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Dissertations / Theses on the topic 'Electromigration'

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Published: 4 June 2021
Last updated: 25 July 2025

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1

Posser, Gracieli. "Electromigration aware cell design." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2015. http://hdl.handle.net/10183/114798.

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A Eletromigração (EM) nas interconexões de metal em um chip é um mecanismo crítico de falhas de confiabilidade em tecnologias de escala nanométrica. Os trabalhos na literatura que abordam os efeitos da EM geralmente estão preocupados com estes efeitos nas redes de distribuição de potência e nas interconexões entre as células. Este trabalho aborda o problema da EM em outro aspecto, no interior das células, e aborda especificamente o problema da eletromigração em interconexões de saída, Vdd e Vss dentro de uma célula padrão onde há poucos estudos na literatura que endereçam esse problema. Até on
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2

Ross, Caroline Anne. "Electromigration in thin metal films." Thesis, University of Cambridge, 1989. https://www.repository.cam.ac.uk/handle/1810/250938.

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3

Clarke, Peter John. "Electromigration in integrated circuit interconnects." Thesis, London South Bank University, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.357205.

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4

Witt, Christian. "Electromigration in bamboo aluminium interconnects /." [S.l. : s.n.], 2000. http://www.bsz-bw.de/cgi-bin/xvms.cgi?SWB9066445.

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Witt, Christian. "Electromigration in bamboo aluminum interconnects." [S.l. : s.n.], 2000. http://www.bsz-bw.de/cgi-bin/xvms.cgi?SWB9142791.

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6

Orchard, Helen Theresa. "Electromigration effects at wire-bond interfaces." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.612971.

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7

Amtsfield, Joel 1968. "Electromigration characterization of aluminum thin films." Thesis, The University of Arizona, 1992. http://hdl.handle.net/10150/278078.

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As VLSI chip sizes and packing densities continue to escalate, electromigration failures have become a primary reliability concern. The issues concerning electromigration testing are addressed and an effective test for characterizing electromigration failures is presented. It is shown that this test is a reliable and sensitive measure for determining electromigration resistance based upon the construction of an electromigration database using this test. Lastly, the implementation of an electromigration process control test based upon the characterization is discussed.
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8

Schönbächler, Edgar Arthur. "Electromigration behavior of a multi-layer metallization /." Zürich, 1998. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=12560.

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9

Gibbons, Brian J. "Electromigration induced step instabilities on silicon surfaces." Columbus, Ohio : Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1143235175.

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10

Contino, Catherine Marie. "The electromigration behavior of single crystal copper." Honors in the Major Thesis, University of Central Florida, 2001. http://digital.library.ucf.edu/cdm/ref/collection/ETH/id/217.

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This item is only available in print in the UCF Libraries. If this is your Honors Thesis, you can help us make it available online for use by researchers around the world by following the instructions on the distribution consent form at http://library.ucf.edu/Systems/DigitalInitiatives/DigitalCollections/InternetDistributionConsentAgreementForm.pdf You may also contact the project coordinator, Kerri Bottorff, at kerri.bottorff@ucf.edu for more information.<br>Bachelors<br>Engineering<br>Electrical Engineering
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11

Ravindra, M. "A novel test structure to monitor electromigration." Thesis, University of Edinburgh, 1992. http://hdl.handle.net/1842/14260.

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Electromigration continues to be one of the important failure mechanisms limiting the attainment of higher levels of reliability in sub-micron geometry VLSI circuits. Successful management of electromigration in future requires adoption of effective statistical process control techniques, in addition to the traditional quality control tests and inspections. The aim of this project was to develop a test structure and test methodology to monitor electromigration for metallisation process control. Based on analysis and some preliminary measurements on chequerboards, a new test structure and metho
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12

Gibbons, Brian J. Jr. "Electromigration induced step instabilities on silicon surfaces." The Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=osu1143235175.

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13

Zhu, Xiaoxin. "Computer simulation of electromigration in microelectronics interconnect." Thesis, University of Greenwich, 2014. http://gala.gre.ac.uk/13600/.

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Electromigration (EM) is a phenomenon that occurs in metal conductor carrying high density electric current. EM causes voids and hillocks that may lead to open or short circuits in electronic devices. Avoiding these failures therefore is a major challenge in semiconductor device and packaging design and manufacturing, and it will become an even greater challenge for the semiconductor assembly and packaging industry as electronics components and interconnects get smaller and smaller. According to the assembly and packaging section of the International Technology Roadmap for Semiconductor (ITRS)
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14

Straub, Alexander. "Factors influencing the critical product in electromigration." [S.l. : s.n.], 2000. http://www.bsz-bw.de/cgi-bin/xvms.cgi?SWB8862178.

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15

Marti, Giulio. "Etude et amélioration de l'électromigration pour améliorer la durée de vie des interconnexions des technologies CMOS." Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAI111/document.

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16

Mirpuri, Kabir. "Stress, texture and electromigration in damascene copper interconnects." Thesis, McGill University, 2005. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=100656.

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Recently Al was replaced by Cu as an interconnecting material. The primary objective of the present research was to investigate the mechanism of texture and microstructure evolution and to study its influence on electromigration in damascene Cu interconnects. For this purpose electromigration experiments were performed on the Cu interconnects in vacuum in the SEM. The in-situ electron back-scatter diffraction (EBSD) investigation of Cu interconnect lines before and after the electromigration failure helped to identify the orientations which were associated with electromigration defect nucleati
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17

Gall, Martin. "Investigation of electromigration reliability in Al(Cu) interconnects /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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18

Li, Linghong. "Using the optical microscopy imaging method for studying electromigration /." View online ; access limited to URI, 2005. http://0-wwwlib.umi.com.helin.uri.edu/dissertations/dlnow/3186910.

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19

Wartlick, Bernd Ole. "Electromigration dans les semiconducteurs - application au Hg0,3 Cd0,7 Te." Poitiers, 1996. http://www.theses.fr/1996POIT2304.

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Ce travail a ete realise au sein du laboratoire de metallurgie physique de l'universite de poitiers. Une partie des experiences a ete effectuee au laboratoire du iv. Physikalisches institut de l'universite de gottingen (allemagne). Le sujet de cette these se situe dans le large domaine des semiconducteurs. Nous avons etudie le comportement des impuretes chargees positivement dans les semiconducteurs de type p. En particulier, nous nous sommes interesses aux atomes donneurs en position interstitielle. Nous avons observe que ces donneurs peuvent etre mobiles a temperature ambiante. Les technique
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20

Selvaraj, Mukesh K. "An experimental study of electromigration in flip chip packages." Diss., Online access via UMI:, 2007.

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Thesis (Ph. D.)--State University of New York at Binghamton, Thomas J. Watson School of Engineering and Applied Science, Department of Systems Science and Industrial Engineering, 2007.<br>Includes bibliographical references.
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21

Cleveland, William Bryant. "Electromigration related effects at metal-metal interfaces application to railguns." Thesis, Monterey, Calif. : Naval Postgraduate School, 2007. http://bosun.nps.edu/uhtbin/hyperion.exe/07Mar%5FCleveland.pdf.

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Thesis (M.S. in Mechanical Engineering)--Naval Postgraduate School, March 2007.<br>Thesis Advisor(s): Indranath Dutta. "March 2007." Includes bibliographical references (p. 55-57). Also available in print.
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22

Dingari, Narahara C. "Characterization of electromigration in semiconductor device interconnects using microscopic techniques /." View online ; access limited to URI, 2007. http://0-digitalcommons.uri.edu.helin.uri.edu/dissertations/AAI3298367.

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23

Xu, Yi. "Microstructural configuration influence on electromigration in Sn/Cu thin films." Diss., Georgia Institute of Technology, 1994. http://hdl.handle.net/1853/31039.

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24

Low, Kia Seng. "Integrated circuit reliability studies of electromigration, stressmigration and copper contamination." Thesis, University of Newcastle Upon Tyne, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.323656.

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25

Andleigh, Vaibhav K. (Vaibhav Kumar) 1973. "Modeling of and experiments characterizing electromigration-induced failures in interconnects." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/8429.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2001.<br>Includes bibliographical references (leaves 326-333).<br>As interconnect linewidths continue to scale downward, a detailed knowledge of stress evolution and void growth processes enables a determination of the electromigration-induced failure times of these interconnects. This thesis provides this knowledge through the development of an electromigration simulation MIT/EmSim and through experiments. The stress effect on diffusivity and alloying effects were incorporated into the MIT/EmSim
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26

Wan, Ismail Wan Sazaley. "Electromigration time-to-failure analysis using a lumped element model." Thesis, Loughborough University, 2001. https://dspace.lboro.ac.uk/2134/33653.

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This thesis presents a theoretical and computer simulation of electromigration behaviour in the Integrated Circuit (IC) interconnection, with a particular emphasis on the analysis of the time-to-failure (TTF) produced through the Lumped Element model. The current and most accepted physical model for electromigration is the Stress Evolution Model which forms the basis for the development of the current Lumped Element Model. For early failures, and ignoring transport through the grain bulk, the problem reduces to that of solving the equations for stress evolution equation on the complex grain bo
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27

Hibbs, Andrew Dennis. "Electromigration in metals and critical currents in high Tc superconductors." Thesis, University of Cambridge, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.603993.

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This thesis contains experimental and theoretical work on two highly important aspects of electric current flow in solids. In Part 1 electromigration in metals is discussed and observations of the nucleation and growth of voids in aluminium microcircuits reported. The importance of stress driven diffusional backflow is highlighted and shown to play an analogous role to work hardening during plastic flow. In the second half of Part 1, a new expression for the force exerted on the lattice ions by the electrons of a current carrying metal is derived. The analysis is shown to be applicable to the
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28

Cinar, Selahittin. "Analysis of a Partial Differential Equation Model of Surface Electromigration." TopSCHOLAR®, 2014. https://digitalcommons.wku.edu/theses/1368.

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A Partial Differential Equation (PDE) based model combining surface electromigration and wetting is developed for the analysis of the morphological instability of mono-crystalline metal films in a high temperature environment typical to operational conditions of microelectronic interconnects. The atomic mobility and surface energy of such films are anisotropic, and the model accounts for these material properties. The goal of modeling is to describe and understand the time-evolution of the shape of film surface. I will present the formulation of a nonlinear parabolic PDE problem for the height
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29

Lu, CHIEN-CHUN, and 盧建均. "study solder electromigration." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/38248694445963509578.

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30

"Electromigration in Gold Interconnects." Doctoral diss., 2013. http://hdl.handle.net/2286/R.I.20914.

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abstract: Electromigration in metal interconnects is the most pernicious failure mechanism in semiconductor integrated circuits (ICs). Early electromigration investigations were primarily focused on aluminum interconnects for silicon-based ICs. An alternative metallization compatible with gallium arsenide (GaAs) was required in the development of high-powered radio frequency (RF) compound semiconductor devices operating at higher current densities and elevated temperatures. Gold-based metallization was implemented on GaAs devices because it uniquely forms a very low resistance ohmic contact an
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31

Chen, Ming Hsien, and 陳明賢. "Geometry Effect on via Electromigration." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/46405267919799396726.

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32

Chen, Cheng-Feng, and 陳誠風. "Electromigration of Sn-Cu intermetallic compounds." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/74117210204869338556.

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33

Kolivoška, Viliam. "2-D simulations of electromigration processes." Master's thesis, 2008. http://www.nusl.cz/ntk/nusl-290786.

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6 Abstract In the presented thesis we introduce a computational model that can be used for 2-D and 3-D computer simulations of experiments in electrophoresis. The simulations are carried out by the aid of the finite element method (FEM). In particular, commercially available program Comsol Multiphysics 3.3 is employed. A general shape of continuity equation is chosen to express the mass, electric charge, momentum and energy conservation law. Diffusion, migration and convection terms are taken into account when formulating the mass conservation law. Both external (driving voltage) and internal
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34

Liu, Chun-Chu, and 劉春蘜. "Electromigration Mechanisms in Bismuth Thin Films." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/66009182337576005670.

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35

Tseng, Muh Chyan, and 曾木乾. "The Study of Electromigration on Via." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/39788221768153488833.

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碩士<br>國立清華大學<br>電機工程學系<br>85<br>To mitigate the electromigration on via was investigated in this work. First, I improved the increasing current crowding effect with the device scaling on conventional multilayer interconnection via. Second, it solved the discontinuous interface of W-plug and Al and increased the via lifetime with filling 80%thickness of W film.
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36

Zeng, Mu-Qian, and 曾木乾. "The Study of Electromigration on Via." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/19093197071526774963.

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37

"Electromigration of Damascene copper for IC interconnect." Oregon Health & Science University, 2004. http://content.ohsu.edu/u?/etd,660.

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38

Chin, Yu-Lung, and 秦玉龍. "Electromigration-Induced Failures in Cu-Based Metallization." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/06417514401556942450.

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博士<br>國立交通大學<br>電子工程系<br>90<br>This thesis studies the relationship between electromigration resistances of Cu-based metallization with the diffusion barrier layer of tantalum (Chapter 4), the low dielectric constant polyimide of PI2610 (Chapter 5), and the alloy of Cu/Al (Chapter 6), respectively. The first topic focuses on the effects of a Ta barrier layer on the microstructure, electromigration and thermal-stress-enhanced electromigration of Cu interconnects. The second topic is the effects of low dielectric constant underlayer on the thermal characteristics, microstructure, electromigrat
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39

Chuang, Andy Y. C., and 莊淵棋. "The study of interface effect on electromigration." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/83801717317521207152.

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40

Wen-JingDeng and 鄧雯菁. "Electromigration in Flip Chip Sn2.6Ag Solder Bumps." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/19989939682267391028.

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41

Ke, Lin, and 戈鈴. "Study of Cu dissolution induced by Electromigration." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/93091112135733940130.

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碩士<br>國立中央大學<br>化學工程與材料工程研究所<br>92<br>To study the kinetics of Cu dissolution induced by electromigration,we produce a flip chip structure by connecting two Cu foil with a solder bump. Three different Sn-Cu solders are studied which are Sn, Sn0.7Cu,and Sn3.0Cu. The solder bumps are stressed by current density of 104(amp/cm2) at three elevated temperatures, which are 155 ºC, 180 ºC,and 200ºC. The result shows that electromigration will cause the consumption in the cathode Cu pad. It is because that once Cu atoms dissolve into Sn, they are transported to the anode interface quickly. Hence, the s
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42

Hung, Han-Yi, and 洪漢儀. "The Poison effect on Cu Electromigration Degradation." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/87513690852724761851.

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碩士<br>國立交通大學<br>電子工程系<br>87<br>The use of low resistivity conductors and low dielectric constant interlevel dielectrics has been proposed to reduce the RC time delay and to improve electromigration (EM) damage. In this work, the metallization system with Cu and low K material, polyimide (PI), was prepared for electromigration tests. TGA, DTA and DSC revealed the thermal stability of polyimide and FTIR revealed the chemical structure transformation of polyimide in thermal process. Poison effect was observed during curing of polyimide and was investigated by secondary ion mass spect
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43

Tsai, Yun-Chih, and 蔡昀芷. "Electromigration- and Obstacle-Avoiding Routing Tree Construction." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/42728165049341469814.

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碩士<br>國立中央大學<br>電機工程研究所<br>99<br>As the complexity of the layout of analog ICs increases, designers must spend more effort in dealing with the routing problem. A main issue is the constraint of wire current density. Because the negligence of circuit designers or the channel width constraints between obstacles lead to the width of a wire too small, making the current density of the wire is too high. This condition causes electromigration phenomenon and a permanent failure (e.g., open- or short-circuit defect). However, widening wire widths arbitrarily to reduce the current density leads to larg
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44

SU, ZONG-KAI, and 蘇琮凱. "Modeling of electromigration phenomena in integrated circuits." Thesis, 1992. http://ndltd.ncl.edu.tw/handle/90789640072812675700.

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45

Chatterjee, Sandeep. "Redundancy-aware Electromigration Checking for Mesh Power Grids." Thesis, 2013. http://hdl.handle.net/1807/42716.

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Electromigration is re-emerging as a significant problem in modern integrated circuits (IC). Especially in power-grids, due to shrinking wire widths and increasing current densities, there is little or no margin left between the predicted EM stress and that allowed by the EM design rules. Statistical Electromigration Budgeting estimates the reliability of the grid by considering it as a series system. However, a power grid with its many parallel paths has much inherent redundancy. In this work, we propose a new model to estimate the MTF and reliability of the power grid under the influence of
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46

Pak, Jiwoo. "Electromigration modeling and layout optimization for advanced VLSI." Thesis, 2014. http://hdl.handle.net/2152/30944.

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Electromigration (EM) is a critical problem for interconnect reliability in advanced VLSI design. Because EM is a strong function of current density, a smaller cross-sectional area of interconnects can degrade the EM-related lifetime of IC, which is expected to become more severe in future technology nodes. Moreover, as EM is governed by various factors such as temperature, material property, geometrical shape, and mechanical stress, different interconnect structures can have distinct EM issues and solutions to mitigate them. For example, one of the most prominent technologies, die stacking te
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47

Wang, wen-Hisang, and 王祥文. "Electromigration effect on the microstructure of Tin foil." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/41900438744331352318.

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碩士<br>國立中央大學<br>化學工程與材料工程研究所<br>90<br>Abstract Electromigration is a generic reliability issue in very large scale integrated device. Often, it will cause the failure of interconnect line. As the trend of miniaturization in flip chip package continues, electromigration in solder joints becomes a serious reliability issue. Tin is the most common element in solder alloys. The focus of this research work was to study the electromigration effect on the microstructure of tin foil. The experimental content was divided into two parts. The first part is the tin stripe stressed by current density of 2
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48

Huang, Hsiung-Nien, and 黃雄年. "Study on Electromigration of Flip-Chip Solder Interconnect." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/60304611680142508254.

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碩士<br>國立中山大學<br>機械與機電工程學系研究所<br>92<br>As the trend of miniaturization of complex integrated circuit(IC) devices, the current density of flip-chip solder bumps have increased significantly and each solder joint is supporting a current density close to or even over 104 A/cm2 .Therefore, in SnPb eutectic solder, which has a high diffusivity at the operating temperature due to its low melting point, the electromigration becomes a major reliability threat. Thus, the thesis is aimed to investigate the effects of electromigration behavior on flip-chip package eutectic Sn-Pb solder bumps reliability
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49

Wang, Yao-hui, and 王耀輝. "Electromigration Study of Ni-Pd-Au UBM effect." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/ghjk3r.

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碩士<br>國立高雄大學<br>電機工程學系--先進電子構裝技術產業研發碩<br>97<br>In this thesis ,our purpose is utilizing the different thickness of UBM ,connect the circuit and compare the electromigration phenomenon for solder ball with UBM and aim different thickness with the same time to probe into their characteristic ,and calculate the reliability of different materials with different temperature, and Ni/Pd/Au electromigration state. In WLCSP package technology is advancement ,identical current will follow size reduce and resistance upgrading ,so electromigration phenomenon to accelerate ,this experimentation focus two e
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hsu, yung-chang, and 徐永昌. "Electromigration Study of SnAg3.8Cu0.7 Solder Using Blech Structure." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/94208137871852802737.

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碩士<br>國立交通大學<br>工學院半導體材料與製程產業專班<br>95<br>Critical length of lead-free solder has not been measure because it is very difficult to prepare short solder stripe. In this study, By employing focus ion beam, solder stripes of various lengths, including 5, 10, 15, 20, 30, 100, and 200 μm, can be fabricated. Length dependent electromigration behavior was observed, which implies that there may be back stress under current stressing. We can determine the critical length under testing condition under 2~4×104 A/cm2 at 100-150℃, the critical product is 20~30 A/cm and critical length is 10~15 μm
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