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Journal articles on the topic 'Electromigration'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

He, Liang, Lei Du та Yi Qi Zhuang. "Study on 1/f ^γ Noise Characterization of Metallic Interconnection Electromigration". Materials Science Forum 610-613 (січень 2009): 521–25. http://dx.doi.org/10.4028/www.scientific.net/msf.610-613.521.

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Metallic interconnection electromigration is a common phenomenon in integral circuit, and it influences circuit reliability seriously as rapid miniaturization of circuit size. Resistance is a traditional electromigration characterization parameter, but it requires strict testing condition, and it is not sensitive to vacancies accumulation at early stage of electromigration. Some recent researches show that noise is very sensitive to metallic thin film electromigration, it can be used as an effective inspect method for electromigration. So noise wais used to characterize damage degree of Al thi

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2

Zhao, Wen-Sheng, Rui Zhang, and Da-Wei Wang. "Recent Progress in Physics-based Modeling of Electromigration in Integrated Circuit Interconnects." Micromachines 13, no. 6 (2022): 883. http://dx.doi.org/10.3390/mi13060883.

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The advance of semiconductor technology not only enables integrated circuits with higher density and better performance but also increases their vulnerability to various aging mechanisms which occur from front-end to back-end. Analysis on the impact of aging mechanisms on circuits’ reliability is crucial for the design of reliable and sustainable electronic systems at advanced technology nodes. As one of the most crucial back-end aging mechanisms, electromigration deserves research efforts. This paper introduces recent studies on physics-based modeling of electromigration aging of on-chip inte

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3

Loupis, M. I., J. N. Avaritsiotis, and G. D. Tziallas. "Comparative Study of Statistical Distributions in Electromigration-Induced Failures of Al/Cu Thin-Film Interconnects." Active and Passive Electronic Components 16, no. 2 (1994): 119–26. http://dx.doi.org/10.1155/1994/60298.

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In electromigration failure studies, it is in general assumed that electromigration-induced failures may be adequately modelled by a log-normal distribution. Further to this, it has been argued that a lognormal distribution of failure times is indicative of electromigration mechanisms. We have combined post processing of existing life-data from Al/Cu + TiW bilayer interconnects with our own results from Al/Cu interconnects to show that the Log Extreme Value distribution is an equally good statistical model for electromigration failures, even in cases where grain size exceeds the linewidth. The

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4

Ceric, Hajdin, Orio de, Wolfhard Zisser, and Siegfried Selberherr. "Microstructural impact on electromigration: A TCAD study." Facta universitatis - series: Electronics and Energetics 27, no. 1 (2014): 1–11. http://dx.doi.org/10.2298/fuee1401001c.

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Current electromigration models used for simulation and analysis of interconnect reliability lack the appropriate description of metal microstructure and consequently have a very limited predictive capability. Therefore, the main objective of our work was obtaining more sophisticated electromigration models. The problem is addressed through a combination of different levels of atomistic modeling and already available continuum level macroscopic models. A novel method for an ab initio calculation of the effective valence for electromigration is presented and its application on the analysis of E

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5

Lee, Choong-Jae, Jae-Ha Kim, Haksan Jeong, Jae-Oh Bang, and Seung-Boo Jung. "Electromigration Behavior of Sn58Bi and Sn58Bi Epoxy Solder Joint." Science of Advanced Materials 12, no. 4 (2020): 538–43. http://dx.doi.org/10.1166/sam.2020.3662.

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As demanding for high performance and miniaturization of electronic devices, interconnection materials required higher reliability in mechanical, thermal and electrical. The importance of electromigration issue has increased because of these trends. We evaluated the electromigration behavior of Sn58Bi solder and Sn58Bi epoxy solder under high temperature and constant current flow. The electromigration test-kit was a designed and fabricated flip chip-type module and the diameter of the solder bump was 250 μm. A current was passed through the two solder joints, producing a current density of 3.0

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6

Bashir, Muhammad Nasir, Sajid Ullah Butt, Muhammad Adil Mansoor та ін. "Role of Crystallographic Orientation of β-Sn Grain on Electromigration Failures in Lead-Free Solder Joint: An Overview". Coatings 12, № 11 (2022): 1752. http://dx.doi.org/10.3390/coatings12111752.

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Due to the miniaturization of electronic devices, electromigration became one of the serious reliability issues in lead-free solder joints. The orientation of the β-Sn grain plays an important role in electromigration failures. Several studies have been carried out to investigate the effect of Sn grain orientation on electromigration. The efforts involve the influence of β-Sn grain orientation on the migration of Cu, Sn, and Ni atoms, on the morphology of the solder joint, and on the formation of Cu6Sn5 and (Cu, Ni)6Sn6 in the lead-free solder joint during electromigration. The current review

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7

Lloyd, J. R. "Electromigration failure." Journal of Applied Physics 69, no. 11 (1991): 7601–4. http://dx.doi.org/10.1063/1.347529.

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8

Lu, Yu Dong, Xiao Qi He, Yun Fei En, and Xin Wang. "Failure Mechanism of Electromigration in Solder Joint." Advanced Materials Research 44-46 (June 2008): 905–10. http://dx.doi.org/10.4028/www.scientific.net/amr.44-46.905.

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In advanced electronic products, electromigration-induced failure is one of the most serious problems in fine pitch flip chip solder joints because the design rule in devices requires high current density through small solder joints for high performance and miniaturization. The failure mode induced by electromigration in the flip chip solder joint is unique, owing to the loss of under bump metallurgy (UBM) and the interfacial void formation at the cathode contact interface. In this study, Electromigration of flip chip solder joints has been investigated under a constant density of 2.45×104 A/c

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9

Hasegawa, Takashi, and Masumi Saka. "Diagram of Electromigration Pattern in Eutectic Pb-Sn and Pb-Free Solders." Key Engineering Materials 297-300 (November 2005): 837–43. http://dx.doi.org/10.4028/www.scientific.net/kem.297-300.837.

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Solder is the most frequently used alloy, which serves as the bonding metal for electronics components. Recently, the interconnected bump is distinctly downsizing its bulk along with the integration of high-density packaging. The evaluation of electromigration damage for solder bumps is indispensable. Hence, it is fairly urgent to understand the mechanism of the electromigration damage to be capable of securing reliability of the solder bump and ultimately predicting its failure lifetime. Electromigration pattern in multi-phase material is determined by the combination of current density, temp

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10

Burgess, David. "Electromigration History and Failure Analysis." EDFA Technical Articles 16, no. 3 (2014): 14–19. http://dx.doi.org/10.31399/asm.edfa.2014-3.p014.

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Abstract Electromigration is a wearout mechanism that contributes significantly to IC failures. This article discusses the causes and effects of this often overlooked failure mode and presents practical guidelines to help analysts determine whether or not electromigration is the cause of a particular failure. It also discusses the differences between aluminum and copper electromigration.

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11

Singh, Prabjit, L. Palmer, M. Hamid, et al. "Comparison of Electromigration in Tin-Bismuth Planar and Bottom Terminated Component Solder Joints." Journal of Surface Mount Technology 37, no. 3 (2024): 16–23. http://dx.doi.org/10.37665/aha4dx58.

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Electromigration monitoring of bottom terminated component (BTC) solder joints is limited to electrical resistance measurements of the solder balls. Tracking the microstructural evolution such as bismuth segregation in tin-bismuth solder ball, is typically via metallurgical cross sectioning, a destructive technique. Once cross sectioned, the solder ball is not available for further electromigration current stressing. A novel planar solder geometry has been invented and developed that allows real-time, non-destructive monitoring of solder microstructure, while the progress of electromigration c

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12

Cheng, Yi-Lung, and Ying-Lang Wang. "Effect of Interfacial Condition on Electromigration for Narrow and Wide Copper Interconnects." Journal of Nanoscience and Nanotechnology 8, no. 5 (2008): 2494–99. http://dx.doi.org/10.1166/jnn.2008.573.

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The sub-micron damascene interconnects, electromigration is mainly due to the diffusion at the interfaces of Cu with liner or dielectric capping layer. Many reports have shown that Cu/capping dielectric is the dominant interface. Experiments were performed to study the effect of the interfacial conditions of Cu/capping dielectric material on electromigration for narrow and wide Cu lines. The results revealed significant differences in electromigration behavior of via-fed upper and lower layer damascene test structures. For upper layer test structure, the capping layer and plasma surface treatm

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13

Michael, J. R., A. D. Romig, and D. R. Frear. "Analytical electron microscopy of grain boundaries in Al-Cu metallizations." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (1992): 1684–85. http://dx.doi.org/10.1017/s0424820100133059.

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Al with additions of Cu is commonly used as the conductor metallizations for integrated circuits, the Cu being added since it improves resistance to electromigration failure. As linewidths decrease to submicrometer dimensions, the current density carried by the interconnect increases dramatically and the probability of electromigration failure increases. To increase the robustness of the interconnect lines to this failure mode, an understanding of the mechanism by which Cu improves resistance to electromigration is needed. A number of theories have been proposed to account for role of Cu on el

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14

Maskowitz, J. V., W. E. Rhoden, D. R. Kitchen, R. E. Omlor, and P. F. Lloyd. "In situ STEM observations of electromigration on thin aluminum stripes." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 740–41. http://dx.doi.org/10.1017/s0424820100145078.

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The existence of electromigration in thin films has been acknowledged since the early sixties. Electromigration is described as the main transport for atoms in a conductor under a current stress. Initial interest had been of a theoretical nature as electromigration had little impact on circuit reliability. With the maturing of Very Large Scale Integrated Circuit (VLSI) technology, current densities are exceeding 106 Amps/cm2 while linestripes are reaching into the submicron range. In this environment, electromigration can cause unwanted open or short circuits in thin films. This has serious im

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15

Mansourian, Ali, Seyed Amir Paknejad, Qiannan Wen, Khalid Khtatba, Anatoly V. Zayats, and Samjid H. Mannan. "Internal Structure Refinement of Porous Sintered Silver via Electromigration." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (2016): 000190–95. http://dx.doi.org/10.4071/2016-hitec-190.

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Abstract Atoms can move under high stress conditions such as temperature, mechanical pressure or electric current. Electromigration provides a driving force to move the atoms in metals conducting current usually resulting in the accumulation of atoms and void formation in anode and cathode respectively. The electromigration effect is normally considered a serious problem for electronic circuits but the recent works1–7 show that it can be used constructively for controlled fabrication of nanostructures2–4.We demonstrate that electromigration can be utilized to refine the porous structure of a s

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16

Lu, Yu Dong, Yun Fei En, Ming Wan, Xiao Qi He, and Xin Wang. "Mechanical Properties of Flip-Chip Solder Joints Effected by Electromigration." Advanced Materials Research 189-193 (February 2011): 1009–13. http://dx.doi.org/10.4028/www.scientific.net/amr.189-193.1009.

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A frequent cause of failure of portable and hand-held devices is an accidental drop to the ground. The effect of electromigration on the mechanical properties of solder joints was discussed in this paper. Without current stressing, the samples were broken in the bulk of solder or at the interface of Al interconnect and solder. If the Al-solder interfacial mechanical strength was improved by changed the interfacial structure or optimized the jointing process, the flip chip devices would show the lonely ductile fracture in the bulk of solder. After electromigration the samples were broken abrupt

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17

Huang, J. R., C. M. Tsai, Y. W. Lin, and C. R. Kao. "Pronounced electromigration of Cu in molten Sn-based solders." Journal of Materials Research 23, no. 1 (2008): 250–57. http://dx.doi.org/10.1557/jmr.2008.0024.

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The high local temperature in flip-chip solder joints of microprocessors has raised concerns that the solder, a low melting temperature alloy, might locally liquefy and consequently cause failure of the microprocessors. This article reports a highly interesting electromigration behavior when the solder is in the molten state. A 6.3 × 103 A/cm2 electron current was applied to molten Sn3.5Ag solder at 255 °C through two Cu electrodes. The high current density caused rapid dissolution of the Cu cathode. The dissolved Cu atoms were driven by electrons to the anode side and precipitated out as a th

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18

Nagakubo, Akira, Eriko Asanuma, and Hirotsugu Ogi. "In situ monitoring of electromigration in a single nano wire by picosecond ultrasonics." Journal of the Acoustical Society of America 153, no. 3_supplement (2023): A153. http://dx.doi.org/10.1121/10.0018476.

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Recent nano-scale fabrication has realized the progress of integrated circuits, where current density increases with the downscaling of each electronic component, leading to failure due to electromigration. Electromigration is the transport of materials via momentum exchange from high-density conducting electrons to metal atoms. Defects of atoms result in the disconnection of the circuits and the accumulation of atoms causes the short circuit. Therefore, electromigration due to highly dense current flow has been studied for long years. However, it is difficult to non-destructively evaluate the

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19

Kitchen, D. R., S. L. Linder, R. E. Omlor, and P. F. Lloyd. "Crystallographic orientation of aluminum whiskers formed by electromigration using transmission electron microscopy." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 370–71. http://dx.doi.org/10.1017/s0424820100126640.

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Electromigration is a well known phenomenon in the aluminum films of an integrated circuit and occurs at elevated temperatures under the influence of current densities exceeding 10 amps/cm2. The failure modes are characteristically cracks, voids or hillocks in the metal lines, causing open-circuits. The majority of research in the electromigration of aluminum conductors examines the formation of these voids and hillocks in the linestripes. This is unfortunate since experiments have shown that short-circuits caused by whisker formation between adjacent stripes or between multi-level structures

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20

Zschech, Ehrenfried, Moritz Andreas Meyer, Marco Grafe, and Gerd Schneider. "Challenges of electromigration." Materials Testing 46, no. 10 (2004): 513–16. http://dx.doi.org/10.3139/120.100619.

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21

Abella, Jaume, and Xavier Vera. "Electromigration for microarchitects." ACM Computing Surveys 42, no. 2 (2010): 1–18. http://dx.doi.org/10.1145/1667062.1667066.

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22

Jozefowicz, M. E., and N. ‐C Lee. "Electromigration vs SIR." Circuit World 19, no. 4 (1993): 28–32. http://dx.doi.org/10.1108/eb046223.

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23

Ho, P. S., and T. Kwok. "Electromigration in metals." Reports on Progress in Physics 52, no. 3 (1989): 301–48. http://dx.doi.org/10.1088/0034-4885/52/3/002.

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24

Krumbein, S. J. "Metallic electromigration phenomena." IEEE Transactions on Components, Hybrids, and Manufacturing Technology 11, no. 1 (1988): 5–15. http://dx.doi.org/10.1109/33.2957.

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25

Lloyd, J. R., M. W. Lane, E. G. Liniger, C. K. Hu, T. M. Shaw, and R. Rosenberg. "Electromigration and adhesion." IEEE Transactions on Device and Materials Reliability 5, no. 1 (2005): 113–18. http://dx.doi.org/10.1109/tdmr.2005.846308.

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26

Witt, C., V. Calero, C. K. Hu, and G. Bonilla. "Electromigration: Void Dynamics." IEEE Transactions on Device and Materials Reliability 16, no. 4 (2016): 446–51. http://dx.doi.org/10.1109/tdmr.2016.2521543.

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27

Krumbein, S. "Metallic Electromigration Phenomena." IEEE Transactions on Components, Hybrids, and Manufacturing Technology 11, no. 1 (1988): 5–15. http://dx.doi.org/10.1109/tchmt.1988.1134880.

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28

Lim, M. K., V. A. Chouliaras, C. L. Gan, and V. M. Dwyer. "Bidirectional electromigration failure." Microelectronics Reliability 53, no. 9-11 (2013): 1261–65. http://dx.doi.org/10.1016/j.microrel.2013.07.017.

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29

Pierce, D. G., and P. G. Brusius. "Electromigration: A review." Microelectronics Reliability 37, no. 7 (1997): 1053–72. http://dx.doi.org/10.1016/s0026-2714(96)00268-5.

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30

Lodder, A. "Electromigration theory unified." Europhysics Letters (EPL) 72, no. 5 (2005): 774–80. http://dx.doi.org/10.1209/epl/i2005-10306-9.

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31

Scorzoni, Andrea, Gian Luigi Baldini, and Candida Caprile. "Ohmic contact electromigration." Microelectronics Reliability 32, no. 1-2 (1992): 167–74. http://dx.doi.org/10.1016/0026-2714(92)90096-4.

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32

Mirpuri, Kabir Kumar, and Jerzy A. Szpunar. "Orientation and Microstructure Dependence of Electromigration Damage in Damascene Cu Interconnect Lines." Materials Science Forum 495-497 (September 2005): 1443–48. http://dx.doi.org/10.4028/www.scientific.net/msf.495-497.1443.

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In the present paper we report the texture and microstructure dependence of electromigration damage in Cu interconnects. This was made possible by ncorporating a sophisticated set of instrumentation within the SEM which enabled in-situ monitoring of the electromigration defects. The electron backscatter diffraction (EBSD) maps were obtained before and after the completion of the electromigration tests. Thus, by comparing the maps before and after the failure it was possible to associate the texture and microstructure with both failure sites - voids and hillocks. Results from lines down to 130

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33

Maskowitz, J. V., W. E. Rhoden, D. R. Kitchen, R. E. Omlor, and P. F. Lloyd. "Mark II Test Vehicle Holder for in Situ Viewing of Integrated Circuit Electr0Migrati0N." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 884–85. http://dx.doi.org/10.1017/s0424820100145765.

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A patent pending test holder was designed to support research in electromigration using a JEOL 100 CX STEM. The holder provides electrical connections for an aluminum stripe test vehicle which allows the electromigration process to be conducted within the microscope.The holder is specifically designed for use in conjunction with a JEOL-type electron microscope side entry goniometer. Four leads provide the ability to power three different test stripes on one test vehicle. This allows three separate electromigration runs/observations in-situ without removing the test vehicle from the STEM, thus

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34

Nucci, J., S. Krämer, E. Arzt, and C. A. Volkert. "Local Strains Measured in Al Lines During Thermal Cycling and Electromigration Using Convergent-beam Electron Diffraction." Journal of Materials Research 20, no. 7 (2005): 1851–59. http://dx.doi.org/10.1557/jmr.2005.0231.

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In situ local measurement of sub-threshold strains generated during the electromigration of a 0.3-μm-wide Al interconnect was performed for the first time using convergent-beam electron diffraction (CBED) in a transmission electron microscope (TEM). Thermal strains were also analyzed and provided verification for the electromigration analysis. Spatially averaged strains resulting from thermal cycling and electromigration quantitatively agree with models and data from previous studies. However, the local strains exhibited variations as large as 2 × 10−3. After eliminating other possible mechani

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35

Gan, Zhenghao, A. M. Gusak, W. Shao, et al. "Analytical modeling of reservoir effect on electromigration in Cu interconnects." Journal of Materials Research 22, no. 1 (2007): 152–56. http://dx.doi.org/10.1557/jmr.2007.0001.

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Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the work of electron wind and surface/interface energy. It was found that there exists a critical extension length beyond which increasing extension lengths ceases to prolong electromigration lifetimes. The critical extension length is a function of void size and electrical field gradient. The analytical model agrees very well with existing experimental results. Some design guide

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36

Yang, Shih-Chi, Dinh-Phuc Tran, and Chih Chen. "Recrystallization and Grain Growth in Cu-Cu Joints under Electromigration at Low Temperatures." Materials 16, no. 17 (2023): 5822. http://dx.doi.org/10.3390/ma16175822.

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The behavior of recrystallization and grain growth was examined in Cu-Cu joints during electromigration at 150 °C. Recrystallization and grain growth were observed in all the joints after electromigration for 9000 h. Voiding was formed in Cu current-feeding lines and in bonding interfaces, and resistance increased with time due to the void formation. However, instead of rising abruptly, the resistance of certain Cu joints dropped after 7000 h. Microstructural analysis revealed that a large grain growth occurred in these joints at 150 °C, and the bonding interface was eliminated. Therefore, the

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Oparowski, J. M., T. S. Sriram, and V. Ambrose. "The Determination of Copper Composition Profiles in Semiconductor Device Aluminum Interconnect Electromigration Test Lines using Electron Probe Microanalysis (EPMA)." Microscopy and Microanalysis 4, S2 (1998): 618–19. http://dx.doi.org/10.1017/s1431927600023217.

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Extensive long range transport of copper has been observed in polycrystalline aluminum-copper (Al-Cu) interconnects subjected to accelerated electromigration testing. Cu depletion is believed to be the rate limiting factor for electromigration damage accumulation. It is not clear if this is also the case for Al-Cu interconnects with bamboo/near-bamboo microstructures. In order to understand this phenomenon, Cu transport under electromigration conditions in bamboo microstructures has to be characterized quantitatively. This paper describes the procedure used to determine Cu distributions on a s

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38

Makhviladze, T. M., and M. E. Sarychev. "Kinetics of electromigration mass transfer in micro- and nanoelectronics interface elements depending on the strength of thin-film junctions." Mikroèlektronika 53, no. 3 (2024): 232–42. http://dx.doi.org/10.31857/s0544126924030056.

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The theoretical model proposed earlier by the authors, which describes the interrelation of strength and electromigration (diffusion) properties of interfaces formed by joined materials, has been perfected and extended. Within the framework of the developed model, a linear relationship between the values of the work of reversible interface separation Wa and the activation energy of electromigration in the interface HEM was established. The coefficients of the obtained relation are estimated and compared with experimental data on the study of electromigration in a copper conductors covered with

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39

Li, Xueqin, Linchun Gao, Tao Ni, et al. "Analysis of Degradation of Electromigration Reliability of Au-Al and OPM Wire Bonded Contacts at 250 °C Using Resistance Monitoring Method." Micromachines 14, no. 3 (2023): 640. http://dx.doi.org/10.3390/mi14030640.

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The ongoing trend towards miniaturization and increased packaging density has exacerbated the reliability problem of Au-Al heterogeneous metal bonding structures in high-temperature environments, where extreme temperatures and high current pose a serious challenge. In order to address this issue, the present study aims to investigate the electromigration reliability of Au-Al bonding by comparing the conventional heterogeneous contacts with OPM structures, which are homogeneous contacts. A novel bonding layout was developed to precisely detect the resistance and obtain stage changes in electrom

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40

Dohle, Rainer, Stefan Härter, Andreas Wirth та ін. "Electromigration Performance of Flip-Chips with Lead-Free Solder Bumps between 30 μm and 60 μm Diameter". International Symposium on Microelectronics 2012, № 1 (2012): 000891–905. http://dx.doi.org/10.4071/isom-2012-wp41.

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As the solder bump sizes continuously decrease with scaling of the geometries, current densities within individual solder bumps will increase along with higher operation temperatures of the dies. Since electromigration of flip-chip interconnects is highly affected by these factors and therefore an increasing reliability concern, long-term characterization of new interconnect developments needs to be done regarding the electromigration performance using accelerated life tests. Furthermore, a large temperature gradient exists across the solder interconnects, leading to thermomigration. In this s

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41

Akbar, Muhammad Ali, Kerista Tarigan, Syahrul Humaidi, Dadan Ramdan, and Yulianta Siregar. "Electromigration Effects in Overcurrent PVC-Insulated Copper Wire: Failure and Deformation Impacts." Science and Technology Indonesia 9, no. 3 (2024): 735–44. http://dx.doi.org/10.26554/sti.2024.9.3.735-744.

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Electromigration is a critical issue in materials science and electrical engineering, significantly impacting the reliability and efficiency of electrical systems. This study investigates the electromigration behavior of PVC-insulated copper wires under various overcurrent conditions, focusing on material degradation and electrical performance. Copper cables, identified as 046620.3 Eterna CU/PVC 1.5 mm2, were subjected to currents ranging from 0 to 110 A. The mean time to failure (MTTF) was calculated using Black’s equation, revealing a sharp decline in MTTF with increasing current density. Su

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42

Adhikari, Aparna, Arijit Roy, and Cher Ming Tan. "Atomic drift-less electromigration model for submicron copper interconnects." YMER Digital 21, no. 07 (2022): 1134–46. http://dx.doi.org/10.37896/ymer21.07/94.

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Electromigration in chip level interconnect is commonly described by atomic drift due to electron-wind force that arises from electron-ion momentum transfer. As an alternative to this model, in early 1980’s, Sah proposed a two dimensional analytical ‘void-surface bond-breaking’ model by dropping the atomic drift term that resulted from electron-wind force (in his book ‘Fundamentals of Solid-State Electronics’) and the rate of change of area of void is computed. Due to the continuous down scaling and evolution of interconnect patterning technologies, the void growth process in modern interconne

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43

Gladkikh, A., Y. Lereah, M. Karpovski, A. Palevski, and Yu S. Kaganovskii. "Activation Energy of Electromigration in Copper Thin Film Conductor Lines." MRS Proceedings 428 (1996). http://dx.doi.org/10.1557/proc-428-55.

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AbstractActivation energy of electromigration damage was determined as 1.2 eV for Cu lines, indicating grain boundary paths for electromigrationo The surface diffusion was found to play a role during electromigration in Cu and impeded the failure process.

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44

Ren, Fei, Jae-Woong Nah, Hua Gan, et al. "Effect of Electromigration on Mechanical Behavior of Solder Joints." MRS Proceedings 863 (2005). http://dx.doi.org/10.1557/proc-863-b10.2.

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AbstractElectromigration in solder joints causes a void formation between intermetallic compounds (IMC) and solder at the cathode. The effect of electromigration in mechanical test of Cu wires joined by solder was performed. The current density of electromigration was 1∼5×103 A/cm2. The working temperature was 100∼150°C. Tensile stress and shear stress were applied either before or after electromigration. The tensile strain rate was 3 μm/min. We observed that, without electromigration, tensile stress caused a ductile break at the middle of solders because the solder was softer. On the other ha

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45

Sorbello, Richard S. "Basic Concepts in Electromigration." MRS Proceedings 225 (1991). http://dx.doi.org/10.1557/proc-225-3.

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ABSTRACTA review of basic concepts in electromigration is presented and recent theoretical developments are discussed. The microscopic origin of the driving force for electromigration is elucidated and, as an example, the driving force exerted on an impurity near a grain boundary is calculated in a jellium model. A connection is made between the calculated electromigration driving force and 1/f-noise measurements. Results of the first computer simulations of electromigration at the microscopic level are presented. It is found that dynamical recoil effects can lead to a significant enhancement

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46

Ross, C. A., and J. E. Evetts. "A Study of Threshold and Incubation Behaviourduring Electromigration in thin Film Metallisation." MRS Proceedings 108 (1987). http://dx.doi.org/10.1557/proc-108-319.

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ABSTRACTWe have previously described a microstructural model for electromigration in thin film metallisation, based on the concept of a stress-driven backwards flux opposing the forwards electromigration flux. The model can be used to calculate the build-up of stress in a metallisation track subject to arbitrary variations in electromigration flux, and to predict both the location of electromigration damage and incubation times before its appearance. In this paper we present an experimental study of electromigration behaviour in thin aluminium films on a niobium substrate and relate the result

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47

Pramanick, S., D. D. Brown, V. Pham, et al. "Effect of Mechanical Stress on Electromigration Failure Mode During Accelerated Electromigration Tests." MRS Proceedings 356 (1994). http://dx.doi.org/10.1557/proc-356-507.

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AbstractThe electromigration failure mode and failure rate during accelerated electromigration testing is expected to be strongly affected by the mechanical stress state of Al lines, since tensile stress and compressive stress states favor void growth and hillock formations (extrusions), respectively. During electromigration testing, the mechanical stress state or evolution of mechanical stress of an interconnect is a function of current density and temperature, the two principal variables in electromigration testing. In our experiments, we have observed two different electromigration failure

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48

Korhonen, M. A., P. Børgesen, and Che-Yu Li. "Electromigration in Aluminum Based Interconnects of VLSI-Microcircuits, with and without Preceding Stress-Migration Damage." MRS Proceedings 239 (1991). http://dx.doi.org/10.1557/proc-239-695.

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ABSTRACTIn the narrow, confined metal interconnects used in the chip level, electromigration flux is resisted by the evolution of mechanical stresses in the interconnects. Recently there has been a growing concern on the effects of preceding stress-migration on the subsequent electromigration damage. We present here an electromigration model, which is able to address the effects of stress-migration and mechanical stresses on electromigration lifetime.

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49

Jing, JianPing, Lihua Liang, and Guang Meng. "Electromigration Simulation for Metal Lines." Journal of Electronic Packaging 132, no. 1 (2010). http://dx.doi.org/10.1115/1.4000716.

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As the electronics industry continues to push for high performance and miniaturization, the demand for higher current densities, which may cause electromigration failures in an IC, interconnects. Electromigration is a phenomenon that metallic atoms constructing the line are transported by electron wind. The damage induced by electromigration appears as the formation of voids and hillocks. A numerical simulation method for electromigration void incubation, and afterwards, void propagation, based on commercial software ANSYS Multiphysics and FORTRAN code, is presented in this paper. The electron

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50

Gladkikh, A., Y. Lereah, M. Karpovski, A. Palevski, and Yu S. Kaganovskii. "Activation Energy of Electromigration in Copper Thin Film Conductor Lines." MRS Proceedings 427 (1996). http://dx.doi.org/10.1557/proc-427-121.

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AbstractActivation energy of electromigration damage was determined as 1.2 eV for Cu lines, indicating grain boundary paths for electromigration. The surface diffusion was found to play a role during electromigration in Cu and impeded the failure process.

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