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Journal articles on the topic 'Electrolyte-gated field-effect transistor (EG-FET)'

Author: Grafiati

Published: 5 June 2025

Last updated: 1 August 2025

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1

Massey, Roslyn, and Ravi Prakash. "Modeling the Double Layer Capacitance Effect in Electrolyte Gated FETs with Gel and Aqueous Electrolytes." Micromachines 12, no. 12 (2021): 1569. http://dx.doi.org/10.3390/mi12121569.

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Potential implementation of bio-gel Electrolyte Double Layer capacitors (bio-gel EDLCs) and electrolyte-gated FET biosensors, two commonly reported configurations of bio-electrolytic electronic devices, requires a robust analysis of their complex internal capacitive behavior. Presently there is neither enough of the parameter extraction literature, nor an effective simulation model to represent the transient behavior of these systems. Our work aims to supplement present transient thin film transistor modelling techniques with the reported parameter extraction method, to accurately model both b

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2

Zhang, Rong, Tiantian Hao, Shihui Hu, et al. "Electrolyte-Gated Graphene Field Effect Transistor-Based Ca2+ Detection Aided by Machine Learning." Sensors 23, no. 1 (2022): 353. http://dx.doi.org/10.3390/s23010353.

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Flexible electrolyte-gated graphene field effect transistors (Eg-GFETs) are widely developed as sensors because of fast response, versatility and low-cost. However, their sensitivities and responding ranges are often altered by different gate voltages. These bias-voltage-induced uncertainties are an obstacle in the development of Eg-GFETs. To shield from this risk, a machine-learning-algorithm-based LgGFETs’ data analyzing method is studied in this work by using Ca2+ detection as a proof-of-concept. For the as-prepared Eg-GFET-Ca2+ sensors, their transfer and output features are first measured

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3

Macchia, Eleonora, Alla Zak, Rosaria Anna Picca, et al. "Improved Performance p-type Polymer (P3HT) / n-type Nanotubes (WS2) Electrolyte Gated Thin-Film Transistor." MRS Advances 3, no. 27 (2018): 1525–33. http://dx.doi.org/10.1557/adv.2018.311.

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ABSTRACTThis work decribes the enhancement of the electrical figures of merit of an Electrolyte Gated Thin-Film Transistor (EG-TFT) comprising a nanocomposite of n-type tungsten disulfide (WS2) nanotubes (NTs) dispersed in a regio-regular p-type poly(3-hexylthiophene-2,5-diyl) (P3HT) polymeric matrix. P3HT/WS2 nanocomposites loaded with different concentrations of NTs, serving as EG-TFTs electronic channel materials have been studied and the formulation has been optimized. The resulting EG-TFTs figures of merit (field-effect mobility, threshold voltage and on-off ratio) are compared with those

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4

Patil, Prasanna D., Sujoy Ghosh, Milinda Wasala, et al. "Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11)." Electronics 8, no. 6 (2019): 645. http://dx.doi.org/10.3390/electronics8060645.

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Innovations in the design of field-effect transistor (FET) devices will be the key to future application development related to ultrathin and low-power device technologies. In order to boost the current semiconductor device industry, new device architectures based on novel materials and system need to be envisioned. Here we report the fabrication of electric double layer field-effect transistors (EDL-FET) with two-dimensional (2D) layers of copper indium selenide (CuIn7Se11) as the channel material and an ionic liquid electrolyte (1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6)) as

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Star, Alexander. "(Invited) Ultrasensitive Detection of Pathogens and Opioids with Carbon Nanotube-Based FET Biosensors." ECS Meeting Abstracts MA2025-01, no. 11 (2025): 954. https://doi.org/10.1149/ma2025-0111954mtgabs.

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The electrolyte-gated field-effect transistor (FET) based on semiconducting single-walled carbon nanotubes (SWCNTs) has emerged as a powerful platform for ultrasensitive biosensing. Tuberculosis (TB) remains a major global health challenge, causing 1.6 million deaths annually (4,300 daily), according to the World Health Organization (WHO). Early recognition of TB and drug resistance is crucial to mitigating its global burden. We developed an SWCNT-based FET point-of-care device for detecting Mycobacterium tuberculosis-specific antigen Ag85B in clinically relevant specimens such as sputum and s

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6

Martens, Koen, David Barge, Lijun Liu, et al. "(Invited) BioFETs and Nanopore FETs: Nanoscale Silicon Field-Effect Transistors for Single-Molecule Sensing." ECS Meeting Abstracts MA2023-01, no. 33 (2023): 1866. http://dx.doi.org/10.1149/ma2023-01331866mtgabs.

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High read throughput single-molecule sensing is a cornerstone of established third generation long-read DNA sequencing technologies and is crucial for emerging protein sequencing technologies. These omics technologies are of great interest for essential understanding and applications in the life sciences. Field Effect Transistor (FET)-based single-molecule sensors promise advances in omics, by further enhancing read throughput with massive parallelization. Here an overview is given of our recent progress on nanoscale bioFETs and nanopore FETs (NPFETs). A bioFET is a FET gated by a liquid elect

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7

Tintelott, Marcel, Tom Kremers, Sven Ingebrandt, Vivek Pachauri, and Xuan Thang Vu. "Realization of a PEDOT:PSS/Graphene Oxide On-Chip Pseudo-Reference Electrode for Integrated ISFETs." Sensors 22, no. 8 (2022): 2999. http://dx.doi.org/10.3390/s22082999.

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A stable reference electrode (RE) plays a crucial role in the performance of an ion-sensitive field-effect transistor (ISFET) for bio/chemical sensing applications. There is a strong demand for the miniaturization of the RE for integrated sensor systems such as lab-on-a-chip (LoC) or point-of-care (PoC) applications. Out of several approaches presented so far to integrate an on-chip electrode, there exist critical limitations such as the effect of analyte composition on the electrode potential and drifts during the measurements. In this paper, we present a micro-scale solid-state pseudo-refere

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8

Star, Alexander. "(Invited) Application of Machine Learning in Carbon Nanotube-Based Biosensors." ECS Meeting Abstracts MA2023-01, no. 9 (2023): 1142. http://dx.doi.org/10.1149/ma2023-0191142mtgabs.

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Among electrochemical sensors, electrolyte-gated field-effect transistor (FET) with semiconducting single-walled carbon nanotubes (SWCNTs) is one of the most promising choices for the ultrasensitive biosensors. The biosensing is typically based on the recognition of analytes with capture probes (antibody, aptamer, receptor, enzyme, etc.) attached to SWCNTs. While the capture probes improve the chemical sensitivity and selectivity, the stability of the nanotube-based biosensors is limited by the activity of the capture probes. Another approach involves sensor arrays with different metal nanopar

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9

Hanim Hussin, Yasmin Abdul Wahab, Norhayati Soin, and Maizan Muhamad. "Investigation on Sensitivity Amplification Factor of DGFET Electrochemical Sensors for pH Detection." International Journal of Nanoelectronics and Materials (IJNeaM) 16, DECEMBER (2023): 195–205. http://dx.doi.org/10.58915/ijneam.v16idecember.404.

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There has been an increasing interest in the development of chemical and biological FET- based sensors due to their remarkable benefits in label-free detection that has been commonly used in both pH and DNA sensing respectively. In this work, recent Double-Gated Field Effect Transistor (DGFET) as transducers is investigated to understand the super- Nernstian response by amplifying the sensitivity capability in back-gate operations. The BioSensorLab tool was employed to evaluate pH-sensitivity amplification by studying the electrolyte screening and conduction modulation mechanisms which modeled

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10

Katayama, Ritsu, and Toshiya Sakata. "Simple Fabrication Method for Solution-gated One-piece Transistors for Biosensing Applications." ECS Meeting Abstracts MA2023-01, no. 34 (2023): 1918. http://dx.doi.org/10.1149/ma2023-01341918mtgabs.

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INTRODUCTION Solution-gated field-effect transistors (FETs) with silicon or other semiconductive materials as channels can specifically and selectively detect ions and biomolecules related to biological functions by chemically modifying the gate electrode surface, and these are known as biologically coupled FETs (Bio-FETs) [1]. Since Bio-FETs can directly detect the charges of ions and biomolecules, they do not require to label fluorescent dyes and to induce redox reactions based on enzymes. Therefore, Bio-FETs are expected to be used as in vitro diagnostic devices for a label-free monitoring

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Ogurcovs, Andrejs, Kevon Kadiwala, Eriks Sledevskis, Marina Krasovska, Ilona Plaksenkova, and Edgars Butanovs. "Effect of DNA Aptamer Concentration on the Conductivity of a Water-Gated Al:ZnO Thin-Film Transistor-Based Biosensor." Sensors 22, no. 9 (2022): 3408. http://dx.doi.org/10.3390/s22093408.

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Field-effect transistor-based biosensors (bio-FETs) are promising candidates for the rapid high-sensitivity and high-selectivity sensing of various analytes in healthcare, clinical diagnostics, and the food industry. However, bio-FETs still have several unresolved problems that hinder their technological transfer, such as electrical stability. Therefore, it is important to develop reliable, efficient devices and establish facile electrochemical characterization methods. In this work, we have fabricated a flexible biosensor based on an Al:ZnO thin-film transistor (TFT) gated through an aqueous

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Milroy, Craig, and Steve Kim. "Expanding the Materials Palette for Organic Electrochemical Transistor Channels Via Electropolymerization and Functionalized Pyrrole, Thiophene, and Aniline Monomers." ECS Meeting Abstracts MA2024-01, no. 31 (2024): 1539. http://dx.doi.org/10.1149/ma2024-01311539mtgabs.

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Electrochemical transistors are electrolyte-gated devices that permit large signal amplification, ionic-to-electronic signal transduction, and controlled variable resistance. Given that their porous channel materials enable volumetric interaction with the adjacent electrolyte, OECT offer increased detection sensitivity compared to other electrolyte-gated devices such as field-effect transistors (FET). Although these OECT devices have demonstrated utility in a wide range of applications, from neuromorphic computing platforms to bioelectronic devices, they are still in an early stage of developm

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Mirka, Brendan, Jianfu Ding, and Francois Lapointe. "(Invited) Gold Nanoparticle-Decorated Carbon Nanotubes for Electronic Sensing in Physiological Media." ECS Meeting Abstracts MA2025-01, no. 11 (2025): 955. https://doi.org/10.1149/ma2025-0111955mtgabs.

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Physiological media (e.g., sweat, saliva, serum) contain several chemical and biological biomarkers which can be diagnostic of certain diseases or overall health condition. Because of the media’s high ionic content (~100 mM), an electrical double layer (EDL) is established with a very short Debye length, λD < 1 nm. Beyond λD, it is generally accepted that an electric charge is screened and cannot be sensed at the electrode. Typical strategies for electronic sensing in high ionic strength media include grafting a permeable polymer such as polyethylene glycol (PEG) to the sensor’s surface [1]

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PERALTA, XOMALIN, and WOJTEK KNAP. "THz DETECTION BY RESONANT 2-D PLASMONS IN FIELD EFFECT DEVICES." International Journal of High Speed Electronics and Systems 12, no. 02 (2002): 491–500. http://dx.doi.org/10.1142/s012915640200140x.

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We demonstrate the resonant detection by the two-dimensional electron plasma waves in gated two-dimensional electron gas. Such detection was demonstrated for two devices: for a field effect transistor (FET) THz detector, where the standing 2-D plasmon is tuned to the frequency of the THz radiation by varying the gate bias and for double quantum well field effect transistors with a periodic grating gate, which exhibit a rich spectrum corresponding to standing 2-D plasmons under the metal part of the periodic gate.

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Ye, Jianting, Yijin Zhang, and Yoshihiro Iwasa. "Ambipolar transport in MoS2 based electric double layer transistors." MRS Proceedings 1549 (2013): 73–78. http://dx.doi.org/10.1557/opl.2013.792.

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ABSTRACTMaking field effect transistors (FETs) on thin flake of single crystal isolated from layered materials was pioneered by the success of graphene. To overcome the difficulties of the zero band gap in graphene electronics, we report the fabrication of an electric double layer (EDL) transistor, a variant of FET, based on another layered material, MoS2. Using strong carrier tunability found in EDL coupled by ion movement, MoS2 transistor displayed an unambiguously ambipolar operation in addition to its commonly observed n-type transport. A high on/off ratio >104, large “ON” state conduct

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Ozkan, Cengiz Sinan. "(Invited) Bilayer Molybdenum Disulfide Strain Controlled Field Effect Transistor." ECS Meeting Abstracts MA2024-02, no. 35 (2024): 2431. https://doi.org/10.1149/ma2024-02352431mtgabs.

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Silicon nitride stress capping layers are pivotal in the semiconductor industry for their role in enhancing electron mobility and driving currents in n-channel silicon MOSFETs. This research delves into the effects of silicon nitride-induced strain on the electronic properties of bilayer Molybdenum Disulfide (MoS2), a promising two-dimensional semiconductor. We first examine the modifications in the photoluminescence and Raman spectra of bare bilayer MoS2 under strain. By depositing a silicon nitride stress liner on a bilayer MoS2 field effect transistor (FET), which impacts both the gate and

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17

Nanda, B. S., and P. S. Puttaswamy. "Modeling and simulation of graphene field effect transistor (GFET)." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 6 (2019): 4826–35. https://doi.org/10.11591/ijece.v9i6.pp4826-4835.

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Graphene based top-gated Field effect transistor (GFET) is designed and simulated using the device simulator packages. The paper describes fabrication process and the device simulation aspects of the GFET device. Two devices with different gate lengths of 200nm and 350nm are simulated. Device simulations are carried out in open source TCAD software package. The results indicate a depletion FET type operation in which ON/OFF current ratio of 2.25 is obtained.

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18

Petrov, Aleksandr S., D. Svintsov, M. Rudenko, V. Ryzhii, and M. S. Shur. "Plasma Instability of 2D Electrons in a Field Effect Transistor with a Partly Gated Channel." International Journal of High Speed Electronics and Systems 25, no. 03n04 (2016): 1640015. http://dx.doi.org/10.1142/s0129156416400152.

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We predict the instability of plasma waves excited by a DC current in the field-effect transistors (FETs) with a partly gated channel. The excitation of plasma waves is due to amplified reflection from the boundary of the gated and ungated regions. The boundary also supports the turbulent edge modes whose increment strongly depends on the ratio of the carrier densities in the two FET regions.

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19

Liu, Hong Zhong, Wei Hua Liu, Jun Hua Liu, and Xin Li. "Three-Dimensional Micro-Channel Structure of Graphene Field-Effect Transistor." Advanced Materials Research 291-294 (July 2011): 3112–15. http://dx.doi.org/10.4028/www.scientific.net/amr.291-294.3112.

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Graphene, comprising of monolayer of carbon atoms packed into a two-dimensional honeycomb lattice, has a series of peculiar properties such as the anomalously quantized Hall effects, the large charge carrier mobility and so on. Both micromechanical cleavage method and hydrazine reduction process are used to produce graphene sheet. Two kinds of graphene pattern have been placed between the source and the drain electrodes of a new type of combined three dimensional back-gated FET as the channel by location transplantation method. Micromechanical cleavage method can produce graphene which has uni

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20

Ogurcovs, Andrejs, Kevon Kadiwala, Eriks Sledevskis, Marina Krasovska, and Valdis Mizers. "Glyphosate Sensor Based on Nanostructured Water-Gated CuO Field-Effect Transistor." Sensors 22, no. 22 (2022): 8744. http://dx.doi.org/10.3390/s22228744.

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This research presents a comparative analysis of water-gated thin film transistors based on a copper oxide (CuO) semiconductor in the form of a smooth film and a nanostructured surface. A smooth CuO film was deposited through reactive magnetron sputtering followed by annealing in atmosphere at a temperature of 280 ∘C. Copper oxide nanostructures were obtained by hydrothermal synthesis on a preliminary magnetron sputtered 2 nm thick CuO precursor followed by annealing at 280 ∘C. An X-ray diffraction (XRD) analysis of the samples revealed the presence of a tenorite (CuO) phase with a predominant

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Rogdakis, Konstantinos, Edwige Bano, Laurent Montes, Mikhael Bechelany, David Cornu, and Konstantinos Zekentes. "Schottky Barrier 3C-SiC Nanowire Field Effect Transistor." Materials Science Forum 679-680 (March 2011): 613–16. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.613.

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Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowire (NW) were fabricated. Devices with rectifying Source (S) and Drain (D) contacts have been observed. In contrast with the ohmic-like devices reported in the literature, the Schottky contact barrier (SB) at S/ D regions acts beneficially for the FET performance by suppressing the off-current. At high positive gate voltages (>10 V), the Schottky barriers tend to be more transparent leading to ION/IOFF ratio equal to ~ 103 in contrast to the weak gating effect of the ohmic-contacted 3C-SiC NWFETs.

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S., Nanda B., and Puttaswamy P. S. "Modeling and simulation of graphene field effect transistor (GFET)." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 6 (2019): 4826. http://dx.doi.org/10.11591/ijece.v9i6.pp4826-4835.

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<p><span>Graphene based top-gated Field effect transistor (GFET) is designed and simulated using the device simulator packages. The paper describes fabrication process and the device simulation aspects of the GFET device. Two devices with different gate lengths of 200nm and 350nm are simulated. Device simulations are carried out in open source TCAD software package. The results indicate a depletion FET type operation in which ON/OFF current ratio of 2.25 is obtained.</span></p>

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WANG, YANGYANG, JIAXIN ZHENG, ZEYUAN NI, et al. "HALF-METALLIC SILICENE AND GERMANENE NANORIBBONS: TOWARDS HIGH-PERFORMANCE SPINTRONICS DEVICE." Nano 07, no. 05 (2012): 1250037. http://dx.doi.org/10.1142/s1793292012500373.

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By using first-principles calculations, we predict that an in-plane homogenous electrical field can induce half-metallicity in hydrogen-terminated zigzag silicene and germanene nanoribbons ( ZSiNRs and ZGeNRs ). A dual-gated finite ZSiNR device reveals a nearly perfect spin-filter efficiency (SFE) of up to 99% while a quadruple-gated finite ZSiNR device serves as an effective spin field effect transistor (FET) with an on/off current ratio of over 100 from ab initio quantum transport simulation. This discovery opens up novel prospect of silicene and germanene in spintronics.

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Chowdhury, Md. Iqbal Bahar. "Study of Characteristics Curves Top-Gated Graphene FET Using SILVACO TCAD." Journal of Electronic Design Engineering 3, no. 3 (2017): 1–9. https://doi.org/10.5281/zenodo.15319750.

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This work presents a SILVACO TCAD based fabrication and device simulation of a topgated graphene field-effect transistor. Effects of channel length and channel doping concentrations on the characteristics curves (transfer and output characteristics) of the GFET are also investigated and analyzed physically to obtain more physical insight. 

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Ertop, Ozan, Bedri Gurkan Sonmez, and Senol Mutlu. "Displacement Sensor with Inherent Read-Out Circuit Using Water-Gated Field Effect Transistor (WG-FET)." Proceedings 2, no. 13 (2018): 926. http://dx.doi.org/10.3390/proceedings2130926.

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This paper presents, for the first time, a displacement sensor with inherent read-out circuit using an inverter built with WG-FET that has 16-nm-thick single crystalline silicon film. In WG-FET, electrical double layer (EDL) capacitances are formed at water/silicon and water/top gate interfaces. These two capacitances and the resistance of the de-ionized (DI) water droplet build a first order RC network. Propagation delay of an inverter built with WG-FET depends on this RC constant. When the distance between top gate and silicon film changes, EDL capacitances remain the same, but resistance of

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Ju, Wonbin, and Sungbae Lee. "Al back-gated graphene field-effect transistors for capacitive sensing applications based on quantum capacitance effect." AIP Advances 12, no. 9 (2022): 095210. http://dx.doi.org/10.1063/5.0101754.

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We report a new device design of a graphene field-effect transistor (G-FET) for capacitive sensing application. A channel area exposed to ambient conditions in G-FET is known to be a promising candidate for molecular level sensing applications because graphene can attract certain molecules with its freely hanging sigma bonds. In addition, molecules that adhere to graphene act as impurities that affect the electron transport within graphene. Two of the most common ways to evaluate such a change are measuring the changes in resistance and in quantum capacitance. Previous research studies have be

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Song, Meng, Cheng Ju, and Yun Fang Jia. "Influence of ssDNA Immobilization on the Conductance of Solution Gated Graphene Transistors." Advanced Materials Research 830 (October 2013): 302–5. http://dx.doi.org/10.4028/www.scientific.net/amr.830.302.

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Carboxyl-modified graphene materials in both oxide and reduced state were explored in parallel for the preparation of field-effect transistors (FET). They were solution gated by phosphate buffer solution (PBS) (pH 7.2). Their conductance were examined and compared with unmodified graphene transistors, firstly. Then, after single strand DNA molecules were immobilized on reduced and oxide graphene transistors, their conductance and compared. Here ssDNA molecules were amino-tagged at the terminal five. It was found that ambipolar characteristic was exhibited by reduced graphene transistors, even

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Kou, Cuiyun, Xiaofeng Xu, Yu Bao, Zhinan Guo, and Li Niu. "Liquid-Gated Graphene Field Effect Transistor for High-Performance Label-Free Sensing of Polycyclic Aromatic Hydrocarbons." Chemosensors 13, no. 2 (2025): 56. https://doi.org/10.3390/chemosensors13020056.

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Polycyclic aromatic hydrocarbons (PAHs) are one of the most toxic environmental pollutants, which are very harmful to the human body. It is crucial to find convenient and effective detection methods of PAHs for preventing and controlling environmental pollution. Low-dimensional material-based field effect transistor (FET) sensors exhibit the advantages of a small size, simple structure, fast response, and high sensitivity. In this work, graphene (Gr) has been selected as the channel material for FET sensors for PAH detections. Through π-π electron stacking interactions, PAHs could be spontaneo

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Wani, Sumayah Shakil, Yao-Zen Kuo, K. M. M. D. K. Kimbulapitiya, and Yu-Lun Chueh. "(Digital Presentation) Improving Field-Effect Transistor Performance through Pulsed Laser Irradiation-Mediated MoS2-Metal Contact Engineering." ECS Meeting Abstracts MA2023-02, no. 30 (2023): 1565. http://dx.doi.org/10.1149/ma2023-02301565mtgabs.

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Two-dimensional (2D) layered materials, such as MoS2, with their atomically thin characteristics, offer promising novel solutions for the field of nanoelectronics. MoS2 has been identified as a prospective building block for flexible and transparent nanoelectronics in the future, and has the potential to contribute to the continuation of Moore's law by enabling high integration levels with low power consumption. Although the use of 2D semiconductor materials as contact interfaces presents advantages over conventional Si-based metal-semiconductor contacts practical applications still face sever

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Lee, Myeongsoon, Seong H. Kim, Don Kim, and Hak Jun Kim. "Rapid and Easy Detection of Microcystin-LR Using a Bioactivated Multi-Walled Carbon Nanotube-Based Field-Effect Transistor Sensor." Biosensors 14, no. 1 (2024): 37. http://dx.doi.org/10.3390/bios14010037.

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In this study, we developed a multi-walled carbon nanotube (MWCNT)-based field-effect transistor (MWCNT-FET) sensor with high sensitivity and selectivity for microcystin-LR (MC-LR). Carboxylated MWCNTs were activated with an MC-LR-targeting aptamer (MCTA). Subsequently the bioactivated MWCNTs were immobilized between interdigitated drain (D) and source (S) electrodes through self-assembly. The top-gated MWCNT-FET sensor was configured by dropping the sample solution onto the D and S electrodes and immersing a Ag/AgCl electrode in the sample solution as a gate (G) electrode. We believe that the

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Kim, Dae Hoon, Woo Hwan Park, Hong Gi Oh, Dong Cheol Jeon, Joon Mook Lim, and Kwang Soup Song. "Two-Channel Graphene pH Sensor Using Semi-Ionic Fluorinated Graphene Reference Electrode." Sensors 20, no. 15 (2020): 4184. http://dx.doi.org/10.3390/s20154184.

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A reference electrode is necessary for the working of ion-sensitive field-effect transistor (ISFET)-type sensors in electrolyte solutions. The Ag/AgCl electrode is normally used as a reference electrode. However, the Ag/AgCl reference electrode limits the advantages of the ISFET sensor. In this work, we fabricated a two-channel graphene solution gate field-effect transistor (G-SGFET) to detect pH without an Ag/AgCl reference electrode in the electrolyte solution. One channel is the sensing channel for detecting the pH and the other channel is the reference channel that serves as the reference

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Lu, Jian, Naoki Shiraishi, Ryo Imaizumi, Lan Zhang, and Mutsumi Kimura. "Process Development of a Liquid-Gated Graphene Field-Effect Transistor Gas Sensor for Applications in Smart Agriculture." Sensors 24, no. 19 (2024): 6376. http://dx.doi.org/10.3390/s24196376.

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A compact, multi-channel ionic liquid-gated graphene field-effect transistor (FET) has been proposed and developed in our work for on-field continuous monitoring of nitrate nitrogen and other nitrogen fertilizers to achieve sustainable and efficient farming practices in agriculture. However, fabricating graphene FETs with easy filling of ionic liquids, minimal graphene defects, and high process yields remains challenging, given the sensitivity of these devices to processing conditions and environmental factors. In this work, two approaches for the fabrication of our graphene FETs were presente

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CHILCOTT, TERRY C., HANS G. L. COSTER, and TILL BÖCKING. "ORGANIC-SILICON INTERFACE." Biophysical Reviews and Letters 02, no. 02 (2007): 191–205. http://dx.doi.org/10.1142/s1793048007000489.

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A review of the performances of existing field-effect-transistor (FET) based biosensing devices and reports of fundamental studies of FET structures in a planar geometry identify substantial amplification improvements in eliminating metal intermediaries between the biorecognitive surfaces and the silicon channels, reducing thicknesses of insulating gates and selecting channel apertures that are comparable with achievable thicknesses of depletion layers. Exemplary improvements have been achieved in FET-based silicon nano-wires in which biorecognitive surfaces were attached to the oxidized surfa

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Lin, Chia Kai, Chia-Che Wu, Akhil Kavanal Paulose, et al. "Electric-Double-Layer (EDL)-Gated FET Aptasensors for Highly Sensitive MMP7 Detection." ECS Transactions 111, no. 3 (2023): 45–48. http://dx.doi.org/10.1149/11103.0045ecst.

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Biliary Atresia (BA) is a severe liver disease that affects newborns. This disease may cause cholestasis and progressive hepatic failure or even death if not treated immediately. ELISA blood tests for metabolic screening are the current method of diagnosing BA. However, Newborns need rapid BA detection for treatment in the future. Level increase of intrahepatic matrix metalloproteinase-7 (MMP7) is a factor known to cause BA-related liver fibrosis. We brought out a platform to detect BA using an electric-double-layer (EDL)-gated field-effect transistor (FET). MMP7 concentration differences affe

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Wu, Chia-Yu, Han-Yi Cheng, Keng-Liang Ou, and Chi-Chang Wu. "Real-time sensing of hepatitis B virus X gene using an ultrasensitive nanowire field effect transistor." Journal of Polymer Engineering 34, no. 3 (2014): 273–77. http://dx.doi.org/10.1515/polyeng-2013-0216.

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Abstract Devices based on semiconducting nanowires (NWs) are functioning as highly sensitive and selective sensors for the label-free detection of biological and chemical species. This paper demonstrates a novel back-gated silicon NW field effect transistor (NWFET) for gene detection. The fabricated NWFET was employed as the biomolecule sensor for the early, real-time, and label-free screening of hepatitis B virus (HBV) X gene. The DNA fragment in HBV demonstrates the linearity from 10 fM to 1 pM, of which the detection limit is estimated to be about 3.2 fM. The obtained results also show that

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Laudari, Amrit, Shubhra Gangopadhyay, and Suchismita Guha. "Polarization-Induced Transport: A Comparative Study of Ferroelectric and Non-Ferroelectric Dielectric-Gated Organic Field-Effect Transistors." MRS Advances 2, no. 51 (2017): 2951–56. http://dx.doi.org/10.1557/adv.2017.324.

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ABSTRACTA comparative study of ferroelectric and non-ferroelectric-gated organic field-effect transistors (FETs) have been carried out by using a small molecule semiconductor 6,13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) to understand the fundamental aspects of carrier transport in FET architectures. Temperature-dependent current-voltage characteristics from non-ferroelectric dielectric-gated FETs show a clear activated transport, independent of the dielectric constant. While using the ferroelectric dielectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE), whe

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Mathew, Sobin, Johannes Reiprich, Shilpashree Narasimha, et al. "Three-Dimensional MoS2 Nanosheet Structures: CVD Synthesis, Characterization, and Electrical Properties." Crystals 13, no. 3 (2023): 448. http://dx.doi.org/10.3390/cryst13030448.

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The proposed study demonstrates a single-step CVD method for synthesizing three-dimensional vertical MoS2 nanosheets. The postulated synthesizing approach employs a temperature ramp with a continuous N2 gas flow during the deposition process. The distinctive signals of MoS2 were revealed via Raman spectroscopy study, and the substantial frequency difference in the characteristic signals supported the bulk nature of the synthesized material. Additionally, XRD measurements sustained the material’s crystallinity and its 2H-MoS2 nature. The FIB cross-sectional analysis provided information on the

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Yan, Lidan, Yang Zhang, Zhibiao Zhu, Yuqi Liang, and Mengmeng Xiao. "Robust Carbon Nanotube Transistor Ion Sensors with Near-Nernstian Sensitivity for Multi-Ion Detection in Neurological Diseases." Nanomaterials 15, no. 6 (2025): 447. https://doi.org/10.3390/nano15060447.

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Accurate monitoring of sodium and potassium ions in biological fluids is crucial for diseases related to electrolyte imbalance. Low-dimensional materials such as carbon nanotubes can be used to construct biochemical sensors based on high-performance field effect transistor (FET), but they face the problems of poor device consistency and difficulty in stable and reliable operation. In this work, we mass-produced carbon nanotube (CNT) floating-gate field-effect transistor devices with high uniformity and consistency through micro-/nanofabrication technology to improve the accuracy and reliabilit

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Lan, Yi, Sidra Farid, Xenia Meshik, et al. "Detection of Immunoglobulin E with a Graphene-Based Field-Effect Transistor Aptasensor." Journal of Sensors 2018 (July 22, 2018): 1–8. http://dx.doi.org/10.1155/2018/3019259.

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DNA aptamers have the ability to bind to target molecules with high selectivity and therefore have a wide range of clinical applications. Herein, a graphene substrate functionalized with a DNA aptamer is used to sense immunoglobulin E. The graphene serves as the conductive substrate in this field-effect-transistor-like (FET-like) structure. A voltage probe in an electrolyte is used to sense the presence of IgE as a result of the changes in the charge distribution that occur when an IgE molecule binds to the IgE DNA-based aptamer. Because IgE is an antibody associated with allergic reactions an

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Giannazzo, Filippo, Corrado Bongiorno, Salvatore di Franco, Emanuele Rimini, and Vito Raineri. "Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001)." Materials Science Forum 717-720 (May 2012): 637–40. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.637.

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The electrical properties of epitaxial graphene (EG) grown on 8° off-axis 4H-SiC (0001) by annealing at 1600 °C in inert gas ambient (Ar) were studied. The sheet resistance of the EG layers (Rsh=740±50Ω/sq) and the specific contact resistance of Ni contacts to EG (ρc≈6x10-5Ωcm2) were evaluated on micrometer scale by measurements on transmission line model (TLM) structures. Si3N4was evaluated as a gate dielectric, showing excellent coverage to EG and a limited effect on its conductivity. The high n-type doping (~1013cm-2) of EG, as well as the field effect mobility (μ) dependence on n were dete

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Shiraishi, Naoki, Jian Lu, Fatin Bazilah Fauzi, et al. "Basic Characteristics of Ionic Liquid-Gated Graphene FET Sensors for Nitrogen Cycle Monitoring in Agricultural Soil." Biosensors 15, no. 1 (2025): 55. https://doi.org/10.3390/bios15010055.

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Nitrogen-based fertilizers are crucial in agriculture for maintaining soil health and increasing crop yields. Soil microorganisms transform nitrogen from fertilizers into NO3−–N, which is absorbed by crops. However, some nitrogen is converted to nitrous oxide (N2O), a greenhouse gas with a warming potential about 300-times greater than carbon dioxide (CO2). Agricultural activities are the main source of N2O emissions. Monitoring N2O can enhance soil health and optimize nitrogen fertilizer use, thereby supporting precision agriculture. To achieve this, we developed ionic liquid-gated graphene f

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Hung, Sheng-Chun, Chia-Chi Chen, Yu-Cheng Lin, and Chung-Wei Lin. "(Invited) Non-Enzymatic Glucose Sensor Fabricated By Ni-Nanowires Decorated Graphene Gated FETs." ECS Transactions 111, no. 3 (2023): 55–61. http://dx.doi.org/10.1149/11103.0055ecst.

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In this study, an innovative non-invasive glucose sensor made of nickel nanowire-decorated graphene-gated field-effect transistors is demonstrated. Due to the redox reaction between nickel nanowires and glucose molecules, electron exchange occurs when Ni(III) reacts with glucose to form Ni(II) and gluconolactone. Changes in electron concentration are amplified by transistors at the bottom, improving detection sensitivity. In this study, the electrical properties of glucose sensor fabricated from nickel nanowire/graphene/gold surfaces was studied. Since the CVD-grown graphene film has excellent

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Kelley, Robin L., Michael S. Mazzola, and William L. Draper. "Improved Efficiency in Power Factor Correction Circuits with a pn-Gated SiC FET." Materials Science Forum 556-557 (September 2007): 995–98. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.995.

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The purpose of this paper is to present an all-SiC switched AC-DC converter using active power factor correction. The typical boost-converter approach is employed using continuous conduction mode. A SiC Schottky barrier diode performs the free-wheeling diode function, and a 600 V, 0.12 % SiC vertical junction field effect transistor performs the switching function under the control of a Fairchild ML4821 integrated circuit. The converter is operable off-line over the full universal voltage range (85-260 VAC), but it was optimized for a 400-600 W application operating at 208 VAC. Results are pre

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Thokchom, Rohan, Yi-De Su, Huan-Wei Tseng, et al. "Developing Field Effect Transistor Sensors Based on DNA Probes to Detect Staphylococcus Lugdunensis Bacteria." ECS Meeting Abstracts MA2024-01, no. 33 (2024): 1645. http://dx.doi.org/10.1149/ma2024-01331645mtgabs.

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The goal of this research is to work with an Electrical Double Layer (EDL)-gated Field Effect Transistor (FET) to detect the bacteria Staphylococcus lugdunensis, which can cause a variety of illnesses, including infections of the skin and soft tissues. In rare cases, Staphylococcus lugdunensis can be successfully identified using the combination of a positive catalase test, a negative tube coagulase test, a positive PYR test, and a positive ornithine decarboxylase test. We are employing an Electrical Double Layer (EDL)-gated Field Effect Transistor (FET) to speed up the procedure because this

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Li, Xin, Junjie Shi, Junchao Pang, Weihua Liu, Hongzhong Liu, and Xiaoli Wang. "Graphene Channel Liquid Container Field Effect Transistor as pH Sensor." Journal of Nanomaterials 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/547139.

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Graphene channel liquid container field effect transistor pH sensor with interdigital microtrench for liquid ion testing is presented. Growth morphology and pH sensing property of continuous few-layer graphene (FLG) and quasi-continuous monolayer graphene (MG) channels are compared. The experiment results show that the source-to-drain current of the graphene channel FET has a significant and fast response after adsorption of the measured molecule and ion at the room temperature; at the same time, the FLG response time is less than 4 s. The resolution of MG (0.01) on pH value is one order of ma

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Icin, Izthak, Asaf Avnon, and Sefi Vernick. "(Invited) Engineering Molecular Interfaces on CNT FETs for Chemical and Biological Sensing." ECS Meeting Abstracts MA2025-01, no. 11 (2025): 957. https://doi.org/10.1149/ma2025-0111957mtgabs.

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Carbon nanotube field-effect transistor (CNT FET) sensors have emerged as a versatile platform for chemical and biological detection due to their exceptional electronic properties, high sensitivity, and compatibility with micro- and nanofabrication techniques. Our work explores these unique features to develop advanced biosensing devices for environmental monitoring, agricultural diagnostics, and defense applications. We engineered CNT FETs functionalized with a diverse range of molecular probes, including ligand-gated ion channels such as mosquito odorant receptors, DNA aptamers, and metal-io

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Kudriavtseva, Anastasiia, Stefan Jarić, Nikita Nekrasov, et al. "Comparative Study of Field-Effect Transistors Based on Graphene Oxide and CVD Graphene in Highly Sensitive NT-proBNP Aptasensors." Biosensors 14, no. 5 (2024): 215. http://dx.doi.org/10.3390/bios14050215.

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Graphene-based materials are actively being investigated as sensing elements for the detection of different analytes. Both graphene grown by chemical vapor deposition (CVD) and graphene oxide (GO) produced by the modified Hummers’ method are actively used in the development of biosensors. The production costs of CVD graphene- and GO-based sensors are similar; however, the question remains regarding the most efficient graphene-based material for the construction of point-of-care diagnostic devices. To this end, in this work, we compare CVD graphene aptasensors with the aptasensors based on redu

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Kuo, Wen-Che, Indu Sarangadharan, Anil Pulikkathodi, et al. "Investigation of Electrical Stability and Sensitivity of Electric Double Layer Gated Field-Effect Transistors (FETs) for miRNA Detection." Sensors 19, no. 7 (2019): 1484. http://dx.doi.org/10.3390/s19071484.

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In this research, we developed a miRNA sensor using an electrical double layer (EDL) gated field-effect transistor (FET)-based biosensor with enhanced sensitivity and stability. We conducted an in-depth investigation of the mechanisms that give rise to fluctuations in the electrical signal, affecting the stability and sensitivity of the miRNA sensor. Firstly, surface characteristics were studied by examining the metal electrodes deposited using different metal deposition techniques. The lower surface roughness of the gold electrode improved the electrical current stability. The temperature and

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Saidov, Kamoladdin, Jamoliddin Razzokov, Odilkhuja Parpiev, et al. "Formation of Highly Conductive Interfaces in Crystalline Ionic Liquid-Gated Unipolar MoTe2/h-BN Field-Effect Transistor." Nanomaterials 13, no. 18 (2023): 2559. http://dx.doi.org/10.3390/nano13182559.

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2H MoTe2 (molybdenum ditelluride) has generated significant interest because of its superconducting, nonvolatile memory, and semiconducting of new materials, and it has a large range of electrical properties. The combination of transition metal dichalcogenides (TMDCs) and two dimensional (2D) materials like hexagonal boron nitride (h-BN) in lateral heterostructures offers a unique platform for designing and engineering novel electronic devices. We report the fabrication of highly conductive interfaces in crystalline ionic liquid-gated (ILG) field-effect transistors (FETs) consisting of a few l

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Dey, Anubhab, Wenjing Yan, Nilanthy Balakrishnan, et al. "Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP₂S₆." 2D Materials 9, no. 3 (2022): 035003. http://dx.doi.org/10.1088/2053-1583/ac6191.

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Abstract Ferroelectricity at the nanometre scale can drive the miniaturisation and wide application of ferroelectric devices for memory and sensing applications. The two-dimensional van der Waals (2D-vdWs) ferroelectrics CuInP2S6 (CIPS) has attracted much attention due to its robust ferroelectricity found in thin layers at room temperature. Also, unlike many 2D ferroelectrics, CIPS is a wide band gap semiconductor, well suited for use as a gate in field-effect transistors (FETs). Here, we report on a hybrid FET in which the graphene conducting channel is gated through a CIPS layer. We reveal h

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