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Journal articles on the topic 'Electromigration-thermomigration'

Author: Grafiati

Published: 6 September 2023

Last updated: 7 September 2023

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1

Yang, D., Y. C. Chan, B. Y. Wu, and M. Pecht. "Electromigration and thermomigration behavior of flip chip solder joints in high current density packages." Journal of Materials Research 23, no. 9 (2008): 2333–39. http://dx.doi.org/10.1557/jmr.2008.0305.

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The electromigration and thermomigration behavior of eutectic tin-lead flip chip solder joints, subjected to currents ranging from 1.6 to 2.0 A, at ambient temperatures above 100 °C, was experimentally and numerically studied. The temperature at the chip side was monitored using both a temperature coefficient of resistance method and a thermal infrared technique. The electron wind force and thermal gradient played the dominant role in accelerated atomic migration. The atomic flux of lead due to electromigration and thermomigration was estimated for comparison. At the current crowding region, e

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2

Abdulhamid, Mohd F., Cemal Basaran, and Yi-Shao Lai. "Thermomigration Versus Electromigration in Microelectronics Solder Joints." IEEE Transactions on Advanced Packaging 32, no. 3 (2009): 627–35. http://dx.doi.org/10.1109/tadvp.2009.2018293.

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3

Shidong Li, Mohd F. Abdulhamid, and Cemal Basaran. "Simulating Damage Mechanics of Electromigration and Thermomigration." SIMULATION 84, no. 8-9 (2008): 391–401. http://dx.doi.org/10.1177/0037549708094856.

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4

Yao, Wei, and Cemal Basaran. "Computational damage mechanics of electromigration and thermomigration." Journal of Applied Physics 114, no. 10 (2013): 103708. http://dx.doi.org/10.1063/1.4821015.

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5

Gu, Xin, and Y. C. Chan. "Thermomigration and electromigration in Sn58Bi solder joints." Journal of Applied Physics 105, no. 9 (2009): 093537. http://dx.doi.org/10.1063/1.3125458.

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6

Gu, X., K. C. Yung, Y. C. Chan, and D. Yang. "Thermomigration and electromigration in Sn8Zn3Bi solder joints." Journal of Materials Science: Materials in Electronics 22, no. 3 (2010): 217–22. http://dx.doi.org/10.1007/s10854-010-0116-9.

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7

Dohle, Rainer, Stefan Härter, Andreas Wirth та ін. "Electromigration Performance of Flip-Chips with Lead-Free Solder Bumps between 30 μm and 60 μm Diameter". International Symposium on Microelectronics 2012, № 1 (2012): 000891–905. http://dx.doi.org/10.4071/isom-2012-wp41.

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As the solder bump sizes continuously decrease with scaling of the geometries, current densities within individual solder bumps will increase along with higher operation temperatures of the dies. Since electromigration of flip-chip interconnects is highly affected by these factors and therefore an increasing reliability concern, long-term characterization of new interconnect developments needs to be done regarding the electromigration performance using accelerated life tests. Furthermore, a large temperature gradient exists across the solder interconnects, leading to thermomigration. In this s

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8

Shidong Li, M. F. Abdulhamid, and C. Basaran. "Damage Mechanics of Low Temperature Electromigration and Thermomigration." IEEE Transactions on Advanced Packaging 32, no. 2 (2009): 478–85. http://dx.doi.org/10.1109/tadvp.2008.2005840.

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9

Lin, Y. H., C. M. Tsai, Y. C. Hu, Y. L. Lin, J. Y. Tsai, and C. R. Kao. "Electromigration Induced Metal Dissolution in Flip-Chip Solder Joints." Materials Science Forum 475-479 (January 2005): 2655–58. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.2655.

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The failure of flip chip solder joints through the dissolution of the Cu metallization was studied. From the location and geometry of the dissolved Cu, it can be concluded that current crowding played a critical role in the dissolution. It can also be concluded that temperature, as an experimental variable, is not less import than the current density in electromigration study. Experimentally, no evidence of mass transport due to thermomigration was observed.

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10

Somaiah, Nalla, and Praveen Kumar. "Tuning electromigration-thermomigration coupling in Cu/W Blech structures." Journal of Applied Physics 124, no. 18 (2018): 185102. http://dx.doi.org/10.1063/1.5045086.

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11

Chen, Chih, H. M. Tong, and K. N. Tu. "Electromigration and Thermomigration in Pb-Free Flip-Chip Solder Joints." Annual Review of Materials Research 40, no. 1 (2010): 531–55. http://dx.doi.org/10.1146/annurev.matsci.38.060407.130253.

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12

Basaran, Cemal, and Mohd F. Abdulhamid. "Low temperature electromigration and thermomigration in lead-free solder joints." Mechanics of Materials 41, no. 11 (2009): 1223–41. http://dx.doi.org/10.1016/j.mechmat.2009.07.004.

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13

Gu, X., K. C. Yung, and Y. C. Chan. "Thermomigration and electromigration in Sn58Bi ball grid array solder joints." Journal of Materials Science: Materials in Electronics 21, no. 10 (2009): 1090–98. http://dx.doi.org/10.1007/s10854-009-9992-2.

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14

Basaran, C., H. Ye, D. C. Hopkins, D. Frear, and J. K. Lin. "Failure Modes of Flip Chip Solder Joints Under High Electric Current Density." Journal of Electronic Packaging 127, no. 2 (2004): 157–63. http://dx.doi.org/10.1115/1.1898338.

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The failure modes of flip chip solder joints under high electrical current density are studied experimentally. Three different failure modes are reported. Only one of the failure modes is caused by the combined effect of electromigration and thermomigration, where void nucleation and growth contribute to the ultimate failure of the module. The Ni under bump metallization–solder joint interface is found to be the favorite site for void nucleation and growth. The effect of pre-existing voids on the failure mechanism of a solder joint is also investigated

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15

Tu, K. N., and A. N. Gusak. "Mean-Time-To-Failure Equations for Electromigration, Thermomigration, and Stress Migration." IEEE Transactions on Components, Packaging and Manufacturing Technology 10, no. 9 (2020): 1427–31. http://dx.doi.org/10.1109/tcpmt.2020.3003003.

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16

Ichinokawa, T., C. Haginoya, D. Inoue, and H. Itoh. "Electromigration and thermomigration of metallic islands on the Si(100) surface." Journal of Physics: Condensed Matter 5, no. 33A (1993): A405—A406. http://dx.doi.org/10.1088/0953-8984/5/33a/152.

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17

Chiu, Tsung-Chieh, and Kwang-Lung Lin. "Electromigration behavior of the Cu/Au/SnAgCu/Cu solder combination." Journal of Materials Research 23, no. 1 (2008): 264–73. http://dx.doi.org/10.1557/jmr.2008.0036.

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The electromigration behavior of the Cu/Au/SnAgCu/Cu combination was investigated under 103 A/cm2 of current stressing at ambient temperature. The Au layer, when it acts as a cathode, was consumed continuously, and no significant compound was found at the interface. Meanwhile, Cu6Sn5 was formed at the anodic Cu layer, and the thickness of the compound increased with increasing time. The Au atoms were found to be trapped in Cu6Sn5 within the solder matrix. The AuSn4 compound precipitated while attaching to Cu6Sn5 at the Cu6Sn5/solder interface. The thermomigration effect was found to be insigni

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18

Somaiah, Nalla, and Praveen Kumar. "Effect of Thermomigration–Electromigration Coupling on Mass Transport in Cu Thin Films." Journal of Electronic Materials 49, no. 1 (2019): 96–108. http://dx.doi.org/10.1007/s11664-019-07634-4.

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19

Feng, Dandan, Fengjiang Wang, Dongyang Li, Bin Wu, and Luting Liu. "Atomic migration on Cu in Sn-58Bi solder from the interaction between electromigration and thermomigration." Materials Research Express 6, no. 4 (2019): 046301. http://dx.doi.org/10.1088/2053-1591/aaf91c.

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20

Zhang, Peng, Songbai Xue, and Jianhao Wang. "New challenges of miniaturization of electronic devices: Electromigration and thermomigration in lead-free solder joints." Materials & Design 192 (July 2020): 108726. http://dx.doi.org/10.1016/j.matdes.2020.108726.

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21

Shen, Yu-An, and John A. Wu. "Effect of Sn Grain Orientation on Reliability Issues of Sn-Rich Solder Joints." Materials 15, no. 14 (2022): 5086. http://dx.doi.org/10.3390/ma15145086.

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Sn-rich solder joints in three-dimensional integrated circuits and their reliability issues, such as the electromigration (EM), thermomigration (TM), and thermomechanical fatigue (TMF), have drawn attention related to their use in electronic packaging. The Sn grain orientation is recognized as playing an important role in reliability issues due to its anisotropic diffusivity, mechanical properties, and coefficient of thermal expansion. This study reviews the effects of the Sn grain orientation on the EM, TM, and TMF in Sn-rich solder joints. The findings indicate that in spite of the failure m

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22

Becker, H., D. Heger, A. Leineweber, and David Rafaja. "Modification of the Diffusion Process in the Iron-Aluminum System via Spark Plasma Sintering/Field Assisted Sintering Technology." Defect and Diffusion Forum 367 (April 2016): 1–9. http://dx.doi.org/10.4028/www.scientific.net/ddf.367.1.

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The influence of Spark Plasma Sintering / Field Assisted Sintering Technology applying pulsed direct current up to the root-mean-square current densities of 129 A/cm2 on the interfacial reactions in Al - Fe - Al stacks was investigated at temperatures between 500°C and 600°C. Independently of the current density and current direction, thin Al13Fe4 and wide Al5Fe2 phases were detected in the diffusion couples. The Al5Fe2 phase consisted of columnar grains having a {001}-fiber texture. Al13Fe4 was found in the form of discontinuous spots at the Al/Al5Fe2 interface. The interface between Al5Fe2 a

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23

Baek, Sung-Min, Yujin Park, Cheolmin Oh, Eun-Joon Chun, and Namhyun Kang. "Modeling and Experimental Verification of Intermetallic Compounds Grown by Electromigration and Thermomigration for Sn-0.7Cu Solders." Journal of Electronic Materials 48, no. 1 (2018): 142–51. http://dx.doi.org/10.1007/s11664-018-6786-4.

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24

Yao, Wei, and Cemal Basaran. "Damage mechanics of electromigration and thermomigration in lead-free solder alloys under alternating current: An experimental study." International Journal of Damage Mechanics 23, no. 2 (2013): 203–21. http://dx.doi.org/10.1177/1056789513488396.

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25

Kim, Seung-Hyun, Gyu-Tae Park, Jong-Jin Park, and Young-Bae Park. "Effects of Annealing, Thermomigration, and Electromigration on the Intermetallic Compounds Growth Kinetics of Cu/Sn-2.5Ag Microbump." Journal of Nanoscience and Nanotechnology 15, no. 11 (2015): 8593–600. http://dx.doi.org/10.1166/jnn.2015.11502.

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26

Chen, Hsiao-Yun, and Chih Chen. "Thermomigration of Cu–Sn and Ni–Sn intermetallic compounds during electromigration in Pb-free SnAg solder joints." Journal of Materials Research 26, no. 8 (2011): 983–91. http://dx.doi.org/10.1557/jmr.2011.25.

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27

Guo, Fu, Qian Liu, Limin Ma, and Yong Zuo. "Diffusion behavior of Sn atoms in Sn58Bi solder joints under the coupling effect of thermomigration and electromigration." Journal of Materials Research 31, no. 12 (2016): 1793–800. http://dx.doi.org/10.1557/jmr.2016.145.

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28

Kimura, Yasuhiro, and Yang Ju. "Equilibrium current density balancing two atomic flows in coupled problems of electromigration and thermomigration in unpassivated gold film." AIP Advances 10, no. 8 (2020): 085125. http://dx.doi.org/10.1063/5.0011417.

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29

Tu, K. N., and A. M. Gusak. "A unified model of mean-time-to-failure for electromigration, thermomigration, and stress-migration based on entropy production." Journal of Applied Physics 126, no. 7 (2019): 075109. http://dx.doi.org/10.1063/1.5111159.

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30

Huang, Annie T., K. N. Tu, and Yi-Shao Lai. "Effect of the combination of electromigration and thermomigration on phase migration and partial melting in flip chip composite SnPb solder joints." Journal of Applied Physics 100, no. 3 (2006): 033512. http://dx.doi.org/10.1063/1.2227621.

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31

Sung, Po-Hsien, and Tei-Chen Chen. "Material Properties of Zr–Cu–Ni–Al Thin Films as Diffusion Barrier Layer." Crystals 10, no. 6 (2020): 540. http://dx.doi.org/10.3390/cryst10060540.

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Due to the rapid increase in current density encountered in new chips, the phenomena of thermomigration and electromigration in the solder bump become a serious reliability issue. Currently, Ni or TiN, as a barrier layer, is widely academically studied and industrially accepted to inhibit rapid copper diffusion in interconnect structures. Unfortunately, these barrier layers are polycrystalline and provide inadequate protection because grain boundaries may presumably serve as fast diffusion paths for copper and could react to form Cu–Sn intermetallic compounds (IMCs). Amorphous metallic films,

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32

Li, Feng, Andrew W. Owens, and Qianyi Li. "Microbump Processing for 3D IC Integration." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (2019): 001028–49. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_wp2_049.

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In recent years, the development of microbumps has allowed even smaller sizes of ICs to utilize the flip chip technique. In addition, microbumps have enabled the implementation of three-dimensional (3D) ICs, which drastically improve the spatial efficiency of packaging. However, as the bumps size decreases and the number increases, several process challenges must be considered, for example, the height consistency of bump, the ratio of miss and deformity bump and the yield and strength of interconnection, etc. Therefore, it is increasingly important to study the interconnection technology and m

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33

Domenicucci, A. G., B. Cunningham, and P. Tsang. "Characterization of Electrically Pulsed Chromium Disilicide Fusible Links." MRS Proceedings 523 (1998). http://dx.doi.org/10.1557/proc-523-103.

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AbstractFusible links, fabricated from silicon rich chromium disilicide thin films, were subjected to voltage pulses in the 3–6 volt range. An optimum voltage existed at which the fuses blew. Transmission electron microscopy (TEM) was used to study the microstructural characteristics of the fuses both before and after the application of the voltage pulses. The TEM characterization, coupled with electrical and physical measurements, revealed that the mechanism underlying the fuse blow was hole current induced Si electromigration. Below the optimum voltage, the amount of Si transported was insuf

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34

Cui, Zhen, Xuejun Fan, Yaqian Zhang, Sten Vollebregt, Jiajie Fan, and Guoqi Zhang. "Coupling Model of Electromigration and Experimental Verification – Part II: Impact of Thermomigration." Journal of the Mechanics and Physics of Solids, March 2023, 105256. http://dx.doi.org/10.1016/j.jmps.2023.105256.

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35

Chen, Liang, Sheldon X. D. Tan, Zeyu Sun, Shaoyi Peng, Min Tang, and Junfa Mao. "A Fast Semi-Analytic Approach for Combined Electromigration and Thermomigration Analysis for General Multi-Segment Interconnects." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2020, 1. http://dx.doi.org/10.1109/tcad.2020.2994271.

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36

"Abstracts: General References: Diffusion Processes, Electromigration, Thermomigration, Point Defects, Linear Defects, Planar Defects, Irradiation Effects, Ionic Conduction." Defect and Diffusion Forum 51-52 (January 1987): 275–310. http://dx.doi.org/10.4028/www.scientific.net/ddf.51-52.275.

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37

"General References, Diffusion Processes, Electromigration, Thermomigration, Point Deffects, Linear Defects, Planar Defects, Irradiation Effects and Ionic Conduction." Defect and Diffusion Forum 61 (January 1988): 189–232. http://dx.doi.org/10.4028/www.scientific.net/ddf.61.189.

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38

"General References, Diffusion Processes, Electromigration, Thermomigration, Point Defects, Linear Effects, Planar Defects, Irradiation Effects and Ionic Conduction." Defect and Diffusion Forum 64-65 (January 1989): 321–58. http://dx.doi.org/10.4028/www.scientific.net/ddf.64-65.321.

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39

"General References, Diffusion Processes, Electromigration, Thermomigration, Point Defects, Linear Defects, Planar Defects, Irradiation Effects and Ionic Conduction." Defect and Diffusion Forum 72-73 (January 1990): 265–88. http://dx.doi.org/10.4028/www.scientific.net/ddf.72-73.265.

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40

Semenov, A. S., J. Trapp, M. Nöthe, B. Kieback, and T. Wallmersperger. "Multi‐physics simulation and experimental investigation of the densification of metals by spark plasma sintering." Advanced Engineering Materials, August 9, 2023. http://dx.doi.org/10.1002/adem.202300764.

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Multi‐variant experimental investigations and multi‐physics microstructural modeling of the spark plasma sintering process of metallic powders have been performed up to a relative density of approximately 80 %. In comparison, the effect of sintering temperature, pressure and particle size on the interparticle contact area growth and axial shrinkage of cylindrical specimens of copper and nickel particles is measured in laboratory scaled tests. In the present research, for the first time all relevant for sintering phenomena were considered simultaneously: the fully coupled thermo‐electro‐mechani

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