Academic literature on the topic 'Electrical engineering|Physics|Materials science'
Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles
Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Electrical engineering|Physics|Materials science.'
Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.
You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.
Journal articles on the topic "Electrical engineering|Physics|Materials science"
Farrington, Gregory C. "Making Education in Materials Science and Engineering Attractive to Undergraduate Students." MRS Bulletin 15, no. 8 (August 1990): 23–26. http://dx.doi.org/10.1557/s0883769400058899.
Full textCarr, Stephen H. "Up Close: Northwestern University Materials Research Center." MRS Bulletin 11, no. 5 (October 1986): 36. http://dx.doi.org/10.1557/s088376940005449x.
Full textVoyles, Paul M. "The Electron Microscopy Database: an Online Resource for Teaching and Learning Quantitative Transmission Electron Microscopy." Microscopy Today 17, no. 1 (January 2009): 26–27. http://dx.doi.org/10.1017/s1551929500054973.
Full textSuhir, Ephraim. "Crossing the Lines." Mechanical Engineering 126, no. 09 (September 1, 2004): 39. http://dx.doi.org/10.1115/1.2004-sep-2.
Full textMansfield, John F. "Analysis of Interesting Materials in the Environmental SEM: You Put What in Your Microscope?" Microscopy and Microanalysis 7, S2 (August 2001): 776–77. http://dx.doi.org/10.1017/s1431927600029950.
Full textNitoi, Dan, Florin Samer, Constantin Gheorghe Opran, and Constantin Petriceanu. "Finite Element Modelling of Thermal Behaviour of Solar Cells." Materials Science Forum 957 (June 2019): 493–502. http://dx.doi.org/10.4028/www.scientific.net/msf.957.493.
Full textKim, Donghwi, Ridha Kamoua, and Andrea Pacelli. "Design-Oriented Introduction of Nanotechnology into the Electrical and Computer Engineering Curriculum." Journal of Educational Technology Systems 34, no. 2 (December 2005): 155–64. http://dx.doi.org/10.2190/d1h1-yydt-eqw8-uyju.
Full textWONG, H. S. PHILIP. "NANOELECTRONICS – OPPORTUNITIES AND CHALLENGES." International Journal of High Speed Electronics and Systems 16, no. 01 (March 2006): 83–94. http://dx.doi.org/10.1142/s0129156406003540.
Full textMahajan, S., and G. C. Berry. "Up Close: Materials Research at Carnegie Mellon." MRS Bulletin 12, no. 1 (February 1987): 27–28. http://dx.doi.org/10.1557/s088376940006872x.
Full textGronsky, R. "The Impact of Imaging Technologies in Materials Engineering." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 6–7. http://dx.doi.org/10.1017/s0424820100162491.
Full textDissertations / Theses on the topic "Electrical engineering|Physics|Materials science"
Zhou, Wang. "Beyond van der Pauw| Novel methods for four-point magnetotransport characterization." Thesis, Northwestern University, 2016. http://pqdtopen.proquest.com/#viewpdf?dispub=10160475.
Full textIn this thesis, the conventional four-point measurement technique and the van der Pauw (vdP) method are systematically investigated in the presence of non-ideal conditions, namely, non-uniform carrier density distribution and absence of ohmic contacts, which are nonetheless commonly encountered in semiconductor characterizations. Upon understanding the challenges in the conventional methods, novel characterization techniques are developed to address these challenges.
A longitudinal magnetoresistance asymmetry method was developed to study the carrier density non-uniformity in two-dimensional samples. By analyzing the asymmetric longitudinal magnetoresistance under positive and negative B-fields, an analytical model based on a linear density gradient across the sample was deduced to quantitatively describe the asymmetry. Based on the theoretical model, a practical method was described which enabled one to experimentally measure the density gradient within a single sample. The method requires only measurements of longitudinal resistances R xx and Ryy under both positive and negative B-fields, and equations have been provided to extract both the angle and the magnitude of density gradients from the measured resistances. The method was demonstrated in a GaAs quantum well wafer at cryogenic temperatures and n-GaAs bulk-doped wafer at room temperature. In both systems, the density gradient vectors extracted with our method matched well with the interpolated density gradient vectors estimated from actual density distribution maps as a base comparison set, suggesting that our method can be a universal extension of the vdP method to extract density gradients in various systems. The method also allows one to uncover the true local longitudinal resistivity ρxx at the center of the sample, which the conventional vdP method cannot describe in the presence of non-uniform densities. The ability to find ρxx makes it possible to study interesting physics in semiconductors such as interaction-induced quantum corrections to resistivity and valley filtering in multi-valley systems.
To extend the vdP method to cases where ohmic contacts are not available, a capacitive contact technique was introduced which sends current and senses voltage capacitively. A capacitive contact is formed between the buried conducting layer and the contact metal which is simply evaporated onto the sample. Systematic studies of four-point measurements with ohmic and/or capacitive contacts were conducted on a test sample and a Hall bar sample to demonstrate the effectiveness of the capacitive contact method. With a pre-defined capacitive scaling factor γ and a measurement frequency band (fL ∼ fH), it was shown that capacitive contacts could extract the same four-point resistance as ohmic contacts, establishing the validity of the capacitive contact technique.
Built on the idea of capacitive coupling with capacitive contacts, a contactless electrical characterization probe was proposed. On the probe head, there are two types of metal gates: depletion gates to define a test region and separate the contacts, and capacitive contacts to conduct four-point measurements. To characterize a piece or a region on a wafer hosting a buried conducting layer, one brings the probe onto the sample, conducts the electrical measurements with the capacitive contacts, and removes the probe. The sample remains untouched and can be reused. The contactless probe should provide a fast and nondestructive way of semiconductor characterization.
Lee, Da-Wei. "PARALLEL CRACKED ITO ON PET SUBSTRATE AND ITS APPLICATION IN FREQUENCY CONTROLLED PDLC WINDOW SHUTTER." Kent State University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=kent1427640307.
Full textMoheghi, Alireza. "LC/Polymer Composites, Scattering Properties and Application in Displays." Kent State University / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=kent1492639440067508.
Full textItapu, Srikanth. "Microstructuring of Nickel Thin Films and Property Modification of Nickel Oxide Films by Pulsed Laser Irradiation." University of Toledo / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1501701523725736.
Full textHerring, Patrick Kenichi. "Low Dimensional Carbon Electronics." Thesis, Harvard University, 2014. http://dissertations.umi.com/gsas.harvard:11475.
Full textPhysics
Zhou, You. "Correlated Oxides: Material Physics and Devices." Thesis, Harvard University, 2015. http://nrs.harvard.edu/urn-3:HUL.InstRepos:17464472.
Full textEngineering and Applied Sciences - Applied Physics
Incorvia, Jean Anne Currivan. "Nanoscale Magnetic Materials for Energy-Efficient Spin Based Transistors." Thesis, Harvard University, 2015. http://nrs.harvard.edu/urn-3:HUL.InstRepos:17467318.
Full textPhysics
Muckley, Eric S. "Optimization of film morphology for the performance of organic thin film solar cells." Thesis, California State University, Long Beach, 2013. http://pqdtopen.proquest.com/#viewpdf?dispub=1523341.
Full textThe power conversion efficiency of organic thin film solar cells must be improved before they can become commercially competitive alternatives to silicon-based photovoltaics. Exciton diffusion and charge carrier migration in organic films are strongly influenced by film morphology, which can be controlled by the substrate temperature during film growth. Zinc-phthalocyaninelbuckminsterfullerene bilayer film devices are fabricated with substrate temperatures between 25°C and 224°C and their solar cell performance is investigated here. The device open-circuit voltage, efficiency, and fill factor all exhibit peaks when films are grown at temperatures between 160°C and 180°C, which is likely a result of both the increase in shunt resistance and reduction in undesirable back diode effects which occur between l00°C and 180°C. The device performance can also be attributed to changes in the film crystallite size, roughness, and abundance of pinholes, as well as the occurrence of crystalline phase transitions which occur in both zinc-phthalocyanine and buckminsterfullerene between 150°C and 200°C. The unusually high open-circuit voltage (1.2 V), low short-circuit current density (0.03 mA/cm2), and low device efficiency (0.04%) reported here are reminiscent of single layer phthalocyanine-based Schottky solar cells, which suggests that pinholes in bilayer film devices can effectively lead to the formation of Schottky diodes.
Sivananthan, Abirami. "Integrated Linewidth Reduction of Rapidly Tunable Semiconductor Lasers." Thesis, University of California, Santa Barbara, 2014. http://pqdtopen.proquest.com/#viewpdf?dispub=3602218.
Full textWidely tunable lasers with fast tuning speeds have applications in dense wavelength division multiplexing (DWDM), optical sensing and optical packet switching. In DWDM, tunable lasers can greatly reduce inventory costs, increase manufacturing efficiency, and increase flexibility. For this application, tunable lasers must meet stringent requirements in terms of linewidth, SMSR, RIN, etc. As coherent detection moves to higher modulation formats to increase spectral efficiency, linewidths on the order of 100 kHz will be required. In FMCW LIDAR, the sensing range is directly coupled to the coherence length, i.e. linewidth, of the laser, and the resolution is determined by the tuning range of the laser. A laser with a 40 nm tuning range and 100 kHz linewidth can lead to a LIDAR system with 30 µm of resolution at a 1.5 km range. The above motivations demonstrate the need for a laser that is widely tunable, with tuning speeds in the nanosecond regime, a 100 kHz linewidth and small form factor. Many different approaches have been taken to achieve a low linewidth laser, generally with the trade-off of slower tuning speeds or larger size. Typically, the widely tunable mirrors used to create a highly agile laser are noisy. In our approach we use negative feedback along with an InGaAsP/InP photonic integrated circuit (PIC) to reduce the linewidth of a widely tunable SG-DBR laser. The SG-DBR laser has a 40 nm tuning range, ns tuning speeds and is 1.5 mm long. Typically the linewidth is in the MHz range due to carrier induced frequency fluctuations. We use an asymmetric Mach Zehnder integrated on the same PIC to monitor and convert the laser frequency fluctuations to amplitude fluctuations. This error signal is fed back through a stabilizing loop filter to the phase tuning section of the SG-DBR laser to reduce the laser linewidth. Through integration of all the optical components, the loop delay is minimized and loop bandwidths upwards of 600 MHz have been achieved. Using this technique, we demonstrate an SG-DBR laser with the linewidth suppressed from 19 MHz to 150 kHz, which is the lowest linewidth yet for an SG-DBR laser.
Ohtsuki, Tomoko 1960. "Rare-earth-doped glass waveguides for amplifiers and lasers." Diss., The University of Arizona, 1996. http://hdl.handle.net/10150/282169.
Full textBooks on the topic "Electrical engineering|Physics|Materials science"
Chen, An-Ban. Semiconductor alloys: Physics and materials engineering. New York: Plenum Press, 1995.
Find full textservice), SpringerLink (Online, ed. Advanced Batteries: Materials Science Aspects. Boston, MA: Springer US, 2009.
Find full textGross, Dietmar. Engineering Mechanics 1: Statics. 2nd ed. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013.
Find full textMagnetic materials: Fundamentals and applications. 2nd ed. Cambridge: Cambridge University Press, 2011.
Find full textH, Lüth, ed. Solid-state physics: An introduction to principles of materials science. 3rd ed. Berlin: Springer, 2003.
Find full textIbach, H. Solid-state physics: An introduction to principles of materials science. 2nd ed. Berlin: Springer-Verlag, 1995.
Find full textIbach, H. Solid-state physics: An introduction to principles of materials science. 2nd ed. Berlin: Springer, 1996.
Find full textservice), SpringerLink (Online, ed. Electronic Properties of Materials. 4th ed. New York, NY: Springer Science+Business Media, LLC, 2011.
Find full textShinde, Kartik N. Phosphate Phosphors for Solid-State Lighting. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012.
Find full textPeled, A. Photo-excited processes, diagnostics, and applications: Fundamentals and advanced topics. Boston: Kluwer Academic Publishers, 2003.
Find full textBook chapters on the topic "Electrical engineering|Physics|Materials science"
Rubin, Yoram. "Introduction." In Applied Stochastic Hydrogeology. Oxford University Press, 2003. http://dx.doi.org/10.1093/oso/9780195138047.003.0006.
Full textChakraborty, Debapriya, Jeetendra Singh, and Shashi Bala. "Brace of Nanowire FETs in the Advancements and Miniaturizations of Recent Integrated Circuits Design." In Advances in Computer and Electrical Engineering, 139–70. IGI Global, 2021. http://dx.doi.org/10.4018/978-1-7998-6467-7.ch007.
Full textConference papers on the topic "Electrical engineering|Physics|Materials science"
Cieslinski, Benjamin, Mohamed Gharib, Brady Creel, and Tala Katbeh. "A Model Science-Based Learning STEM Program." In ASME 2019 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/imece2019-10352.
Full textNarayanamurti, V. "Frontiers in Nanoscience and Technology in the 21st Century and New Models for Research and Education at the Intersection of Basic Research and Technology." In ASME 4th International Conference on Nanochannels, Microchannels, and Minichannels. ASMEDC, 2006. http://dx.doi.org/10.1115/icnmm2006-96012.
Full text