Relevant bibliographies by topics / Electron microscopy transmission (TEM)

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Electron microscopy transmission (TEM)'

Author: Grafiati
Published: 4 June 2021
Last updated: 13 February 2022

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Journal articles on the topic "Electron microscopy transmission (TEM)"

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Winey, Mark, Janet B. Meehl, Eileen T. O'Toole, and Thomas H. Giddings. "Conventional transmission electron microscopy." Molecular Biology of the Cell 25, no. 3 (February 2014): 319–23. http://dx.doi.org/10.1091/mbc.e12-12-0863.

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Researchers have used transmission electron microscopy (TEM) to make contributions to cell biology for well over 50 years, and TEM continues to be an important technology in our field. We briefly present for the neophyte the components of a TEM-based study, beginning with sample preparation through imaging of the samples. We point out the limitations of TEM and issues to be considered during experimental design. Advanced electron microscopy techniques are listed as well. Finally, we point potential new users of TEM to resources to help launch their project.
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van der Krift, Theo, Ulrike Ziese, Willie Geerts, and Bram Koster. "Computer-Controlled Transmission Electron Microscopy: Automated Tomography." Microscopy and Microanalysis 7, S2 (August 2001): 968–69. http://dx.doi.org/10.1017/s1431927600030919.

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The integration of computers and transmission electron microscopes (TEM) in combination with the availability of computer networks evolves in various fields of computer-controlled electron microscopy. Three layers can be discriminated: control of electron-optical elements in the column, automation of specific microscope operation procedures and display of user interfaces. The first layer of development concerns the computer-control of the optical elements of the transmission electron microscope (TEM). Most of the TEM manufacturers have transformed their optical instruments into computer-controlled image capturing devices. Nowadays, the required controls for the currents through lenses and coils of the optical column can be accessed by computer software. The second layer of development is aimed toward further automation of instrument operation. For specific microscope applications, dedicated automated microscope-control procedures are carried out. in this paper, we will discuss our ongoing efforts on this second level towards fully automated electron tomography. The third layer of development concerns virtual- or telemicroscopy. Most telemicroscopy applications duplicate the computer-screen (with accessory controls) at the microscope-site to a computer-screen at another site. This approach allows sharing of equipment, monitoring of instruments by supervisors, as well as collaboration between experts at remote locations.Electron tomography is a three-dimensional (3D) imaging method with transmission electron microscopy (TEM) that provides high-resolution 3D images of structural arrangements. with electron tomography a series of images is acquired of a sample that is tilted over a large angular range (±70°) with small angular tilt increments.
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Ferreira, P. J., K. Mitsuishi, and E. A. Stach. "In Situ Transmission Electron Microscopy." MRS Bulletin 33, no. 2 (February 2008): 83–90. http://dx.doi.org/10.1557/mrs2008.20.

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AbstractThe articles in this issue of MRS Bulletin provide a sample of what is novel and unique in the field of in situ transmission electron microscopy (TEM). The advent of improved cameras and continued developments in electron optics and stage designs have enabled scientists and engineers to enhance the capabilities of previous TEM analyses. Currently, novel in situ experiments observe and record the behavior of materials in various heating, cooling, straining, or growth environments. In situ TEM techniques are invaluable for understanding and characterizing dynamic microstructural changes. They can validate static TEM experiments and inspire new experimental approaches and new theories.
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Hulskamp, M., B. Schwab, P. Grini, and H. Schwarz. "Transmission Electron Microscopy (TEM) of Plant Tissues." Cold Spring Harbor Protocols 2010, no. 7 (July 1, 2010): pdb.prot4958. http://dx.doi.org/10.1101/pdb.prot4958.

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Thomas, Edwin L. "Transmission electron microscopy of polymers." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 422–25. http://dx.doi.org/10.1017/s0424820100126901.

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Transmission electron microscopy continues to play a major role in micro-structural characterization of polymers. Additionally, as evidenced by the special symposium on electron crystallography at this EMSA meeting, electron diffraction, as applied to polymer crystals, is also a vigorous area of research. Because many of the interesting morphological features of polymer systems are at and below the micron scale, TEM is a most fruitful technique. Applications range from simple assessment of dispersed phase particle size in blends to HREM molecular imaging of defects in crystals. Thus polymer scientists probe structures over about 4 orders of magnitude in size, and the versatility of the TEM in such endeavors is evident from its essentially ubiquitous appearance in all modern physical sciences laboratories.While there are a host of standard and advanced texts on the application of TEM to metals and to biology, there are only a few review papers on polymer microscopy and one just-published book.
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Sun, Cheng, Erich Müller, Matthias Meffert, and Dagmar Gerthsen. "On the Progress of Scanning Transmission Electron Microscopy (STEM) Imaging in a Scanning Electron Microscope." Microscopy and Microanalysis 24, no. 2 (March 28, 2018): 99–106. http://dx.doi.org/10.1017/s1431927618000181.

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AbstractTransmission electron microscopy (TEM) with low-energy electrons has been recognized as an important addition to the family of electron microscopies as it may avoid knock-on damage and increase the contrast of weakly scattering objects. Scanning electron microscopes (SEMs) are well suited for low-energy electron microscopy with maximum electron energies of 30 keV, but they are mainly used for topography imaging of bulk samples. Implementation of a scanning transmission electron microscopy (STEM) detector and a charge-coupled-device camera for the acquisition of on-axis transmission electron diffraction (TED) patterns, in combination with recent resolution improvements, make SEMs highly interesting for structure analysis of some electron-transparent specimens which are traditionally investigated by TEM. A new aspect is correlative SEM, STEM, and TED imaging from the same specimen region in a SEM which leads to a wealth of information. Simultaneous image acquisition gives information on surface topography, inner structure including crystal defects and qualitative material contrast. Lattice-fringe resolution is obtained in bright-field STEM imaging. The benefits of correlative SEM/STEM/TED imaging in a SEM are exemplified by structure analyses from representative sample classes such as nanoparticulates and bulk materials.
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Saka, Hiroyasu, Takeo Kamino, Shigeo Ara, and Katsuhiro Sasaki. "In Situ Heating Transmission Electron Microscopy." MRS Bulletin 33, no. 2 (February 2008): 93–100. http://dx.doi.org/10.1557/mrs2008.21.

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AbstractTemperature is one of the most important factors affecting the state and behavior of materials. In situ heating transmission electron microscopy (TEM) is a powerful tool for understanding such temperature effects, and recently in situ heating TEM has made significant progress in terms of temperature available and resolution attained. This article briefly describes newly developed specimen-heating holders, which are useful in carrying out in situ heating TEM experiments. It then focuses on three main applications of these specimen holders: solid–solid reactions, solid–liquid reactions (including highresolution observation of a solid–liquid interface, size dependence of the melting temperatures of one-, two- and three-dimensionally reduced systems, size dependence of the contact angle of fine metal liquid, and wetting of Si with liquid Au or Al) and solid–gas reactions. These results illustrate the benefit of in situ heating TEM for providing fundamental information on temperature effects on materials.
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Lee, M. R. "Transmission electron microscopy (TEM) of Earth and planetary materials: A review." Mineralogical Magazine 74, no. 1 (February 2010): 1–27. http://dx.doi.org/10.1180/minmag.2010.074.1.1.

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AbstractUsing high intensity beams of fast electrons, the transmission electron microscope (TEM) and scanning transmission electron microscope (STEM) enable comprehensive characterization of rocks and minerals at micrometre to sub-nanometre scales. This review outlines the ways in which samples of Earth and planetary materials can be rendered sufficiently thin for TEM and STEM work, and highlights the significant advances in site-specific preparation enabled by the focused ion beam (FIB) technique. Descriptions of the various modes of TEM and STEM imaging, electron diffraction and X-ray and electron spectroscopy are outlined, with an emphasis on new technologies that are of particular relevance to geoscientists. These include atomic-resolution Z-contrast imaging by high-angle annular dark-field STEM, electron crystallography by precession electron diffraction, spectrum mapping using X-rays and electrons, chemical imaging by energy-filtered TEM and true atomic-resolution imaging with the new generation of aberration-corrected microscopes. Despite the sophistication of modern instruments, the spatial resolution of imaging, diffraction and X-ray and electron spectroscopy work on many natural materials is likely to remain limited by structural and chemical damage to the thin samples during TEM and STEM.
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Duan, J. Z., B. Thomas, A. Sidhwa, and S. Chopra. "Transmission Electron Microscopy of polysilicon microresistor." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 864–65. http://dx.doi.org/10.1017/s042482010017205x.

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The electrical properties of electronic materials are greatly affected by their microstructure, which in turn is determined by the processes used for fabrication. Transmission Electron Microscopy (TEM) is one of the most powerful analytical techniques to provide localized information about microstructure as it relates to process control parameters. This information is used for process development and failure diagnoses as well as QA/QC control. In this study, the microstructures within the devicesof polysilicon microresistors were analyzed using TEM to understand different resistances.The TEM samples were prepared from the devices to be analyzed by the mechanical polishing method using the tripod polisherTM. The selected area polishing technique was used to find the area of interest within one micron range. Figure 1 shows the specimen preparation process. The low and high magnification optical micrographs in Figures 1a and 1b indicate the region of interest within the die. Figure 1c is the optical image of the cross section along the line A-A in Figure lb.
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TAKAYANAGI, KUNIO, YOSHITAKA NAITOH, YOSHIFUMI OSHIMA, and MASANORI MITOME. "SURFACE TRANSMISSION ELECTRON MICROSCOPY ON STRUCTURES WITH TRUNCATION." Surface Review and Letters 04, no. 04 (August 1997): 687–94. http://dx.doi.org/10.1142/s0218625x97000687.

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Surface transmission electron microscopy (TEM) has been used to reveal surface steps and structures by bright and dark field imaging, and high resolution plan view and/or profile view imaging. Dynamic processes on surfaces, such as step motion, surface phase transitions and film growths, are visualized by a TV system attached to the electron microscope. Atom positions can precisely be detected by convergent beam illumination (CBI) of high resolution surface TEM. Imaging of the atomic positions of surfaces with truncation is briefly reviewed in this paper, with recent development of a TEM–STM (scanning tunneling microscope) system.
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Dissertations / Theses on the topic "Electron microscopy transmission (TEM)"

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TIYYAGURA, MADHAVI. "TRANSMISSION ELECTRON MICROSCOPY STUDIES IN SHAPE MEMORY ALLOYS." Master's thesis, University of Central Florida, 2005. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3913.

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In NiTi, a reversible thermoelastic martensitic transformation can be induced by temperature or stress between a cubic (B2) austenite phase and a monoclinic (B19') martensite phase. Ni-rich binary compositions are cubic at room temperature (requiring stress or cooling to transform to the monoclinic phase), while Ti-rich binary compositions are monoclinic at room temperature (requiring heating to transform to the cubic phase). The stress induced transformation results in the superelastic effect, while the thermally induced transformation is associated with strain recovery that results in the shape memory effect. Ternary elemental additions such as Fe can additionally introduce an intermediate rhombohedral (R) phase between the cubic and monoclinic phase transformation. This work was initiated with the broad objective of connecting the macroscopic behavior in shape memory alloys with microstructural observations from transmission electron microscopy (TEM). Specifically, the goals were to examine (i) the effect of mechanical cycling and plastic deformation in superelastic NiTi; (ii) the effect of thermal cycling during loading in shape memory NiTi; (iii) the distribution of twins in martensitic NiTi-TiC composites; and (iv) the R-phase in NiTiFe. Both in situ and ex situ lift out focused ion beam (FIB) and electropolishing techniques were employed to fabricate shape memory alloy samples for TEM characterization. The Ni rich NiTi samples were fully austenitic in the undeformed state. The introduction of plastic deformation (8% and 14% in the samples investigated) resulted in the stabilization of martensite in the unloaded state. An interlaying morphology of the austenite and martensite was observed and the martensite needles tended to orient themselves in preferred orientations. The aforementioned observations were more noticeable in mechanically cycled samples. The observed dislocations in mechanically cycled samples appear to be shielded from the external applied stress via mismatch accommodation since they are not associated with unrecoverable strain after a load-unload cycle. On application of stress, the austenite transforms to martensite and is expected to accommodate the stress and strain mismatch through preferential transformation, variant selection, reorientation and coalescence. The stabilized martensite (i.e., martensite that exists in the unloaded state) is expected to accommodate the mismatch through variant reorientation and coalescence. On thermally cycling a martensitic NiTi sample under load through the phase transformation, significant variant coalescence, variant reorientation and preferred variant selection was observed. This was attributed to the internal stresses generated as a result of the thermal cycling. A martensitic NiTi-TiC composite was also characterized and the interface between the matrix and the inclusion was free of twins while significant twins were observed at a distance away from the matrix-inclusion interface. Incorporating a cold stage, diffraction patterns from NiTiFe samples were obtained at temperatures as low as -160ºC. Overall, this work provided insight in to deformation phenomena in shape memory materials that have implications for engineering applications (e.g., cyclic performance of actuators, engineering life of superelastic components, stiffer shape memory composites and low-hysteresis R-phase based actuators). This work was supported in part by an NSF CAREER award (DMR 0239512).
M.S.M.E.
Department of Mechanical, Materials and Aerospace Engineering;
Engineering and Computer Science
Materials Science and Engineering
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Karlsson, Linda. "Transmission Electron Microscopy of 2D Materials : Structure and Surface Properties." Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-127526.

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During recent years, new types of materials have been discovered with unique properties. One family of such materials are two-dimensional materials, which include graphene and MXene. These materials are stronger, more flexible, and have higher conductivity than other materials. As such they are highly interesting for new applications, e.g. specialized in vivo drug delivery systems, hydrogen storage, or as replacements of common materials in e.g. batteries, bulletproof clothing, and sensors. The list of potential applications is long for these new materials. As these materials are almost entirely made up of surfaces, their properties are strongly influenced by interaction between their surfaces, as well as with molecules or adatoms attached to the surfaces (surface groups). This interaction can change the materials and their properties, and it is therefore imperative to understand the underlying mechanisms. Surface groups on two-dimensional materials can be studied by Transmission Electron Microscopy (TEM), where high energy electrons are transmitted through a sample and the resulting image is recorded. However, the high energy needed to get enough resolution to observe single atoms damages the sample and limits the type of materials which can be analyzed. Lowering the electron energy decreases the damage, but the image resolution at such conditions is severely limited by inherent imperfections (aberrations) in the TEM. During the last years, new TEM models have been developed which employ a low acceleration voltage together with aberration correction, enabling imaging at the atomic scale without damaging the samples. These aberration-corrected TEMs are important tools in understanding the structure and chemistry of two-dimensional materials. In this thesis the two-dimensional materials graphene and Ti3C2Tx MXene have been investigated by low-voltage, aberration-corrected (scanning) TEM. High temperature annealing of graphene covered by residues from the synthesis is studied, as well as the structure and surface groups on single and double Ti3C2Tx MXene. These results are important contributions to the understanding of this class of materials and how their properties can be controlled.
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Wan, Qian. "Transmission electron microscopy study of heterostructures grown on GaAs (110)." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2014. http://dx.doi.org/10.18452/16949.

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In der Arbeit werden die mikrostrukturellen Eigenschaften von an (110)-Flächen orientierten Heterostrukturen auf GaAs-Substraten mittels verschiedener Techniken der Transmissionselektronenmikroskopie untersucht. Kubisch flächenzentrierte (Al,Ga)As/AlAs/GaAs Mehrschichtstrukturen auf GaAs(110) weisen in orthogonalen Richtungen parallel zur Substratoberfläche verschiedene Mechanismen zur Aufnahme der Verspannungen aufgrund von Fehlanpassungen auf. Defektfreie Strukturen sind durch eine geeignete, kurz periodische AlAs/GaAs-Überstruktur erfolgreich realisiert worden. Abschließend sind künstliche Defekte per Nanoindentation in den defektfreien Proben erzeugt worden, um die Auswirkung kurzperiodischer Übergitter zu prüfen. Das System aus hexagonal dicht gepacktem MnAs auf GaAs(110) zeichnet sich durch anisotrope Gitterfehlanpassung von -7.5% und 0.7% entsprechend der [11-20] und der [0001] Richtungen aus. Eine Benetzungsschicht, die der Entstehung von Inseln vorausgeht, wird beobachtet, was das Stranski-Krastanov-Wachstum von MnAs belegt. Die Dehnung durch die Gitterfehlpassung von 0.7% wird elastisch eingebaut, während die Spannung durch die Gitterfehlanpassung in der senkrechten [11-20] Richtung durch die Entstehung einer periodischen Anordnung, vollständiger Gitterfehlanpassungsversetzungen abgebaut wird, die sich von der Grenzfläche entfernt im MnAs-Gitter befinden. Das aus der Versetzungsanordnung resultierende Dehnungsfeld ist auf eine Dicke von 3.4 nm um die Grenzfläche beschränkt. Eine atomare Struktur der Grenzfläche wird basierend auf dem Vergleich von HRTEM-Aufnahmen und Simulationen vorgeschlagen. CoAl-Legierungen in der B2-Phase sind zum Vergleich auf (001) und auf (110) orientierten GaAs-Substraten hergestellt worden. Beide Fälle weisen die Koexistenz der B2-Phase und der ungeordneten, kubisch raumzentrierten Variante auf. Die Unordnung wird teilweise durch die epitaktische Dehnung und teilweise durch Diffusion von Punktdefekten hervorgerufen.
In the work, we systematically investigate the microstructural properties of (110) oriented heterostructures on GaAs substrates by means of different transmission electron microscopy techniques. Fcc-type (Al,Ga)As/AlAs/GaAs multilayer structure on GaAs (110) presents different mismatch strain accommodation mechanisms along the perpendicular in-plane directions. Defect-free structures are successfully acquired by an appropriate type of AlAs/GaAs short period superlattice. Finally, artificial defects are intentionally produced by nano-indentation to the defect-free sample to verify the effect of short period superlattices. Hcp-type MnAs on GaAs (110) system is characterized by anisotropic lattice mismatches of -7.5% and 0.7% along the [11-20] and [0001] direction, respectively. A wetting layer is observed prior to the formation of islands, indicating a Stranski-Krastanov growth mode of MnAs. The strain corresponding to the 0.7% lattice misfit is accommodated elastically, whereas the mismatch stress along perpendicular [11-20] direction is relived by the formation of a periodic array of perfect misfit dislocations with a stand-off position in MnAs lattice. The long range strain field associated with the dislocation array is constrained at the interface within a thickness of about 3.4 nm. An interfacial atomic configuration is also proposed based on the comparison between HRTEM image and the simulations. B2-type CoAl alloys are realized on (001) and (110) oriented GaAs substrates for comparison. They are both characterized by a coexistence of B2 phase and its disordered version bcc phase. The disordering is induced partially by the epitaxial strain and partially by the diffusion of point defects.
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Cardoch, Sebastian. "Studying Atomic Vibrations by Transmission Electron Microscopy." Thesis, Uppsala universitet, Materialteori, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-305370.

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We employ the empirical potential function Airebo to computationally model free-standing Carbon-12 graphene in a classical setting. Our objective is to measure the mean square displacement (MSD) of atoms in the system for different average temperatures and Carbon-13 isotope concentrations. From results of the MSD we aim to develop a technique that employs Transmission Electron Microscopy (TEM), using high-angle annular dark filed (HAADF) detection, to obtain atomic-resolution images. From the thermally diffusive images, produced by the vibrations of atoms, we intent to resolve isotopes types in graphene. For this, we establish a relationship between the full width half maximum (FWHM) of real-space intensity images and MSD for temperature and isotope concentration changes. For the case of changes in the temperature of the system, simulation results show a linear relationship between the MSD as a function of increased temperature in the system, with a slope of 7.858×10-6 Å2/K. We also note a power dependency for the MSD in units of [Å2] with respect to the FWHM in units of [Å] given by FWHM(MSD)=0.20MSD0.53+0.67. For the case of increasing isotope concentration, no statistically significant changes to the MSD of 12C and 13C are noted for graphene systems with 2,000 atoms or more. We note that for the experimental replication of results, noticeable differences in the MSD for systems with approximately 320,000 atoms must be observable. For this, we conclude that isotopes in free-standing graphene cannot be distinguished using TEM.
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Agnese, Fabio. "Advanced transmission electron microscopy studies of semiconductor nanocrystals synthesized by colloidal methods." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAY043/document.

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Les recherches sur les nanocristaux semiconducteur (NCs) ont conduit à des résultats scientifiques fascinants, spécialement pour l'application en dispositifs optoelectroniques. Afin de répondre à certaines exigences comme des coûts mineurs, des gains d'efficacité, des composants respectueux de l'environnement, etc., des nouvelles méthodes sont explorées: dans les procédés en solution, dans l'ingénierie de bande et des niveaux d'énergie. En particulier, la méthode de synthèse peut influencer les propriétés optoélectroniques. Par conséquent, une meilleure compréhension des facteurs complexes pendant la synthèse entraînera une amélioration des performances.La microscopie électronique avancée fournit un moyen précis de recueillir des informations sur la morphologie, la structure cristalline et la composition chimique des matériaux avec une résolution spatiale au niveau atomique. La première partie de cette thèse traite de la synthèse et de la préparation des échantillons pour la microscopie électronique à transmission en haute résolution (HRTEM).La deuxième partie traite du mécanisme de croissance des NCs Cu2ZnSnS4 synthétisés par une méthode colloïdale. La morphologie et la stoechiométrie des intermédiaires de réaction extraits après différents intervalles de temps sont déterminés par HRTEM et analyse dispersive en énergie (EDS).Deux méthodes complémentaires, la diffraction par nanofaisceau d’électrons en précession (NPED) et la microscope électronique en transmission par balayage à haute résolution avec imagerie en champ sombre avec détecteur annulaire à grand angle (HRSTEM-HAADF) permettent une profonde caractérisation de la structure cristalline.En outre, la structure cristalline de NCs CsPbBr3 est résolue avec simulations de STEM-HAADF. Cet approche peut différencier entre structures cristallines cubiques et orthorhombiques, impossible avec techniques de diffraction traditionnelles. Enfin, l'influence des méthodes de synthèse sur la morphologie et sur la structure cristalline de NCs CuFeS2 pour applications dans le domaine de la thermoélectricité est analysée par HRTEM
The investigations of semiconductor nanocrystals (NCs) led to fascinating scientific results in optoelectronic devices. In order to fulfill certain requirements, i.e. cheaper costs, higher efficiencies, environmental friendly components etc., new methods are explored in solution-processing, band gap and energy level engineering. Particularly, the method of synthesis can alter the optoelectronic properties. Therefore, a better understanding of the intricate factors during synthesis will lead to improved performances. Advanced electron microscopy provides a precise way to gather information about morphology, crystal structure and chemical composition of materials with a spatial resolution down to the atomic level. The first part of this thesis deals with the optimization of the synthesis and sample preparation for high resolution transmission electron microscopy (HRTEM).The second part deals with the growth mechanism of Cu2ZnSnS4 NCs synthesized by a colloidal method. The morphology and stoichiometry of the samples extracted after different time intervals are characterized by HRTEM and electron dispersion spectroscopy (EDS). Two complementary methods, Nanobeam Precession Electron Diffraction (NPED) and High Resolution Scanning Transmission Electron Microscopy by High Angle Annular Dark-Field Imaging (HRSTEM-HAADF), provide an in-depth crystal structure characterization.Moreover, the crystal structure of CsPbBr3 NCs is solved by probing STEM-HAADF simulations. This approach is able to differentiate cubic and orthorhombic crystal structures, which is otherwise impossible by diffraction techniques. Finally, the influence of synthesis methods on the morphology and crystal structure of CuFeS2 NCs is investigated by HRTEM for thermoelectric applications
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Sharp, Joanne. "Electron tomography of defects." Thesis, University of Cambridge, 2010. https://www.repository.cam.ac.uk/handle/1810/228638.

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Tomography of crystal defects in the electron microscope was first attempted in 2005 by the author and colleagues. This thesis further develops the technique, using a variety of samples and methods. Use of a more optimised, commercial tomographic reconstruction program on the original GaN weak beam dark-field (WBDF) tilt series gave a finer reconstruction with lower background, line width 10-20 nm. Four WBDF tilt series were obtained of a microcrack surrounded by dislocations in a sample of indented silicon, tilt axes parallel to g = 220, 220, 400 and 040. Moiré fringes in the defect impaired alignment and reconstruction. The effect on reconstruction of moiré fringe motion with tilt was simulated, resulting in an array of rods, not a flat plane. Dislocations in a TiAl alloy were reconstructed from WBDF images with no thickness contours, giving an exceptionally clear reconstruction. The effect of misalignment of the tilt axis with systematic row g(ng) was assessed by simulating tilt series with diffraction condition variation across the tilt range of Δn = 0, 1 and 2. Misalignment changed the inclination of the reconstructed dislocation with the foil surfaces, and elongated the reconstruction in the foil normal direction; this may explain elongation additional to the missing wedge effect in experiments. Tomography from annular dark-field (ADF) STEM dislocation images was also attempted. A tilt series was obtained from the GaN sample; the reconstructed dislocations had a core of bright intensity of comparable width to WBDF reconstructions, with a surrounding region of low intensity to 60 nm width. An ADF STEM reconstruction was obtained from the Si sample at the same microcrack as for WBDF; here automatic specimen drift correction in tomography acquisition software succeeded, a significant improvement. The microcrack surfaces in Si reconstructed as faint planes and dislocations were recovered as less fragmented lines than from the WBDF reconstruction. ADF STEM tomography was also carried out on the TiAl sample, using a detector inner angle (βin) that included the first order Bragg spots (in other series βin had been 4-6θ B). Extinctions occurred which were dependent on tilt; this produced only weak lines in the reconstruction. Bragg scattering in the ADF STEM image was estimated by summing simulated dark-field dislocation images from all Bragg beams at a zone axis; a double line was produced. It was hypothised that choosing the inner detector angle to omit these first Bragg peaks may preclude most dynamical image features. Additional thermal diffuse scattering (TDS) intensity due to dilatation around an edge dislocation was estimated and found to be insignificant. The Huang scattering cross section was estimated and found to be 9Å, ten times thinner than experimental ADF STEM dislocation images. The remaining intensity may be from changes to TDS from Bloch wave transitions at the dislocation; assessing this as a function of tilt is for further work. On simple assessment, only three possible axial channeling orientations were found over the tilt range for GaN; if this is typical, dechanneling contrast probably does not apply to defect tomography.
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Lai, Pooi-fun. "TEM and structural investigations of synthesized and modified carbon materials /." Connect to thesis, 1999. http://eprints.unimelb.edu.au/archive/00000770.

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Caballero-Alias, Ana Maria. "The role of silica in mineralising tissues." Thesis, Nottingham Trent University, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.302515.

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Xin, Renlong. "TEM studies of calcium phosphates for the understanding of biomineralization /." View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?MECH%202006%20XIN.

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Vaughn, Joel M. "Manipulation Of Nanoscale Objects in the Transmission Electron Microscope." Ohio University / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1191525305.

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Books on the topic "Electron microscopy transmission (TEM)"

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Reimer, Ludwig. Transmission Electron Microscopy. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-662-14824-2.

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Reimer, Ludwig. Transmission Electron Microscopy. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-662-21556-2.

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Reimer, Ludwig. Transmission Electron Microscopy. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-662-21579-1.

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Carter, C. Barry, and David B. Williams, eds. Transmission Electron Microscopy. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-26651-0.

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Williams, David B., and C. Barry Carter. Transmission Electron Microscopy. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-0-387-76501-3.

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Williams, David B., and C. Barry Carter. Transmission Electron Microscopy. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4757-2519-3.

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Thomas, Jürgen, and Thomas Gemming. Analytical Transmission Electron Microscopy. Dordrecht: Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-017-8601-0.

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Zuo, Jian Min, and John C. H. Spence. Advanced Transmission Electron Microscopy. New York, NY: Springer New York, 2017. http://dx.doi.org/10.1007/978-1-4939-6607-3.

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Deepak, Francis Leonard, Alvaro Mayoral, and Raul Arenal, eds. Advanced Transmission Electron Microscopy. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-15177-9.

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Pennycook, Stephen J., and Peter D. Nellist, eds. Scanning Transmission Electron Microscopy. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-7200-2.

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Book chapters on the topic "Electron microscopy transmission (TEM)"

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Williams, David B., and C. Barry Carter. "Diffraction in TEM." In Transmission Electron Microscopy, 197–209. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-0-387-76501-3_11.

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Williams, David B., and C. Barry Carter. "High-Resolution TEM." In Transmission Electron Microscopy, 483–509. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-0-387-76501-3_28.

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Williams, David B., and C. Barry Carter. "High-Resolution TEM." In Transmission Electron Microscopy, 457–82. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4757-2519-3_28.

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Williams, David B., and C. Barry Carter. "Imaging in the TEM." In Transmission Electron Microscopy, 349–66. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4757-2519-3_22.

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Williams, David B., and C. Barry Carter. "The XEDS-TEM Interface." In Transmission Electron Microscopy, 573–85. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4757-2519-3_33.

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Costa, Pedro M. F. J., and Paulo J. Ferreira. "In Situ TEM of Carbon Nanotubes." In Advanced Transmission Electron Microscopy, 207–47. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-15177-9_7.

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Canepa, Silvia, Sardar Bilal Alam, Duc-The Ngo, Frances M. Ross, and Kristian Mølhave. "In Situ TEM Electrical Measurements." In Controlled Atmosphere Transmission Electron Microscopy, 281–300. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-22988-1_10.

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Arenal, Raul, and Odile Stephan. "Local TEM Spectroscopic Studies on Carbon- and Boron Nitride-Based Nanomaterials." In Advanced Transmission Electron Microscopy, 139–70. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-15177-9_5.

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Gooch, Jan W. "Transmission Electron Microscope (TEM)." In Encyclopedic Dictionary of Polymers, 929. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_15003.

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Su, Dong. "TEM Characterization of Metallic Nanocatalysts." In Transmission Electron Microscopy Characterization of Nanomaterials, 577–618. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-38934-4_12.

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Conference papers on the topic "Electron microscopy transmission (TEM)"

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Rout, Surya. "Transmission electron microscope (TEM) study of graphite and diamonds in ureilites." In European Microscopy Congress 2020. Royal Microscopical Society, 2021. http://dx.doi.org/10.22443/rms.emc2020.1154.

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Demarest, James J., and Hong-Ying Zhai. "Highly Automated Transmission Electron Microscopy Tomography for Defect Understanding." In ISTFA 2011. ASM International, 2011. http://dx.doi.org/10.31399/asm.cp.istfa2011p0137.

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Abstract Imaging tomography by transmission electron microscopy (TEM) is a technique which has been growing in popularity in recent years, yet it has not been widely applied to semiconductor defect studies and root cause determination [1- 3]. In part this is due to the complex equipment, computing needs, and microscope time required to generate the various images which ultimately compose the data set. However, the latest generation of TEMs—with their high level of stability and automation—are greatly reducing the resource needs to create high quality and informative movies of defects rotating about a central axis. One significant advance is the reduction in time required to fabricate a sample and perform the data acquisition by TEM. Today’s microscopes allow for sample fabrication to take place in a few hours or less and can acquire more than 100 images in about an hour at different sample tilt conditions with minimal analyst intervention. This paper describes using automated TEM sample preparation with dual beam focused ion beams (previously reported [4]) in conjunction with automated tomography software on a state-of-the-art TEM. By using an advanced tomography holder ±70° of tilt can be obtained. This is a powerful way to view defects as the failure can be viewed through more than 90° of rotation. Consequently a more complete understanding of the failure site can be obtained over a typical single projection TEM image. This can greatly facilitate root cause determination in a timely manner.
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Vanderlinde, William E. "STEM (Scanning Transmission Electron Microscopy) in a SEM (Scanning Electron Microscope) for Failure Analysis and Metrology." In ISTFA 2002. ASM International, 2002. http://dx.doi.org/10.31399/asm.cp.istfa2002p0077.

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Abstract Recent developments in transmission electron microscopy (TEM) sample preparation have greatly reduced the time and cost for preparing thin samples. In this paper, a method is demonstrated for viewing thin samples in transmission in an unmodified scanning electron microscope (SEM) using an easily constructed sample holder. Although not a substitute for true TEM analysis, this method allows for spatial resolution that is superior to typical SEM imaging and provides image contrast from material structure that is typical of TEM images. Furthermore, the method can produce extremely high resolution x-ray maps that are typically produced only by scanning transmission electron microscope (STEM) systems.
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DaPonte, J., T. Sadowski, C. C. Broadbridge, D. Day, A. H. Lehman, D. Krishna, L. Marinella, P. Munhutu, and M. Sawicki. "Application of particle analysis to transmission electron microscopy (TEM)." In Defense and Security Symposium, edited by Zia-ur Rahman, Stephen E. Reichenbach, and Mark A. Neifeld. SPIE, 2007. http://dx.doi.org/10.1117/12.714749.

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Cao, Y., S. Zhu, Y. Xie, J. Key, J. Kacher, R. R. Unocic, and C. M. Rouleau. "Sequential Adaptive Detection for In-Situ Transmission Electron Microscopy (TEM)." In ICASSP 2018 - 2018 IEEE International Conference on Acoustics, Speech and Signal Processing (ICASSP). IEEE, 2018. http://dx.doi.org/10.1109/icassp.2018.8461334.

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Kushwaha, Himmat S., Sanju Tanwar, K. S. Rathore, and Sumit Srivastava. "De-noising Filters for TEM (Transmission Electron Microscopy) Image of Nanomaterials." In Communication Technologies (ACCT). IEEE, 2012. http://dx.doi.org/10.1109/acct.2012.41.

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Demarest, James, Chris Deeb, Thomas Murray, and Hong-Ying Zhai. "Energy-Dispersive X-ray Spectrometry Performance on Multiple Transmission Electron Microscope Platforms." In ISTFA 2010. ASM International, 2010. http://dx.doi.org/10.31399/asm.cp.istfa2010p0301.

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Abstract Energy-dispersive X-ray spectrometry (EDS) is a key analytical tool aiding root cause determination in the failure analysis (FA) process. This paper looks at a number of analytical TEM microscopes currently in use in various facilities: microscope A, a STEM operated at 200kV; microscope B, a 300kV TEM; and microscopes C and D, both 200kV TEMs. EDS counts per unit time from multiple microscope platforms were examined. Microscope D demonstrated two orders of magnitude higher counts per unit time than the other three microscopes. Microscope D represents the state-of-the-art EDS analytical TEM configuration and has achieved this through a novel windowless EDS configuration which significantly increases the detector area (by about a factor of three) that receives X-rays generated from the sample.
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Sung, Ching Shan, Hsiu Ting Lee, and Jian Shing Luo. "TEM Sample Preparation Tricks for Advanced DRAMs." In ISTFA 2015. ASM International, 2015. http://dx.doi.org/10.31399/asm.cp.istfa2015p0318.

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Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.
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Fu, L. F., Y. C. Wang, B. Jiang, F. Shen, M. Strauss, B. Van Leer, C. Senowitz, and A. Buxbaum. "Recent Developments in TEM Applications for the IC Industry." In ISTFA 2008. ASM International, 2008. http://dx.doi.org/10.31399/asm.cp.istfa2008p0014.

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Abstract Recent developments in aberration-corrected transmission electron microscopy have drawn much attention from the semiconductor characterization community. Two new developments in transmission electron microscopy, image aberration correctors and probe aberration correctors, are discussed in term of their applications in characterizing gate oxide dielectrics for the IC industry.
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Wang, Yafei, Songyan Hu, Guangxu Cheng, Zaoxiao Zhang, and Jianxiao Zhang. "Influence of Quenching-Tempering on the Carbide Precipitation of 2.25Cr-1Mo-0.25V Steel Used in Reactor Pressure Vessels." In ASME 2019 Pressure Vessels & Piping Conference. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/pvp2019-93054.

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Abstract The carbide precipitation of 2.25Cr-1Mo-0.25V steel is studied during the head-fabrication heat treatment process using gold replica technique, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). Shapes, structures and sizes of carbides before and after heat treatment are analyzed. The dissolution of strip-shaped carbides and the precipitation of granular carbides are confirmed. Amorphous films at the boundaries of carbides are observed by high-resolution transmission electron microscope (HRTEM), which is formed due to the electron irradiation under TEM.
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Reports on the topic "Electron microscopy transmission (TEM)"

1

Pennycook, S. J., and A. R. Lupini. Image Resolution in Scanning Transmission Electron Microscopy. Office of Scientific and Technical Information (OSTI), June 2008. http://dx.doi.org/10.2172/939888.

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Reed, B., M. Armstrong, K. Blobaum, N. Browning, A. Burnham, G. Campbell, R. Gee, et al. Time Resolved Phase Transitions via Dynamic Transmission Electron Microscopy. Office of Scientific and Technical Information (OSTI), February 2007. http://dx.doi.org/10.2172/902321.

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Dietz, N. L. Transmission electron microscopy analysis of corroded metal waste forms. Office of Scientific and Technical Information (OSTI), April 2005. http://dx.doi.org/10.2172/861616.

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Tosten, M. H. Transmission electron microscopy of Al-Li control rod pins. Office of Scientific and Technical Information (OSTI), September 1992. http://dx.doi.org/10.2172/10170120.

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Tosten, M. H. Transmission electron microscopy of Al-Li control rod pins. Office of Scientific and Technical Information (OSTI), September 1992. http://dx.doi.org/10.2172/6282616.

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Isaacs, H. S., Y. Zhu, R. L. Sabatini, and M. P. Ryan. Transmission electron microscopy of undermined passive films on stainless steel. Office of Scientific and Technical Information (OSTI), June 1999. http://dx.doi.org/10.2172/353181.

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TOSTEN, MICHAEL. Transmission Electron Microscopy Study of Helium-Bearing Fusion Welds(U). Office of Scientific and Technical Information (OSTI), November 2005. http://dx.doi.org/10.2172/882713.

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Scott, Keana C., and Lucille A. Giannuzzi. Strategies for transmission electron microscopy specimen preparation of polymer composites. National Institute of Standards and Technology, September 2015. http://dx.doi.org/10.6028/nist.sp.1200-16.

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Watt, John Daniel. Soft matter and nanomaterials characterization by cryogenic transmission electron microscopy. Office of Scientific and Technical Information (OSTI), January 2020. http://dx.doi.org/10.2172/1593111.

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Batra, Ravi. Transmission Electron Microscopy of Rapidly Solidified Du-5% W Alloy. Fort Belvoir, VA: Defense Technical Information Center, January 1991. http://dx.doi.org/10.21236/ada231449.

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