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Journal articles on the topic 'Electron Beam Induced Etching (EBIE)'

Author: Grafiati

Published: 17 May 2025

Last updated: 31 July 2025

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1

Lin, Kang-Yi, Christian Preischl, Christian Felix Hermanns, et al. "SiO₂ etching and surface evolution using combined exposure to CF₄/O₂ remote plasma and electron beam." Journal of Vacuum Science & Technology A 40, no. 6 (2022): 063004. http://dx.doi.org/10.1116/6.0002038.

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Electron-based surface activation of surfaces functionalized by remote plasma appears like a flexible and novel approach to atomic scale etching and deposition. Relative to plasma-based dry etching that uses ion bombardment of a substrate to achieve controlled material removal, electron beam-induced etching (EBIE) is expected to reduce surface damage, including atom displacement, surface roughness, and undesired material removal. One of the issues with EBIE is the limited number of chemical precursors that can be used to functionalize material surfaces. In this work, we demonstrate a new confi

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2

Lin, Kang-Yi, Christian Preischl, Christian Felix Hermanns, et al. "Electron beam-induced etching of SiO₂, Si₃N₄, and poly-Si assisted by CF₄/O₂ remote plasma." Journal of Vacuum Science & Technology A 41, no. 1 (2023): 013004. http://dx.doi.org/10.1116/6.0002234.

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Electron-stimulated etching of surfaces functionalized by remote plasma is a flexible and novel approach for material removal. In comparison with plasma dry etching, which uses the ion-neutral synergistic effect to control material etching, electron beam-induced etching (EBIE) uses an electron-neutral synergistic effect. This approach appears promising for the reduction of plasma-induced damage (PID), including atomic displacement and lateral straggling, along with the potential for greater control and lateral resolution. One challenge for EBIE is the limited selection of chemical precursor mo

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3

Hatayama, Tomoaki, S. Takenami, Hiroshi Yano, Yukiharu Uraoka, and Takashi Fuyuki. "Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System." Materials Science Forum 556-557 (September 2007): 283–86. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.283.

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By the use of Cl2-O2 thermal etching method, the etching rates of 4H-SiC were reached to about 1μm/h for Si and 40μm/h for C face at 950oC. Etch pits only appeared over 0.25-μm-etched depth on the 4H-SiC (0001) Si face. The shapes and density of etch pits are similar tendencies in the case of molten KOH etched surface. To study the relationship between thermally etched surface features and crystal defects, the planar mapping electron-beam-induced current (EBIC) technique was carried out. Almost dark areas in the EBIC image correspond to the etch pits. From the EBIC image, a shell-like pit form

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4

Preischl, Christian, Linh Hoang Le, Elif Bilgilisoy, Armin Gölzhäuser, and Hubertus Marbach. "Exploring the fabrication and transfer mechanism of metallic nanostructures on carbon nanomembranes via focused electron beam induced processing." Beilstein Journal of Nanotechnology 12 (April 7, 2021): 319–29. http://dx.doi.org/10.3762/bjnano.12.26.

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Focused electron beam-induced processing is a versatile method for the fabrication of metallic nanostructures with arbitrary shape, in particular, on top of two-dimensional (2D) organic materials, such as self-assembled monolayers (SAMs). Two methods, namely electron beam-induced deposition (EBID) and electron beam-induced surface activation (EBISA) are studied with the precursors Fe(CO)5 and Co(CO)3NO on SAMs of 1,1′,4′,1′′-terphenyl-4-thiol (TPT). For Co(CO)3NO only EBID leads to deposits consisting of cobalt oxide. In the case of Fe(CO)5 EBID and EBISA yield deposits consisting of iron nano

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5

Lu, Jinggang, George A. Rozgonyi, James Rand, and Ralf Jonczyk. "EBIC Study of Electrical Activity of Stacking Faults in Multicrystalline Sheet Silicon." Solid State Phenomena 108-109 (December 2005): 627–30. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.627.

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The electrical activity of stacking faults (SFs) in multicrystalline sheet silicon has been examined by correlating EBIC(electron beam induced current), preferential defect etching, and microwave photo-conductance decay (PCD) lifetime measurements. Following a three hour 1060 0C annealing the interstitial oxygen concentration decreased from 14 to 4.5 x 1017 cm-3, during which time a high density of SFs were generated in the center of individual large grains. Subsequent EBIC contrast variation within individual large grains was correlated with the local SF density revealed by preferential etchi

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6

Yao, Yong Zhao, Yoshihiro Sugawara, Yukari Ishikawa, et al. "Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na₂O₂ Etching." Materials Science Forum 679-680 (March 2011): 294–97. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.294.

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Dislocations in highly doped n-type 4H-SiC (n+-SiC, n>1019 cm-3) substrate have been studied by means of electron beam induced current (EBIC). Ni/n-SiC/n+-SiC/Al structure was fabricated in order to simultaneously observe the dislocations in n-SiC epilayer and n+-SiC substrate. We have found that dark dots in the EBIC image correspond to threading screw dislocations (TSDs) and threading edge dislocations (TEDs) with the former being relatively darker. Short dark lines along off-cut are attributed to basal plane dislocations (BPDs) in the epilayer; and the randomly oriented long dark lines a

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7

Zhang, Ze Hong, Ying Gao, Arul Arjunan, et al. "CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates." Materials Science Forum 483-485 (May 2005): 113–16. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.113.

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Thick epilayers up to 60 µm have been grown on ) 0 2 11 ( face SiC substrates at a growth rate of 15 µm/hr by chemical vapor deposition (CVD). The epilayer surface is extremely smooth with a RMS roughness of 0.6 nm for a 20µm×20µm area. Threading screw and edge dislocations parallel to the c-axis are present in the ) 0 2 11 ( substrate; however, they do not propagate into the epilayer. The I-V characteristics of the Schottky diodes on this face were studied. Basal plane (0001) dislocations with a density of ~105 cm-2 were found in the ) 0 2 11 ( epilayers by molten KOH etching and electron bea

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8

Martín, P., J. Jiménez, C. Frigeri, L. F. Sanz, and J. L. Weyher. "A study of the dislocations in Si-doped GaAs comparing diluted Sirtl light etching, electron-beam-induced current, and micro-Raman techniques." Journal of Materials Research 14, no. 5 (1999): 1732–43. http://dx.doi.org/10.1557/jmr.1999.0235.

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Impurity atmospheres around dislocations have been studied in n-type Si-doped liquid encapsulated Czochralski (LEC) GaAs substrates by micro-Raman spectroscopy, diluted Sirtl-like etching with light (DSL) method, and electron-beam-induced current (EBIC). A complete morphological study of the recombinative atmospheres revealed by photoetching was achieved by phase stepping microscopy (PSM), which is an optical interferometry technique allowing to obtain the surface topography with a high vertical resolution (in the nanometer range). The minority carrier diffusion length was measured by EBIC at

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9

Rykaczewski, Konrad, Owen J. Hildreth, Dhaval Kulkarni, et al. "Maskless and Resist-Free Rapid Prototyping of Three-Dimensional Structures Through Electron Beam Induced Deposition (EBID) of Carbon in Combination with Metal-Assisted Chemical Etching (MaCE) of Silicon." ACS Applied Materials & Interfaces 2, no. 4 (2010): 969–73. http://dx.doi.org/10.1021/am1000773.

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10

Banik, Avishek, and Justin Sambur. "Intra-Particle Materials Heterogeneity and Impact of Surface Structure on Spatial Charge Separation in a Single BiVO₄Particle for Photoelectrochemical Water-Splitting." ECS Meeting Abstracts MA2025-01, no. 39 (2025): 2056. https://doi.org/10.1149/ma2025-01392056mtgabs.

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Achieving spatial charge separation between different facets on a single crystal remained a key approach in improving efficacy of semiconductor-based photocatalysts.1 BiVO4 is a model water oxidation material in water splitting. It is believed that in case of a highly faceted anisotropic BiVO4 particle, photogenerated charges are spatially separated to different exposed facets (holes to {110} and electrons to {010} facets) due to energy level offsets between the different crystal facets.1 However, the effect of exposed facets in spatial separation of charges is illusive. Specifically, it is un

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11

Martin, Aiden A., Geoffrey McCredie, and Milos Toth. "Electron beam induced etching of carbon." Applied Physics Letters 107, no. 4 (2015): 041603. http://dx.doi.org/10.1063/1.4927593.

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12

Martin, Aiden A., and Milos Toth. "Cryogenic Electron Beam Induced Chemical Etching." ACS Applied Materials & Interfaces 6, no. 21 (2014): 18457–60. http://dx.doi.org/10.1021/am506163w.

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13

Hari, Sangeetha, Willem F. van Dorp, Johannes J. L. Mulders, Piet H. F. Trompenaars, Pieter Kruit, and Cornelis W. Hagen. "Sidewall angle tuning in focused electron beam-induced processing." Beilstein Journal of Nanotechnology 15 (April 23, 2024): 447–56. http://dx.doi.org/10.3762/bjnano.15.40.

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Structures fabricated using focused electron beam-induced deposition (FEBID) have sloped sidewalls because of the very nature of the deposition process. For applications this is highly undesirable, especially when neighboring structures are interconnected. A new technique combining FEBID and focused electron beam-induced etching (FEBIE) has been developed to fabricate structures with vertical sidewalls. The sidewalls of carbon FEBID structures have been modified by etching with water and it is shown, using transmission electron microscopy imaging, that the sidewall angle can be tuned from outw

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14

Thiele, Cornelius, Alexandre Felten, Tim J. Echtermeyer, et al. "Electron-beam-induced direct etching of graphene." Carbon 64 (November 2013): 84–91. http://dx.doi.org/10.1016/j.carbon.2013.07.038.

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15

Randolph, S. J., J. D. Fowlkes, and P. D. Rack. "Focused electron-beam-induced etching of silicon dioxide." Journal of Applied Physics 98, no. 3 (2005): 034902. http://dx.doi.org/10.1063/1.1991976.

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16

MATSUI, Shinji, Masakazu BABA, Heiji WATANABE, and Jun-ichi FUJITA. "Nanometer Etching Using Electron Beam Induced Surface Reactions." Hyomen Kagaku 16, no. 6 (1995): 353–59. http://dx.doi.org/10.1380/jsssj.16.353.

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17

Randolph, Steven, Milos Toth, Jared Cullen, Clive Chandler, and Charlene Lobo. "Kinetics of gas mediated electron beam induced etching." Applied Physics Letters 99, no. 21 (2011): 213103. http://dx.doi.org/10.1063/1.3662928.

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18

Randolph, S. J., J. D. Fowlkes, and P. D. Rack. "Focused, Nanoscale Electron-Beam-Induced Deposition and Etching." Critical Reviews in Solid State and Materials Sciences 31, no. 3 (2006): 55–89. http://dx.doi.org/10.1080/10408430600930438.

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19

Matsui, Shinji. "Electron beam induced selective etching and deposition technology." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 7, no. 5 (1989): 1182. http://dx.doi.org/10.1116/1.584570.

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20

Matsui, Shinji, Toshinori Ichihashi, Masakazu Baba, and Akinobu Satoh. "Electron beam induced selective etching and deposition technology." Superlattices and Microstructures 7, no. 4 (1990): 295–301. http://dx.doi.org/10.1016/0749-6036(90)90213-q.

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21

Vanhove, N., P. Lievens, and W. Vandervorst. "Electron beam induced etching of silicon with SF6." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28, no. 6 (2010): 1206–9. http://dx.doi.org/10.1116/1.3504594.

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22

Elbadawi, Christopher, Mehran Kianinia, Avi Bendavid, and Charlene J. Lobo. "Charged Particle Induced Etching and Functionalization of Two-Dimensional Materials." ECS Journal of Solid State Science and Technology 11, no. 3 (2022): 035011. http://dx.doi.org/10.1149/2162-8777/ac5eb2.

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Focused electron beam induced deposition and etching (FEBID and FEBIE) are direct-write nanofabrication techniques in which an electron beam is used to achieve nanostructure functionalization, etching or deposition. Either alone or in combination with in situ plasmas, these techniques can also be used to accelerate reactions that occur in ambient environment, with simultaneous high-resolution imaging. Here, we describe our recent work on etching, functionalization and directed assembly of a range of nano- and two-dimensional materials using temperature-dependent FEBIE experiments in an environ

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23

Toth, Milos, Charlene Lobo, Vinzenz Friedli, Aleksandra Szkudlarek, and Ivo Utke. "Continuum models of focused electron beam induced processing." Beilstein Journal of Nanotechnology 6 (July 14, 2015): 1518–40. http://dx.doi.org/10.3762/bjnano.6.157.

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Focused electron beam induced processing (FEBIP) is a suite of direct-write, high resolution techniques that enable fabrication and editing of nanostructured materials inside scanning electron microscopes and other focused electron beam (FEB) systems. Here we detail continuum techniques that are used to model FEBIP, and release software that can be used to simulate a wide range of processes reported in the FEBIP literature. These include: (i) etching and deposition performed using precursors that interact with a surface through physisorption and activated chemisorption, (ii) gas mixtures used

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24

Toth, Milos, Charlene J. Lobo, Gavin Hartigan, and W. Ralph Knowles. "Electron flux controlled switching between electron beam induced etching and deposition." Journal of Applied Physics 101, no. 5 (2007): 054309. http://dx.doi.org/10.1063/1.2437667.

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25

Toth, M., R. Knowles, G. Hartigan, and C. Lobo. "Electron Flux Controlled Switching Between Electron Beam Induced Etching and Deposition." Microscopy and Microanalysis 12, S02 (2006): 168–69. http://dx.doi.org/10.1017/s1431927606069753.

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26

Watanabe, Heiji, and Shinji Matsui. "GaAs Dry Etching Using Electron Beam Induced Surface Reaction." Japanese Journal of Applied Physics 30, Part 1, No. 11B (1991): 3190–94. http://dx.doi.org/10.1143/jjap.30.3190.

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27

Roediger, P., G. Hochleitner, E. Bertagnolli, H. D. Wanzenboeck, and W. Buehler. "Focused electron beam induced etching of silicon using chlorine." Nanotechnology 21, no. 28 (2010): 285306. http://dx.doi.org/10.1088/0957-4484/21/28/285306.

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28

Schoenaker, F. J., R. Córdoba, R. Fernández-Pacheco, et al. "Focused electron beam induced etching of titanium with XeF2." Nanotechnology 22, no. 26 (2011): 265304. http://dx.doi.org/10.1088/0957-4484/22/26/265304.

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29

Bret, T., B. Afra, R. Becker, et al. "Gas assisted focused electron beam induced etching of alumina." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27, no. 6 (2009): 2727. http://dx.doi.org/10.1116/1.3243208.

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30

Akita, K., Y. Sugimoto, and H. Kawanishi. "Electron-beam-induced maskless HCl pattern etching of GaAs." Semiconductor Science and Technology 6, no. 9 (1991): 934–36. http://dx.doi.org/10.1088/0268-1242/6/9/017.

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31

Perry, John M., Zachary D. Harms, and Stephen C. Jacobson. "3D Nanofluidic Channels Shaped by Electron-Beam-Induced Etching." Small 8, no. 10 (2012): 1521–26. http://dx.doi.org/10.1002/smll.201102240.

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32

Winkler, Dieter, Hans Zimmermann, Margot Mangerich, and Robert Trauner. "E-beam probe station with integrated tool for electron beam induced etching." Microelectronic Engineering 31, no. 1-4 (1996): 141–47. http://dx.doi.org/10.1016/0167-9317(95)00336-3.

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33

Kohlmann-von Platen, K. T. "Electron-beam induced etching of resist with water vapor as the etching medium." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, no. 6 (1996): 4262. http://dx.doi.org/10.1116/1.588587.

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34

Wang, D. "Lithography using electron beam induced etching of a carbon film." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 13, no. 5 (1995): 1984. http://dx.doi.org/10.1116/1.588119.

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35

Choi, Young R., Philip D. Rack, Bernhard Frost, and David C. Joy. "Effect of Electron Beam-Induced Deposition and Etching Under Bias." Scanning 29, no. 4 (2007): 171–76. http://dx.doi.org/10.1002/sca.20060.

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36

Sidorov, Fedor, and Alexander Rogozhin. "A Model for Dry Electron Beam Etching of Resist." Polymers 16, no. 20 (2024): 2880. http://dx.doi.org/10.3390/polym16202880.

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This paper presents a detailed physical model for a novel method of two- and three-dimensional microstructure formation: dry electron beam etching of the resist (DEBER). This method is based on the electron-beam induced thermal depolymerization of positive resist, and its advantages include high throughput and relative simplicity compared to other microstructuring techniques. However, the exact mechanism of profile formation in DEBER has been unclear until now, hindering the optimization of this technique for certain applications. The developed model takes into account the major DEBER phenomen

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37

Lami, Sarah K., Gabriel Smith, Eric Cao, and J. Todd Hastings. "The radiation chemistry of focused electron-beam induced etching of copper in liquids." Nanoscale 11, no. 24 (2019): 11550–61. http://dx.doi.org/10.1039/c9nr01857c.

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Well-controlled, focused electron-beam induced etching of copper thin films has been successfully conducted on bulk substrates in an environmental scanning electron microscope by controlling liquid-film thickness with an in situ correlative interferometry system.

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38

Lobo, Charlene J., Aiden Martin, Matthew R. Phillips, and Milos Toth. "Electron beam induced chemical dry etching and imaging in gaseous NH3environments." Nanotechnology 23, no. 37 (2012): 375302. http://dx.doi.org/10.1088/0957-4484/23/37/375302.

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39

Yemini, M., B. Hadad, Y. Liebes, A. Goldner, and N. Ashkenasy. "The controlled fabrication of nanopores by focused electron-beam-induced etching." Nanotechnology 20, no. 24 (2009): 245302. http://dx.doi.org/10.1088/0957-4484/20/24/245302.

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40

Boehme, Lindsay, Matthew Bresin, Aurélien Botman, James Ranney, and J. Todd Hastings. "Focused electron beam induced etching of copper in sulfuric acid solutions." Nanotechnology 26, no. 49 (2015): 495301. http://dx.doi.org/10.1088/0957-4484/26/49/495301.

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41

Fronzi, Marco, James Bishop, Aiden A. Martin, et al. "Role of knock-on in electron beam induced etching of diamond." Carbon 164 (August 2020): 51–58. http://dx.doi.org/10.1016/j.carbon.2020.03.039.

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42

Miyazoe, Hiroyuki, Ivo Utke, Johann Michler, and Kazuo Terashima. "Controlled focused electron beam-induced etching for the fabrication of sub-beam-size nanoholes." Applied Physics Letters 92, no. 4 (2008): 043124. http://dx.doi.org/10.1063/1.2839334.

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43

Chu, Hongchen, Qianming An, Xianhui Ye, et al. "In Situ Growth, Etching, and Charging of Nanoscale Water Ice Under Fast Electron Irradiation in Environmental TEM." Nanomaterials 15, no. 10 (2025): 726. https://doi.org/10.3390/nano15100726.

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Understanding the formation, structural evolution, and response of water ice at the nanoscale is essential for advancing research in fields such as cryo-electron microscopy and atmospheric science. In this work, we used environmental transmission electron microscopy (ETEM) to investigate the formation of water ice nanostructures and the etching and charging behaviors of ice under fast electron irradiation. These nanostructures were observed to be suspended along the edges of copper grids and supported on few-layer graphene. We varied growth parameters (temperature and time) to produce water ic

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44

Szkudlarek, Aleksandra, Jan M. Michalik, Inés Serrano-Esparza, et al. "Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO₂ substrates." Beilstein Journal of Nanotechnology 15 (February 7, 2024): 190–98. http://dx.doi.org/10.3762/bjnano.15.18.

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Graphene is one of the most extensively studied 2D materials, exhibiting extraordinary mechanical and electronic properties. Although many years have passed since its discovery, manipulating single graphene layers is still challenging using standard resist-based lithography techniques. Recently, it has been shown that it is possible to etch graphene directly in water-assisted processes using the so-called focused electron-beam-induced etching (FEBIE), with a spatial resolution of ten nanometers. Nanopatterning graphene with such a method in one single step and without using a physical mask or

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45

Goler, Sarah, Vincenzo Piazza, Stefano Roddaro, Vittorio Pellegrini, Fabio Beltram, and Pasqualantonio Pingue. "Self-assembly and electron-beam-induced direct etching of suspended graphene nanostructures." Journal of Applied Physics 110, no. 6 (2011): 064308. http://dx.doi.org/10.1063/1.3633260.

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46

Clausen, E. M. "Electron beam induced modification of GaAs surfaces for maskless thermal Cl2 etching." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 8, no. 6 (1990): 1830. http://dx.doi.org/10.1116/1.585168.

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47

Martin, Aiden A., Alan Bahm, James Bishop, Igor Aharonovich, and Milos Toth. "Formation of Dynamic Topographic Patterns During Electron Beam Induced Etching of Diamond." Microscopy and Microanalysis 23, S1 (2017): 2264–65. http://dx.doi.org/10.1017/s1431927617011989.

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48

Fowlkes, J., DA Smith, MG Lassiter, and PD Rack. "Electron Beam Induced Deposition and Etching: Fundamentals, Challenges and Nanotechnology–based Applications." Microscopy and Microanalysis 15, S2 (2009): 318–19. http://dx.doi.org/10.1017/s1431927609099176.

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49

Martin, A. A., I. Aharonovich, and M. Toth. "Gas-Mediated Electron Beam Induced Etching - From Fundamental Physics to Device Fabrication." Microscopy and Microanalysis 20, S3 (2014): 364–65. http://dx.doi.org/10.1017/s1431927614003547.

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50

Dergianlis, Vasilis, Martin Geller, Dennis Oing, Nicolas Wöhrl, and Axel Lorke. "Patterning of diamond with 10 nm resolution by electron-beam-induced etching." Nanotechnology 30, no. 36 (2019): 365302. http://dx.doi.org/10.1088/1361-6528/ab25fe.

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