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Dissertations / Theses on the topic 'Electronic semiconductor'

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1

Newson, D. J. "Electronic transport in III-V semiconductors and semiconductor devices." Thesis, University of Cambridge, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.382242.

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2

Tallarida, Massimo. "Electronic properties of semiconductor surfaces and metal, semiconductor interfaces." [S.l.] : [s.n.], 2005. http://www.diss.fu-berlin.de/2005/196/index.html.

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3

Wharam, David Andrew. "Electronic transport in semiconductor microstructures." Thesis, University of Cambridge, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.315922.

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4

Kelly, Leah L. "Electronic Structure and Dynamics at Organic Semiconductor / Inorganic Semiconductor Interfaces." Diss., The University of Arizona, 2015. http://hdl.handle.net/10150/566997.

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In this dissertation, I present the results of my research on a prototypical interface of the metal oxide ZnO and the organic semiconductor C₆₀. I establish that the physics at such oxide / organic interfaces is complex and very different from the extensively investigated case of organic semiconductor / metal interfaces. The studies presented in this dissertation were designed to address and improve the understanding of the fundamental physics at such hybrid organic / inorganic interfaces. Using photoemission spectroscopies, I show that metal oxide defect states play an important role in det
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5

Richards, David Robert. "The electronic structure and optical properties of GaAs two-dimensional electron systems." Thesis, University of Cambridge, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.359697.

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6

Oliveira, Miguel Afonso Magano Hipolito De Jesus. "Electronic properties of layered semiconductor structures." Thesis, Imperial College London, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.406392.

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7

Charlesworth, Jason. "Electronic structure of metal-semiconductor interfaces." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239738.

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8

Peleckis, Germanas. "Studies on diluted oxide magnetic semiconductors for spin electronic applications." Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20070821.145447/index.html.

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9

Brocke, Thomas. "Electronic Raman spectroscopy on semiconductor quantum dots." Göttingen Cuvillier, 2007.

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10

Marsh, A. C. "The electronic properties of semiconductor heterojunction systems." Thesis, University of Cambridge, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.372890.

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11

O'Sullivan, Eoin. "Electronic states and dynamics in semiconductor structures." Thesis, University of Oxford, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.325987.

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12

Barker, James Alexander. "The electronic properties of semiconductor quantum dots." Thesis, University of Surrey, 2000. http://epubs.surrey.ac.uk/1021/.

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13

Burdis, Mark Samuel. "Electronic conduction processes low-dimensional semiconductor systems." Thesis, University of Exeter, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.235999.

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14

Said, Elias. "Electrolyte : Semiconductor Combinations for Organic Electronic Devices." Doctoral thesis, Linköpings universitet, Institutionen för teknik och naturvetenskap, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-15775.

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The discovery of semi-conducting organic materials has opened new possibilities for electronic devices and systems because of their solution processibility, lightweight and flexibility compared to inorganic semiconductors. The combination of semiconductors with electrolytes, and more especially organic semiconductors and solid electrolytes has attracted the attention of researchers because of the multiple phenomena originating from the simultaneous motion of electrons and ions. This thesis deals with organic-based devices whose working mechanism involves electrolytes. By measuring electrochrom
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15

Blumenfeld, Michael Lewis. "LOCAL ELECTRONIC PROPERTIES OF ORGANIC SEMICONDUCTOR INTERFACES." Diss., The University of Arizona, 2010. http://hdl.handle.net/10150/194860.

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Understanding organic semiconductor interfaces is critical to developing organic photovoltaics (OPV). OPV interfaces are disordered due to weak intermolecular interactions, resulting in diverse charge transfer micro-environments. I present experimental data isolating high-order intermolecular interactions controlling interfacial energy level alignment and describe new instrumental capabilities providing access to the local electronic and kinetic landscape at organic semiconductor interfaces. Interface formation between vanadyl naphthalocyanine (VONc) and highly ordered pyrolytic graphite (HOP
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16

Zhang, Jiawei. "Oxide-semiconductor-based thin-film electronic devices." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/oxidesemiconductorbased-thinfilm-electronic-devices(c8cde776-b68b-47b5-ab63-382a86dbb94b).html.

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Oxide semiconductors have been envisaged to find applications in ubiquitous flexible electronics in daily life such as wearable electronic gadgets to offer novel user experiences. However, one of the bottlenecks to realise these applications is a lack of oxide-semiconductor components capable of wireless communications. As Bluetooth and Wi-Fi are the two dominant communication interfaces, fast enough front-end rectifiers must be developed to operate at their gigahertz (GHz) transmission frequencies. Furthermore, despite of significant developments of n-type oxide semiconductors in the last dec
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17

Bode, Christopher Allen. "Run-to-run control of overlay and linewidth in semiconductor manufacturing." Digital version:, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3008281.

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18

Milward, Jonathan Ray. "Electronic optical nonlinearities in ZnSe." Thesis, Heriot-Watt University, 1991. http://hdl.handle.net/10399/858.

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19

Wolverson, D. "Optical and electronic properties of disordered semiconductors." Thesis, University of Exeter, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379465.

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20

Gilbert, Timothy George. "Electronic states of ultrathin GaAs/AlAs superlattices." Thesis, University of Leicester, 1988. http://hdl.handle.net/2381/35893.

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The continuing refinement of crystal growth techniques has made possible the fabrication of semiconductor superlattices where the period can be as small as one lattice constant. Prediction of many of the properties of such systems requires a detailed description of their electronic structure. In this thesis, a self-consistent pseudopotential method which includes a parametrization scheme has been used to calculate the electronic properties of (GaAs)n(AlAs)n superlattices with n ranging from 1 to 4. The parametrization scheme is used to reproduce energy gaps at the principal symmetry points for
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21

Sharma, Adesh. "Electronic transport in GaAs-AlGaAs heterostructures." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239264.

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22

Hessami, Pilehrood Saeid. "Electronic properties of semiconductor nanostructures under terahertz radiation." Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20061026.162405/index.html.

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23

Hughes, D. T. "Electronic states in semiconductor superlattices and quantum wells." Thesis, Durham University, 1989. http://etheses.dur.ac.uk/6519/.

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The aim of this thesis is two-fold. Firstly to show how a complex bandstructure matching technique has been developed which allows detailed investigations to be made of various low dimensional structures. Secondly the method will be used to investigate interesting physical properties of quantum wells and superlattices. Consequently the thesis will begin with an exposition of the matching technique, giving an indication of the numerical methods used for computational calculations. Evidence will then be given, in the form of a comparison between the present work and the experimental and theoreti
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24

Coles, Richard A. "Theory of the electronic states of semiconductor heterostructures." Thesis, Durham University, 1999. http://etheses.dur.ac.uk/4495/.

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This thesis is concerned with theoretical calculations of the properties of electronic bound states in semiconductor heterostructures. The complex band structure empirical pseudopotential method (EPM) is used as the foundation of the work. Spin orbit coupling and strain effects (due to lattice mismatch) are included in familiar ways, as is the transfer matrix method, allowing the study of arbitrarily configured heterostructures. These techniques are used to investigate the unusually deep InAs/AlSb conduction band well. The strong possibility of intraband transitions at electro magnetic wavelen
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25

Oloumi, Mahmoud. "Electronic structure and band offsets in semiconductor heterostructures." Thesis, Cardiff University, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.314685.

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26

Goble, Nicholas James. "ELECTRONIC TRANSPORT AT SEMICONDUCTOR AND PEROVSKITE OXIDE INTERFACES." Case Western Reserve University School of Graduate Studies / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=case1454002713.

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27

Lincoln, Derek M. "The electronic structure and field effects of an organic-based room temperature magnetic semiconductor." Columbus, Ohio : Ohio State University, 2007. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1193833038.

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28

Galeriu, Calin. "kp Theory of Semiconductor Nanostructures." Digital WPI, 2005. https://digitalcommons.wpi.edu/etd-dissertations/411.

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"The objective of this project was to extend fundamentally the current kp theory by applying the Burt-Foreman formalism, rather than the conventional Luttinger-Kohn formalism, to a number of novel nanostructure geometries. The theory itself was extended in two ways. First in the application of the Burt-Foreman theory to computing the momentum matrix elements. Second in the development of a new formulation of the multiband kp Hamiltonian describing cylindrical quantum dots. A number of new and interesting results have been obtained. The computational implementation using the finite difference m
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29

Greene, John Rausch. "Inquiry of Graphene Electronic Fabrication." DigitalCommons@CalPoly, 2016. https://digitalcommons.calpoly.edu/theses/1671.

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Graphene electronics represent a developing field where many material properties and devices characteristics are still unknown. Researching several possible fabrication processes creates a fabrication process using resources found at Cal Poly a local industry sponsor. The project attempts to produce a graphene network in the shape of a fractal Sierpinski carpet. The fractal geometry proves that PDMS microfluidic channels produce the fine feature dimensions desired during graphene oxide deposit. Thermal reduction then reduces the graphene oxide into a purified state of graphene. Issues arise du
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30

Fix, Aaron. "Synthesis and Properties of Indenofluorene and Diindenothiophene Derivatives for Use as Semiconducting Materials in Organic Electronic Devices." Thesis, University of Oregon, 2013. http://hdl.handle.net/1794/13444.

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Organic electronic devices are becoming commonplace in many academic and industrial materials laboratories, and commercial application of these technologies is underway. To maximize our fundamental understanding of organic electronics, a wide array of molecular frameworks is necessary, as it allows for a variety of optical and electronic properties to be systematically investigated. With the ability to further tune each individual scaffold via derivatization, access to a broad spectrum of interesting materials is possible. Of particular interest in the search for organic semiconducting materia
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31

Remler, Dahlia Karin. "Ion dynamics in semiconductors with self-consistent electronic densities." Thesis, University of Oxford, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329985.

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32

Rad, M. Goshtasbi. "Electronic structure and reactions at some tetrahedral semiconductor surfaces /." Stockholm : Tekniska högsk, 2000. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3069.

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33

Blömers, Christian [Verfasser]. "Electronic transport in narrow-gap semiconductor nanowires / Christian Blömers." Aachen : Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen, 2013. http://d-nb.info/1033849812/34.

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34

Parkinson, Patrick. "Ultrafast electronic processes at nanoscale organic-inorganic semiconductor interfaces." Thesis, University of Oxford, 2009. http://ora.ox.ac.uk/objects/uuid:e68168c6-bcc0-437d-9133-1bfaf955c80a.

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This thesis is concerned with the influence of nanoscale boundaries and interfaces upon the electronic processes that occur within both organic and inorganic semiconductors. Photoluminescent polymers, highly conducting polymers and nanoscale inorganic semiconductors have been investigated using state-of-the-art ultrafast optical techniques, to provide information on the sub-picosecond photoexcitation dynamics in these systems. The influence of dimensionality on the excitation transfer dynamics in a conjugated polymer blend is studied. Using time-resolved photoluminescence spectroscopy, the tra
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35

Gell, Michael A. "Electronic and optical properties of III-V semiconductor superlattices." Thesis, University of Newcastle Upon Tyne, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.352920.

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36

Sabathil, Matthias. "Opto-electronic and quantum transport properties of semiconductor nanostructures /." Garching : Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München, 2005. http://www.loc.gov/catdir/toc/fy1002/2008380872.html.

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37

Lew, Albert Yuet-Sang. "Atomic-scale structural and electronic properties of semiconductor heterostructures /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 1997. http://wwwlib.umi.com/cr/ucsd/fullcit?p9732711.

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38

Zbydniewska, Ewa. "Electronic properties of coupled semiconductor nanocrystals and carbon nanotubes." Thesis, Lille 1, 2016. http://www.theses.fr/2016LIL10010/document.

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Ce travail de thèse décrit les propriétés électroniques de nanodispositifs couplés entre transistors à nanotubes de carbone (CNTFETs) et nanocristaux semiconducteurs colloïdaux CdSe/ZnS individuels en régime de détection de charge unique à température ambiante. Les transferts de charges élémentaires entre nanotubes et nanocristaux sont mis en évidence par les fluctuations temporelles du courant des transistors à tension de grille fixée, et font apparaître un signal à deux niveaux (bruit télégraphique ou RTS), observé sur des échelles de temps entre 1s et 0.1 ms. Les temps d’occupation τ des ni
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39

Bull, Michael. "Models of electronic defects at the Si-SiO←2 interface." Thesis, University of Oxford, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.237868.

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40

Whittington, Geoffrey. "Studies of electronic conduction in some small GaAs based samples." Thesis, University of Nottingham, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.235960.

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41

Royo, Valls Miquel. "Theoretical modelling of electrons and holes in semiconductor nanostructures." Doctoral thesis, Universitat Jaume I, 2010. http://hdl.handle.net/10803/669140.

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En esta tesis se utiliza la aproximación de masa efectiva y función envolvente para estudiar teóricamente las propiedades optoelectrónicas de una gran variedad de nanoestructuras semiconductoras, muchas de las cuales son obtenibles en un laboratorio a día de hoy. El primer capítulo de la tesis se centra en el estudio de los efectos derivados de aplicar campos magnéticos externos sobre varias nanoestructuras formadas por anillos cuánticos: dos anillos acoplados lateralmente y verticalmente, y una red periódica bidimensional de anillos. El segundo capítulo constituye la parte más extensa e impor
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42

Morrison, I. "The electronic and optical properties of silicon/germanium strained layer superlattices." Thesis, University of Newcastle Upon Tyne, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379340.

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43

Beavis, A. W. "Electronic and optical properties of perfect and imperfect II-VI superlattices." Thesis, University of Newcastle Upon Tyne, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.293542.

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44

Hong, Boon Hon. "Modelling of semiconductor nanostructures : electronic properties and simulated optical spectra." Thesis, University of Hull, 2011. http://hydra.hull.ac.uk/resources/hull:5126.

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III-V semiconductor nanostructures are widely used in optoelectronic devices (e.g. lasers and detectors) in the visible (0.4-0.8 μm), near-infrared (0.8-3 μm), mid-infrared (3-5 μm) and far-infrared (> 8 μm) wavelength ranges, with great potential for high performance and high temperature operation. As well as simple designs, complex structures incorporating low dimensional components (e.g. quantum wells and quantum dots) are not unusual. Often, the optical and electronic characteristics of these structures are altered significantly as compared to bulk material. As a prerequisite to design for
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45

Huang, Ya-shih. "Electronic structure of interfacial states formed at polymeric semiconductor heterojunctions." Thesis, University of Cambridge, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.604702.

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This thesis focuses on the nature and role of interfacial states formed at the heterojunctions between polymer donor and polymer acceptor systems. Two classes of organic semiconductors are investigated: (1) conjugated polymers, poly (9,9-dioctylfluorene-co-bis-N,N-(4-butylphenyl)-bis-N,N-phenyl-1,4-phenylenediamine) (PFB) with poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT), and poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) (TFB) with F8BT, and (2) helical supra-molecular assemblies of copolymers consisting of the Pt-porphyrin and perylene chromophores. First, a molecular mo
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46

Cusack, Mark Alexander. "Electronic and optical properties of semiconductor quantum wells and dots." Thesis, University of Newcastle Upon Tyne, 1996. http://hdl.handle.net/10443/1039.

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The influence of structural size and geometry on the electronic states, optical transitions and nonlinear optical response in semiconductor quantum wells and dots has been investigated. A quantum mechanical theory of optical nonlinearities in semiconductors has been used in conjunction with the empirical pseudopotential band structure method to determine the structural parameters leading to optimum second harmonic generation in p-type asymmetric GaAs/AlxGa₁₋xAs quantum well structures. Maximum confinement of all participating states is of paramount importance for optimising such responses. The
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47

Walker, Darren John. "The electronic and optical properties of some novel semiconductor nanostructures." Thesis, University of Nottingham, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.479333.

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48

Dahir, Hadi Mohammed. "An investigation of continuous-time electronic filters for semiconductor integration." Thesis, University of Bradford, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.281119.

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49

Birkett, M. J. "Opto-electronic studies of semiconductor tunnelling structures and quantum wells." Thesis, University of Sheffield, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267179.

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50

Amthong, Attapon. "Electronic states in externally modulated dilute magnetic semiconductor/superconductor hybrids." Thesis, University of Bath, 2012. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.563997.

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Dilute magnetic semiconductors (DMSs) are attractive. They are candidate materials for applications in novel spintronic devices. Because of the giant Zeemaneect in the paramagnetic state, a magnetic eld can be used to manipulate the spin and charge of carriers in DMSs. One possibility is to exploit the nonhomogeneous magnetic elds due to superconductors. In this thesis, the heterostructures of the planar DMS and superconductors in dierent geometries and superconducting states are investigated to understand the electronic structure of electrons in the DMS. The combination of a superconducting d
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