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Relevant bibliographies by topics / Electronic Circuits and Devices

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Academic literature on the topic 'Electronic Circuits and Devices'

Author: Grafiati

Published: 4 June 2021

Last updated: 31 January 2023

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Journal articles on the topic "Electronic Circuits and Devices"

1

Stavrinidou, Eleni, Roger Gabrielsson, Eliot Gomez, Xavier Crispin, Ove Nilsson, Daniel T. Simon, and Magnus Berggren. "Electronic plants." Science Advances 1, no. 10 (November 2015): e1501136. http://dx.doi.org/10.1126/sciadv.1501136.

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The roots, stems, leaves, and vascular circuitry of higher plants are responsible for conveying the chemical signals that regulate growth and functions. From a certain perspective, these features are analogous to the contacts, interconnections, devices, and wires of discrete and integrated electronic circuits. Although many attempts have been made to augment plant function with electroactive materials, plants’ “circuitry” has never been directly merged with electronics. We report analog and digital organic electronic circuits and devices manufactured in living plants. The four key components of a circuit have been achieved using the xylem, leaves, veins, and signals of the plant as the template and integral part of the circuit elements and functions. With integrated and distributed electronics in plants, one can envisage a range of applications including precision recording and regulation of physiology, energy harvesting from photosynthesis, and alternatives to genetic modification for plant optimization.

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Kostin, M. S., D. S. Vorunichev, and D. A. Korzh. "COUNTERREENGINEERING OF ELECTRONIC DEVICES." Russian Technological Journal 7, no. 1 (February 28, 2019): 57–79. http://dx.doi.org/10.32362/2500-316x-2019-7-1-57-79.

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The paper presents the main results of scientific and practical research in the field of special design reengineering and counterreengineering of radioelectronic devices. Methods and means of special design reengineering of functional modules of multilayer printed circuit boards and case microcircuits are presented. The basic process design for the reengineering of multilayer printed circuits of radioelectronic products is presented. The design is based on the physical principles of destructive and non-destructive decomposing test: mechanical processing and chemical etching, stereolaser structuring, IR imaging electrothermics and X-ray analysis. The article formulates positions and methodology of the circuit analysis of the basic architecture of electrical circuits and signal processes of radio electronic products by the configuration of the printed circuit, its electronic component base and their connected topologies. The article considers methods and techniques for the reengineering of radiotechnical circuits and signals enabling to reproduce the list of the electronic component base and the essential circuit technique, as well as to study the basic circuit characteristics of the appliance in four main modes: functional, in-circuit, peripheral and identification visualization. The methods and means of authentic performance of radioelectronic devices for a number of constructive and radiotechnical identifiers are considered. Technical methods and solutions for counterreengineering of radioelectronic devices have been developed.

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Kaur, Inderpreet, Shriniwas Yadav, Sukhbir Singh, Vanish Kumar, Shweta Arora, and Deepika Bhatnagar. "Nano Electronics: A New Era of Devices." Solid State Phenomena 222 (November 2014): 99–116. http://dx.doi.org/10.4028/www.scientific.net/ssp.222.99.

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The technical and economic growth of the twentieth century was marked by evolution of electronic devices and gadgets. The day-to-day lifestyle has been significantly affected by the advancement in communication systems, information systems and consumer electronics. The lifeline of progress has been the invention of the transistor and its dynamic up-gradation. Discovery of fabricating Integrated Circuits (IC’s) revolutionized the concept of electronic circuits. With advent of time the size of components decreased, which led to increase in component density. This trend of decreasing device size and denser integrated circuits is being limited by the current lithography techniques. Non-uniformity of doping, quantum mechanical tunneling of electrons from source to drain and leakage of electrons through gate oxide limit scaling down of devices. Heat dissipation and capacitive coupling between circuit components becomes significant with decreasing size of the components. Along with the intrinsic technical limitations, downscaling of devices to nanometer sizes leads to a change in the physical mechanisms controlling the charge propagation. To deal with this constraint, the search is on to look around for alternative materials for electronic device application and new methods for electronic device fabrication. Such material is comprised of organic molecules, proteins, carbon materials, DNA and the list is endless which can be grown in the laboratory. Many molecules show interesting electronic properties, which make them probable candidates for electronic device applications. The challenge is to interpret their electronic properties at nanoscale so as to exploit them for use in new generation electronic devices. Need to trim downsize and have a higher component density have ushered us into an era of nanoelectronics.

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Darwish, Mahmoud, Péter Neumann, János Mizsei, and László Pohl. "Electro-Thermal Simulation of Vertical VO2 Thermal-Electronic Circuit Elements." Energies 13, no. 13 (July 3, 2020): 3447. http://dx.doi.org/10.3390/en13133447.

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Advancement of classical silicon-based circuit technology is approaching maturity and saturation. The worldwide research is now focusing wide range of potential technologies for the “More than Moore” era. One of these technologies is thermal-electronic logic circuits based on the semiconductor-to-metal phase transition of vanadium dioxide, a possible future logic circuits to replace the conventional circuits. In thermal-electronic circuits, information flows in a combination of thermal and electronic signals. Design of these circuits will be possible once appropriate device models become available. Characteristics of vanadium dioxide are under research by preparing structures in laboratory and their validation by simulation models. Modeling and simulation of these devices is challenging due to several nonlinearities, discussed in this article. Introduction of custom finite volumes method simulator has however improved handling of special properties of vanadium dioxide. This paper presents modeling and electro-thermal simulation of vertically structured devices of different dimensions, 10 nm to 300 nm layer thicknesses and 200 nm to 30 μm radii. Results of this research will facilitate determination of sample sizes in the next phase of device modeling.

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Jones, Andrew, and Vinod Sikka. "Superhydrophobic Coatings on Electronic Components." International Symposium on Microelectronics 2011, no. 1 (January 1, 2011): 000113–16. http://dx.doi.org/10.4071/isom-2011-ta3-paper6.

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Superhydrophobic coatings provide exceptional protection to electrical circuits, switches, and other electrical devices which operate in wet environments, such as food processing plants or outdoor applications. Among various electrical device applications, electric motors and electrical switches have been successfully tested in the field at two food processors for nearly 20 months with exceptionally good results. Coated microelectronic circuit board has been in operation without any incidence for over 1 year.

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BENFDILA, A., S. ABBAS, R. IZQUIERDO, R. TALMAT, and A. VASEASHTA. "ON THE DRAIN CURRENT SATURATION IN CARBON NANOTUBE FIELD EFFECT TRANSISTORS." Nano 05, no. 03 (June 2010): 161–65. http://dx.doi.org/10.1142/s1793292010002062.

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Electronic devices based on carbon nanotubes (CNTs) show potential for circuit miniaturization due to their superior electrical characteristics and reduced dimensionality. The CNT field effect transistors (CNFETs) offer breakthrough in miniaturization of various electronic circuits. Investigation of ballistic transport governing the operation of CNFETs is essential for understanding the device's functional behavior. This investigation is focused on a study of current–voltage characteristics of device behavior in hard saturation region. The investigation utilizes a set of current–voltage characteristics obtained on typical devices. This work is an extension of our earlier work describing application of our approach to Si -MOSFET behavior in the saturation region.

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Kim, TaeWoong, and SoYoung Kim. "Electronic design automation requirements for R2R printing foundry." Flexible and Printed Electronics 7, no. 1 (February 4, 2022): 013001. http://dx.doi.org/10.1088/2058-8585/ac4d3d.

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Abstract Roll-to-roll (R2R) printed electronic devices have been in the spotlight over the decades as a potential replacement for Si-based semiconductors, research into this technology is still being actively conducted over the world. These printed electronic devices can be used in a variety of applications, so the demand for them is expected to reach over USD 20.7 billion in 2025 given a compound annual growth rate (CAGR) of 21.5%. As the new ink materials and printing technologies being researched are commercialized, foundry companies that produce printed electronics need to provide appropriate work flow that will allow engineers to design these kind of circuits using commercial electronic design automation (EDA) tools. This review paper describes the key parameters that should be found process design kit (PDK), including the contained design rules and the simulation program with integrated circuit emphasis model. We cover the factors that need to be considered when a fabless company develops circuits for the R2R process, including the design methodology from the beginning of the design to the final graphic data stream (GDS) completion stage, we also discuss other essential technological hurdles that must be overcome in this process. The overall process of design and analysis for printed electronic technique is based on the silicon design flow. We describe the full custom design flow for analog integrated circuits (ICs) and explain how the automatic placement and routing based design of digital integrated circuits can be carried out. In addition, the necessity of sign-off verification using post-simulation, electromagnetic (EM) simulation and bias check simulation required for commercial product development will be explained. The development of PDKs and EDA tools for circuit design in the R2R printed electronics foundry industry will have a potentially tremendous impact on the semiconductor ecosystem by lowering the barriers to producing these devices.

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Mishra, Brijendra, Vivek Singh Kushwah, and Rishi Sharma. "MODELING OF HYBRID MOS FOR THE IMPLEMENTATION OF SWITCHED CAPACITOR FILTER USING SINGLE ELECTRON TRANSISTOR." International Journal of Engineering Technologies and Management Research 5, no. 2 (May 4, 2020): 294–300. http://dx.doi.org/10.29121/ijetmr.v5.i2.2018.659.

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In digital integrated circuit architectures, transistors serve as circuit switches to charge and discharge capacitors to the required logic voltage levels. A transistor is a three terminal semiconductor device used to amplify and switch electronic signals and electrical power. It has been observed that the Scaling down of electronic device sizes has been the fundamental strategy for improving the performance of ultra-large-scale integrated circuits (ULSIs). Metaloxide-semiconductor field-effect transistors (MOSFETs) have been the most prevalent electron devices for ULSI applications. A better device will be formed with the help of new technology, with high operating speed low and power consumption, which can be the future of electronics industry. A methodology for the electric simulation of MOS/SET hybrid circuits will be developed. As a result of this, a functional model for the single-electron transistor will obtain and Implement Switched Capacitor Filter with the help of designed hybrid MOS. The SET model can be easily coded in any hardware description language.

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Wang, Lu, Hongyu Zhu, Ze Zuo, and Dianzhong Wen. "Full-function logic circuit based on egg albumen resistive memory." Applied Physics Letters 121, no. 24 (December 12, 2022): 243505. http://dx.doi.org/10.1063/5.0124826.

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The logic gate is the basic unit of a digital circuit structure. The operation, memory, I/O, and other reading and writing functions of computer systems require logic circuits. Logic gates based on resistive memory can make existing integrated circuits denser, smaller, faster, and use fewer devices. In this paper, Al/polymethyl methacrylate (PMMA)/egg albumen (EA):Au nanoparticles/PMMA/Al multilayer biological resistive random access memory was prepared based on the natural biological material—egg albumen (EA). The device has bipolar switching behavior, a higher switching current ratio, a lower threshold voltage, and better stability. A circuit based on auxiliary logic is constructed using this device, and the logic functions of AND, OR, NOT, NAND, and NOR are realized. This device provides an effective potential solution for implementing high-performance electronic devices and large-scale integrated circuits.

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Ni, Haiyan, Jianping Hu, Xuqiang Zhang, and Haotian Zhu. "The Optimizations of Dual-Threshold Independent-Gate FinFETs and Low-Power Circuit Designs." Journal of Circuits, Systems and Computers 29, no. 07 (September 23, 2019): 2050114. http://dx.doi.org/10.1142/s0218126620501145.

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In this paper, a method of optimizing dual-threshold independent-gate FinFET devices is discussed, and the optimal circuit design is carried out by using these optimized devices. Dual-threshold independent-gate FinFETs include low threshold devices and high threshold devices. The low threshold device is equivalent to two merging parallel short-gate devices and high threshold device is equivalent to two merging series SG devices. We optimize the device mainly by selecting the appropriate gate work function, gate oxide thickness, silicon body thickness and so on. Our optimization is based on the Berkeley BSIMIMG model and verified by TCAD tool. Based on these optimized devices, we designed the compact basic logic gates and two new compact D-type flip-flops. Additionally, we developed a circuit synthesis method based on Binary Decision Diagram (BDD) and the optimized compact basic logic gates. Hspice simulations show that the circuits using the proposed dual-threshold IG FinFETs have better performance than the circuits directly using the short-gate devices.

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Dissertations / Theses on the topic "Electronic Circuits and Devices"

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Butka, Brian K. "An investigation of marrow-bandgap semiconductors : devices, circuits, and systems." Diss., Georgia Institute of Technology, 1989. http://hdl.handle.net/1853/15489.

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Wallace, Chik-Ho Choy. "Modelling and electro-optic quantum-wells modulation devices." Thesis, University of Surrey, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267967.

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Wasshuber, Christoph. "About single-electron devices and circuits /." Wien : Österr. Kunst- und Kulturverl, 1998. http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&doc_number=008183172&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA.

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Poddar, Ravi. "Accurate, high speed predictive modeling of passive devices." Diss., Georgia Institute of Technology, 1998. http://hdl.handle.net/1853/14905.

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Michaelides, Stylianos. "Physics-based process modeling, reliability prediction, and design guidelines for flip-chip devices." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/16028.

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Palojärvi, P. (Pasi). "Integrated electronic and optoelectronic circuits and devices for pulsed time-of-flight laser rangefinding." Doctoral thesis, University of Oulu, 2003. http://urn.fi/urn:isbn:9514269667.

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Abstract The main focus of this work concerned with the development of integrated electronic and optoelectronic circuits and devices for pulsed time-of-flight laser rangefinding is on the construction of the receiver channel, system level integration aimed at realisation of the laser radar module and in integration of all the receiver functions of laser radar on one chip. Since the timing discriminator is a very important part of a pulsed time-of-flight laser rangefinder, two timing discrimination methods are presented and verified by means of circuit implementations, a leading edge discriminator and a high-pass timing discriminator. The walk error of the high-pass timing discriminator is ±4 mm in a dynamic range of 1:620 and the uncompensatable walk error of the leading edge discriminator is ±30 mm in a dynamic range of 1:4000. Additionally a new way of combining the timing discriminator with time interval measurement is presented which achieves a walk error of ±0.5 mm in a dynamic range of 1:21. The usability of the receiver channel chip is verified by constructing three prototypes of pulsed TOF laser radar module. The laser radar achieves mm-level accuracy in a measurement range from 4 m to 34 m with non-cooperative targets. This performance is similar to that of earlier realisations using discrete components or even better and has markedly reduced power consumption and size. The integration level has been increased further by implementing a photodetector on the same chip as the rest of the receiver electronics. The responsivity of the photodetector is about 0.3 A/W at 850 nm wavelength and the noise of the receiver is reduced by a factor of about two relative to realisations using an external photodetector, because of the absence of parasitic capacitances and inductances caused by packages, PCB wiring, bond wires and ESD and I/O cell structures. The functionality of a multi-channel pulsed TOF laser radar chip is demonstrated using the photodiode structure investigated here. The chip includes four photodetectors with receiver channels and a three-channel time-to-digital converter. The chip together with external optics and a laser pulse transmitter enables distances to be measured in three directions with a single optical pulse, thus showing the feasibility of implementing all the receiver functions of a pulsed time-of-flight imager on a single chip using a current semiconductor process.

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Wang, Yi-Fu 1958. "Evaluation of correlated double sampling used with solid state imagers." Thesis, The University of Arizona, 1989. http://hdl.handle.net/10150/277187.

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Correlated double sampling (CDS) is a widely used signal processing technique for removal of the Nyquist (reset) noise which is associated with charge sensing circuits employed in a solid state imager. In this thesis work, the power spectral density at the output of a correlated double sampling circuit with first-order low-pass filtered white noise at the input is calculated. A circuit constructed with discrete elements is made to simulate the output stage of a charge-coupled device (CCD). A low-pass filtered wide-band noise from a noise generator is added to the reset reference level when the output signal from this simulator is sampled by the correlated double sampling technique. The experiment measurements show that only about 10% of the noise power measured by simple sampling is obtained when CDS is employed. An autoregressive (AR) model is assumed to fit the sampled data and a recursive algorithm, based on least-squares solutions for the AR parameters using forward and backward linear prediction, is adopted for spectrum estimation. Some conclusions on choosing the bandwidth of the low pass filter for optimum operation is also included.

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Al-Hakim, Husam A. "Stray inductance effects and protection in GTO thyristor circuits." Thesis, Loughborough University, 1990. https://dspace.lboro.ac.uk/2134/6860.

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The recently developed gate turn-off thyristor is now becoming well established as the first choice switching device in high power converters for applications such as uninterruptible power supplies, frequency changers, and AC and some DC variable speed motor drives. The special operating features of these devices in conventional circuit configurations are investigated. The GTO thyristor physical behaviour and operating characteristics are first described and supported by measurements made at turn-off currents of up to 600A on a specially constructed test circuit. From this, it is shown that, owing to the extremely fast rates of fall of anode current at turn-off, voltage overshoot effects caused by the stray circuit inductances are highly dangerous to the device, and effective snubbing is essential. A detailed study of these stray inductance effects in constructed DC chopper and H-bridge inverter circuits follows. The circuits are modelled to include these strays, with appropriate mathematical analysis and computer simulation, to determine which stray inductances are the most influential in causing GTO thyristor voltage stress. The different switching patterns are considered for the H-bridge to provide quasi-square and various pulse width modulated (PWM) output voltage waveforms, and the detailed current transfer paths in the various circuit devices and snubber components defined and mathematically analysed in each case. Practical switching effects of diode reverse recovery and GTO mismatched switching times are demonstrated and possible damaging conditions revealed. All analytical and computed results are supported by experimental measurements. A GTO thyristor will be damaged by attempting to turn-off an over-current, and satisfactory protection against this is essential. Conventional fusing is usually inadequate, and a better method is to use a fast active system utilising either a crowbar and fuse, or rapid direct gate turn-off. Both methods are investigated and experimental results provided. It is concluded that, with appropriate circuit layout and component choice, the unavoidable stray inductance effects can be limited to manageable levels. The most severe effects are caused by the DC source inductance which is the most difficult to minimise. Others within the power circuit, if kept small, will have a marginal effect. Fast over-current protection is achievable

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Pansare, Manoj M. "Modeling and simulation of analog devices using PRECISE." Thesis, Virginia Tech, 1988. http://hdl.handle.net/10919/43263.

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The design and development of computer models to simulate analog devices and their effects on circuit applications has been investigated at length. The focus of this research is the development of theoretical and computer models for discrete devices using the popular simulator PRECISE, PRogram for Evaluating Circuits in an Interactive Simulation Environment [3], using a new method for model construction. This new method develops a model approximating the mathematics of the simulation via perturbations and iterations [19]. The models developed by the new method in each case yield a minimum simulation accuracy of 90 percent in circuit applications. In comparison, models developed by the conventional method, which uses measured data to complete physical constructs of SPICE 2G.6 [5], offer a lower accuracy for the same circuits. Hence, the new method is more effective than the old method and also much faster, since the model generation process is now automated and does not require time-consuming manual measurements and calculations spread out over a long period of time. With further development, a computer model can also be developed for the theoretical model presented in this thesis for the Gallium Arsenide Metal Semiconductor Field Effect Transistor (GaAs MESFET) device using the same methodology that has been used to develop the computer model for the Bipolar Junction Transistor (BUT) device. Hence this research, in addition to developing a library of a hundred and fifty odd successful models in the PRECISE and SPICE formats for the diode and BUT, can also be used to develop a new model for the GaAs MESFET, which would make both PRECISE and SPICE easier and more user friendly as circuit simulators.
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Agar, Joshua Carl. "Highly conductive stretchable electrically conductive composites for electronic and radio frequency devices." Thesis, Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/44875.

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The electronics industry is shifting its emphasis from reducing transistor size and operational frequency to increasing device integration, reducing form factor and increasing the interface of electronics with their surroundings. This new emphasis has created increased demands on the electronic package. To accomplish the goals to increase device integration and interfaces will undoubtedly require new materials with increased functionality both electrically and mechanically. This thesis focuses on developing new interconnect and printable conductive materials capable of providing power, ground and signal transmission with enhanced electrical performance and mechanical flexibility and robustness. More specifically, we develop: 1.) A new understanding of the conduction mechanism in electrically conductive composites (ECC). 2.) Develop highly conductive stretchable silicone ECC (S-ECC) via in-situ nanoparticle formation and sintering. 3.) Fabricate and test stretchable radio frequency devices based on S-ECC. 4.) Develop techniques and processes necessary to fabricate a stretchable package for stretchable electronic and radio frequency devices. In this thesis we provide convincing evidence that conduction in ECC occurs predominantly through secondary charge transport mechanism (tunneling, hopping). Furthermore, we develop a stretchable silicone-based ECC which, through the incorporation of a special additive, can form and sinter nanoparticles on the surface of the metallic conductive fillers. This sintering process decreases the contact resistance and enhances conductivity of the composite. The conductive composite developed has the best reported conductivity, stretchability and reliability. Using this S-ECC we fabricate a stretchable microstrip line with good performance up to 6 GHz and a stretchable antenna with good return loss and bandwidth. The work presented provides a foundation to create high performance stretchable electronic packages and radio frequency devices for curvilinear spaces. Future development of these technologies will enable the fabrication of ultra-low stress large area interconnects, reconfigurable antennas and other electronic and RF devices where the ability to flex and stretch provides additional functionality impossible using conventional rigid electronics.

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Books on the topic "Electronic Circuits and Devices"

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Suresh, Kumar N., and Vallavaraj A, eds. Electronic devices and circuits. New Delhi: Tata McGraw-Hill, 1998.

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Abraham, Pallas, and Carr Joseph J, eds. Electronic devices. New York, N.Y: Glencoe, Macmillan/McGraw-Hill, 1993.

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Institute Of Electrical and Electronics Engineers. IEEE circuits & devices. New York, NY: Institute of Electrical and Electronics Engineers, 1990.

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Donkor, Eric. Electronic devices and circuits. Edited by Saria Shakib M, Hall Thomas M. S, Prasad Nadipuram R, and Pursley Robert E. Lincolnwood, Ill: NTC Learning Works, 1998.

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5

Electronic devices and circuits. Columbus, Ohio: Merrill, 1986.

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Reddy, S. Rama. Electronic devices and circuits. Pangbourne: Alpha Science, 2003.

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A, Bell David. Electronic devices and circuits. 3rd ed. Englewood Cliffs, N.J: Prentice-Hall, 1986.

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Inc, ebrary, ed. Electronic devices and circuits. Hyderabad [India]: BS Publications, 2008.

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C, Halkias Christos, ed. Electronic devices and circuits. New Delhi: Tata McGraw-Hill Pub. Co., 1991.

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Electronic devices and circuits. 3rd ed. New York: Merrill, 1993.

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Book chapters on the topic "Electronic Circuits and Devices"

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van de Roer, Theo G. "Monolithic microwave integrated circuits." In Microwave Electronic Devices, 313–33. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4615-2500-4_11.

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van de Roer, Theo G. "Transmission lines and microwave circuits." In Microwave Electronic Devices, 202–34. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4615-2500-4_7.

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Siu, Christopher. "Diode Circuits." In Electronic Devices, Circuits, and Applications, 177–203. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80538-8_10.

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Tobin, Paul. "AC Circuits and Circuit Theorems." In PSpice for Circuit Theory and Electronic Devices, 53–64. Cham: Springer International Publishing, 2007. http://dx.doi.org/10.1007/978-3-031-79755-2_5.

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Siu, Christopher. "Practical Tips in Electronics." In Electronic Devices, Circuits, and Applications, 231–39. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80538-8_12.

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Siu, Christopher. "Device Physics Revisited." In Electronic Devices, Circuits, and Applications, 157–75. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80538-8_9.

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Siu, Christopher. "Interpreting I-V Curves." In Electronic Devices, Circuits, and Applications, 1–9. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80538-8_1.

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Siu, Christopher. "Introduction to the Diode." In Electronic Devices, Circuits, and Applications, 11–33. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80538-8_2.

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Siu, Christopher. "Introduction to MOSFETs." In Electronic Devices, Circuits, and Applications, 65–84. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80538-8_5.

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Siu, Christopher. "Semiconductor Physics." In Electronic Devices, Circuits, and Applications, 35–39. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80538-8_3.

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Conference papers on the topic "Electronic Circuits and Devices"

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Mizsei, Janos, Marton C. Bein, Laszlo Juhasz, and Eva Jelinek. "Thermal-electronic devices and thermal-electronic logic circuits (TELC)." In 2015 38th International Spring Seminar on Electronics Technology (ISSE). IEEE, 2015. http://dx.doi.org/10.1109/isse.2015.7247963.

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Singh, B. P., Meena Singh, Sanjay Kumar Roy, R. B. Patel, and B. P. Singh. "Mathematical Modeling of Electronic Devices and Circuits." In INTERNATIONAL CONFERENCE ON METHODS AND MODELS IN SCIENCE AND TECHNOLOGY (ICM2ST-10). AIP, 2010. http://dx.doi.org/10.1063/1.3526268.

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Deen, M. Jamal. "Noise in Advanced Electronic Devices and Circuits." In NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005. AIP, 2005. http://dx.doi.org/10.1063/1.2036687.

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Kimerling, L. C., D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y. K. Chen, T. Conway, et al. "Electronic-photonic integrated circuits on the CMOS platform." In Integrated Optoelectronic Devices 2006, edited by Joel A. Kubby and Graham T. Reed. SPIE, 2006. http://dx.doi.org/10.1117/12.654455.

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Kärtner, F. X., R. Amatya, M. Araghchini, J. Birge, H. Byun, J. Chen, M. Dahlem, et al. "Photonic analog-to-digital conversion with electronic-photonic integrated circuits." In Integrated Optoelectronic Devices 2008, edited by Joel A. Kubby and Graham T. Reed. SPIE, 2008. http://dx.doi.org/10.1117/12.767926.

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Town, Graham E. "Gallium nitride power electronic devices and circuits: A review." In 2015 IEEE 11th International Conference on Power Electronics and Drive Systems. IEEE, 2015. http://dx.doi.org/10.1109/peds.2015.7203483.

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Passaro, Vittorio M. N., and Mario N. Armenise. "CAD techniques for electronic and optoelectronic devices and circuits." In Acousto-Optics and Applications VI, edited by Antoni Sliwinski, Piotr Kwiek, Bogumil B. J. Linde, and A. Markiewicz. SPIE, 1995. http://dx.doi.org/10.1117/12.222743.

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8

Garnier, Francis. "Integrated electronic circuits and devices based on interactive paper." In First International Conference on Interactive Paper, edited by Graham G. Allan and Jean J. Robillard. SPIE, 1997. http://dx.doi.org/10.1117/12.280777.

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IEEE. "Components, Circuits, Devices & Systems." In 2022 Conference of Russian Young Researchers in Electrical and Electronic Engineering (ElConRus). IEEE, 2022. http://dx.doi.org/10.1109/elconrus54750.2022.9755763.

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Yi, S. H., and Albert Chin. "Ultra-low power green electronic devices." In 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2015. http://dx.doi.org/10.1109/edssc.2015.7285106.

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Reports on the topic "Electronic Circuits and Devices"

1

Osgood, Richard M., and Jr. Selective Processing Techniques For Electronic And Opto-Electronic Applications: Quantum-Well Devices and Integrated Optic Circuits. Fort Belvoir, VA: Defense Technical Information Center, September 1995. http://dx.doi.org/10.21236/ada299161.

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2

Osgood, Jr, and Richard M. Selective Processing Techniques for Electronics and Opto-Electronic Applications: Quantum-Well Devices and Integrated Optic Circuits. Fort Belvoir, VA: Defense Technical Information Center, February 1993. http://dx.doi.org/10.21236/ada262887.

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3

Averin, D. V. Semiconductor Single-Electron Digital Devices and Circuits. Fort Belvoir, VA: Defense Technical Information Center, June 1993. http://dx.doi.org/10.21236/ada278338.

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Osgood, Richard M., and Jr. Selective Processing Techniques for Electronic and Optoelectronic Applications: Quantum-Well Devices and Integrated Optic Circuits. Fort Belvoir, VA: Defense Technical Information Center, September 1999. http://dx.doi.org/10.21236/ada369792.

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5

Kiv, Arnold E., Vladyslav V. Bilous, Dmytro M. Bodnenko, Dmytro V. Horbatovskyi, Oksana S. Lytvyn, and Volodymyr V. Proshkin. The development and use of mobile app AR Physics in physics teaching at the university. [б. в.], July 2021. http://dx.doi.org/10.31812/123456789/4629.

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Abstract:

This paper outlines the importance of using Augmented Reality (AR) in physics education at the university as a valuable tool for visualization and increasing the attention and motivation of students to study, solving educational problems related to future professional activities, improving the interaction of teachers and students. Provided an analysis of the types of AR technology and software for developing AR apps. The sequences of actions for developing the mobile application AR Physics in the study of topics: “Direct electronic current”, “Fundamentals of the theory of electronic circuits”. The software tools for mobile application development (Android Studio, SDK, NDK, Google Sceneform, 3Ds MAX, Core Animation, Asset Media Recorder, Ashampoo Music Studio, Google Translate Plugin) are described. The bank of 3D models of elements of electrical circuits (sources of current, consumers, measuring devices, conductors) is created. Because of the students’ and teachers’ surveys, the advantages and disadvantages of using AR in the teaching process are discussed. Mann-Whitney U-test proved the effectiveness of the use of AR for laboratory works in physics by students majoring in “Mathematics”, “Computer Science”, and “Cybersecurity”.

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Richter, Shachar E. Molecular-Based Devices and Circuits. Fort Belvoir, VA: Defense Technical Information Center, September 2008. http://dx.doi.org/10.21236/ada524520.

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Loescher, Douglas H. Predicting the reliability of electronic circuits. Office of Scientific and Technical Information (OSTI), June 2004. http://dx.doi.org/10.2172/919204.

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Marsland, Robert A., All Mirabedini, and Dan Botez. Circuits and Devices for High-Speed Instrumentation. Fort Belvoir, VA: Defense Technical Information Center, May 1996. http://dx.doi.org/10.21236/ada309709.

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Martin, Alain J., Mika Nystroem, and Catherine G. Wong. Design Tools for Integrated Asynchronous Electronic Circuits. Fort Belvoir, VA: Defense Technical Information Center, June 2003. http://dx.doi.org/10.21236/ada417138.

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Schubert, William Kent, Paul Martin Baca, Shawn M. Dirk, G. Ronald Anderson, and David Roger Wheeler. Polymer electronic devices and materials. Office of Scientific and Technical Information (OSTI), January 2006. http://dx.doi.org/10.2172/896554.

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