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Journal articles on the topic 'Electroluminescent Devices -Semiconductor Nanocrystals'

Author: Grafiati

Published: 7 September 2023

Last updated: 19 July 2025

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1

Erdem, Talha, and Hilmi Volkan Demir. "Colloidal nanocrystals for quality lighting and displays: milestones and recent developments." Nanophotonics 5, no. 1 (2016): 74–95. http://dx.doi.org/10.1515/nanoph-2016-0009.

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AbstractRecent advances in colloidal synthesis of nanocrystals have enabled high-quality high-efficiency light-emitting diodes, displays with significantly broader color gamut, and optically-pumped lasers spanning the whole visible regime. Here we review these colloidal platforms covering the milestone studies together with recent developments. In the review, we focus on the devices made of colloidal quantum dots (nanocrystals), colloidal quantum rods (nanorods), and colloidal quantum wells (nanoplatelets) as well as those of solution processed perovskites and phosphor nanocrystals. The review

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2

Zhang, Jing, Lijin Wang, Fei Chen, Aiwei Tang, and Feng Teng. "Optical properties of multinary copper chalcogenide semiconductor nanocrystals and their applications in electroluminescent devices." Chinese Science Bulletin 66, no. 17 (2021): 2162–78. http://dx.doi.org/10.1360/tb-2020-1633.

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3

Bertoni, Cristina, Diego Gallardo, Steve Dunn, Nikolai Gaponik, and Alexander Eychmüller. "Fabrication and characterization of red-emitting electroluminescent devices based on thiol-stabilized semiconductor nanocrystals." Applied Physics Letters 90, no. 3 (2007): 034107. http://dx.doi.org/10.1063/1.2433030.

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4

Kim, Whi Dong, Dahin Kim, Da-Eun Yoon, et al. "Pushing the Efficiency Envelope for Semiconductor Nanocrystal-Based Electroluminescence Devices Using Anisotropic Nanocrystals." Chemistry of Materials 31, no. 9 (2019): 3066–82. http://dx.doi.org/10.1021/acs.chemmater.8b05366.

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5

Jun, Shinae, Eunjoo Jang, Jongjin Park, and Jongmin Kim. "Photopatterned Semiconductor Nanocrystals and Their Electroluminescence from Hybrid Light-Emitting Devices." Langmuir 22, no. 6 (2006): 2407–10. http://dx.doi.org/10.1021/la051756k.

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6

He, Majun, Deren Yang, and Dongsheng Li. "Electroluminescence from metal–oxide–semiconductor devices based on erbium silicate nanocrystals and silicon nanocrystals co-embedded in silicon oxide thin films." Journal of Materials Science: Materials in Electronics 32, no. 15 (2021): 20659–67. http://dx.doi.org/10.1007/s10854-021-06579-x.

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7

Klimov, Victor I. "(Invited) Colloidal Quantum Dot Laser Diodes: Three Decades in the Making." ECS Meeting Abstracts MA2024-01, no. 22 (2024): 1314. http://dx.doi.org/10.1149/ma2024-01221314mtgabs.

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It has been 30 years since the first demonstration of lasing with semiconductor nanocrystals embedded in glass matrices1 – the samples akin to standard colored glass filters. Following this discovery, it took three years to realize lasing with epitaxial QDs2 and six more years to demonstrate the effect of amplified spontaneous emission (ASE) – a precursor of lasing – with colloidal QDs.3 So far, all reported studies into colloidal QD lasing have utilized optically excited samples. However, most of the prospective technological applications require electrically pumped devices, that is, laser di

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8

Thung, Yi Tian, Zitong Zhang, Fei Yan, Hilmi Volkan Demir, and Handong Sun. "Narrow electroluminescence in bromide ligand-capped cadmium chalcogenide nanoplatelets." Applied Physics Letters 120, no. 24 (2022): 241105. http://dx.doi.org/10.1063/5.0094798.

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Colloidal zinc blende II–VI semiconductor nanoplatelets (NPLs) demonstrate as a promising class of materials for optoelectronic devices due to their unique excitonic characteristics, narrow emission linewidth, and quantum well-structure. Adopting heterostructures for these nanocrystals allows tuning of their optical features and enhances their photostability, photoluminescence (PL), quantum yield (QY), and color purity for further device integration. Exchanging of carboxylate capping ligands on top and bottom [001] facets of CdSe NPLs with halide ligands is an alternative to achieve the aims o

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9

Gautam, Nitendra Kumar, Meera Ramrakhiani, R. K. Kuraria, and S. R. Kuraria. "Electroluminescence in Organically Capped Cd_1-xZn_xSe Chalcogenide Nanocrystals." Defect and Diffusion Forum 361 (January 2015): 215–30. http://dx.doi.org/10.4028/www.scientific.net/ddf.361.215.

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Currently there is a great interest in II–VI semiconductor nanoparticles, particularly organically capped soluble particles of cadmium or zinc sulphide and selenide, for their ready to use application in devices. For electroluminescence (EL) devices, it is expected to cover a broad spectrum and to tune various specific colours by preparing Cd1-xZnx Se instead of CdSe and ZnSe. Ternary alloys have composition dependent properties; therefore Cd1-xZnxSe has attracted much attention in the fields of luminescence and optoelectronic devices. It has wide optical band-gap and good stability with respe

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10

Kameyama, Tatsuya, Shuhei Tsuneizumi, Taro Uematsu, Susumu Kuwabata, and Tsukasa Torimoto. "(Invited) Effect of Cu Doping on the Energy Structure of Dumbbell-Shaped ZnS-AgInS₂ Nanocrystals." ECS Meeting Abstracts MA2023-01, no. 37 (2023): 2133. http://dx.doi.org/10.1149/ma2023-01372133mtgabs.

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Colloidal semiconductor nanocrystals (NCs) have been intensively developed for applications in photovoltaics, light-emitting diodes, electroluminescent devices, and biological markers, due to their tunable light absorption and excellent light emission properties. Among them, group I-III-VI-based multinary semiconductor NCs, such as CuInS2, CuInSe2 and AgInS2, have received significant attention for the application to solar energy conversion systems because of their large absorption coefficient and low toxicity. Recently, we have successfully prepared ZnS-AgInS2 solid solution (ZAIS) NCs and op

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11

Manzoor, K., S. R. Vadera, N. Kumar, and T. R. N. Kutty. "Multicolor electroluminescent devices using doped ZnS nanocrystals." Applied Physics Letters 84, no. 2 (2004): 284–86. http://dx.doi.org/10.1063/1.1639935.

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12

Scotognella, Francesco. "Metal Halide Perovskite Light-Emitting Transistor with Tunable Emission Based on Electrically Doped Semiconductor Nanocrystal-Based Microcavities." Ceramics 6, no. 3 (2023): 1894–99. http://dx.doi.org/10.3390/ceramics6030116.

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Electroluminescence of metal halide perovskites has been widely reported via the fabrication and optimization of light-emitting diodes and light-emitting transistors. Light-emitting transistors are particularly interesting owing to the additional control of the gate voltage on the electroluminescence. In this work, the design of a microcavity, with a defect mode that can be tuned with an applied voltage, integrated with a metal halide light-emitting transistor is shown. The optical properties of the device have been simulated with the transfer matrix method, considering the wavelength-dependen

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13

Yang, Yang. "Polymer Electroluminescent Devices." MRS Bulletin 22, no. 6 (1997): 31–38. http://dx.doi.org/10.1557/s0883769400033601.

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Electroluminescence (EL) is the emission of light generated from the radiative recombination of electrons and holes electrically injected into a luminescent semiconductor. Conventional EL devices are made of inorganic direct-bandgap semiconductors, such as GaAs and InGaAs. Recently EL devices based on conjugated organic small molecules and polymers have attracted increasing attention due to easy fabrication of large areas, unlimited choice of colors, and mechanical flexibility. Potential applications of these organic/polymeric EL devices include backlights for displays, alphanumeric displays,

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14

Qiao, Fen. "Semiconductor Nanocrystals for Photovoltaic Devices." Materials Science Forum 852 (April 2016): 935–38. http://dx.doi.org/10.4028/www.scientific.net/msf.852.935.

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Recently, photovoltaic devices based on colloidal semiconductor nanocrystals (NCs) have attracted a great interest due to their flexible synthesis with tunable band gaps and shape-dependent optical and electronic properties. However, the surface of NCs typically presents long chain with electrically insulating organic ligands, which hinder the device applications for NCs. So the major challenge of NCs for photovoltaic devices application is to decrease the inter NC space and the height of the tunnel barriers among NCs, therefore increase the transport properties of NCs. In this article, recent

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15

Pacifici, D., A. Irrera, G. Franzò, M. Miritello, F. Iacona, and F. Priolo. "Erbium-doped Si nanocrystals: optical properties and electroluminescent devices." Physica E: Low-dimensional Systems and Nanostructures 16, no. 3-4 (2003): 331–40. http://dx.doi.org/10.1016/s1386-9477(02)00615-x.

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16

Chouhan, Lata, Sushant Ghimire, Challapalli Subrahmanyam, Tsutomu Miyasaka, and Vasudevanpillai Biju. "Synthesis, optoelectronic properties and applications of halide perovskites." Chemical Society Reviews 49, no. 10 (2020): 2869–85. http://dx.doi.org/10.1039/c9cs00848a.

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17

Yeh, P. H., L. J. Chen, P. T. Liu, D. Y. Wang, and T. C. Chang. "Nonvolatile Memory Devices with NiSi2/CoSi2 Nanocrystals." Journal of Nanoscience and Nanotechnology 7, no. 1 (2007): 339–43. http://dx.doi.org/10.1166/jnn.2007.18032.

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Metal-oxide-semiconductor structures with NiSi2 and CoSi2 nanocrystals embedded in the SiO2 layer have been fabricated. A pronounced capacitance–voltage hysteresis was observed with a memory window about 1 V under low programming voltage. The retention characteristic can be improved by using HfO2 layer as control oxide. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.

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18

Adachi, D., H. Haze, H. Shirahase, T. Toyama, and H. Okamoto. "Blue emitting thin-film electroluminescent devices utilizing Tm-doped ZnS nanocrystals." Journal of Non-Crystalline Solids 352, no. 9-20 (2006): 1628–31. http://dx.doi.org/10.1016/j.jnoncrysol.2006.01.076.

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19

Horváth, Zs J., and P. Basa. "Nanocrystal Non-Volatile Memory Devices." Materials Science Forum 609 (January 2009): 1–9. http://dx.doi.org/10.4028/www.scientific.net/msf.609.1.

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The physical background and present status of the application of metal-insulator-silicon structures with semiconductor nanocrystals embedded in the insulator layer for memory purposes is breafly summarized.

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20

Shin, Seungki, Yoonkyu Kim, Namyoung Gwak, et al. "Light-induced crosslinking of perovskite nanocrystals for all-solution-processed electroluminescent devices." Applied Surface Science 608 (January 2023): 155016. http://dx.doi.org/10.1016/j.apsusc.2022.155016.

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21

Shim, Moonsub, Congjun Wang, David J. Norris, and Philippe Guyot-Sionnest. "Doping and Charging in Colloidal Semiconductor Nanocrystals." MRS Bulletin 26, no. 12 (2001): 1005–8. http://dx.doi.org/10.1557/mrs2001.257.

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Modern semiconductor technology has been enabled by the ability to control the number of carriers (electrons and holes) that are available in the semiconductor crystal. This control has been achieved primarily with two methods: doping, which entails the introduction of impurity atoms that contribute additional carriers into the crystal lattice; and charging, which involves the use of applied electric fields to manipulate carrier densities near an interface or junction. By controlling the carriers with these methods, the electrical properties of the semiconductor can be precisely tailored for a

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22

Peng, Zhiwei, Yuhan Gao, and Guohua Xie. "Perovskite Light-Emitting Devices with Doped Hole Transporting Layer." Molecules 26, no. 6 (2021): 1670. http://dx.doi.org/10.3390/molecules26061670.

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Perovskite quantum dots (PQDs) have drawn global attention in recent years and have been used in a range of semiconductor devices, especially for light-emitting diodes (LEDs). However, because of the nature of low-conductive ligands of PQDs and surface and bulk defects in the devices, charge injection and transport should be carefully managed in order to maximize the electroluminescent performances. In this study, we employed three p-dopants, i.e., 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), 1,3,4,5,7,8-hexafluoro-11,11,12,12-tetracyanonaphtho-2,6-quinodimethane (F6-TCNNQ),

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23

Yu, Buyang, Chunfeng Zhang, Lan Chen, et al. "Ultrafast dynamics of photoexcited carriers in perovskite semiconductor nanocrystals." Nanophotonics 10, no. 8 (2020): 1943–65. http://dx.doi.org/10.1515/nanoph-2020-0681.

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Abstract Perovskite semiconductor nanocrystals have emerged as a promising family of materials for optoelectronic applications including light-emitting diodes, lasers, light-to-electricity convertors and quantum light emitters. The performances of these devices are fundamentally dependent on different aspects of the excited-state dynamics in nanocrystals. Herein, we summarize the recent progress on the photoinduced carrier dynamics studied by a variety of time-resolved spectroscopic methods in perovskite nanocrystals. We review the dynamics of carrier generation, recombination and transport un

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24

Chen, Hsueh-Shih. "(Invited) Recent Advancements in the Development of Semiconductor Quantum Dots for Solid-State Light Emitting Diodes and Photovoltaic Devices." ECS Meeting Abstracts MA2023-02, no. 34 (2023): 1667. http://dx.doi.org/10.1149/ma2023-02341667mtgabs.

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Semiconductor quantum dots (QDs) have emerged as a promising class of nanomaterials with diverse applications in areas such as lighting, displays, photo-detectors, and image sensing. The successful commercialization of QD-based displays, exemplified by QLED TVs, demonstrates the technology's market viability. Ongoing research on QD color down-converters for mini-LED and micro-LED technologies, as well as electroluminescent QD devices, holds considerable promise for advancing future lighting and display technologies. Additionally, QDs have exhibited potential in photovoltaic applications, inclu

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25

Toyama, T., K. Yoshimura, M. Fujii, H. Haze, and H. Okamoto. "Novel green thin-film electroluminescent devices utilizing ZnS nanocrystals doped with Tb compounds." Applied Surface Science 244, no. 1-4 (2005): 524–27. http://dx.doi.org/10.1016/j.apsusc.2004.10.112.

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26

Garcia, Emilio, Christophe Arnold, Jean-Pierre Hermier, and Michele D'Amico. "Gold plasmonic enhanced luminescence of silica encapsulated semiconductor hetero-nanoplatelets." Nanoscale Advances 3, no. 15 (2021): 4572–78. http://dx.doi.org/10.1039/d1na00273b.

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27

Hsu, Chin-Tsar. "Electroluminescent devices with different insulator/semiconductor interfaces prepared by radio-frequency sputtering." Optical Engineering 32, no. 8 (1993): 1803. http://dx.doi.org/10.1117/12.143991.

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28

Abulikemu, Mutalifu, Silvano Del Gobbo, Dalaver H. Anjum, Mohammad Azad Malik, and Osman M. Bakr. "Colloidal Sb2S3nanocrystals: synthesis, characterization and fabrication of solid-state semiconductor sensitized solar cells." Journal of Materials Chemistry A 4, no. 18 (2016): 6809–14. http://dx.doi.org/10.1039/c5ta09546h.

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Antimony sulfide nanocrystals of various shapes and different phases are synthesized using a colloidal hot-injection method, and the as-prepared nanocrystals are used as a light harvesting material in photovoltaic devices.

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29

Dalui, Amit, Ali Hossain Khan, Bapi Pradhan, Jayita Pradhan, Biswarup Satpati, and Somobrata Acharya. "Facile synthesis of composition and morphology modulated quaternary CuZnFeS colloidal nanocrystals for photovoltaic application." RSC Advances 5, no. 118 (2015): 97485–94. http://dx.doi.org/10.1039/c5ra18157g.

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30

Sledz, Florian, Assegid M. Flatae, Stefano Lagomarsino, et al. "Light emission from color centers in phosphorus-doped diamond." EPJ Web of Conferences 266 (2022): 09008. http://dx.doi.org/10.1051/epjconf/202226609008.

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Light emission from color centers in diamond is being extensively investigated for developing, among other quantum devices, single-photon sources operating at room temperature. By doping diamond with phosphorus, one obtains an n-type semiconductor, which can be exploited for the electrical excitation of color centers. Here, we discuss the optical properties of color centers in phosphorus-doped diamond, especially the silicon-vacancy center, presenting the single-photon emission characteristics and the temperature dependence aiming for electroluminescent single-photon emitting devices.

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31

Yamada, Hiroyuki, Junpei Watanabe, Kazuhiro Nemoto, Hong-Tao Sun, and Naoto Shirahata. "Postproduction Approach to Enhance the External Quantum Efficiency for Red Light-Emitting Diodes Based on Silicon Nanocrystals." Nanomaterials 12, no. 23 (2022): 4314. http://dx.doi.org/10.3390/nano12234314.

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Despite bulk crystals of silicon (Si) being indirect bandgap semiconductors, their quantum dots (QDs) exhibit the superior photoluminescence (PL) properties including high quantum yield (PLQY > 50%) and spectral tunability in a broad wavelength range. Nevertheless, their low optical absorbance character inhibits the bright emission from the SiQDs for phosphor-type light emitting diodes (LEDs). In contrast, a strong electroluminescence is potentially given by serving SiQDs as an emissive layer of current-driven LEDs with (Si-QLEDs) because the charged carriers are supplied from electrodes un

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32

Álvarez-Conde, Javier, Eva M. García-Frutos, and Juan Cabanillas-Gonzalez. "Organic Semiconductor Micro/Nanocrystals for Laser Applications." Molecules 26, no. 4 (2021): 958. http://dx.doi.org/10.3390/molecules26040958.

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Organic semiconductor micro/nanocrystals (OSMCs) have attracted great attention due to their numerous advantages such us free grain boundaries, minimal defects and traps, molecular diversity, low cost, flexibility and solution processability. Due to all these characteristics, they are strong candidates for the next generation of electronic and optoelectronic devices. In this review, we present a comprehensive overview of these OSMCs, discussing molecular packing, the methods to control crystallization and their applications to the area of organic solid-state lasers. Special emphasis is given t

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33

Roither, J., W. Heiss, N. P. Gaponik, D. V. Talapin, and A. Eychmüller. "Colloidally synthesised semiconductor nanocrystals in resonant cavity light emitting devices." Electronics Letters 38, no. 22 (2002): 1373. http://dx.doi.org/10.1049/el:20020890.

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34

Pi, Xiaodong. "(Invited, Digital Presentation) Exploring New Applications of Luminescent Silicon Nanocrystals." ECS Meeting Abstracts MA2022-01, no. 20 (2022): 1078. http://dx.doi.org/10.1149/ma2022-01201078mtgabs.

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The luminescence of silicon nanocrystals (Si NCs) has been traditionally studied for various applications such as light-emitting diodes, solar cells and bioimaging[1]. In the past few years we have started exploring the use of Si NCs for emerging optoelectronic synaptic devices[2,3]. As an important type of optoelectronic synaptic devices, electroluminescent synaptic devices have been fabricated by using Si NCs[4,5]. Under the stimulation of electrical spikes these devices give out electroluminescence that decays in the timeframe of tens of microseconds, enabling a series of synaptic functiona

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35

Lin, Weyde M. M., Maksym Yarema, Mengxia Liu, Edward Sargent, and Vanessa Wood. "Nanocrystal Quantum Dot Devices: How the Lead Sulfide (PbS) System Teaches Us the Importance of Surfaces." CHIMIA International Journal for Chemistry 75, no. 5 (2021): 398–413. http://dx.doi.org/10.2533/chimia.2021.398.

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Semiconducting thin films made from nanocrystals hold potential as composite hybrid materials with new functionalities. With nanocrystal syntheses, composition can be controlled at the sub-nanometer level, and, by tuning size, shape, and surface termination of the nanocrystals as well as their packing, it is possible to select the electronic, phononic, and photonic properties of the resulting thin films. While the ability to tune the properties of a semiconductor from the atomistic- to macro-scale using solution-based techniques presents unique opportunities, it also introduces challenges for

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36

Chen, Ya-Ching, Cyuan-Bin Siao, Hong-Shuo Chen, Kuan-Wen Wang, and Shu-Ru Chung. "The application of Zn0.8Cd0.2S nanocrystals in white light emitting diodes devices." RSC Advances 5, no. 106 (2015): 87667–71. http://dx.doi.org/10.1039/c5ra15068j.

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In this study, colloidal ternary semiconductor Zn<sub>0.8</sub>Cd<sub>0.2</sub>S (ZnCdS) nanocrystals (NCs) with wide emission and high quantum yields (QYs) have been prepared and used as nanophosphors in white light emitting diodes (WLEDs).

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37

Lee, Hsiao Yi, Thinh Cong Tran, and Sang Dang Ho. "ILLUMINATION PROPERTIES AND GADGET EFFICIENCY STEADINESS OF WLEDS BASED ON QUANTUM DOTS." Journal of Advanced Engineering and Computation 8, no. 4 (2024): 198. https://doi.org/10.55579/jaec.202484.459.

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The recent improvements in picture quality have led to the need for new methods to create displays that meet more rigorous standards. While the screen market is mainly dominated by liquid crystal display (LCD) and light emitting diode (LED) technology, these technologies have downsides solvable via creating augmented electroluminescent screens. Utilizing sticky quantum dots (QDs) in the form of down transmuters facilitates creating screens featuring highly improved chroma clarity as well as range. As such, sticky nanocrystals prove a promising option when it comes to creating electroluminescen

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38

Das, K., S. Maikap, A. Dhar, B. K. Mathur, and S. K. Ray. "Metal-oxide-semiconductor structure with Ge nanocrystals for memory devices applications." Electronics Letters 39, no. 25 (2003): 1865. http://dx.doi.org/10.1049/el:20031146.

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39

Hasegawa, Yasuchika. "Magnetic Semiconductor EuO, EuS, and EuSe Nanocrystals for Future Optical Devices." Chemistry Letters 42, no. 1 (2013): 2–7. http://dx.doi.org/10.1246/cl.2013.2.

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40

Prezioso, S., S. M. Hossain, A. Anopchenko, et al. "Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices." Applied Physics Letters 94, no. 6 (2009): 062108. http://dx.doi.org/10.1063/1.3081410.

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41

Kauzlarich, Susan M. "(Invited) Microwave-Assisted Synthesis and Characterization of Doped Ge Nanocrystals." ECS Meeting Abstracts MA2024-01, no. 23 (2024): 1348. http://dx.doi.org/10.1149/ma2024-01231348mtgabs.

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Ge is one of the quintessential semiconductors being considered in nanoform for optoelectronic applications. As a group 14 semiconductor, bulk Ge has a small bandgap and a large Bohr exciton radius, making it an attractive semiconductor for various applications, including solar cell technology, photodetectors, and integrated flash memory devices. I will present our work on doped and alloyed Ge nanoparticles via microwave-assisted synthesis and galvanic replacement. I will present new insights from this chemical route that may impact the nanoparticle synthesis of other covalently bonding semico

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42

Zhang, Ya Ting, and Jian Quan Yao. "Photoconductive Properties of MEH-PPV/InP Nanocomposite Diode." Advanced Materials Research 531 (June 2012): 31–34. http://dx.doi.org/10.4028/www.scientific.net/amr.531.31.

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InP nanocrystals were prepared by an economic chemical reaction. A very high density of surface states is found at 0.5 eV below the intrinsic conductive band edge. Mixing these InP nanocrystals with MEH-PPV, obtained the composite. Devices with structure ITO/composite(MEH-PPV)/Al were fabricated and investigated. Photocurrent spectra showed that the interface between a conjugated polymer and a semiconductor nanocrystal can be used to provide efficient charge separation for neutral excitons on both the ground states and excited ones. Incorporation of nanocrystals, the conductivity of diode show

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43

Anni, Marco. "Special Issue “II-VI Semiconductor Nanocrystals and Hybrid Polymer–Nanocrystal Systems”." Nanomaterials 11, no. 2 (2021): 467. http://dx.doi.org/10.3390/nano11020467.

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The continuous need to improve the performance of photonic, electronic and optoelectronic devices has stimulated research toward the development of innovative semiconducting materials which display better properties with respect to standard bulk semiconductors [...]

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44

Jin, Jingwen, Yaning Huang, Chen Zhang, Li Zhang, Shaoxing Jiang, and Xi Chen. "Novel Lead Halide Perovskite and Copper Iodide Materials for Fluorescence Sensing of Oxygen." Biosensors 15, no. 3 (2025): 132. https://doi.org/10.3390/bios15030132.

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The most commonly used optical oxygen sensing materials are phosphorescent molecules and functionalized nanocrystals. Many exploration studies on oxygen sensing have been carried out using the fluorescence or phosphorescence of semiconductor nanomaterials. Lead halide perovskite nanocrystals, a new type of ionic semiconductor, have excellent optical properties, making them suitable for use in optoelectronic devices. They also show promising applications in analytical sensing and biological imaging, especially manganese-doped perovskite nanocrystals for optical oxygen sensing. As a class of mat

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45

Batstone, J. L. "Structural and electronic properties of defects in semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 4–5. http://dx.doi.org/10.1017/s0424820100136398.

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The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defect

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46

Aleksandrova, Mariya. "Influence of the Temperature as an Environmental Factor on the Electrophysical Behavior of Flexible Polymeric Luminescent Devices." Journal of Coatings 2014 (September 10, 2014): 1–5. http://dx.doi.org/10.1155/2014/437302.

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The effect of operational temperature on the electrophysical properties of polymer based electroluminescent structures is examined. For this purpose thin film of light-emitting semiconductor polyphenylenevinylene derivative is deposited between two indium-tin oxide (ITO) electrodes. DC current-voltage (I-V) characteristics of the fabricated devices ITO/polyphenylenevinylene derivative PPV-D/ITO are measured at varying ambient temperatures, ranging from room temperature (25°C) to 70°C. Several important electrical parameters like a trap factor, traps activation energy distribution, free carrier

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Tong, Zhouyu, Mingxuan Bu, Yiqiang Zhang, Deren Yang, and Xiaodong Pi. "Hyperdoped silicon: Processing, properties, and devices." Journal of Semiconductors 43, no. 9 (2022): 093101. http://dx.doi.org/10.1088/1674-4926/43/9/093101.

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Abstract Hyperdoping that introduces impurities with concentrations exceeding their equilibrium solubility has been attracting great interest since the tuning of semiconductor properties increasingly relies on extreme measures. In this review we focus on hyperdoped silicon (Si) by introducing methods used for the hyperdoping of Si such as ion implantation and laser doping, discussing the electrical and optical properties of hyperdoped bulk Si, Si nanocrystals, Si nanowires and Si films, and presenting the use of hyperdoped Si for devices like infrared photodetectors and solar cells. The perspe

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Ferguson, P. P., S. Gauvin, and N. Beaudoin. "On the importance of the MIS junction to the photovoltaic properties of ITO/TPD/Alq3/Al electroluminescent devices." Canadian Journal of Physics 91, no. 1 (2013): 60–63. http://dx.doi.org/10.1139/cjp-2012-0113.

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Organic electroluminescent devices with an ITO/TPD/Alq3/Al structure are fabricated and tested for their photovoltaic properties. To produce an open-circuit photovoltage, a conditioning is required. Here, the conditioning is exposing the device to air for a short duration. Without this conditioning, the device produces a short-circuit photocurrent with practically no open-circuit photovoltage. Calculations and fits to the photovoltaic data show that this observation could be attributed to the formation of a metal–insulator–semiconductor junction between the Alq3 and the Al, where an insulating

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Satta, Jessica, Andrea Pinna, Giorgio Pia, et al. "Stable CsPbBr3 Nanocrystals—Decorated Nanoporous Gold for Optoelectronic Applications." Crystals 12, no. 6 (2022): 863. http://dx.doi.org/10.3390/cryst12060863.

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Halide perovskite colloidal nanocrystals have recently gained much attention thanks to their superior stability compared with their bulk counterpart and to their unique optical properties. In this paper, two systems combining nanocrystals and nanoporous gold are studied to create an optimal metal semiconductor heterojunction that can be used in photocatalysis and photovoltaic devices. The perovskite degradation phenomenon is observed when the nanoporous gold powder is mixed into the hexane suspension of nanocrystals, while the charge separation efficiency is increased by synthesizing the nanoc

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Govindraju, S., N. Ntholeng, K. Ranganathan, M. J. Moloto, L. M. Sikhwivhilu, and N. Moloto. "The Effect of Structural Properties of Cu2Se/Polyvinylcarbazole Nanocomposites on the Performance of Hybrid Solar Cells." Journal of Nanomaterials 2016 (2016): 1–8. http://dx.doi.org/10.1155/2016/9592189.

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It has been said that substitution of fullerenes with semiconductor nanocrystals in bulk heterojunction solar cells can potentially increase the power conversion efficiencies (PCE) of these devices far beyond the 10% mark. However new semiconductor nanocrystals other than the potentially toxic CdSe and PbS are necessary. Herein we report on the synthesis of Cu2Se nanocrystals and their incorporation into polyvinylcarbazole (PVK) to form polymer nanocomposites for use as active layers in hybrid solar cells. Nearly monodispersed 4 nm Cu2Se nanocrystals were synthesized using the conventional col

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