Relevant bibliographies by topics / Electromechanical chain, Silicon Carbide (SiC)

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Electromechanical chain, Silicon Carbide (SiC)'

Author: Grafiati
Published: 7 July 2024
Last updated: 31 July 2025

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Journal articles on the topic "Electromechanical chain, Silicon Carbide (SiC)"

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Lee, Te-Hao, Swarup Bhunia, and Mehran Mehregany. "Electromechanical Computing at 500°C with Silicon Carbide." Science 329, no. 5997 (2010): 1316–18. http://dx.doi.org/10.1126/science.1192511.

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Logic circuits capable of operating at high temperatures can alleviate expensive heat-sinking and thermal-management requirements of modern electronics and are enabling for advanced propulsion systems. Replacing existing complementary metal-oxide semiconductor field-effect transistors with silicon carbide (SiC) nanoelectromechanical system (NEMS) switches is a promising approach for low-power, high-performance logic operation at temperatures higher than 300°C, beyond the capability of conventional silicon technology. These switches are capable of achieving virtually zero off-state current, mic
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Mu, Yi, Cai Cheng, Cui-E. Hu, and Xiao-Lin Zhou. "Structural and electronic transport properties of a SiC chain encapsulated inside a SiC nanotube: first-principles study." Physical Chemistry Chemical Physics 21, no. 46 (2019): 25548–57. http://dx.doi.org/10.1039/c9cp03945g.

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Silicon carbide (SiC) chains and silicon carbide nanotubes (SiCNTs) have potential applications in more controllable nanoelectronic devices. Here a new hybrid nanostructure with encapsulation of a SiC chain inside a SiCNT is designed and studied.
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Singh, Navab, Umesh Chand, Shiv Kumar, et al. "(Invited) Silicon Carbide Technology Scaling: Challenges and Opportunities across the Value Chain." ECS Meeting Abstracts MA2024-02, no. 32 (2024): 2295. https://doi.org/10.1149/ma2024-02322295mtgabs.

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Silicon Carbide (SiC) technology has emerged as a promising solution to address the growing demand for high-performance power electronics in various applications, ranging from automotive to renewable energy systems. As the industry continues to push the boundaries of SiC technology, scaling opportunities and challenges arise across the entire value chain, from material to device fabrication and new package architectures. In addition, it should be noted that scientific understanding, especially in the areas of defect behaviour in the SiC epitaxy layer, threshold voltage instability, interface t
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Niebelschütz, F., V. Cimalla, K. Brückner, et al. "Sensing applications of micro- and nanoelectromechanical resonators." Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems 221, no. 2 (2007): 59–65. http://dx.doi.org/10.1243/17403499jnn100.

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The sensitivity of micro- and nanoscale resonator beams for sensing applications in ambient conditions was investigated. Micro-electromechanical (MEMS) and nanoelectromechanical systems (NEMS) were realized using silicon carbide (SiC) and polycrystalline aluminium nitride (AlN) as active layers on silicon substrates. Resonant frequencies and quality factors in vacuum as well as in air were measured. The sensitivity behaviour under ambient conditions with a mass loading in the range of picogram (pg) was verified and measurements with biological mass loading were performed. In addition, the sens
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Rhoades, Robert. "(Invited) The Evolving SiC Market and Impact on CMP Supply Chain." ECS Meeting Abstracts MA2024-01, no. 20 (2024): 1257. http://dx.doi.org/10.1149/ma2024-01201257mtgabs.

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Silicon carbide (SiC) is a wide bandgap semiconductor with physical and electrical properties that provide superior performance in high-voltage or high-power applications. Compared to the more established silicon devices, SiC provides better thermal conductivity, ~10x higher breakdown voltage, faster switching speeds and lower resistivity. Even with the performance advantages, the adoption rate of SiC is slowed by high cost and the inherent difficulty of processing this material. SiC is extremely hard (just below diamond on the hardness scale) and chemically inert which makes processing boules
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Zhong, Bo, Wei Wu, Jian Wang, et al. "Process Chain for Ultra-Precision and High-Efficiency Manufacturing of Large-Aperture Silicon Carbide Aspheric Mirrors." Micromachines 14, no. 4 (2023): 737. http://dx.doi.org/10.3390/mi14040737.

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A large-aperture silicon carbide (SiC) aspheric mirror has the advantages of being light weight and having a high specific stiffness, which is the key component of a space optical system. However, SiC has the characteristics of high hardness and multi-component, which makes it difficult to realize efficient, high-precision, and low-defect processing. To solve this problem, a novel process chain combining ultra-precision shaping based on parallel grinding, rapid polishing with central fluid supply, and magnetorheological finishing (MRF) is proposed in this paper. The key technologies include th
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Erick Ogam, Z. E. A Fellah, Henry Otunga, Maxwell Mageto, and Andrew Oduor. "Temperature-Dependent Elastic Constants of Substrates for Manufacture of Mems Devices." Kabarak Journal of Research & Innovation 12, no. 1 (2022): 30–35. http://dx.doi.org/10.58216/kjri.v12i1.64.

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We present a comparative computational study of temperature-dependent elastic constants of silicon (Si), silicon carbide (SiC) and diamond as substrates that are commonly used in the manufacture of Micro-Electromechanical Systems (MEMS) devices. Also mentioned is Cd2SnO4, whose ground-state elastic constants were determined just recently for the first time. Si is the dominant substrate used in the manufacture of MEMS devices, owing to its desirable electrical, electronic, thermal and mechanical properties. However, its low hardness, brittleness and inability to work under harsh environment suc
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Kareem, Aseel A. "Enhanced thermal and electrical properties of epoxy/carbon fiber–silicon carbide composites." Advanced Composites Letters 29 (January 1, 2020): 2633366X1989459. http://dx.doi.org/10.1177/2633366x19894598.

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The silicon carbide/carbon fiber (SiC/CF) hybrid fillers were introduced to improve the electrical and thermal conductivities of the epoxy resin composites. Results of Fourier transform infrared spectroscopy revealed that the peaks at 3532 and 2850 cm−1 relate to carboxylic acid O–H stretching and aldehyde C–H stretching appearing deeper with an increased volume fraction of SiC. Scanning electron microscopic image shows a better interface bonding between the fiber and the matrix when the volume fraction of SiC particles are increased. As frequency increases from 102 Hz to 106 Hz, dielectric co
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Ji, Xiaojun, Qiang Xiao, and Jing Chen. "Full-Wave Analysis of Ultrahigh Electromechanical Coupling Surface Acoustic Wave Propagating Properties in a Relaxor Based Ferroelectric Single Crystal/Cubic Silicon Carbide Layered Structure." Modelling and Simulation in Engineering 2017 (2017): 1–6. http://dx.doi.org/10.1155/2017/7078383.

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This paper describes a full-wave analysis of ultrahigh electromechanical coupling surface acoustic wave (SAW) of Y-cut X propagating Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (YX-PIMNT) single crystals on a cubic silicon carbide (3C-SiC) substrate. There are several eigenmodes including shear horizontal (SH) and Rayleigh SAWs. Based on the finite-element method (FEM), the phase velocity (vp) and coupling factor (K2) of SAWs varying with the top electrode thickness, thickness, and Euler angle (θ) of the YX-PIMNT substrate have been investigated. K2 of SH SAW can reach an extremely high value of
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Li, Ning, Jinfu Ding, Liguang Hu, Xiao Wang, Lirong Lu, and Jianmeng Huang. "Preparation, Microstructure and Compressive Properties of Silicone GEL/SiC Composites for Elastic Abrasive." Advanced Composites Letters 27, no. 3 (2018): 096369351802700. http://dx.doi.org/10.1177/096369351802700305.

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An elastic abrasive tool based on micropore silica gel was designed and reinforced with silicon carbide (SiC) particle. The abrasive internal structure presents porous chain network structure, and the enhanced particles uniformly distributed in the matrix. The compression performance of modified composites is nonlinear increasing. The experimental results show that the accumulating energy of the self microporous structure is easy to overcome the internal friction in a certain deformation quantity of the materials. When the deformation quantity is large enough, the microporous structure and the
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Dissertations / Theses on the topic "Electromechanical chain, Silicon Carbide (SiC)"

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Taghia, Bouazza. "Modélisation et optimisation paramétrique d'une chaine électromécanique pour la prévention des décharges partielles dans un actionneur aéronautique." Electronic Thesis or Diss., Toulouse, INPT, 2023. http://www.theses.fr/2023INPT0121.

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Actuellement, la distribution à bord des aéronefs de l’énergie électrique en haute tension continue (HVDC) et l'utilisation de technologies de rupture telle que l’utilisation des semi-conducteurs à grand gap (SiC et GaN) dans les convertisseurs statiques sont parmi les leviers indispensables pour le développement de l’avion plus électrique. L'utilisation des semi-conducteurs à grand gap augmente la densité massique des convertisseurs ; cependant, leurs commutations rapides (quelques dizaines de ns) favorisent la création de surtensions dues aux phénomènes de propagation et de réflexion le long
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Tian, Ye. "SiC Readout IC for High Temperature Seismic Sensor System." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-213969.

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Over the last decade, electronics operating at high temperatures have been increasingly demanded to support in situ sensing applications such as automotive, deep-well drilling and aerospace. However, few of these applications have requirements above 460 °C, as the surface temperature of Venus, which is a specific target for the seismic sensing application in this thesis. Due to its wide bandgap, Silicon Carbide (SiC) is a promising candidate to implement integrated circuits (ICs) operating in such extreme environments. In this thesis, various analog and mixed-signal ICs in 4H-SiC bipolar techn
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Book chapters on the topic "Electromechanical chain, Silicon Carbide (SiC)"

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Bollina, Ravi, William Gemmill, Terry Knight, and Helge Willers. "Rapid Thinning in SiC Wafering: Innovations and Impacts on the Value Chain." In Silicon Carbide - Materials, Devices and Emerging Applications [Working Title]. IntechOpen, 2025. https://doi.org/10.5772/intechopen.1008810.

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The semiconductor industry’s demand for high-performance, cost-effective substrates has driven innovations in silicon carbide (SiC) wafer manufacturing. SiC’s exceptional electrical properties make it an ideal material for high-power, high-frequency, and high-temperature applications. However, traditional wafer thinning methods like mechanical grinding and chemical mechanical polishing (CMP) are time-consuming and costly, limiting throughput and increasing the cost of production. The Rapid Thinning process (RTP) developed by Pureon represents a breakthrough in wafer processing technology, comb
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Shinde, Amol S., Sameer S. Nanivadekar, Raju Kumar Swami, and Ajay Kumar. "Review of Advanced Materials Used in Electric Vehicle Applications." In Advances in Chemical and Materials Engineering. IGI Global, 2025. https://doi.org/10.4018/979-8-3693-5513-8.ch004.

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The chapter provides an in-depth review of advanced materials used in electric vehicle (EV) applications, addressing the critical role these materials play in improving energy efficiency, safety, and performance. It explores key considerations such as lightweighting, thermal management, conductivity, safety, and durability. A detailed examination of battery materials, highlights advancements aimed at enhancing range, charging speed, and safety. The chapter also delves into the use of lightweight structural materials, such as aluminum alloys and carbon fiber composites, which significantly cont
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Conference papers on the topic "Electromechanical chain, Silicon Carbide (SiC)"

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Feng, X. L., M. H. Matheny, R. B. Karabalin, C. A. Zorman, M. Mehregany, and M. L. Roukes. "Silicon carbide (SiC) top-down nanowire electromechanical resonators." In TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2009. http://dx.doi.org/10.1109/sensor.2009.5285595.

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Reese, Samantha, Margaret Mann, Timothy Remo, and Kelsey Horowitz. "Regional Manufacturing Cost Structures and Supply Chain Considerations for Medium Voltage Silicon Carbide Power Applications." In ASME 2018 13th International Manufacturing Science and Engineering Conference. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/msec2018-6601.

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Bottoms-up cost analysis has been a mainstay of commoditized industry and manufacturing processes for years, however a holistic objective supply chain analysis to inform research and investment in the development of early stage technologies has not. The potential for rapid adoption of wide bandgap (WBG) semiconductors, specifically silicon carbide (SiC), highlights a need to understand the drivers of location-specific manufacturing cost, global supply chains, and plant location decisions. Further, ongoing research and investment, necessitates analytical analysis to help inform the roadmap of S
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Kazinczi, R., J. R. Mollinger, and A. Bossche. "Down-Scale Problems of Resonant Mode SiC Devices." In ASME 2000 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2000. http://dx.doi.org/10.1115/imece2000-1095.

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Abstract Silicon carbide (SiC) is a promising candidate to replace conventional silicon based electronics and micro electromechanical devices in various applications. The present study characterizes material properties of SiC thin films and addresses reliability issues focused on down-scaled resonant mode future devices. The Young’s modulus was calculated from resonant measurements on SiC cantilever beams. The long-term stability of the resonator was studied in various environments. Thin cantilevers operating in air and in humid air exhibit stiffening effect due to surface oxidation. Mechanica
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Shen, Haoting, M. Tanjidur Rahman, Navid Asadizanjani, Mark Tehranipoor, and Swarup Bhunia. "Coating-Based PCB Protection against Tampering, Snooping, EM Attack, and X-ray Reverse Engineering." In ISTFA 2018. ASM International, 2018. http://dx.doi.org/10.31399/asm.cp.istfa2018p0290.

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Abstract In the last decades, the supply chain of printed circuit boards (PCBs) becomes distributed with growing complexity of PCB designs and the economic trend of outsourcing the PCB manufacturing. This makes the PCBs more vulnerable to security attacks, such as tampering, snooping, and electromagnetic (EM) attacks. Because of the large feature size of PCBs (compared to integrated circuits), it is challenging to protect the PCBs from those attacks or proof the suspected attacks. For the same reason, PCBs are vulnerable to non-invasive reverse engineering by X-ray tomography as well. In this
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Wang, B. X., and C. Y. Zhao. "Topological Phonon Polaritons for Thermal Radiation Control." In ASME 2019 6th International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/mnhmt2019-4002.

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Abstract Topological phonon polaritons (TPhPs) are highly localized edge modes that can achieve a strong confinement of electromagnetic waves and are topologically protected to be immune to impurities and disorder. In this paper, we theoretically study the topological phonon polaritons (TPhPs) in one-dimensional (1D) dimerized silicon carbide (SiC) nanoparticle (NP) chains, as an extension of the celebrated Su-Schrieffer-Heeger (SSH) model. We analytically calculate the band structure and complex Zak phase for such chains by taking all near-field and far-field interactions into account. It is
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Kramb, Marc, and Rolf Slatter. "The role of magnetic sensors in the hybridisation and electrification of vehicles." In 19th International Congress of Metrology (CIM2019), edited by Sandrine Gazal. EDP Sciences, 2019. http://dx.doi.org/10.1051/metrology/201926007.

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Electrical currents need to be measured in a wide variety of different applications in the field of power electronics. However, the requirements for these measurement devices are becoming steadily more demanding regarding accuracy, size and especially bandwidth. In order to increase the power density of power electronics, as particularly important in the field of electromobility, there is a clear causal chain. Soft switching leads to higher efficiency and higher frequencies, which enable smaller dimensions for a given power output. Higher switching frequencies allow the size of magnetic compon
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