Relevant bibliographies by topics / Electronic devices

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Electronic devices'

Author: Grafiati
Published: 4 June 2021
Last updated: 9 June 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Electronic devices.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Electronic devices"

1

Bokka, Naveen, Venkatarao Selamneni, Vivek Adepu, Sandeep Jajjara, and Parikshit Sahatiya. "Water soluble flexible and wearable electronic devices: a review." Flexible and Printed Electronics 6, no. 4 (December 1, 2021): 043006. http://dx.doi.org/10.1088/2058-8585/ac3c35.

Full text
Abstract:
Abstract Electronic devices that are biodegradable, water soluble and flexible and are fabricated using biodegradable materials are of great importance due to their potential application in biomedical implants, personal healthcare etc. Moreover, despite the swift growth of semiconductor technologies and considering a device’s shell life of two years, the subject of electronic waste (E-waste) disposal has become a major issue. Transient electronics is a rapidly expanding field that solves the issue of E-waste by destroying the device after usage. The device disintegration can be caused by a multitude of triggering events, an example is that the device totally dissolves and/or disintegrates when submerged in water. This technology enables us to utilize electronic devices for a set amount of time before quickly destroying them, lowering E-waste significantly. This review will highlight the recent advancement in water-soluble flexible electronic devices with more focus on functional materials (water insoluble), fabrication strategies and transiency understanding with special importance on areas where these devices exhibit potential application in flexible and wearable electronic devices which includes field effect transistors, photodetectors, memristors and sensors for personal healthcare monitoring.
APA, Harvard, Vancouver, ISO, and other styles
2

Lewis, James R., Patrick M. Commarford, Peter J. Kennedy, and Wallace J. Sadowski. "Handheld Electronic Devices." Reviews of Human Factors and Ergonomics 4, no. 1 (October 2008): 105–48. http://dx.doi.org/10.1518/155723408x342880.

Full text
Abstract:
From PDAs to cell phones to MP3 players, handheld electronic devices are ubiquitous. Human factors engineers and designers have a need to remain informed about advances in research on user interface design for this class of devices. This review provides human factors research summaries and research-based guidelines for the design of handheld devices. The major topics include anthropometry (fitting the device to the hand), input (types of device control and methods for data entry), output (display design), interaction design (one-handed use, scrolling, menu design, image manipulation, and using the mobile Web), and data sharing (among users, devices, and networks). Thus, this review covers the key aspects of the design of handheld devices, from the design of the physical form of the device through its hardware and software, including its behavior in networks.
APA, Harvard, Vancouver, ISO, and other styles
3

Deswal, Chirag, Nikit T. Nagrare, Gaurav Singh, Himanshu Sharma, and Bindu Garg. "Controlling Electronic Appliances Using Remote Devices." Paripex - Indian Journal Of Research 3, no. 5 (January 15, 2012): 40–43. http://dx.doi.org/10.15373/22501991/may2014/14.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Leuchter, Jan, Ngoc Nam Pham, and Huy Hoang Nguyen. "Automatic test-bench for SiC power devices using LabVIEW." Journal of Electrical Engineering 75, no. 2 (April 1, 2024): 77–85. http://dx.doi.org/10.2478/jee-2024-0011.

Full text
Abstract:
Abstract This paper is devoted to the improvement existing models of electronics devices, which are used in powers electronics as switching devices, and investigate a LabVIEW-based automatic test-bench for Silicon carbide (SiC) power devices. In recent years, power electronic devices are required to be capable handle with higher voltage, leads to development of new generation of power electronic devices, such as SiC devices. However, using a simulation platform, such as Spice, to diminish the complexity of power electronic design with these new devices is hindered by the lack of precise models. The proposed test-bench enables not only measuring static characteristics of SiC power devices, but also extracting key parameters required by simulations. These extracted parameters are then employed in the existing device model, and the simulation results which are based on the model with original parameters and models with extracted parameters are compared with measured results. The comparison clearly demonstrates that parameters obtained from the proposed test-bench significantly enhance the Spice model.
APA, Harvard, Vancouver, ISO, and other styles
5

Xing, Junjie, Shixian Qin, Binglin Lai, Bowen Li, Zhida Li, and Guocheng Zhang. "Top-Gate Transparent Organic Synaptic Transistors Based on Co-Mingled Heterojunctions." Electronics 12, no. 7 (March 29, 2023): 1596. http://dx.doi.org/10.3390/electronics12071596.

Full text
Abstract:
The rapid development of electronics and materials science has driven the progress of various electronic devices, and the new generation of electronic devices, represented by wearable smart products, has introduced transparent new demands on the devices. The ability of biological synapses to enhance or inhibit information when it is transmitted is thought to be the biological mechanism of artificial synaptic devices. The advantage of the human brain over conventional computers is the ability to perform efficient parallel operations when dealing with unstructured and complex problems. Inspired by biologically powerful neural networks, it is important to simulate biological synaptic functions on a single electronic device, and organic artificial synaptic transistors are artificially intelligent and very suitable artificial synaptic devices. Therefore, this paper proposes an organic artificial synaptic transistor with transparency (≥75%), provides a new solution for transparent top-gate synapses, and shows their promise for the next generation of organic electronics.
APA, Harvard, Vancouver, ISO, and other styles
6

Xie, Haipeng, Xianjun Cheng, and Han Huang. "Investigation on the Interfaces in Organic Devices by Photoemission Spectroscopy." Nanomaterials 15, no. 9 (April 30, 2025): 680. https://doi.org/10.3390/nano15090680.

Full text
Abstract:
Organic semiconductors have garnered significant interest owing to their low cost, flexibility, and suitability for large-area electronics, making them vital for burgeoning fields such as flexible electronics, wearable devices, and green energy technologies. The performance of organic electronic devices is crucially determined by their interfacial electronic structure. Specifically, interfacial phenomena such as band bending significantly influence carrier injection, transport, and recombination, making their control paramount for enhancing device performance. This review investigates the interplay among molecular orientation, interfacial charge transfer, and interfacial chemical reactions as the primary drivers of interface band bending. Furthermore, it critically examines effective strategies for optimizing interfacial properties via interface engineering, focusing on interlayer insertion and template layer methods. The review concludes with a summary and outlook, emphasizing the integration of interface design with material development and device architecture to realize next-generation, high-performance organic electronic devices exhibiting improved efficiency and stability.
APA, Harvard, Vancouver, ISO, and other styles
7

Xie, Bingqian. "Cryogenics Power Electronics: Analyzing the Potential of Gallium Nitride (GaN) for High-Efficiency Energy Conversion and Transmission." Applied and Computational Engineering 108, no. 1 (February 14, 2025): 21–25. https://doi.org/10.54254/2755-2721/2025.ld20863.

Full text
Abstract:
Power electronic devices continuously evolve towards higher conversion efficiency and lower energy loss, promoting efficient energy use and sustainable development. However, the rising temperature of the working device usually leads to unavoidable energy loss. To address this issue, cryogenic power electronics have attracted increasing attention from researchers. The use of low temperatures in these devices minimizes thermal losses, improving their efficiency and performance. Additionally, the development of new technology, such as superconductivity, and complex application environments also intensify the demand for cryogenic power electronic devices. The purpose of this paper is to critically analyze the challenge of cryogenics power electronics and provide some solutions, especially for Gallium Nitride (GaN) devices. By reviewing published articles, this article believes that GaN has great potential to address the obstacles in developing cryogenic electronic power. In the first section, the development status of cryogenics power electronics and current research on GaN devices will be introduced, and some challenges will also be given. The second part of this article will explore the feasibility of developing GaN technology to solve these challenges. Finally, a conclusion will be drawn.
APA, Harvard, Vancouver, ISO, and other styles
8

Jawade, Shubham. "Thermal Analysis of Microchannels Heat Sink using Super-hydrophobic Surface." International Journal for Research in Applied Science and Engineering Technology 9, no. 9 (September 30, 2021): 654–57. http://dx.doi.org/10.22214/ijraset.2021.38024.

Full text
Abstract:
Abstract: Electronics devices are the major part of modern technology and with the rapid growth of miniaturizations of electronic devices, the heat dissipation from these devices have been the objective for researchers. This heat dissipation has to done effectively otherwise this will affect the life of device and will result decrement in efficiency. Increasing the heat transfer rates from electronic devices has long been a quest. Microchannel heat sink is one of the best option for removing heat from the electronics devices due to its compact size which provides high surface area to volume ratio that enables higher heat transfer rates. Microchannels are the flow passages having hydraulic diameter ranges from 10 micrometer (µm) to 200µm. Microchannel heat sink enhances the feasibility of electronics device. Microchannels with hydrophobic surface are a promising candidate for cooling of electronics devices, as hydrophobic surface can be used to create friction free regions with a channel which effectively reduce pumping power, flow pressure drop and frictional factor compared to Microchannel without Hydrophobic surface. This paper deals with the detailed behavior of Microchannel with hydrophobic surface. In this work, rectangular cross section with 0.8 mm (800 micron) hydraulic diameter super hydrophobic microchannel is used. Keywords: Microchannel, Hydrophobic surface, Heat transfer rate, Frictional factor.
APA, Harvard, Vancouver, ISO, and other styles
9

Zhang, Zirui, Nie Zhang, and Zhiyong Zhang. "High-Performance Carbon Nanotube Electronic Devices: Progress and Challenges." Micromachines 16, no. 5 (May 1, 2025): 554. https://doi.org/10.3390/mi16050554.

Full text
Abstract:
As silicon-based complementary metal-oxide-semiconductor (CMOS) technology approaches its physical and scaling limits at sub-3-nanometer nodes, critical challenges including the short-channel effect (SCE), surging power consumption, and aggravated parasitic effects have severely constrained further improvements in device performance, integration density, and energy efficiency. Carbon nanotubes (CNTs), with their superior electrical properties, exceptional gate controllability enabled by one-dimensional nanostructure, and compatibility with existing semiconductor processes, have emerged as an ideal candidate material for post-silicon high-performance electronics. Since their discovery, CNT electronics have evolved from fundamental research to a comprehensive technological framework. This review first systematically elaborates the physical characteristics of CNTs and operation mechanisms of electronic devices. Subsequently, we comprehensively summarize recent research progress in high-performance CNT electronic devices with particular emphasis on their breakthrough achievements. Through critical analysis of current developments, we thoroughly discuss fundamental challenges in material synthesis, device fabrication, and circuit integration, while evaluating potential solutions. Finally, we concentrate on future development directions for high-performance CNT devices, aiming to call for collaborative efforts from both academia and industry to accelerate the transition of CNT electronics from laboratory research to industrial implementation.
APA, Harvard, Vancouver, ISO, and other styles
10

Kaur, Inderpreet, Shriniwas Yadav, Sukhbir Singh, Vanish Kumar, Shweta Arora, and Deepika Bhatnagar. "Nano Electronics: A New Era of Devices." Solid State Phenomena 222 (November 2014): 99–116. http://dx.doi.org/10.4028/www.scientific.net/ssp.222.99.

Full text
Abstract:
The technical and economic growth of the twentieth century was marked by evolution of electronic devices and gadgets. The day-to-day lifestyle has been significantly affected by the advancement in communication systems, information systems and consumer electronics. The lifeline of progress has been the invention of the transistor and its dynamic up-gradation. Discovery of fabricating Integrated Circuits (IC’s) revolutionized the concept of electronic circuits. With advent of time the size of components decreased, which led to increase in component density. This trend of decreasing device size and denser integrated circuits is being limited by the current lithography techniques. Non-uniformity of doping, quantum mechanical tunneling of electrons from source to drain and leakage of electrons through gate oxide limit scaling down of devices. Heat dissipation and capacitive coupling between circuit components becomes significant with decreasing size of the components. Along with the intrinsic technical limitations, downscaling of devices to nanometer sizes leads to a change in the physical mechanisms controlling the charge propagation. To deal with this constraint, the search is on to look around for alternative materials for electronic device application and new methods for electronic device fabrication. Such material is comprised of organic molecules, proteins, carbon materials, DNA and the list is endless which can be grown in the laboratory. Many molecules show interesting electronic properties, which make them probable candidates for electronic device applications. The challenge is to interpret their electronic properties at nanoscale so as to exploit them for use in new generation electronic devices. Need to trim downsize and have a higher component density have ushered us into an era of nanoelectronics.
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "Electronic devices"

1

Sergueev, Nikolai. "Electron-phonon interactions in molecular electronic devices." Thesis, McGill University, 2005. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=102171.

Full text
Abstract:
Over the past several decades, semiconductor electronic devices have been miniaturized following the remarkable "Moores law". If this trend is to continue, devices will reach physical size limit in the not too distance future. There is therefore an urgent need to understand the physics of electronic devices at nano-meter scale, and to predict how such nanoelectronics will work. In nanoelectronics theory, one of the most important and difficult problems concerns electron-phonon interactions under nonequilibrium transport conditions. Calculating phonon spectrum, electron-phonon interaction, and their effects to charge transport for nanoelectronic devices including all atomic microscopic details, is a very difficult and unsolved problem. It is the purpose of this thesis to develop a theoretical formalism and associated numerical tools for solving this problem.<br>In our formalism, we calculate electronic Hamiltonian via density functional theory (DFT) within the nonequilibrium Green's functions (NEGF) which takes care of nonequilibrium transport conditions and open device boundaries for the devices. From the total energy of the device scattering region, we derive the dynamic matrix in analytical form within DFT-NEGF and it gives the vibrational spectrum of the relevant atoms. The vibrational spectrum together with the vibrational eigenvector gives the electron-phonon coupling strength at nonequilibrium for various scattering states. A self-consistent Born approximation (SCBA) allows one to determine the phonon self-energy, the electron Green's function, the electronic density matrix and the electronic Hamiltonian, all self-consistently within equal footing. The main technical development of this work is the DFT-NEGF-SCBA formalism and its associated codes.<br>A number of important physics issues are studied in this work. We start with a detailed analysis of transport properties of C60 molecular tunnel junction. We find that charge transport is mediated by resonances due to an alignment of the Fermi level of the electrodes and the lowest unoccupied C60 molecular orbital. We then make a first step toward the problem of analyzing phonon modes of the C60 by examining the rotational and the center-of-mass motions by calculating the total energy. We obtain the characteristic frequencies of the libration and the center-of-mass modes, the latter is quantitatively consistent with recent experimental measurements. Next, we developed a DFT-NEGF theory for the general purpose of calculating any vibrational modes in molecular tunnel junctions. We derive an analytical expression for dynamic matrix within the framework of DFT-NEGF. Diagonalizing the dynamic matrix we obtain the vibrational (phonon) spectrum of the device. Using this technique we calculate the vibrational spectrum of benzenedithiolate molecule in a tunnel junction and we investigate electron-phonon coupling under an applied bias voltage during current flow. We find that the electron-phonon coupling strength for this molecular device changes drastically as the bias voltage increases, due to dominant contributions from the center-of-mass vibrational modes of the molecule. Finally, we have investigated the reverse problem, namely the effect of molecular vibrations on the tunneling current. For this purpose we developed the DFT-NEGF-SCBA formalism, and an example is given illustrating the power of this formalism.
APA, Harvard, Vancouver, ISO, and other styles
2

Kula, Mathias. "Understanding Electron Transport Properties of Molecular Electronic Devices." Doctoral thesis, KTH, Teoretisk kemi, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4500.

Full text
Abstract:
his thesis has been devoted to the study of underlying mechanisms for electron transport in molecular electronic devices. Not only has focus been on describing the elastic and inelastic electron transport processes with a Green's function based scattering theory approach, but also on how to construct computational models that are relevant to experimental systems. The thesis is essentially divided into two parts. While the rst part covers basic assumptions and the elastic transport properties, the second part covers the inelastic transport properties and its applications. It is discussed how di erent experimental approaches may give rise to di erent junction widths and thereby di erences in coupling strength between the bridging molecules and the contacts. This di erence in coupling strength is then directly related to the magnitude of the current that passes through the molecule and may thus explain observed di erences between di erent experiments. Another focus is the role of intermolecular interactions on the current-voltage (I-V) characteristics, where water molecules interacting with functional groups in a set of conjugated molecules are considered. This is interesting from several aspects; many experiments are performed under ambient conditions, which means that water molecules will be present and may interfere with the experiment. Another point is that many measurement are done on self-assembled monolayers, which raises the question of how such a measurement relates to that of a single molecule. By looking at the perturbations caused by the water molecules, one may get an understanding of what impact a neighboring molecule may have. The theoretical predictions show that intermolecular e ects may play a crucial role and is related to the functional groups, which has to be taken into consideration when looking at experimental data. In the second part, the inelastic contribution to the total current is shown to be quite small and its real importance lies in probing the device geometry. Several molecules are studied for which experimental data is available for comparison. It is demonstrated that the IETS is very sensitive to the molecular conformation, contact geometry and junction width. It is also found that some of the spectral features that appear in experiment cannot be attributed to the molecular device, but to the background contributions, which shows how theory may be used to complement experiment. This part concludes with a study of the temperature dependence of the inelastic transport. This is very important not only from a theoretical point of view, but also for the experiments since it gives experimentalists a sense of which temperature ranges they can operate for measuring IETS.<br>QC 20100804. Ändrat titeln från: "Understanding Electron Transport Properties in Molecular Devices" 20100804.
APA, Harvard, Vancouver, ISO, and other styles
3

Kula, Mathias. "Understanding electron transport properties in molecular electronic devices /." Stockholm : Bioteknologi, Kungliga Tekniska högskolan, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4500.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Rajagopal, Senthil Arun. "SINGLE MOLECULE ELECTRONICS AND NANOFABRICATION OF MOLECULAR ELECTRONIC DEVICES." Miami University / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=miami1155330219.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Barlow, Iain J. "Nanostructured Molecular Electronic Devices." Thesis, University of Sheffield, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.486548.

Full text
Abstract:
Candidate organic semiconductor materials based on a,ro-dihexylquaterthiophene (dH4T) and a,ro-dihexylbis(phenylene)bithiophene (dHPTTP) core systems were synthesised. The tenninal positions of the alkyl substituents were substituted with, thioacetate, phosphonic acid, glycolic ester and allyl ether groups to enable the fonnation of self-assembled monolayers (SAMs) of the adsorbates onto Au, Ah03 and H-Si surfaces. These were then probed with x-ray photoelectron spectroscopy (XPS) and friction force microscopy (FFM). Analysis of the XPS spectra confirmed that the oligomers fonned monolayer films onto the respective substrates although the allyl-terminated oligomers were subject to oxidation when attached onto H-Si by thermally-initiated radical attachment. Comparison of this method with photochemical initiation highlighted a potentially competing photolysis reaction. FFM showed that the frictional properties of both the thiolate and phosphonic acid SAMs on Au and Ah03 for the oligomers depended on both the tail group polarity and the density of packing for the adsorbates, whilst the allyl-capped materials formed disordered monolayers on H-Si. Chemical patterns of the thioacetate and phosphonic acid-terminated oligomers were produced by the irradiation of methyl-tenninated alkanethiols and alkylphosphonic acids with 244 nm UV light. The irradiation and subsequent displacement of the exposed adsorbates with the dH4T and dHPTTP-based thioactetates and phosphonic acids resulted in areas of relatively high and low friction, which was imaged by FFM. The SAM photomodification process on Ah03 was monitored by XPS, and suggested C-P bond photolysis as a potential mechanism. Scanning near-field photolithography (SNP) was then used to generate dH4T and dHPTTP features into alkanethiol and phosphonate SAMs. The smallest features, of 40 nm fwhm demonstrate that SNP is a viable method for the preparation of organic semiconductors with nanometre resolution, with potential application in the production of self-assembled monolayer field-effect transistors (SAMFETs).
APA, Harvard, Vancouver, ISO, and other styles
6

Driskill-Smith, Alexander Adrian Girling. "Nanoscale vacuum electronic devices." Thesis, University of Cambridge, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621660.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Malti, Abdellah. "Upscaling Organic Electronic Devices." Doctoral thesis, Linköpings universitet, Fysik och elektroteknik, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-122022.

Full text
Abstract:
Conventional electronics based on silicon, germanium, or compounds of gallium require prohibitively expensive investments. A state-of-the-art microprocessor fabrication facility can cost up to $15 billion while using environmentally hazardous processes. In that context, the discovery of solution-processable conducting (and semiconducting) polymers stirred up expectations of ubiquitous electronics because it enables the mass-production of devices using well established high-volume printing techniques. In essence, this thesis attempts to study the characteristics and applications of thin conducting polymer films (&lt;200 nm), and scale them up to thick-films (&gt;100 μm). First, thin-films of organic materials were combined with an electric double layer capacitor to decrease the operating voltage of organic field effect transistors. In addition, ionic current-rectifying diodes membranes were integrated inside electrochromic displays to increase the device’s bistability and obviate the need for an expensive addressing backplane. This work also shows that it is possible to forgo the substrate and produce a self-standing electrochromic device by compositing the same water-processable material with nanofibrillated cellulose (plus a whitening pigment and high-boiling point solvents). In addition, we investigated the viability of these (semi)conducting polymer nanopaper composites in a variety of applications. This material exhibited an excellent combined electronic-ionic conductivity. Moreover, the conductivities in this easy-to-process composite remained constant within a wide range of thicknesses. Initially, this (semi)conducting nanopaper composite was used to produce electrochemical transistors with a giant transconductance (&gt;1 S). Subsequently, it was used as electrodes to construct a supercapacitorwhose capacitance exceeds 1 F.
APA, Harvard, Vancouver, ISO, and other styles
8

Cao, Hui. "Dynamic Effects on Electron Transport in Molecular Electronic Devices." Doctoral thesis, KTH, Teoretisk kemi, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-12676.

Full text
Abstract:
HTML clipboardIn this thesis, dynamic effects on electron transport in molecular electronic devices are presented. Special attention is paid to the dynamics of atomic motions of bridged molecules, thermal motions of surrounding solvents, and many-body electron correlations in molecular junctions. In the framework of single-body Green’s function, the effect of nuclear motions on electron transport in molecular junctions is introduced on the basis of Born-Oppenheimer approximation. Contributions to electron transport from electron-vibration coupling are investigated from the second derivative of current-voltage characteristics, in which each peak is corresponding to a normal mode of the vibration. The inelastic-tunneling spectrum is thus a useful tool in probing the molecular conformations in molecular junctions. By taking account of the many-body interaction between electrons in the scattering region, both time-independent and time-dependent many-body Green’s function formula based on timedependent density functional theory have been developed, in which the concept of state of the system is used to provide insight into the correlation effect on electron transport in molecular devices. An effective approach that combines molecular dynamics simulations and first principles calculations has also been developed to study the statistical behavior of electron transport in electro-chemically gated molecular junctions. The effect of thermal motions of polar water molecules on electron transport at different temperatures has been found to be closely related to the temperature-dependent dynamical hydrogen bond network.<br>QC20100630
APA, Harvard, Vancouver, ISO, and other styles
9

Taher, Elmasly Saadeldin Elamin. "Electronic evaluation of organic semiconductors towards electronic devices." Thesis, University of Strathclyde, 2013. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=22541.

Full text
Abstract:
Organic p-conjugated macromolecules, (polymers and oligomers) are an important class of semiconductor which are used in applications such as: field effect transistors, photovoltaics, organic light emitting diodes and electrochromic devices. The p-conjugated systems have tuneable band gaps (Eg) and redox properties, whilst offering the potential for flexibility and low cost. In this thesis, the macromolecular compounds and their low molecular weight precursors were characterised by determining their electrochemical and optical properties which were measured using a series of techniques such as: cyclic voltammetry; UV/vis spectroscopy; emission spectroscopy; spectroelectrochemistry; Raman spectroscopy and thermal analyses. Chapter 2 Presents thiophene copolymers with electroactive nitrogen heterocycles. In section 1, a series of monomers containing heteropentalene mesomeric betaine derivatives were characterized. In particular the 3,4-ethylenedioxythiophene (EDOT) derivative (9) was successfully electropolymerised, yielding a polymer with small optical and electrochemical Eg. In Section 2 the characterisation of EDTT, 3-hexylthiophene and EDOT units (17, 18 and 19 respectively) along with their benzothiadiazole (BT) copolymers are shown. Interesting changes in planarity were observed between the PEDOT and PEDTT compounds. Section 3 and 4 produced many EDOT/thiophene derivatives from phenanthroline and [Ru(bpy)2]) as the core unit. (20-26) All polymers exhibited lower electrochemical Eg when compared to their monomers. Compound 26 was polymerised with high oxidative stability to anodic conditions, however, monomer 25 did not polymerise, due to the domination of the strong RuII/RuIII oxidation process. Section 5 shows bis-EDOT pyridine based monomers (27 and 28). Monomer 28 displayed significant effect of the intramolecular charge transfer (ICT) process and lower electrochemical Eg. Three are new compounds 29, 30 and 31 in the section 6, BODIPY cores with two EDOT, thiophene and EDTT units respectively. When all were compared, Compound 29 showed red shift in the absorption spectra, due to stronger electron donating effect of EDOT. Chapter 3: In section 1 the optical and electrochemical properties of three oligofluorene substituted DPP macromolecules (32, 33, 34) and the core precursors (35, 36, 37 and 38) were investigated. The absorption spectra of all compounds in CH2Cl2 revealed two peaks attributed to p-p* transition of quaterfluorene arms and the absorption of DPP core. Compound 33 exhibited a higher LUMO level compared to the other compounds, which was attributed to the effects of the hexyldecyl and phenyl groups. Section 2 describes six new C3-symmetric compounds containing BT units and truxene core (41-46). The UV-absorption spectra of compounds 41-45, reveal an ICT band which is hypsochromically shifted in the case of compound 41 and is not resolved for compound 46. Compounds 41-44 exhibited a good agreement between electrochemical and optical Eg, while a significant difference between those of compound 46 indicates the poor HOMO-LUMO overlap. Chapter 4 A novel processing methodology was used to fabricate multi-layer organic electronic devices by employing electropolymerisation to form a PEDOT/PEDTT bi-layer. The fabricated device did not exhibit any distinctive photo-response when it was assessed in a diode configuration. This was due to inefficient charge separation at the donor- acceptor interface.
APA, Harvard, Vancouver, ISO, and other styles
10

Forsberg, Erik. "Electronic and Photonic Quantum Devices." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3476.

Full text
Abstract:
<p>In this thesis various subjects at the crossroads of quantummechanics and device physics are treated, spanning from afundamental study on quantum measurements to fabricationtechniques of controlling gates for nanoelectroniccomponents.</p><p>Electron waveguide components, i.e. electronic componentswith a size such that the wave nature of the electron dominatesthe device characteristics, are treated both experimentally andtheoretically. On the experimental side, evidence of partialballistic transport at room-temperature has been found anddevices controlled by in-plane Pt/GaAs gates have beenfabricated exhibiting an order of magnitude improvedgate-efficiency as compared to an earlier gate-technology. Onthe theoretical side, a novel numerical method forself-consistent simulations of electron waveguide devices hasbeen developed. The method is unique as it incorporates anenergy resolved charge density calculation allowing for e.g.calculations of electron waveguide devices to which a finitebias is applied. The method has then been used in discussionson the influence of space-charge on gate-control of electronwaveguide Y-branch switches.</p><p>Electron waveguides were also used in a proposal for a novelscheme of carrierinjection in low-dimensional semiconductorlasers, a scheme which altogether by- passes the problem ofslow carrier relaxation in suchstructures. By studying aquantum mechanical two-level system serving as a model forelectroabsorption modulators, the ultimate limits of possiblemodulation rates of such modulators have been assessed andfound to largely be determined by the adiabatic response of thesystem. The possibility of using a microwave field to controlRabi oscillations in two-level systems such that a large numberof states can be engineered has also been explored.</p><p>A more fundamental study on quantum mechanical measurementshas been done, in which the transition from a classical to aquantum "interaction free" measurement was studied, making aconnection with quantum non-demolition measurements.</p>
APA, Harvard, Vancouver, ISO, and other styles
More sources

Books on the topic "Electronic devices"

1

Floyd, Thomas L. Electronic devices. 2nd ed. Columbus: Merrill Pub. Co., 1988.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
2

Abraham, Pallas, and Carr Joseph J, eds. Electronic devices. New York, N.Y: Glencoe, Macmillan/McGraw-Hill, 1993.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
3

Engdahl, Sylvia. Electronic devices. Detroit: Greenhaven Press, 2012.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
4

Floyd, Thomas L. Electronic devices. 5th ed. London: Prentice-Hall International, 1999.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
5

Kristof, Sienicki, ed. Molecular electronics and molecular electronic devices. Boca Raton, FL: CRC Press, 1993.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
6

Nicholas, Braithwaite, Weaver Graham, and Open University, eds. Electronic materials: Inside electronic devices. 2nd ed. London: Butterworth-Heinemann, 1998.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
7

van de Roer, Theo G. Microwave Electronic Devices. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4615-2500-4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Vasileska, Dragica, and Stephen M. Goodnick, eds. Nano-Electronic Devices. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-8840-9.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Brookes, Paul. Electronic surveillance devices. Boston: Butterworth-Heinemann, 1996.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
10

Perez, Richard A. Electronic display devices. Blue Ridge Summit, PA: TAB Professional and Reference Books, 1987.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Book chapters on the topic "Electronic devices"

1

Sobot, Robert. "Electronic Devices." In Wireless Communication Electronics, 67–125. Boston, MA: Springer US, 2012. http://dx.doi.org/10.1007/978-1-4614-1117-8_4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Spellman, Frank R. "Electronic Devices." In The Science of Lithium, 27–28. Boca Raton: CRC Press, 2023. http://dx.doi.org/10.1201/9781003387879-7.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Miyamoto, Hironobu, Manabu Arai, Hiroshi Kawarada, Naoharu Fujimori, Sadafumi Yoshida, Takashi Shinohe, Akio Hiraki, Hirohisa Hiraki, Hideomi Koinuma, and Masao Katayama. "Electronic Devices." In Wide Bandgap Semiconductors, 231–80. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-47235-3_4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Forster, E. "Electronic devices." In Equipment for Diagnostic Radiography, 35–43. Dordrecht: Springer Netherlands, 1985. http://dx.doi.org/10.1007/978-94-009-4930-0_3.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Anand, M. L. "Electronic Devices." In Modern Electronics and Communication Engineering, 33–94. London: CRC Press, 2021. http://dx.doi.org/10.1201/9781003222972-5.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Khaneja, Navin. "Electronic Devices." In Springer Series in Solid-State Sciences, 79–89. Cham: Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-67260-6_5.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Wallis, R. H. "Key Electrical Devices." In Electronic Materials, 47–65. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3818-9_6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Nelson, A. W. "Key Optoelectronic Devices." In Electronic Materials, 67–89. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3818-9_7.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Chen, J., M. A. Reed, S. M. Dirk, D. W. Price, A. M. Rawlett, J. M. Tour, D. S. Grubisha, and D. W. Bennett. "Molecular Electronic Devices." In Molecular Electronics: Bio-sensors and Bio-computers, 59–195. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-010-0141-0_5.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Sobot, Robert. "Electronic Devices: Solutions." In Wireless Communication Electronics by Example, 143–59. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-02871-2_16.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Electronic devices"

1

Guo, Jingyu, Yang Dong, Yuan Zheng, Zhanliang Wang, Zhigang Lu, Ping Zhang, Caidong Xiong, Shaomeng Wang, and Yubin Gong. "A Pencil Beam Electron-Optical System for Teahertz Vacuum Electronic Devices." In 2024 Joint International Vacuum Electronics Conference and International Vacuum Electron Sources Conference (IVEC + IVESC), 1–2. IEEE, 2024. http://dx.doi.org/10.1109/ivecivesc60838.2024.10694958.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Guo, Jingyu, Yang Dong, Shaomeng Wang, Qingying Yi, and Yubin Gong. "A Pencil Beam Electron-Optical System for Teahertz Vacuum Electronic Devices." In TENCON 2024 - 2024 IEEE Region 10 Conference (TENCON), 1899–900. IEEE, 2024. https://doi.org/10.1109/tencon61640.2024.10903094.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Duhandžić, Muhamed, and Zlatan Akšamija. "Electronic Transport and Optical Spectra of Organic Electronic Materials." In 2024 IEEE Nanotechnology Materials and Devices Conference (NMDC), 74–77. IEEE, 2024. https://doi.org/10.1109/nmdc58214.2024.10894328.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Hubbard, William A., and B. C. Regan. "Imaging Nanoscale Electronic Changes in a Biased GaN HEMT." In ISTFA 2024, 317–19. ASM International, 2024. http://dx.doi.org/10.31399/asm.cp.istfa2024p0317.

Full text
Abstract:
Abstract The transmission electron microscope (TEM) is the standard high-resolution technique for imaging microelectronics. But TEM primarily generates contrast related to the physical structure and composition of samples, giving little insight into their electronic properties. Samples must also be electron transparent, typically requiring cross-sectioning of components to nanometers-thin foils prior to imaging, which can compromise their electronic integrity. These cross section samples are also notoriously difficult to electrically connect to without surface leakage dominating transport. As a result, successful in situ electronic testing or bias-manipulation of electronic devices in the TEM is notably rare. Here we image nanoscale, bias-induced electronic changes in an electrically contacted cross section extracted from a GaN high electronmobility transistor (HEMT). The sample is prepared using a Xe+-based plasma focused ion beam (PFIB) to eliminate conducting implantation of the standard FIB ion, Ga+. Scanning TEM electron beam-induced current (STEM EBIC) imaging visualizes bias-induced changes to the device’s electronic structure during normal biasing, stressing, and after failure, all performed in situ.
APA, Harvard, Vancouver, ISO, and other styles
5

Zhou, Jianhua, and Li Shi. "Scanning Probe Microscopy of Carbon Nanotube Electronic Devices." In ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-62318.

Full text
Abstract:
Electron transport and dissipation mechanisms in single-walled carbon nanotube electronic devices are intriguing. In the past, electrostatic force microscopy and scanning thermal microscopy methods have been employed to obtain respectively the voltage and temperature profiles in carbon nanotube electronic devices. The measurement results have suggested weak electron-acoustic phonon scattering at low bias and intense optical phonon emission at high bias. However, because the thermal probe was in direct contact with the nanotubes during thermal imaging, the probe could disturb charge transport. Further, it was difficult to quantify the thermal contact between the probe and the nanotube, making it difficult to quantify the actual temperature rise in the device. We have recently overcome these problems by coating the nanotube device with a 5–10 nm thick polystyrene film. The ultra-thin uniform coating can effectively protect the nanotube device during thermal imaging without reducing the signal level. It can potentially allow us to quantify the temperature rise of the nanotube devices by calibrating the thermal probe using a nanometer scale resistance thermometer covered by the same coating. Our recent results reveal diffusive and dissipative charge transport in a possibly double wall carbon nanotube with a semiconducting outer wall. We have also observed uniform heat dissipation in a metallic single-walled carbon nanotube at an applied bias above 0.2 V. Measurements on metallic and semiconducting single wall carbon nanotubes of different lengths are currently underway in order to improve our understanding of the transport and dissipation mechanisms in carbon nanotube electronics at low biases.
APA, Harvard, Vancouver, ISO, and other styles
6

"Electronic devices." In 8th International Multitopic Conference, 2004. Proceedings of INMIC 2004. IEEE, 2004. http://dx.doi.org/10.1109/inmic.2004.1492967.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Ritzkowsky, Felix, Mina R. Bionta, Marco Turchetti, Karl K. Berggren, Franz X. Kärtner, and Philip D. Keathley. "Engineering the Frequency Response of Petahertz-Electronic Nanoantenna Field-Sampling Devices." In CLEO: Applications and Technology. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_at.2022.jw3a.56.

Full text
Abstract:
Unlike atomic and bulk solid-state systems, nanoantenna-based petahertz-electronic devices offer unprecedented control over electron emission response. We show how device symmetry, nonlinearity, and driving waveform control the frequency response of petahertz-electronic optical field samplers.
APA, Harvard, Vancouver, ISO, and other styles
8

"Opto electronic devices." In 2009 67th Annual Device Research Conference (DRC). IEEE, 2009. http://dx.doi.org/10.1109/drc.2009.5354976.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Isberg, J., Gabriel Ferro, and Paul Siffert. "Diamond Electronic Devices." In 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗. AIP, 2010. http://dx.doi.org/10.1063/1.3518277.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Daniel, Susan. "Biomembrane organic electronic devices." In Organic and Hybrid Sensors and Bioelectronics XIII, edited by Ruth Shinar, Ioannis Kymissis, and Emil J. List-Kratochvil. SPIE, 2020. http://dx.doi.org/10.1117/12.2569287.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "Electronic devices"

1

Schubert, William Kent, Paul Martin Baca, Shawn M. Dirk, G. Ronald Anderson, and David Roger Wheeler. Polymer electronic devices and materials. Office of Scientific and Technical Information (OSTI), January 2006. http://dx.doi.org/10.2172/896554.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Sohn, Lydia L., David Beebe, and Daniel Notterman. Electronic Sensing for Microfluidic Devices. Fort Belvoir, VA: Defense Technical Information Center, October 2005. http://dx.doi.org/10.21236/ada455539.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Perrey, Arnold G., Barry A. Bell, and Marshall J. Treado. Evaluation of electronic monitoring devices. Gaithersburg, MD: National Bureau of Standards, 1986. http://dx.doi.org/10.6028/nbs.ir.86-3501.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Grubin, H. L., and J. P. Kreskovsky. Studying Quantum Phase-Based Electronic Devices. Fort Belvoir, VA: Defense Technical Information Center, September 1988. http://dx.doi.org/10.21236/ada200376.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Nordman, James E. Superconductive Electronic Devices Using Flux Quanta. Fort Belvoir, VA: Defense Technical Information Center, February 1996. http://dx.doi.org/10.21236/ada310962.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Grubin, H. L., M. Cahay, and J. P. Kreskovsky. Studying Quantum Phase-Based Electronic Devices. Fort Belvoir, VA: Defense Technical Information Center, August 1990. http://dx.doi.org/10.21236/ada226809.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Fendler, J. Bilayer lipid membrane-supported electronic devices. Office of Scientific and Technical Information (OSTI), January 1989. http://dx.doi.org/10.2172/5367733.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Zhou, Ming. Novel carbon materials for electronic devices fabrication. Office of Scientific and Technical Information (OSTI), August 2015. http://dx.doi.org/10.2172/1213508.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

O'Brien, Gavin. Securing Electronic Health Records on Mobile Devices. Gaithersburg, MD: National Institute of Standards and Technology, September 2017. http://dx.doi.org/10.6028/nist.sp.1800-1.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Ashton, E. C., and G. C. Bergeson. Electronic systems miniaturization using programmable logic devices. Office of Scientific and Technical Information (OSTI), October 1990. http://dx.doi.org/10.2172/6278105.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'Electronic devices' for particular source types:
Journal articles Dissertations / Theses Books
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography