Relevant bibliographies by topics / Electrical measurements C-V and G-V

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Electrical measurements C-V and G-V'

Author: Grafiati
Published: 13 July 2024
Last updated: 31 July 2025

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Journal articles on the topic "Electrical measurements C-V and G-V"

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Özden, Şadan, Ömer Güllü, and Osman Pakma. "Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices." European Physical Journal Applied Physics 82, no. 2 (2018): 20101. http://dx.doi.org/10.1051/epjap/2018180004.

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The room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I–V and C–V measurements. It has been determined that the device has a high rectification coefficient and current transport is dominated by the thermionic emission. The serial resistance value is calculated at 92 ohms with two different approaches. Serial resistance effects were also found to be effective in C–V and G–V measurements. The different barrier heights from the I–V and C–V measurements indicate possible interface and trap states or barrier inhom
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Padma, R., and V. Rajagopal Reddy. "Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode." Физика и техника полупроводников 51, no. 12 (2017): 1698. http://dx.doi.org/10.21883/ftp.2017.12.45189.8340.

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The electrical properties of the Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f) and conductance-frequency (G-f) measurements. The obtained mean barrier height and ideality factor from I-V are 0.61 eV and 1.89. The built-in potential, doping concentration and barrier height values are also estimated from the C-V measurements and the corresponding values are 0.62 V, 1.20x1017 cm-3 and 0.79 eV, respectively. The interface state density (NSS) obtained from forward bias I-V characteristics by considering the
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Faraz, Sadia Muniza, Wakeel Shah, Naveed Ul Hassan Alvi, Omer Nur, and Qamar Ul Wahab. "Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode." Advances in Condensed Matter Physics 2020 (April 13, 2020): 1–9. http://dx.doi.org/10.1155/2020/6410573.

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The electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method. The SEM image revealed high density, vertically aligned hexagonal ZnO nanorods with an average height of about 1.2 μm. Electrical characterization of n-ZnO nanorods/p-Si heterojunction diode was done by current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G-V) measurements at room temperature. The heterojunction exhibited good electrical characteristics with dio
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Altındal, Şemsettin, Ali Barkhordari, Gholamreza Pirgholi-Givi, et al. "Comparison of the electrical and impedance properties of Au/(ZnOMn:PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation." Physica Scripta 96, no. 12 (2021): 125881. http://dx.doi.org/10.1088/1402-4896/ac43d7.

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Abstract The effect of 60Co-iradiation) on the electrical parameters in the Au/(ZnOMn:PVP)/n-Si SDs have been investigated using the current-voltage (I–V) and capacitance/conductance-voltage (C/G–V) measurements. Firstly, the values of reverse-saturation-current (Io), ideality-factor (n), barrier-height (BH), shunt/series resistances (Rsh, Rs), and rectifying-rate (RR) were extracted from the I–V data before and after gamma-irradiation (5 and 60 kGy) using thermionic-emission (TE), Norde, and Cheung methods. The surface-states (Nss) versus energy (Ec–Ess) profile was extracted from I–V data co
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Padovani, Andrea, Ben Kaczer, Milan Pesic, et al. "A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From ${I}$ – ${V}$ , ${C}$ – ${V}$ , and ${G}$ – ${V}$ Measurements." IEEE Transactions on Electron Devices 66, no. 4 (2019): 1892–98. http://dx.doi.org/10.1109/ted.2019.2900030.

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Koliakoudakis, C., J. Dontas, S. Karakalos, et al. "Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC." Materials Science Forum 615-617 (March 2009): 651–54. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.651.

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The behavior of 200nm Cr Schottky contacts on n-type 4H-SiC has been investigated with photoelectron spectroscopy (XPS) and standard (I-V and C-V) electrical measurements at different measurement temperatures. A barrier height close to 1.2 eV was calculated from XPS data under no-current and no-bias conditions on ultra-thin Cr films grown in-situ under UHV conditions. The I-V measurements on as-deposited contacts resulted in a barrier height of 1.06 eV while a value of 1.2 eV has been extracted from the C-V measurements.
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Pananakakis, G., and G. Kamarinos. "Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements." Surface Science Letters 168, no. 1-3 (1986): A137. http://dx.doi.org/10.1016/0167-2584(86)90487-1.

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Pananakakis, G., and G. Kamarinos. "Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements." Surface Science 168, no. 1-3 (1986): 657–64. http://dx.doi.org/10.1016/0039-6028(86)90897-6.

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Afandiyeva, İ. M., İ. Dökme, Ş. Altındal, L. K. Abdullayeva та Sh G. Askerov. "The frequency and voltage dependent electrical characteristics of Al–TiW–Pd2Si/n-Si structure using I–V, C–V and G/ω–V measurements". Microelectronic Engineering 85, № 2 (2008): 365–70. http://dx.doi.org/10.1016/j.mee.2007.07.010.

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Giannazzo, Filippo, Stefan Hertel, Andreas Albert, et al. "Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts." Materials Science Forum 778-780 (February 2014): 1142–45. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1142.

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Epitaxial graphene fabricated by thermal decomposition of the Si-face of silicon carbide (SiC) forms a defined interface to the SiC substrate. As-grown monolayer graphene with buffer layer establishes an ohmic interface even to low-doped (e. g. [N] ≈ 1015 cm-3) SiC, and a specific contact resistance as low as ρC = 5.9×10-6 Ωcm2 can be achieved on highly n-doped SiC layers. After hydrogen intercalation of monolayer graphene, the so-called quasi-freestanding graphene forms a Schottky contact to n-type SiC with a Schottky barrier height of 1.5 eV as determined from C-V analysis and core level pho
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Dissertations / Theses on the topic "Electrical measurements C-V and G-V"

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Mohamad, Blend. "Electrical characterization of fully depleted SOI devices based on C-V measurements." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAT001/document.

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Les technologies de films minces sur isolant apparaissent comme des solutions fiables pour la nano électronique. Elles permettent de dépasser les limites des technologies sur substrat silicium massif, en autorisant de faibles tensions d’utilisation et un gain en énergie significatif. En effet, les transistors à semi-conducteurs à grille métallique (MOSFET) avec un substrat totalement déplété (FDSOI) conduisent à des courants de fuites faible et améliorent la variabilité ce qui permet de diminuer les tensions d’alimentation en particulier pour les applications SRAM. A partir du nœud 14 nm, les
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Beji, Hiba. "Étude de la nitruration de surface de silicium par plasma N2 et de son impact sur l'interface avec une couche antireflet de type SiN(O)." Electronic Thesis or Diss., Université Clermont Auvergne (2021-...), 2024. http://www.theses.fr/2024UCFA0037.

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Dans le domaine photovoltaïque, les performances des cellules solaires sont impactées par deux problématiques majeures : les pertes par réflexion et les pertes par recombinaisons. Le premier objectif de ce travail est de diminuer la réflexion de la lumière à la surface du silicium en utilisant une couche antireflet de nitrure de silicium. Cette dernière est réalisée par pulvérisation cathodique magnétron en utilisant des gaz non toxiques (Ar, N2). Le deuxième objectif de cette étude est la passivation des centres de recombinaison au niveau de l'interface couche antireflet/silicium. Pour cela,
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Dřímalková, Lucie. "Elektrické charakteristiky diafragmového výboje v roztocích elektrolytů." Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2011. http://www.nusl.cz/ntk/nusl-216707.

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The main object of this thesis is the diagnostics of the diaphragm discharge generated in water solutions containing supporting electrolytes (mostly NaCl), and description of particular processes before and after discharge breakdown by DC non-pulsed voltage up to 2 kV. Although many applications of electric discharge in liquids have been developed during the last years, the exact mechanism of the discharge ignition is not sufficiently known up to now. Based on this reason, this work is focused on the investigation of processes before the discharge ignition, breakdown parameters and the dischar
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Haratek, Jiří. "Výpočet rozložení teplotního pole v elektrickém stroji." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2017. http://www.nusl.cz/ntk/nusl-318865.

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This diploma thesis deals with methods used to determine the temperature field distribution within an electric machine. The first part is focused on methods of temperature measurement, generation and transfer of the thermal energy within the electric machine, asynchronous motor in particular. The thesis describes classical methods of temperature measurement and it also deals with ANSYS Workbench finite element method for thermal analysis of the motor. The final part of the thesis is focused on a comparation of all discussed methods with respect to results of thermal test for real asynchronous
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Horák, Luděk. "Analýza elektrických vlastností epoxidových pryskyřic s různými plnivy v teplotní a kmitočtové závislosti." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2018. http://www.nusl.cz/ntk/nusl-376991.

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Presented master's thesis is focused on studying electroinsulating epoxy resin-based sealings. It describes the chemical composition, production, properties and measuring methods of basic electric quantities of these materials. The aim of the thesis is to compare several sets of samples of composite epoxy resins with different kinds of micro-ground siliceous sand as a filling. The temperature and frequency dependence of relative permittivity, dissipation factor and inner resistivity are measured for given samples.
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Mittner, Ondřej. "Určování velikosti plochy a rozměrů vybraných objektů v obraze." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2010. http://www.nusl.cz/ntk/nusl-218637.

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The master’s thesis describes hardware opto-electronic instruments for contactless measurement of surfaces. It concentrates on instruments used for opto-electrical transformation of a taking scene and software processing of digital pictures. It presents selected methods of pre-processing, segmenting and following final modifications of these pictures. Then it deals with measuring of areas of surfaces and sizes of selected objects in these pictures and conversion of results from pixels to SI system of units. Possible divergences of measuring are described as well. A flow chart of a program for
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Kolacia, Tomáš. "Měření elektrických veličin v distribučních sítích 22 kV a 0,4 kV s disperzními zdroji." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2015. http://www.nusl.cz/ntk/nusl-221196.

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This thesis concerns monitoring in Middle- and Low-Voltage distribution systems penetrated by distributed generation. Monitoring itself means measuring voltages and power flows and sending relevant data to the supervisory system. The first part of the thesis describes distribution systems with differences between individual voltage levels. The following chapter is focused on consequences of high share of renewable energy sources in distribution systems. Most of the problems are partially resolved by technical conditions for connection of the new power sources. However, difficulties with voltag
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Spradlin, Joshua K. "A Study on the Nature of Anomalous Current Conduction in Gallium Nitride." VCU Scholars Compass, 2005. http://scholarscompass.vcu.edu/etd/709.

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Current leakage in GaN thin films limits reliable device fabrication. A variety of Ga and N rich MBE GaN thin films grown by Rf, NH3, and Rf+ NH3, are examined with electrical measurements on NiIAu Schottky diodes and CAFM. Current-voltage (IV) mechanisms will identify conduction mechanisms on diodes, and CAFM measurements will investigate the microstructure of conduction in GaN thin films. With CAFM, enhanced conduction has been shown to decorate some extended defects and surface features, while CAFM spectroscopy on a MODFET structure indicates a correlation between extended defects and field
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Halfar, Lukáš. "Automatizované měření asynchronního motoru pomocí LabVIEW." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2016. http://www.nusl.cz/ntk/nusl-242151.

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The main purpose of the thesis Automatic measurement of induction machine using LabVIEW was to develope an automated measuring system, which is used to perform tests of induction motors. The algorithm of the system is programmed in LabVIEW. In the practical part of this thesis, a measurement of the motor Atas Elektromotory Náchod a.s. T22VT512 is carried out, in order to verificate functions of the algorithm, and to perform tests of the motor to analyse losses. Another part of the work is dedicated to the electromagnetic calculation of the motor T22VT512. For this purpose, two softwares with d
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Dřímalková, Lucie. "Diagnostika diafragmového výboje ve vodných roztocích a jeho aplikace pro povrchovou úpravu nanomateriálů." Doctoral thesis, Vysoké učení technické v Brně. Fakulta chemická, 2019. http://www.nusl.cz/ntk/nusl-402110.

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The exact mechanism of the discharge in liquids ignition is not sufficiently known up to now. Although during the last years was achieved the great progress and overloading which some of them are written in this theoretical part of thesis. This thesis is divided into two experimental parts. When the first part deals with diagnostics of diaphragm discharge in electrolyte solutions and the second part is focused on its use for uncoiling (higher homogenization) of carbon nanotubes in solutions. In experiment 1, three different sized (4 l, 100 ml, 50 ml) diaphragm discharge configurations were use
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Books on the topic "Electrical measurements C-V and G-V"

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Mezent͡sev, A. N. (Andreĭ Nikolaevich), ed. Ėlektrorazvedka v poli͡arizui͡ushchikhsi͡a sredakh. UrO AN SSSR, 1989.

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Zimin, E. F. Izmerenie parametrov ėlektricheskikh i magnitnykh poleĭ v provodi͡a︡shchikh sredakh. Ėnergoatomizdat, 1985.

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Nauchno-prakticheskai︠a︡ konferent︠s︡ii︠a︡ Metrologii︠a︡ ėlektricheskikh izmereniĭ v ėlektroėnergetike (10th 2007 Moscow, Russia). Metrologii︠a︡ ėlektricheskikh izmereniĭ v ėlektroėnergetike: Doklady seminara, normativno-pravovai︠a︡ baza metrologii, informat︠s︡ii︠a︡ o kompanii︠a︡kh. DialogĖlektro, 2007.

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Segalʹ, A. M. Poverkhnostnyĭ ėffekt v tokoprovodakh i ėlementakh ėlektricheskikh apparatov. Ėnergoatomizdat, Sankt-Peterburgskoe otd-nie, 1992.

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Protasevich, E. T. Novye i︠a︡vlenii︠a︡ v fizike gazovogo razri︠a︡da i radiofizike. Izd-vo Tomsk. politekhn. universiteta, 2002.

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University, Tomsk Polytechnic, ed. Novye i︠a︡vlenii︠a︡ v fizike gazovogo razri︠a︡da i radiofizike. Izd-vo Tomsk. politekhn. universiteta, 2002.

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Sobolev, Valentin Viktorovich. Metody vychislitelʹnoĭ fiziki v teorii tverdogo tela: Ėlektronnai͡a︡ struktura poluprovodnikov. Nauk. dumka, 1988.

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Sobolev, Valentin Viktorovich. Metody vychislitelʹnoĭ fiziki v teorii tverdogo tela: Ėlektronnai͡a︡ struktura dikhalʹkogenidov redkikh metallov. Nauk. dumka, 1990.

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VLSI and Post-CMOS Electronics: Devices, Circuits and Interconnects. Institution of Engineering & Technology, 2019.

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Dhiman, Rohit, and Rajeevan Chandel. VLSI and Post-CMOS Electronics: Devices, Circuits and Interconnects, Volume 2. Institution of Engineering & Technology, 2019.

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Book chapters on the topic "Electrical measurements C-V and G-V"

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Azarov, Alexander, Anders Hallén, and Henry H. Radamson. "Electrical Characterization of Semiconductors: I–V, C–V and Hall Measurements." In Analytical Methods and Instruments for Micro- and Nanomaterials. Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-26434-4_7.

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Davies, Richard J., Mary K. Brumfield, and Maribeth Pierce. "Noninvasive Measurement of the Electrical Properties of Breast Epithelium During the Menstrual Cycle: A Potential Biomarker for Breast Cancer Risk." In Hormonal Carcinogenesis V. Springer New York, 2008. http://dx.doi.org/10.1007/978-0-387-69080-3_27.

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Ren, Bingyan, Bei Guo, Yan Zhang, Bing Zhang, Hongyuan Li, and Xudong Li. "Electrical Characterization and Measurements of Sin Thin Films On Crystalline Silicon Substrates By Pecvd." In Proceedings of ISES World Congress 2007 (Vol. I – Vol. V). Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-75997-3_231.

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Srivastava, Ajay Kumar. "Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL." In Si Detectors and Characterization for HEP and Photon Science Experiment. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-19531-1_10.

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Piotto, M., A. N. Longhitano, P. Bruschi, M. Buiat, G. Sacchi, and D. Stanzial. "Design and Fabrication of a Compact p–v Probe for Acoustic Impedance Measurement." In Lecture Notes in Electrical Engineering. Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00684-0_10.

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Wang, Jun, Hua Zhang, and Zhulong Yan. "Research and Analysis of the Green Vision Rate of Street Space Based on Information Visualization Technology." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2025. https://doi.org/10.1007/978-981-96-2409-6_26.

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Abstract Taking the research results of China National Knowledge Network (CNKI) from 1998 to 2023 as the data source, with the help of CiteSpace V and VOSviewer digital technology, the knowledge map on the research of China street space is drawn. The visualization technology shows the structure, evolution of street space, and the interrelationship of green vision rate research, and intuitively shows the research hotspot and frontier dynamics of green vision rate of street space in China. Research has learned that before 2017, the green vision rate of street space was in the bud, and then began
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Watcharinporn, Orrathai, Surachai Dechkunakorn, Niwat Anuwongnukroh, et al. "Assessment of the Accuracy and Reliability of Cephsmile v.2 in Cephalograms and Model Measurements." In Lecture Notes in Electrical Engineering. Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-27323-0_52.

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Ghivela, Girish Chandra, Prince Kumar, and Joydeep Sengupta. "Numerical Measurement of Oscillating Parameters of IMPATT Using Group IV and Group III–V Materials." In Lecture Notes in Electrical Engineering. Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-32-9775-3_37.

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Stanzial, D., M. Buiat, G. Sacchi, P. Bruschi, and M. Piotto. "Functional Comparison of Acoustic Admittance Measurements with a CMOS-Compatible p–v Microprobe and a Reference One." In Lecture Notes in Electrical Engineering. Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00684-0_11.

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Onnes, H. Kamerlingh. "Further Experiments with Liquid Helium. D. On the Change of the Electrical Resistance of Pure Metals at very low Temperatures, etc. V. The Disappearance of the resistance of mercury." In Through Measurement to Knowledge. Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-009-2079-8_16.

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Conference papers on the topic "Electrical measurements C-V and G-V"

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Brenna, Andrea, Luciano Lazzari, and Marco Ormellese. "Effects of Intermittent DC Stray Current on Carbon Steel under Cathodic Protection." In CORROSION 2015. NACE International, 2015. https://doi.org/10.5006/c2015-05721.

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Abstract Stray currents originating from DC electrical systems may cause severe corrosion damage of buried metal structures, as carbon steel pipes, tanks or vessels. Nowadays, international standards establish the general principles to control DC interference, mainly based on potential and voltage gradients measurements over a 24 h period. As regards carbon steel under cathodic protection condition, anodic DC interference is considered unacceptable if the IR-free potential is more positive than the protection potential provided by standard (-0.850 V CSE in aerobic condition). But, duration and
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Tominaga, Yoriko, Fumitaro Ishikawa, Noriaki Ikenaga, and Osamu Ueda. "Low-temperature-grown dilute bismide III-V compound semiconductors towards fabrication of photoconductive antenna for terahertz-wave emission and detection." In JSAP-Optica Joint Symposia. Optica Publishing Group, 2024. https://doi.org/10.1364/jsapo.2024.18p_b2_10.

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Towards the 6th generation mobile communications system (6G), it is considered to expand a frequency band higher than that for 5G, 95 GHz–3 THz, and electromagnetic waves up to approximately 300 GHz are under consideration[1]. Therefore, developing and realizing devices that can operate in these frequency bands is an urgent issue. It is essential to elucidate the dielectric, magnetic, and electrical properties of semiconductors and other electronic materials, which constitute the development and manufacturing processes, in these frequency bands. It is said that 6G will be in operation in 2030,
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Liang, Yi, Yanxia Du, Xun Yuan, and Le Chen. "Case Study of AC-Induced Corrosion on Buried Pipeline: Field Test and Mitigation Design." In CORROSION 2021. AMPP, 2021. https://doi.org/10.5006/c2021-16374.

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ABSTRACT In this paper, a case study on AC interference measurement and mitigation was introduced. A buried pipeline was running in parallel with 500 kV high-voltage alternating current (HVAC) transmission line for about 10 km. The distance between them was about 25~600 m. Field test showed that the maximum AC voltage was 44.3 V and AC current density was 1248 A/m2 at cathodic protection (CP) polarized potential of -0.90 VCSE ~ -0.95 VCSE. Overall, these results indicated that the buried pipeline suffered serious AC interference. Therefore, corrosion coupons were buried and electrically connec
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Acevedo, Paola Daza, Guy Dos Santos, Antoine Lefebvre, and Sylvain Fontaine. "Level Reduction of Induced AC Interferences on a Gas Pipeline by Permutation of «phases» of the HVAC Power Line." In CONFERENCE 2025. AMPP, 2025. https://doi.org/10.5006/c2025-00381.

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High Voltages (HV) power lines can generate an induced alternating voltage (AC) on nearby gas pipelines. In the ongoing operation of HV power lines, consideration must be given to the risk to the safety of persons and the risk of corrosion that may affect the integrity of the pipeline. It is necessary to carry out studies of reduction of these interferences. When a risk of AC interference on a pipeline has been identified by the proximity of an HV power line, the installation of earthing systems is often the solution. In the documentation, permutation phase is one of the most effective techniq
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Hauser, J. R., and K. Ahmed. "Characterization of ultra-thin oxides using electrical C-V and I-V measurements." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY. ASCE, 1998. http://dx.doi.org/10.1063/1.56801.

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Richardson, W. H., and Y. Yamamoto. "Quantum Correlation Between the Junction Voltage Fluctuation and the Photon Number Fluctuation in a Semiconductor Laser." In OSA Annual Meeting. Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.pdp15.

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Quantum correlation between two observables are of fundamental importance in the measurement of quantum mechanical systems. We introduce here a new type of quantum correlation, that between the junction voltage fluctuation v ^ n and the external field amplitude fluctuation Δ r ^ , in a semiconductor laser. A measure of the correlation, which originates in the dipole interaction between the internal field and the electron-hole system, is given by C v r = 〈 ( v ^ n Δ r ^ † ) s y m 〉 / ( 〈 v ^ n 2 〉 〈 Δ r ^ 2 〉 ) 1 / 2 . At the pump rate required to produce a beam at the standard quantum limit (S
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7

Lai, LiLung, Nan Li, Qi Zhang, Tim Bao, and Robert Newton. "Nanoprobing Applications with Capacitance-Voltage and Pulsed Current-Voltage Measurements for Device Failure Analysis." In ISTFA 2015. ASM International, 2015. http://dx.doi.org/10.31399/asm.cp.istfa2015p0401.

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Abstract Owing to the advancing progress of electrical measurements using SEM (Scanning Electron Microscope) or AFM (Atomic Force Microscope) based nanoprober systems on nanoscale devices in the modern semiconductor laboratory, we already have the capability to apply DC sweep for quasi-static I-V (Current-Voltage), high speed pulsing waveform for the dynamic I-V, and AC imposed for C-V (Capacitance-Voltage) analysis to the MOS devices. The available frequency is up to 100MHz at the current techniques. The specification of pulsed falling/rising time is around 10-1ns and the measurable capacitan
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8

Iyer, D., A. Messinger, R. Crowder, et al. "Measurement of Dielectric Constant and Doping Concentration of a Cross-Sectioned Device by Quantitative Scanning Microwave Impedance Microscopy." In ISTFA 2017. ASM International, 2017. http://dx.doi.org/10.31399/asm.cp.istfa2017p0613.

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Abstract Scanning microwave impedance microscopy (sMIM) is an emerging technique that can provide detailed information beyond that of conventional scanning capacitance microscopy (SCM), and other electrical scanning probe microscopy (SPM) techniques, for the investigation and failure analysis (FA) of semiconductor devices. Integration of new dielectric materials at lower levels of the device structure with the need for quantification of dielectric and dopants in semiconductor devices with sub-micron spatial resolution pushes the practical boundaries of typical atomic force microscopy (AFM) ele
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Baviere, R., and F. Ayela. "First Local Pressure Drops Measurements in Microchannels With Integrated Micromachined Strain Gauges." In ASME 2004 2nd International Conference on Microchannels and Minichannels. ASMEDC, 2004. http://dx.doi.org/10.1115/icmm2004-2406.

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The knowledge of the fundamental aspects of hydrodynamics at microscales is an exciting challenge. Some authors have published conflicting results concerning the friction and the thermal exchange coefficients, the transition to a turbulent flow regime (Qu et al. 2000, Mala and Di 1999, Papautsky et al. 1999). Some explanations, based on surface effects, have been proposed, but microeffects, if they are, are probably hidden by experimental artefacts. We aim at performing local measurements of pressure drops in monophasic microstreams. Precedent works (Baviere et al. 2003) have shown that a grea
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Croitoru, N., M. Zafrir, S. Amirhaghi, and Z. Harzion. "Schottky-type photovoltaic junctions with transparent conductor films." In OSA Annual Meeting. Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fr6.

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Junctions between transparent conductor (ITO) and single-crystal silicon or polycrystalline silicon (poly-Si) were prepared. Electrical I–V and C-V, as well as photovoltage decay (PVD) measurements, were performed. Data of open circuit voltage (Voc), short circuit current (Isc), fill factor (FF), efficiency (η), built-in potential (ϕ- bl ), and lifetime were obtained. It was found that the lifetime of photogenerated carriers in the poly-Si/ITO junction is much shorter than in single crystal. There are two types of recombination center that have an essential influence on the efficiency of the s
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