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Relevant bibliographies by topics / Electron Avalanche

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Academic literature on the topic 'Electron Avalanche'

Author: Grafiati

Published: 4 June 2021

Last updated: 14 February 2022

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Journal articles on the topic "Electron Avalanche"

1

Ficker, T. "Electron Avalanche Statistics." Acta Physica Polonica A 116, no. 6 (2009): 1018–20. http://dx.doi.org/10.12693/aphyspola.116.1018.

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Yasuda, Hirotsugu, Loic Ledernez, Fethi Olcaytug, and Gerald Urban. "Electron dynamics of low-pressure deposition plasma." Pure and Applied Chemistry 80, no. 9 (2008): 1883–92. http://dx.doi.org/10.1351/pac200880091883.

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When the electric field in the dark gas phase reaches the threshold value, an electron avalanche (breakdown) occurs, which causes dissociation of organic molecules, excitation of chemically reactive molecular gas, and/or ionization of atomic gas, depending on the type of gas involved. The principles that govern these electron-impact reactions are collectively described by the term "electron dynamics". The electron-impact dissociation of organic molecules is the key factor for the deposition plasma. The implications of the interfacial avalanche of the primary electrons on the deposition plasma and also other plasma processes are discussed. The system dependency of low-pressure plasma deposition processes is an extremely important factor that should be reckoned, because the electron dynamic reactions are highly dependent on every aspect of the reaction system. The secondary electron emission from the cathode is a misinterpretation of the interfacial electron avalanche of the primary electrons described in this paper.

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Babich, Leonid P. "Relativistic runaway electron avalanche." Uspekhi Fizicheskih Nauk 190, no. 12 (2020): 1261–92. http://dx.doi.org/10.3367/ufnr.2020.04.038747.

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Kinch, M. A., J. D. Beck, C. F. Wan, F. Ma, and J. Campbell. "HgCdTe electron avalanche photodiodes." Journal of Electronic Materials 33, no. 6 (2004): 630–39. http://dx.doi.org/10.1007/s11664-004-0058-1.

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Pinilla, Omar Rodriguez, Fernando Díaz Ortiz, Carlos Gómez, and Mikel F. Hurtado M. "Factor Fluctuation in Super Short Avalanche Electron Propagation." European Journal of Engineering Research and Science 3, no. 12 (2018): 74–77. http://dx.doi.org/10.24018/ejers.2018.3.12.1017.

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Compact Intracloud Discharges (CID) and most of Transient Luminous Events (TLE) are two known microsecond-pulse discharges related to electrical activity of thunderclouds. However, their nature and relationship with other cloud discharges still unclear. Few theoretical models had been proposed to explain the nature of this phenomenon. Some proposed models involved the effects of runaway electron avalanches (REA) and relativistic runaway electron avalanches (RREA) as essential part of the aforementioned discharges. In this work, an initial stage is done to propose new models to explain behavior of CID and TLE. Thus, it is simulated the propagation of a charged particle for a short distance, emulating a supershort avalanche electron beam (SAEB). Specifically, first results presented come from simulating the displacement of a charged particle and finding its fluctuation factor by means of perturbations theory. Other works on this issue has been done using different approaches namely, Feynman integrals with similar outcomes. Perturbation theory is used because in order to allow a future interaction in the model among particles, the terms of the perturbation series can be manipulated using Feynman diagrams. Initial conditions assumed for this work are: unit cell, anisotropic volume and N molecules inside the volume with no interaction. Three relevant conclusions can be exposed from the results, the simulation is coherent with the obtained results using Feynman integrals approach and the equations make possible to predict the amount of photons generated during the avalanche. Finally, it is possible to model charged particle generation through annihilation of variations of electric potential. Future work includes update the model to consider the interaction among molecules and perform experimental validation of the proposed model.

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Sarria, David, Casper Rutjes, Gabriel Diniz, et al. "Evaluation of Monte Carlo tools for high-energy atmospheric physics II: relativistic runaway electron avalanches." Geoscientific Model Development 11, no. 11 (2018): 4515–35. http://dx.doi.org/10.5194/gmd-11-4515-2018.

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Abstract. The emerging field of high-energy atmospheric physics studies how high-energy particles are produced in thunderstorms, in the form of terrestrial γ-ray flashes and γ-ray glows (also referred to as thunderstorm ground enhancements). Understanding these phenomena requires appropriate models of the interaction of electrons, positrons and photons with air molecules and electric fields. We investigated the results of three codes used in the community – Geant4, GRanada Relativistic Runaway simulator (GRRR) and Runaway Electron Avalanche Model (REAM) – to simulate relativistic runaway electron avalanches (RREAs). This work continues the study of Rutjes et al. (2016), now also including the effects of uniform electric fields, up to the classical breakdown field, which is about 3.0 MV m−1 at standard temperature and pressure. We first present our theoretical description of the RREA process, which is based on and incremented over previous published works. This analysis confirmed that the avalanche is mainly driven by electric fields and the ionisation and scattering processes determining the minimum energy of electrons that can run away, which was found to be above ≈10 keV for any fields up to the classical breakdown field. To investigate this point further, we then evaluated the probability to produce a RREA as a function of the initial electron energy and of the magnitude of the electric field. We found that the stepping methodology in the particle simulation has to be set up very carefully in Geant4. For example, a too-large step size can lead to an avalanche probability reduced by a factor of 10 or to a 40 % overestimation of the average electron energy. When properly set up, both Geant4 models show an overall good agreement (within ≈10 %) with REAM and GRRR. Furthermore, the probability that particles below 10 keV accelerate and participate in the high-energy radiation is found to be negligible for electric fields below the classical breakdown value. The added value of accurately tracking low-energy particles (<10 keV) is minor and mainly visible for fields above 2 MV m−1. In a second simulation set-up, we compared the physical characteristics of the avalanches produced by the four models: avalanche (time and length) scales, convergence time to a self-similar state and energy spectra of photons and electrons. The two Geant4 models and REAM showed good agreement on all parameters we tested. GRRR was also found to be consistent with the other codes, except for the electron energy spectra. That is probably because GRRR does not include straggling for the radiative and ionisation energy losses; hence, implementing these two processes is of primary importance to produce accurate RREA spectra. Including precise modelling of the interactions of particles below 10 keV (e.g. by taking into account molecular binding energy of secondary electrons for impact ionisation) also produced only small differences in the recorded spectra.

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Tan, B. Y., Shuang Gen Zhang, Z. W. Zhang, and S. B. Jiang. "The Evolution of Free Electron Density during the Interaction between Femtosecond Pulse and Lithium Niobate Crystal." Applied Mechanics and Materials 130-134 (October 2011): 1458–61. http://dx.doi.org/10.4028/www.scientific.net/amm.130-134.1458.

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The nonlinear ionization process was discussed in detail induced by femtosecond pulse in Lithum Niobate (LN) crystal. The MPI provides “seed” electrons for avalanche ionization process, and avalanche becomes significant when the density of electron created by MPI over 1020 cm-3. Recombination process leads to an obvious drop of electron density and then a dynamic equilibrium is achieved between the generation of electron and the recombination process, and the density is dependent on the incoming field.

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Babich, L. P. "Radial expansion of electron avalanche." Radiophysics and Quantum Electronics 28, no. 2 (1985): 163–67. http://dx.doi.org/10.1007/bf01035060.

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Beck, J., C. Wan, M. Kinch, et al. "The HgCdTe electron avalanche photodiode." Journal of Electronic Materials 35, no. 6 (2006): 1166–73. http://dx.doi.org/10.1007/s11664-006-0237-3.

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Tarasenko, V. F., E. H. Baksht, A. G. Burachenko, I. D. Kostyrya, M. I. Lomaev, and D. V. Rybka. "Supershort avalanche electron beam generation in gases." Laser and Particle Beams 26, no. 4 (2008): 605–17. http://dx.doi.org/10.1017/s0263034608000670.

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AbstractThis paper reports on the properties of a supershort avalanche electron beam generated in the air or other gases under atmospheric pressure and gives the analysis of a generation mechanism of supershort avalanche electron beam, as well as methods of such electron beams registration. It is reported that in the air under the pressure of 1 atm, a supershort (<100 ps) avalanche electron beam is formed in the solid angle more than 2π steradian. The electron beam has been obtained behind a 45 µm thick Al-Be foil in SF6 and Xe under the pressure of 2 atm, and in He, under the pressure of about 15 atm. It is shown that in SF6 under the high pressure (>1 atm) duration (full width at half maximum) of supershort avalanche electron beam pulse is about 150 ps.

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Dissertations / Theses on the topic "Electron Avalanche"

1

Ker, Pin Jern. "Development of high speed low noise InAs electron avalanche photodiodes." Thesis, University of Sheffield, 2012. http://etheses.whiterose.ac.uk/3219/.

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Heller, Eric. "Ultra low signals in ballistic electron emission microscopy." Columbus, Ohio : Ohio State University, 2003. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1060979803.

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Thesis (Ph. D.)--Ohio State University, 2003.<br>Title from first page of PDF file. Document formatted into pages; contains xvii, 237 p.; also includes graphics. Includes abstract and vita. Advisor: Jonathan P. Pelz, Dept. of Physics. Includes bibliographical references (p. 232-237).

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Ramirez, Julian David Rodriguez. "Desempenho de dispositivos fotodetectores com multiplicação de elétrons por avalanche." Universidade de São Paulo, 2010. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-29112016-134743/.

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Neste trabalho são apresentados os resultados obtidos no desenvolvimento de um sistema especificado para realizar testes na caracterização de dispositivos fotodetectores como fotodiodos de avalanche. O sistema de ensaios elaborado pretende auxiliar com na caracterização da fotodetecção em dispositivos de acoplamento de cargas com multiplicação de elétrons (EMCCD). O objetivo deste trabalho é avaliar o desempenho dos dispositivos fotodetectores para caracterizar os parâmetros mais significativos no processo da transdução óptica de modo a colaborar no projeto da eletrônica embarcada de controle e leitura da informação contida no EMCCD. A tecnologia da multiplicação dos elétrons em dispositivos CCD e diodos de avalanche têm aplicações importantes na vigilância de ambiente de luminosidade reduzida, astronomia, além de outras aplicações de imagens científicas incluindo as de baixo nível de bioluminescência para identificação de drogas e aplicações da engenharia genética. Para efeito de avaliação do desempenho do sistema fotodetector foi necessário desenvolver uma infra-estrutura para ter controle adequado da temperatura de operação do EMCCD. Foram nomeadas as opções com uma montagem de resfriamento com células Peltier e uma opção por criogenia resfriada com nitrogênio líquido. Os resultados obtidos são úteis na detecção de sinais luminosos ultrafracos minimizando o ruído do detector na aquisição de imagens com o auxilio da instrumentação de um filtro óptico sintonizável que será integrado no telescópio SOAR de 4 metros, instalado no Chile, para observações melhoradas com óptica adaptativa.<br>This work presents the results obtained in the development of a system specified to perform tests in the characterization of photo-detectors devices such as avalanche photodiodes. The test system is prepared to contribute to the characterization of the photo-detection in charge-coupled devices with electron multiplication (EMCCD). The objective of this study is to evaluate the performance of photo-detectors devices to characterize the most significant parameters in the optic transduction in order to collaborate in the project of an embedded electronic system for controlling and reading the information contained with the EMCCD. The technology of the electron multiplication in CCD devices and avalanche diodes has important applications in monitoring the environment of low light, astronomy and other scientific imaging applications including the low level of bioluminescence for the identification of drugs and applications of genetic engineering. For purposes of assessing the performance of the photo-detector it was necessary to develop an infrastructure to have proper control of the operating temperature of the EMCCD. Options were named with a montage of Peltier cell cooling and a choice of cryogenically cooled with liquid nitrogen. The results are useful in the detection of ultra weak light signals while minimizing detector noise during the acquisition of images from instrument comprising an optical tunable filter, that will be integrated into SOAR 4 meters telescope, installed in Chile, for observations improved with adaptive optics.

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Tsuchiya, Kenji, Hitoshi Okubo, Tsugunari Ishida, Hidenori Kato, and Katsumi Kato. "Influence of Surface Charges on Impulse Flashover Characteristics of Alumina Dielectrics in Vacuum." IEEE, 2009. http://hdl.handle.net/2237/14600.

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LIMA, IARA B. de. "Medidas do primeiro coeficiente townsend de ionização em gases inibidores de descargas." reponame:Repositório Institucional do IPEN, 2014. http://repositorio.ipen.br:8080/xmlui/handle/123456789/10626.

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Made available in DSpace on 2014-10-09T12:42:33Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T14:02:06Z (GMT). No. of bitstreams: 0<br>Tese (Doutoramento)<br>IPEN/T<br>Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP

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Haidara, Modibo. "Impulsions de Trichel dans le cyclohexane liquide et les gaz comprimés." Grenoble 1, 1988. http://www.theses.fr/1988GRE10160.

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Resultats d'etude de la conduction electrique de liquides non polaires tres purs (cyclohexane, n-propane) en geometrie pointe-plan, en fonction du rayon de courbure de la pointe et de la pression hydrostatique (p<->10**(7)pa)

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Brouri, Dalil. "Nanoanalyse du champ électrique local en section transverse dans les diodes Si et SiC par le courant induit en microscopie électronique en transmission (STEBIC)." Paris 6, 2001. http://www.theses.fr/2001PA066400.

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Rafferty, Helen Marie. "Electronic transport properties of silicon-germanium single photon avalanche detectors." Thesis, University of Leeds, 2017. http://etheses.whiterose.ac.uk/20373/.

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Single photon avalanche detectors (SPADs) have uses in a number of applications, including time-of-flight ranging, quantum key distribution and low-light sensing. Germanium has an absorption edge at the key communications wavelengths of 1.3-1.55um, and can be grown epitaxially on silicon, however, SiGe SPADs exhibit a number of performance limitations, including low detection efficiencies, high dark counts and afterpulsing. Unintentional doping may affect electronic performance, and band-to-band tunnelling at high operational voltages SPADs may lead to noise currents. Additionally, defects in the Si/Ge interface lead to trap states within the bandgap and contribute to afterpulsing. This work investigates a range of critical performance parameters in SiGe SPADs. The effect of intentional and unintentional doping in SPADs on electric fields, potential profiles and carrier transport in the device is investigated, and optimal dopant profiles for a SiGe SPAD discussed. The dependence of band-to-band tunnelling currents in Ge on bias voltage, Ge thickness and temperature is investigated, and these currents are compared to other sources of noise currents in SPADs. DFT calculations of misfit dislocation structures in Ge are undertaken, to establish electronic bandstructures and optimised geometries for these defects, and identify trap states in the bandgap, which may contribute to afterpulsing and dark counts in SPADs. A number of directions for continuing work are identified, to progress understanding of noise currents and afterpulsing in SPADs.

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Cordy, Paul David. "Applied automated numerical avalanche forecasting using electronic weather sensor data." Thesis, University of British Columbia, 2007. http://hdl.handle.net/2429/32241.

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Numerical avalanche prediction was used for Canadian highways avalanche forecasting for ten years before changes in information technology infrastructure rendered the original numerical avalanche forecasting model incompatible and therefore obsolete. Now these efforts are being renewed with greater automation by the use of electronic weather sensor data. Use of this data presents several challenges and opportunities. Automated hourly observations generate large datasets that require systems for filtering historic and current data; as well as fitness testing routines that dynamically extract independent validation samples from serially correlated datasets. These weather sensor data manipulation systems offer several advantages over traditional avalanche prediction models that are based on manually observed weather and surface snow information. Rapid dataset generation enables spatial scaling of predictions, easy generation and testing of memory variables, model comparison, and visual verification of predicted avalanche probability time series. These features will facilitate operational implementation of avalanche forecasting models for applied computer assisted avalanche forecasting-in highways avalanche control programs across British Columbia, Canada. In the winter of 2006/7, the Avalanche Forecast System (AFS) was applied in two avalanche prone transportation corridors. The AFS uses only electronic weather sensor data and incorporates all of the aforementioned capabilities. A nearest neighbour analysis is used to generate avalanche probabilities, however the AFS data management systems could also be made to operate with classical linear and modern non-linear statistical prediction methods. Automated filters eliminate erroneous data dynamically, permit investigation of various prediction targets (such as natural avalanche occurrences, or avalanches of different size classes), and a jackknife cross-validation routine generates fitness statistics by selecting test cases that are not temporally autocorrelated. The AFS was applied operationally in Kootenay Pass, near Salmo, BC, and also at Bear Pass, near Stewart, BC, where accuracy of 76% +/-2% and 71% +/-2% were achieved respectively.<br>Arts, Faculty of<br>Geography, Department of<br>Graduate

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Burns, Mark James. "Modelling and analysis of noise in advanced avalanche photodetectors." Thesis, Bangor University, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333616.

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Books on the topic "Electron Avalanche"

1

Microwave and millimeter-wave power generation in silicon carbide (SiC) IMPATT devices. National Aeronautics and Space Administration, 1989.

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I, Haddad G., Mains R. K, and United States. National Aeronautics and Space Administration., eds. Microwave and millimeter-wave power generation in silicon carbide (SiC) IMPATT devices. National Aeronautics and Space Administration, 1989.

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Book chapters on the topic "Electron Avalanche"

1

Baker, I., and M. Kinch. "HgCdTe Electron Avalanche Photodiodes (EAPDs)." In Mercury Cadmium Telluride. John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9780470669464.ch21.

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Shaw, Melvin P., Vladimir V. Mitin, Eckehard Schöll, and Harold L. Grubin. "The Avalanche Diode." In The Physics of Instabilities in Solid State Electron Devices. Springer US, 1992. http://dx.doi.org/10.1007/978-1-4899-2344-8_4.

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Kawashima, R., K. Matsui, K. Komurasaki, J. A. Ofosu, T. Shimano, and H. Koizumi. "A One-Dimensional Modeling of Seed Electron Generation and Electron Avalanche in Laser-Supported Detonation." In 31st International Symposium on Shock Waves 1. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-91020-8_25.

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Mahajan, S. M., and K. W. Lam. "Contribution of a Solid Insulator to an Electron Avalanche in Nitrogen Gas." In Gaseous Dielectrics VI. Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3706-9_37.

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Lippens, D., and J. L. Nieruchalski. "Three Picosecond Oscillations in Avalanche Electron-Hole Plasma Induced by Energy Relaxation Phenomena." In High-Speed Electronics. Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82979-6_9.

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Pronko, P. P., P. A. VanRompay, G. Mourou, et al. "Electron-Lattice Heating from Avalanche Ionization in Silicon with Near Infrared Ultrafast Laser Pulses." In Springer Series in Chemical Physics. Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-642-80314-7_202.

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Zemlyakov, V. E., V. I. Egorkin, S. N. Vainshtein, A. V. Maslevtsov, and Alexey Filimonov. "Investigation of Electro-Physical and Transient Parameters of Energy Accumulating Capacitors Applied in Nanosecond and Sub-nanosecond High-Current Avalanche Switches." In Lecture Notes in Computer Science. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-46301-8_64.

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Ishii, T. Koryu. "Microwave Avalanche Diodes." In Practical Microwave Electron Devices. Elsevier, 1990. http://dx.doi.org/10.1016/b978-0-12-374700-6.50008-8.

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Ishii, T. Koryu. "Impact Avalanche Transit Time Diodes." In Practical Microwave Electron Devices. Elsevier, 1990. http://dx.doi.org/10.1016/b978-0-12-374700-6.50010-6.

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J. Marshall, Andrew R. "The InAs Electron Avalanche Photodiode." In Advances in Photodiodes. InTech, 2011. http://dx.doi.org/10.5772/14769.

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Conference papers on the topic "Electron Avalanche"

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Cooray, V., G. Cooray, T. Marshall, J. Dwyer, and S. Arabshahi. "Electric field of a relativistic electron avalanche." In 2012 International Conference on Lightning Protection (ICLP 2012). IEEE, 2012. http://dx.doi.org/10.1109/iclp.2012.6344240.

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Beck, Jeffrey D., Chang-Feng Wan, Michael A. Kinch, et al. "The HgCdTe electron avalanche photodiode." In Optical Science and Technology, the SPIE 49th Annual Meeting, edited by Randolph E. Longshore and Sivalingam Sivananthan. SPIE, 2004. http://dx.doi.org/10.1117/12.565142.

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Apanasovich, Vladimir V., and Eugene G. Novikov. "Single electron characteristics of detectors with avalanche multiplication of electrons." In International Conference on Interferometry '94, edited by Malgorzata Kujawinska and Krzysztof Patorski. SPIE, 1994. http://dx.doi.org/10.1117/12.195957.

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Johnson, C. Bruce, Mike J. Iosue, R. Rusack, and P. Cushman. "Electron-bombarded silicon avalanche diode PMT development." In Optical Engineering and Photonics in Aerospace Sensing, edited by Sankaran Gowrinathan, C. Bruce Johnson, and James F. Shanley. SPIE, 1993. http://dx.doi.org/10.1117/12.161412.

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Ker, Pin Jern, Andrew Marshall, Rajiv Gomes, John Paul David, Jo Shien Ng, and Chee Hing Tan. "InAs Electron-Avalanche Photodiodes: From leaky diodes to extremely low noise avalanche photodiodes." In 2011 IEEE Photonics Conference (IPC). IEEE, 2011. http://dx.doi.org/10.1109/pho.2011.6110533.

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Park, J. K., and I. Yun. "Modeling of avalanche gain for high-speed InP/InGaAs avalanche photodiodes." In 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2008. http://dx.doi.org/10.1109/edssc.2008.4760679.

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Bulling, Anthony F., and Ian Underwood. "Accelerated Electron Detection Using Single Photon Avalanche Diodes." In 2018 IEEE Sensors. IEEE, 2018. http://dx.doi.org/10.1109/icsens.2018.8589781.

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Kishimoto, Shunji. "An Avalanche Diode Electron Detector for Observing NEET." In SYNCHROTRON RADIATION INSTRUMENTATION: Eighth International Conference on Synchrotron Radiation Instrumentation. AIP, 2004. http://dx.doi.org/10.1063/1.1757936.

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Jiao, Jian, and Zhixiong Guo. "Analysis of USP Laser Induced Ablation Threshold in Transparent Aqueous Tissue." In ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/mnhmt2012-75175.

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The ultrashort pulsed (USP) laser induced plasma-mediated ablation in transparent media is modeled and studied in this work. We propose that a certain number of free electrons are required to trigger the avalanche ionization for the first time. Based on this assumption, the ablation process is postulated as two separate processes — the multiphoton and avalanche ionizations. For USP laser induced ablation in the transparent corneal epithelium at 800 nm, the critical seed free-electron density and the time to initialize the avalanche ionization for pulse widths from picoseconds down to the femtoseconds range are calculated. It is found that the critical seed free-electron density decreases as the pulse width increases, obeying a tp−5.65 rule. Moreover, this model is also extended to the estimation of crater sizes in USP laser ablation of polydimethylsiloxane (PDMS). The crater sizes ablated in a PDMS by a 900 fs pulsed laser at wavelength 1552 nm are modeled using the present model, and the results match with the existing experimental measurements.

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Marshall, A. R. J., P. Vines, S. Xie, J. P. R. David, and C. H. Tan. "High gain InAs electron-avalanche photodiodes for optical communication." In 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM). IEEE, 2010. http://dx.doi.org/10.1109/iciprm.2010.5516221.

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Reports on the topic "Electron Avalanche"

1

Jayakumar, R., H. H. Fleischmann, and S. J. Zweben. Collisional avalanche exponentiation of run-away electrons in electrified plasmas. Office of Scientific and Technical Information (OSTI), 1992. http://dx.doi.org/10.2172/10166636.

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Jayakumar, R., H. H. Fleischmann, and S. J. Zweben. Collisional avalanche exponentiation of run-away electrons in electrified plasmas. Office of Scientific and Technical Information (OSTI), 1992. http://dx.doi.org/10.2172/7276010.

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