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Journal articles on the topic 'Electrical transport in semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

CAMPBELL, I. H., and D. L. SMITH. "ELECTRICAL TRANSPORT IN ORGANIC SEMICONDUCTORS." International Journal of High Speed Electronics and Systems 11, no. 02 (June 2001): 585–615. http://dx.doi.org/10.1142/s0129156401000952.

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Organic semiconductors have processing and performance advantages for low cost and/or large area applications that have led to their rapid commercialization. Organic semiconductors are π conjugated materials, either small molecules or polymers. Their electrical transport properties are fundamentally distinct from those of inorganic semiconductors. Organic semiconductor thin films are amorphous or polycrystalline and their electronic structures consist of a distribution of localized electronic states with different energies. The localized sites are either individual molecules or isolated conjugated segments of a polymer chain. Electrical transport results from carrier hopping between neighboring sites. At room temperature, equilibration between neighboring sites of different energy is fast enough that carrier transport can be described using a mobility picture. Hopping transport in these disordered systems leads to a mobility that can depend strongly on both the electric field and carrier density. This article presents experimental measurements and theoretical analysis of the electrical transport properties of representative organic semiconductors.

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2

Ka, O. "Electrical Transport in Polycrystalline Semiconductors." Solid State Phenomena 37-38 (March 1994): 201–12. http://dx.doi.org/10.4028/www.scientific.net/ssp.37-38.201.

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3

Khan, Arif, and Atanu Das. "Diffusivity-Mobility Relationship for Heavily Doped Semiconductors with Non-Uniform Band Structures." Zeitschrift für Naturforschung A 65, no. 10 (October 1, 2010): 882–86. http://dx.doi.org/10.1515/zna-2010-1017.

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A general relationship between the diffusivity and the mobility in degenerate semiconductors with non-uniform energy band structures has been presented. The relationship is general enough to be applicable to both non-degenerate and degenerate semiconductors. It is suitable for the study of electrical transport in heavily doped semiconductors and semiconductor devices.

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4

Pennetta, C., M. Tizzoni, A. Carbone, and L. Reggiani. "Electrical transport and noise in polyacene semiconductors." Journal of Computational Electronics 11, no. 3 (May 30, 2012): 287–92. http://dx.doi.org/10.1007/s10825-012-0407-x.

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5

Liu, Wen. "Research on Charge Transport in One-Dimensional Organic Semiconductors Material." Advanced Materials Research 531 (June 2012): 231–34. http://dx.doi.org/10.4028/www.scientific.net/amr.531.231.

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1D conjugated polymers belong to the family of organic semiconductor materials, in which the charge carriers are polarons or bipolarons. Charge transport in 1D organic semiconductors in the presence of high electric fields is studied within the SSH model. It is found that under a sufficiently high electric field, the polaron is dissociated into free-like electron. The electron performs Bloch oscillation (BO) in the organic semiconductors. By enhancing the electric field, BO will be destroyed and electrons can transit from the valence band to the conduction band, which is Zener tunneling in organic semiconductors. The results also indicate a field-induced insulator-metal transition.

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6

Schöll, Eckehard. "Modeling Nonlinear and Chaotic Dynamics in Semiconductor Device Structures." VLSI Design 6, no. 1-4 (January 1, 1998): 321–29. http://dx.doi.org/10.1155/1998/84685.

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We review the modeling and simulation of electrical transport instabilities in semiconductors with a special emphasis on recent progress in the application to semiconductor microstructures. The following models are treated in detail: (i) The dynamics of current filaments in the regime of low-temperature impurity breakdown is studied. In particular we perform 2D simulations of the nascence of a filament upon application of a bias voltage. (ii) Vertical electrical transport in layered semiconductor structures like the heterostructure hot electron diode is considered. Periodic as well as chaotic spatio-temporal spiking of the current is obtained. In particular we find long transients of spatio-temporal chaos preceding regular spiking.

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7

Ghosh, Aswini. "Electrical transport properties of molybdenum tellurite glassy semiconductors." Philosophical Magazine B 61, no. 1 (January 1990): 87–96. http://dx.doi.org/10.1080/13642819008208653.

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8

MACDONALD, A. H. "ANOMALOUS TRANSPORT IN METALS AND SEMICONDUCTORS." International Journal of Modern Physics B 22, no. 01n02 (January 20, 2008): 120. http://dx.doi.org/10.1142/s0217979208046219.

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According to the Kubo formula, the static uniform electric fields in a metal or semiconductor can induce coherence between band states far from the Fermi energy. This interband coherence response appears to be at odds with the normal view that transport is a Fermi-energy property, and is relatively unfamiliar since it makes a negligibly small contribution to the most commonly studied transport coefficients such as the longitudinal conductivity. It has recently been argued that interband coherence response can dominate the anomalous Hall conductivity of ferromagnetic metals and semiconductors and the spin-Hall conductivity of paramagnetic materials. I will review recent theoretical ideas related to the charge Hall conductivity of ferromagnetic materials and the spin Hall conductivity of paramagnetic materials and their relation to recent and future experiments. Note from Publisher: This article contains the abstract only.

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9

Khan, Arif, and Atanu Das. "General Diffusivity-Mobility Relationship for Heavily Doped Semiconductors." Zeitschrift für Naturforschung A 64, no. 3-4 (April 1, 2009): 257–62. http://dx.doi.org/10.1515/zna-2009-3-414.

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Abstract A relationship between diffusivity and mobility in degenerate semiconductors is presented. The relationship is general enough to be applicable to both non-degenerate and degenerate semiconductors. It is suitable for the investigation of the electrical transport in heavily doped semiconductors

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10

Das, Atanu, and Arif Khan. "The Diffusivity-Mobility Relationship of Heavily Doped Semiconductors Exhibiting a Non-Parabolic Band Structure and Bandgap Narrowing." Zeitschrift für Naturforschung A 62, no. 10-11 (November 1, 2007): 605–8. http://dx.doi.org/10.1515/zna-2007-10-1108.

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A relationship between the mobility and diffusivity of semiconductors exhibiting bandgap narrowing has been presented. The relationship is general and applicable to both non-degenerate and degenerate semiconductors under an applied bias. It is suitable for the investigation of the electrical transport in heavily doped semiconductors.

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11

Kim, Deug Yong, and Chang Sub Kim. "Transient nonlinear electrical transport of hot electrons in nonpolar semiconductors." Physical Review B 51, no. 20 (May 15, 1995): 14207–20. http://dx.doi.org/10.1103/physrevb.51.14207.

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12

Yunus, M., P. P. Ruden, and D. L. Smith. "Ambipolar electrical spin injection and spin transport in organic semiconductors." Journal of Applied Physics 103, no. 10 (May 15, 2008): 103714. http://dx.doi.org/10.1063/1.2917215.

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13

Nielsch, Kornelius, Gabi Schierning, Raphael Hermann, and Eckhard Müller. "Thermal transport in nanoscale semiconductors." Semiconductor Science and Technology 29, no. 12 (November 14, 2014): 120301. http://dx.doi.org/10.1088/0268-1242/29/12/120301.

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14

GRAHAM, RION, and DONG YU. "SCANNING PHOTOCURRENT MICROSCOPY IN SEMICONDUCTOR NANOSTRUCTURES." Modern Physics Letters B 27, no. 25 (September 23, 2013): 1330018. http://dx.doi.org/10.1142/s0217984913300184.

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Scanning photocurrent microscopy (SPCM) is a powerful experimental tool used to investigate spatially resolved optoelectronic properties of semiconductors and their nanostructures. Raster-scanned laser excitation generates a position-dependent photocurrent map from which carrier diffusion length, electric field distribution, doping concentration and more can be explored. In this review, we will briefly discuss the history of the technique, the theory behind locally injected carrier transport in semiconductors, the SPCM experimental setup, and recent applications of SPCM in semiconductor nanostructures. Particularly, we have shown that the minority carrier diffusion length can also be obtained by SPCM in two-dimensional semiconductors and that the local excitation can result in an internal electric field because of the difference in electron and hole mobilities.

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15

Mei, Yaochuan, Peter J. Diemer, Muhammad R. Niazi, Rawad K. Hallani, Karol Jarolimek, Cynthia S. Day, Chad Risko, John E. Anthony, Aram Amassian, and Oana D. Jurchescu. "Crossover from band-like to thermally activated charge transport in organic transistors due to strain-induced traps." Proceedings of the National Academy of Sciences 114, no. 33 (July 24, 2017): E6739—E6748. http://dx.doi.org/10.1073/pnas.1705164114.

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The temperature dependence of the charge-carrier mobility provides essential insight into the charge transport mechanisms in organic semiconductors. Such knowledge imparts critical understanding of the electrical properties of these materials, leading to better design of high-performance materials for consumer applications. Here, we present experimental results that suggest that the inhomogeneous strain induced in organic semiconductor layers by the mismatch between the coefficients of thermal expansion (CTE) of the consecutive device layers of field-effect transistors generates trapping states that localize charge carriers. We observe a universal scaling between the activation energy of the transistors and the interfacial thermal expansion mismatch, in which band-like transport is observed for similar CTEs, and activated transport otherwise. Our results provide evidence that a high-quality semiconductor layer is necessary, but not sufficient, to obtain efficient charge-carrier transport in devices, and underline the importance of holistic device design to achieve the intrinsic performance limits of a given organic semiconductor. We go on to show that insertion of an ultrathin CTE buffer layer mitigates this problem and can help achieve band-like transport on a wide range of substrate platforms.

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16

Assefa, Gezahegn. "Electric Field Controlled Itinerant Carrier Spin Polarization in Ferromagnetic Semiconductors." Advances in Condensed Matter Physics 2021 (July 12, 2021): 1–5. http://dx.doi.org/10.1155/2021/6663876.

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Electric field control of magnetic properties has been achieved across a number of different material systems. In diluted magnetic semiconductors (DMSs), ferromagnetic metals, multiferroics, etc., electrical manipulation of magnetism has been observed. Here, we study the effect of an electric field on the carrier spin polarization in DMSs ( GaAsMn ); in particular, emphasis is given to spin-dependent transport phenomena. In our system, the interaction between the carriers and the localized spins in the presence of electric field is taken as the main interaction. Our results show that the electric field plays a major role on the spin polarization of carriers in the system. This is important for spintronics application.

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17

Wang, L. G., H. W. Zhang, X. L. Tang, Y. Q. Song, Z. Y. Zhong, and Y. X. Li. "Characterization of charge transport and electrical properties in disordered organic semiconductors." Physica Scripta 84, no. 4 (September 8, 2011): 045701. http://dx.doi.org/10.1088/0031-8949/84/04/045701.

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18

Bhatnagar, V. K., and K. L. Bhatia. "Frequency dependent electrical transport in bismuth-modified amorphous germanium sulfide semiconductors." Journal of Non-Crystalline Solids 119, no. 2 (April 1990): 214–31. http://dx.doi.org/10.1016/0022-3093(90)90845-d.

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19

Kim, Sang-il, and Hyun-Sik Kim. "Calculated Electric Transport Properties of Thermoelectric Semiconductors Under Different Carrier Scattering Mechanisms." Korean Journal of Metals and Materials 59, no. 2 (February 5, 2021): 127–34. http://dx.doi.org/10.3365/kjmm.2021.59.2.127.

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The widespread application of thermoelectric devices in cooling and waste heat recovery systems will be achieved when materials achieve high thermoelectric performance. However, improving thermoelectric performance is not straightforward because the Seebeck coefficient and electrical conductivity of the materials have opposite trends with varying carrier concentration. Here, we demonstrate that carrier scattering mechanism engineering can improve the power factor, which is the Seebeck coefficient squared multiplied by electrical conductivity, by significantly improving the electrical conductivity with a decreased Seebeck coefficient. The effect of engineering the carrier scattering mechanism was evaluated by comparing the band parameters (density-of-states effective mass, non-degenerate mobility) of Te-doped and Te, transition metal co-doped <i>n</i>-type Mg2Sb3 fitted via the single parabolic band model under different carrier scattering mechanisms. Previously, it was reported that co-doping transition metal with Te only changed the carrier scattering mechanism from ionized impurity scattering to mixed scattering between ionized impurities and acoustic phonons, compared to Te-doped samples. The approximately three times enhancement in the power factor of Te, transition metal co-doped samples reported in the literature have all been attributed to a change in the scattering mechanism. However, here it is demonstrated that Te, transition metal co-doping also increased the density-of-states effective mass. Here, the impact of the scattering mechanism change on the electric transport properties of <i>n</i>-type Mg2Sb3 without an effective mass increase was studied. Even without the effective mass increase, carrier scattering mechanism engineering improved the power factor, and its effect was maximized by appropriate carrier concentration tuning.

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20

McEuen, Paul L., and Ji-Yong Park. "Electron Transport in Single-Walled Carbon Nanotubes." MRS Bulletin 29, no. 4 (April 2004): 272–75. http://dx.doi.org/10.1557/mrs2004.79.

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AbstractSingle-walled carbon nanotubes (SWNTs) are emerging as an important new class of electronic materials. Both metallic and semiconducting SWNTs have electrical properties that rival or exceed the best metals or semiconductors known. In this article, we review recent transport and scanning probe experiments that investigate the electrical properties of SWNTs.We address the fundamental scattering mechanisms in SWNTs, both in linear response and at high bias.We also discuss the nature and properties of contacts to SWNTs. Finally, we discuss device performance issues and potential applications in electronics and sensing.

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21

Sun, Jie, Na Lin, Hao Ren, Cheng Tang, Letao Yang, and Xian Zhao. "The electronic structure, mechanical flexibility and carrier mobility of black arsenic–phosphorus monolayers: a first principles study." Physical Chemistry Chemical Physics 18, no. 14 (2016): 9779–87. http://dx.doi.org/10.1039/c6cp00047a.

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First principles calculations are performed to systematically study the structure, mechanical, electrical, and transport properties of the new artificial layered semiconductors-black arsenic–phosphorus (b-AsP).

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22

Gupta, Dhritiman, N. S. Vidhyadhiraja, and K. S. Narayan. "Transport of Photogenerated Charge Carriers in Polymer Semiconductors." Proceedings of the IEEE 97, no. 9 (September 2009): 1558–69. http://dx.doi.org/10.1109/jproc.2009.2019228.

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23

Lee, Hyeon-Jun, Katsumi Abe, June-Seo Kim, Won Seok Yun, and Myoung-Jae Lee. "Parasitic Current Induced by Gate Overlap in Thin-Film Transistors." Materials 14, no. 9 (April 29, 2021): 2299. http://dx.doi.org/10.3390/ma14092299.

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As novel applications of oxide semiconductors are realized, various structural devices and integrated circuits are being proposed, and the gate-overlay defect phenomenon is becoming more diverse in its effects. Herein, the electrical properties of the transistor that depend on the geometry between the gate and the semiconductor layer are analyzed, and the specific phenomena associated with the degree of overlap are reproduced. In the semiconductor layer, where the gate electrode is not overlapped, it is experimentally shown that a dual current is generated, and the results of 3D simulations confirm that the magnitude of the current increases as the parasitic current moves away from the gate electrode. The generation and path of the parasitic current are then represented visually through laser-enhanced 2D transport measurements; consequently, the flow of the dual current in the transistor is verified to be induced by the electrical potential imbalance in the semiconductor active layer, where the gate electrodes do not overlap.

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24

Northrop, David. "Book Review: Surface Electronic Transport Phenomena in Semiconductors." International Journal of Electrical Engineering & Education 29, no. 4 (October 1992): 380. http://dx.doi.org/10.1177/002072099202900417.

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25

Li, H. L., H. T. Lin, Y. H. Wu, T. Liu, Z. L. Zhao, G. C. Han, and T. C. Chong. "Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors." Journal of Magnetism and Magnetic Materials 303, no. 2 (August 2006): e318-e321. http://dx.doi.org/10.1016/j.jmmm.2006.01.237.

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26

Tian, Y. F., Shi-shen Yan, M. W. Zhao, Y. Y. Dai, Y. P. Zhang, R. M. Qiao, S. J. Hu, et al. "Controllable spin-polarized electrical transport in wide-band-gap oxide ferromagnetic semiconductors." Journal of Applied Physics 107, no. 3 (February 2010): 033713. http://dx.doi.org/10.1063/1.3305457.

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27

Zhou, Jiawei, Bolin Liao, and Gang Chen. "First-principles calculations of thermal, electrical, and thermoelectric transport properties of semiconductors." Semiconductor Science and Technology 31, no. 4 (March 7, 2016): 043001. http://dx.doi.org/10.1088/0268-1242/31/4/043001.

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28

Mohammad, S. Noor, and Charles E. Rogers. "Theory of electrical transport and recombination in polycrystalline semiconductors under optical illumination." Solid-State Electronics 31, no. 7 (July 1988): 1157–67. http://dx.doi.org/10.1016/0038-1101(88)90275-4.

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29

Mnatsakanov, T. T., A. G. Tandoev, S. N. Yurkov, and M. E. Levinshtein. "Specific features of quasineutral carrier transport modes in semiconductors and semiconductor structures." Semiconductor Science and Technology 24, no. 7 (May 26, 2009): 075006. http://dx.doi.org/10.1088/0268-1242/24/7/075006.

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30

Shi, Ya-Rui, and Yu-Fang Liu. "Theoretical study on the charge transport and metallic conducting properties in organic complexes." Physical Chemistry Chemical Physics 21, no. 24 (2019): 13304–18. http://dx.doi.org/10.1039/c9cp02170a.

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The charge transfer process between substrate molecular and dopant always appears in doped organic semiconductors, so that molecular doping is a common method to improve the electrical properties by combining appropriate complexes of electron acceptor and donor molecules.

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31

Yoo, Seung-Jun, and Jang-Joo Kim. "Charge Transport in Electrically Doped Amorphous Organic Semiconductors." Macromolecular Rapid Communications 36, no. 11 (April 9, 2015): 984–1000. http://dx.doi.org/10.1002/marc.201500026.

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32

Choo, K. Y., and S. V. Muniandy. "Fractional dispersive transport in inhomogeneous organic semiconductors." International Journal of Modern Physics: Conference Series 36 (January 2015): 1560008. http://dx.doi.org/10.1142/s2010194515600083.

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The study of transport dynamics of charge carriers in homogeneous and inhomogeneous organic semiconductor using the variable order time-fractional drift-diffusion equation (VO-TFDDE) is presented in this paper. The fractional-time derivative operator and spatial derivative operator of the time-fractional drift-diffusion equation are discretized respectively using the implicit difference scheme and the centered difference scheme. Self-consistent Poisson solver was incorporated in the model to solve for the electric potential and the localized electric field that sweeps the charge carriers across the device. The homogeneity of the material is represented by the different values or functions of the fractional derivative order. Diffusion transport dynamics is observed when charge carriers are moving in homogeneous crystalline-like structure. In contrast, dispersive transport dynamics is observed when charge carriers are moving in homogeneous amorphous-like structure. For inhomogeneous amorphous-crystalline-mixed structure, pulse broadening effect is impeded as charge carriers are moving towards the crystalline-like region at the other end of the device. Conversely, pulse broadening effect is getting severe if charge carriers are moving across the device with inhomogeneous crystalline-amorphous-mixed structure. Therefore, in order to achieve diffusive-like transport dynamics that could reduce the pulse broadening effect, homogeneous crystalline-like structure or inhomogeneous amorphous-crystalline-mixed structure is recommended for device fabrication.

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33

Wang Ru-Zhi, Yuan Rui-Yang, Song Xue-Mei, Wei Jin-Sheng, and Yan Hui. "Magnetic-electric controllable spin transport in semiconductors superlattic." Acta Physica Sinica 58, no. 5 (2009): 3437. http://dx.doi.org/10.7498/aps.58.3437.

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34

Li, Ling, Steven Van Winckel, Jan Genoe, and Paul Heremans. "Electric field-dependent charge transport in organic semiconductors." Applied Physics Letters 95, no. 15 (October 12, 2009): 153301. http://dx.doi.org/10.1063/1.3246160.

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35

Das, Atanu, and Arif Khan. "Carrier Concentrations in Degenerate Semiconductors Having Band Gap Narrowing." Zeitschrift für Naturforschung A 63, no. 3-4 (April 1, 2008): 193–98. http://dx.doi.org/10.1515/zna-2008-3-413.

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The density-of-states effective mass approximation and the conduction-band effective mass approximation are employed to formulate carrier concentrations and the diffusivity-mobility relationship (DMR) for heavily doped n-semiconductors exhibiting band gap narrowing. These are very suitable for the investigation of electrical transport also in heavily doped p-semiconductors. Numerical calculations indicate that the DMR depends on a host of parameters including the temperature, carrier degeneracy, and the non-parabolicity of the band structure.

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36

Wang, L. G., Huai Wu Zhang, Xiao Li Tang, and Yuan Qiang Song. "Unification of the Charge Transport in Field-Effect Transistors and Light-Emitting Diodes Based on Organic Semiconductors." Materials Science Forum 687 (June 2011): 222–27. http://dx.doi.org/10.4028/www.scientific.net/msf.687.222.

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A physically based mathematical model for the charge transport in field-effect transistors and lighting-emitting diodes based on disordered organic semiconductors has been presented. It is developed basing on the Gaussian disorder model and extends the pioneering work of Pasveer et al. [Phys. Rev. Lett. 94, 206601 (2005)] to higher carrier densities and large electric field. The experimental current voltage characteristics in devices based on semiconducting polymers are excellently reproduced with this model. Furthermore, we calculate and analyze some electrical properties for the relevant polymers in detail using this model.

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37

Krishnamurthy, Srinivasan, and Arden Sher. "Transport studies in narrow-gap semiconductors revisited." Journal of Electronic Materials 24, no. 5 (May 1995): 641–46. http://dx.doi.org/10.1007/bf02657973.

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38

Kozyrev, Evgeny Nikolaevich, Igor Nikolaevich Goncharov, Tamerlan Taymurazovich Magkoev, Rovan Olegovich Askerov, and Dmitry Zurabovich Pizhelauri. "Solar Energy Converter into the Electric Energy Based on Perovskite." Nano Hybrids and Composites 28 (February 2020): 155–60. http://dx.doi.org/10.4028/www.scientific.net/nhc.28.155.

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The paper discusses the methods for the formation of solar-to-electrical converters on perovskites. The possibility of using inorganic semiconductors as a transport layer is shown. The solar energy converter is formed on the basis of the nanostructured porous anodic aluminum oxide.

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39

Katilius, R., J. Liberis, A. Matulionis, R. Raguotis, and P. Sakalas. "Nonlinear transport and fluctuation characteristics of doped semiconductors." Nonlinear Analysis: Modelling and Control 2 (December 21, 1998): 35–42. http://dx.doi.org/10.15388/na.1998.2.0.15285.

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Fluctuation phenomena in doped n-type GaAs, at moderate applied electric fields being influenced by interelectron scattering, are interpreted in terms of effective electron temperature. Electron Fick’s diffusion coefficients in longitudinal and transfer direction are estimated.

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40

Anile, Angelo Marcello, Vittorio Romano, and Giovanni Russo. "Hyperbolic Hydrodynamical Model of Carrier Transport in Semiconductors." VLSI Design 8, no. 1-4 (January 1, 1998): 521–25. http://dx.doi.org/10.1155/1998/93843.

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41

LEE, Hyun Seok. "Defects and Optoelectronic Properties in 2D Semiconductors." Physics and High Technology 29, no. 9 (September 30, 2020): 11–14. http://dx.doi.org/10.3938/phit.29.031.

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Two-dimensional (2D) van der Waals semiconductors have potential for various optoelectronic applications, owing to their unique optical and electrical properties at an atomic layer thickness. A stable excitonic emission from 2D monolayer semiconductors at room temperature, owing to a reduced dielectric screening effect, opens new fields of research on excitonics and valleytronics. Moreover, their low dimensionality without surface dangling bonds allows for unique quantum transport phenomena via artificial van der Waals stacking using a versatile library of 2D materials. In this article, the author introduces the tunable quantum optoelectronic properties of 2D semiconductors by manipulating native defects, van der Waals interfaces, Coulomb interactions, etc. Additionally, the author reviews the electronic and the optoelectronic applications utilizing such unique tunable properties of 2D semiconductors.

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42

Choudhury, S., S. Sain, M. K. Mandal, S. K. Pradhan, and A. K. Meikap. "Microstructure characterization and electrical transport of nanocrystalline Zn0.90Mn0.10O semiconductors synthesized by mechanical alloying." Materials Research Bulletin 77 (May 2016): 138–46. http://dx.doi.org/10.1016/j.materresbull.2016.01.029.

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43

Lu, Nianduan, Ling Li, Nan Gao, and Ming Liu. "Understanding electrical-thermal transport characteristics of organic semiconductors: Violation of Wiedemann-Franz law." Journal of Applied Physics 120, no. 19 (November 21, 2016): 195108. http://dx.doi.org/10.1063/1.4967997.

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44

ROMANO, VITTORIO, and GIOVANNI RUSSO. "NUMERICAL SOLUTION FOR HYDRODYNAMICAL MODELS OF SEMICONDUCTORS." Mathematical Models and Methods in Applied Sciences 10, no. 07 (October 2000): 1099–120. http://dx.doi.org/10.1142/s0218202500000550.

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Numerical solutions of recent hydrodynamical models of semiconductors are computed in one-space dimension. Such models describe charge transport in semiconductor devices. Two models are taken into consideration. The first one has been developed by Blotekjaer, Baccarani et al., and the second one by Anile et al. In both cases the system of equations can be written as a convection-diffusion type system, with a right-hand side describing relaxation effects and interaction with a self-consistent electric field. The numerical scheme is a splitting scheme based on the Nessyahu–Tadmor scheme for the hyperbolic step, and a semi-implicit scheme for the relaxation step. The numerical results are compared to detailed Monte-Carlo simulation.

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45

Joon Hoong, Lim. "Effects of Sintering Atmosphere on the Optical, Thermal and Electrical Properties of Inkjet Printed ZnxCu(1-x)Fe2O4 Thin Films." Journal of Advanced Research in Fluid Mechanics and Thermal Sciences 81, no. 2 (March 25, 2021): 25–35. http://dx.doi.org/10.37934/arfmts.81.2.2535.

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The effects of sintering atmosphere on the optical, thermal and electric properties of inkjet printed ZnxCu(1-x)Fe2O4 thin films have been investigated. The thin film samples were sintered separately in vacuum and oxygen. The obtained samples were then characterized by X-ray diffraction (XRD), optical band gap, electrical conductivity, Seebeck coefficient and thermal conductivity. XRD analysis showed that the fabricated samples have a cubic spinel structure of zinc copper ferrite regardless of the sintering atmosphere. The electrical conductivity of ZnxCu(1-x)Fe2O4 thin films sintered in oxygen was about 5 % higher compared to ZnxCu(1-x)Fe2O4 thin films sintered in vacuum. The optical band gap shows that the samples sintered in oxygen had smaller band gap compared to samples sintered in vacuum. The electronic band structure simulated through ABINIT shows ZnxCu(1-x)Fe2O4 is an indirect band gap material. A smaller electronic band gap was observed in O2 rich condition and was in agreement with the optical band gap and electrical conductivity test results. Seebeck coefficient of ZnxCu(1-x)Fe2O4 thin films sintered in oxygen remained positive , confirming charge transport by hole carries as p-type semiconductors. A change from p-type to n-type semiconductors was observed when ZnxCu(1-x)Fe2O4 thin films sintered in vacuum.

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46

Lee, Hyeonju, Xue Zhang, Jung Kim, Eui-Jik Kim, and Jaehoon Park. "Investigation of the Electrical Characteristics of Bilayer ZnO/In2O3 Thin-Film Transistors Fabricated by Solution Processing." Materials 11, no. 11 (October 26, 2018): 2103. http://dx.doi.org/10.3390/ma11112103.

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Metal-oxide thin-film transistors (TFTs) have been developed as promising candidates for use in various electronic and optoelectronic applications. In this study, we fabricated bilayer zinc oxide (ZnO)/indium oxide (In2O3) TFTs by using the sol-gel solution process, and investigated the structural and chemical properties of the bilayer ZnO/In2O3 semiconductor and the electrical properties of these transistors. The thermogravimetric analysis results showed that ZnO and In2O3 films can be produced by the thermal annealing process at 350 °C. The grazing incidence X-ray diffraction patterns and X-ray photoemission spectroscopy results revealed that the intensity and position of characteristic peaks related to In2O3 in the bilayer structure were not affected by the underlying ZnO film. On the other hand, the electrical properties, such as drain current, threshold voltage, and field-effect mobility of the bilayer ZnO/In2O3 TFTs obviously improved, compared with those of the single-layer In2O3 TFTs. Considering the energy bands of ZnO and In2O3, the enhancement in the TFT performance is explained through the electron transport between ZnO and In2O3 and the formation of an internal electric field in the bilayer structure. In the negative gate-bias stress experiments, it was found that the internal electric field contributes to the electrical stability of the bilayer ZnO/In2O3 TFT by reducing the negative gate-bias-induced field and suppressing the trapping of holes in the TFT channel. Consequently, we suggest that the bilayer structure of solution-processed metal-oxide semiconductors is a viable means of enhancing the TFT performance.

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ALLEN, S. J., and J. S. SCOTT. "TERAHERTZ TRANSPORT IN SEMICONDUCTOR QUANTUM STRUCTURES." International Journal of High Speed Electronics and Systems 13, no. 04 (December 2003): 1129–48. http://dx.doi.org/10.1142/s0129156403002149.

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Photon assisted transport, dynamic localization and absolute negative conductance appear in the terahertz photoconductivity in semiconductor quantum structures and are close analogs of quasi-particle transport in microwave irradiated superconducting junctions. By embedding superlattice devices in quasi-optical arrays and integrating them into terahertz cavities, the dynamical conductance of electrically biased superlattices can be measured. Models including the complications of electric field domains can account for the results in a semi quantitative manner. Uniform electrically biased superlattices appear to be potentially important as a terahertz gain medium.

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48

Gurary, A., G. S. Tompa, S. Liang, R. A. Stall, Y. Lu, C. Y. Hwang, and W. E. Mayo. "Elemental vapor transport epitaxy of II-VI semiconductors." Journal of Electronic Materials 22, no. 5 (May 1993): 457–61. http://dx.doi.org/10.1007/bf02661613.

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Wang, L. G., J. J. Zhu, X. L. Liu, and L. F. Cheng. "Characterization of the Hole Transport and Electrical Properties in the Small-Molecule Organic Semiconductors." Journal of Electronic Materials 46, no. 10 (June 16, 2017): 5546–52. http://dx.doi.org/10.1007/s11664-017-5649-8.

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Таранова, А. И., А. П. Новицкий, А. И. Воронин, С. В. Таскаев, and В. В. Ховайло. "Влияние легирования ванадием на термоэлектрические свойства сплавов Гейслера Fe-=SUB=-2-=/SUB=-Ti-=SUB=-1-x-=/SUB=-V-=SUB=-x-=/SUB=-Sn." Физика и техника полупроводников 53, no. 6 (2019): 777. http://dx.doi.org/10.21883/ftp.2019.06.47727.36.

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In this work the results of an experimental study of Fe2Ti1-xVxSn alloys (x = 0; 0.06; 0.15; 0.2) are presented. According to the temperature dependencies of the electrical conductivity, Seebeck coefficient and thermal conductivity, it is established, that the studied compositions exhibit transport properties typical for semiconductors. The substitution of V at the Ti site leads to a change of the p-type electrical conductivity behavior to n-type; the pristine sample of Fe2TiSn has the best thermoelectric properties.

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