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Dissertations / Theses on the topic 'Electron gas states'

Author: Grafiati

Published: 6 September 2023

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1

Yu, Wing Wa. "Low temperature spintronics : probing charge and spin states with two-dimensional electron gas." Thesis, University of British Columbia, 2009. http://hdl.handle.net/2429/12580.

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This thesis is based on two low temperature experiments in spintronics - physics and engineering of electronic spins. The measurements were performed on a GaAs/AlGaAs two-dimensional electron gas with geometries defined by tunable surface gates. The first experiment is about detection of electrons in a quantum dot. A quantum point contact (QPC) and a quantum wire (QW) is coupled to a single-lead few-electron quantum dot. By measuring the conductance of the QPC and the QW, one can gain information on the average number of electrons in the dot as well as energy-level structure of the dot. The se

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2

Yokota, Takeru. "Functional-renormalization-group aided density-functional theory - ab-inito description of ground and excited states of quantum many-body systems -." Kyoto University, 2019. http://hdl.handle.net/2433/242609.

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3

Wright, Timothy Grahame. "Studies of some gas-phase oxidation reactions using electron spectroscopy and the electronic structure of some small molecules." Thesis, University of Southampton, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358873.

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4

Ouali, Fatma Fouzia. "Phonon emission from a two dimensional electron gas." Thesis, University of Nottingham, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.293620.

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5

McFadden, C. "Electron transport in GaAs semiconductor devices." Thesis, University of Cambridge, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.332168.

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6

Gilbert, Timothy George. "Electronic states of ultrathin GaAs/AlAs superlattices." Thesis, University of Leicester, 1988. http://hdl.handle.net/2381/35893.

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The continuing refinement of crystal growth techniques has made possible the fabrication of semiconductor superlattices where the period can be as small as one lattice constant. Prediction of many of the properties of such systems requires a detailed description of their electronic structure. In this thesis, a self-consistent pseudopotential method which includes a parametrization scheme has been used to calculate the electronic properties of (GaAs)n(AlAs)n superlattices with n ranging from 1 to 4. The parametrization scheme is used to reproduce energy gaps at the principal symmetry points for

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7

Hedberg, James. "Low temperature force microscopy on a deeply embedded two dimensional electron gas." Thesis, McGill University, 2011. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=97016.

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Experimental physics in the low temperature limit has consistently produced major advances for condensed matter research. Likewise, scanning probe microscopy offers a unique view of the nanometer scale features that populate the quantum landscape. This work discusses the merger of the two disciplines via the development of the Ultra Low Temperature Scanning Probe Microscope, the ULT-SPM. We focus on the novel characterization of an exotic condensed matter system: a deeply buried two dimensional electron gas with a cleaved edge overgrowth geometry. By coupling the dynamics of the force sensing

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8

Woolfe, Adam. "Electronic transport through localised states in GaAs transistors." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.390216.

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9

Brummell, M. A. "High magnetic field studies of the two-dimensional electron gas formed in semiconductor heterostructures." Thesis, University of Oxford, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.355716.

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10

Ibraheim, K. S. "Angular and polarisation correlation measurements on the 2'1P and 3'1P states of helium." Thesis, University of Stirling, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.375414.

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11

Latt, Kyaw Zin. "Interactions of Two Dimensional Surface State Electron Gas with Zero, One and Two Dimensional Structures." Ohio University / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1383242271.

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12

Brown, Robert James. "Electronic transport in GaAs/AlGaAs microstructures." Thesis, University of Cambridge, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.335681.

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13

Wong, K. B. "Electronic properties of GaAs-GaAlAs superlattices." Thesis, University of Newcastle Upon Tyne, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.356158.

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14

Tanaka, Yasunori, Yasunobu Yokomizu, Motohiro Ishikawa, and Toshiro Matsumura. "Particle Composition of High-Pressure SF_6 Plasma with Electron Temperature Greater than Gas Temperature." IEEE, 1997. http://hdl.handle.net/2237/7280.

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15

Lovering, David James. "Time resolved optical spectroscopy of electronic states in GaAs quantum wells." Thesis, University of Exeter, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.305754.

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16

Zhang, Ningjiao. "Low Frequency Noise Characterization of AlGaN/GaN High Electron Mobility Transistors." The Ohio State University, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=osu1366369049.

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17

Huang, Ying. "Electronic states and optical properties of GaAs/AIGaAs and GaInP/AlGaInP quantum wells." Thesis, Click to view the E-thesis via HKUTO, 2004. http://sunzi.lib.hku.hk/hkuto/record/B31479820.

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18

Honda, S., H. Itoh, J. Inoue, et al. "Spin polarization control through resonant states in an Fe/GaAs Schottky barrier." American Physical Society, 2008. http://hdl.handle.net/2237/11246.

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19

Veal, Timothy David. "High resolution electron energy loss spectroscopy of narrow gap III V semiconductor surfaces and interfaces." Thesis, University of Warwick, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.252483.

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20

Humphreys, Richard David. "In-beam electron spectroscopy of Â²âµâ´No and Â²Â²â¶U in conjunction with a gas-filled recoil separator." Thesis, University of Liverpool, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.288233.

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21

Ciro, Guido. "TD-DFT and TD-DFT/PCM approaches to molecular electronic excited states in gas phase and in solution." Doctoral thesis, Scuola Normale Superiore, 2011. http://hdl.handle.net/11384/85797.

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22

Brannick, A. "Modelling of steady-state and transient effects in advanced AIGaN/GaN high electron mobility transistors." Thesis, University of Essex, 2010. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.528850.

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23

Blankenship, Thomas Keith. "Rapidity gap in the final state hadron distribution in deep inelastic electron scattering at HERA." Diss., This resource online, 1995. http://scholar.lib.vt.edu/theses/available/etd-06062008-170753/.

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24

Wen, Yuan. "Theoretical and experimental studies of electronic states in InAs/GaAs self-assembled quantum dots." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43224003.

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25

Choi, Hyun-jin. "Investigation of resonant Raman scattering in type II GaAs/A1As superlattices." Thesis, University of Oxford, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.365725.

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26

Mand, R. S. "Characterisation and applications of heterostructures : Characterisation of GaAs/GaAlAs heterostructures and GaAs/GaAlAs double heterostructure electronic and photonic switches." Thesis, University of Bradford, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.371479.

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27

North, Stephen Michael. "Electronic structure of GaSb/GaAs and Si/Ge quantum dots." Thesis, University of Newcastle Upon Tyne, 2001. http://hdl.handle.net/10443/551.

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There are significant differences between experiment and theoretical calculations of the electronic structure of GaSb/GaAs self-assembled quantum dots. Using a multi-band effective mass approximation it is shown that the influence of size and geometry of quantum dots has little or no effect in determining the hydrostatic strain. Furthermore, the valenceband ground state energies of the quantum dots studied are surprisingly consistent. This apparent paradox attributed to the influence of biaxial strain in shaping the heavy-hole and light-hole potentials. Consequently, it is shown that a simple,

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28

Moro, Alberto, and Laura Lonza. "Electricity carbon intensity in European Member States: Impacts on GHG emissions of electric vehicles." Elsevier, 2017. https://publish.fid-move.qucosa.de/id/qucosa%3A73241.

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The Well-To-Wheels (WTW) methodology is widely used for policy making in the transportation sector. In this paper updated WTW calculations are provided, relying on 2013 statistic data, for the carbon intensity (CI) of the European electricity mix; detail is provided for electricity consumed in each EU Member State (MS). An interesting aspect presented is the calculation of the GHG content of electricity traded between Countries, affecting the carbon intensity of the electricity consumed at national level. The amount and CI of imported electricity is a key aspect: a Country importing electricit

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29

Ding, Yi. "Quantum well state of cubic inclusions in hexagonal silicon carbide studied with ballistic electron emission microscopy." Columbus, Ohio : Ohio State University, 2004. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1086207334.

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Thesis (Ph. D.)--Ohio State University, 2004.<br>Title from first page of PDF file. Document formatted into pages; contains xv, 150 p.; also includes graphics (some col.). Includes abstract and vita. Advisor: Jonathan P. Pelz, Dept. of Physics. Includes bibliographical references (p. 144-150).

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30

Erslev, Peter Tweedie 1979. "The electronic structure within the mobility gap of transparent amorphous oxide semiconductors." Thesis, University of Oregon, 2010. http://hdl.handle.net/1794/10566.

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xix, 142 p. : ill. (some col.) A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number.<br>Transparent amorphous oxide semiconductors are a relatively new class of materials which show significant promise for electronic device applications. The electron mobility in these materials is at least ten times greater than that of the current dominant material for thin-film transistors: amorphous silicon. The density of states within the gap of a semiconductor largely determines the characteristics of a device fabricated from it.

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31

Zhang, Xin. "Electrochemical and structural investigations of a layered AU,PT-YSZ mixed potential gas sensing electrode." Doctoral thesis, Technische Universität Dresden, 2019. https://tud.qucosa.de/id/qucosa%3A36877.

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In recent developments of mixed potential gas sensors based on Yttrium Stabilized Zirconia (YSZ), the combination of Au/AuPt-admixtures and oxides was found to be promising electrode materials. With this material combination, satisfactory sensing characteristics were achieved, but the role of Au addition, especially its effect on the processes contributing to the mixed potential formation, has not yet been well understood. Deeper insights of the influence of Au on the electrochemical behaviors of this kind of electrodes are necessary for better understanding of the sensing behaviors and for ac

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32

Lowman, Jennifer Lee. "School principal's views of No Child Left Behind, the achievement gap, and the student groups assessed by NCLB." abstract and full text PDF (free order & download UNR users only), 2005. http://0-gateway.proquest.com.innopac.library.unr.edu/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:1433376.

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33

Liu, Shuhao. "Electronic Transport in Functional Materials and Two-Dimensional Hole System." Case Western Reserve University School of Graduate Studies / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=case1522893320666086.

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34

Gozcu, Ferhat Can. "Estimation Of Steady-state Temperature Distribution In Power Transformer By Using Finite Difference Method." Master's thesis, METU, 2010. http://etd.lib.metu.edu.tr/upload/3/12611592/index.pdf.

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Estimating the temperature distribution in transformer components in the design stage and during the operation is crucial since temperatures above the thermal limits of these components might seriously damage them. Thermal models are used to predict this vital information prior to actual operations. In this study, a two-dimensional, steady-state model based on the Finite Difference Method (FDM) is proposed to estimate the temperature distribution in the three-phase, SF6 gas insulatedcooled power transformer. The model can predict the temperature distribution at the specific discredited locatio

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35

Hadiya, Maheshkumar. "Case study of offshore wind farm integration to offshore oil and gas platforms as an isolated system - System Topologies, Steady State and Dynamic Aspects." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for elkraftteknikk, 2011. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-14148.

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The objective of this thesis work has been to investigate the electric system stability, reliability and power security of an off-grid isolated network system integration of an offshore wind farm to offshore oil and gas platforms via HVAC transmission, considering different network topologies for wind power penetration, network losses, application of FACTS devices and different system voltage levels. The system stability studies were performed by steady state and dynamic simulations, analysing different perturbation events in the system. The power system model under study was estab

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36

Cardwell, Drew. "Investigation of electrically-active defects in AlGaN/GaN high electron mobility transistors by spatially-resolved spectroscopic scanned probe techniques." The Ohio State University, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=osu1373894407.

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37

Balaguer, Ramírez María. "New solid state oxygen and hydrogen conducting materials. Towards their applications as high temperature electrochemical devices and gas separation membranes." Doctoral thesis, Universitat Politècnica de València, 2013. http://hdl.handle.net/10251/31654.

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Los materiales conductores mixtos de electrones e iones (oxígeno o protones) son capaces de separar oxígeno o hidrógeno de los gases de combustión o de corrientes de reformado a alta temperatura. La selectividad de este proceso es del 100%. Estos materiales, óxidos sólidos densos, pueden usarse en la producción de electricidad a partir de combustibles fósiles, así como formar parte de los procesos que forman parte del sistema de captura y almacenamiento de CO2. Las membranas de transporte de oxígeno (MTO) se pueden utilizar en las plantas energéticas con procesos de oxicombustión

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38

Binus, Joshua D. "Bonneville Power Administration and the Creation of the Pacific Intertie, 1958 -1964." PDXScholar, 2008. https://pdxscholar.library.pdx.edu/open_access_etds/1724.

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Construction of the Pacific Northwest-Pacific Southwest Intertie (also known as the Pacific Intertie) began in 1964, following the culmination of a series of interrelated negotiations which included: 1) the planning for the construction and operation of the Pacific Intertie; 2) the passage of federal legislation that put limits on the export of electricity from the regions where it was generated; and 3) the full ratification of the Columbia River Treaty between the United States and Canada. By 1970, with construction complete, the Pacific Intertie allowed for the movement of more than 4,000,00

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39

King, Graham Missell. "Structural, Magnetic, and Electronic Studies of Complex Perovskites." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1262114272.

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40

Goble, Nicholas James. "ELECTRONIC TRANSPORT AT SEMICONDUCTOR AND PEROVSKITE OXIDE INTERFACES." Case Western Reserve University School of Graduate Studies / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=case1454002713.

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41

Haidara, Modibo. "Impulsions de Trichel dans le cyclohexane liquide et les gaz comprimés." Grenoble 1, 1988. http://www.theses.fr/1988GRE10160.

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Resultats d'etude de la conduction electrique de liquides non polaires tres purs (cyclohexane, n-propane) en geometrie pointe-plan, en fonction du rayon de courbure de la pointe et de la pression hydrostatique (p<->10**(7)pa)

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42

Widdifield, Cory. "Multinuclear Solid-State Magnetic Resonance Studies on ‘Exotic’ Quadrupolar Nuclei: Acquisition Methods, High-Order Effects, Quantum Chemical Computations, and NMR Crystallography." Thèse, Université d'Ottawa / University of Ottawa, 2012. http://hdl.handle.net/10393/20722.

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This dissertation attempts to extend the classes of halogen-containing systems which may be studied using solid-state nuclear magnetic resonance (SSNMR). As line shape broadening due to the quadrupolar interaction (QI) scales inversely with the applied field, high-field magnet technology is indispensable for this research. Combining advanced radiofrequency pulse sequences with high-field wideline data acquisition allowed for the collection of very broad SSNMR signals of all quadrupolar halogen nuclei (i.e., 35/37Cl, 79/81Br and 127I) within a reasonable amount of experimental time. The init

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43

Gina, Ervin. "Implementation and Optimization of an Inverse Photoemission Spectroscopy Setup." Scholar Commons, 2012. http://scholarcommons.usf.edu/etd/4050.

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Inverse photoemission spectroscopy (IPES) is utilized for determining the unoccupied electron states of materials. It is a complementary technique to the widely used photoemission spectroscopy (PES) as it analyzes what PES cannot, the states above the Fermi energy. This method is essential to investigating the structure of a solid and its states. IPES has a broad range of uses and is only recently being utilized. This thesis describes the setup, calibration and operation of an IPES experiment. The IPES setup consists of an electron gun which emits electrons towards a sample, where photons are

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44

Teatro, Timothy A. V. "Dynamical effects in crystalline solid state systems: theory of temperature dependent optical response of bulk gaAs and vibrational modification of C(111) 2 x 1 Surface in Comparison to Experiment." Thesis, UOIT, 2009. http://hdl.handle.net/10155/33.

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This thesis presents a new theoretical formalism which incorporates dynamical effects in atomistic electronic structure and related calculations. This research, fundamental by nature, brings about a deeper understanding of the dynamical processes in a range of materials. This establishes technologically important correlation with experimentally measured macroscopic properties and materials characterization. This method—the first of its kind—is a natural and long overdue extension of customary adiabatically separated time-independent electronic structure methods. It accounts explicitly for atom

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45

M'AHAMEDI, OMAR. "Contribution a l'etude de l'interaction de l'hydrogene atomique avec les faces (110) et (100) de gaas et inp." Paris 6, 1987. http://www.theses.fr/1987PA066526.

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Etude de l'effet de l'adsorption de l'hydrogene, de l'unicite de la liaison forte que cet atome peut etablir avec les atomes de surface du substrat. Les spectres montrent qu'a forte dose d'hydrogene, il y a diminution du rendement de photoemission

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46

Sahli, Salah. "Etude du comportement electrique de films minces de gaas amorphes ou polycristallins elabores par depots en phase vapeur ou par plasma a partir d'organometalliques." Toulouse 3, 1986. http://www.theses.fr/1986TOU30049.

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Des films de gaas polycristallin ont ete realises par depot en phase vapeur, a partir de molecules organometalliques. L'auteur a montre que les proprietes electriques de ce materiau semiconducteur sont controlees par les joints de grains. Une densite d'etats de surface uniforme entre les grains a ete mise en evidence. L'introduction entre les grains d'une phase amorphe de type si::(y)c::(1-y) modifie le mode de conduction. La resistivite des films augmente ou diminue suivant la valeur de la concentration de si::(y)c::(1-y). Un depot par plasma froid a partir des memes molecules que celles util

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47

Mandray, Ariane. "Etude magnéto-optique de centres D- confinés dans des multi-puits quantiques GaAs/AlGaAs." Université Joseph Fourier (Grenoble), 1994. http://www.theses.fr/1994GRE10075.

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Le centre d#-, ou ion donneur negatif, est l'analogue en physique du solide de l'ion hydrogene negatif h#-. Il s'agit donc d'un systeme correle simple, avec seulement deux electrons. Les transitions magneto-optiques permettant l'etude des donneurs peu profonds (neutres ou charges negativement) dans les multi-puits gaas/algaas se situent dans la gamme de l'infra-rouge lointain. Notre appareillage experimental est essentiellement constitue d'un spectrometre a transformee de fourier, couple a un aimant supraconducteur ou resistif. Nous avons etudie le mecanisme de formation des centres d#- confin

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48

Chomette, André. "Proprietes electroniques et optiques des superreseaux gaas/gaalas de petites periodes." Paris 6, 1988. http://www.theses.fr/1988PA066146.

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49

GIGNOUX, CLAIRE. "Etude des proprietes electroniques de l'alliage quasicristallin alpdre." Université Joseph Fourier (Grenoble), 1996. http://www.theses.fr/1996GRE10233.

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Ce travail de these est consacre a l'elaboration et l'etude des proprietes electroniques de la phase quasicristalline alpdre. La recherche d'une procedure d'elaboration nous a permis d'obtenir des echantillons de phase icosaedrique pure de tres grande qualite structurale. L'alliage quasicristallin alpdre presente des proprietes de transport exceptionnelles pour un alliage constitue uniquement de metaux. En particulier, nous avons confirme que la valeur de resistivite de certains echantillons de i-alpdre peut atteindre #4#37 1 cm, ce qui est 10#6 fois superieure a celle des metaux standards, et

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50

Montpied, Sylvie. "Contribution a l'etude de la passivation de composants sur arseniure de gallium : caracterisation de films dielectriques realises par depot en phase vapeur assiste par plasma." Clermont-Ferrand 2, 1986. http://www.theses.fr/1986CLF21020.

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Les transistors a effet champ a contact metal-semiconducteur, non passives, realises sur arseniure de gallium sont sujet a une degradation progressive de leurs performances statiques et dynamiques aux hyperfrequences. Ce defaut de fonctionnement est en parti attribue aux surfaces d'arseniure de gallium situees de part et d'autres de la grille. La stabilisation des composants requiert donc de la passivation de ces zones grace a des materiaux de haute qualite dielectrique realisant une interface stable avec gaas. Dans cette optique, les proprietes physico-chimiques et electriques de films de sil

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