Relevant bibliographies by topics / Electrical doping

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Electrical doping'

Author: Grafiati
Published: 4 June 2021
Last updated: 9 February 2022

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Journal articles on the topic "Electrical doping"

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Lu, Zhen Ya, Yu Xiang Liu, Zhi Wu Chen, and Jian Qing Wu. "Effect of Ho2O3 Doping on Performance of ZnO Varistor." Key Engineering Materials 368-372 (February 2008): 507–9. http://dx.doi.org/10.4028/www.scientific.net/kem.368-372.507.

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The effect of Ho2O3 doping on the electrical properties and microstructure of ZnO base varistor was investigated. It was found that Ho2O3 is an effective dopant for increasing the breakdown electric filed. The Ho2O3 doping can also improve the nonlinear performance both in low and high current area. But excessive doping of Ho2O3 will decrease the withstanding surge current. With 0.8mol% Ho2O3 doping, the varistor samples exhibit a breakdown voltage of about 400V/mm, a nonlinear coefficient of 80 and the withstanding surge current of 8/20μs, waveshape is higher than 5kA. Ho2O3 dopant can hinder
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Stockmeier, Ludwig, Mohamed Elsayed, Reinhard Krause-Rehberg, Markus Zschorsch, Lothar Lehmann, and Jochen Friedrich. "Electrically Inactive Dopants in Heavily Doped As-Grown Czochralski Silicon." Solid State Phenomena 242 (October 2015): 10–14. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.10.

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To determine the electrically inactive fraction of As or P in heavily doped as-grown Czochralski Si 4-point resistivity and SIMS measurements were carried out. No clear trend for the electrical inactive fraction was found with an increasing dopant concentration, though a mean electrical inactive fraction of 11.5% for As doping could be determined.Experimental results on a dopant-vacancy complex in as-grown Si are scarce, hence temperature-dependent positron annihilation lifetime spectroscopy (PALS) was carried out on several heavily As and P doped as-grown Si samples. The measured average posi
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Direksilp, Chatrawee, and Anuvat Sirivat. "Synthesis and Characterization of Hollow-Sphered Poly(N-methyaniline) for Enhanced Electrical Conductivity Based on the Anionic Surfactant Templates and Doping." Polymers 12, no. 5 (2020): 1023. http://dx.doi.org/10.3390/polym12051023.

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Poly(N-methylaniline) (PNMA) is a polyaniline derivative with a methyl substituent on the nitrogen atom. PNMA is of interest owing to its higher solubility in organic solvents when compared to the unsubstituted polyaniline. However, the electrical conductivity of polyaniline derivatives suffers from chemical substitution. PNMA was synthesized via emulsion polymerization using three different anionic surfactants, namely sodium dodecylsulfate (SDS), sodium dodecylbenzenesulfonate (SDBS), and dioctyl sodium sulfosuccinate (AOT). The effects of surfactant structures and concentrations on electrica
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Tammarugwattana, Narin, Kitipong Mano, Chaloempol Saributr, et al. "Growth and Characterizations of Tin-Doped on Nickel-Phthalocyanine as a Novel Nanomaterial." Advanced Materials Research 1131 (December 2015): 39–42. http://dx.doi.org/10.4028/www.scientific.net/amr.1131.39.

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Tin-doped nickel phthalocyanine thin films (Sn-doped NiPc) were deposited by thermal co-evaporation method. Doping concentration of tin in NiPc was controlled via different deposition rates between metal dopent and host organic material. Properties of the thin films doped by tin in the range of 3 to 15% were characterized by atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), UV-Visible spectroscopy and X-ray photoelectron spectroscopy (XPS). Furthermore, electrical properties of Al/Sn-doped-NiPc/ITO devices i.e. charge carrier concentration and carrier mobility
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Anbarasi, M., V. Nagarethinam, and A. Balu. "Investigations on the structural, morphological, optical and electrical properties of undoped and nanosized Zn-doped CdS thin films prepared by a simplified spray technique." Materials Science-Poland 32, no. 4 (2014): 652–60. http://dx.doi.org/10.2478/s13536-014-0244-7.

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AbstractCdS and Zn-doped CdS (CdS:Zn) thin films have been deposited on glass substrates by spray pyrolysis technique using a perfume atomizer. The influence of Zn incorporation on the structural, morphological, optical and electrical properties of the films has been studied. All the films exhibit hexagonal phase with (0 0 2) as preferential orientation. A shift of the (0 0 2) diffraction peak towards higher diffraction angle is observed with increased Zn doping. The optical studies confirmed that the transparency increases as Zn doping level increases and the film coated with 2 at.% Zn doping
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Licurgo, J. S. C., G. R. de Almeida Neto, and H. R. Paes Junior. "Structural, electrical and optical properties of copper-doped zinc oxide films deposited by spray pyrolysis." Cerâmica 66, no. 379 (2020): 284–90. http://dx.doi.org/10.1590/0366-69132020663792877.

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Abstract The effect of copper doping on structural, electrical, and optical properties of zinc oxide films was evaluated. Copper-doped films (ZnO:Cu) were successfully deposited on a glass substrate by spray pyrolysis at doping levels of 0, 2.5, and 7.5 at% (ZnO, ZC2.5, ZC7.5). All films were polycrystalline, single-phase with ZnO hexagonal wurtzite structure. The films presented nanostructured crystallites, from 36.7 to 38.2 nm. Cu doping increased the electrical conductivity of the ZnO films; this change was proportional to the Cu concentration. The films presented high optical transmittance
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Skorupa, Małgorzata, Daria Więcławska, Dominika Czerwińska-Główka, Magdalena Skonieczna, and Katarzyna Krukiewicz. "Dopant-Dependent Electrical and Biological Functionality of PEDOT in Bioelectronics." Polymers 13, no. 12 (2021): 1948. http://dx.doi.org/10.3390/polym13121948.

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The aspiration to interact living cells with electronics challenges researchers to develop materials working at the interface of these two distinct environments. A successful interfacing coating should exhibit both biocompatibility and desired functionality of a bio-integrated device. Taking into account biodiversity, the tissue interface should be fine-tuned to the specific requirements of the bioelectronic systems. In this study, we pointed to electrochemical doping of conducting polymers as a strategy enabling the efficient manufacturing of interfacing platforms, in which features could be
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Zhang, Xiwei, Jiansheng Jie, Xiujuan Zhang, and Fengjun Yu. "Bismuth-catalyzed and doped p-type ZnSe nanowires and their temperature-dependent charge transport properties." Journal of Materials Chemistry C 4, no. 4 (2016): 857–62. http://dx.doi.org/10.1039/c5tc02853a.

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Simultaneous ZnSe nanowire growth and p-type doping is realized in one step by using Bi as the catalyst and dopant via chemical vapor deposition. Temperature-dependent electrical measurements are used for understanding the charge transport mechanism and the doping effect.
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Kelkar, Deepali, and Ashish Chourasia. "Structural, Thermal and Electrical Properties of Doped Poly(3,4 ethylenedioxythiophene)." Chemistry & Chemical Technology 10, no. 4 (2016): 395–400. http://dx.doi.org/10.23939/chcht10.04.395.

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Poly(3,4-ethylenedioxythiophene) (PEDOT) was chemically synthesized, undoped and then re-doped using FeCl3 as well as camphorsulfonic acid (CSA). FT-IR results confirm the nature of the synthesized and doped samples. XRD analysis indicates crystal structure modification after doping and was also used to calculate crystallinity of samples. Crystallinity increases after FeCl3 doping, whereas it reduces due to CSA doping. TGA-DTA results show reduction in Tg value for FeCl3 doped sample while it increases for CSA doped samples compared to that of undoped PEDOT. Reduction in Tg indicates plasticiz
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Kippelen, Bernard. "Mutual electrical doping in polymers." Nature Materials 19, no. 7 (2020): 702–4. http://dx.doi.org/10.1038/s41563-020-0639-2.

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Dissertations / Theses on the topic "Electrical doping"

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Biswas, Robin Gopal. "Electrical properties of high resolution doping structures." Thesis, University of Warwick, 1992. http://wrap.warwick.ac.uk/110579/.

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The electrical transport properties and device applications of certain high resolution doping structures in silicon are discussed in this thesis. The promise of enhanced device properties from a high resolution doping structure was envisaged through the use of doping supeelattices. These structures are unobtainable by typical high temperature silicon processing technology and are well suited to fabrication by Molecular Beam Epitaxy. The potential for enhanced mobilities in Boron and Antimony doping superlattices has been investigated by the author. Interpretation of mobility data proved comple
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Rahman, Nadir E. (Nadir Ehsanur) 1971. "Extraction of MOSFET doping profiles from device electrical measurements." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/10247.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.<br>Includes bibliographical references (leaves 84-88).<br>by Nadir E. Rahman.<br>M.Eng.
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Lin, Xin. "Molecular Doping of Organic Semiconductors." Thesis, Princeton University, 2018. http://pqdtopen.proquest.com/#viewpdf?dispub=10752186.

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<p> Molecular doping of organic semiconductors is becoming exceedingly important and has led to significant commercial developments in organic electronics, since it allows to overcome performance deficiencies and material limitations. </p><p> Increasing attention has recently been placed on using very low concentrations of dopants to eliminate the effect of gap states in organic semiconductors, in order to improve carrier mobility, adjust the energy level alignment at interfaces, and achieve overall better device performance. However, direct spectroscopic observations and quantitative analys
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Al, Johani Ebrahim Dakhil. "Surface transfer doping of diamond for power electronics." Thesis, Massachusetts Institute of Technology, 2020. https://hdl.handle.net/1721.1/129079.

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Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, September, 2020<br>Cataloged from student-submitted PDF of thesis.<br>Includes bibliographical references (pages 77-80).<br>The quest for a suitable wide-bandgap semiconductor for high-power and high-frequency applications is well motivated; wide-bandgap semiconductors generally exhibit a high breakdown field and can therefore support a high voltage over short distances. Diamond (Bandgap of 5.5 eV) in particular is an attractive prospect since its thermal conductivity and radiatio
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Blundred, Giles. "The electrical response of manganese doping in stannate, antinomate and ruthenate pyrochlores." Thesis, Keele University, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.269136.

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Crowley, Kyle McKinley. "Electrical Characterization, Transport, and Doping Effects in Two-Dimensional Transition Metal Oxides." Case Western Reserve University School of Graduate Studies / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=case1597327584506971.

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Jacobs, Thorsten. "Unraveling the cuprate superconductor phase diagram : Intrinsic tunneling spectroscopy and electrical doping." Doctoral thesis, Stockholms universitet, Fysikum, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:su:diva-129270.

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High-temperature superconductors belong to the group of strongly correlated materials. In these compounds, complex repulsive electron interactions and a large number of degrees of freedom lead to a rich variety of states of matter. Exotic phases like the pseudogap, charge-, spin- and pair-density waves, but also the remarkable phenomenon of superconductivity emerge, depending on doping level and temperature. However, up to now it is unclear what exactly causes these states, to what extent they are coexisting or competing, and where their borders in the phase diagram lie. A better understanding
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Wellenius, Patrick. "Nitrogen Doping and Ion Beam Processing of Zinc Oxide Thin Films." NCSU, 2006. http://www.lib.ncsu.edu/theses/available/etd-01042006-015801/.

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The modification of single crystal epitaxial ZnO thin films grown by Pulsed Laser Deposition on c-axis oriented sapphire substrates by Ion Beam Processing was investigated. Nitrogen doping of the films was attempted using nuclear transmutation using the <sup>16</sup>O (<sup>3</sup>He, <sup>4</sup>He) <sup>15</sup>O reaction at 6.6 MeV. The <sup>15</sup>O product is unstable and decays to <sup>15</sup>N after several minutes by positron emission. There are several potential advantages to using nuclear transmutation including producing nitrogen atoms on the correct lattice site for doping and re
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Pop, Eric 1975. "CMOS inverse doping profile extraction and substrate current modeling." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/80565.

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Thesis (S.B. and M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.<br>Includes bibliographical references (p. 95-101).<br>by Eric Pop.<br>S.B.and M.Eng.
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Fang, Zhihua. "N and p-type doping of GaN nanowires : from growth to electrical properties." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAY007/document.

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Les nanostructures à base de nitrures d’éléments III suscitent un intérêt croissant, en raison de leurs propriétés singulières et de leurs applications technologiques potentielles, dans les diodes électroluminescentes (LED) notamment. La maîtrise et le contrôle du dopage de ces nanostructures est un enjeu crucial, mais difficile. A ce sujet, cette thèse apporte une contribution nouvelle, en explorant le processus de dopage de type n et p des nanofils (NFs) de GaN crus par épitaxie par jets moléculaires (EJM). En particulier, les propriétés électriques de ces structures ont été caractérisées pa
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Books on the topic "Electrical doping"

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Symposium C on Photorefractive Materials: Growth and Doping, Optical and Electrical Characterizations, Charge Transfer Process and Space Charge Field Effects, Applications (1994 Strasbourg, France). Photorefractive materials: Proceedings of Symposium C on Photorefractive Materials: Growth and Doping, Optical and Electrical Characterizations, Charge Transfer Process and Space Charge Field Effects, Applications of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994. Elsevier, 1995.

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Symposium, C. on Photorefractive Materials :. Growth and Doping Optical and Electrical Characterizations Charge Transfer Processes and Space Charge Field Effects (1994 Strasbourg France). Photorefractive materials: Proceedings of symposium C on photorefractive materials : growth and doping, optical and electrical characterizations, charge transfer processes and space charge field effects, applications of the 1994 E-MRS spring conference, Strasbourg, France, May 24-27, 1994. North Hollnad/Elsevier, 1995.

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Tan, Cher Ming. Band structure and electrical transport in n-i-n-i doping superlattices. 1992.

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Georges, Hadziioannou, and Hutten Paul F. van, eds. Semiconducting polymers: Chemistry, physics, and engineering. Wiley-VCH, 2000.

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Semiconducting Polymers: Chemistry, Physics, and Engineering. Wiley-VCH, 2000.

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Georges, Hadziioannou, and Malliaras George G, eds. Semiconducting polymers: Chemistry, physics and engineering. 2nd ed. Wiley-VCH, 2007.

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(Editor), Georges Hadziioannou, and George G. Malliaras (Editor), eds. Semiconducting Polymers: Chemistry, Physics and Engineering. 2nd ed. Wiley-VCH, 2007.

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Hadziioannou, Georges, and Paul F. van Hutten. Semiconducting Polymers: Chemistry, Physics and Engineering. Wiley & Sons, Limited, John, 2005.

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Book chapters on the topic "Electrical doping"

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Waag, Andreas. "Electrical Conductivity and Doping." In Zinc Oxide. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-10577-7_5.

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Maruszewski, Bogdan Tadeusz. "Fullerenes: Thermomechanics, Doping, Electrical Conductivity." In Encyclopedia of Thermal Stresses. Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-007-2739-7_1030.

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Bässler, H. "Electrical Transport and Doping of Polydiacetylenes." In Polydiacetylenes. Springer Netherlands, 1985. http://dx.doi.org/10.1007/978-94-017-2713-6_11.

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Chauhan, Sudakar Singh, Gaurav Verma, and Vinod Naik. "Characteristics Analysis of Si0.5Ge0.5 Doping-Less PNPN TFET." In Lecture Notes in Electrical Engineering. Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8240-5_22.

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Medeiros, Francisco, Juliana Medeiros, Fausto Ayres, et al. "An Information System to Support the Anti-doping Process." In Lecture Notes in Electrical Engineering. Springer Singapore, 2016. http://dx.doi.org/10.1007/978-981-10-0557-2_10.

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Li, Yiming, and Ying-Chieh Chen. "Inverse Doping Profile of MOSFETs via Geometric Programming." In Scientific Computing in Electrical Engineering SCEE 2010. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22453-9_37.

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Kakalios, J., and H. Fritzsche. "Optical and Electrical Properties of Amorphous Semiconductor Doping Superlattices." In Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_110.

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Mahata, S., and S. S. Mahato. "Doping Effects on Optical Properties of Titania Composite in Terahertz Range." In Lecture Notes in Electrical Engineering. Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-33-4489-1_9.

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Ahmed, M. T., S. Roth, and M. D. Migahed. "DC Electrical Anisotropy of Stretchoriented Polyacetylene: Doping and Temperature Dependence." In Electronic Properties of Polymers. Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84705-9_21.

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Gupta, Abhinav, Amrish Kumar, Sanjeev Rai, and Rajeev Tripathi. "Impact of Oxide Engineering on Analog/RF Performance of Doping-Less DMDG MOSFET." In Lecture Notes in Electrical Engineering. Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-32-9775-3_50.

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Conference papers on the topic "Electrical doping"

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Marinskiy, D. "Non-Contact Electrical Doping Profiling." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY: 2003 International Conference on Characterization and Metrology for ULSI Technology. AIP, 2003. http://dx.doi.org/10.1063/1.1622561.

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Ouwerling, G. J. L., J. C. Staalenburg, and M. Kleefstra. "Electrical characterization of 2-D doping profiles." In International Conference on Microelectronic Test Structures. IEEE, 1990. http://dx.doi.org/10.1109/icmts.1990.67871.

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Lai, LiLung, Li Yang, Chunhui Wang, and Yong Wu. "To Reveal Invisible Doping Defect by Nanoprobing Analysis, Scanning Capacitance Microscopy, and Simulation." In ISTFA 2017. ASM International, 2017. http://dx.doi.org/10.31399/asm.cp.istfa2017p0437.

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Abstract Modern techniques of semiconductor physical failure analysis are effective at revealing physical defects and device material composition, however, dopant profiles/ concentrations are not easily determined since these materials are in trace concentrations. Therefore, defects related to dopants are often referred to as invisible defects. New techniques have been incorporated into failure analysis to reveal the invisible defects resulting from electrical carriers (via SCM/SSRM) and physical doping profile (via STEM/EDS) in nm-scale dimension. Using nanoprobing analysis, simulation for el
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Ruden, P. Paul. "Electrical And Optical Properties Of Semiconductor Doping Superlattices." In Semiconductor Conferences, edited by Gottfried H. Doehler and Joel N. Schulman. SPIE, 1987. http://dx.doi.org/10.1117/12.940818.

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Gursel, Amira Tandirovic, Parviz Elahi, F. Omer Ilday, and M. Sadettin Ozyazici. "Theoretical analysis of doping management." In 2013 8th International Conference on Electrical and Electronics Engineering (ELECO). IEEE, 2013. http://dx.doi.org/10.1109/eleco.2013.6713918.

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Nautiyal, Payal, Anjali Agrawal, Shweta Kumari, Hema Sahu, Alok Naugarhiya, and Shrish Verma. "Electrical characteristic investigation of variation vertical doping superjunction UMOS." In 2019 IEEE 16th India Council International Conference (INDICON). IEEE, 2019. http://dx.doi.org/10.1109/indicon47234.2019.9030340.

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Kim, Jang-Joo, Dong-Seok Leem, and Jae-Hyun Lee. "Electrical doping for high performance organic light emitting diodes." In SPIE OPTO: Integrated Optoelectronic Devices, edited by Robert L. Nelson, François Kajzar, and Toshikuni Kaino. SPIE, 2009. http://dx.doi.org/10.1117/12.815261.

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Marinskiy, D. "Self-calibrating Approach for Non-Contact Electrical Doping Profiling." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005. AIP, 2005. http://dx.doi.org/10.1063/1.2062971.

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Nayak, Amrita, Prasanna K. Das, and S. K. Patri. "Effect of vanadium doping on electrical properties of KNN." In DAE SOLID STATE PHYSICS SYMPOSIUM 2019. AIP Publishing, 2020. http://dx.doi.org/10.1063/5.0017556.

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Adhikari, Nirmal, Phil Kaszuba, Gaitan Mathieu, Erik McCullen, Thom Hartswick, and Joe Myer. "A Novel Sample Preparation Approach for Dopant Profiling of 14 nm FinFET Devices with Scanning Capacitance Microscopy." In ISTFA 2020. ASM International, 2020. http://dx.doi.org/10.31399/asm.cp.istfa2020p0375.

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Abstract Three-dimensional device (FinFET) doping requirements are challenging due to fin sidewall doping, crystallinity control, junction profile control, and leakage control in the fin. In addition, physical failure analyses of FinFETs can frequently reach a “dead end” with a No Defect Found (NDF) result when channel doping issues are the suspected culprit (e.g., high Vt, low Vt, low gain, sub-threshold leakage, etc.). In new technology development, the lack of empirical dopant profile data to support device and process models and engineering has had, and continues to have, a profound negati
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Reports on the topic "Electrical doping"

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Tao, Meng, and Qiming Zhang. Doping Cu{sub 2}O in Electrolyte Solution: Dopant Incorporation, Atomic Structures and Electrical Properties. Office of Scientific and Technical Information (OSTI), 2013. http://dx.doi.org/10.2172/1107931.

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Jones, Robert M., Alison K. Thurston, Robyn A. Barbato, and Eftihia V. Barnes. Evaluating the Conductive Properties of Melanin-Producing Fungus, Curvularia lunata, after Copper Doping. Engineer Research and Development Center (U.S.), 2020. http://dx.doi.org/10.21079/11681/38641.

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Melanins are pigmented biomacromolecules found throughout all domains of life. Of melanins’ many unique properties, their malleable electrically conductive properties and their ability to chelate could allow them to serve as material for bioelectronics. Studies have shown that sheets or pellets of melanin conduct low levels of electricity; however, electrical conductance of melanin within a cellular context has not been thoroughly investigated. In addition, given the chelating properties of melanin, it is possible that introducing traditionally con-ductive metal ions could improve the conducti
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Zhu, Jiahua, Thomas C. Ho, Zhanhu Guo, et al. Electrical Conductivity Manipulation and Switching Phenomena of Poly(p-Phenylenebenzobisthiazole) Thin Film by Doping Process. Defense Technical Information Center, 2010. http://dx.doi.org/10.21236/ada538782.

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