Log in

Relevant bibliographies by topics / Electrical doping / Journal articles

To see the other types of publications on this topic, follow the link: Electrical doping.

Journal articles on the topic 'Electrical doping'

Author: Grafiati

Published: 4 June 2021

Last updated: 9 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Electrical doping.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Lu, Zhen Ya, Yu Xiang Liu, Zhi Wu Chen, and Jian Qing Wu. "Effect of Ho₂O₃ Doping on Performance of ZnO Varistor." Key Engineering Materials 368-372 (February 2008): 507–9. http://dx.doi.org/10.4028/www.scientific.net/kem.368-372.507.

Full text

Abstract:

The effect of Ho2O3 doping on the electrical properties and microstructure of ZnO base varistor was investigated. It was found that Ho2O3 is an effective dopant for increasing the breakdown electric filed. The Ho2O3 doping can also improve the nonlinear performance both in low and high current area. But excessive doping of Ho2O3 will decrease the withstanding surge current. With 0.8mol% Ho2O3 doping, the varistor samples exhibit a breakdown voltage of about 400V/mm, a nonlinear coefficient of 80 and the withstanding surge current of 8/20μs, waveshape is higher than 5kA. Ho2O3 dopant can hinder

APA, Harvard, Vancouver, ISO, and other styles

2

Stockmeier, Ludwig, Mohamed Elsayed, Reinhard Krause-Rehberg, Markus Zschorsch, Lothar Lehmann, and Jochen Friedrich. "Electrically Inactive Dopants in Heavily Doped As-Grown Czochralski Silicon." Solid State Phenomena 242 (October 2015): 10–14. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.10.

Full text

Abstract:

To determine the electrically inactive fraction of As or P in heavily doped as-grown Czochralski Si 4-point resistivity and SIMS measurements were carried out. No clear trend for the electrical inactive fraction was found with an increasing dopant concentration, though a mean electrical inactive fraction of 11.5% for As doping could be determined.Experimental results on a dopant-vacancy complex in as-grown Si are scarce, hence temperature-dependent positron annihilation lifetime spectroscopy (PALS) was carried out on several heavily As and P doped as-grown Si samples. The measured average posi

APA, Harvard, Vancouver, ISO, and other styles

3

Direksilp, Chatrawee, and Anuvat Sirivat. "Synthesis and Characterization of Hollow-Sphered Poly(N-methyaniline) for Enhanced Electrical Conductivity Based on the Anionic Surfactant Templates and Doping." Polymers 12, no. 5 (2020): 1023. http://dx.doi.org/10.3390/polym12051023.

Full text

Abstract:

Poly(N-methylaniline) (PNMA) is a polyaniline derivative with a methyl substituent on the nitrogen atom. PNMA is of interest owing to its higher solubility in organic solvents when compared to the unsubstituted polyaniline. However, the electrical conductivity of polyaniline derivatives suffers from chemical substitution. PNMA was synthesized via emulsion polymerization using three different anionic surfactants, namely sodium dodecylsulfate (SDS), sodium dodecylbenzenesulfonate (SDBS), and dioctyl sodium sulfosuccinate (AOT). The effects of surfactant structures and concentrations on electrica

APA, Harvard, Vancouver, ISO, and other styles

4

Tammarugwattana, Narin, Kitipong Mano, Chaloempol Saributr, et al. "Growth and Characterizations of Tin-Doped on Nickel-Phthalocyanine as a Novel Nanomaterial." Advanced Materials Research 1131 (December 2015): 39–42. http://dx.doi.org/10.4028/www.scientific.net/amr.1131.39.

Full text

Abstract:

Tin-doped nickel phthalocyanine thin films (Sn-doped NiPc) were deposited by thermal co-evaporation method. Doping concentration of tin in NiPc was controlled via different deposition rates between metal dopent and host organic material. Properties of the thin films doped by tin in the range of 3 to 15% were characterized by atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), UV-Visible spectroscopy and X-ray photoelectron spectroscopy (XPS). Furthermore, electrical properties of Al/Sn-doped-NiPc/ITO devices i.e. charge carrier concentration and carrier mobility

APA, Harvard, Vancouver, ISO, and other styles

5

Anbarasi, M., V. Nagarethinam, and A. Balu. "Investigations on the structural, morphological, optical and electrical properties of undoped and nanosized Zn-doped CdS thin films prepared by a simplified spray technique." Materials Science-Poland 32, no. 4 (2014): 652–60. http://dx.doi.org/10.2478/s13536-014-0244-7.

Full text

Abstract:

AbstractCdS and Zn-doped CdS (CdS:Zn) thin films have been deposited on glass substrates by spray pyrolysis technique using a perfume atomizer. The influence of Zn incorporation on the structural, morphological, optical and electrical properties of the films has been studied. All the films exhibit hexagonal phase with (0 0 2) as preferential orientation. A shift of the (0 0 2) diffraction peak towards higher diffraction angle is observed with increased Zn doping. The optical studies confirmed that the transparency increases as Zn doping level increases and the film coated with 2 at.% Zn doping

APA, Harvard, Vancouver, ISO, and other styles

6

Licurgo, J. S. C., G. R. de Almeida Neto, and H. R. Paes Junior. "Structural, electrical and optical properties of copper-doped zinc oxide films deposited by spray pyrolysis." Cerâmica 66, no. 379 (2020): 284–90. http://dx.doi.org/10.1590/0366-69132020663792877.

Full text

Abstract:

Abstract The effect of copper doping on structural, electrical, and optical properties of zinc oxide films was evaluated. Copper-doped films (ZnO:Cu) were successfully deposited on a glass substrate by spray pyrolysis at doping levels of 0, 2.5, and 7.5 at% (ZnO, ZC2.5, ZC7.5). All films were polycrystalline, single-phase with ZnO hexagonal wurtzite structure. The films presented nanostructured crystallites, from 36.7 to 38.2 nm. Cu doping increased the electrical conductivity of the ZnO films; this change was proportional to the Cu concentration. The films presented high optical transmittance

APA, Harvard, Vancouver, ISO, and other styles

7

Skorupa, Małgorzata, Daria Więcławska, Dominika Czerwińska-Główka, Magdalena Skonieczna, and Katarzyna Krukiewicz. "Dopant-Dependent Electrical and Biological Functionality of PEDOT in Bioelectronics." Polymers 13, no. 12 (2021): 1948. http://dx.doi.org/10.3390/polym13121948.

Full text

Abstract:

The aspiration to interact living cells with electronics challenges researchers to develop materials working at the interface of these two distinct environments. A successful interfacing coating should exhibit both biocompatibility and desired functionality of a bio-integrated device. Taking into account biodiversity, the tissue interface should be fine-tuned to the specific requirements of the bioelectronic systems. In this study, we pointed to electrochemical doping of conducting polymers as a strategy enabling the efficient manufacturing of interfacing platforms, in which features could be

APA, Harvard, Vancouver, ISO, and other styles

8

Zhang, Xiwei, Jiansheng Jie, Xiujuan Zhang, and Fengjun Yu. "Bismuth-catalyzed and doped p-type ZnSe nanowires and their temperature-dependent charge transport properties." Journal of Materials Chemistry C 4, no. 4 (2016): 857–62. http://dx.doi.org/10.1039/c5tc02853a.

Full text

Abstract:

Simultaneous ZnSe nanowire growth and p-type doping is realized in one step by using Bi as the catalyst and dopant via chemical vapor deposition. Temperature-dependent electrical measurements are used for understanding the charge transport mechanism and the doping effect.

APA, Harvard, Vancouver, ISO, and other styles

9

Kelkar, Deepali, and Ashish Chourasia. "Structural, Thermal and Electrical Properties of Doped Poly(3,4 ethylenedioxythiophene)." Chemistry & Chemical Technology 10, no. 4 (2016): 395–400. http://dx.doi.org/10.23939/chcht10.04.395.

Full text

Abstract:

Poly(3,4-ethylenedioxythiophene) (PEDOT) was chemically synthesized, undoped and then re-doped using FeCl3 as well as camphorsulfonic acid (CSA). FT-IR results confirm the nature of the synthesized and doped samples. XRD analysis indicates crystal structure modification after doping and was also used to calculate crystallinity of samples. Crystallinity increases after FeCl3 doping, whereas it reduces due to CSA doping. TGA-DTA results show reduction in Tg value for FeCl3 doped sample while it increases for CSA doped samples compared to that of undoped PEDOT. Reduction in Tg indicates plasticiz

APA, Harvard, Vancouver, ISO, and other styles

10

Kippelen, Bernard. "Mutual electrical doping in polymers." Nature Materials 19, no. 7 (2020): 702–4. http://dx.doi.org/10.1038/s41563-020-0639-2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Euvrard, Julie, Yanfa Yan, and David B. Mitzi. "Electrical doping in halide perovskites." Nature Reviews Materials 6, no. 6 (2021): 531–49. http://dx.doi.org/10.1038/s41578-021-00286-z.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Khlayboonme, S. Tipawan, and Warawoot Thowladda. "Synthesis and Characterization of Cu-Doped SnO₂ Thin Films by Aerosol Pyrolysis Technique for Gas Sensor Application." Key Engineering Materials 766 (April 2018): 205–10. http://dx.doi.org/10.4028/www.scientific.net/kem.766.205.

Full text

Abstract:

Thin films of un-doped and Cu-doped tin oxide were synthesized on quartz substrates by the purpose-built aerosol pyrolysis apparatus from 0.2 M SnCl4.5H2O – ethanol solution. CuCl2.2H2O was used as a source of Cu dopant. The Cu dopant of 1, 3 and 5 wt.% were used for doping SnO2 film. The morphological, structural, optical and electrical properties under the influence of the Cu-doping was examined by FE-SEM, XRD, UV-Vis transmission spectroscopy and Hall effect measurement technique. XRD patterns of all films exhibited rutile-phase SnO2. The doping content of 1%Cu improved the film crystallini

APA, Harvard, Vancouver, ISO, and other styles

13

Munakata, Fumio, Takashi Kawano, Ayumi Nozaki, and H. Yamauchi. "Electrical conduction in superconductive Nd2−xCexCuO4−y at high temperatures." Journal of Materials Research 6, no. 1 (1991): 42–45. http://dx.doi.org/10.1557/jmr.1991.0042.

Full text

Abstract:

The temperature dependence of electrical resistivity of Nd2−xCexCuO4−y (x = 0.0, 0.1, 0.15, 0.18) was measured at oxygen partial pressures of 2.08 × 10−1 1.8 × 10−2, 8.1 × 10−4, and 3.3 × 10−6 atm. The oxygen-partial-pressure dependence of resistivity indicated that the charge carriers in Nd2−xCexCuO4−y were electrons. According to the resistivity data of these compounds at temperatures above 770 K, Ce doping affected the relation between the oxygen deficiency and oxygen partial pressure in Nd2CuO4−y: the doping of Ce worked to hinder the formation of oxygen vacancies in the lattice. Moreover,

APA, Harvard, Vancouver, ISO, and other styles

14

Huddleston, Lucas, and Shamus Mcnamara. "Transfer Doping in Diamond for Channel Doping and Electrical Contacts." IEEE Transactions on Electron Devices 68, no. 9 (2021): 4231–36. http://dx.doi.org/10.1109/ted.2021.3100017.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Wang, Xuejie, Hui Tian, Fei Huang, Min Luo, and De Yi Zheng. "Electrical Properties of PSZT Doped with Mn and Ce Elements." Applied Mechanics and Materials 433-435 (October 2013): 2125–28. http://dx.doi.org/10.4028/www.scientific.net/amm.433-435.2125.

Full text

Abstract:

Piezoelectric materials can convert between electric and stress and has been applied widely in industrial field. Lead strontium zirconate titanate (PSZT) ceramic, as one kind of piezoelectric material, shows good piezoelectric properties and has been used in making resonators, sensors etc. For further improving its piezoelectric properties, various elements have been doped into PSZT. In this paper, two kinds of oxides, MnO2 and CeO2, are doped into PSZT. The electrical properties of the doped PSZT samples are tested and the microstructures of samples are observed as well. Results show that, af

APA, Harvard, Vancouver, ISO, and other styles

16

He, Qing Lin, Zhan Ying Guo, Xing Hu, and Hong Zhang Song. "Influence of Cu Doping on the Thermoelectric Properties of Bi_1.5Pb_0.5Sr_1.8La_0.2Co₂O_y." Applied Mechanics and Materials 423-426 (September 2013): 593–96. http://dx.doi.org/10.4028/www.scientific.net/amm.423-426.593.

Full text

Abstract:

Cu doped Bi1.5Pb0.5Sr1.8La0.2Co2-xCuxOy(x = 0.0, 0.2, 0.4) samples were prepared through the solid state reaction method. The influence of different Cu doping contents on electrical resistivity, Seebeck coefficients, thermal conductivity, and the dimensionless figure of meritZTwas investigated. All the samples of Cu concentration 0.4 are single phases. The electrical resistivity of Bi1.5Pb0.5Sr1.8La0.2Co1.8Cu0.2Oydescends, and itsZTvalues are enhanced obviously. The results show that suitable element doping can modify the electric transport properties and enhance thermoelectric properties of m

APA, Harvard, Vancouver, ISO, and other styles

17

Karthickprabhu, S., G. Hirankumar, S. Thanikaikarasan, and P. J. Sebastian. "Structural, Thermal and Electrical Conduction Studies on LiNiPO4: RE (RE= La, Nd) Prepared by Polyol Method." Journal of New Materials for Electrochemical Systems 17, no. 3 (2014): 159–66. http://dx.doi.org/10.14447/jnmes.v17i3.416.

Full text

Abstract:

LiNiPO4 and LiNiPO4: xRE (RE = La, Nd) (x = 0.01 mol%, 0.03 mol%, 0.05 mol%, 0.07 mol%, 0.09 mol%) samples have been prepared by polyol method using 1, 2 propanediol as a polyol medium. XRD patterns have indicated that the pristine LiNiPO4 is well crystallized with orthorhombic structure pnma space group and structurally stable compound upon doping of rare earth metals. Functional group analyses have been carried out by FTIR spectroscopic analysis. TG analysis shows that no weight loss has been observed above 600°C for both Nd3+ and La3+ doped LiNiPO4. The morphology of the samples was analyze

APA, Harvard, Vancouver, ISO, and other styles

18

Kennedy, Noel, Ray Duffy, Luke Eaton, et al. "Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates." Beilstein Journal of Nanotechnology 9 (August 6, 2018): 2106–13. http://dx.doi.org/10.3762/bjnano.9.199.

Full text

Abstract:

This paper details the application of phosphorus monolayer doping of silicon on insulator substrates. There have been no previous publications dedicated to the topic of MLD on SOI, which allows for the impact of reduced substrate dimensions to be probed. The doping was done through functionalization of the substrates with chemically bound allyldiphenylphosphine dopant molecules. Following functionalization, the samples were capped and annealed to enable the diffusion of dopant atoms into the substrate and their activation. Electrical and material characterisation was carried out to determine t

APA, Harvard, Vancouver, ISO, and other styles

19

Pierpaoli, Mattia, Mateusz Ficek, Michał Rycewicz, et al. "Tailoring Electro/Optical Properties of Transparent Boron-Doped Carbon Nanowalls Grown on Quartz." Materials 12, no. 3 (2019): 547. http://dx.doi.org/10.3390/ma12030547.

Full text

Abstract:

Carbon nanowalls (CNWs) have attracted much attention for numerous applications in electrical devices because of their peculiar structural characteristics. However, it is possible to set synthesis parameters to vary the electrical and optical properties of such CNWs. In this paper, we demonstrate the direct growth of highly transparent boron-doped nanowalls (B-CNWs) on optical grade fused quartz. The effect of growth temperature and boron doping on the behavior of boron-doped carbon nanowalls grown on quartz was studied in particular. Temperature and boron inclusion doping level allow for dire

APA, Harvard, Vancouver, ISO, and other styles

20

Muhamad, Nur Amalina, and Mohamad Rusop. "Properties of I-Doped CuI Thin Films by Chemical Vapor Deposition (CVD)." Advanced Materials Research 832 (November 2013): 439–43. http://dx.doi.org/10.4028/www.scientific.net/amr.832.439.

Full text

Abstract:

In this paper, we present the properties of I-doped CuI thin films at different concentration of iodine dopant (e.g. 10mg, 20mg, 30mg, 40mg and 100mg). The doping of CuI was done by using double furnace chemical vapor deposition (CVD) method. The effects of I-doped CuI to its surface morphology and electrical were studied. The effect of iodine doping to surface morphology was measured by field emission scanning electron microscopy (FESEM). The morphology of all thin films shows insignificance changes in grain size, grain boundaries and particle structure as the doping concentration varies. For

APA, Harvard, Vancouver, ISO, and other styles

21

Piner, E. L., D. M. Keogh, J. S. Flynn, and J. M. Redwing. "AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 349–54. http://dx.doi.org/10.1557/s109257830000449x.

Full text

Abstract:

We report on the effect of strain induced polarization fields in AlGaN/GaN heterostructures due to the incorporation of Si dopant ions in the lattice. By Si-doping (Al)GaN, a contraction of the wurtzite unit cell can occur leading to strain in doped AlGaN/GaN heterostructures such as high electron mobility transistors (HEMTs). In a typical modulation doped AlGaN/GaN HEMT structure, the Si-doped AlGaN supply layer is separated from the two-dimensional electron gas channel by an undoped AlGaN spacer layer. This dopant-induced strain, which is tensile, can create an additional source of charge at

APA, Harvard, Vancouver, ISO, and other styles

22

PARK, SEONGYONG, MOON J. KIM, and OLEG LOURIE. "DIRECT TWO-DIMENSIONAL ELECTRICAL MEASUREMENT USING POINT PROBING FOR DOPING AREA IDENTIFICATION OF NANODEVICE IN TEM." Nano 05, no. 01 (2010): 61–66. http://dx.doi.org/10.1142/s1793292010001810.

Full text

Abstract:

A novel approach in two-dimensional point probe electrical measurement in TEM is proposed to identify electrical properties at specific positions. This approach calls for a sharp W probe to be driven by piezo-motors in order to make contact with TEM samples and then proceeding I–V measurements are taken and then scanned with constant bias. The doping type and p–n junction interface can be identified by rectifying I–V data obtained. By applying this method to a transistor device with a 200 nm gate length, we could qualitatively distinguish the doping area from the substrate. Mapping results wit

APA, Harvard, Vancouver, ISO, and other styles

23

Kim, Se Yun, Hyun-Sik Kim, Kyu Hyoung Lee, et al. "Influence of Pd Doping on Electrical and Thermal Properties of n-Type Cu0.008Bi2Te2.7Se0.3 Alloys." Materials 12, no. 24 (2019): 4080. http://dx.doi.org/10.3390/ma12244080.

Full text

Abstract:

Doping is known as an effective way to modify both electrical and thermal transport properties of thermoelectric alloys to enhance their energy conversion efficiency. In this project, we report the effect of Pd doping on the electrical and thermal properties of n-type Cu0.008Bi2Te2.7Se0.3 alloys. Pd doping was found to increase the electrical conductivity along with the electron carrier concentration. As a result, the effective mass and power factors also increased upon the Pd doping. While the bipolar thermal conductivity was reduced with the Pd doping due to the increased carrier concentrati

APA, Harvard, Vancouver, ISO, and other styles

24

Kim, Young-Gi, Hai-Long Nguyen, and Patrick Kinlen. "Secondary Dopants of Electrically Conducting Polyanilines." Polymers 13, no. 17 (2021): 2904. http://dx.doi.org/10.3390/polym13172904.

Full text

Abstract:

Secondary dopants and the doping methods were identified for increasing the electrical conductivity of a highly processable and a primarily doped polyaniline dinonylnaphthalene sulfonic acid (PANI-DNNSA). The secondary doping was carried out using film, solution, and vapor doping methods. The doping methods and functional groups of secondary dopants were observed to play a critical role for inducing electrical characteristics of polyaniline. When secondary film doping method and p-toluenesulfonic acid were used, the electrical conductivity of the secondary doped polyaniline was measured to be

APA, Harvard, Vancouver, ISO, and other styles

25

Tomasino, Daniela Valeria, Mario Wolf, Hermes Farina, et al. "Role of Doping Agent Degree of Sulfonation and Casting Solvent on the Electrical Conductivity and Morphology of PEDOT:SPAES Thin Films." Polymers 13, no. 4 (2021): 658. http://dx.doi.org/10.3390/polym13040658.

Full text

Abstract:

Poly(3,4-ethylenedioxythiophene) (PEDOT) plays a key role in the field of electrically conducting materials, despite its poor solubility and processability. Various molecules and polymers carrying sulfonic groups can be used to enhance PEDOT’s electrical conductivity. Among all, sulfonated polyarylether sulfone (SPAES), prepared via homogenous synthesis with controlled degree of sulfonation (DS), is a very promising PEDOT doping agent. In this work, PEDOT was synthesized via high-concentration solvent-based emulsion polymerization using 1% w/w of SPAES with different DS as dopant. It was found

APA, Harvard, Vancouver, ISO, and other styles

26

Huang, Fei, De Yi Zheng, and Min Luo. "Influence of Doping Mn or Ce on the Electrical Properties of PSZT." Advanced Materials Research 663 (February 2013): 436–40. http://dx.doi.org/10.4028/www.scientific.net/amr.663.436.

Full text

Abstract:

Lead strontium zirconate titanate (PSZT) ceramic is as one kind of piezoelectric materials can convert between stress and electric. Because of high performance, low cost of PSZT material, this kind of material are widely researched [2, 3] and used in the areas such as electrical sensors, actuators, alarm equipments etc [1]. As the more widely applications of the PSZT material, improving its piezoelectric properties becomes more important [4]. In this paper, for improving the electrical properties of PSZT material, elements manganese (Mn) or cerium (Ce) is doped into the bulk PSZT material. It

APA, Harvard, Vancouver, ISO, and other styles

27

Lee, Hye-Min, and Han-Ki Kim. "Rapidly Thermal Annealed Si-Doped In2O3 Films for Organic Photovoltaics." Journal of Nanoscience and Nanotechnology 15, no. 10 (2015): 7748–53. http://dx.doi.org/10.1166/jnn.2015.11203.

Full text

Abstract:

We report the electrical, optical, and structural properties of Si-doped In2O3 (ISO) films prepared using co-sputtering system with multi cathode guns for use in organic photovoltaics (OPVs). We investigated the effect of Si doping power on the electrical, optical, and structural properties of ISO film that was rapidly thermally annealed at a temperature of 400 °C. Due to the high Lewis acid strength (8.096) of the Si dopant, the ISO films showed high mobility and low resistivity despite the low Si doping concentration. Low resistivity of the annealed ISO films indicated that Si4+ acts as an e

APA, Harvard, Vancouver, ISO, and other styles

28

Nikolic, M. V., D. L. Sekulic, N. Nikolic та ін. "Structural and electrical properties of Ti doped α-Fe2O3". Science of Sintering 45, № 3 (2013): 281–92. http://dx.doi.org/10.2298/sos1303281n.

Full text

Abstract:

In this work we have analyzed the effects of Ti doping on structural and electrical properties of ?-Fe2O3. When the amount of added Ti (5 wt.%TiO2) was within the solubility degree and XRD, SEM and EDS analysis revealed a homogenous hematite structure, with lattice parameters a= 5.03719(3) ?, c=13.7484(1) ? slightly increased due to incorporation of Ti into the rhombohedral hematite lattice. Higher amounts of Ti (10 wt.%TiO2) resulted in the formation of pseudobrookite, besides hematite, confirmed by SEM and EDS analysis. Studies of electric properties in the temperature range 25-225oC at diff

APA, Harvard, Vancouver, ISO, and other styles

29

Goyal, D. J., Chitra Agashe, M. G. Takwale, V. G. Bhide, Shailaja Mahamuni, and S. K. Kulkarni. "Dopant induced modifications in the physical properties of sprayed ZnO:In films." Journal of Materials Research 8, no. 5 (1993): 1052–56. http://dx.doi.org/10.1557/jmr.1993.1052.

Full text

Abstract:

Indium-doped zinc oxide (IZO) films were prepared by the spray pyrolysis technique. The effect of gradual incorporation of indium cations on the structural, electrical, and compositional properties of IZO films was studied in detail. It was observed that even a small addition of indium modifies the preferred growth of IZO film from the [002] direction to the [101] direction. Such a modification in growth pattern is a result of more nucleating centers created by indium doping. Indium dopant improves the electrical properties of the films. The carrier concentration depends mainly on the indium d

APA, Harvard, Vancouver, ISO, and other styles

30

Shkir, Mohd, M. S. Al-Kotb, I. S. Yahia, T. Alshahrani, S. Alfaify, and M. M. Abutalib. "Microwave synthesis of Zn:Mn:PbI2 micro-size nanosheets and their characterizations." Materials Science-Poland 38, no. 2 (2020): 367–73. http://dx.doi.org/10.2478/msp-2020-0034.

Full text

Abstract:

AbstractHerein, we are reporting, for the first time, a microwave-assisted synthesis of lead iodide (PbI2) nanosheets (NSs) with codoping of Zn and Mn, confirmed by SEM/EDX. In the co-doping Mn concentration was kept at a constant level (i.e. 15 %) while Zn concentration was varied from 1 wt.% to 10 wt.%. The morphological analysis confirming presence of the dopant was done through SEM/EDX. The single phase and polytypic nature of NSs were established by XRD and FT-Raman examinations. Homogeneous doping of Mn and Zn in prepared PbI2 NSs was confirmed by SEM mapping analysis. The dielectric and

APA, Harvard, Vancouver, ISO, and other styles

31

Hong, Min-Hee, Wooje Han, Kyu-Yeon Lee, and Hyung-Ho Park. "The thermoelectric properties of Au nanoparticle-incorporated Al-doped mesoporous ZnO thin films." Royal Society Open Science 6, no. 5 (2019): 181799. http://dx.doi.org/10.1098/rsos.181799.

Full text

Abstract:

Mesoporous Al-doped ZnO thin films incorporated with gold nanoparticles (Au NPs) were synthesized using a sol–gel and evaporation-induced self-assembly process. In this study, the complementary effects of Au NP incorporation and Al doping on the thermoelectric properties of mesoporous ZnO thin films were analysed. The incorporated Au NPs induced an increase in electrical conductivity but a detriment in the pore arrangement of the mesoporous ZnO thin film, which was accompanied by a decrease in porosity. However, the addition of the Al dopant minimized the pore structural collapse because of th

APA, Harvard, Vancouver, ISO, and other styles

32

Caccamo, Sebastiano, and Rosaria Anna Puglisi. "Carbon-Free Solution-Based Doping for Silicon." Nanomaterials 11, no. 8 (2021): 2006. http://dx.doi.org/10.3390/nano11082006.

Full text

Abstract:

Molecular doping is a method to dope semiconductors based on the use of liquid solutions as precursors of the dopant. The molecules are deposited on the material, forming a self-ordered monolayer that conforms to the surfaces, whether they are planar or structured. So far, molecular doping has been used with precursors of organic molecules, which also release the carbon in the semiconductor. The carbon atoms, acting as traps for charge carriers, deteriorate the doping efficiency. For rapid and extensive industrial exploitation, the need for a method that removes carbon has therefore been raise

APA, Harvard, Vancouver, ISO, and other styles

33

Choi, Hyojeong, Han Soo Kim, Joon-Ho Oh, et al. "Microstructural, optical and electrical properties of Cl-doped CdTe single crystals." Materials Science-Poland 34, no. 3 (2016): 487–93. http://dx.doi.org/10.1515/msp-2016-0066.

Full text

Abstract:

AbstractMicrostructural, optical and electrical properties of Cl-doped CdTe crystals grown by the low pressure Bridgman (LPB) method were investigated for four different doping concentrations (unintentionally doped, 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3) and three different locations within the ingots (namely, samples from top, middle and bottom positions in the order of the distance from the tip of the ingot). It was shown that Cl dopant suppressed the unwanted secondary (5 1 1) crystalline orientation. Also, the average size and surface coverage of Te inclusions decreased w

APA, Harvard, Vancouver, ISO, and other styles

34

Kazakova, E. L., O. Y. Berezina, D. A. Kirienko, and N. P. Markova. "Vanadium Oxide Gel Films: Optical and Electrical Properties, Internal Electrochromism and Effect of Doping." Journal on Selected Topics in Nano Electronics and Computing 1, no. 2 (2014): 7–19. http://dx.doi.org/10.15393/j8.art.2014.3042.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Nadiyyah, Khoirotun, Anna Zakiyatul Laila, Irma Septi Ardiani, Budhi Priyanto, and Darminto. "Electrical Characterization of N- and B- Doped Amorphous Carbon Film from Palmyra Sugar." Key Engineering Materials 860 (August 2020): 196–201. http://dx.doi.org/10.4028/www.scientific.net/kem.860.196.

Full text

Abstract:

Structure of amorphous carbon can be composed of sp2 (graphite), or sp3 (diamond), or a combination of both, depending on their fractions. Therefore, many researchers were exploring to use it as solar cell material. This research used the amorphous carbon of bio-product as a basic material in the form of palmyra sugar which was synthesized through the heating and doping process to produce n-type and p-type semiconductors. This research aims to analyze the effect of dopant and deposition time on electrical properties. The heating process was carried out at 250°C and the doping process was carri

APA, Harvard, Vancouver, ISO, and other styles

36

Istrate, Anca-Ionela, Iuliana Mihalache, Cosmin Romanitan, et al. "Ca-Doped ZnO:Al Thin Films: Synthesis and Characterization." Coatings 11, no. 9 (2021): 1023. http://dx.doi.org/10.3390/coatings11091023.

Full text

Abstract:

We unveiled the effect of doping on the morpho-structural and opto/electrical properties of Ca-doped ZnO:Al thin films obtained by RF magnetron sputtering. Scanning electron microscopy (SEM) was performed to reveal the surface morphology, while the composition and crystal structure were investigated by energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The correlation between the microstructure and the electrical conductivity identifies an increase in electrical conductivity up to 145 × 10−3 Ω−1·m−1 at 5 wt.% Ca doping level with the decrease in the grain size. Furthermore

APA, Harvard, Vancouver, ISO, and other styles

37

Shi, Ya-Rui, and Yu-Fang Liu. "Theoretical study on the charge transport and metallic conducting properties in organic complexes." Physical Chemistry Chemical Physics 21, no. 24 (2019): 13304–18. http://dx.doi.org/10.1039/c9cp02170a.

Full text

Abstract:

The charge transfer process between substrate molecular and dopant always appears in doped organic semiconductors, so that molecular doping is a common method to improve the electrical properties by combining appropriate complexes of electron acceptor and donor molecules.

APA, Harvard, Vancouver, ISO, and other styles

38

KETSUWAN, PIYACHON, YONGYUT LAOSIRITAWORN, SUPON ANANTA, and RATTIKORN YIMNIRUN. "ELECTRICAL PROPERTIES OF Nb-DOPED Pb(Zr0.52Ti0.48)O3 CERAMICS." International Journal of Modern Physics B 23, no. 01 (2009): 105–11. http://dx.doi.org/10.1142/s0217979209049711.

Full text

Abstract:

The Pb ( Zr 0.52 Ti 0.48) O 3 ceramics with 0.75, 1.0, 1.25 and 1.50%wt of Nb 2 O 5 addition were prepared by a conventional mixed oxide technique. It was found that the average grain size of the ceramics decreased from 6 to 1 μm with increasing doping concentration to 1.5%wt. The room temperature dielectric constant and d33 reached maximum values of 1050 and 285 pC/N, respectively, at 1%wt Nb -doping. The electrical coercivity (Ec) of Nb -doped PZT decreased, while the polarization values increased, with increasing doping concentration. Most importantly, this study shows that Nb 2 O 5-doped P

APA, Harvard, Vancouver, ISO, and other styles

39

Ngidi, Nonjabulo P. D., Moses A. Ollengo, and Vincent O. Nyamori. "Effect of Doping Temperatures and Nitrogen Precursors on the Physicochemical, Optical, and Electrical Conductivity Properties of Nitrogen-Doped Reduced Graphene Oxide." Materials 12, no. 20 (2019): 3376. http://dx.doi.org/10.3390/ma12203376.

Full text

Abstract:

The greatest challenge in graphene-based material synthesis is achieving large surface area of high conductivity. Thus, tuning physico-electrochemical properties of these materials is of paramount importance. An even greater problem is to obtain a desired dopant configuration which allows control over device sensitivity and enhanced reproducibility. In this work, substitutional doping of graphene oxide (GO) with nitrogen atoms to induce lattice–structural modification of GO resulted in nitrogen-doped reduced graphene oxide (N-rGO). The effect of doping temperatures and various nitrogen precurs

APA, Harvard, Vancouver, ISO, and other styles

40

Tang, H., Y. J. Feng, Z. Xu, C. H. Zhang, and J. Q. Gao. "Effect of Nb doping on microstructure and electric properties of lead zirconate stannum titanate antiferroelectric ceramics." Journal of Materials Research 24, no. 5 (2009): 1642–45. http://dx.doi.org/10.1557/jmr.2009.0202.

Full text

Abstract:

The aim of this work is to study the effect of Nb element doping on the microstructure and electrical properties of lead zirconate stannum titanate (PZST) ceramic and to improve phase transition properties of PZST. Nb-doped Pb(Zr,Sn,Ti)O3 ceramic samples were prepared by the conventional mixed oxide method. Phase transitions induced by temperature, pressure, and electric field were measured with electric dielectric permittivity, hydrostatic pressure, and hysteresis. The microstructure of the samples was observed by electron scanning microscope to discuss the effect of Nb doping on PZST ceramic

APA, Harvard, Vancouver, ISO, and other styles

41

Chegel, Raad, Azra Feyzi, and Rostam Moradian. "Electrical and optical conductivities of bilayer silicene: Tight-binding calculations." International Journal of Modern Physics B 31, no. 22 (2017): 1750158. http://dx.doi.org/10.1142/s0217979217501582.

Full text

Abstract:

The electronic structures, densities of state and electrical and optical conductivities of monolayer and bilayer silicene sheets are investigated using tight-binding approximation and Green’s function method. We found that applying the electric field on doped bilayer silicene leads to band structure modification. For AA-stacked bilayer silicene, applying and increasing the bias [Formula: see text] does not create the energy gap but for AB-stacked bilayer, a small bias [Formula: see text] is enough to create an energy gap. It is shown that the electrical conductivity depends on temperature, dop

APA, Harvard, Vancouver, ISO, and other styles

42

Chai, Francis K., J. R. Brews, R. D. Schrimpf, and D. P. Birnie. "Profiling of electrical doping concentration in ferroelectrics." Journal of Applied Physics 82, no. 5 (1997): 2517–27. http://dx.doi.org/10.1063/1.365766.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Cui, Yi, Xiangfeng Duan, Jiangtao Hu, and Charles M. Lieber. "Doping and Electrical Transport in Silicon Nanowires." Journal of Physical Chemistry B 104, no. 22 (2000): 5213–16. http://dx.doi.org/10.1021/jp0009305.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Wan, Qing, Eric Dattoli, and Wei Lu. "Doping-Dependent Electrical Characteristics of SnO2 Nanowires." Small 4, no. 4 (2008): 451–54. http://dx.doi.org/10.1002/smll.200700753.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

Escala Alves, Andrey, and Herval Ramos Paes Junior. "The effect of Sn-doping on optical, electrical and morphological properties of spray-pyrolysed ZnO films." Exatas & Engenharias 10, no. 29 (2020): 1–12. http://dx.doi.org/10.25242/885x102920202034.

Full text

Abstract:

The present work has investigated the effects of tin doping on morphological and optical-electrical properties of zinc oxide films produced by spray-pyrolysis technique. The films exhibited droplet impact marks along the surface. Top-view micrographs disclosed black clusters of non-decomposed salts after tin doing. These morphological aspects have not compromised optical performance although they may have contributed to the rise in electrical resistivity due to charge scattering on the surface. Electrical conductivity was lowered as tin-doping concentration increased. Tin ions occupied interst

APA, Harvard, Vancouver, ISO, and other styles

46

Ju, Weiwei, Donghui Wang, Qingxiao Zhou, et al. "Interface dependence of electrical contact and graphene doping in graphene/XPtY (X, Y = S, Se, and Te) heterostructures." Physical Chemistry Chemical Physics 23, no. 35 (2021): 19297–307. http://dx.doi.org/10.1039/d1cp01292d.

Full text

Abstract:

The electrical contact and graphene doping are studied in Gr/XPtY (X,Y = S, Se, and Te) vdW heterostructures. The types of interfacial electrical contact and Gr doping are closely related to the interface chalcogen atoms.

APA, Harvard, Vancouver, ISO, and other styles

47

Kaphle, Amrit, Travis Reed, Allen Apblett, and Parameswar Hari. "Doping Efficiency in Cobalt-Doped ZnO Nanostructured Materials." Journal of Nanomaterials 2019 (April 24, 2019): 1–13. http://dx.doi.org/10.1155/2019/7034620.

Full text

Abstract:

Nanostructured ZnO thin films doped with cobalt from 5% to 20% were grown on glass substrates by a low-temperature chemical bath deposition (CBD) technique. We compared the doping efficiency of incorporating cobalt in ZnO nanostructured samples doped with cobalt via cobalt nitrate and cobalt chloride. The concentration of cobalt incorporated into the ZnO matrix was precisely determined using inductively coupled plasma mass spectroscopy (ICP-MS). Scanning electron microscopy (SEM) images showed that only at a 0.1 M ratio of the precursor solutions in CBD using cobalt nitrate as a dopant, the mo

APA, Harvard, Vancouver, ISO, and other styles

48

Oliveira, A. R., and M. N. P. Carreño. "In-Situ and Ion Implantation Nitrogen Doping on Near Stoichiometric a-SiC:H Films." Journal of Integrated Circuits and Systems 1, no. 2 (2004): 26–30. http://dx.doi.org/10.29292/jics.v1i2.260.

Full text

Abstract:

In this work we study the nitrogen n-type electrical doping of a-Si0.5C0.5:H films obtained by plasma enhanced chemical vapor deposition (PECVD) utilizing and comparing two doping techniques: in-situ (during the material growth) and ion implantation. The in-situ doped a-SiC:H films were obtained adding different amounts of N2 to the precursor gas mixture. For ion implantation four different nitrogen implanted concentrations were studied (between 1018 and 1021 atoms/ cm3) using multiple energies and doses to define a homogeneously doped layer. The doping experiments are carried out on a-SiC:H s

APA, Harvard, Vancouver, ISO, and other styles

49

Park, Kwan Ho, Jae Yong Jung, Jung Il Lee, Kyung Wook Jang, Whan Gi Kim, and Il Ho Kim. "Synthesis and Electronic Transport Properties of Sn-Doped CoSb₃." Materials Science Forum 658 (July 2010): 21–24. http://dx.doi.org/10.4028/www.scientific.net/msf.658.21.

Full text

Abstract:

Sn-doped CoSb3 skutterudites were prepared by encapsulated induction melting and their electronic transport properties were examined. The Sn dopant generated excess charge carriers, which increased in concentration with increasing Sn doping content. However, the carrier mobility decreased with increasing doping content, indicating a decrease in the hole mean free path by impurity scattering. The Seebeck coefficient decreased and the electrical resistivity decreased slightly with increasing the carrier concentration due to the reduced carrier mobility by impurity scattering. The lattice thermal

APA, Harvard, Vancouver, ISO, and other styles

50

Fu, Xiu Li, Hai Feng, and Zhi Jian Peng. "Effect of Pr₆O₁₁ Doping on the Microstructural and Electrical Properties of ZnO-Pr₆O₁₁-Co₃O₄-Cr₂O₃-SnO₂ Varistors." Key Engineering Materials 633 (November 2014): 308–12. http://dx.doi.org/10.4028/www.scientific.net/kem.633.308.

Full text

Abstract:

ZnO-Pr6O11-Co3O4-Cr2O3-SnO2 varistors with different doping levels of Pr6O11 (0.25-2 mol%) were prepared at 1300 °C with conventional ceramic processing, and the effect of Pr6O11 doping on the microstructure and electrical properties of the varistor materials were investigated. The results indicated that the doped Pr6O11 basically existed at the boundary of ZnO grains in the varistor ceramics, and SnO2 might enter into the lattice of ZnO grains or precipitate in reaction with Pr6O11 into Pr2Sn2O7 at the gain boundaries particularly where there were three or more ZnO grains. The analysis of sca

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!