Relevant bibliographies by topics / Electronical temperature

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Electronical temperature'

Author: Grafiati
Published: 4 June 2021
Last updated: 11 February 2022

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Journal articles on the topic "Electronical temperature"

1

Benamara, M. A., A. Talbi, Z. Benamara, et al. "Analysis of C-V Characteristics of InP(p)/InSb/Al2O3/Au MIS Structures in Wide Temperature Range." Advanced Materials Research 685 (April 2013): 179–84. http://dx.doi.org/10.4028/www.scientific.net/amr.685.179.

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Superscript textThe III-V semiconductors materials and in particularly Indium Phosphide are a promising candidates for the elaboration of high speed electronic compounds. The importance of the interface study is increasing considerably in the last years to understand, the mechanism of interface formations and to control perfectly the technology of the elaborated compounds. This study presents an electrical characterization of InP(p)/InSb/Al2O3/ Au structures in the range of temperature varying from the temperature of liquid nitrogen to the temperature of 400°K. In order to give the evolution o
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Xu, Jiachen, Mingfang Wu, Juan Pu, and Songbai Xue. "Novel Au-Based Solder Alloys: A Potential Answer for Electrical Packaging Problem." Advances in Materials Science and Engineering 2020 (May 26, 2020): 1–16. http://dx.doi.org/10.1155/2020/4969647.

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With the development of electronical technology and the construction of the fifth-generation cellular networks, electronic devices with higher integrated level and power are widely applied. Hence, greater demands are being placed on electronic packaging materials. High-Pb solder alloys were widely used for low- and medium-temperature soldering for the past decades but have been prohibited due to toxicity. Au-based solder alloys with proper melting and mechanical properties show great potential to replace high-Pb solder alloys and are being emphasized recently. But in comparison with Pb-contain
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Ma, Rui Xin, Shi Na Li, and Guo Quan Suo. "Effects of Substrate Temperature on Structure and Properties of Al-F Co-doped ZnO Thin Films." Advanced Materials Research 602-604 (December 2012): 1404–8. http://dx.doi.org/10.4028/www.scientific.net/amr.602-604.1404.

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ZnO:(Al, F) thin films on glass substrates have been prepared by RF magnetron sputtering. The influence of substrate temperature on the microstructure,optical and electrical properties of ZnO(Al,F) films have been studied. The effects of substrate temperature on structure and optical and electronical properties of ZnO:Al:F thin films were investigated by XRD,SEM,UV-Visible spectrophotometry and four-point proble method.Experimental results indicate that substrate temperature affects the structure and properties of the thin films considerably.The lowest resistivity obtained in this study was 9.
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Amrehn, Sabrina, Xia Wu, and Thorsten Wagner. "High-temperature stable indium oxide photonic crystals: transducer material for optical and resistive gas sensing." Journal of Sensors and Sensor Systems 5, no. 1 (2016): 179–85. http://dx.doi.org/10.5194/jsss-5-179-2016.

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Abstract. Indium oxide (In2O3) inverse opal is a promising new transducer material for resistive and optical gas sensors. The periodically ordered and highly accessible pores of the inverse opal allow the design of resistive sensors with characteristics independent of structure limitations, such as diffusion effects or limited conductivity due to constricted crosslinking. Additionally the photonic properties caused by the inverse opal structure can be utilized to read out the sensors' electronical state by optical methods. Typically semiconducting sensors are operated at high temperatures (&gt
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Akimoto, Yoshihiro, Sanae Ikehara, Takashi Yamaguchi, et al. "Galectin expression in healing wounded skin treated with low-temperature plasma: Comparison with treatment by electronical coagulation." Archives of Biochemistry and Biophysics 605 (September 2016): 86–94. http://dx.doi.org/10.1016/j.abb.2016.01.012.

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Zhang, Song, Bo Wu, Xue Ke Wu, and Tao Jing. "The Structural and Hydrogen Storage Properties of Al-Doped Boron Nitride Nanotube." Applied Mechanics and Materials 672-674 (October 2014): 712–15. http://dx.doi.org/10.4028/www.scientific.net/amm.672-674.712.

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The geometrical structures and electronical properties, as well as hydrogen storage of Al-doped boron nitride nanotube have been investigated using first principles based on density functional theory. The results show that the symmetry of boron nitride nanotube is destroyed slightly by doping one Al atom. Furthermore, physical absorption is found due to the small average absorption energy of Al-BNNT-nH2, which indicates that this hydrogen absorption will occurs at room temperature. In addition, some novel structures presenting almost same absorption behaviors are predicted, which will offer us
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Li, Bi, Li Yun Cao, Jian Feng Huang, and Jian Peng Wu. "Synthesis of Cobalt Sulfide Nanocrystallites via an Efficient Microwave Hydrothermal Process." Key Engineering Materials 512-515 (June 2012): 162–65. http://dx.doi.org/10.4028/www.scientific.net/kem.512-515.162.

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Nanostructured cobalt sulfide(CoS) can be widely used as high energy density batteries, supercapacitors, solar photovoltaic materials and catalysts due to its excellent electronical, optical, magnetic and catalytic performance. In order to synthesize CoS crystallites in a efficient route, a facile microwave hydrothermal process was developed by using cobalt nitrate hexahydrate and thioacetamide(TAA) as source materials. The phase compositions and morphologies of the crystallites were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The influences of microwav
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Predescu, Andra Mihaela, Ruxandra Vidu, Petrică Vizureanu, Andrei Predescu, Ecaterina Matei, and Cristian Predescu. "Properties of Cu-xFe3O4 Nanocomposites for Electrical Application." Materials 13, no. 14 (2020): 3086. http://dx.doi.org/10.3390/ma13143086.

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Copper matrix nanocomposites reinforced with magnetite nanoparticles were developed using powder metallurgy. Various processing parameters were taken into consideration, such as magnetite content, compaction pressure, sintering time and temperature. The nanopowder blends were compacted using various uniaxial pressures and sintered at 650 and 800 °C in order to study the influence of processing parameters on morphology, structure, thermal, magnetic and mechanical properties. The structure and morphology of the nanocomposites analyzed by X-ray diffraction (XRD), bright field transmission electro
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Widenmeyer, Marc, Tobias Kohler, Margarita Samolis, et al. "Band Gap Adjustment in Perovskite-type Eu1−xCaxTiO3 via Ammonolysis." Zeitschrift für Physikalische Chemie 234, no. 5 (2020): 887–909. http://dx.doi.org/10.1515/zpch-2019-1429.

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AbstractPerovskite-type oxynitrides AB(O,N)3 are potential candidates for photoelectrode materials in solar water splitting. A drawback of these materials is their low sintering tendency resulting in low electrical conductivities. Typically, they are prepared by ammonia treatment of insulating, wide band gap oxides. In this study, we propose an approach starting from small band gap oxides Eu1−xCaxTiO3−δ and then widen the band gaps in a controlled way by ammonolysis and partial Ca2+ substitution. Both together induced a distortion of the octahedral network and dilution of the Eu4f and N2p leve
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Signoret, Charles, Pierre Girard, Agathe Le Guen, et al. "Degradation of Styrenic Plastics during Recycling: Accommodation of PP within ABS after WEEE Plastics Imperfect Sorting." Polymers 13, no. 9 (2021): 1439. http://dx.doi.org/10.3390/polym13091439.

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With the development of dark polymers for industrial sorting technologies, economically profitable recycling of plastics from Waste Electrical and Electronical Equipment (WEEE) can be envisaged even in the presence of residual impurities. In ABS extracted from WEEE, PP is expected to be the more detrimental because of its important lack of compatibility. Hence, PP was incorporated to ABS at different rates (2 to 8 wt%) with a twin-screw extruder. PP was shown to exhibit a nodular morphology with an average diameter around 1–2 µm. Tensile properties were importantly diminished beyond 4 wt% but
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Dissertations / Theses on the topic "Electronical temperature"

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Smarra, Devin A. "Low Temperature Co-Fired Ceramic (LTCC) Substrate for High Temperature Microelectronics." University of Dayton / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1493386231571894.

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Williams, Michael Eric. "Ab-initio elastic and thermodynamic properties of high-temperature cubic intermetallics at finite temperatures." [College Station, Tex. : Texas A&M University, 2008. http://hdl.handle.net/1969.1/ETD-TAMU-2779.

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Yuan, Mengyang. "GaN electronics for high-temperature applications." Thesis, Massachusetts Institute of Technology, 2020. https://hdl.handle.net/1721.1/128350.

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Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, February, 2020<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 95-100).<br>Gallium nitride is a promising candidate for high-temperature applications. However, despite the excellent performance shown by early high-temperature prototypes, several issues in traditional lateral AlGaN/GaN HEMTs could cause early degradation and failure under high-temperature operation (over 300°C). These include ohmic degradation, gate leakage, buffer leakage, and p
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Wagner, Thomas. "Low temperature silicon epitaxy defects and electronic properties /." [S.l. : s.n.], 2003. http://www.bsz-bw.de/cgi-bin/xvms.cgi?SWB10678419.

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Lebel, Larry. "Electronic temperature sensor arrays for gas turbine components." Mémoire, Université de Sherbrooke, 2004. http://savoirs.usherbrooke.ca/handle/11143/1255.

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The current master's thesis presents the development of a new temperature sensing technology for gas turbine components.The proposed sensor array allows real time simultaneous measurements of temperature at multiple locations, using only two communication leads. Frequency modulation is used to multiplex the signals of more than ten temperature sensors through common wires. At every point of reading, silicon carbide (SiC) microelectronic oscillators generate the required waveforms, at frequencies that are temperature dependent. Those oscillators are fed with a common DC power source, and add th
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Fallas, Chinchilla Juan Carlos. "Pressure-temperature phase diagram of LiA1H₄." abstract and full text PDF (UNR users only), 2009. http://0-gateway.proquest.com.innopac.library.unr.edu/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:1464434.

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Sapsai, Andrei. "Temperature distribution and thermally induced stresses in electronic packages." Thesis, Monterey, California. Naval Postgraduate School, 1992. http://hdl.handle.net/10945/24065.

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Hou, Michelle M. (Michelle Ming-Jan). "Low temperature transient liquid phase bonding for electronic packaging." Thesis, Massachusetts Institute of Technology, 1992. http://hdl.handle.net/1721.1/60735.

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Matthews, Jason E. "Thermoelectric and Heat Flow Phenomena in Mesoscopic Systems." Thesis, University of Oregon, 2011. http://hdl.handle.net/1794/12108.

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xvii, 189 p. ： ill. (some col.)<br>Low-dimensional electronic systems, systems that are restricted to single energy levels in at least one of the three spatial dimensions, have attracted considerable interest in the field of thermoelectric materials. At these scales, the ability to manipulate electronic energy levels offers a great deal of control over a device's thermopower, that is, its ability to generate a voltage due to a thermal gradient. In addition, low-dimensional devices offer increased control over phononic heat flow. Mesoscale geometry can also have a large impact on both electron
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Schalk, Martin. "Ultra-fast electronic pulse control at cryogenic temperatures." Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAY061.

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Synchronisation ultra-rapide, mise en forme d’impulsions et commutation efficace sont au cœur des mesures précises. L’objectif de ce projet de thèse est d’apporter le contrôle électronique ultra-rapide aux circuits nanométriques refroidis à des températures de l’ordre du mK. L’opération quantique rapide rapprochera le domaine de l’optique électronique quantique de son homologue photonique avec des applications pour un contrôle électronique rapide et efficace des dispositifs quantiques. Les dispositifs expérimentaux développés au cours de ce projet de thèse sont décrits et testés de manière à e
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Books on the topic "Electronical temperature"

1

Willander, M., and H. L. Hartnagel, eds. High Temperature Electronics. Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-1197-3.

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Christou, A. Reliability of high temperature electronics. Center for Reliability Engineering, University of Maryland, 1996.

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Imanaka, Yoshihiko. Multilayered low temperature cofired ceramics (LTCC) technology. Springer, 2005.

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Multilayered low temperature cofired ceramics (LTCC) technology. Springer, 2004.

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Hara, Ko. High temperature superconducting electronics: Basis for materials and device structures. Ohmsha, 1993.

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Fox, Robert Martin. Analog MOS electronics at liquid nitrogen temperature. Auburn University, 1986.

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L, Claeys Cor, Electrochemical Society. Energy Technology Division., Electrochemical Society Electronics Division, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society Meeting, eds. Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity. Electrochemical Society, 1995.

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Symposium on Low Temperature Electronics and High Temperature Superconductors (2nd 1993 Honolulu, Hawaii). Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductors. Electrochemical Society, 1993.

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Symposium on Low Temperature Electronics and High Temperature Superconductors (1987 Honolulu, Hawaii). Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductors. Electrochemical Society, 1988.

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Symposium on Low Temperature Electronics and High Temperature Superconductivity (4th 1997 Montreal, Canada). Proceedings of the Fourth Symposium on Low Temperature Electronics and High Temperature Superconductivity. Edited by Claeys Cor L, Electrochemical Society Electronics Division, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society Meeting. Electrochemical Society, 1997.

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Book chapters on the topic "Electronical temperature"

1

Christenson, D. W. "High temperature electronics in aircraft and space systems." In High Temperature Electronics. Springer US, 1997. http://dx.doi.org/10.1007/978-1-4613-1197-3_1.

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Shur, M., and M. A. Khan. "GaN-based field effect transistors." In High Temperature Electronics. Springer US, 1997. http://dx.doi.org/10.1007/978-1-4613-1197-3_10.

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Erskine, J. C., R. G. Carter, J. A. Hearn, H. L. Fields, J. M. Himelick, and J. A. Yurtin. "High temperature automotive electronics." In High Temperature Electronics. Springer US, 1997. http://dx.doi.org/10.1007/978-1-4613-1197-3_2.

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Fallet, T., G. Forre, and J. Gakkestad. "Oil-well applications: instrumentation of deep hot holes." In High Temperature Electronics. Springer US, 1997. http://dx.doi.org/10.1007/978-1-4613-1197-3_3.

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Brown, R. B., and K. Wu. "High temperature operation of silicon MOS transistors." In High Temperature Electronics. Springer US, 1997. http://dx.doi.org/10.1007/978-1-4613-1197-3_4.

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Burbach, G., and R. Werner. "Silicon-on-insulator: CMOS devices and processes for high temperature applications." In High Temperature Electronics. Springer US, 1997. http://dx.doi.org/10.1007/978-1-4613-1197-3_5.

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Hartnagel, H. L. "High temperature electronics based on compound semiconductors." In High Temperature Electronics. Springer US, 1997. http://dx.doi.org/10.1007/978-1-4613-1197-3_6.

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Fricke, K., and W. Y. Lee. "Contacts for GaAs devices." In High Temperature Electronics. Springer US, 1997. http://dx.doi.org/10.1007/978-1-4613-1197-3_7.

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Fricke, K., V. Krozer, and M. Schüßler. "GaAs high temperature devices." In High Temperature Electronics. Springer US, 1997. http://dx.doi.org/10.1007/978-1-4613-1197-3_8.

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Tairov, Y. M., and M. Willander. "Silicon carbide: material and device properties." In High Temperature Electronics. Springer US, 1997. http://dx.doi.org/10.1007/978-1-4613-1197-3_9.

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Conference papers on the topic "Electronical temperature"

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Lin, Ying, Yong Xu, Shu Chen, and Limei Ma. "Design of a Meander Line Dipole RFID Tag Antenna for Temperature Sensor." In Proceedings of the 2019 International Conference on Electronical, Mechanical and Materials Engineering (ICE2ME 2019). Atlantis Press, 2019. http://dx.doi.org/10.2991/ice2me-19.2019.6.

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Akimoto, Y., S. Ikehara, T. Yamaguchi, et al. "Increase in galectin expression in healing wounded skin treated with low-temperature plasma: Comparison with treatment by electronical coagulation." In 2016 IEEE International Conference on Plasma Science (ICOPS). IEEE, 2016. http://dx.doi.org/10.1109/plasma.2016.7534126.

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Syu, Ciao-Yi, Yu-Lin Shen, Cong-Han Xiao, et al. "New Collagen Scaffolds with Extra Cellular Matrix Derived from Treatments of Supercritical Fluid and Protease in Low Temperature." In Proceedings of the 2019 International Conference on Electronical, Mechanical and Materials Engineering (ICE2ME 2019). Atlantis Press, 2019. http://dx.doi.org/10.2991/ice2me-19.2019.44.

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Wu, Libo, and Ya Wang. "True Presence Detection via Passive Infrared Sensor Network Using Liquid Crystal Infrared Shutters." In ASME 2020 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/smasis2020-2366.

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Abstract Recently, smart home applications are increasing fast, including but not limited to occupancy-dependent control of lighting, heating and cooling. Passive infrared (PIR) sensors play an important role in these applications to perceive the presence and/or the motion of human. However, PIR sensors are not able to detect stationary occupants while stationary presence takes up most time of the day. And thus, the resulted false negative detection leads to uncomfortable light/temperature swings, shortened equipment’s lifespan, and/or energy waste, etc. To address this issue, our group has de
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Emery, V. J., and S. A. Kivelson. "Local electronic structure and high temperature superconductivity." In High temperature superconductivity. AIP, 1999. http://dx.doi.org/10.1063/1.59581.

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Liu, H. L., S. Yoon, S. L. Cooper, S.-W. Cheong, and P. D. Han. "Electronic Raman scattering in the perovskite manganese oxides." In High temperature superconductivity. AIP, 1999. http://dx.doi.org/10.1063/1.59603.

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Booth, N. E., L. Parlato, G. P. Pepe, et al. "Superconducting electronic device with transistor-like properties." In LOW TEMPERATURE DETECTORS: Ninth International Workshop on Low Temperature Detectors. American Institute of Physics, 2002. http://dx.doi.org/10.1063/1.1457646.

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Rees, D. G., P. Glasson, V. Antonov, et al. "An Electronic Array On Liquid Helium." In LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. AIP, 2006. http://dx.doi.org/10.1063/1.2355255.

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Strohm, T., M. Cardona, and A. A. Martin. "Electronic Raman scattering in high-T[sub c] superconductors." In High temperature superconductivity. AIP, 1999. http://dx.doi.org/10.1063/1.59635.

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Shwarts, Yu M. "Temperature Sensors for Extreme Electronics." In TEMPERATURE: Its Measurement and Control in Science and Industry; Volume VII; Eighth Temperature Symposium. AIP, 2003. http://dx.doi.org/10.1063/1.1627281.

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Reports on the topic "Electronical temperature"

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Yakura, S. J. High Temperature Electronics Assessment. Defense Technical Information Center, 1993. http://dx.doi.org/10.21236/ada291853.

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Dmitriev, Vladimir, T. P. Chow, Steven P. DenBaars, Michael S. Shur, and Michael G. Spencer. High-Temperature Electronics in Europe. Defense Technical Information Center, 2000. http://dx.doi.org/10.21236/ada399754.

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Bruce Ohme. Deep Trek High Temperature Electronics Project. Office of Scientific and Technical Information (OSTI), 2007. http://dx.doi.org/10.2172/923033.

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Normann, Randy Allen. First high-temperature electronics products survey 2005. Office of Scientific and Technical Information (OSTI), 2006. http://dx.doi.org/10.2172/889944.

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Peatman, William C. Heterodimensional Technology for High Power, High Temperature Electronics. Defense Technical Information Center, 1998. http://dx.doi.org/10.21236/ada344265.

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Wu, X. D., A. Finokoglu, M. Hawley, et al. High-temperature superconducting thin-film-based electronic devices. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/378956.

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Savrun, E., C. Toy, and M. Sarikaya. High Thermal Conductivity AlN Packages for High-Temperature Electronics. Defense Technical Information Center, 1998. http://dx.doi.org/10.21236/ada359647.

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Nahman, N. S. The LANL P14 temperature control electronics for the waveshaping filter. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/527550.

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Shelton, Jr., W. (Theoretical studies on the electronic structure of high-temperature superconductors). Office of Scientific and Technical Information (OSTI), 1988. http://dx.doi.org/10.2172/5504566.

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Dunn, Lisa. Electronic Structure of the Bismuth Family of High Temperature Superconductors. Office of Scientific and Technical Information (OSTI), 2002. http://dx.doi.org/10.2172/799025.

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