGe channel. The results indicate that velocity overshoot effects might not provide the performance improvements at short channel lengths that was previously hoped for.
44
Houssat, Mohammed. "Nanocomposite electrical insulation : multiscale characterization and local phenomena comprehension." Thesis, Toulouse 3, 2020. http://www.theses.fr/2020TOU30211.
Full textAbstract:
Dans le domaine de l'isolation électrique, il a été démontré que les matériaux hybrides organiques/inorganiques nanocomposites (NC) assurent une nette amélioration de leur fonctionnement à haute température/haute tension et permettent aux systèmes d'isolation électrique de renforcer leurs propriétés diélectriques. Récemment, il a été démontré que certaines modifications des propriétés électriques telles que la permittivité, la rupture diélectrique, la résistance aux décharges partielles ou la durée de vie étaient souvent attribuées à l'interphase nanoparticule/matrice, une région où la présence des nanoparticules modifie les propriétés de la matrice. De plus, des études récentes montrent qu'une fonctionnalisation de la surface des nanoparticules permet une meilleure dispersion dans la matrice hôte. Cette meilleure dispersion affecte la zone d'interphase et joue également un rôle majeur dans l'amélioration des propriétés des nanocomposites. Cependant, le rôle de l'interphase reste théorique et peu de résultats expérimentaux existent pour décrire ce phénomène. Par conséquent, en raison de l'échelle nanométrique de l'interphase, une caractérisation de ses propriétés demeure un défi. Au cours de cette thèse, deux études principales sont menées afin de mieux comprendre la relation structure-propriété dans les polymères nanocomposites. Tout d'abord, la microscopie à force atomique (AFM) est utilisée pour effectuer simultanément des mesures qualitatives et quantitatives de ces zones d'interaction dans le nanocomposite polyimide/nitrure de silicium (PI/Si3N4). Le mode Peak Force Quantitative Nano Mechanical (PF QNM) dérivé de l'AFM révèle la présence de l'interphase en mesurant les propriétés mécaniques (module de Young, déformation ou adhérence). Le mode microscopie à force électrostatique (EFM) est utilisé pour détecter et mesurer la permittivité locale de la matrice et de l'interphases. Par ailleurs, l'objectif de ce travail est de présenter l'effet de la fonctionnalisation de surface des nanoparticules de nitrure de silicium (Si3N4) sur les régions d'interphase. Ces résultats quantitatifs, à la fois mécaniques et électriques, permettent de comparer la dimension et les propriétés des interphase autour des nanoparticules traitées et non traitées. Par conséquent, cette nouvelle approche de caractérisation de cette zone confronte les résultats expérimentaux à des modèles théoriques. Un nouveau modèle basé sur les résultats expérimentaux obtenus est proposé. De plus, la deuxième partie de cette étude présente une caractérisation macroscopique des propriétés et de la rigidité diélectrique des films de polyimide pur, du nanocomposite avec des particules traitées et non traités. Les résultats révèlent le rôle de l'interphase sur la réduction du phénomène de polarisation de l'électrode (PE) dû aux mouvements ioniques surtout à haute température. Pour les nanoparticules non traitées, ces effets sont moins importants en raison de la formation d'agrégats. En revanche, une diminution nette de la PE est obtenue en fonctionnalisant la surface des nanoparticules avec le silane comme agent de couplage. Enfin, la rigidité diélectrique de l'ensemble des échantillons est mesurée et montre une augmentation considérable de la performance diélectrique des nanocomposites à haute température par rapport au PI purIn the electrical insulation field, it was demonstrated that nanocomposite (NC) organic/inorganic hybrid materials assure a distinct improvement of their high temperature/high voltage functioning and allow the electrical insulation to strengthen its dielectric properties. Recently, it was shown that some modifications of the electrical properties such as permittivity, dielectric breakdown, partial discharges resistance or lifetime are often awarded to the nanoparticle/matrix interphase, a region where the presence of the nanoparticle changes the matrix properties. Moreover, recent studies show that the nanoparticle surface functionalization allows a better dispersion of the particles within the host matrix. This better dispersion affects the interphase zone and plays a major role in the nanocomposite properties improvement as well. However, the role of the interphase remains theoretical and few experimental results exist to describe this phenomenon. Accordingly, because of its nanometer scale, the interphase properties characterization remains a challenge. Two main studies are carried out, during this thesis work, that can provide a better understanding of structure-properties relationships in polymer nanocomposite. First, Atomic Force Microscopy (AFM) is employed to make at the same time qualitative and quantitative measurements of these interaction zones within Polyimide/Silicon Nitride (PI/Si3N4) nanocomposite. The Peak Force Quantitative Nano Mechanical (PF QNM) AFM mode reveals the presence of the interphase by measuring mechanical properties (Young modulus, deformation or adhesion). Electrostatic force microscope (EFM) mode is used in order to detect and measure the matrix and interphase local permittivity. Moreover, the aim of this work is to present the effect of the surface functionalization of silicon nitride (Si3N4) nanoparticles on the interphase regions. Mechanical and electrical quantitative results permit comparing the interphase dimension and properties between treated and untreated Si3N4 nanoparticles. As a result, this new approach to characterize the nanocomposite interphase zone using local measurements confronts experimental results with theoretical models. A new model based on the obtained experimental results is proposed. In addition, the second part of this study presents a macroscopic investigation on the dielectric properties and breakdown strength of neat polyimide, untreated and treated nanocomposite films. Results reveal the interphase role on the reduction of the electrode polarization (EP) phenomenon due to ionic movements especially at high temperatures. For untreated nanoparticles, these effects are less important due to the aggregate formation. In contrast, an EP drastic decrease is obtained by functionalizing the nanofiller surface with a silane coupling agent. Finally, the high temperature breakdown strength for all samples is investigated and shows a considerable increase of nanocomposites dielectric performance at high temperature compared to neat PI
45
Prakash, Adithya. "Investigation on electrical properties of RF sputtered deposited BCN thin films." Master's thesis, University of Central Florida, 2013. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5838.
Full textAbstract:
The ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices mandate the need for new dielectric materials with low-k values. The interconnect delay can be reduced not only by the resistance of the conductor but also by decreasing the capacitance of dielectric layer. Also cross-talk is a major issue faced by semiconductor industry due to high value of k of the inter-dielectric layer (IDL) in a multilevel wiring scheme in Si ultra large scale integrated circuit (ULSI) devices. In order to reduce the time delay, it is necessary to introduce a wiring metal with low resistivity and a high quality insulating film with a low dielectric constant which leads to a reduction of the wiring capacitance. Boron carbon nitride (BCN) films are prepared by reactive magnetron sputtering from a B4C target and deposited to make metal-insulator-metal (MIM) sandwich structures using aluminum as the top and bottom electrodes. BCN films are deposited at various N2/Ar gas flow ratios, substrate temperatures and process pressures. The electrical characterization of the MIM devices includes capacitance vs. voltage (C-V), current vs voltage, and breakdown voltage characteristics. The above characterizations are performed as a function of deposition parameters.M.S.E.E.
Masters
Electrical Engineering and Computing
Engineering and Computer Science
Electrical Engineering
46
Pirondelli, Andrea. "Production and Electrical Characterization of Low Density Polyethylene-based Micro- and Nano-dielectrics containing Graphene Oxide, Functionalized Graphene and Carbon Black additives." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2016.
Find full textAbstract:
Oggigiorno la ricerca di nuovi materiali per gradatori di campo da impiegarsi in accessori di cavi ha iniziato a studiare alcuni materiali nano dielettrici con proprietà elettriche non lineari con la tensione ed aventi proprietà migliorate rispetto al materiale base. Per questo motivo in questo elaborato si sono studiati materiali nanostrutturati a base di polietilene a bassa densità (LDPE) contenenti nano polveri di grafene funzionalizzato (G*), ossido di grafene (GO) e carbon black (CB). Il primo obiettivo è stato quello di selezionare e ottimizzare i metodi di fabbricazione dei provini. La procedura di produzione è suddivisa in due parti. Nella prima parte è stata utilizzatala tecnica del ball-milling, mentre nella seconda un pressa termica (thermal pressing). Mediante la spettroscopia dielettrica a banda larga (BDS) si sono misurate le componenti reali e immaginarie della permettività e il modulo della conducibilità del materiale, in tensione alternata. Il miglioramento delle proprietà rispetto al provino di base composto dal solo polietilene si sono ottenute quando il quantitativo delle nanopolveri era maggiore. Le misure sono state effettuate sia a 3 V che a 1 kV. Attraverso misurazioni di termogravimetria (TGA) si è osservato l’aumento della resistenza termica di tutti i provini, soprattutto nel caso quando la % di nanopolveri è maggiore. Per i provini LDPE + 0.3 wt% GO e LDPE + 0.3 wt% G* si è misurata la resistenza alle scariche parziali attraverso la valutazione dell’erosione superficiale dei provini. Per il provino contenente G* è stato registrato una diminuzione del 22% del volume eroso, rispetto al materiale base, mentre per quello contenente GO non vi sono state variazioni significative. Infine si è ricercata la resistenza al breakdown di questi ultimi tre provini sopra citati. Per la caratterizzazione si è fatto uso della distribuzione di Weibull. Lo scale parameter α risulta aumentare solo per il provino LDPE + 0.3 wt% G*.
47
Jayaraman, Rajsekhar. "Reliability and 1/f noise properties of MOSFETs with nitrided oxide gate dielectrics." Thesis, Massachusetts Institute of Technology, 1988. http://hdl.handle.net/1721.1/41582.
Full text
48
Smith, Joshua Dee. "Verifying Molecular Dynamics Using Dielectric Spectroscopy." BYU ScholarsArchive, 2014. https://scholarsarchive.byu.edu/etd/4221.
Full textAbstract:
The electrical properties of proteins in solution are important for their structure and function. Computational biophysics studies of proteins need accurate parameters to ensure that numerical simulations match physical reality. Past work in this eld has compared the electrical properties of proteins obtained from dielectric spectroscopy to numerical simulations of proteins in water with adjustment of pKa values to try to capture the inevitable changes in electrical conformation that will occur in a complex structure such as a folded protein. However, fundamental veri cation of the charge parameters of the amino acid building blocks in common molecular dynamics software packages with electrical experiments needs to be performed to have increased con dence in the results from numerical simulations. The aim of this thesis is to start from a fundamental building block, the single amino acid alanine, and to compare numerical simulations of this amino acid in water using parameters from commonly used charge structures in CHARMM, GROMOS, and OPLS, with electrical parameters obtained from dielectric spectroscopy experiments in the GHz range. To this end, multiple molecular dynamics simulations were performed to accurately determine how these different charge structures yield different dielectric increments. Additionally, a commercial RF dielectric measurement probe was modi ed to perform measurements on solutions containing alanine at different concentrations. Using regression, the dielectric increment of alanine is readily determined and compared with the numerical simulations. The results indicate that the CHARMM and OPLS parameters seem to adequately capture the charge con guration of alanine in solution, while the GROMOS parameters produce a dielectric increment but do not seem to adequately capture the charge con guration of alanine in solution. These studies lay the foundation for future studies of additional amino acids in solution as well as a stepping stone for larger simulations of the electrical properties of fully solvated proteins in solution.
49
Jiang, Yun-Chi, and 江雲祺. "Physical and Electrical Properties of Spin-On Low Dielectric Constant Materials for ULSI Intermetal Dielectric Applications." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/77468776464130134647.
Full textAbstract:
碩士國立交通大學
電子工程學系
85
In this thesis, we explore five different kinds of spin-on low dielectric constant materials. We characterize their physical and electrical properties. In physical properties, we focus on film moisture absorbance and thermal stability. We use thin film stress measurement system and FTIR to understand their properties. We find that fluorinated polymers have better characteristics.In electrical properties, we explore the leakage current, breakdown field, and dielectric constant. Fluorinated polymers have lower leakage current, higher breakdown, and lower dielectric constant but the film adhesion on silicon or oxide is poor. We also explore the effect of copper on low dielectric film. Without barrier metal, FOX-15 is very leak after 350 oC anneal. Without barrier metal, PAE-2 cured at 500 oC can withstand Cu diffusion up to 400 oC anneal. With diffusion barriers, the thermal stability can reach 500 oC.
50
Singha, Santanu. "Studies On The Dielectric And Electrical Insulation Properties Of Polymer Nanocomposites." Thesis, 2008. http://hdl.handle.net/2005/842.
Full textAbstract:
Today, nanotechnology has added a new dimension to materials technology by creating opportunities to significantly enhance the properties of existing conventional materials. Polymer nanocomposites belong to one such class of materials and even though they show tremendous promise for dielectric/electrical insulation applications (“nanodielectrics” being the buzzword), the understanding related to these systems is very premature. Considering the desired research needs with respect to some of the dielectric properties of polymer nanocomposites, this study attempts to generate an understanding on some of the existing issues through a systematic and detailed experimental investigation coupled with a critical analysis of the data. An epoxy based nanocomposite system is chosen for this study along with four different choices of nano-fillers, viz. TiO2, Al2O3, ZnO and SiO2. The focus of this study is on the properties of nanocomposites at low filler loadings in the range of 0.1 - 5% by weight and the properties under investigation are the permittivity/tan delta behaviors, DC volume resistivity, AC dielectric strength and electrical discharge resistant characteristics. Significant efforts have also been directed towards addressing the interface interaction phenomena in epoxy nanocomposites and their subsequent influence on the dielectric properties of the material.
The accurate characterization of the dielectric properties for polymer nanocomposites depends on the dispersion of nanoparticles in the polymer matrix and to achieve a good dispersion of nanoparticles in the epoxy matrix for the present study, a systematic design of experiments (DOE) is carried out involving two different processing methods. Consequently, a laboratory based epoxy nanocomposite processing methodology is proposed in this thesis and this process is found to be successful in dispersing nanoparticles effectively in the epoxy matrix, especially at filler concentrations lower than 5% by weight. Nanocomposite samples for the study are prepared using this method and a rigorous conditioning is performed before the dielectric measurements.
The dielectric properties of epoxy nanocomposites obtained in the present study show interesting and intriguing characteristics when compared to those of unfilled epoxy and microcomposite systems and few of the results are unique and advantageous. In an unexpected observation, the addition of nanoparticles to epoxy is found to reduce the value of nanocomposite real permittivity below that of unfilled epoxy over a wide range of frequencies. Similarly, it has been observed that irrespective of the filler type, tan delta values in the case of nanocomposites are either same or lower than the value of unfilled epoxy up to a filler loading of 5% by weight, depending on the frequency and filler concentration. In fact, the nanocomposite real permittivities and tan delta values are also observed to be lower as compared to the corresponding microcomposites of the same constituent materials at the same filler loading. In another significant result, enhancements in the electrical discharge resistant characteristics of epoxy nanocomposites (with SiO2/Al2O3 nanoparticles) are observed when compared to unfilled epoxy, especially at longer durations of discharge exposures. Contrary to these encouragements observed for few of the dielectric properties, the trends of DC volume resistivity and AC dielectric breakdown strength characteristics in epoxy nanocomposites are found to be different. Irrespective of the type of filler in the epoxy matrix, it has been observed that the values of both AC dielectric strengths and DC volume resistivities are lower than that of unfilled epoxy for the filler loadings investigated. The results mentioned above seem to suggest that there has to be an interaction between the nanoparticles and the epoxy chains in the nanocomposite and therefore, glass transition temperature (Tg) measurements are performed to characterize the interaction phenomena, if any. The results of Tg for all the investigated nanocomposites also show interesting trends and they are observed to be lower than that of unfilled epoxy up to certain nanoparticle loadings. This lowering of the Tg in epoxy nanocomposites was not observed in the case of unfilled and microcomposite systems thereby strongly confirming the fact that there exists an interaction between the epoxy chains and nanoparticles in the nanocomposite. Considering the variations obtained for the nanocomposite real permittivity and Tg with respect to filler loading, a dual nanolayer interface model is utilized to explain the interaction dynamics and according to the model, interactions between epoxy chains and nanoparticles lead to the formation of two epoxy nanolayers around the nanoparticle. Analysis shows that the characteristics of the interface region have a strong influence on the dielectric behaviors of the nanocomposites and the suggested interface model seems to fit the characteristics obtained for the different dielectric/electrical insulation properties rather well. Further investigations are performed to understand the nature of interaction between nanoparticles and epoxy chains through FTIR studies and results show that there is probably an occurrence of hydrogen bonding between the epoxide groups of the epoxy resin and the free hydroxyl (OH) groups present on the nanoparticle surfaces. The results obtained for the dielectric properties of epoxy nanocomposites in this study have widened the scope of applications of these functional materials in the electrical sector. The occurrence of lower values of real permittivity for nanocomposites is definitely unique and unexpected and this result has huge potential in electronic component packaging applications. Further, the advantages related to tan delta and electrical discharge resistance for these materials carry lot of significance since, electrical insulating materials with enhanced electrical aging properties can be designed using nanocomposite technology. Although the characteristics of AC dielectric strengths and DC volume resistivities are not found to be strictly advantageous for epoxy nanocomposites at the investigated filler loadings, these properties can be optimized when designing insulation systems for practical applications. In spite of all these advantages, serious and systematic research efforts are still desired before these materials can be successfully utilized in electrical equipment.