Relevant bibliographies by topics / Electron beam microanalysis

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Electron beam microanalysis'

Author: Grafiati
Published: 4 June 2021
Last updated: 19 February 2022

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Journal articles on the topic "Electron beam microanalysis"

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Howitt, D. G., and D. L. Medlin. "Beam Induced Composition Modifications During Electron Beam Microanalysis." Microscopy and Microanalysis 4, S2 (July 1998): 228–29. http://dx.doi.org/10.1017/s1431927600021267.

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The most common cause of composition modification to a specimen during electron probe microanalysis is the field induced migration of light elements. This is an indirect effect which occurs in response to the long range electric fields that form when dielectric specimens suffer charge imbalance. The result is that the ions are redistributed within the sample according to their respective mobilities and the affect is enhanced rather than eliminated when the sample is coated. The ions typically move radially outward in thin samples because of the excess production of secondary electrons from the specimen surfaces, Cazaux(1986)and downwards in conventional SEM samples when the field is due primarily to the deposition of electrons within the bulk of the specimenField induced migration is responsible for most of the elemental signal variations observed during the microanalysis of silicate glasses containing sodium or potassium ions.
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Stevens Kalceff, Marion A. "Irradiation Induced Effects in the Environmental Scanning Electron Microscope." Microscopy and Microanalysis 5, S2 (August 1999): 276–77. http://dx.doi.org/10.1017/s1431927600014707.

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When a poorly conducting specimen is irradiated with an electron beam in a variable pressure electron microscope, the excess charge on the surface of the specimen can be neutralized by incident gas ions to prevent deflection and retarding of the electron beam. A small fraction (<10∼6) of the incident electrons are trapped at irradiation induced or pre-existing defects within the irradiated micro-volume of specimen. The trapped charge induces an electric field, which may result in the electro-migration and micro-segregation of charged mobile defect species within the irradiated volume of specimen. These charge induced effects are dependent on the density of trapping centers and their capture cross sections. In particular, evidence of these micro-diffusion processes can be directly observed in electron beam irradiated ultra pure silicon dioxide (SiO2) polymorphs using Cathodoluminescence (CL) microanalysis (spectroscopy and imaging). CL microanalysis enables both pre-existing and irradiation induced defects in wide band gap materials (i.e. semiconductors and insulators) to be monitored and characterized with high sensitivity and spatial resolution. Depth resolution is achieved by varying the electron beam energy.
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Meisenkothen, Frederick, Robert Wheeler, Michael D. Uchic, Robert D. Kerns, and Frank J. Scheltens. "Electron Channeling: A Problem for X-Ray Microanalysis in Materials Science." Microscopy and Microanalysis 15, no. 2 (March 16, 2009): 83–92. http://dx.doi.org/10.1017/s1431927609090242.

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AbstractElectron channeling effects can create measurable signal intensity variations in all product signals that result from the scattering of the electron beam within a crystalline specimen. Of particular interest to the X-ray microanalyst are any variations that occur within the characteristic X-ray signal that are not directly related to a specimen composition variation. Many studies have documented the effect of crystallographic orientation on the local X-ray yield; however, the vast majority of these studies were carried out on thin foil specimens examined in transmission. Only a few studies have addressed these effects in bulk specimen materials, and these analyses were generally carried out at common scanning electron microscope microanalysis overvoltages (>1.5). At these overvoltage levels, the anomalous transmission effect is weak. As a result, the effect of electron channeling on the characteristic X-ray signal intensity has traditionally been overlooked in the field of quantitative electron probe microanalysis. The present work will demonstrate that electron channeling can produce X-ray variations of up to 26%, between intensity maxima and minima, in low overvoltage X-ray microanalyses of bulk specimens. Intensity variations of this magnitude will significantly impact the accuracy of qualitative and quantitative X-ray microanalyses at low overvoltage on engineering structural materials.
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Santala, M., B. Reed, T. LaGrange, G. Campbell, and N. Browning. "Dynamic Convergent Beam Electron Diffraction." Microscopy and Microanalysis 17, S2 (July 2011): 508–9. http://dx.doi.org/10.1017/s1431927611003412.

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Ottensmeyer, F. P., and X. G. Jiang. "High-resolution electron spectrometers for molecular microanalysis." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 664–65. http://dx.doi.org/10.1017/s0424820100105382.

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The last decade has brought major advances in electron beam induced microanalytical capabilities, particularly with the utilization of energy loss electrons. These developments have been predicated primarily by the design and by the more ready commercial availabilty of better magnetic spectrometers, both for scanning transmission and fixed-beam transmission electron microscopy.Theoretical and experimental investigation of spatial resolution or localization possible for microanalysis and elemental mapping has indicated a potential of about 0.5 nm at an energy loss close to 100 eV, improving slowly with increasing energy loss. At lower energy loss the spatial resolution worsens due to an expected increase in impact parameter, but is still anticipated to be of the order of 1 nm at a 10 eV loss.Coupled with high spatial resolution is an experimentally observed very high sensitivity of detection and identification of a very small number of atoms at high concentration.
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Stevens Kalceff, M. A., M. R. Phillips, and A. R. Moon. "Cathodoluminescence Investigation of Electron Irradiation Damage in Insulators." Microscopy and Microanalysis 3, S2 (August 1997): 749–50. http://dx.doi.org/10.1017/s1431927600010631.

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Cathodoluminescence (CL) is the luminescent emission from a material which has been irradiated with electrons. Cathodoluminescence microanalysis (spectroscopy and microscopy) in an electron microscope complements the average defect structure information available from complementary techniques (e.g. Photoluminescence, Electron Spin Resonance spectroscopy). CL microanalysis enables both pre-existing and irradiation induced local variations in the bulk and surface defect structure to be characterized with high spatial (lateral and depth) resolution and sensitivity. This is possible as electron beam parameters such as the beam energy, may be varied to finely control the penetration depth of the incident electrons and hence the local volume of specimen probed.Irradiation with charged and neutral energetic radiation produces defects in radiation sensitive materials. The energetic electron beam in an electron microscope may also induce defects in the specimen. Cazaux has characterized the electric field produced by electron irradiation of a insulator with a conductive surface coating
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Carlton, Robert A., Charles E. Lyman, James E. Roberts, and Raynald Gauvin. "Evaluation of Corrections for X-Ray Microanalysis in the ESEM." Microscopy and Microanalysis 7, S2 (August 2001): 698–99. http://dx.doi.org/10.1017/s1431927600029561.

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A number of methods have been proposed to correct for the electron beam scattering effects on xray microanalysis in the environmental scanning electron microscope (ESEM). This paper presents an evaluation of two of these methods. The Doehne method is based on the observation that x-ray counts due to the unscattered electron beam increase with decreasing chamber pressure whereas the inverse is true for x-ray counts due to scattered electrons. The x-ray count intercept, at zero pressure, of the regression lines relating x-ray counts to chamber vapor pressure is an estimate of the high-vacuum intensity. The Gauvin method is based on the relationship between x-ray counts and the fraction of the electron beam that is unscattered, fp.The fraction of the unscattered beam is calculated using an equation derived from scattering theory and uses the accelerating voltage, the gas path length, and the chamber vapor pressure.
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Kasama, Takeshi, Rafal E. Dunin-Borkowski, Simon B. Newcomb, and Martha R. McCartney. "Electron Beam Induced Charging of Focused Ion Beam Milled Semiconductor Transistors Examined Using Electron Holography." Microscopy and Microanalysis 10, S02 (August 2004): 988–89. http://dx.doi.org/10.1017/s1431927604883132.

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Garratt-Reed, Anthony J. "Microanalysis of boundaries by AEM at different voltages." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 600–601. http://dx.doi.org/10.1017/s0424820100148836.

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It is well known that theory predicts a number of benefits for high-resolution analytical electron microscopy (AEM) in raising the electron energy. These benefits arise from three principal effects, namely, an anticipated linear decrease in the beam broadening in the foil with increasing energy, and an increase in the electron gun brightness with increasing energy, and an increase in the X-ray peak-tobackground ratio as the electron energy is raised. In addition, the decrease in the electron wavelength with increasing energy can also lead to improvement in the image resolution, although generally not in the microanalytical resolution. To set off against these benefits is the disadvantage that the ionization cross-section decreases with increasing beam voltage. However, although for the case of nonrelativistic electrons this can be a significant effect, in most cases, for relativistic electrons (those used for intermediate-voltage AEM, for example) this decrease is not severe. For example, fig. 1 plots the ionization cross-section for iron for electrons in the range 20-500kV, according to the relativistic equation of Chapman et. al. A further area of interest is the effect of radiation damage in the sample, which may increase or decrease at higher voltages.
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Gauvin, Raynald. "X-Ray Microanalysis of Materials in the ESEM or VP-SEM." Microscopy and Microanalysis 7, S2 (August 2001): 778–79. http://dx.doi.org/10.1017/s1431927600029962.

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When performing X-Ray microanalysis in the ESEM (Environmental Scanning Electron Microscope) or in the VP-SEM (Variable Pressure Scanning Electron Microscope), the operating conditions of the microscope must be optimized. This is to reduce the beam broadening of the incident electrons when they scatter with the gas molecules before entering into the specimen. As a result of this scattering, the incident beam is composed of two parts. The first part of the beam is the unscattered beam and the second part is the scattered beam, named the skirt. in high pressure and long working distances conditions, the diameter of the skirt may extend to several millimeters. in order to show the effect of the skirt on X-Ray generation, a copper strip was placed .5 mm away of the electron beam on a flat Al specimen. The peak to background ratio of the copper line was measured at different pressure (from 25 to 200 Pa) for Air as gas.
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Dissertations / Theses on the topic "Electron beam microanalysis"

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Severs, John. "Microstructural characterisation of novel nitride nanostructures using electron microscopy." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:6229b51e-70e7-4431-985e-6bcb63bd99d1.

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Novel semiconductor nanostructures possess a range of notable properties that have the potential to be harnessed in the next generation of optical devices. Electron microscopy is uniquely suited to characterising the complex microstructure, the results of which may be related to the growth conditions and optical properties. This thesis investigates three such novel materials: (1) GaN/InGaN core/shell nanowires, (2) n-GaN/InGaN/p-GaN core/multi-shell microrods and (3) Zn3N2 nanoparticles, all of which were grown at Sharp Laboratories of Europe. GaN nanowires were grown by a Ni-catalysed VLS process and were characterised by various techniques before and after InGaN shells were deposited by MOCVD. The majority of the core wires were found to have the expected wurtzite structure and completely defect free – reflected in the strong strain-free photoluminescence peak –with a- and m- axis orientations identified with shadow imaging. A small component, <5%, were found to have the cubic zinc-blende phase and a high density of planar faults running the length of the wires. The deposited shells were highly polycrystalline, partially attributed to a layer of silicon at the core shell interface identified through FIB lift-out of cross section samples, and accordingly the PL was very broad likely due to recombination at defects and grain boundaries. A high throughput method of identifying the core size indirectly via the catalyst particle EDX signal is described which may be used to link the shell microstructure to core size in further studies. An n-GaN/InGaN/p-GaN shell structure was deposited by MOCVD on the side walls of microrods etched from c-axis GaN film on sapphire, which offers the possibility of achieving non-polar junctions without the issues due to non-uniformity found in nanowires. Threading dislocations within the core related to the initial growth on sapphire were shown to be confined to this region, therefore avoiding any harmful effect on the junction microstructure. The shell defect density showed a surprising relationship to core size with the smaller diameter rods having a high density of unusual 'flag' defects in the junction region whereas the larger diameter sample shells appeared largely defect free, suggesting the geometry of the etched core has an impact on the strain in the shell layers. The structure of unusual 'flag' defects in the m-plane junctions was characterised via diffraction contrast TEM, weak beam and atomic resolution ADF STEM and were shown to consist of a basal plane stacking faults meeting a perfect or partial dislocation loop on a pyramidal plane, the latter likely gliding in to resolve residual strain due to the fault formed during growth. Zn3N2 has the required bandgap energy to be utilised as a phosphor with the additional advantage over conventional materials of its constituent elements not being toxic or scarce. The first successful synthesis of Zn3N2 nanoparticles appropriate to this application was confirmed via SAD, EDX and HRTEM, with software developed to fit experimental polycrystalline diffraction patterns to simulated components suggesting a maximum Zn3N2 composition of ~30%. There was an apparent decrease in crystallinity with decreasing particle size evidenced in radial distribution function studies with the smallest particles appearing completely amorphous in 80kV HRTEM images. A rapid change in the particles under the electron beam was observed, characterised by growth of large grains of Zn3N2 and ZnO which increased with increasing acceleration voltage suggesting knock-on effects driving the change. PL data was consistent with the bandgap of Zn3N2 blue shifted from 1.1eV to around 1.8eV, confirming the potential of the material for application as a phosphor.
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Schilling, Sibylle. "Liquid in situ analytical TEM : technique development and applications to austenitic stainless steel." Thesis, University of Manchester, 2017. https://www.research.manchester.ac.uk/portal/en/theses/liquid-in-situ-analytical-tem-technique-development-and-applications-to-austenitic-stainless-steel(fd490551-7d7a-4b2e-9b1f-917b5f8165b3).html.

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Environmentally-assisted cracking (EAC) phenomena affect the in-service behaviour of austenitic stainless steels in nuclear power plants. EAC includes such degradation phenomena as Stress Corrosion Cracking (SCC) and Corrosion Fatigue (CF). Factors affecting EAC include the material type, microstructure, environment, and stress. This is an important degradation issue for both current and Gen III+ light water reactors, particularly as nuclear power plant lifetimes are extended ( > 60 years). Thus, it is important to understand the behaviour of the alloys used in light water reactors, and phenomena such as SCC to avoid failures. Although there is no agreement on the mechanism(s) of SCC, the importance of localized electrochemical reactions at the material surface is widely recognised. Considerable research has been performed on SCC and CF crack growth, but the initiation phenomena are not fully understood. In this project, novel in situ analytical TEM techniques have been developed and applied to explore localised reactions in Type 304 austenitic stainless steel. In situ transmission electron microscopy has become an increasingly important and dynamic research area in materials science with the advent of unique microscope platforms and a range of specialized in situ specimen holders. In metals research, the ability to image and perform X-ray energy dispersive spectroscopy (XED) analyses of metals in liquids are particularly important for detailed study of the metal-environment interactions with specific microstructural features. To further facilitate such studies a special hybrid specimen preparation technique involving electropolishing and FIB extraction has been developed in this thesis to enable metal specimens to be examined in the liquid cell TEM specimen holder using both distilled H2O and H2SO4 solutions. Furthermore, a novel electrode configuration has been designed to permit the localized electrochemical measurement of electron-transparent specimens in the TEM. These novel approaches have been benchmarked by extensive ex situ experiments, including both conventional electrochemical measurements and microcell measurements. The results are discussed in terms of validation of in situ test data as well as the role of the electron beam in the experiments. In situ liquid cell TEM experiments have also explored the localized dissolution of MnS inclusions in H2O, and correlated the behaviour with ex situ experiments. Based on the research performed in this thesis, in situ liquid cell and in situ electrochemical cell experiments can be used to study nanoscale reactions pertaining to corrosion and localized dissolution leading to "precursor" events for subsequent EAC phenomena.
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Gorfu, Paulos. "Untersuchung von Dünnschichtsystemen mittels Elektronenstrahl-Mikroanalyse." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2009. http://nbn-resolving.de/urn:nbn:de:bsz:14-ds-1237375992053-95064.

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Die Arbeit beschäftigt sich mit der Erweiterung der für dicke Proben schon mit Erfolg eingesetzten Werkstoffanalytischen Methode Elektronenstrahl-Mikroanalyse (ESMA) mittels Peak/Untergrund-Verhältnissen auf die Analyse von dünnen Schichten (unter 1 μm) zur qualitative und quantitativen Elementanalyse sowie zur Ermittlung von Schichtdicken. Weiterhin wird auf der Basis von einer ESMA-Methode für zwei dünne Schichten auf einem Substrat wird ein Modell zur Ermittlung des Phasenwachstumskoeffizienten für eine intermetallische Phase die sich bei der Diffusion zwischen einer dünnen Schicht und einem Substrat bildet, mittels ESMA-Messungen bei gleichzeitiger Erwärmung der Probe dargestellt
The paper deals with the application of the materials analysis method EPMA by peak-to-background ratios, which is currently being used for the analysis of thick samples successfully, to thin layers (less than 1 μm) for the quantitative element analysis as well as for thickness prediction. In addition a model has been established on the Basis of an EPMA method for two films on a substrate for deriving the phase growth coefficient of an inter-metallic phase which grows during the diffusion between a thin layer and a substrate from EPMA measurements while simultaneously heating the sample
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Gorfu, Paulos. "Untersuchung von Dünnschichtsystemen mittels Elektronenstrahl-Mikroanalyse." Doctoral thesis, Technische Universität Dresden, 1991. https://tud.qucosa.de/id/qucosa%3A23789.

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Die Arbeit beschäftigt sich mit der Erweiterung der für dicke Proben schon mit Erfolg eingesetzten Werkstoffanalytischen Methode Elektronenstrahl-Mikroanalyse (ESMA) mittels Peak/Untergrund-Verhältnissen auf die Analyse von dünnen Schichten (unter 1 μm) zur qualitative und quantitativen Elementanalyse sowie zur Ermittlung von Schichtdicken. Weiterhin wird auf der Basis von einer ESMA-Methode für zwei dünne Schichten auf einem Substrat wird ein Modell zur Ermittlung des Phasenwachstumskoeffizienten für eine intermetallische Phase die sich bei der Diffusion zwischen einer dünnen Schicht und einem Substrat bildet, mittels ESMA-Messungen bei gleichzeitiger Erwärmung der Probe dargestellt.
The paper deals with the application of the materials analysis method EPMA by peak-to-background ratios, which is currently being used for the analysis of thick samples successfully, to thin layers (less than 1 μm) for the quantitative element analysis as well as for thickness prediction. In addition a model has been established on the Basis of an EPMA method for two films on a substrate for deriving the phase growth coefficient of an inter-metallic phase which grows during the diffusion between a thin layer and a substrate from EPMA measurements while simultaneously heating the sample.
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Books on the topic "Electron beam microanalysis"

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Fuchs, Ekkehard. Particle beam microanalysis: Fundamentals, methods, and applications. Weinheim, F.R.G: VCH, 1990.

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Pfefferkorn Conference (8th 1989 Park City, Utah). Fundamental electron and ion beam interactions with solids for microscopy, microanalysis and microlithography: Proceedings of the 8th Pfefferkorn Conference, held May 7-12, 1989, at Park City, Utah. Edited by Johari Om, Kruit Pieter, Newbury Dale E, Schou Jørgen, and Sharma Ram A. AMF O'Hare, IL: Scanning Microscopy International, 1990.

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Conference, Microbeam Analysis Society. Microbeam analysis 1995: Proceedings of the 29th annual conference of the Microbeam Analysis Society, Breckenridge, Colorado, August 6-11, 1995. New York, N.Y: VCH Publishers, 1995.

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Scottish, Universities Summer School in Physics (40th 1992 Dundee Scotland). Quantitative microbeam analysis: Proceedings of the Fortieth Scottish Universities Summer School in Physics, Dundee, August 1992. Bristol: The School, 1993.

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Fuchs, Erich, H. Oppolzer, and H. Rehme. Particle Beam Microanalysis: Fundamentals, Methods and Applications. VCH Publishing, 1991.

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Goldstein, Joseph, Dale E. Newbury, and Williams David B. X-Ray Spectrometry in Electron Beam Instruments. Springer, 2012.

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1949-, Williams David B., Goldstein Joseph 1939-, and Newbury Dale E, eds. X-ray spectrometry in electron beam instruments. New York: Plenum Press, 1995.

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Jones, I. P. Chemical Microanalysis Using Electron Beams (Book). Ashgate Publishing, 1992.

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Jorgen. Scanning Microscopy Supplement 4, 1990: Fundamental Electron and Iron Beams Interactions With Solids for Microscopy and Microanalysis. Scanning Microscopy Intl, 1991.

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(Editor), A. G. Fitzgerald, B. E. Storey (Editor), and D. J. Fabian (Editor), eds. Quantitative Microbeam Analysis (Scottish Universities Summer School in Physics//Proceedings). Taylor & Francis, 1993.

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Book chapters on the topic "Electron beam microanalysis"

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Goldstein, Joseph I., Dale E. Newbury, Patrick Echlin, David C. Joy, Charles E. Lyman, Eric Lifshin, Linda Sawyer, and Joseph R. Michael. "Electron Beam–Specimen Interactions." In Scanning Electron Microscopy and X-ray Microanalysis, 61–98. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4615-0215-9_3.

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Lyman, Charles E., Joseph I. Goldstein, Alton D. Romig, Patrick Echlin, David C. Joy, Dale E. Newbury, David B. Williams, et al. "Electron Beam Parameters." In Scanning Electron Microscopy, X-Ray Microanalysis, and Analytical Electron Microscopy, 8–15. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4613-0635-1_2.

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Lyman, Charles E., Joseph I. Goldstein, Alton D. Romig, Patrick Echlin, David C. Joy, Dale E. Newbury, David B. Williams, et al. "Electron Beam Parameters." In Scanning Electron Microscopy, X-Ray Microanalysis, and Analytical Electron Microscopy, 189–96. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4613-0635-1_31.

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Goldstein, Joseph I., Dale E. Newbury, Joseph R. Michael, Nicholas W. M. Ritchie, John Henry J. Scott, and David C. Joy. "Ion Beam Microscopy." In Scanning Electron Microscopy and X-Ray Microanalysis, 529–39. New York, NY: Springer New York, 2017. http://dx.doi.org/10.1007/978-1-4939-6676-9_31.

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Lyman, Charles E., Joseph I. Goldstein, Alton D. Romig, Patrick Echlin, David C. Joy, Dale E. Newbury, David B. Williams, et al. "Convergent Beam Electron Diffraction." In Scanning Electron Microscopy, X-Ray Microanalysis, and Analytical Electron Microscopy, 153–56. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4613-0635-1_27.

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Lyman, Charles E., Joseph I. Goldstein, Alton D. Romig, Patrick Echlin, David C. Joy, Dale E. Newbury, David B. Williams, et al. "Convergent Beam Electron Diffraction." In Scanning Electron Microscopy, X-Ray Microanalysis, and Analytical Electron Microscopy, 389–400. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4613-0635-1_56.

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Goldstein, Joseph I., Dale E. Newbury, Joseph R. Michael, Nicholas W. M. Ritchie, John Henry J. Scott, and David C. Joy. "Low Beam Energy X-Ray Microanalysis." In Scanning Electron Microscopy and X-Ray Microanalysis, 359–80. New York, NY: Springer New York, 2017. http://dx.doi.org/10.1007/978-1-4939-6676-9_22.

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Newbury, Dale E., David C. Joy, Patrick Echlin, Charles E. Fiori, and Joseph I. Goldstein. "Modeling Electron Beam-Specimen Interactions." In Advanced Scanning Electron Microscopy and X-Ray Microanalysis, 3–43. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4757-9027-6_1.

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Goldstein, Joseph I., Dale E. Newbury, Joseph R. Michael, Nicholas W. M. Ritchie, John Henry J. Scott, and David C. Joy. "Low Beam Energy SEM." In Scanning Electron Microscopy and X-Ray Microanalysis, 165–72. New York, NY: Springer New York, 2017. http://dx.doi.org/10.1007/978-1-4939-6676-9_11.

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Goldstein, Joseph I., Dale E. Newbury, Joseph R. Michael, Nicholas W. M. Ritchie, John Henry J. Scott, and David C. Joy. "Electron Beam—Specimen Interactions: Interaction Volume." In Scanning Electron Microscopy and X-Ray Microanalysis, 1–14. New York, NY: Springer New York, 2017. http://dx.doi.org/10.1007/978-1-4939-6676-9_1.

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Conference papers on the topic "Electron beam microanalysis"

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Ng, F. L., and J. Wei. "X-Ray Microanalysis of Metallic Thin Films." In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-79319.

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Nickel and gold films are widely used for microsystems fabrication and packaging, as well as under bump metallization. In this paper, x-ray microanalysis was used to measure the thickness of Ni and Au films. Au and Ni films with varied thicknesses were deposited on silicon (Si) substrate by magnetron sputtering method. Incremental electron beam energy ranging from 4 keV to 30 keV was applied while other parameters were kept constant to determine the electron beam energy required to penetrate the metallic films. The effects of probe current at a fixed electron beam energy on the penetration depth were investigated too. With higher energy applied, the electron beam can penetrate deeper and more Si signal can be detected. The Ni and Au film thicknesses almost have linear relationship with the required penetration electron beam energy. The probe current has minimal effect on the specimen once it has reached the critical excitation probe current. For Ni and Au films with same thickness, higher energy or probe current is needed to penetrate the Au film to reach Si substrate due to the higher Au atomic weight.
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Lee, Sharon, Hua Younan, Zhao Siping, and Mo Zhiqiang. "Studies on Electron Penetration Versus Beam Acceleration Voltage in Energy-Dispersive X-Ray Microanalysis." In 2006 IEEE International Conference on Semiconductor Electronics. IEEE, 2006. http://dx.doi.org/10.1109/smelec.2006.380704.

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