Relevant bibliographies by topics / Electron Beam Induced Etching (EBIE)

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  1. Journal articles
  2. Dissertations / Theses
  3. Conference papers

Academic literature on the topic 'Electron Beam Induced Etching (EBIE)'

Author: Grafiati
Published: 17 May 2025
Last updated: 31 July 2025

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Journal articles on the topic "Electron Beam Induced Etching (EBIE)"

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Lin, Kang-Yi, Christian Preischl, Christian Felix Hermanns, et al. "SiO2 etching and surface evolution using combined exposure to CF4/O2 remote plasma and electron beam." Journal of Vacuum Science & Technology A 40, no. 6 (2022): 063004. http://dx.doi.org/10.1116/6.0002038.

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Electron-based surface activation of surfaces functionalized by remote plasma appears like a flexible and novel approach to atomic scale etching and deposition. Relative to plasma-based dry etching that uses ion bombardment of a substrate to achieve controlled material removal, electron beam-induced etching (EBIE) is expected to reduce surface damage, including atom displacement, surface roughness, and undesired material removal. One of the issues with EBIE is the limited number of chemical precursors that can be used to functionalize material surfaces. In this work, we demonstrate a new confi
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Lin, Kang-Yi, Christian Preischl, Christian Felix Hermanns, et al. "Electron beam-induced etching of SiO2, Si3N4, and poly-Si assisted by CF4/O2 remote plasma." Journal of Vacuum Science & Technology A 41, no. 1 (2023): 013004. http://dx.doi.org/10.1116/6.0002234.

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Electron-stimulated etching of surfaces functionalized by remote plasma is a flexible and novel approach for material removal. In comparison with plasma dry etching, which uses the ion-neutral synergistic effect to control material etching, electron beam-induced etching (EBIE) uses an electron-neutral synergistic effect. This approach appears promising for the reduction of plasma-induced damage (PID), including atomic displacement and lateral straggling, along with the potential for greater control and lateral resolution. One challenge for EBIE is the limited selection of chemical precursor mo
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Hatayama, Tomoaki, S. Takenami, Hiroshi Yano, Yukiharu Uraoka, and Takashi Fuyuki. "Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System." Materials Science Forum 556-557 (September 2007): 283–86. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.283.

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By the use of Cl2-O2 thermal etching method, the etching rates of 4H-SiC were reached to about 1μm/h for Si and 40μm/h for C face at 950oC. Etch pits only appeared over 0.25-μm-etched depth on the 4H-SiC (0001) Si face. The shapes and density of etch pits are similar tendencies in the case of molten KOH etched surface. To study the relationship between thermally etched surface features and crystal defects, the planar mapping electron-beam-induced current (EBIC) technique was carried out. Almost dark areas in the EBIC image correspond to the etch pits. From the EBIC image, a shell-like pit form
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Preischl, Christian, Linh Hoang Le, Elif Bilgilisoy, Armin Gölzhäuser, and Hubertus Marbach. "Exploring the fabrication and transfer mechanism of metallic nanostructures on carbon nanomembranes via focused electron beam induced processing." Beilstein Journal of Nanotechnology 12 (April 7, 2021): 319–29. http://dx.doi.org/10.3762/bjnano.12.26.

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Focused electron beam-induced processing is a versatile method for the fabrication of metallic nanostructures with arbitrary shape, in particular, on top of two-dimensional (2D) organic materials, such as self-assembled monolayers (SAMs). Two methods, namely electron beam-induced deposition (EBID) and electron beam-induced surface activation (EBISA) are studied with the precursors Fe(CO)5 and Co(CO)3NO on SAMs of 1,1′,4′,1′′-terphenyl-4-thiol (TPT). For Co(CO)3NO only EBID leads to deposits consisting of cobalt oxide. In the case of Fe(CO)5 EBID and EBISA yield deposits consisting of iron nano
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Lu, Jinggang, George A. Rozgonyi, James Rand, and Ralf Jonczyk. "EBIC Study of Electrical Activity of Stacking Faults in Multicrystalline Sheet Silicon." Solid State Phenomena 108-109 (December 2005): 627–30. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.627.

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The electrical activity of stacking faults (SFs) in multicrystalline sheet silicon has been examined by correlating EBIC(electron beam induced current), preferential defect etching, and microwave photo-conductance decay (PCD) lifetime measurements. Following a three hour 1060 0C annealing the interstitial oxygen concentration decreased from 14 to 4.5 x 1017 cm-3, during which time a high density of SFs were generated in the center of individual large grains. Subsequent EBIC contrast variation within individual large grains was correlated with the local SF density revealed by preferential etchi
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Yao, Yong Zhao, Yoshihiro Sugawara, Yukari Ishikawa, et al. "Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na2O2 Etching." Materials Science Forum 679-680 (March 2011): 294–97. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.294.

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Dislocations in highly doped n-type 4H-SiC (n+-SiC, n>1019 cm-3) substrate have been studied by means of electron beam induced current (EBIC). Ni/n-SiC/n+-SiC/Al structure was fabricated in order to simultaneously observe the dislocations in n-SiC epilayer and n+-SiC substrate. We have found that dark dots in the EBIC image correspond to threading screw dislocations (TSDs) and threading edge dislocations (TEDs) with the former being relatively darker. Short dark lines along off-cut are attributed to basal plane dislocations (BPDs) in the epilayer; and the randomly oriented long dark lines a
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Zhang, Ze Hong, Ying Gao, Arul Arjunan, et al. "CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates." Materials Science Forum 483-485 (May 2005): 113–16. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.113.

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Thick epilayers up to 60 µm have been grown on ) 0 2 11 ( face SiC substrates at a growth rate of 15 µm/hr by chemical vapor deposition (CVD). The epilayer surface is extremely smooth with a RMS roughness of 0.6 nm for a 20µm×20µm area. Threading screw and edge dislocations parallel to the c-axis are present in the ) 0 2 11 ( substrate; however, they do not propagate into the epilayer. The I-V characteristics of the Schottky diodes on this face were studied. Basal plane (0001) dislocations with a density of ~105 cm-2 were found in the ) 0 2 11 ( epilayers by molten KOH etching and electron bea
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Martín, P., J. Jiménez, C. Frigeri, L. F. Sanz, and J. L. Weyher. "A study of the dislocations in Si-doped GaAs comparing diluted Sirtl light etching, electron-beam-induced current, and micro-Raman techniques." Journal of Materials Research 14, no. 5 (1999): 1732–43. http://dx.doi.org/10.1557/jmr.1999.0235.

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Impurity atmospheres around dislocations have been studied in n-type Si-doped liquid encapsulated Czochralski (LEC) GaAs substrates by micro-Raman spectroscopy, diluted Sirtl-like etching with light (DSL) method, and electron-beam-induced current (EBIC). A complete morphological study of the recombinative atmospheres revealed by photoetching was achieved by phase stepping microscopy (PSM), which is an optical interferometry technique allowing to obtain the surface topography with a high vertical resolution (in the nanometer range). The minority carrier diffusion length was measured by EBIC at
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Rykaczewski, Konrad, Owen J. Hildreth, Dhaval Kulkarni, et al. "Maskless and Resist-Free Rapid Prototyping of Three-Dimensional Structures Through Electron Beam Induced Deposition (EBID) of Carbon in Combination with Metal-Assisted Chemical Etching (MaCE) of Silicon." ACS Applied Materials & Interfaces 2, no. 4 (2010): 969–73. http://dx.doi.org/10.1021/am1000773.

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Banik, Avishek, and Justin Sambur. "Intra-Particle Materials Heterogeneity and Impact of Surface Structure on Spatial Charge Separation in a Single BiVO4 Particle for Photoelectrochemical Water-Splitting." ECS Meeting Abstracts MA2025-01, no. 39 (2025): 2056. https://doi.org/10.1149/ma2025-01392056mtgabs.

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Achieving spatial charge separation between different facets on a single crystal remained a key approach in improving efficacy of semiconductor-based photocatalysts.1 BiVO4 is a model water oxidation material in water splitting. It is believed that in case of a highly faceted anisotropic BiVO4 particle, photogenerated charges are spatially separated to different exposed facets (holes to {110} and electrons to {010} facets) due to energy level offsets between the different crystal facets.1 However, the effect of exposed facets in spatial separation of charges is illusive. Specifically, it is un
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Dissertations / Theses on the topic "Electron Beam Induced Etching (EBIE)"

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Tran, Duc-Duy. "Techniques avancées de gravure pour les composants électroniques et optiques en diamant." Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT115.

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Le diamant suscite depuis quelques années une attention considérable en tant que matériau de choix pour les dispositifs électroniques et optiques avancés. Cependant, pour exploiter pleinement son potentiel, il est essentiel de surmonter des défis majeurs dans les processus de gravure. En effet, si les liaisons carbone-carbone très fortes du diamant lui confèrent des propriétés très intéressantes, elles rendent les procédés de gravure inefficaces ou mal adaptés. Les méthodes de gravure classiques sont inadaptées car elles causent trop de dommages de surface et de subsurface, ce qui affecte les
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Šamořil, Tomáš. "Aplikace fokusovaného iontového a elektronového svazku v nanotechnologiích." Doctoral thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2016. http://www.nusl.cz/ntk/nusl-234610.

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Nowadays, the systems that allow simultaneous employment of both focused electron and ion beams are very important tools in the field of micro- and nanotechnology. In addition to imaging and analysis, they can be used for lithography, which is applied for preparation of structures with required shapes and dimensions at the micrometer and nanometer scale. The first part of the thesis deals with one lithographic method – focused electron or ion beam induced deposition, for which a suitable adjustment of exposition parameters is searched and quality of deposited metal structures in terms of shape
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Nunez, Eroles Marc. "Nanogravure et caractérisation structurale et électronique de rubans de graphène cristallins." Thesis, Toulouse 3, 2015. http://www.theses.fr/2015TOU30201/document.

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Les principaux objectifs de cette thèse sont la fabrication et la caractérisation structurale à haute résolution de nanorubans de graphène à bords atomiquement lisses ainsi que leur intégration dans des composants et l'étude du transport électronique. En premier lieu, nous montrons que des nanorubans de graphène cristallins de largeur inférieure à 100 nm et avec des qualités structurales supérieures l'état de l'art peuvent être découpé par un faisceau électronique focalisé d'énergie modérée en présence d'oxygène. Les caractéristiques des rubans obtenus sont également supérieures à l'approche p
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Lassiter, Matthew Gordon. "Electron Beam Induced Etching." 2009. http://trace.tennessee.edu/utk_graddiss/59.

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The mechanisms of electron beam induced etching have been studied both experimentally and theoretically. Specifically, a steady-state and a time-dependent continuum model of the process have been developed which uniquely includes the effect of the etch product desorption and diffusion. Both analytical and numerical methods were employed for the modeling, and various experimental designs were used for validation. Initially, a steady-state model was developed to understand an observed so-called “moat” profile which could adequately be described by a finite etch product surface residence time. Su
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Randolph, Steven Jeffrey. "Nanoscale materials processing electron beam-induced etching of silicon and silicon dioxide /." 2004. http://etd.utk.edu/2004/RandolphSteven.pdf.

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Thesis (M.S.)--University of Tennessee, Knoxville, 2004.<br>Title from title page screen (viewed Jan. 12, 2005). Thesis advisor: Philip D. Rack. Document formatted into pages (viii, 104 p. : ill. (some col.)). Vita. Includes bibliographical references (p. 88-91).
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Conference papers on the topic "Electron Beam Induced Etching (EBIE)"

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Sarnecki, Lori L., and Regina Kuan. "P-N Junction Analysis using Electron Beam Induced Current (EBIC) Technique." In ISTFA 2021. ASM International, 2021. http://dx.doi.org/10.31399/asm.cp.istfa2021p0352.

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Abstract This paper describes how electron beam induced current (EBIC) analysis is used to determine the doping profile of p-n junctions and identify defective devices. The limitations of both chemical etching and EBIC are discussed as is the use of ion milling as a potential method for enhancing resolution. The findings in this paper add to the understanding of EBIC and provide insights to further improvements in its use in failure analysis.
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Yoshida, Eiji, Tomohiro Tanaka, Taro Oyamada, Tohru Koyama, Junko Komori, and Shigeto Maegawa. "3-D EBIC Technique using FIB and EB Double Beam System." In ISTFA 2005. ASM International, 2005. http://dx.doi.org/10.31399/asm.cp.istfa2005p0163.

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Abstract We propose visualizing techniques of a diffusion layer using an electron beam induced current (EBIC) for a site-specific cross-section formed by focused ion beam (FIB) treatment. Moreover, we present a three-dimensional (3-D) EBIC technique using a double beam (FIB &amp; EB) system to understand the diffusion structure. This 3-D application of the EBIC technique is very useful for delineating PN junctions and pointing out implant defects in ULSI devices. Furthermore, we applied the EBIC technique to backside circuit editing with FIB. The end-point of the silicon trench etching can be
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Scales, Z. F., C. Koller, S. Schoemann, et al. "Identifying Electrically Active Dislocations in GaN and the Challenge of Cross-Correlative Physical Characterization." In ISTFA 2023. ASM International, 2023. http://dx.doi.org/10.31399/asm.cp.istfa2023p0469.

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Abstract Threading dislocations are a feature of all current GaN-based power devices and are speculated to impact their performance and reliability. The aim of this study is to cross-correlate electrical and physical characterization of dislocations using electron beam induced current (EBIC), electron channeling contrast imaging (ECCI), and transmission electron microscopy (TEM) analysis techniques. Sample preparation steps such as deposition and etching of markers via focused electron beam (FEB) and focused ion beam (FIB) turned out to be decisive for successful characterization. We describe
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Miyazoe, H., I. Utke, J. Michler, and K. Terashima. "Focused electron beam induced etching and in-situ monitoring: Fabrication of sub-beam sized nanoholes." In 2007 Digest of papers Microprocesses and Nanotechnology. IEEE, 2007. http://dx.doi.org/10.1109/imnc.2007.4456200.

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Paulsen-Boaz, Carlotta, and Thor Rhodin. "Pulsed UV Induced Etching of Silicon: A Time-of-Flight Study." In The Microphysics of Surfaces: Beam-Induced Processes. Optica Publishing Group, 1991. http://dx.doi.org/10.1364/msbip.1991.tua4.

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Understanding the dynamics of the laser-induced chlorine etching of silicon requires clarification of the mechanisms by which the photons interact more or less concurrently with the reacting gas, the surface adsorbate and the silicon substrate. To clarify the etching mechanism it is generally recognized that it is desirable to separate the relative contributions from: excitation and dissociation of the reacting gas, Maxwell-Boltzmann heating of the substrate, formation of an altered surface, dissociation, formation and desorption of surface products, generation of electron-hole pairs id the su
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KATAYAMA, Yoshifumi, Tomonori ISHIKAWA, Nobuyuki TANAKA, et al. "Electron-Beam Induced Etching as a Key Process in Through-Vacuum Fabrication of GaAs-AlGaAs Nanoheterostructures." In 1994 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1994. http://dx.doi.org/10.7567/ssdm.1994.s-i-8-1.

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Sanche., Léon. "Interaction of Low-Energy Electrons With Adsorbed Molecules: Mechanisms of Energy Transfer and Dissociation." In The Microphysics of Surfaces: Beam-Induced Processes. Optica Publishing Group, 1991. http://dx.doi.org/10.1364/msbip.1991.mc2.

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The chemical reactivity of molecules physisorbed or chemisorbed on solid surfaces is a topic of interest in many areas of applied physics and chemistry. A large portion of the activity in this field of research has been focused on the catalytic action of surfaces; however, the recent discoveries on the possibility to enhance, trigger and even control chemical reactions with photon and particle beams incident on surfaces are now starting to shift scientific interests toward studies of the dynamics involved in these non-thermal reactions. Particularly, photon and electron beam methods are expect
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Ray, Valery, Nicholas Antoniou, Alex Krechmer, and Andrew Saxonis. "Improvements of Secondary Electron Imaging and Endpoint Detection in Focused Ion Beam Circuit Modification." In ISTFA 2003. ASM International, 2003. http://dx.doi.org/10.31399/asm.cp.istfa2003p0338.

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Abstract Secondary electron signal is widely used in Focused Ion Beam (FIB) systems for imaging and endpointing. In the application of integrated circuit modification, technology has progressed towards smaller dimensions and higher aspect ratios. Therefore, FIB based circuit modification processes require the use of primary ion beam currents below 10 pA and Gas Assisted Etching (GAE). At low beam currents, short pixel dwell times and high aspect ratios, the level of available secondary electrons for detection has declined significantly. FIB GAE and deposition requires delivery and release of a
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Zhou, Jack, and Guoliang Yang. "Modeling and Simulation of Focused Ion Beam Based Single Digital Nano Hole Fabrication for DNA and Macromolecule Characterization." In ASME 2008 International Manufacturing Science and Engineering Conference collocated with the 3rd JSME/ASME International Conference on Materials and Processing. ASMEDC, 2008. http://dx.doi.org/10.1115/msec_icmp2008-72033.

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In this paper we describe a top down nano-fabrication method to make single-digit nanoholes that we aim to use for DNA and RNA characterization. There are three major steps towards the fabrication of a single-digit nanohole. 1) Preparing the freestanding thin film by epitaxial deposition and electrochemical etching. 2) Making sub-micro holes (0.2 μm to 0.02μm) by focused ion beam (FIB), electron beam (EB), atomic force microscope (AFM), or other methods. 3) Reducing the hole to less than 10 nm by epitaxial deposition, FIB or EB induced deposition. One specific aim for this paper is to model, s
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Jarausch, Konrad, John F. Richards, Lloyd Denney, Alex Guichard, and Phillip E. Russell. "Site Specific 2-D Implant Profiling Using FIB Assisted SCM." In ISTFA 2002. ASM International, 2002. http://dx.doi.org/10.31399/asm.cp.istfa2002p0467.

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Abstract Advances in semiconductor technology are driving the need for new metrology and failure analysis techniques. Failures due to missing, or misregistered implants are particularly difficult to resolve. Two-dimensional implant profiling techniques such as scanning capacitance microscopy (SCM) rely on polish preparation, which makes reliably targeting sub 0.25 um structures nearly impossible.[1] Focused ion beam (FIB) machining is routinely used to prepare site-specific cross-sections for electron microscopy inspection; however, FIB induced artifacts such as surface amorphization and Ga io
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