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Dissertations / Theses on the topic 'Electron gun'

Author: Grafiati

Published: 4 June 2021

Last updated: 30 July 2024

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1

Mann, Mark. "Carbon nanotubes as electron gun sources." Thesis, University of Cambridge, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.612202.

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2

Möller, K., A. Arnold, P. Lu, et al. "Emittance minimization at the ELBE superconducting electron gun." Forschungszentrum Dresden, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-146950.

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The transverse emittance is one of the most important quantities which characterize the quality of an electron source. For high quality experiments low beam emittance is required. By means of theoretical considerations and simulation calculations we have studied how the emittance of the Rossendorf superconducting radio-frequency photoelectron source (SRF gun) can be minimized. It turned out that neither a solenoid magnet nor the effect of space charge forces is needed to create a pronounced emittance minimum. The minimum appears by just adjusting the starting phase of the electron bunch with r

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3

Erasmus, Nicolas. "The development of an electron gun for performing ultrafast electron diffraction experiments." Thesis, Stellenbosch : Stellenbosch University, 2009. http://hdl.handle.net/10019.1/2560.

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Thesis (MSc (Physics))--Stellenbosch University, 2009.<br>ENGLISH ABSTRACT: This thesis aims to comprehensively discuss ultrafast electron di raction and its role in temporally resolving ultrafast dynamics on the molecular level. Theory on electron pulses and electron pulse propagation will be covered, but the main focus will be on the method, equipment and experimental setup required to generate sub-picosecond electron pulses, which are needed to perform time resolved experiments. The design and construction of an electron gun needed to produce the electron pulses will be shown in detai

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4

Ribton, Colin Nigel. "Development of an electron gun design optimisation methodology." Thesis, Brunel University, 2017. http://bura.brunel.ac.uk/handle/2438/15629.

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The design of high quality electron generators to meet specific requirements is important in the application of these devices to a variety of materials processing systems (including welding, cutting and additive manufacture), X-ray tubes for medical, scientific and industrial applications, microscopy and lithography. Designs can be analysed by field solvers, and electron trajectories plotted to provide an indication of the beam quality. Incremental improvement of designs has normally been executed by trial and error, and this can be a time consuming activity requiring expert intervention for e

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5

Cornell, Timothy Allen. "Fabrication of resonant optical waveguide biosensors using electron gun depositions." Morgantown, W. Va. : [West Virginia University Libraries], 2005. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=4272.

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Thesis (M.S.)--West Virginia University, 2005.<br>Title from document title page. Document formatted into pages; contains iv, 94 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 93-94).

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6

Trowbridge, Sarah Nicole. "The penning trap electron gun for the KATRIN experiment." Thesis, Massachusetts Institute of Technology, 2008. http://hdl.handle.net/1721.1/44827.

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Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Physics, 2008.<br>Includes bibliographical references (p. 61-62).<br>The KArlsruhe TRitium Neutrino experiment (KATRIN) is currently in under construction, with plans to be activated in 2010. The experiment will measure the energy of electrons recoiling from the three body beta decay of Tritium (Hydrogen with two neutrons) in order to obtain the mass of the neutrino. The experiment will be sensitive down to 0.2ev/c2. My thesis focuses on the one of the calibration sources for this experiment: the Penning trap electron gun. This cal

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7

Niles, Sean P. "Design and analysis of an electron gun/booster and free electron laser optical analysis." Thesis, Monterey, California. Naval Postgraduate School, 2010. http://hdl.handle.net/10945/10568.

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Approved for public release; distribution is unlimited<br>As interest in high power free electron lasers (FELs) has increased, the FEL and accelerator communities have been faced with the need to develop high bunch charge, high repetition rate, low emittance electron sources for use as the driving accelerators for FELs. A novel superconducting, radio-frequency (SRF) gun/booster has been designed by and built for the Naval Postgraduate School (NPS) FEL Beam Physics Lab in collaboration with Niowave, Inc., for studying this electron source regime. The NPS SRF gun/booster operates at 500 MH

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8

Nakanishi, Tsutomu, Shoji Okumi, Makoto Kuwahara, et al. "High-voltage testing of a 500-kV dc photocathode electron gun." American Institute of Physics, 2010. http://hdl.handle.net/2237/14188.

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9

Macke, Benjamin Tyler. "CHARACTERIZATION OF AN ELECTRON GUN CONTROLLED MULTIPLE SPATIAL REGION PIEZOELECTRIC THIN FILM." UKnowledge, 2003. http://uknowledge.uky.edu/gradschool_theses/312.

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Piezoelectric bimorph thin films may hold solutions for many future applications, such as lightweight deployable mirrors and inflatable struts. Non-contact actuation by an electron gun has shown promise in preventing issues that arise from attaching many wire leads to a thin film surface. This study investigates piezoelectric bimorph thin film response to electron gun actuation when covered with multiple spatial regions of control. Desired parameter ranges are found that will lead to predictable control under certain circumstances. Under such circumstances, film response is influenced almost s

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10

Poulin, Peter Roland. "Design of a photoactivated electron gun for the ultrafast study of chemical reaction dynamics by electron diffraction." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape10/PQDD_0005/MQ40734.pdf.

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11

Zen, Heishun. "Generation of high quality electron beam using a thermionic RF gun for mid-infrared free electron lasers." Kyoto University, 2009. http://hdl.handle.net/2433/126405.

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Kyoto University (京都大学)<br>0048<br>新制・課程博士<br>博士(エネルギー科学)<br>甲第14846号<br>エネ博第200号<br>新制||エネ||45(附属図書館)<br>27252<br>UT51-2009-F488<br>京都大学大学院エネルギー科学研究科エネルギー変換科学専攻<br>(主査)准教授増田開, 教授長﨑百伸, 教授大垣英明<br>学位規則第4条第1項該当

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12

Yamamoto, Naoto, M. Yamamoto, R. Sakai, et al. "Initial Emittance Measurements for Polarized Electron Gun with NEA-GaAs Type Photocathode." American Institite of Physics, 2007. http://hdl.handle.net/2237/11992.

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13

Li, Kevin Shing Bruce. "An ultra-low emittance electron gun for the PSI-XFEL : design and construction /." Zürich : ETH/ PSI, 2008. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=18168.

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14

Carriere, Paul. "Preliminary investigations into the evaporation process using a high brightness electron beam gun." Thesis, McGill University, 2014. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=123310.

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The high power density and net power achievable with axial electron beams make them an invaluable tool in the deposition of refractory coatings. Yet, the exact details of the coating process are often hidden behind proprietary techniques and technology. The work contained in this document involves the first examination of electron beam physical vapour deposition hardware fabricated by PAVAC Industries, Canada. The document traces the evaporation process from start to finish, examining the vacuum system, electron beam gun parameters, heat transfer and vapour transport. Experiments demonstratin

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15

Li, Fengping. "Design and operation of a harmonic gyrotron based on a cusp electron gun." Thesis, University of Strathclyde, 2010. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=17827.

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16

Del, Pozo Rodriguez Sofia. "Investigation and optimisation of a plasma cathode electron beam gun for material processing applications." Thesis, Brunel University, 2016. http://bura.brunel.ac.uk/handle/2438/13565.

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This thesis describes design, development and testing work on a plasma cathode electron beam gun as well as plasma diagnosis experiments and Electron Beam (EB) current measurements carried out with the aim of maximising the power of the EB extracted and optimising the electron beam gun system for material processing applications. The elements which influence EB gun design are described and put into practice in a thermionic EB gun case study. The relevant principles of plasma EB gun systems, such low-temperature, low-pressure, RF excitation, are described along with the test rigs developed to i

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17

Brown, Winthrop Joseph. "Low emittance electron beam production and characterization with a 17 GHz photocathode RF gun." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/8287.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 2001.<br>Includes bibliographical references (p. 199-208).<br>This thesis presents theoretical and experimental results of the production of very high brightness electron beams using a 17 GHz photocathode RF gun. A beam brightness of up to 8x 1013 A/([pi]m rad)2 was measured for a 1 MeV, 1 ps, 50 pC electron bunch. Such high brightness beams are critically important as injectors for linear accelerators and free electron lasers. The present experimental work represents the first complete characterization of an electron be

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18

Cevro, Mirza. "A study of the deposition of oxide thin films by ion beam techniques." Thesis, University of Salford, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.262666.

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19

Bormann, Reiner [Verfasser], Claus [Akademischer Betreuer] Ropers, and Markus [Akademischer Betreuer] Münzenberg. "Development and characterization of an electron gun for ultrafast electron microscopy / Reiner Bormann. Betreuer: Claus Ropers. Gutachter: Claus Ropers ; Markus Münzenberg." Göttingen : Niedersächsische Staats- und Universitätsbibliothek Göttingen, 2015. http://d-nb.info/1080609954/34.

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20

Bormann, Reiner Verfasser], Claus [Akademischer Betreuer] Ropers, and Markus [Akademischer Betreuer] [Münzenberg. "Development and characterization of an electron gun for ultrafast electron microscopy / Reiner Bormann. Betreuer: Claus Ropers. Gutachter: Claus Ropers ; Markus Münzenberg." Göttingen : Niedersächsische Staats- und Universitätsbibliothek Göttingen, 2015. http://nbn-resolving.de/urn:nbn:de:gbv:7-11858/00-1735-0000-0028-867D-4-8.

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21

Ayzatskiy, N., A. Dovbnya, V. Zakutin, et al. "Experimental investigation on the time characteristics of an electron beam formed in the magnetron gun with a secondari-emission cathode." Thesis, Национальный научный центр "Харьковский физико-технический институт" (ННЦ ХФТИ), 2007. http://openarchive.nure.ua/handle/document/9244.

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22

Torgasin, Konstantin. "Study on Methods for Performance Improvement of Thermionic RF Gun." Kyoto University, 2019. http://hdl.handle.net/2433/236633.

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23

Барсук, Іван Володимирович, Иван Владимирович Барсук, Ivan Volodymyrovych Barsuk та ін. "Расчет модуляционной характеристики трехэлектродной аксиально-симметричной электронной пушки ЛБВ". Thesis, Сумский государственный университет, 2013. http://essuir.sumdu.edu.ua/handle/123456789/43864.

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В данной работе предложена методика расчета модуляционной характеристики на примере электронной пушки в типичном трехэлектродном исполнении, что позволяет определять значения тока эмиссии катода в области отрицательных значений фокусирующего потенциала, а также запирающее напряжение без проведения эксперимента.

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24

Mertzig, Robert. "Modelling and design of high compression electron guns for EBIS/T charge breeders." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-216252.

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In der vorliegenden Arbeit wird die Optimierung des REXEBIS-Ladungsbrüters an der ISOLDE präsentiert. Die REXEBIS in der aktuellen Konfiguration erzeugt eine Elektronenstromdichte in der Fallenregion bei 2 T von 200A/cm² und wird bis zu ihren physikalischen Grenzen optimiert. Um diese Begrenzung zu überwinden wurde eine neue Elektronenkanone, die HEC²-Elektronenkanone, in Kooperation mit BNL konstruiert und an der TestEBIS in Betrieb genommen. Diese Elektronenkanone verspricht eine Elektronenstromdichte von mehr als 10 kA/cm² bei 5T, welche die Ladungsbrütungszeit entscheidend verkürzt. In die

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25

Roche, Michael E. "MODELING AND FABRICATION OF LIGHTWEIGHT, DEFORMABLE MIRRORS SUBJECTED TO DISCRETE LOADING." UKnowledge, 2001. http://uknowledge.uky.edu/gradschool_theses/302.

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The push towards larger diameter space telescope mirrors has caused the space industry to look at lightweight, deformable alternatives to the traditional monolithic mirror. One possible solution to the dilemma is to use the piezoelectric properties of certain materials to create a lightweight, deformable mirror. Current piezoelectric deformable mirror designs use individual actuators, creating an immensely complex system as the mirrors increase in size. The objective of this thesis is to aid in the design and development of lightweight, deformable mirrors for use in space based telescopes. Two

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26

Foret, Zdeněk. "Návrh koncepce a vývoj jednoúčelového rastrovacího elektronového mikroskopu." Doctoral thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2010. http://www.nusl.cz/ntk/nusl-233919.

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Electron microscopy has become an essential component in many scientific fields, in which it contributes to new discoveries. The microscopy itself is continually being developed and the limits, which seemed to be insurmountable, have been overcome. The instruments have become user friendlier and their mobility enables flexible practical use in the field. The subject of this work is the design of a scanning electron microscope, the calculation of a magnetic curcuit of an immersion objective combined with standard lens, the theoretical calculation of a microscope resolution and the design soluti

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27

Jánský, Pavel. "Coulombovské interakce v elektronových svazcích." Doctoral thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2010. http://www.nusl.cz/ntk/nusl-233908.

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The thesis deals with numerical simulations of a hairpin thermionic electron gun, an electron source of the electron-beam welding machine. Simulations showed that the space charge in the electron gun has a significant influence on the beam current and electron trajectories. Simulation outputs are in a sufficient agreement with the experimental measurements.

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28

Neves, Rafael Felipe Coelho. "“Caracterização de feixes eletrônicos monoenergéticos de baixas energias”." Universidade Federal de Juiz de Fora (UFJF), 2011. https://repositorio.ufjf.br/jspui/handle/ufjf/5360.

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Titberidze, Mikheil [Verfasser], and Florian [Akademischer Betreuer] Grüner. "Pilot Study of Synchronization on a Femtosecond Scale between the Electron Gun REGAE and a Laser-Plasma Accelerator / Mikheil Titberidze ; Betreuer: Florian Grüner." Hamburg : Staats- und Universitätsbibliothek Hamburg, 2017. http://d-nb.info/1143868749/34.

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Titberidze, M. [Verfasser], and Florian [Akademischer Betreuer] Grüner. "Pilot Study of Synchronization on a Femtosecond Scale between the Electron Gun REGAE and a Laser-Plasma Accelerator / Mikheil Titberidze ; Betreuer: Florian Grüner." Hamburg : Staats- und Universitätsbibliothek Hamburg, 2017. http://d-nb.info/1143868749/34.

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31

Liška, Ivo. "Coulomb Interactions in Electron Beams in the Vicinity of a Schottky and Cold Field Emission Sources." Doctoral thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2010. http://www.nusl.cz/ntk/nusl-233896.

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Dizertační práce se zabývá problematikou výpočtu vlivu coulombovských interakcí částic na parametry emitovaného elektronového svazku v blízkosti Schottkyho a studené katody. Práce poskytuje základní předhled o problematice, popisuje vytvořené modely emisních zdrojů a metodu simulace Monte Carlo. Představuje novou metodu generování vstupních dat, která klade větší důraz na přesnou simulaci emisního procesu. Pozornost je zde věnována zejména vlivu interakcí na energiovou šířku, velikost virtuálního zdroje a jas katody v závislosti na velikosti poloměru hrotu a emisním proudu. Sledováním vývoje e

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32

Storeck, Gero [Verfasser], Claus [Akademischer Betreuer] Ropers, Claus [Gutachter] Ropers, and Stefan [Gutachter] Mathias. "Non-equilibrium structural Dynamics of incommensurate Charge-Density Waves : Diffractive Probing with a micron-scale ultrafast Electron Gun / Gero Storeck ; Gutachter: Claus Ropers, Stefan Mathias ; Betreuer: Claus Ropers." Göttingen : Niedersächsische Staats- und Universitätsbibliothek Göttingen, 2020. http://d-nb.info/1213096286/34.

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33

Xavier, César Candido. "Desenvolvimento de ferramenta computacional para projeto de canhões de elétrons com grade e shadow-grid, PPM e coletores aplicados em válvulas de micro-ondas de potência e caracterização experimental." Universidade de São Paulo, 2010. http://www.teses.usp.br/teses/disponiveis/85/85134/tde-15092011-140900/.

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Neste trabalho analisa-se o problema do transporte do feixe de elétrons em canhões de elétrons, estruturas periódicas de ímãs permanentes e em coletores de simples e múltiplos estágios. Essa análise é de relevância em projetos de dispositivos de micro-ondas de potência dos tipos amplicador klystron e válvula TWT. Determina-se a dinâmica das partículas a partir da solução da equação da trajetória que é derivada da força de Lorentz e da conservação de energia. A equação da trajetória obtida é diferencial de segunda ordem, não-linear e independentemente do tempo para o potencial generalizado. Uti

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34

Brenac, Ariel. "Développements instrumentaux pour la photoémission inverse." Grenoble 1, 1987. http://www.theses.fr/1987GRE10010.

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Canon a electron fournissant un faisceau dans la gamme 5 ev-50 ev: resolution en vecteur d'onde de 0,2 a**(-1), courant maximal de 25 microamperes a 20 ev. Les spectres de photoemission inverse resolue angulairement presentent des effets angulaires a 30 ev. A 10 ev les effets angulaires devraient etre plus marques mais de faible rendement du spectrometre a cette energie rend les experiences difficiles. Caracterisation de nouvelles sources d'electrons: electrons emis par effet du champ par une cathode comprenant un grand nombre de micropointes. Ces cathodes fonctionnent a basse temperature. Des

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Zhao, Xu S. M. Massachusetts Institute of Technology. "Electric field engineering in GaN high electron mobility transistors." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/43062.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2008.<br>Includes bibliographical references (leaves 66-70).<br>In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase the frequency to mm-wave frequencies. The goal of this thesis has been to identify new solutions to some of the main challenges to increase this frequency performance even further. Electron velo

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Duque, Humberto Vargas. "Implantação de um analisador de baixas energias de elétrons com resolução angular em um espectrômetro de perda de energia de elétrons." Universidade Federal de Juiz de Fora (UFJF), 2012. https://repositorio.ufjf.br/jspui/handle/ufjf/6122.

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Stevens, Lorin E. "Thermo-Piezo-Electro-Mechanical Simulation of AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) High Electron Mobility Transistor." DigitalCommons@USU, 2013. http://digitalcommons.usu.edu/etd/1506.

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Due to the current public demand of faster, more powerful, and more reliable electronic devices, research is prolific these days in the area of high electron mobility transistor (HEMT) devices. This is because of their usefulness in RF (radio frequency) and microwave power amplifier applications including microwave vacuum tubes, cellular and personal communications services, and widespread broadband access. Although electrical transistor research has been ongoing since its inception in 1947, the transistor itself continues to evolve and improve much in part because of the many driven researche

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Mavroidis, Constantinos. "Electron transport in GaN epitaxial layers." Thesis, University College London (University of London), 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.407135.

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Francis, Smita. "Optimisation of doping profiles for mm-wave GaAs and GaN gunn diodes." Thesis, Cape Peninsula University of Technology, 2017. http://hdl.handle.net/20.500.11838/2568.

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Thesis (DTech (Electrical Engineering))--Cape Peninsula University of Technology, 2017.<br>Gunn diodes play a prominent role in the development of low-cost and reliable solid-state oscillators for diverse applications, such as in the military, security, automotive and consumer electronics industries. The primary focus of the research presented here is the optimisation of GaAs and GaN Gunn diodes for mm-wave operations, through rigorous Monte Carlo particle simulations. A novel, empirical technique to determine the upper operational frequency limit of devices based on the transferred elec

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40

Arabshahi, Hadi. "Simulations of electron transport in GaN devices." Thesis, Durham University, 2002. http://etheses.dur.ac.uk/4119/.

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This thesis deals with the development and application of Monte Carlo simulations to study electron transport in bulk GaN in the wurtzite crystal structure and the properties of field effect transistors made from the material. There is a particular emphasis on transport in the high electric field regime and transistors operating at high voltages. The simulation model includes five sets of non-parabolic conduction band valleys which can be occupied by electrons during high field transport. The effects on electron transport of impurities and the relevant phonon scattering mechanisms have been co

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Zhang, Yucheng. "Characterisation of GaN using transmission electron microscopy." Thesis, University of Cambridge, 2008. https://www.repository.cam.ac.uk/handle/1810/252119.

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42

Xia, Shanhong. "High brightness limited-area cathode electron guns." Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.321552.

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43

Moreke, Janina. "Reliability limitations due to high electric fields of AIGaN/GaN high electron mobility transistors and novel device designs." Thesis, University of Bristol, 2014. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.680374.

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This work investigates the impact of electronic trapping on AIGaN/GaN high electron mobility transistor (HEMT) degradation, particularly through the analysis of electric field strength in devices. The demand for ever increasing power capabilities in semiconductor microwave and power switching applications requires an understanding of the physics underlying degradation mechanisms within GaN-based HEMTs in order to be able to develop structures capable to exploit GaN's power capabilities. The investigation of high electric field induced mechanisms therefore contributes to research efforts to inc

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Lee, Kyoung-Keun. "Implementation of AlGaN/GaN based high electron mobility transistor on ferroelectric materials for multifunctional optoelectronic-acoustic-electronic applications." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28209.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: William. Alan Doolittle; Committee Member: Jeffrey Nause; Committee Member: Linda S. Milor; Committee Member: Shyh-Chiang Shen; Committee Member: Stephen E. Ralph.

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Brooks, Clive Raymond. "GaN microwave power FET nonlinear modelling techniques." Thesis, Stellenbosch : University of Stellenbosch, 2010. http://hdl.handle.net/10019.1/4306.

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Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2010.<br>ENGLISH ABSTRACT: The main focus of this thesis is to document the formulation, extraction and validation of nonlinear models for the on-wafer gallium nitride (GaN) high-electron mobility (HEMT) devices manufactured at the Interuniversity Microelectronics Centre (IMEC) in Leuven, Belgium. GaN semiconductor technology is fast emerging and it is expected that these devices will play an important role in RF and microwave power amplifier applications. One of the main advantages of the new GaN semicon

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Liu, Tian-Yu. "Transmission electron microscopy studies of GaN/[gamma]-LiAlO2 [GaN/gamma-LiAlO2] heterostructures." [S.l. : s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=975832999.

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Aminbeidokhti, Amirhossein. "Measurement and Analysis of Electron Mobility in GaN Power HEMTs." Thesis, Griffith University, 2016. http://hdl.handle.net/10072/368007.

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High-electron-mobility transistor (HEMT) is a promising device for power applications because of their high breakdown voltage, high electron mobility in two-dimensional electron gas (2DEG) area, fast switching capability, high-temperature operating capabilities, compatibility with standard electronic circuits, and low production cost. In contrast to the gate in metal–oxide–semiconductor field-effect transistor (MOSFET), which extends from source to drain, the gate in HEMT splits the device into two main sections: field-effect (section under the gate) and resistive (section outside the gate). R

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Ture, Erdin [Verfasser], and Oliver [Akademischer Betreuer] Ambacher. "GaN-based Tri-gate high electron mobility transistors." Freiburg : Universität, 2016. http://d-nb.info/1143602811/34.

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Eshghi, Hosein. "Electron and hole transport in GaN and InGaN." Thesis, University of Surrey, 2000. http://epubs.surrey.ac.uk/2237/.

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Joh, Jungwoo. "Degradation mechanisms of GaN high electron mobility transistors." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/38670.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007.<br>Includes bibliographical references (p. 83-85).<br>In spite of their extraordinary performance, GaN high electron mobility transistors (HEMT) have still limited reliability. In RF power applications, GaN HEMTs operate at high voltage where good reliability is essential. However, physical understanding of the fundamental reliability mechanisms of GaN HEMTs is still lacking today. In this thesis, we carry out systematic reliability experiments on industrial GaN HEMTs provided by o

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