Log in

Relevant bibliographies by topics / Electron circuits / Journal articles

To see the other types of publications on this topic, follow the link: Electron circuits.

Journal articles on the topic 'Electron circuits'

Author: Grafiati

Published: 4 June 2021

Last updated: 3 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Electron circuits.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Nicholls, David G. "Mitochondrial ion circuits." Essays in Biochemistry 47 (June 14, 2010): 25–35. http://dx.doi.org/10.1042/bse0470025.

Full text

Abstract:

Proton circuits across the inner mitochondrial membrane link the primary energy generators, namely the complexes of the electron transport chain, to multiple energy utilizing processes, including the ATP synthase, inherent proton leak pathways, metabolite transport and linked circuits of sodium and calcium. These mitochondrial circuits can be monitored in both isolated preparations and intact cells and, for the primary proton circuit techniques, exist to follow both the proton current and proton electrochemical potential components of the circuit in parallel experiments, providing a quantitati

APA, Harvard, Vancouver, ISO, and other styles

2

TAMEE, KREANGSAK, and PREECHA P. YUPAPIN. "PSYCHIATRIC INVESTIGATION USING WGMs IN MICRORING CIRCUITS." Journal of Innovative Optical Health Sciences 06, no. 04 (2013): 1350044. http://dx.doi.org/10.1142/s1793545813500442.

Full text

Abstract:

The use of an electrical probe is formed by whispering gallery modes (WGMs) of light within the coated microring circuits, in which the electrical signal is generated by trapped electron tunneling along the circular path of the coated microring circuit. The collection of electrons is formed within the WGMs, where in this study, a modified nonlinear microring resonator known as a PANDA ring resonator is coated by gold material and forms the mirroring circuit. The induced current (magnetic field) within the circuit occurs by the coupling effects between trapped electrons and coated ring, which c

APA, Harvard, Vancouver, ISO, and other styles

3

Ro¨sner, W., F. Hofmann, T. Vogelsang, and L. Risch. "Simulation of single electron circuits." Microelectronic Engineering 27, no. 1-4 (1995): 55–58. http://dx.doi.org/10.1016/0167-9317(94)00055-y.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

OYA, TAKAHIDE, IKUKO N. MOTOIKE, and TETSUYA ASAI. "SINGLE-ELECTRON CIRCUITS PERFORMING DENDRITIC PATTERN FORMATION WITH NATURE-INSPIRED CELLULAR AUTOMATA." International Journal of Bifurcation and Chaos 17, no. 10 (2007): 3651–55. http://dx.doi.org/10.1142/s0218127407019512.

Full text

Abstract:

We propose a novel semiconductor device in which electronic-analogue dendritic trees grow on multilayer single-electron circuits. A simple cellular-automaton circuit was designed for generating dendritic patterns by utilizing the physical properties of single-electron devices, i.e. quantum and thermal effects in tunneling junctions. We demonstrate typical operations of the proposed circuit through extensive numerical simulations.

APA, Harvard, Vancouver, ISO, and other styles

5

Hrámcov, István, Timotei István Erdei, Roland Décsei, and Géza Husi. "Design of Electron Tube and Semiconductor-Based and Voltage Stabilised Amplifier Circuits." Műszaki Tudományos Közlemények 13, no. 1 (2020): 81–85. http://dx.doi.org/10.33894/mtk-2020.13.13.

Full text

Abstract:

Abstract In this project, an electron tube circuit consisting of a voltage stabiliser, preamplifier, and final stage amplifier circuit was designed. One of the main aims was to reuse as many components and materials as possible, thereby decreasing the project’s ecological footprint. The result is a hybrid electron tube amplifier. The function of the circuits was subsequently measured and analysed using various tests.

APA, Harvard, Vancouver, ISO, and other styles

6

Snowden, Christopher M. "Modeling of Thermal Effects in Semiconductor Structures." VLSI Design 8, no. 1-4 (1998): 53–58. http://dx.doi.org/10.1155/1998/69743.

Full text

Abstract:

A fully coupled electro-thermal hydrodynamic model is described which is suitable for modelling active devices. The model is applied to the non-isothermal simulation of pseudomorphic high electron mobility transistors (pHEMTs). A large-scale surface temperature model is described which allows thermal modelling of semiconductor devices and monolithic circuits. An example of the application of thermal modelling to monolithic circuit characterization is given.

APA, Harvard, Vancouver, ISO, and other styles

7

Zhou, You Jie, Chun Hua Xiong, and Chang Bo Lu. "A Novel Comparator Circuit of Single-Electron and MOS Transistors." Applied Mechanics and Materials 120 (October 2011): 516–19. http://dx.doi.org/10.4028/www.scientific.net/amm.120.516.

Full text

Abstract:

A novel combination of single-electron transistors (SET) with MOS transistors is advanced to create inverter, which, compared with the pure SET circuit, is considerably augmented in its voltage gain and drive capability. Then a close analysis was conducted of the inverter, on the basis of which other logic gates were presented, thus achieving a circuit of two-bit digital comparator. The accuracy of the circuit is verified through the test on SPICE. This hybrid circuit shares the merits with both SET circuit and MOS circuit. Compared with the traditional circuits, this one uses fewer electronic

APA, Harvard, Vancouver, ISO, and other styles

8

Desplats, R., P. Perdu, B. Benteo, and A. Grang. "Electron Beam Testing of FPGA Circuits." Microelectronics Reliability 39, no. 6-7 (1999): 963–68. http://dx.doi.org/10.1016/s0026-2714(99)00131-6.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Kuwamura, Nobuhiro, Kenji Taniguchi, and Chihiro Hamaguchi. "Simulation of single-electron logic circuits." Electronics and Communications in Japan (Part II: Electronics) 77, no. 9 (1994): 65–73. http://dx.doi.org/10.1002/ecjb.4420770908.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Ancona, M. G. "Single-phase single-electron digital circuits." Journal of Applied Physics 81, no. 7 (1997): 3311–15. http://dx.doi.org/10.1063/1.364316.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Gerousis, C. P., and S. M. Goodnick. "Simulation of Single-Electron Tunneling Circuits." physica status solidi (b) 233, no. 1 (2002): 113–26. http://dx.doi.org/10.1002/1521-3951(200209)233:1<113::aid-pssb113>3.0.co;2-a.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Biswas, A. K. "Measuring of an unknown voltage by using single electron transistor based voltmeter." Semiconductor Physics, Quantum Electronics and Optoelectronics 24, no. 3 (2021): 277–87. http://dx.doi.org/10.15407/spqeo24.03.277.

Full text

Abstract:

In engineering and science, high operating speed, low power consumption, and high integration density equipment are financially indispensable. Single electron device (SED) is one such equipment. SEDs are capable of controlling the transport of only one electron through the tunneling transistor. It is single electron that is sufficient to store information in SED. Power consumed in the single electron circuit is very low in comparison with CMOS circuits. The processing speed of single electron transistor (SET) based device will be nearly close to electronic speed. SET attracts the researchers,

APA, Harvard, Vancouver, ISO, and other styles

13

Ercan, İlke, Zeynep Duygu Sütgöl, and Faik Ozan Özhan. "Physical Limitations on Fundamental Efficiency of SET-Based Brownian Circuits." Entropy 23, no. 4 (2021): 406. http://dx.doi.org/10.3390/e23040406.

Full text

Abstract:

Brownian circuits are based on a novel computing approach that exploits quantum fluctuations to increase the efficiency of information processing in nanoelectronic paradigms. This emerging architecture is based on Brownian cellular automata, where signals propagate randomly, driven by local transition rules, and can be made to be computationally universal. The design aims to efficiently and reliably perform primitive logic operations in the presence of noise and fluctuations; therefore, a Single Electron Transistor (SET) device is proposed to be the most appropriate technology-base to realize

APA, Harvard, Vancouver, ISO, and other styles

14

Sun, Cheng, Min Ju Ding, Yong Feng Zhang, et al. "Identification of Electrical Fire Melted Marks of Copper Wires by Electron Backscattered Diffraction (EBSD)." Applied Mechanics and Materials 513-517 (February 2014): 281–85. http://dx.doi.org/10.4028/www.scientific.net/amm.513-517.281.

Full text

Abstract:

A variety of electrical apparatus used in daily life can cause fires because of internal or external factors. During cause identification of an electrical fire, the first short circuit melted marks of copper wire have been considered highly important because they are direct proofs. Additionally, overloaded short circuit caused by the overload of current due to excessive electrical usage can give rise to an electrical fire. Despite extensive research on the first short circuit in fire scenes, the overloaded short circuit remains difficult to be distinguished because of the limitation of commonl

APA, Harvard, Vancouver, ISO, and other styles

15

Halbout, Jean-Marc, Paul May, and George Chiu. "Ultrashort Electron-pulse Probing of Integrated Circuits." Journal of Modern Optics 35, no. 12 (1988): 1995–2005. http://dx.doi.org/10.1080/713822322.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Hayashi, Shunsuke, and Takahide Oya. "Collision-Based Computing Using Single-Electron Circuits." Japanese Journal of Applied Physics 51 (June 20, 2012): 06FE11. http://dx.doi.org/10.1143/jjap.51.06fe11.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

Gerousis, C. P., S. M. Goodnick, and W. Porod. "Nanoelectronic single-electron transistor circuits and architectures." International Journal of Circuit Theory and Applications 32, no. 5 (2004): 323–38. http://dx.doi.org/10.1002/cta.284.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Agapakis, Christina M., and Pamela A. Silver. "Modular electron transfer circuits for synthetic biology." Bioengineered Bugs 1, no. 6 (2010): 413–18. http://dx.doi.org/10.4161/bbug.1.6.12462.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Hayashi, Shunsuke, and Takahide Oya. "Collision-Based Computing Using Single-Electron Circuits." Japanese Journal of Applied Physics 51, no. 6S (2012): 06FE11. http://dx.doi.org/10.7567/jjap.51.06fe11.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

Grabert, Hermann, Gert-Ludwig Ingold, Michel H. Devoret, Daniel Est�ve, Hugues Pothier, and Cristian Urbina. "Single electron tunneling rates in multijunction circuits." Zeitschrift f�r Physik B Condensed Matter 84, no. 1 (1991): 143–55. http://dx.doi.org/10.1007/bf01453767.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Rishton, S. A., D. P. Kern, E. Kratschmer та T. H. P. Chang. "Electron beam lithography of sub-0.1μm circuits". Microelectronic Engineering 9, № 1-4 (1989): 183–86. http://dx.doi.org/10.1016/0167-9317(89)90043-9.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

Rourk, Christopher, Yunbo Huang, Minjing Chen, and Cai Shen. "Indication of Strongly Correlated Electron Transport and Mott Insulator in Disordered Multilayer Ferritin Structures (DMFS)." Materials 14, no. 16 (2021): 4527. http://dx.doi.org/10.3390/ma14164527.

Full text

Abstract:

Electron tunneling in ferritin and between ferritin cores (a transition metal (iron) oxide storage protein) in disordered arrays has been extensively documented, but the electrical behavior of those structures in circuits with more than two electrodes has not been studied. Tests of devices using a layer-by-layer deposition process for forming multilayer arrays of ferritin that have been previously reported indicate that strongly correlated electron transport is occurring, consistent with models of electron transport in quantum dots. Strongly correlated electrons (electrons that engage in stron

APA, Harvard, Vancouver, ISO, and other styles

23

Mishra, Brijendra, Vivek Singh Kushwah, and Rishi Sharma. "MODELING OF HYBRID MOS FOR THE IMPLEMENTATION OF SWITCHED CAPACITOR FILTER USING SINGLE ELECTRON TRANSISTOR." International Journal of Engineering Technologies and Management Research 5, no. 2 (2020): 294–300. http://dx.doi.org/10.29121/ijetmr.v5.i2.2018.659.

Full text

Abstract:

In digital integrated circuit architectures, transistors serve as circuit switches to charge and discharge capacitors to the required logic voltage levels. A transistor is a three terminal semiconductor device used to amplify and switch electronic signals and electrical power. It has been observed that the Scaling down of electronic device sizes has been the fundamental strategy for improving the performance of ultra-large-scale integrated circuits (ULSIs). Metaloxide-semiconductor field-effect transistors (MOSFETs) have been the most prevalent electron devices for ULSI applications. A better

APA, Harvard, Vancouver, ISO, and other styles

24

Melnyk, Oleksandr, and Viktoriia Kozarevych. "SIMULATION OF PROGRAMMABLE SINGLE-ELECTRON NANOCIRCUITS." Bulletin of the National Technical University "KhPI". Series: Mathematical modeling in engineering and technologies, no. 1 (March 5, 2021): 64–68. http://dx.doi.org/10.20998/2222-0631.2020.01.05.

Full text

Abstract:

The speed and specializations of large-scale integrated circuits always contradict their versatility, which expands their range and causes the rise in price of electronic devices. It is possible to eliminate the contradictions between universality and specialization by developing programmable nanoelectronic devices, the algorithms of which are changed at the request of computer hardware developers, i.e. by creating arithmetic circuits with programmable characteristics. The development of issues of theory and practice of the majority principle is now an urgent problem, since the nanoelectronic

APA, Harvard, Vancouver, ISO, and other styles

25

Lu, Yu Dong, Xiao Qi He, Yun Fei En, Xin Wang, and Zhi Qiang Zhuang. "Failure of Flip-Chip Circuit Interconnects under High Current Density." Advanced Materials Research 118-120 (June 2010): 449–53. http://dx.doi.org/10.4028/www.scientific.net/amr.118-120.449.

Full text

Abstract:

Both Al interconnects and flip-chip solder bumps were sensitive to high current. The failure mechanism of circuits interconnects would be more complicated if the current density in circuits was exceed the critical magnitudes of electromigration in both Al interconnects and solder bumps. The failure of circuit interconnects under different magnitudes of current density was studied and the interaction of electromigration in solder bumps and Al interconnects was discussed. The circuit interconnects of flip chip show three failure phenomena under high current density: voids in Al final metal, inte

APA, Harvard, Vancouver, ISO, and other styles

26

ZHao, Hong-Quan, and Seiya Kasai. "WPG-Controlled Quantum BDD Circuits with BDD Architecture on GaAs-Based Hexagonal Nanowire Network Structure." Journal of Nanomaterials 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/726860.

Full text

Abstract:

One-dimensional nanowire quantum devices and basic quantum logic AND and OR unit on hexagonal nanowire units controlled by wrap gate (WPG) were designed and fabricated on GaAs-based one-dimensional electron gas (1-DEG) regular nanowire network with hexagonal topology. These basic quantum logic units worked correctly at 35 K, and clear quantum conductance was achieved on the node device, logic AND circuit unit, and logic OR circuit unit. Binary-decision-diagram- (BDD-) based arithmetic logic unit (ALU) is realized on GaAs-based regular nanowire network with hexagonal topology by the same fabric

APA, Harvard, Vancouver, ISO, and other styles

27

Kitchen, D. R., S. L. Linder, R. E. Omlor, and P. F. Lloyd. "Crystallographic orientation of aluminum whiskers formed by electromigration using transmission electron microscopy." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 370–71. http://dx.doi.org/10.1017/s0424820100126640.

Full text

Abstract:

Electromigration is a well known phenomenon in the aluminum films of an integrated circuit and occurs at elevated temperatures under the influence of current densities exceeding 10 amps/cm2. The failure modes are characteristically cracks, voids or hillocks in the metal lines, causing open-circuits. The majority of research in the electromigration of aluminum conductors examines the formation of these voids and hillocks in the linestripes. This is unfortunate since experiments have shown that short-circuits caused by whisker formation between adjacent stripes or between multi-level structures

APA, Harvard, Vancouver, ISO, and other styles

28

OYA, TAKAHIDE, ALEXANDRE SCHMID, TETSUYA ASAI, and AKIRA UTAGAWA. "STOCHASTIC RESONANCE IN A BALANCED PAIR OF SINGLE-ELECTRON BOXES." Fluctuation and Noise Letters 10, no. 03 (2011): 267–75. http://dx.doi.org/10.1142/s0219477511000557.

Full text

Abstract:

Stochastic resonance in a fundamental single-electron circuit, i.e., a balanced pair of single-electron boxes, is observed and presented theoretically, where the signal-to-noise ratio (SNR) of the internal states stimulated by responding to a periodic subthreshold or suprathreshold input is enhanced by thermal agitation in tunneling junctions. Through extensive Monte-Carlo simulations, the peak SNR was determined as a function of temperature and input amplitudes. These results imply the possibility to design single-electron circuits that may "exploit" thermal noise, instead of employing conven

APA, Harvard, Vancouver, ISO, and other styles

29

YANG, TAO, and LEON O. CHUA. "NONLINEAR DYNAMICS OF DRIVEN SINGLE-ELECTRON TUNNELING JUNCTIONS." International Journal of Bifurcation and Chaos 10, no. 05 (2000): 1091–113. http://dx.doi.org/10.1142/s0218127400000773.

Full text

Abstract:

In this paper we investigate the nonlinear dynamics of circuits made of single-electron tunneling junctions (SETJ) driven by a sinusoidal pump and biased by a DC voltage source. The mathematical model of an isolated SETJ circuit is a first-order nonautonomous impulsive differential equation. The tunneling effect of each SETJ can be realistically modeled by the impulsive effect of the junction voltage, which we choose to be the state variable of our circuit model. Based on this model we present theoretical results on the stability of the periodic and almost periodic solutions of driven SETJs. O

APA, Harvard, Vancouver, ISO, and other styles

30

Long, Keliu, and Xiaohong Zhang. "Memristive-synapse spiking neural networks based on single-electron transistors." Journal of Computational Electronics 19, no. 1 (2019): 435–50. http://dx.doi.org/10.1007/s10825-019-01437-w.

Full text

Abstract:

AbstractIn recent decades, with the rapid development of artificial intelligence technologies and bionic engineering, the spiking neural network (SNN), inspired by biological neural systems, has become one of the most promising research topics, enjoying numerous applications in various fields. Due to its complex structure, the simplification of SNN circuits requires serious consideration, along with their power consumption and space occupation. In this regard, the use of SSN circuits based on single-electron transistors (SETs) and modified memristor synapses is proposed herein. A prominent fea

APA, Harvard, Vancouver, ISO, and other styles

31

Smith, Cody D., Cameron A. Schmidt, Chien-Te Lin, Kelsey H. Fisher-Wellman, and P. Darrell Neufer. "Flux through mitochondrial redox circuits linked to nicotinamide nucleotide transhydrogenase generates counterbalance changes in energy expenditure." Journal of Biological Chemistry 295, no. 48 (2020): 16207–16. http://dx.doi.org/10.1074/jbc.ra120.013899.

Full text

Abstract:

Compensatory changes in energy expenditure occur in response to positive and negative energy balance, but the underlying mechanism remains unclear. Under low energy demand, the mitochondrial electron transport system is particularly sensitive to added energy supply (i.e. reductive stress), which exponentially increases the rate of H2O2 (JH2O2) production. H2O2 is reduced to H2O by electrons supplied by NADPH. NADP+ is reduced back to NADPH by activation of mitochondrial membrane potential–dependent nicotinamide nucleotide transhydrogenase (NNT). The coupling of reductive stress-induced JH2O2 p

APA, Harvard, Vancouver, ISO, and other styles

32

Pekola, J. P., and I. M. Khaymovich. "Thermodynamics in Single-Electron Circuits and Superconducting Qubits." Annual Review of Condensed Matter Physics 10, no. 1 (2019): 193–212. http://dx.doi.org/10.1146/annurev-conmatphys-033117-054120.

Full text

Abstract:

Classical and quantum electronic circuits provide ideal platforms to investigate stochastic thermodynamics, and they have served as a stepping stone to realize Maxwell's Demons with highly controllable protocols. In this article, we first review the central thermal phenomena in quantum nanostructures. Thermometry and basic refrigeration methods are described as enabling tools for thermodynamics experiments. Next, we discuss the role of information in thermodynamics that leads to the concept of Maxwell's Demon. Various Maxwell's Demons realized in single-electron circuits over the past couple o

APA, Harvard, Vancouver, ISO, and other styles

33

KIKOMBO, ANDREW KILINGA, TAKAHIDE OYA, TETSUYA ASAI, and YOSHIHITO AMEMIYA. "DISCRETE DYNAMICAL SYSTEMS CONSISTING OF SINGLE-ELECTRON CIRCUITS." International Journal of Bifurcation and Chaos 17, no. 10 (2007): 3613–17. http://dx.doi.org/10.1142/s0218127407019457.

Full text

Abstract:

The single-electron circuit in the nature of discrete dynamical systems because it changes its state discontinuously because of electron tunneling. To confirm this, we designed a sample circuit consisting of two single-electron oscillators coupled with each other through a coupling capacitor. The oscillators produce relaxation oscillation and interact with each other to generate synchronization and entrainment. The operation of the circuit is expressed with a set of discrete difference equations combined with continuous differential equations. Computer simulation shows that the circuit exhibit

APA, Harvard, Vancouver, ISO, and other styles

34

Knoll, M., and F. H. Uhlmann. "Design analysis of metallic single electron tunneling circuits." Applied Superconductivity 6, no. 10-12 (1999): 641–48. http://dx.doi.org/10.1016/s0964-1807(99)00023-x.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

COLLIN, J. P. "ELECTRON AND OPTICAL BEAM TESTING OF INTEGRATED CIRCUITS." Le Journal de Physique Colloques 50, no. C6 (1989): C6–129—C6–143. http://dx.doi.org/10.1051/jphyscol:1989611.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Russell, P. E., Z. J. Radzimski, D. A. Ricks, and J. P. Vitarelli. "Electron beam testing of multilevel metal integrated circuits." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 830–31. http://dx.doi.org/10.1017/s0424820100088464.

Full text

Abstract:

Fundamentally, voltage contrast is a well established technique for determination of voltages on metal surface which can be directly probed with an electron beam. However, actual integrated circuits (IC) consist of two or more conducting layers (metal and doped polysilicon) separated by dielectrics and covered by a dielectric passivation layer. Our work has addressed: i) the removal of dielectric layers (depassivation) by reactive ion etching (RIE) or selectively by focused ion beam etching to allow access to exposed metal lines; ii) modelling effort to understand how the materials and geometr

APA, Harvard, Vancouver, ISO, and other styles

37

Wu, Nan-Jian, Noboru Asahi, and Yoshihito Amemiya. "Cellular-Automaton Circuits Using Single-Electron-Tunneling Junctions." Japanese Journal of Applied Physics 36, Part 1, No. 5A (1997): 2621–27. http://dx.doi.org/10.1143/jjap.36.2621.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Yamada, Takashi, and Yoshihito Amemiya. "Multiple-valued logic devices using single-electron circuits." Superlattices and Microstructures 27, no. 5-6 (2000): 607–11. http://dx.doi.org/10.1006/spmi.2000.0875.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Ancona, M. G. "Design of computationally useful single‐electron digital circuits." Journal of Applied Physics 79, no. 1 (1996): 526–39. http://dx.doi.org/10.1063/1.360861.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Xiao, Ran, and Chunhong Chen. "Statistical Delay Modeling for Single-Electron-Based Circuits." IEEE Transactions on Nanotechnology 13, no. 4 (2014): 676–86. http://dx.doi.org/10.1109/tnano.2014.2315502.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Robinson, S. M. "CALCULATION METHODS FOR POWER CIRCUITS USING ELECTRON TUBES." Journal of the American Society for Naval Engineers 49, no. 3 (2009): 324–74. http://dx.doi.org/10.1111/j.1559-3584.1937.tb02582.x.

Full text

APA, Harvard, Vancouver, ISO, and other styles

42

Heiland, Robert, Fred Fox, and Siegfried Görlich. "Electron beam testing of wafer-scale integrated circuits." Microelectronic Engineering 12, no. 1-4 (1990): 259–66. http://dx.doi.org/10.1016/0167-9317(90)90040-z.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Ancona, M. G. "Systolic processor designs using single-electron digital circuits." Superlattices and Microstructures 20, no. 4 (1996): 461–72. http://dx.doi.org/10.1006/spmi.1996.0103.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Abdullah-Al-Shafi, Md, and Ali Newaz Bahar. "An Architecture of 2-Dimensional 4-Dot 2-Electron QCA Full Adder and Subtractor with Energy Dissipation Study." Active and Passive Electronic Components 2018 (September 24, 2018): 1–10. http://dx.doi.org/10.1155/2018/5062960.

Full text

Abstract:

Quantum-dot cellular automata (QCA) is the beginning of novel technology and is capable of an appropriate substitute for orthodox semiconductor transistor technology in the nanoscale extent. A competent adder and subtractor circuit can perform a substantial function in devising arithmetic circuits. The future age of digital techniques will exercise QCA as preferred nanotechnology. The QCA computational procedures will be simplified with an effective full adder and subtractor circuit. The deficiencies of variations and assembly still endure as a setback in QCA based outlines, and being capricio

APA, Harvard, Vancouver, ISO, and other styles

45

Khursheed, A. "High speed electron-beam testing of VLSI circuits by backscattered electron detection." Electronics Letters 26, no. 20 (1990): 1657. http://dx.doi.org/10.1049/el:19901061.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Yamada, S., T. Ito, K. Gouhara, and Y. Uchikawa. "Secondary Electron Counting Images in SEM." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 1 (1990): 402–3. http://dx.doi.org/10.1017/s0424820100180768.

Full text

Abstract:

The conventional method of image recording in scanning electron microscopy is photographic recording of the images displayed on a monitor screen of CRT installed with the SEM. An increasing number of works related to the development of computerized systems for digital recording and processing of the image data have been reported But a serious problem exists that the digiatal image data are acquired by discretizing the analogue output of the conventional detector system. In actuality, proportionality between the analogue output and the number of detected electrons is not ensured because of vari

APA, Harvard, Vancouver, ISO, and other styles

47

Nedobitkov, A. I. "On specific short circuit parameters of 12 vautomobile electric systems." Pozharovzryvobezopasnost/Fire and Explosion Safety 29, no. 6 (2021): 50–60. http://dx.doi.org/10.22227/pvb.2020.29.06.50-60.

Full text

Abstract:

Introduction. The data presented in the article show that the problem of differentiating primary and secondary short circuits is very important. The purpose of the article is to develop a scientifically grounded research method for copper conductors of automobile electric systems showing signs of a short circuit to identify the cause of its damage in a fire investigation. Materials and methods. The research was conducted with the help of JSM-6390LV scanning electron microscope having an energy dispersive microanalysis unit attached, DuraScan 20 microhardness tester, and Fluke Ti400 infrared th

APA, Harvard, Vancouver, ISO, and other styles

48

Guimarães, Janaina Gonçalves, and Beatriz De Oliveira Câmara. "Digital Circuits and Systems based on Single-Electron Tunneling Technology." Journal of Integrated Circuits and Systems 16, no. 1 (2021): 1–9. http://dx.doi.org/10.29292/jics.v16i1.475.

Full text

Abstract:

In this work, digital circuits and systems based on single-electron tunneling technology will be presented and analyzed. A simple design methodology will be proposed using a programmable single-electron NAND/NOR gate as a building block. Aspects such as operating temperature, noise, and charge fluctuations will be discussed. SET devices can reach ultra-low power consumption and high frequencies during operation. Although there are already many digital SET circuits and systems previously proposed and studied, there are few works about design methodology for SETs. This study shows a proposal for

APA, Harvard, Vancouver, ISO, and other styles

49

ISHIBASHI, T., Y. YAMAUCHI, E. SANO, H. NAKAJIMA, and Y. MATSUOKA. "BALLISTIC COLLECTION TRANSISTORS AND THEIR APPLICATIONS." International Journal of High Speed Electronics and Systems 05, no. 03 (1994): 349–79. http://dx.doi.org/10.1142/s0129156494000152.

Full text

Abstract:

We describe the design, fabrication and application of ballistic collection transistors (BCTs) in which electron velocity overshoot is introduced in the collector of a GaAs-based heterojunction bipolar transistor. The guideline for the BCT design is the effective confinement of electrons to the Γ-valley, as simulated by Monte Carlo analysis, and the control of electron energy is accomplished basically with an i-p+-n+ doping profile. Microwave characterization demonstrates the existence of significant overshoot and cutoff frequencies higher than 100 GHz at collector current densities in the mid

APA, Harvard, Vancouver, ISO, and other styles

50

Novosyadlyy, S. P., and A. M. Bosats'kyy. "Graded-Gap TechnologyFormattingof High-Speed GaAs – TransistorStructuresastheBasisforModern of Large Integrated Circuits." Фізика і хімія твердого тіла 16, no. 1 (2015): 221–29. http://dx.doi.org/10.15330/pcss.16.1.221-229.

Full text

Abstract:

Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons, decrease transit time and the transition to a ballistic work.Power consumption is reduced too. Formation of large integrated circuits structures onSi-homotransition reduces their frequency range and performance.Nowadaysproposed several new types of devices and technologies forming of large integrated circuits structures that based on high speeds and mobility of electrons in GaAs, and small size structures.These include, for example, the heterostructure field-effect transistors on a segmented

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!