Relevant bibliographies by topics / Electron backscattering

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Electron backscattering'

Author: Grafiati
Published: 4 June 2021
Last updated: 19 February 2022

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Journal articles on the topic "Electron backscattering"

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Afanas'ev, V. P., S. D. Fedorovich, A. V. Lubenchenko, A. A. Ryjov, and M. S. Esimov. "Kilovolt electron backscattering." Zeitschrift f�r Physik B Condensed Matter 96, no. 2 (June 1994): 253–59. http://dx.doi.org/10.1007/bf01313291.

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Roick, Christoph, Heiko Saul, Hartmut Abele, and Bastian Märkisch. "Undetected electron backscattering in Perkeo III." EPJ Web of Conferences 219 (2019): 04005. http://dx.doi.org/10.1051/epjconf/201921904005.

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The beta asymmetry in neutron beta decay is used to determine the ratio of axial-vector coupling to vector coupling most precisely. In electron spectroscopy, backscattering of electrons from detectors can be a major source of systematic error. We present the determination of the correction for undetected backscattering for electron detection with the instrument Perkeo III. For the electron asymmetry, undetected backscattering leads to a fractional correction of 5 × 10−4, i.e. a change by 40% of the total systematic uncertainty.
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Chen, Shi-Hao, and Ziwei Chen. "Electron–photon backscattering lasers." Laser Physics 24, no. 4 (March 7, 2014): 045805. http://dx.doi.org/10.1088/1054-660x/24/4/045805.

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Nakhodkin, N. G., and P. V. Melnik. "Elastic electron backscattering spectroscopy." Journal of Electron Spectroscopy and Related Phenomena 68 (May 1994): 623–39. http://dx.doi.org/10.1016/0368-2048(94)80025-1.

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Dudarev, S. L., J. Ahmed, P. B. Hirsch, and A. J. Wilkinson. "Decoherence in electron backscattering by kinked dislocations." Acta Crystallographica Section A Foundations of Crystallography 55, no. 2 (March 1, 1999): 234–45. http://dx.doi.org/10.1107/s0108767398014810.

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A model is proposed that explains the origin of the bright contrast of dislocation walls consisting of edge dislocation dipoles in electron channelling contrast images (ECCI) of fatigued crystals, when the incident beam is parallel to the edge dislocations. The model is based on the assumption that the contrast arises from the dislocation segments terminating the dipoles. These are modelled as screw-type kinks which scatter electrons. Scattering by randomly distributed kinks leads to the randomization of phase of transmitted and diffracted beams and suppresses the anomalous transmission of electrons. The predicted behaviour of electron-channeling contrast images agrees well with experimental observations.
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Klevenhagen, S. C. "Implication of electron backscattering for electron dosimetry." Physics in Medicine and Biology 36, no. 7 (July 1, 1991): 1013–18. http://dx.doi.org/10.1088/0031-9155/36/7/009.

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Jablonski, A., J. Gryko, J. Kraaer, and S. Tougaard. "Elastic electron backscattering from surfaces." Physical Review B 39, no. 1 (January 1, 1989): 61–71. http://dx.doi.org/10.1103/physrevb.39.61.

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Jablonski, Aleksander. "Elastic electron backscattering from gold." Physical Review B 43, no. 10 (April 1, 1991): 7546–54. http://dx.doi.org/10.1103/physrevb.43.7546.

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Dondero, Paolo, Alfonso Mantero, Vladimir Ivanchencko, Simone Lotti, Teresa Mineo, and Valentina Fioretti. "Electron backscattering simulation in Geant4." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 425 (June 2018): 18–25. http://dx.doi.org/10.1016/j.nimb.2018.03.037.

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Antolak, A. J., and W. Williamson. "Electron backscattering from bulk materials." Journal of Applied Physics 58, no. 1 (July 1985): 526–34. http://dx.doi.org/10.1063/1.335657.

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Dissertations / Theses on the topic "Electron backscattering"

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Kapraun, Dustin F. "Monte Carlo Techniques for Predicting Electron Backscattering." NCSU, 2001. http://www.lib.ncsu.edu/theses/available/etd-20011205-133453.

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KAPRAUN, DUSTIN FREDERICK. Monte Carlo Techniques for Predicting Electron Backscattering. (Under the direction of Dr. H.T. Tran.) The objective of this research is to develop and implement an algorithm that can accurately and efficiently predict backscatter yield and the trajectories and energies of electrons backscattered by solids. Taking into account the energy and direction of an incident electron, as well as the atomic number, atomic mass and density of the solid, our program determines a statistically reasonable path for the electron through the solid via Monte Carlo techniques. Such a model can and has been used in a variety of applications, but in this case we are interested in predicting the behavior of backscattered electrons. When applied to large numbers of electrons, the program provides statistically accurate results. In particular, excellent agreement is seen between the backscatter coefficients measured by Hunger and Kuchler and those predicted by our program. Furthermore, the angular distributions and energy distributions of backscattered electrons predicted by our program are consistent with those measured by Bishop.

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Marmitt, Gabriel Guterres. "Metal oxides of resistive memories investigated by electron and ion backscattering." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2017. http://hdl.handle.net/10183/170451.

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O memristor é um dos dispositivos mais promissores sendo estudados para múltiplos usos em sistemas eletrônicos, com aplicações desde memórias não voláteis a redes neurais artificiais. Seu funcionamento é baseado na formação e ruptura de filamentos condutores nanométricos, o que altera drasticamente a resistência do dispositivo. Estes filamentos são formados pela acumulação de vacâncias de oxigênio, portanto um profundo entendimento da autodifusão de oxigênio nestes sistemas é necessário. Medidas acuradas da difusão em óxidos metálicos foi obtida com o desenvolvimento de uma análise quantitativa do espectro em energia de elétrons retroespalhados. A inovadora técnica de RBS de elétrons (ERBS) utiliza elétrons de alta energia ( 40 keV) para investigar a região próxima a superfície (10–100 nm). Medidas da região de alta perda de energia – chamada de Spectroscopia de Perda de Alta-Energia de Elétrons Refletidos (RHEELS) – também exibe características da estrutura eletrônica dos materiais. Um procedimento cuidadoso para o ajuste de espectros de ERBS foi desenvolvido, e então aplicado na análise de amostras multi camada de Si3N4/TiO2, e medidas de band gap de alguns óxidos, como SiO2, CaCO3 e Li2CO3. Simulações de Monte Carlo foram empregadas no estudo dos efeitos de espalhamento múltiplo nos espectros de ERBS, e uma descrição dielétrica dos espalhamentos inelásticos extendeu as simulação para também considerarem os picos de exitação plasmônica observados em RHEELS. Estas ferramentas de análise foram integradas em um pacote chamado PowerInteraction. Com o uso deste, uma série de medidas de autodifusão de oxigênio em TiO2 foram conduzidas. As amostras eram compostas por dois filmes de TiO2 depositados por sputtering, um dos quais enriquecido com isótopo 18 de oxigênio. Após tratamentos térmicos, perfis de difusão foram obtidos pelo rastreio das concentrações relativas dos isótopos de oxigênio nos dois filmes. Do comportamento logarítmico dos coeficientes de difusão em relação à temperatura, uma energia de ativação de 1.05 eV para a autodifusão de oxigênio em TiO2 foi obtida. Análises por feixes de íons, como RBS e NRA/NRP (Análise/Perfilometria por Reação Nuclear), também forneceram informações complementares.
The memristor is one of the most promising devices being studied for multiple uses in future electronic systems, with applications ranging from nonvolatile memories to artificial neural networks. Its working is based on the forming and rupturing of nano-scaled conductive filaments, which drastically alters the device’s resistance. These filaments are formed by oxygen vacancy accumulation, hence a deep understanding of the self-diffusion of oxygen in these systems is necessary. Accurate measurements of oxygen self-diffusion on metal oxides was achieved with the development of a quantitative analysis of the energy spectrum of the backscattering of electrons. The novel technique called Electron Rutherford Backscattering Spectroscopy (ERBS) uses the scattering of high energy electrons ( 40 keV) to probe the sample’s near surface (10–100 nm). Measurements of the high energy loss region – called Reflection High-Energy Electron Loss Spectroscopy (RHEELS) – also exhibit characteristics of the material’s electronic structure. A careful procedure was developed for the fitting of ERBS spectra, which was then applied on the analysis of multi-layered samples of Si3N4/TiO2, and measurements of the band gap of common oxides, such as SiO2, CaCO3 and Li2CO3. Monte Carlo simulations were employed to study the effects of multiple elastic scatterings in ERBS spectra, and a dielectric function description of inelastic scatterings extended the simulation to also consider the plasmon excitation peaks observed in RHEELS. These analysis tools were integrated into a package named PowerInteraction. With its use, a series of measurements of oxygen self-diffusion in TiO2 were conducted. The samples were composed of two sputtered deposited TiO2 layers, one of which was enriched with the 18 mass oxygen isotope. After thermal annealing, diffusion profiles were obtained by tracking the relative concentration of oxygen isotopes in both films. From the logarithmic temperature dependence of the diffusion coefficients, an activation energy of 1.05 eV for oxygen self-diffusion in TiO2 was obtained. Common ion beam analysis, such as RBS and NRA/NRP (Nuclear Reaction Analysis/Profiling), were also used to provide complementary information.
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Lehan, John Philip. "Microstructural investigations of optical coatings by backscattering spectrometry, electron diffraction, and spectrophotometry." Diss., The University of Arizona, 1990. http://hdl.handle.net/10150/184997.

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Backscattering spectrometry with MeV ⁴He ion beams is investigated as a tool for determining composition with applications to optical coatings. Equations for the compositional analysis of thin films are reviewed. The effect of nuclear charge screening on compositional analysis by MeV ⁴He beams is discussed and examples involving the lanthanide trifluorides illustrate the importance of this correction to avoid possibly erroneous conclusions about sample composition. High probe beam energy is also briefly discussed as a method of reducing the overlap of peaks in backscattering spectra which reduces the technique's accuracy. Complications such as non-Rutherford scattering cross sections for light elements are addressed and an example given. The application of backscattering spectrometry to the depth profiling of elemental constituents in thin films is discussed. It is found that the backscattering spectrum itself provides a reasonable depth profile; however, its depth resolution is limited by the energy resolution of the detection system and energy straggling of the probe beam in the solid. In addition, the depth profile suffers from considerable noise. A method is derived using the principle of maximum likelihood which allows hypothetical depth profiles to be tested and the effects of energy straggling and detection system resolution to be separated from the depth profile. Several examples involving two hypothetical depth profile models are presented. Finally, backscattering spectrometry is combined with scanning electron microscopy, transmission electron microscopy, electron diffraction, x-ray photoelectron spectroscopy, and spectrophotometry in a microstructural survey of hafnium dioxide optical coatings deposited by electron beam evaporation and ion-assisted deposition (IAD). It is found that hafnium dioxide films deposited at temperatures below 300°C are amorphous and exhibit a negative optical inhomogeneity. The refractive index as well as the inhomogeneity are strongly influenced by the oxygen present during film deposition. The inhomogeneity can be removed by IAD which also increases the refractive index of the film. In addition, low energy IAD is found to increase the refractive of the films without affecting the inhomogeneity. This is explained by the preferential sputtering of hydroxide from the growing film surface by the bombarding ions.
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Thiagarajan, Kannan. "Tight-binding calculations of electron scattering rates in semiconducting zigzag carbon nanotubes." Licentiate thesis, Mittuniversitetet, Institutionen för informationsteknologi och medier, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-13162.

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The technological interest in a material depends very much on its electrical, magnetic, optical and/or mechanical properties. In carbon nanotubes the atoms form a cylindrical structure with a diameter of the order 1 nm, but the nanotubes can be up to several hundred micrometers in length. This makes carbon nanotubes a remarkable model for one-dimensional systems. A lot of efforts have been dedicated to manufacturing carbon nanotubes, which is expected to be the material for the next generation of devices. Despite all the attention that carbon nanotubes have received from the scientific community, only rather limited progress has been made in the theoretical understanding of their physical properties. In this work, we attempt to provide an understanding of the electron-phonon and electron-defect interactions in semiconducting zigzag carbon nanotubes using a tight-binding approach. The electronic energy dispersion relations are calculated by applying the zone-folding technique to the dispersion relations of graphene. A fourth-nearest-neighbour force constant model has been applied to study the vibrational modes in the carbon nanotubes. Both the electron-phonon interaction and the electron-defect interaction are formulated within the tight-binding approximation, and analyzed in terms of their quantum mechanical scattering rates. Apart from the scattering rates, their components in terms of phonon absorption, phonon emission, backscattering and forward scattering have been determined and analyzed. The scattering rates for (5,0), (7,0), (10,0), (13,0) and (25,0) carbon nanotubes at room temperature and at 10K are presented and discussed. The phonon scattering rate is dependent on the lattice temperature in the interval 0-0.17 eV. We find that backscattering and phonon emission are dominant over forward scattering and phonon absorption in most of the energy interval. However, forward scattering and phonon absorption can be comparable to backscattering and phonon emission in limited energy intervals. The phonon modes associated with each peak in the electron-phonon scattering rates have been identified, and the similarities in the phonon scattering rates between different nanotubes are discussed. The dependence of the defect scattering rate on the tube diameter is similar to that of the phonon scattering rate. Both the phonon and the defect scattering rates show strong dependence on the tube diameter (i.e., the scattering rate decreases as a function of the index of the nanotube). It is observed that the backscattering and forward scattering for electrons interacting with defects occur with same frequency at all energies, in sharp contrast to the situation for phonon scattering. It is demonstrated that the differences in the scattering rate between different tubes are mainly due to the differences in their band structures.
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LOW, MARJORIE. "Estudo do desenvolvimento da textura durante a recristalização primária de aços ferríticos por difração de raios X e difração de elétrons retroespalhados." reponame:Repositório Institucional do IPEN, 2006. http://repositorio.ipen.br:8080/xmlui/handle/123456789/11449.

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Tese (Doutoramento)
IPEN/T
Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP
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SERNA, MARILENE M. "Estudo comparativo da analise de macrotextura pelas tecnicas de difracao de raios X e difracao de eletrons retroespalhados." reponame:Repositório Institucional do IPEN, 2002. http://repositorio.ipen.br:8080/xmlui/handle/123456789/11013.

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Dissertacao (Mestrado)
IPEN/D
Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP
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Annan, Kofi Ahomkah. "Effect of hot working characteristics on the texture development in AISI 430 and 433 ferritic stainless steel." Diss., University of Pretoria, 2012. http://hdl.handle.net/2263/25436.

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The last seven hot rolling passes of the ferritic stainless steels (FSS) AISI 430 and AISI 433 (the latter an Al-added variant of 430) were simulated on Gleeble-1500D® and Gleeble-3800TM® thermo-mechanical simulators to investigate the effect of temperature, strain rate and inter-pass time on the development of texture in these steel grades and its subsequent influence on ridging. The compression tests were carried out over a wide range of strain rates (0.1 s-1 to 5 s-1, 25 s-1 and 50 s-1) and temperatures (1100 to 820 oC) with different inter-pass times (2 s, 10 s, 20 s and 30 s). The transition temperature from dynamic recrystallization (which may introduce a texture change) to dynamic recovery (in which no texture changes are expected) was determined by examining the relationship between the mean flow stress and the deformation temperature in multi-pass tests. Both macrotexture (XRD) and microtexture (EBSD) analyses were employed to characterise and study the texture present in these steels. It was found that the texture in the central layer of the compressed sample is a strong recrystallization-type. The through-thickness textural and microstructural banding was found to be responsible for ridging in these grades of stainless steels. Dynamic recrystallization which promotes the formation of the desired ã-fibre texture leading to high ductility, formability and eventually reduction or elimination of ridging, was found to occur in both AISI 430 and AISI 433 at high temperatures, low strain rates and longer inter-pass times with multi-pass testing. Generally AISI 433 has a stronger gamma texture developed than the AISI 430 when hot rolled under similar conditions, which leads to improved ductility and less ridging in AISI 433 than AISI 430.
Dissertation (MSc)--University of Pretoria, 2012.
Materials Science and Metallurgical Engineering
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Nxusani, Ezo. "Synthesis and analysis of Novel Platinum group Metal Chalcogenide Metal Quantum Dot and Electrochemical Markers." University of the Western Cape, 2018. http://hdl.handle.net/11394/6424.

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Magister Scientiae - MSc (Chemistry)
Although cadmium and lead chalcogenide quantum dot have excellent optical and photoluminescent properties that are highly favorable for biological applications, there still exists increasing concerns due to the toxicity of these metals. We, therefore, report the synthesis of new aqueous soluble IrSe quantum dot at room temperature utilizing a bottom-up wet chemistry approach. NaHSe and H2IrCl6 were utilized as the Se and Ir source, respectively. High-resolution transmission electron microscopy reveals that the synthesized 3MPA-IrSe Qd are 3 nm in diameter. The characteristics and properties of the IrSe Qd are investigated utilizing, Selected Area electron diffraction, ATR- Fourier Transform Infra-Red Spectroscopy, Energy Dispersive X-ray spectroscopy, Photoluminescence, Cyclic Voltammetry and chronocoulometry. A 3 fold increase in the optical band gap of IrSe quantum dot in comparison to reported bulk IrSe is observed consistent with the effective mass approximation theory for semiconductor materials of particles sizes < 10 nm. The PL emission of the IrSe quantum dot is at 519 nm. Their electro-activity is studied on gold electrodes and exhibit reduction and oxidation at - 107 mV and +641 mV, with lowered reductive potentials. The synthesized quantum dot are suitable for low energy requiring electrochemical applications such as biological sensors and candidates for further investigation as photoluminescent biological labels.
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Magogodi, Steven Mothibakgomo. "Hydrogen storage capacity of the Ti-Pd multilayer systems." University of the Western Cape, 2020. http://hdl.handle.net/11394/7711.

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>Magister Scientiae - MSc
Hydrogen has high energy density and it is regarded as the future energy carrier. Hydrogen can be stored as a gas in high-pressure cylinders, as a liquid in cryogenic tanks and as a solid in metal hydrides. The storage of hydrogen in gas and liquid form has many limitations. Light metal hydrides show high energy density and are a promising and more practical mode of hydrogen storage. In particular, titanium and its alloys are promising metal hydrides for hydrogen storage due to their high affinity to hydrogen. The aim of this study is to investigate the effect of thermal annealing on hydrogen storage capacity of Ti-Pd multilayer systems. Ti-Pd multilayer films were prepared on CP-Ti (commercial pure Ti) and Ti6Al4V substrates using an electron beam evaporator equipped with a thickness monitor. The sequential deposition of layers Pd(50nm)/Ti(25nm)/Pd(50nm) was done at a constant deposition rate of 0.6 Å/s. The first batch of samples were thermally annealed at 550 °C in vacuum for two hours, the second batch of samples were annealed at 550 oC under H2(15%)/Ar(85%) gas mixture for two hours and the third series of samples was annealed under pure H2 gas at 550 oC for one hour. SEM showed relatively homogeneous and smooth topography of surfaces in as-deposited samples, while a rough textured surface was observed in both samples annealed under vacuum and under H2/Ar gas mixture. The samples annealed under pure H2 gas did not show any sign of crystallites grow but instead a relatively smooth surface with sign of etching. XRD revealed structural transformation as evidenced by the presence of PdTi2 phase in samples annealed under vacuum; in samples annealed under the gas mixture Pd2Ti was noted in addition to TiH2 and TiO2. While the TiH2 phase is an indication of hydrogen absorption, the TiPd2 phase suggests intermixing of the deposited layers and the presence of TiO2 is evidence of oxidation. The samples annealed under pure H2 gas showed only TiH2 with no trace of structural transformation. RBS confirmed the intermixing of layers in the samples annealed under vacuum and H2(15%)/Ar(85%) gas mixture, while samples annealed under pure H2 gas did not show any intermixing of layers. ERDA revealed an average H content of ~ 3.5 at.% in CP-Ti and ~6.2 at.% in Ti6Al4V for samples annealed under H2(15%)/Ar(85%) gas mixture. We recorded an hydrogen content of ~19.5 at.% in CP-Ti annealed under pure H2 while ~25.5 at.% was found in Ti6Al4V annealed under the same conditions. When the thickness of the Pd catalyst layers was increased to 100 nm (i.e. Pd (100 nm)/Ti (25 nm)/Pd (100 nm)), only ~ 12.5 at.% and 11.2 at. % hydrogen content was recorded in samples prepared on CP-Ti and Ti6Al4V alloy respectively, both annealed under pure hydrogen for one hour as above.
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Liebig, Andreas. "Amorphous, Nanocrystalline, Single Crystalline: Morphology of Magnetic Thin Films and Multilayers." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis Acta Universitatis Upsaliensis, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-8355.

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Books on the topic "Electron backscattering"

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Dingley, D. J. Atlas of backscattering Kikuchi diffraction patterns. Bristol, Eng: Institute of Physics Pub., 1995.

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J, Bozak M., Williams J. R, and United States. National Aeronautics and Space Administration., eds. X-ray photoelectron spectroscopy (XPS), Rutherford back scattering (RBS) studies ...: Final report for NAS8-39131 delivery order 7. [Washington, DC: National Aeronautics and Space Administration, 1993.

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J, Bozak M., Williams J. R, and United States. National Aeronautics and Space Administration., eds. X-ray photoelectron spectroscopy (XPS), Rutherford back scattering (RBS) studies ...: Final report for NAS8-39131 delivery order 7. [Washington, DC: National Aeronautics and Space Administration, 1993.

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J, Bozak M., Williams J. R, and United States. National Aeronautics and Space Administration., eds. X-ray photoelectron spectroscopy (XPS), Rutherford back scattering (RBS) studies ...: Final report for NAS8-39131 delivery order 7. [Washington, DC: National Aeronautics and Space Administration, 1993.

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Beenakker, Carlo W. J. Classical and quantum optics. Edited by Gernot Akemann, Jinho Baik, and Philippe Di Francesco. Oxford University Press, 2018. http://dx.doi.org/10.1093/oxfordhb/9780198744191.013.36.

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This article focuses on applications of random matrix theory (RMT) to both classical optics and quantum optics, with emphasis on optical systems such as disordered wave guides and chaotic resonators. The discussion centres on topics that do not have an immediate analogue in electronics, either because they cannot readily be measured in the solid state or because they involve aspects (such as absorption, amplification, or bosonic statistics) that do not apply to electrons. The article first considers applications of RMT to classical optics, including optical speckle and coherent backscattering, reflection from an absorbing random medium, long-range wave function correlations in an open resonator, and direct detection of open transmission channels. It then discusses applications to quantum optics, namely: the statistics of grey-body radiation, lasing in a chaotic cavity, and the effect of absorption on the reflection eigenvalue statistics in a multimode wave guide.
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Book chapters on the topic "Electron backscattering"

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Kiefer, Daniel. "Coherent Thomson Backscattering from Relativistic Electron Mirrors." In Springer Theses, 79–97. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-07752-9_5.

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Jablonski, A. "The Role of Electron Backscattering in AES." In Springer Series in Surface Sciences, 186–97. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-75066-3_23.

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Lee, Jeong Han. "Electron beam line design of A4 Compton backscattering polarimeter." In From Parity Violation to Hadronic Structure and more, 133. Berlin, Heidelberg: Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/3-540-26345-4_32.

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Klein, Peter, Michael Andrae, Kurt Röhrbacher, and Johann Wernisch. "Calculation of the Surface Ionisation Using Analytical Models of Electron Backscattering." In Microbeam and Nanobeam Analysis, 363–76. Vienna: Springer Vienna, 1996. http://dx.doi.org/10.1007/978-3-7091-6555-3_29.

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Dimov, Ivan T., Emanouil I. Atanassov, and Mariya K. Durchova. "An Improved Monte Carlo Algorithm for Elastic Electron Backscattering from Surfaces." In Large-Scale Scientific Computing, 141–48. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/3-540-45346-6_13.

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Sasaki, Yasushi, Manabu Iguchi, and Mitsutaka Hino. "Measuring Strains for Hematite Phase in Sinter Ore by Electron Backscattering Diffraction Method." In Experimental Mechanics in Nano and Biotechnology, 237–40. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-415-4.237.

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Dapor, Maurizio. "Backscattering Coefficient." In Transport of Energetic Electrons in Solids, 93–109. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-43264-5_8.

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Dapor, Maurizio. "Backscattering Coefficient." In Transport of Energetic Electrons in Solids, 65–79. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03883-4_6.

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Dapor, Maurizio. "Backscattering Coefficient." In Transport of Energetic Electrons in Solids, 69–83. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-47492-2_6.

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Kötz, R. "Rutherford Backscattering Spectroscopy of Electrode Surfaces." In Spectroscopic and Diffraction Techniques in Interfacial Electrochemistry, 439–48. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-011-3782-9_15.

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Conference papers on the topic "Electron backscattering"

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Tanabe, Hiroyoshi, Tsukasa Abe, Yuichi Inazuki, and Naoya Hayashi. "Short-range electron backscattering from EUV masks." In Photomask and NGL Mask Technology XVII, edited by Kunihiro Hosono. SPIE, 2010. http://dx.doi.org/10.1117/12.862641.

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Guo, X. Q., E. W. Bell, J. S. Thompson, G. H. Dunn, M. E. Bannister, R. A. Phaneuf, and A. C. H. Smith. "Backscattering in electron-impact excitation of multiply charged ions." In 6th International conference on the physics of highly charged ions. AIP, 1993. http://dx.doi.org/10.1063/1.43699.

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Passchier, I., D. W. Higinbotham, N. Vodinas, N. Papadakis, C. W. de Jager, R. Alarcon, T. Bauer, et al. "A Compton backscattering polarimeter for measuring longitudinal electron polarization." In The seventh international workshop on polarized gas targets and polarized beams. AIP, 1998. http://dx.doi.org/10.1063/1.55003.

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Massoumi, G. R., W. N. Lennard, Peter J. Schultz, A. B. Walker, and Kjeld O. Jensen. "Experimental and Monte-Carlo studies of electron and positron backscattering." In The fifth international workshop on slow positron beam techniques for solids and surfaces. AIP, 1994. http://dx.doi.org/10.1063/1.45540.

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Kvon, Ze D., E. A. Galaktionov, V. A. Sablikov, A. K. Savchenko, D. V. Scheglov, and A. V. Latyshev. "Single-Electron Backscattering Resonances In a Small Quantum Ring Interferometer." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730081.

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Yakusheva, Oksana Y., Andrey N. Pavlov, and Eugene V. Sypin. "Experimental research backscattering in the disperse system." In 2013 International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM). IEEE, 2013. http://dx.doi.org/10.1109/edm.2013.6641986.

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Yakusheva, Oksana Y., Sergey A. Lisakov, Artem V. Kuraev, and Eugene V. Sypin. "Research backscattering in the disperse system." In 2012 IEEE 13th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2012). IEEE, 2012. http://dx.doi.org/10.1109/edm.2012.6310236.

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Milazzo, R. G., A. M. Mio, G. D'Arrigo, C. Spinella, M. G. Grimaldi, and E. Rimini. "Electroless deposition of gold investigated with rutherford backscattering and electron microscopy." In 2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC). IEEE, 2014. http://dx.doi.org/10.1109/nmdc.2014.6997416.

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IMAI, Y. "THE COMPTON BACKSCATTERING POLARIMETER OF THE A4 EXPERIMENT." In Proceedings of the 16th International Spin Physics Symposium and Workshop on Polarized Electron Sources and Polarimeters. WORLD SCIENTIFIC, 2005. http://dx.doi.org/10.1142/9789812701909_0186.

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Lechner, Anton, Maria Grazia Pia, and Manju Sudhakar. "Validation of Geant4 low energy physics models against electron energy deposition and backscattering data." In 2007 IEEE Nuclear Science Symposium Conference Record. IEEE, 2007. http://dx.doi.org/10.1109/nssmic.2007.4436546.

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Reports on the topic "Electron backscattering"

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Powell, Cedric J., and Aleksander Jablonski. NIST Backscattering-Correction-Factor Database for Auger Electron Spectroscopy, Version 1.1 of SRD 154. National Institute of Standards and Technology, July 2015. http://dx.doi.org/10.6028/nist.nsrds.154.

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Kung, H., S. Fayeulle, M. Nastasi, and Y. C. Lu. Characterization of TiN/B-C-N multilayers by transmission electron microscopy, ion beam backscattering, and low angle x-ray diffraction. Office of Scientific and Technical Information (OSTI), October 1997. http://dx.doi.org/10.2172/541866.

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