Relevant bibliographies by topics / Electroluminescence

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Electroluminescence'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 July 2025

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Journal articles on the topic "Electroluminescence"

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Ando, Masanori, Chie Hosokawa, Ping Yang, and Norio Murase. "Electroluminescence of Hybrid Self-Organised Fibres Incorporating CdTe Quantum Dots." Australian Journal of Chemistry 65, no. 9 (2012): 1257. http://dx.doi.org/10.1071/ch12127.

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We demonstrated electroluminescence from hybrid 1D glass fibres incorporating CdTe quantum dots with a thin SiO2 overlayer which contains CdS-like clusters. The self-organised fibres, prepared by refluxing precursor nanowires, exhibited red electroluminescence on Au interdigitated array electrodes at room temperature. Although fluctuation with time was observed in the electroluminescence, relatively low threshold electric field (2.6 × 106 V m–1) suggests that the CdTe quantum dots-based hybrid fibres are expected to be applied to low voltage driven electroluminescent devices.
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Xiao, T., G. Liu, M. Adams, and A. H. Kitai. "Green Zn2SiO4:Mn thin-film electroluminescence on silicon substrates." Canadian Journal of Physics 74, no. 3-4 (1996): 132–35. http://dx.doi.org/10.1139/p96-020.

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Bright electroluminescence has been achieved on silicon substrates for the first time using Zn2SiO4:Mn thin films that were RF magnetron sputtered. A brightness of over 16 foot lambert (fL) was observed at 400 Hz and 260 V, with a steep brightness–voltage behaviour characteristic of ZnS electroluminescence. A multiplexed electroluminescent display is now feasible using Zn2SiO4:Mn.
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Михайлова, М. П., Э. В. Иванов, Л. В. Данилов та ін. "Электролюминесценция в гетероструктурах n-GaSb/InAs/ p-GaSb с одиночной квантовой ямой, выращенных методом МОГФЭ". Физика и техника полупроводников 53, № 1 (2019): 50. http://dx.doi.org/10.21883/ftp.2019.01.46986.8958.

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AbstractThe electroluminescent characteristics of a type-II n -GaSb/ n -InAs/ p -GaSb heterostructure with a single deep quantum well grown by metalorganic vapor-phase epitaxy are investigated. The energy-band diagram of the structure and the positions of the electron and heavy-hole energy levels are calculated. The analysis of the current–voltage characteristics demonstrates that the dark current in the structure under study flows via the tunneling mechanism. Intense electroluminescence characterized by a weak temperature dependence was observed in the spectral range of 3–4 μm at T = 77 and 3
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Semakova A. A., Ruzhevich M. S., Romanov V. V., Bazhenov N. L., Mynbaev K. D., and Moiseev K. D. "Stimulated emission in the InAs/InAsSb/InAsSbP heterostructures with asymmetric electronic confinement." Semiconductors 56, no. 9 (2022): 659. http://dx.doi.org/10.21883/sc.2022.09.54131.9925.

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The electroluminescent characteristics of the InAs/InAs1-ySby/InAsSbP asymmetric light-emitting diode heterostructures with high InSb mole fraction in the active region (y>0.09) in the temperature range 4.2-300 K have been studied. Stimulated emission was achieved in the wavelength range 4.1-4.2 μm at low temperatures (T<30 K). It was found that the electroluminescence spectra were formed as a result of the superposition of contributions from different channels of radiative recombination of charge carriers near the type II heterointerface. The effect of the quality of the type II
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Parkhomenko Ya. A., Ivanov E. V., and Moiseev K. D. "Radiative recombination in the InAs/InSb type II broken-gap heterojucntion with quantum dots at the interface." Physics of the Solid State 65, no. 4 (2023): 628. http://dx.doi.org/10.21883/pss.2023.04.56006.11.

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The electroluminescent properties of narrow-gap type II InAs/InSb/InAs heterostructures containing a single layer of InSb quantum dots placed at the interface of the p-n junction in InAs were studied. The features of the electroluminescence spectra depending on the surface density of nanoobjects at a broken-gap type II heterointerface were investigated both at forward and reverse bias. When applying a reverse bias to the heterostructures under study, the suppression of negative interband luminescence and the dominance of interface recombination transitions at the InSb/InAs type II heterojuncti
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Miyake, Seiya, Toshinobu Inagaki, Tatsuo Mori, and Teruyosi Mizutani. "Electroluminescence and Electrical Properties of Organic Electroluminescent Diodes." IEEJ Transactions on Fundamentals and Materials 115, no. 12 (1995): 1257–62. http://dx.doi.org/10.1541/ieejfms1990.115.12_1257.

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Pappalardo, R. G. "Photo‐Electroluminescence in Commercial Thin‐Film Electroluminescent Panels." Journal of The Electrochemical Society 137, no. 11 (1990): 3469–74. http://dx.doi.org/10.1149/1.2086252.

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Wang, Junling, Zhuan Li, and Chunmei Liu. "A New Kind of Blue Hybrid Electroluminescent Device." Journal of Nanoscience and Nanotechnology 16, no. 4 (2016): 3763–67. http://dx.doi.org/10.1166/jnn.2016.11816.

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Bright blue Electroluminescence come from a ITO/BBOT doped silica (6×10−3 M) made by a sol–gel method/Al driven by AC with 500 Hz at different voltages and Gaussian analysis under 55 V showed that blue emission coincidenced with typical triple emission from BBOT. This kind of device take advantage of organics (BBOT) and inorganics (silica). Electroluminescence from a singlelayered sandwiched device consisting of blue fluorescent dye 2,5-bis (5-tert-butyl-2-benzoxazolyl) thiophene (BBOT) doped silica made by sol–gel method was investigated. A number of concentrations of hybrid devices were prep
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Kyômen, Tôru, Sayaka Hasuko, Minoru Hanaya, and Hiroshi Takashima. "Electroluminescence of a Multilayer in which Thin Films of NaNbO3:Pr Phosphor and SnO2:Sb Transparent Conductor Are Alternately Stacked." Key Engineering Materials 643 (May 2015): 33–37. http://dx.doi.org/10.4028/www.scientific.net/kem.643.33.

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Oxide inorganic electroluminescent device in which thin films of Pr-doped NaNbO3 phosphor and Sb-doped SnO2 transparent conductor are alternately stacked was prepared by sol-gel and spin-coating methods. Red electroluminescence was observed due to f-f transitions of Pr3+ ions by applying 5-kHz ac voltages to the device. The luminance was 1.0 cd m−2 at 25 V ac and5.0 cd m−2 at 34 V ac.
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Gurin, N. T., and O. Yu Sabitov. "Electroluminescence parameters of thin-film ZnS: Mn electroluminescent devices." Technical Physics 51, no. 8 (2006): 1012–24. http://dx.doi.org/10.1134/s106378420608010x.

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Dissertations / Theses on the topic "Electroluminescence"

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Mackay, Ian. "Thin film electroluminescence /." Online version of thesis, 1989. http://hdl.handle.net/1850/10551.

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O'Brien, Diarmuid Francis. "Conjugated polymer electroluminescence." Thesis, University of Sheffield, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.266004.

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Greenham, Neil Clement. "Electroluminescence in conjugated polymers." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.296643.

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Metsios, Ioannis. "Electroluminescence and inorganic phosphor science." Thesis, University of Hull, 2007. http://hydra.hull.ac.uk/resources/hull:5856.

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The research is focussed on wide bandgap 11-VI semiconductors, and more specifically on ZnS and CdS, with applications as thin film electroluminescent displays in the expanding display device market. The science of electroluminescent semiconductors and inorganic salt precipitation is combined with a unique, thin film laser processing technique known as laser induced forward transfer or direct writing (the later terminology used mostly in the case of metal films). Zinc sulfide and cadmium zinc sulfide films with a thickness ranging between 70 and 400 nin have been prepared in an aqueous chemica
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Mills, David H. "Electroluminescence and ageing of polyethylene." Thesis, University of Southampton, 2012. https://eprints.soton.ac.uk/338950/.

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Electrical insulation is known to age when under electrical stress. One cause of this is thought to relate to the movement and build up of charge within the insulation. The emission of a low level of light from polymeric materials when under electrical stressing is shown to occur before the onset of currently detectable material degradation. This light is termed electroluminescence (EL)and under an ac electric field is thought to relate to the interaction of charge in close proximity to the electrode-polymer interface. Understanding the cause of this light emission gives a very high resolution
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Weaver, Michael Stuart. "Electroluminescence from organic light emitting diodes." Thesis, University of Sheffield, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.265610.

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Bedrich, Karl G. "Quantitative electroluminescence measurements of PV devices." Thesis, Loughborough University, 2017. https://dspace.lboro.ac.uk/2134/27303.

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Electroluminescence (EL) imaging is a fast and comparatively low-cost method for spatially resolved analysis of photovoltaic (PV) devices. A Silicon CCD or InGaAs camera is used to capture the near infrared radiation, emitted from a forward biased PV device. EL images can be used to identify defects, like cracks and shunts but also to map physical parameters, like series resistance. The lack of suitable image processing routines often prevents automated and setup-independent quantitative analysis. This thesis provides a tool-set, rather than a specific solution to address this problem. Compreh
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Alshawa, Amer. "AC electroluminescence in thulium-doped zinc sulfide." Ohio : Ohio University, 1988. http://www.ohiolink.edu/etd/view.cgi?ohiou1182778578.

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Dhillon, S. S. "Terahertz intersubband electroluminescence from quantum cascade heterostructures." Thesis, University of Cambridge, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.598519.

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Mid-infrared quantum cascade lasers (QCLs) have been extensively developed since their realisation in 1994, with a spectral range covered from 3.4<I>μ</I>m (88THz) to 24<I>μ</I>m (12.5THz). This is a direct result of advances in molecular beam epitaxy and band-structure engineering. QCLs are fabricated from multi-quantum well semiconductor heterostructures in which an appropriate engineering of the thickness and composition of the semiconductor layers adjusts the intersubband transition energies, offering considerable design flexibility of the band profile. By application of a suitable electri
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Fuhrer, Markus Franz. "Electroluminescence Spectroscopy of Quantum Well Solar Cells." Thesis, Imperial College London, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.516978.

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Books on the topic "Electroluminescence"

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Shionoya, Shigeo, and Hiroshi Kobayashi, eds. Electroluminescence. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93430-8.

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Gerd, Mueller, ed. Electroluminescence. Academic Press, 2000.

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H, Kafafi Zakya, ed. Organic electroluminescence. Taylor & Francis, 2005.

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H, Kafafi Zakya, ed. Organic electroluminescence. Taylor & Francis, 2005.

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H, Kafafi Zakya, ed. Organic electroluminescence. CRC Press, Taylor & Francis, 2005.

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Kitai, Adrian. Luminescent materials and applications. John Wiley, 2008.

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Kido, Junji. Yūki EL ni kakero!: Sekaiteki ken'i ga akasu Nihon kigyō ga Ssamusun ni katsu hōhō = Bet on electroluminescence! Daiyamondosha, 2013.

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Ōnishi, Toshihiro. Kōbunshi EL zairyō: Hikaru kōbunshi no kaihatsu. Kyōritsu Shuppan, 2004.

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H, Mauch R., Gumlich Hans-Eckart, and International Workshop on Electroluminescence (8th : 1996 : Berlin, Germany), eds. Inorganic and organic electroluminescence. Wissenschaft und Technik, 1996.

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R, Vij D., and Institute of Physics (Great Britain), eds. Handbook of electroluminescent materials. Institute of Physics Pub., 2004.

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Book chapters on the topic "Electroluminescence"

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Gumlich, H. E., A. Zeinert, and R. Mauch. "Electroluminescence." In Luminescence of Solids. Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5361-8_6.

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Gooch, Jan W. "Electroluminescence." In Encyclopedic Dictionary of Polymers. Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_4284.

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Weik, Martin H. "electroluminescence." In Computer Science and Communications Dictionary. Springer US, 2000. http://dx.doi.org/10.1007/1-4020-0613-6_5904.

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Springholz, G., and G. Bauer. "9.7.4 Electroluminescence." In Growth and Structuring. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-540-68357-5_102.

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Chadha, Surjit S. "Powder electroluminescence." In Solid State Luminescence. Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1522-3_6.

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Lane, Paul A. "Polyfluorene Electroluminescence." In Organic Light-Emitting Devices. Springer New York, 2004. http://dx.doi.org/10.1007/978-0-387-21720-8_10.

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Rebohle, Lars, and Wolfgang Skorupa. "Electroluminescence Spectra." In Rare-Earth Implanted MOS Devices for Silicon Photonics. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-14447-9_4.

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Rebohle, Lars, and Wolfgang Skorupa. "Electroluminescence Efficiency." In Rare-Earth Implanted MOS Devices for Silicon Photonics. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-14447-9_5.

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Bradley, D. D. C., and C. Taliani. "Electroluminescence and Photorefractivity." In Photoactive Organic Materials. Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-017-2622-1_40.

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Müller, G. O. "Thin film electroluminescence." In Solid State Luminescence. Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1522-3_5.

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Conference papers on the topic "Electroluminescence"

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Park, Gyuna, Ivan Zhigulin, Hoyoung Jung, et al. "Room temperature electroluminescence from isolated colour centres in van der Waals semiconductors." In CLEO: Fundamental Science. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_fs.2024.fth5b.2.

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First demonstration of electroluminescence from quantum emitters in hexagonal boron nitride by utilizing a novel excitation mechanism that is distinct from traditional p-n junctions. We unveil stable isolated narrowband electroluminescence even at room temperature.
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Wang, Jingdong, Zhu Cheng, Fanqi Meng, and Na Ma. "Electroluminescence Image Enhancement Method for Photovoltaic Panels." In 2025 28th International Conference on Computer Supported Cooperative Work in Design (CSCWD). IEEE, 2025. https://doi.org/10.1109/cscwd64889.2025.11033596.

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Jia-yu, Zhang, Gu Pei Fu, Liu Xu, and Tang Jing Fa. "Experimental Study of Low-Voltage -Driven Thin Film Electroluminescence Mechanism." In Optical Interference Coatings. Optica Publishing Group, 1995. http://dx.doi.org/10.1364/oic.1995.thc27.

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Thin film electroluminescent devices are now attracting much attention since they have open up a way to the application to the flat panel display. However, the bases of the physical phenomena governing the electroluminescence have been reported comparatively little. This is due to the difficulties to treat in detail the carrier dynamics of the interface and the bulk in the high electric field (1). In this paper, we study experimentally the field distribution in phosphor layer and the properties of insulator/phosphor interface.
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Sarkas, Harry W., Charles D. Merritt, and Zakya H. Kafafi. "Preparation, Optical Spectroscopy, and Fluorescence of Molecular Organic Composites for Light-Emitting Diodes." In Organic Thin Films for Photonic Applications. Optica Publishing Group, 1995. http://dx.doi.org/10.1364/otfa.1995.md.35.

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Electroluminescence from small organic molecules has been known for some time. Thirty years ago, Helfrich and Schneider reported blue-violet electroluminescence in anthracene with an external quantum efficiency as high as 8%.1 This quantum efficiency is much better than that for the best polymer-based light-emitting diode (LED) reported to date.2 In spite of the superior quantum efficiency of molecular-based electroluminescent devices, no major progress was achieved until fairly recently when Tang and VanSlyke reported the first low-voltage organic LED with an external quantum efficiency of 1%
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Burr, T. A., and K. D. Kolenbrander. "A Silicon Solid-State LED: Long-Lived Visible Electroluminescence from Silicon Nanocrystallites." In Microphysics of Surfaces: Nanoscale Processing. Optica Publishing Group, 1995. http://dx.doi.org/10.1364/msnp.1995.msaa2.

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We have constructed and characterized visible electroluminescent devices based on Si nanocrystallite thin films. The key to stable electroluminescent emission is the nature of the Si surface capping layer, which determines the efficiency and stability of the devices. The layers must be transparent to the emitted light, provide sufficient electrical contact to insure carrier transport to the active layer, stabilize the Si surfaces to prevent chemical and electrical degradation, and passivate the dangling surface bonds which would act as non-radiative recombination centers and quench emission. O
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Eda, Goki. "Upconversion electroluminescence in van der Waals tunnel diodes." In JSAP-Optica Joint Symposia. Optica Publishing Group, 2023. http://dx.doi.org/10.1364/jsapo.2023.20p_a602_8.

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Plasmonic tunnel junctions comprising van der Waals semiconductor are an attractive platform where the interplay between inelastically tunneling electrons, surface plasmons, and excitons is expected to give rise to novel light emission phenomena. Here, we report observation of peculiar upconversion electroluminescene in van der Waals tunnel diodes comprising a monolayer transition metal dichalcogenide (TMD) in the electron tunneling pathway. The device exhibits bimodal electroluminescence with a broad low energy band and a narrow high energy band. Interestingly, the high energy emission, which
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Yan Xie and Shihong Qin. "Principle and application of inorganic Electroluminescence and organic Electroluminescence." In 2011 International Conference on Electric Information and Control Engineering (ICEICE). IEEE, 2011. http://dx.doi.org/10.1109/iceice.2011.5777215.

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Zhang Fengling, Xu Zheng, Huang Zonghao, Xu Changyuan, Wang Yongsheng, and Xu Xurong. "AC Electroluminescence From Single Layer Organic Thinfilm Electroluminescent Devices Made Of Polymer Ppv." In 1997 Asian Symposium on Information Display. IEEE, 1997. http://dx.doi.org/10.1109/asid.1997.631405.

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Yu, S. Q., D. Ding, J. B. Wang, S. R. Johnson, and Y. H. Zhang. "Electroluminescence refrigeration in semiconductors." In 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference. IEEE, 2006. http://dx.doi.org/10.1109/cleo.2006.4628594.

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Werner, A. T., Hugh J. Byrne, Diarmuid F. O'Brien, and Siegmar Roth. "Electroluminescence in fullerene crystals." In SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, edited by Zakya H. Kafafi. SPIE, 1994. http://dx.doi.org/10.1117/12.196129.

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Reports on the topic "Electroluminescence"

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Bernard, J. E., G. Negley, S. Sarwate, C. B. Cooper, and F. E. Williams. Thin-Film Electroluminescence. Defense Technical Information Center, 1985. http://dx.doi.org/10.21236/ada158352.

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Zhang, Xuejun, Ashok S. Shetty, and Samson A. Jenekhe. Electroluminescence and Photophysical Properties of Polyquinolines. Defense Technical Information Center, 1999. http://dx.doi.org/10.21236/ada366991.

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Zhang, Yong-Hang. Time-Resolved IR Electroluminescence Spectroscopy System. Defense Technical Information Center, 2006. http://dx.doi.org/10.21236/ada461015.

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Garter, M., R. Birkhahn, A. J. Steckl, and J. Scofield. Visible and Infrared Rare-Earth Activated Electroluminescence from Erbium Doped GaN. Defense Technical Information Center, 1999. http://dx.doi.org/10.21236/ada457728.

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Jenekhe, Samson A., Xuejun Zhang, X. L. Chen, Vi-En Choong, and Yongli Gao. WITHDRAWN: Finite Size Effects on Electroluminescence of Nanoscale Semiconducting Polymer Heterojunctions. Defense Technical Information Center, 1996. http://dx.doi.org/10.21236/ada314623.

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Zou, Lijuan. Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices. Office of Scientific and Technical Information (OSTI), 2003. http://dx.doi.org/10.2172/816439.

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Smith, D. B. ELECTROLUMINESCENT MATERIAL FOR FLAT PANEL DISPLAY. Office of Scientific and Technical Information (OSTI), 2000. http://dx.doi.org/10.2172/885573.

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Sun, Sey-Shing. Development of a Manufacturable Blue Electroluminescent (EL) Phosphor Process for the Production of White Monochrome Thin Film Electroluminescent (TFEL) and Full Color Active Matrix Electroluminescent (AMEL) Displays. Defense Technical Information Center, 2002. http://dx.doi.org/10.21236/ada408952.

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Jenekhe, Samson A., and Xuejun Zhang. Tunable Multicolor Electroluminescent Polymer Devices for Full Color Displays. Defense Technical Information Center, 1999. http://dx.doi.org/10.21236/ada366990.

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Auflick, J. Human factors evaluation of electroluminescent display. number sign. 1. Office of Scientific and Technical Information (OSTI), 1989. http://dx.doi.org/10.2172/5372081.

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