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Journal articles on the topic 'Electrolyte gated transistors'

Author: Grafiati

Published: 5 June 2025

Last updated: 15 July 2025

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1

Piro, Benoit, Jérémy le Gall, Roberta Brayner, Giorgio Mattana, and Vincent Noël. "Driving Electrolyte-Gated Organic Field-Effect Transistors with Redox Reactions." Proceedings 60, no. 1 (2020): 31. http://dx.doi.org/10.3390/iecb2020-07049.

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Organic electrochemical transistors (OECTs) are now well-known, robust and efficient as amplification devices for redox reactions, typically biologically ones. In contrast, electrolyte-gated organic field-effect transistors (EGOFETs) have never been described for that kind of application because field-effect transistors are known as capacitive coupled devices, i.e., driven by changes in capacitance at the electrolyte/gate or electrolyte/semiconductor interface. For such a kind of transistors, any current flowing at the gate electrode is seen as a drawback. However, we demonstrate in this paper that not only the gate potential can trigger the source-drain current of EGOFETs, which is the generally accepted mode of operation, but that the current flowing at the gate can also be used. Because EGOFETs can work directly in water, and as an example of application, we demonstrate the possibility to monitor microalgae photosynthesis through the direct measurement of photosynthetic O2 production within the transistor’s electrolyte, thanks to its electroreduction on the EGOFET’s gate. This paves the way for the use of EGOFETs for environmental monitoring.

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2

Xie, Dongyu, Xiaoci Liang, Di Geng, Qian Wu, and Chuan Liu. "An Enhanced Synaptic Plasticity of Electrolyte-Gated Transistors through the Tungsten Doping of an Oxide Semiconductor." Electronics 13, no. 8 (2024): 1485. http://dx.doi.org/10.3390/electronics13081485.

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Oxide electrolyte-gated transistors have shown the ability to emulate various synaptic functions, but they still require a high gate voltage to form long-term plasticity. Here, we studied electrolyte-gated transistors based on InOx with tungsten doping (W-InOx). When the tungsten-to-indium ratio increased from 0% to 7.6%, the memory window of the transfer curve increased from 0.2 V to 2 V over a small sweep range of −2 V to 2.5 V. Under 50 pulses with a duty cycle of 2%, the conductance of the transistor increased from 40-fold to 30,000-fold. Furthermore, the W-InOx transistor exhibited improved paired pulse facilitation and successfully passed the Pavlovian test after training. The formation of WO3 within InOx and its ion intercalation into the channel may account for the enhanced synaptic plasticity.

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3

Qiu, Haiyang, Dandan Hao, Hui Li, et al. "Transparent and biocompatible In₂O₃ artificial synapses with lactose–citric acid electrolyte for neuromorphic computing." Applied Physics Letters 121, no. 18 (2022): 183301. http://dx.doi.org/10.1063/5.0124219.

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Electrolyte-gated synaptic transistors are promising for artificial neural morphological devices. However, few literatures have been reported regarding the manufacturing of electrolyte-gated synaptic transistors with low cost and biocompatible components. Here, the fully transparent synaptic transistors based on water-induced In2O3 thin films have been integrated by sol–gel method at low temperature, and lactose dissolved in citric acid solution is used as the gate electrolyte. The migration of the ions at the interface plays a crucial role in the potentiation and depression of the synaptic weight. In this work, the biological synaptic functions, including excitatory postsynaptic current, paired-pulse facilitation, high-pass filtering characteristics, short-term memory, and long-term memory, are mimicked. Meanwhile, based on the potentiation/depression behaviors of the synaptic transistor, a three-layer artificial neural network is applied for pattern recognition, and the recognition accuracy is as high as 94.6%. This study offers a possibility to realize fully transparent synaptic devices with biocompatible components at low temperature.

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4

Lago, Nicolò, Marco Buonomo, Federico Prescimone, Stefano Toffanin, Michele Muccini, and Andrea Cester. "Direct Comparison of the Effect of Processing Conditions in Electrolyte-Gated and Bottom-Gated TIPS-Pentacene Transistors." Electronic Materials 3, no. 4 (2022): 281–90. http://dx.doi.org/10.3390/electronicmat3040024.

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Among the plethora of soluble and easy processable organic semiconductors, 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-P5) is one of the most promising materials for next-generation flexible electronics. However, based on the information reported in the literature, it is difficult to exploit in field-effect transistors the high-performance characteristics of this material. This article correlates the HMDS functionalization of the silicon substrate with the electrical characteristics of TIPS-P5-based bottom gate organic field-effect transistors (OFETs) and electrolyte-gated organic field-effect transistors (EGOFETs) fabricated over the same platform. TIPS-P5 transistors with a double-gate architecture were fabricated by simple drop-casting on Si/SiO2 substrates, and the substrates were either functionalized with hexamethyldisilazane (HMDS) or left untreated. The same devices were characterized both as standard bottom-gate transistors and as (top-gate) electrolyte-gated transistors, and the results with and without HMDS treatment were compared. It is shown that the functionalization of the silicon substrate negatively influences EGOFETs performance, while it is beneficial for bottom-gate OFETs. Different device architectures (e.g., bottom-gate vs. top-gate) require specific evaluation of the fabrication protocols starting from the effect of the HMDS functionalization to maximize the electrical characteristics of TIPS-P5-based devices.

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5

Morais, Rogério, Douglas Henrique Vieira, Maykel dos Santos Klem, et al. "Printed in-plane electrolyte-gated transistor based on zinc oxide." Semiconductor Science and Technology 37, no. 3 (2022): 035007. http://dx.doi.org/10.1088/1361-6641/ac48da.

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Abstract Printed electronics is a reputable research area that aims at simple alternatives of manufacturing low-cost, eco-friendly, and biodegradable electronic devices. Among these devices, electrolyte-gated transistors (EGTs) stand out due to their simple manufacturing process and architecture. Here we report the study of printed EGTs with in-plane gate transistor (IPGT) architecture based on zinc oxide nanoparticles. The drain, source, and gate electrodes with two different W/L channel ratios were fabricated using a screen-printed carbon-based ink. We also produced a conventional top-gate transistor as a standard device, using the same structure of the IPGT described above with the addition of an indium tin oxide strip positioned over the electrolyte as the top-gate electrode. The IPGT with W/L = 5 presented a high mobility of 7.95 ± 0.55 cm2 V−1 s−1, while the W/L = 2.5 device exhibited a mobility of 3.03 ± 0.52 cm2 V−1 s−1. We found that the measured field-effect mobility of the device can be affected by the high contact resistance from the carbon electrodes. This effect could be observed when the device’s geometric parameters were changed. Furthermore, we also found that the IPGT with W/L = 5 exhibited higher values for mobility and transconductance than the top-gate transistor, showing that the IPGTs architecture is a good approach for cheap and printed transistors with performance comparable to standard top-gate EGTs.

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6

Monalisha, P., Shengyao Li, Shwetha G. Bhat, Tianli Jin, P. S. Anil Kumar, and S. N. Piramanayagam. "Synaptic behavior of Fe₃O₄-based artificial synapse by electrolyte gating for neuromorphic computing." Journal of Applied Physics 133, no. 8 (2023): 084901. http://dx.doi.org/10.1063/5.0120854.

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Neuromorphic computing (NC) is a crucial step toward realizing power-efficient artificial intelligence systems. Hardware implementation of NC is expected to overcome the challenges associated with the conventional von Neumann computer architecture. Synaptic devices that can emulate the rich functionalities of biological synapses are emerging. Out of several approaches, electrolyte-gated synaptic transistors have attracted enormous scientific interest owing to their similar working mechanism. Here, we report a three-terminal electrolyte-gated synaptic transistor based on Fe3O4 thin films, a half-metallic spinel ferrite. We have realized gate-controllable multilevel, non-volatile, and rewritable states for analog computing. Furthermore, we have emulated essential synaptic functions by applying electrical stimulus to the gate terminal of the synaptic device. This work provides a new candidate and a platform for spinel ferrite-based devices for future NC applications.

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7

Liu, Huixuan, and Rongri Tan. "Fabrication of Flexible In-Plane Gate Nanowire Transistor on a Paper Substrate." Journal of Nanoscience and Nanotechnology 21, no. 9 (2021): 4857–60. http://dx.doi.org/10.1166/jnn.2021.19075.

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Flexible in-plane gate SnO2 nanowire (NW) transistor gated by SiO2 acting as a solid electrolyte was fabricated on a paper substrate by using a transmission electron microscopy (TEM) Ni grid shadow mask. The operating voltage of in-plane gate SnO2 NW transistor was down to 1 V because of the large electric-double-layer (EDL) capacitance of the SiO2 electrolyte layer. Current on/off ratio (Ion/Ioff) and field-effect electron mobility (µEF) as well as subthreshold slope of this device were ~106, 74.7cm2·V−1s−1 and 80 mV·dec−1, respectively. The proposed flexible and low-voltage SnO2 NW transistors on paper substrate exhibit immense potential for applications in portable and flexible electronic devices.

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8

Yu, Ji-Man, Chungryeol Lee, Joon-Kyu Han, et al. "Multi-functional logic circuits composed of ultra-thin electrolyte-gated transistors with wafer-scale integration." Journal of Materials Chemistry C 9, no. 22 (2021): 7222–27. http://dx.doi.org/10.1039/d1tc01486b.

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Wafer-scale integration of electrolyte gated transistors is demonstrated by using iCVD. A solid-state pEGDMA was used as a gate electrolyte, and it configures multi-functional logic circuits, such as inverter, NAND, and NOR with high performance.

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9

Giovannitti, Alexander, Dan-Tiberiu Sbircea, Sahika Inal, et al. "Controlling the mode of operation of organic transistors through side-chain engineering." Proceedings of the National Academy of Sciences 113, no. 43 (2016): 12017–22. http://dx.doi.org/10.1073/pnas.1608780113.

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Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode. Here, we show that the use of glycolated side chains on a thiophene backbone can result in accumulation mode OECTs with high currents, transconductance, and sharp subthreshold switching, while maintaining fast switching speeds. Compared with alkylated analogs of the same backbone, the triethylene glycol side chains shift the mode of operation of aqueous electrolyte-gated transistors from interfacial to bulk doping/transport and show complete and reversible electrochromism and high volumetric capacitance at low operating biases. We propose that the glycol side chains facilitate hydration and ion penetration, without compromising electronic mobility, and suggest that this synthetic approach can be used to guide the design of organic mixed conductors.

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10

Leonardi, Francesca, Adrián Tamayo, Stefano Casalini, and Marta Mas-Torrent. "Modification of the gate electrode by self-assembled monolayers in flexible electrolyte-gated organic field effect transistors: work function vs. capacitance effects." RSC Advances 8, no. 48 (2018): 27509–15. http://dx.doi.org/10.1039/c8ra05300f.

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The functionalisation of the gate electrode in electrolyte-gated field effect transistors (EGOFETs) with self-assembled monolayers effect the device electrical performance mainly due to the induced capacitance changes.

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11

Singh, M., K. Manoli, A. Tiwari, et al. "The double layer capacitance of ionic liquids for electrolyte gating of ZnO thin film transistors and effect of gate electrodes." Journal of Materials Chemistry C 5, no. 14 (2017): 3509–18. http://dx.doi.org/10.1039/c7tc00800g.

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Electrolyte gated thin film transistors (TFTs) based on sol–gel processed zinc oxide (ZnO) are investigated using imidazolium-based ionic liquids (ILs), namely [bmim][BF<sub>4</sub>] and [bmim][PF<sub>6</sub>], as electrolytes.

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12

Muñoz, Jose, Francesca Leonardi, Tayfun Özmen, et al. "Carbon-paste nanocomposites as unconventional gate electrodes for electrolyte-gated organic field-effect transistors: electrical modulation and bio-sensing." Journal of Materials Chemistry C 7, no. 47 (2019): 14993–98. http://dx.doi.org/10.1039/c9tc04929k.

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Nanocomposite carbon-paste electrodes (NC-CPEs) have been investigated for the first time in electrolyte-gated organic field-effect transistors (EGOFETs) as a replacement of conventional metal gate electrodes for bio-sensing applications.

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13

Zhang, Minghao, Yan Wang, Hao Liu, Wenshuo Wu, Guorui Yin, and Jie Su. "IO/IGZO heterojunction artificial synaptic transistors gated by LiZrO solid electrolyte for multifunctional neuromorphic applications." Nanotechnology 36, no. 18 (2025): 185705. https://doi.org/10.1088/1361-6528/adc607.

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Abstract In recent years, artificial synaptic devices have been developed, with synaptic transistors gated by solid-state electrolytes offering superior stability compared to other devices. This study employed an IO/IGZO heterojunction synaptic transistor gated with LiZrO solid-state electrolyte. The heterojunction improves device mobility and ensures performance stability. A series of biological synaptic calculations are achieved through bilayer formation and electrochemical doping, including the implementation of excitatory postsynaptic currents and paired-pulse promotion under electrical and light stimuli. The visual afterimages phenomenon of the human eye is simulated using light pulses, offering insights into the implementation of visual sensory processing and parallel computation. The artificial neural network constructed in this study can achieve a recognition rate of 94.9%–97.3% on the handwritten digit dataset.

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14

He, Yongli, Yixin Zhu, and Qing Wan. "Oxide Ionic Neuro-Transistors for Bio-inspired Computing." Nanomaterials 14, no. 7 (2024): 584. http://dx.doi.org/10.3390/nano14070584.

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Current computing systems rely on Boolean logic and von Neumann architecture, where computing cells are based on high-speed electron-conducting complementary metal-oxide-semiconductor (CMOS) transistors. In contrast, ions play an essential role in biological neural computing. Compared with CMOS units, the synapse/neuron computing speed is much lower, but the human brain performs much better in many tasks such as pattern recognition and decision-making. Recently, ionic dynamics in oxide electrolyte-gated transistors have attracted increasing attention in the field of neuromorphic computing, which is more similar to the computing modality in the biological brain. In this review article, we start with the introduction of some ionic processes in biological brain computing. Then, electrolyte-gated ionic transistors, especially oxide ionic transistors, are briefly introduced. Later, we review the state-of-the-art progress in oxide electrolyte-gated transistors for ionic neuromorphic computing including dynamic synaptic plasticity emulation, spatiotemporal information processing, and artificial sensory neuron function implementation. Finally, we will address the current challenges and offer recommendations along with potential research directions.

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15

Qi, Hong-Fang, and Juan Wen. "Transient characteristics emulated in modified graphene-oxide solid electrolyte gated synaptic transistors." Journal of Physics: Conference Series 2370, no. 1 (2022): 012013. http://dx.doi.org/10.1088/1742-6596/2370/1/012013.

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To develop neuromorphic computational systems and achieve artificial intelligence, it is crucial to realize neuromorphic devices that mimic basic neural behavior. The electrolyte-gated transistors (EGTs) were fabricated using a 3-triethoxysilylpropylamine modified graphene-oxide (KH550-GO) electrolyte. The transistor exhibited good performance owing to the EDL effect of the KH550-GO electrolyte. A resistor-load inverter was also achieved with a high voltage gain of 12.4, and have low operating voltage. Furthermore, the crucial short-term synaptic plasticity(STP) functions, including excitatory post-synaptic current (EPSC) and high-pass filtering, were realized. More importantly, adaptation was emulated in our devices.

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16

Kang, Dong-Hee, Jun-Gyu Choi, Won-June Lee, et al. "Aqueous electrolyte-gated solution-processed metal oxide transistors for direct cellular interfaces." APL Bioengineering 7, no. 2 (2023): 026102. http://dx.doi.org/10.1063/5.0138861.

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Biocompatible field-effect-transistor-based biosensors have drawn attention for the development of next-generation human-friendly electronics. High-performance electronic devices must achieve low-voltage operation, long-term operational stability, and biocompatibility. Herein, we propose an electrolyte-gated thin-film transistor made of large-area solution-processed indium–gallium–zinc oxide (IGZO) semiconductors capable of directly interacting with live cells at physiological conditions. The fabricated transistors exhibit good electrical performance operating under sub-0.5 V conditions with high on-/off-current ratios (>107) and transconductance (>1.0 mS) over an extended operational lifetime. Furthermore, we verified the biocompatibility of the IGZO surface to various types of mammalian cells in terms of cell viability, proliferation, morphology, and drug responsiveness. Finally, the prolonged stable operation of electrolyte-gated transistor devices directly integrated with live cells provides the proof-of-concept for solution-processed metal oxide material-based direct cellular interfaces.

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17

Huang, Heyi, Chen Ge, Zhuohui Liu, et al. "Electrolyte-gated transistors for neuromorphic applications." Journal of Semiconductors 42, no. 1 (2021): 013103. http://dx.doi.org/10.1088/1674-4926/42/1/013103.

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18

Hong, Kihyon, Dong Heon Choo, Han Ju Lee, Jae Yong Park, and Jong-Lam Lee. "Substrate-free, stretchable electrolyte gated transistors." Organic Electronics 87 (December 2020): 105936. http://dx.doi.org/10.1016/j.orgel.2020.105936.

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19

Kim, Beom Joon, Euyheon Hwang, Moon Sung Kang, and Jeong Ho Cho. "Electrolyte-Gated Graphene Schottky Barrier Transistors." Advanced Materials 27, no. 39 (2015): 5875–81. http://dx.doi.org/10.1002/adma.201502020.

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20

Huang, Wei, Jianhua Chen, Gang Wang, et al. "Dielectric materials for electrolyte gated transistor applications." Journal of Materials Chemistry C 9, no. 30 (2021): 9348–76. http://dx.doi.org/10.1039/d1tc02271g.

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In this review, the recent progress of different types of electrolyte dielectric materials for electrolyte gated transistors (EGTs) is summarized, along with the structures and operation of EGTs and their relevant applications.

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21

S. Barbosa, M., F. M. B. Oliveira, X. Meng, F. Soavi, C. Santato, and M. O. Orlandi. "Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism." Journal of Materials Chemistry C 6, no. 8 (2018): 1980–87. http://dx.doi.org/10.1039/c7tc04529h.

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22

Cho, Kyung Gook, Min Su Kim, Dong Hyun Park, and Keun Hyung Lee. "Spray-Printed Sub-1 V and Flexible Electrolyte-Gated Inverters." Journal of Flexible and Printed Electronics 3, no. 1 (2024): 103–10. http://dx.doi.org/10.56767/jfpe.2024.3.1.103.

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We demonstrate all-printed, low-voltage, and flexible electrolyte-gated transistors and inverters prepared through a facile spray-printing process. All active components of the electronic circuits, including source/drain electrodes, semiconductor, gate dielectric, gate electrode, and load resistor, were directly deposited via spray printing. The sprayed transistors show a high on/off ratio of ∼104. The printed devices also show excellent operational stability under successive bending stresses, maintaining 88% of their performance after 5,000 bending cycles at a small bending radius of 2 mm. Furthermore, the resistor-loaded flexible inverters exhibit appropriate rail-to-rail voltage inverting characteristics with a high voltage gain of ~9 at a low supply voltage of −1 V. These results demonstrate that the high-throughput strategy is promising for generating low-voltage, flexible, and all-spray-printed electronic circuits.

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23

Lee, Dong-Hee, Hamin Park, and Won-Ju Cho. "Synaptic Transistors Based on PVA: Chitosan Biopolymer Blended Electric-Double-Layer with High Ionic Conductivity." Polymers 15, no. 4 (2023): 896. http://dx.doi.org/10.3390/polym15040896.

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This study proposed a biocompatible polymeric organic material-based synaptic transistor gated with a biopolymer electrolyte. A polyvinyl alcohol (PVA):chitosan (CS) biopolymer blended electrolyte with high ionic conductivity was used as an electrical double layer (EDL). It served as a gate insulator with a key function as an artificial synaptic transistor. The frequency-dependent capacitance characteristics of PVA:CS-based biopolymer EDL were evaluated using an EDL capacitor (Al/PVA: CS blended electrolyte-based EDL/Pt configuration). Consequently, the PVA:CS blended electrolyte behaved as an EDL owing to high capacitance (1.53 µF/cm2) at 100 Hz and internal mobile protonic ions. Electronic synaptic transistors fabricated using the PVA:CS blended electrolyte-based EDL membrane demonstrated basic artificial synaptic behaviors such as excitatory post-synaptic current modulation, paired-pulse facilitation, and dynamic signal-filtering functions by pre-synaptic spikes. In addition, the spike-timing-dependent plasticity was evaluated using synaptic spikes. The synaptic weight modulation was stable during repetitive spike cycles for potentiation and depression. Pattern recognition was conducted through a learning simulation for artificial neural networks (ANNs) using Modified National Institute of Standards and Technology datasheets to examine the neuromorphic computing system capability (high recognition rate of 92%). Therefore, the proposed synaptic transistor is suitable for ANNs and shows potential for biological and eco-friendly neuromorphic systems.

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24

Kuleshov, B. S., E. G. Zavyalova, E. Yu Poymanova, A. A. Abramov, S. A. Ponomarenko, and E. V. Agina. "Multisensors based on electrolyte-gated organic field-effect transistors with aptamers as recognition elements: current state of research." Russian Chemical Reviews 93, no. 4 (2024): RCR5116. http://dx.doi.org/10.59761/rcr5116.

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The review gives a systematic account of published data devoted to multisensor technologies for manufacturing effective miniature devices capable of simultaneous accurate determination of several analytes and/or characteristics of biological fluids. The use of electrolyte-gated field-effect transistors as a biosensing platform is considered in detail. The devices based on these transistors demonstrate record-low limits of detection and are easy for mass production. The use of electrolyte-gated field-effect transistors in combination with aptamers capable of specifically binding to various analytes forms the grounds for innovations in early medical diagnosis (label-free biomarker detection). The most successful examples of multisensor devices using these transistors are presented, and the prospects of using aptamers as a recognition element in these devices are demonstrated.<br>Bibliography — 154 references.

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25

Jeong, Jaehoon, Surya Abhishek Singaraju, Jasmin Aghassi‐Hagmann, Horst Hahn, and Ben Breitung. "Adhesive Ion‐Gel as Gate Insulator of Electrolyte‐Gated Transistors." ChemElectroChem 7, no. 13 (2020): 2735–39. http://dx.doi.org/10.1002/celc.202000305.

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Jeong, Jaehoon, Surya Abhishek Singaraju, Jasmin Aghassi‐Hagmann, Horst Hahn, and Ben Breitung. "Adhesive Ion‐Gel as Gate Insulator of Electrolyte‐Gated Transistors." ChemElectroChem 7, no. 13 (2020): 2692. http://dx.doi.org/10.1002/celc.202000687.

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Yuen, Jonathan D., Anoop S. Dhoot, Ebinazar B. Namdas, et al. "Electrochemical Doping in Electrolyte-Gated Polymer Transistors." Journal of the American Chemical Society 129, no. 46 (2007): 14367–71. http://dx.doi.org/10.1021/ja0749845.

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Stelmach, Emilia, Ewa Jaworska, Vijay D. Bhatt, et al. "Electrolyte gated transistors modified by polypyrrole nanoparticles." Electrochimica Acta 309 (June 2019): 65–73. http://dx.doi.org/10.1016/j.electacta.2019.04.034.

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Rosenblatt, Sami, Yuval Yaish, Jiwoong Park, Jeff Gore, Vera Sazonova, and Paul L. McEuen. "High Performance Electrolyte Gated Carbon Nanotube Transistors." Nano Letters 2, no. 8 (2002): 869–72. http://dx.doi.org/10.1021/nl025639a.

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Buth, Felix, Andreas Donner, Matthias Sachsenhauser, Martin Stutzmann, and Jose A. Garrido. "Biofunctional Electrolyte-Gated Organic Field-Effect Transistors." Advanced Materials 24, no. 33 (2012): 4511–17. http://dx.doi.org/10.1002/adma.201201841.

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Bi, Jinming, Yanran Li, Rong Lu, Honglin Song, and Jie Jiang. "Electrolyte-gated optoelectronic transistors for neuromorphic applications." Journal of Semiconductors 46, no. 2 (2025): 021401. https://doi.org/10.1088/1674-4926/24090042.

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Abstract The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learning, rendering it incapable of meeting the growing demand for efficient and high-speed computing. Neuromorphic computing with significant advantages such as high parallelism and ultra-low power consumption is regarded as a promising pathway to overcome the limitations of conventional computers and achieve the next-generation artificial intelligence. Among various neuromorphic devices, the artificial synapses based on electrolyte-gated transistors stand out due to their low energy consumption, multimodal sensing/recording capabilities, and multifunctional integration. Moreover, the emerging optoelectronic neuromorphic devices which combine the strengths of photonics and electronics have demonstrated substantial potential in the neuromorphic computing field. Therefore, this article reviews recent advancements in electrolyte-gated optoelectronic neuromorphic transistors. First, it provides an overview of artificial optoelectronic synapses and neurons, discussing aspects such as device structures, operating mechanisms, and neuromorphic functionalities. Next, the potential applications of optoelectronic synapses in different areas such as artificial visual system, pain system, and tactile perception systems are elaborated. Finally, the current challenges are summarized, and future directions for their developments are proposed.

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Seol, Kyoung Hwan, Seung Ju Lee, Kyung Gook Cho, Kihyon Hong, and Keun Hyung Lee. "Highly conductive, binary ionic liquid–solvent mixture ion gels for effective switching of electrolyte-gated transistors." Journal of Materials Chemistry C 6, no. 41 (2018): 10987–93. http://dx.doi.org/10.1039/c8tc03076f.

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33

Fu, Yang Ming, Tianye Wei, Joseph Brownless, Long Huang, and Aimin Song. "Synaptic transistors with a memory time tunability over seven orders of magnitude." Applied Physics Letters 120, no. 25 (2022): 252903. http://dx.doi.org/10.1063/5.0095730.

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The human brain is capable of short- and long-term memory with retention times ranging from a few seconds to several years. Electrolyte-gated transistors have drawn attention for their potential to mimic synaptic behaviors in neuromorphic applications, but they generally operate at low voltages to avoid instability and, hence, offer limited tunability. Sputtered silicon dioxide electrolytes are utilized in this work to gate indium-gallium-zinc-oxide thin-film transistors, which offer robust operation at much higher voltages. The synaptic memory behavior is studied under single and multiple pulses and under mild (1 V) and strong stimuli (up to 8 V). The devices are found to be capable of providing an extremely wide range of memory retention time from ∼2 ms to ∼20 000 s, over seven orders of magnitude. Furthermore, based on the experimental data on individual transistors, pattern learning and memorizing functionalities are conceptually demonstrated.

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Coluccio, Maria Laura, Salvatore A. Pullano, Marco Flavio Michele Vismara, et al. "Emerging Designs of Electronic Devices in Biomedicine." Micromachines 11, no. 2 (2020): 123. http://dx.doi.org/10.3390/mi11020123.

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A long-standing goal of nanoelectronics is the development of integrated systems to be used in medicine as sensor, therapeutic, or theranostic devices. In this review, we examine the phenomena of transport and the interaction between electro-active charges and the material at the nanoscale. We then demonstrate how these mechanisms can be exploited to design and fabricate devices for applications in biomedicine and bioengineering. Specifically, we present and discuss electrochemical devices based on the interaction between ions and conductive polymers, such as organic electrochemical transistors (OFETs), electrolyte gated field-effect transistors (FETs), fin field-effect transistor (FinFETs), tunnelling field-effect transistors (TFETs), electrochemical lab-on-chips (LOCs). For these systems, we comment on their use in medicine.

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Liu, Jiang, Fangchao Zhao, Huaping Li, and Qibing Pei. "Electrolyte-gated light-emitting transistors: working principle and applications." Materials Chemistry Frontiers 2, no. 2 (2018): 253–63. http://dx.doi.org/10.1039/c7qm00258k.

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Sayago, J., F. Soavi, Y. Sivalingam, F. Cicoira, and C. Santato. "Low voltage electrolyte-gated organic transistors making use of high surface area activated carbon gate electrodes." J. Mater. Chem. C 2, no. 28 (2014): 5690–94. http://dx.doi.org/10.1039/c4tc00864b.

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The use of high surface area, low cost, activated carbon gate electrodes enables low voltage (sub-1 V) operation in ionic liquid-gated organic transistors and renders unnecessary the presence of an external reference electrode to monitor the channel potential.

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37

Althagafi, Talal M., Saud A. Algarni, Abdullah Al Naim, Javed Mazher, and Martin Grell. "Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors." Physical Chemistry Chemical Physics 17, no. 46 (2015): 31247–52. http://dx.doi.org/10.1039/c5cp03326h.

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Wan, Xiang, Qiujie Yuan, Lianze Sun, Kunfang Chen, Dongyoon Khim, and Zhongzhong Luo. "Reservoir Computing Enabled by Polymer Electrolyte-Gated MoS2 Transistors for Time-Series Processing." Polymers 17, no. 9 (2025): 1178. https://doi.org/10.3390/polym17091178.

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This study presented a novel reservoir computing (RC) system based on polymer electrolyte-gated MoS2 transistors. The proposed transistors operate through lithium ion (Li+) intercalation, which induces reversible phase transitions between semiconducting 2H and metallic 1T’ phases in MoS2 films. This mechanism enables dynamic conductance modulation with inherent nonlinearity and fading memory effects, rendering these transistors particularly suitable as reservoir nodes. Our RC implementation leverages time-multiplexed virtual nodes to reduce physical component requirements while maintaining rich temporal dynamics. Testing on a spoken digit recognition task using the NIST TI-46 dataset demonstrated 95.1% accuracy, while chaotic time-series prediction of the Lorenz system achieved a normalized root mean square error as low as 0.04. This work established polymer electrolyte-gated MoS2 transistors as promising building blocks for efficient RC systems capable of processing complex temporal patterns, offering enhanced scalability, and practical applicability in neuromorphic computation.

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Lee, Donghui, Yunji Jung, Myeongjin Ha, Hyungju Ahn, Keun Hyung Lee, and Myungeun Seo. "High-conductivity electrolyte gate dielectrics based on poly(styrene-co-methyl methacrylate)/ionic liquid." Journal of Materials Chemistry C 7, no. 23 (2019): 6950–55. http://dx.doi.org/10.1039/c9tc01610d.

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Thiemann, S., S. J. Sachnov, M. Gruber, et al. "Spray-coatable ionogels based on silane-ionic liquids for low voltage, flexible, electrolyte-gated organic transistors." J. Mater. Chem. C 2, no. 13 (2014): 2423–30. http://dx.doi.org/10.1039/c3tc32465f.

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Liu, Rui, Li Qiang Zhu, Wei Wang, Xiao Hui, Zhao Ping Liu, and Qing Wan. "Biodegradable oxide synaptic transistors gated by a biopolymer electrolyte." Journal of Materials Chemistry C 4, no. 33 (2016): 7744–50. http://dx.doi.org/10.1039/c6tc02693a.

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42

Mackin, Charles, and Tomás Palacios. "Correction: Large-scale sensor systems based on graphene electrolyte-gated field-effect transistors." Analyst 143, no. 2 (2018): 580. http://dx.doi.org/10.1039/c7an90100c.

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Carvalho, José, Viorel Dubceac, Paul Grey, et al. "Fully Printed Zinc Oxide Electrolyte-Gated Transistors on Paper." Nanomaterials 9, no. 2 (2019): 169. http://dx.doi.org/10.3390/nano9020169.

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Fully printed and flexible inorganic electrolyte gated transistors (EGTs) on paper with a channel layer based on an interconnected zinc oxide (ZnO) nanoparticle matrix are reported in this work. The required rheological properties and good layer formation after printing are obtained using an eco-friendly binder such as ethyl cellulose (EC) to disperse the ZnO nanoparticles. Fully printed devices on glass substrates using a composite solid polymer electrolyte as gate dielectric exhibit saturation mobility above 5 cm2 V−1 s−1 after annealing at 350 °C. Proper optimization of the nanoparticle content in the ink allows for the formation of a ZnO channel layer at a maximum annealing temperature of 150 °C, compatible with paper substrates. These devices show low operation voltages, with a subthreshold slope of 0.21 V dec−1, a turn on voltage of 1.90 V, a saturation mobility of 0.07 cm2 V−1 s−1 and an Ion/Ioff ratio of more than three orders of magnitude.

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Kim, Beom Joon, Euyheon Hwang, Moon Sung Kang, and Jeong Ho Cho. "Transistors: Electrolyte-Gated Graphene Schottky Barrier Transistors (Adv. Mater. 39/2015)." Advanced Materials 27, no. 39 (2015): 5849. http://dx.doi.org/10.1002/adma.201570258.

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Karimi, Hediyeh, Rubiyah Yusof, Mohammad Taghi Ahmadi, et al. "Capacitance Variation of Electrolyte-Gated Bilayer Graphene Based Transistors." Journal of Nanomaterials 2013 (2013): 1–5. http://dx.doi.org/10.1155/2013/836315.

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Quantum capacitance of electrolyte-gated bilayer graphene field-effect transistors is investigated in this paper. Bilayer graphene has received huge attention due to the fact that an energy gap could be opened by chemical doping or by applying external perpendicular electric field. So, this extraordinary property can be exploited to use bilayer graphene as a channel in electrolyte-gated field-effect transistors. The quantum capacitance of bi-layer graphene with an equivalent circuit is presented, and also based on the analytical model a numerical solution is reported. We begin by modeling the DOS, followed by carrier concentration as a functionVin degenerate and nondegenerate regimes. To further confirm this viewpoint, the presented analytical model is compared with experimental data, and acceptable agreement is reported.

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Xu, Haihua, Ying Lv, Yongchun Deng, and Qingqing Zhu. "In situ probing electronic dynamics at organic bulk heterojunction/aqueous electrolyte interfaces by charge modulation spectroscopy." Physical Chemistry Chemical Physics 20, no. 2 (2018): 1267–75. http://dx.doi.org/10.1039/c7cp06675a.

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Bandiello, E., M. Sessolo, and H. J. Bolink. "Aqueous electrolyte-gated ZnO transistors for environmental and biological sensing." J. Mater. Chem. C 2, no. 48 (2014): 10277–81. http://dx.doi.org/10.1039/c4tc02075h.

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Qin, Wei, Byung Ha Kang, Jong Bin An, and Hyun Jae Kim. "Indium oxide nanomesh-based electrolyte-gated synaptic transistors." Journal of Information Display 22, no. 3 (2021): 179–85. http://dx.doi.org/10.1080/15980316.2021.1911866.

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Li, Sheng, Lin Gao, Changjian Liu, Haihong Guo, and Junsheng Yu. "Biomimetic Neuromorphic Sensory System via Electrolyte Gated Transistors." Sensors 24, no. 15 (2024): 4915. http://dx.doi.org/10.3390/s24154915.

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Biomimetic neuromorphic sensing systems, inspired by the structure and function of biological neural networks, represent a major advancement in the field of sensing technology and artificial intelligence. This review paper focuses on the development and application of electrolyte gated transistors (EGTs) as the core components (synapses and neuros) of these neuromorphic systems. EGTs offer unique advantages, including low operating voltage, high transconductance, and biocompatibility, making them ideal for integrating with sensors, interfacing with biological tissues, and mimicking neural processes. Major advances in the use of EGTs for neuromorphic sensory applications such as tactile sensors, visual neuromorphic systems, chemical neuromorphic systems, and multimode neuromorphic systems are carefully discussed. Furthermore, the challenges and future directions of the field are explored, highlighting the potential of EGT-based biomimetic systems to revolutionize neuromorphic prosthetics, robotics, and human–machine interfaces. Through a comprehensive analysis of the latest research, this review is intended to provide a detailed understanding of the current status and future prospects of biomimetic neuromorphic sensory systems via EGT sensing and integrated technologies.

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Valitova, Irina, Prajwal Kumar, Xiang Meng, Francesca Soavi, Clara Santato, and Fabio Cicoira. "Photolithographically Patterned TiO2 Films for Electrolyte-Gated Transistors." ACS Applied Materials & Interfaces 8, no. 23 (2016): 14855–62. http://dx.doi.org/10.1021/acsami.6b01922.

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