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Dissertations / Theses on the topic 'Electrical properties of porous silicon'

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Published: 4 June 2021

Last updated: 1 February 2022

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1

UÌˆnal, Bayram. "Optical, electrical and structural properties of nanostructured silicon and silicon-germanium alloys." Thesis, De Montfort University, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.391480.

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2

Green, Stephen. "Effect of oxygen and hydrogen on the optical and electrical characteristics of porous silicon : towards sensor applications." Thesis, London South Bank University, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.299908.

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3

Menard, Samuel. "Périphérie triac à base de silicum poreux." Thesis, Tours, 2014. http://www.theses.fr/2014TOUR4022/document.

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Ces travaux de thèse portent sur le développement d’une périphérie innovante de TRIAC exploitant le caractère semiisolant du silicium poreux (PS). L’intégration de caissons PS type P à partir des profils de dopage du TRIAC est en effet accessible. Une revue des propriétés électriques du PS type P réalisée à partir de nos propres échantillons méso voire micro-poreux a donc été entreprise. Des mesures de capacités et des relevés I-V ont ainsi permis de déterminer l’évolution de la constante diélectrique relative du PS ainsi que sa résistivité en fonction de la porosité. Plus cette dernière est é

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4

Toquet, Fabien. "Study of the combined roles of the Silica/Oil/UHMWPE formulation and process parameters on morphological and electrical properties of battery Separators." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSE1014/document.

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Ce travail s'est concentré sur la compréhension de l'influence de la formulation et plus spécifiquement de la silice précipitée sur la résistivité électrique de séparateurs en polyéthylène destinés à des batteries au plomb. Les séparateurs de batteries en polyéthylène sont composés de silice précipitée, de polyéthylène ultra haute masse molaire (UHMWPE) et d'huile organique. La première partie de ce travail a été d'élaborer à l'échelle du laboratoire, des membranes modèles en polyéthylène. La seconde a été de comprendre l'influence de certains facteurs sur les propriétés structurales et physic

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5

Chang, Wai-Kit. "Porous silicon surface passivation and optical properties." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/41426.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1996.<br>"June 1996."<br>Includes bibliographical references (leaves 84-85).<br>by Wai-Kit Chang.<br>S.M.

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6

Tsuboi, Takashi. "Structure and Properties of Porous Silicon Surface." Kyoto University, 1999. http://hdl.handle.net/2433/181681.

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7

Ngan, Mei Lun. "Photoluminescence excitation of porous silicon." HKBU Institutional Repository, 1998. http://repository.hkbu.edu.hk/etd_ra/139.

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8

Andrews, Gordon Todd. "Elastic and structural properties of supported porous silicon layers." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape9/PQDD_0004/NQ42470.pdf.

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9

Riley, David Washington. "Porous silicon thin films : a study of their optical properties and growth mechanism." Thesis, Georgia Institute of Technology, 1998. http://hdl.handle.net/1853/19627.

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10

Burr, Tracey Alexandra 1967. "Electrical properties of silicon surfaces and interfaces." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/9689.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998.<br>Includes bibliographical references (p. 159-168).<br>This work addresses two scientific challenges associated with diminishing device size. First, alternative surface passivation chemistries are investigated to meet the narrowing process tolerances for high quality silicon surfaces. Second, Si-based light emitting devices are studied to address a longer-term move towards photons instead of electrons for data transfer. A concerted effort is made to engineer environmentally benign solution

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11

Park, Jihong. "Electrical properties of polycrystalline solar cell silicon." Case Western Reserve University School of Graduate Studies / OhioLINK, 1994. http://rave.ohiolink.edu/etdc/view?acc_num=case1061389017.

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12

Stupakova, Jolanta. "Physical properties of porous silicon nanostructures under influence of microwave radiation." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2008. http://vddb.library.lt/obj/LT-eLABa-0001:E.02~2008~D_20080207_161717-66613.

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Just after discovery of porous silicon (PSi) there was clarified that its wide application in various fields opens new unexpected possibilities. One of the possibilities of products of porous silicon in microwave (MW) technique is carried out in the USA now. The propagation of MWs in PSi layers is under investigation. It has been shown that radio and optoelectronic connectors made from this material have low losses and can be applied to improve technique of cellular phone communication as well as other high frequency technique. It is obvious that the next element following the connector has to

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13

Coulthard, Ian. "X-ray excited optical luminescence and chemical properties of porous silicon." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp02/NQ31085.pdf.

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14

Schwarz, Claude Bernard. "Electrical and optical properties of silicide-silicon heterostructures /." [S.l.] : [s.n.], 1995. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=10994.

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15

Rodichkina, Sofia. "Electrical and thermal properties of silicon nanowire arrays." Thesis, Lyon, 2019. http://www.theses.fr/2019LYSEI129.

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Les nanofils de silicium (SiNWs) attirent l’attention particulière en raison de leurs applications thermoélectriques prometteuses. La faible conductivité thermique et les propriétés électriques proches du Si massif en font un nanomatériau thermoélectrique idéal dans le concept de "verre à phonons - cristal à électrons". Théoriquement, les valeurs du facteur de mérite thermoélectrique (ZT) pour SiNW peuvent atteindre 3 à la température ambiante. ZT = 0,7 a été déjà obtenu expérimentalement pour des SiNW individuels, ce qui est proche de ZT pour les chalcogénures de bismuth (ZT = 0,8 -1,0) qui s

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16

Ramanachalam, M. Swaminathan. "Correlation of defects and electrical properties in Si and ZnO." Diss., Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/19675.

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17

Bolt, M. J. B. "Electrical and switching properties of the SIPOS-silicon heterojunction." Thesis, University of Bradford, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.374897.

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18

Pounder, Neill Malcolm. "The electrical transport properties of niobium-silicon amorphous alloys." Thesis, University of Leeds, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.305616.

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19

Lander, Sanna. "Polymer/silicon hybrid solar cells : Fabrication and electrical properties." Thesis, Karlstads universitet, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kau:diva-46945.

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In this thesis, the process of fabricating PEDOT:PSS/c-Si hybrid solar cells has been investigated with the goal of performing a proof of concept as well as to determine the influence on solar cell performance of some processing parameters. Properties of PEDOT:PSS film formation and metal contact formation were investigated as a first step. Additionally, the surface passivation properties of PEDOT:PSS on n-Si have been studied and carrier lifetimes of 300 <img src="http://www.diva-portal.org/cgi-bin/mimetex.cgi?%5Cmu" />s were measured by quasi steady-state photoconductance and photoluminescen

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20

Naredla, Sai Bhargav. "Electrical Properties of Molybdenum Silicon Carbide Schottky Barrier Diodes." Youngstown State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ysu155901806279725.

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21

Seals, Lenward Thurman III. "The application of porous silicon surface and photo- and electrochemical properties to sensor development." Diss., Georgia Institute of Technology, 2001. http://hdl.handle.net/1853/31070.

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22

Nash, Michael. "An investigation into the photocatalytic properties of microporous titanosilicate materials." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 231 p, 2008. http://proquest.umi.com/pqdweb?did=1601517521&sid=5&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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23

Blood, Arabella M. "A study of the electrical properties of defects in silicon." Thesis, University of Oxford, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.298320.

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24

洪國光 and Kwok-kwong Hung. "Electrical characterization of Si-SiO2 interface for thin oxides." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1987. http://hub.hku.hk/bib/B31230866.

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25

Parkinson, Mark. "Structural and optical properties in porous nanostructured semiconductors." Thesis, De Montfort University, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.391476.

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26

Morales, Sánchez Alfredo. "Correlation between optical and electrical properties of materials containing nanoparticles." Doctoral thesis, Universitat Autònoma de Barcelona, 2008. http://hdl.handle.net/10803/3409.

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En esta tesis, capas de óxido de silicio rico en silicio [SRO, (SiOx, x<2)] con diferentes excesos de silicio fueron depositadas por medio de la técnica de depósito químico en fase vapor a baja presión (LPCVD). Un segundo conjunto de muestras de SRO implantadas con silicio (SI-SRO) adicional fueron también fabricadas. Nanopartículas de silicio (Si-nps) en estas capas fueron creadas después de someter a las muestras a un tratamiento térmico en alta temperatura (1100 y 1250º C). La composición, microestructura y propiedades ópticas de estas capas de SRO y SI-SRO fueron analizadas en función de l

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27

Krasovska, Inese. "Optical Properties of Silicon Nanopillar Arrays for Biosensing." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-175760.

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Biosensing is currently a growing research field which is relevant for different applications, for instance in health care. Sensitive and cheap biosensors are required, preferably as simple as possible in their working principle. In this work Si nanopillar structures have been fabricated and used to show the sensing principle by both depositing oxide layers with different thicknesses and by using the biotinstreptavidin model system. Si nanopillars were fabricated by two different surface patterning methods – colloidal lithography and nanoimprint lithography (obtained from a commercial source).

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28

Awan, Shamshad Akhtar. "Electrical properties of RF magnetron-sputtered insulating silicon nitride thin films." Thesis, Keele University, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.311646.

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Si3N4 thin films were prepared by RF magnetron sputtering using N2 or Ar as the sputtering gas. The films were amorphous, with the deposition rate for Ar-sputtered films increasing with RF power and Ar pressure. Sandwich samples having both Al and Au electrodes were prepared. Capacitancevoltage measurements indicated that the contacts for Nj-sputtcred samples were ohmic, while Ar-sputtered samples with Al electrodes exhibited depletion regions. Values of the relative permittivity of 6.3 (AI electrodes) and 6.8 (Au electrodes) were determined from geometric capacitance variations in Ny-sputrere

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29

Colston, Gerard B. "Wafer scale heteroepitaxy of silicon carbon and silicon carbide thin films and their material properties." Thesis, University of Warwick, 2017. http://wrap.warwick.ac.uk/103470/.

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For years now, many have believed the solution to reducing the cost of the wide bandgap compound semiconductor silicon carbide (SiC) is to grow its cubic form (3C-SiC) heteroepitaxially on silicon (Si). This has the potential to reduce cost, increase wafer size and integrate SiC with Si technology. After decades of research, 3C-SiC grown on Si is still yet to penetrate the commercial market as the process is plagued with various issues such as very high growth temperatures, thermal stresses, high cost, poor epitaxial material quality and poor scalability to wafer sizes beyond 100 mm diameter.

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30

Mattey, Nevil L. "On the electrical and structural properties of boron delta layers in silicon." Thesis, University of Warwick, 1991. http://wrap.warwick.ac.uk/4007/.

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This thesis describes the first successful growth of boron δ layers using silicon MBE. SIMS has been used to demonstrate that the layer widths are ∽2nm as has been confirmed by TEM. This is probably an overestimate, an average value of (0.3+-0.5)nm being obtained from XRD, suggesting that these are the thinnest 6 layers produced to date. Hall and XRD measurements indicate that the boron dopant is fully activated up to sheet coverages of 1/2 monolayer, i. e. ∽3.5x10^14cm-2. The CV profile obtained for a B δ layer of sheet density 2.5x10^12cm-2 has FWHM ∽3nm, a result which is shown to be consis

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31

Salem, Mohamed Shaker Mohamed. "Electrochemical formation of porous silicon multilayers and analysis of their optical properties for sensing chemical vapor." Kyoto University, 2007. http://hdl.handle.net/2433/135579.

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Kyoto University (京都大学)<br>0048<br>新制・課程博士<br>博士(エネルギー科学)<br>甲第13408号<br>エネ博第165号<br>新制||エネ||39(附属図書館)<br>UT51-2007-Q809<br>京都大学大学院エネルギー科学研究科エネルギー基礎科学専攻<br>(主査)教授尾形幸生, 教授萩原理加, 准教授作花哲夫<br>学位規則第4条第1項該当

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32

Yao, Bella Liu. "Selective Free-standing Through-wafer Porous Silicon Membrane (SFTPSM) for Integrated Meta-material Devices." Wright State University / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=wright1369008928.

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33

Murphy, John Douglas. "The properties of nitrogen and oxygen in silicon." Thesis, University of Oxford, 2006. http://ora.ox.ac.uk/objects/uuid:d6ff6bba-f9ec-497b-b0f4-2d4162f784cc.

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A novel dislocation locking technique is used to study the behaviour of nitrogen and oxygen in silicon. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen or oxygen diffuses to the dislocations. The stress required to move the dislocations away from the impurities is then measured. Measurement of this unlocking stress as a function of annealing time and temperature allows information on the transport of nitrogen and oxygen to be deduced. Despite being present in a concentration of just 3E14cm-3 in

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34

Reddy, K. Siva Sankara. "Electrical Properties Of Diamond Like Carbon Films In Metal-Carbon-Silicon (MCS) Structure." Thesis, Indian Institute of Science, 1994. http://hdl.handle.net/2005/192.

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Amorphous carbon film with Diamond like properties is the subject of intense interest in the past one and half decade. The unusual properties of these diamond like carbon films arise from the preponderance of SP3 tetrahedral bonding of carbon in the film. Depending on the processing technique and the processing conditions used, the structure of the films can range from amorphous carbon to large grain polycrystalline diamond. These deposited amorphous carbon films, which are smooth, may find their use in optoelectronics, in dielectric films and in microelectronics. These films are found to be c

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35

Amaku, Afi. "A study of the electrical properties of point and extended defects in silicon." Thesis, University of Oxford, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.339355.

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36

Chen, Zengjun Williams John R. "Electrical properties of MOS devices fabricated on 4H carbon-face SiC." Auburn, Ala, 2009. http://hdl.handle.net/10415/1858.

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37

Hajsaid, Marwan. "Photoresponse study of platinum silicide Schottky-barrier diodes and electrical characterization of porous silicon with some device applications /." free to MU campus, to others for purchase, 1996. http://wwwlib.umi.com/cr/mo/fullcit?p9717171.

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38

Kurobe, Kenichi. "Inherent Electrical Properties of Polycrystalline Silicon Solar Cells and Application for Thin Film Structures." 京都大学 (Kyoto University), 2002. http://hdl.handle.net/2433/149427.

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39

Mangu, Raghu. "GAS SENSING PROPERTIES AND TRANSPORT PROPERTIES OF MULTI WALLED CARBON NANOTUBES." UKnowledge, 2008. http://uknowledge.uky.edu/gradschool_theses/578.

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Multi walled carbon nanotubes (MWCNT) grown in highly ordered porous alumina templates were incorporated into a resistive gas sensor design and were evaluated for their sensitivities. The material characteristics and electrical properties of the nanotubes were analyzed. A study was undertaken to elucidate the effect of UV light on desorption characteristics and the dependence of sensitivity on (i) thickness of amorphous carbon layers and (ii) flow rates of analyte gases. These sensors were highly responsive to both oxidizing and reducing gases with steady state sensitivities of 5% and 10% for

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40

Li, Chi Ying Vanessa Materials Science &amp Engineering Faculty of Science UNSW. "Study of hydrogen storage and electrochemical properties of LANI5-based thin films and porous silicon thin films for mini-fuel cells and micro-batteries." Awarded by:University of New South Wales. Materials Science & Engineering, 2008. http://handle.unsw.edu.au/1959.4/43303.

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Two thin film materials - intermetallic and porous silicon thin films, have been studied in this thesis. The first part focuses on the hydrogen storage and electrochemical properties of single layer LaNi5-based thin films fabricated by magnetron sputtering. The aim is to enhance their performance in mini hydrogen storage systems, and their application as electrodes in thin film Ni-MH micro-batteries. Such LaNi5-based thin films were fabricated by magnetron puttering. Using X-ray diffraction (XRD), these thin films revealed a crystalline structure with uniform chemical composition. Using AFM, S

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41

Shrestha, Kiran (Engineer). "Electrical Conduction Mechanisms in the Disordered Material System P-type Hydrogenated Amorphous Silicon." Thesis, University of North Texas, 2014. https://digital.library.unt.edu/ark:/67531/metadc700106/.

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The electrical and optical properties of boron doped hydrogenated amorphous silicon thin films (a-Si) were investigated to determine the effect of boron and hydrogen incorporation on carrier transport. The a-Si thin films were grown by plasma enhanced chemical vapor deposition (PECVD) at various boron concentrations, hydrogen dilutions, and at differing growth temperatures. The temperature dependent conductivity generally follows the hopping conduction model. Above a critical temperature, the dominant conduction mechanism is Mott variable range hopping conductivity (M-VRH), where p = ¼, and th

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42

Chen, ChengHsin, and 陳政欣. "Optical and Electrical Properties of Porous Silicon." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/20741955661017701706.

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碩士<br>國立臺灣大學<br>物理學研究所<br>87<br>We present our work on optical and electrical properties of porous silicon. Firstly, we report on the optical studies of n-type porous silicon prepared by photo-assisted chemical etching. The optical properties of samples obtained under different conditions have been investigated by photoluminescence and Fourier transform infrared absorption measurements, and they are compared with that of p-type porous silicon. Our results clearly demonstrate that the blue emission in porous silicon originates from surface compounds. From the infrared absorption measurement, we

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43

Yeh, Chang-Ching, and 葉長青. "Study on the structural and electrical properties of p+ porous silicon." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/46109841855802867036.

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博士<br>國立清華大學<br>電機工程學系<br>85<br>The development of efficient electroluminescence (EL) devices based on porous silicon (PS) materials is now a clear target and, if successful, it is expected to pose great impact onto the silicon optoelectronics industry. Most of the PS works focus on p- PS because of its superior photoluminescence (PL) efficiency than that of other PS. However, the extremely high resistivit. 躣 p- PS limits its EL efficiency. On the other hand, p+ PS has much higher electrica

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44

Lu, Rung-nan, and 盧嶸男. "Study of Electrical Properties of Multilayer High/Low Porosity Porous Silicon." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/06910866415743646114.

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45

TSENG, WEI-YU, and 曾偉毓. "The Study of Luminescence and Electrical Properties of the Porous Silicon." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/vguwpc.

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碩士<br>大葉大學<br>電機工程學系<br>105<br>In this study, porous silicon flims are fabricated by electrochemical etching at room temperature. The silicon porosity was controlled by the dependence of current density etching of time. In the dependence of temperature, the energy gap is determined by photoluminescence measurement(PL). The surface morphology is analyzed by Scanning Electron Microscope(SEM) measurement. The electrical properties of porous silicon are measured by semiconductor devices parameter system. The influence of the different current density and different voltages in the band gap

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46

Tsai, Hao-Yi, and 蔡豪益. "A Study of The Optical-Electrical Properties of Porous Silicon and the Observation of NDR phenomenon in Porous Silicon Superlattice." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/83059922041260692465.

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碩士<br>國立成功大學<br>電機工程研究所<br>84<br>Conventional Silicon-based material with an indirect bandgap shows a very poor optical radiative efficiency and only emit light outside the visible range. However, porous silicon pr- epared by electrochemical etching can show a strong visible photoluminescence at room temperature by using quantum confinem- ent. In this thesis, optical and surface analytical techniques of PL and Raman scattereing, SEM and TEM have been used to study conventional silicon membr

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47

Huang, Ya-Yu, and 黃雅鈺. "Studies on the Spin Coating and Electrical Properties of Porous Silica Films." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/04303008782983095699.

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碩士<br>國立清華大學<br>化學工程學系<br>90<br>Silica xerogel films with good uniformity and various thicknesses were successfully prepared by a two-step acid-base catalyst procedure and spin coating. After the addition of ammonia catalyst, the sol changes gradually from a Newtonian fluid to a shear-thinning one due to the progress of polymerization reactions. An empirical equation using the relative ratio of aging time to gel time can give successful prediction of sol viscosity. Our systematic study of the coating process indicates the existence of a process window in terms of t/tgel and spin speed can be d

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48

Huang, Kuo-Ming, and 黃國閔. "The Study of Annealing Processes on Porous Silicon and Its Analysis on Photo-Electric Properties." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/87155088506486605657.

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碩士<br>中國文化大學<br>材料科學與奈米科技研究所<br>96<br>In this study, the white light emissions, including red, green and blue (RGB) colors, appearing on the same PS samples are originally proposed by a thermal annealing method. Porous silicon films are fabricated by electrochemical etching on crystalline silicon substrates. Also, the microstructures of porous silicon films are analyzed. In addition, the unique photo-electronic properties and their applications are researched. Using electrochemical etching equipment with O-rings, electrodes, Teflon tubes and Cu plates, crystalline silicon can be etched to form

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49

Chen, Yi-Hung, and 陳奕鴻. "The Study of Electroplate Processes on Porous Silicon and Its Analysis on Electric Properties and Thermal Effect." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/43449867640538295443.

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碩士<br>中國文化大學<br>材料科學與奈米科技研究所<br>97<br>The electrochemistry anodization on crystal silicon is studied to form several kinds of porous silicon films. The morphology and microstructures of the porous silicon films are analyzed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). In the study, the porous silicon structures are fabricated in a Teflon container with HF and alcohol mixture solutions. The applications of electrical and thermal properties are discussed on the porous silicon films. Three topics are focused as follows. In the first, the top views and cross sectio

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50

"Photoluminescent properties of porous silicon." Chinese University of Hong Kong, 1993. http://library.cuhk.edu.hk/record=b5887722.

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by Kan Chi Fai.<br>Title also in Chinese characters.<br>Thesis (M.Phil.)--Chinese University of Hong Kong, 1993.<br>Includes bibliographical references (leaves 120-124).<br>Acknowledgements<br>Abstract<br>Chapter Chapter 1 --- Introduction --- p.1<br>Chapter Chapter 2 --- Proposed mechanisms of the visible photoluminescence of porous silicon --- p.5<br>Chapter Chapter 3 --- Sample Preparation --- p.15<br>Chapter 3.1 --- Anodization of porous silicon in an electrochemical cell --- p.15<br>Chapter 3.2 --- Appearances of samples --- p.18<br>Chapter 3.3 --- Uniformity of samples --- p.21<br>

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