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Journal articles on the topic 'Electronical temperature'

Author: Grafiati

Published: 4 June 2021

Last updated: 11 February 2022

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1

Benamara, M. A., A. Talbi, Z. Benamara, et al. "Analysis of C-V Characteristics of InP(p)/InSb/Al₂O₃/Au MIS Structures in Wide Temperature Range." Advanced Materials Research 685 (April 2013): 179–84. http://dx.doi.org/10.4028/www.scientific.net/amr.685.179.

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Superscript textThe III-V semiconductors materials and in particularly Indium Phosphide are a promising candidates for the elaboration of high speed electronic compounds. The importance of the interface study is increasing considerably in the last years to understand, the mechanism of interface formations and to control perfectly the technology of the elaborated compounds. This study presents an electrical characterization of InP(p)/InSb/Al2O3/ Au structures in the range of temperature varying from the temperature of liquid nitrogen to the temperature of 400°K. In order to give the evolution o

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Xu, Jiachen, Mingfang Wu, Juan Pu, and Songbai Xue. "Novel Au-Based Solder Alloys: A Potential Answer for Electrical Packaging Problem." Advances in Materials Science and Engineering 2020 (May 26, 2020): 1–16. http://dx.doi.org/10.1155/2020/4969647.

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With the development of electronical technology and the construction of the fifth-generation cellular networks, electronic devices with higher integrated level and power are widely applied. Hence, greater demands are being placed on electronic packaging materials. High-Pb solder alloys were widely used for low- and medium-temperature soldering for the past decades but have been prohibited due to toxicity. Au-based solder alloys with proper melting and mechanical properties show great potential to replace high-Pb solder alloys and are being emphasized recently. But in comparison with Pb-contain

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Ma, Rui Xin, Shi Na Li, and Guo Quan Suo. "Effects of Substrate Temperature on Structure and Properties of Al-F Co-doped ZnO Thin Films." Advanced Materials Research 602-604 (December 2012): 1404–8. http://dx.doi.org/10.4028/www.scientific.net/amr.602-604.1404.

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ZnO:(Al, F) thin films on glass substrates have been prepared by RF magnetron sputtering. The influence of substrate temperature on the microstructure,optical and electrical properties of ZnO(Al,F) films have been studied. The effects of substrate temperature on structure and optical and electronical properties of ZnO:Al:F thin films were investigated by XRD,SEM,UV-Visible spectrophotometry and four-point proble method.Experimental results indicate that substrate temperature affects the structure and properties of the thin films considerably.The lowest resistivity obtained in this study was 9.

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Amrehn, Sabrina, Xia Wu, and Thorsten Wagner. "High-temperature stable indium oxide photonic crystals: transducer material for optical and resistive gas sensing." Journal of Sensors and Sensor Systems 5, no. 1 (2016): 179–85. http://dx.doi.org/10.5194/jsss-5-179-2016.

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Abstract. Indium oxide (In2O3) inverse opal is a promising new transducer material for resistive and optical gas sensors. The periodically ordered and highly accessible pores of the inverse opal allow the design of resistive sensors with characteristics independent of structure limitations, such as diffusion effects or limited conductivity due to constricted crosslinking. Additionally the photonic properties caused by the inverse opal structure can be utilized to read out the sensors' electronical state by optical methods. Typically semiconducting sensors are operated at high temperatures (&gt

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Akimoto, Yoshihiro, Sanae Ikehara, Takashi Yamaguchi, et al. "Galectin expression in healing wounded skin treated with low-temperature plasma: Comparison with treatment by electronical coagulation." Archives of Biochemistry and Biophysics 605 (September 2016): 86–94. http://dx.doi.org/10.1016/j.abb.2016.01.012.

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Zhang, Song, Bo Wu, Xue Ke Wu, and Tao Jing. "The Structural and Hydrogen Storage Properties of Al-Doped Boron Nitride Nanotube." Applied Mechanics and Materials 672-674 (October 2014): 712–15. http://dx.doi.org/10.4028/www.scientific.net/amm.672-674.712.

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The geometrical structures and electronical properties, as well as hydrogen storage of Al-doped boron nitride nanotube have been investigated using first principles based on density functional theory. The results show that the symmetry of boron nitride nanotube is destroyed slightly by doping one Al atom. Furthermore, physical absorption is found due to the small average absorption energy of Al-BNNT-nH2, which indicates that this hydrogen absorption will occurs at room temperature. In addition, some novel structures presenting almost same absorption behaviors are predicted, which will offer us

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Li, Bi, Li Yun Cao, Jian Feng Huang, and Jian Peng Wu. "Synthesis of Cobalt Sulfide Nanocrystallites via an Efficient Microwave Hydrothermal Process." Key Engineering Materials 512-515 (June 2012): 162–65. http://dx.doi.org/10.4028/www.scientific.net/kem.512-515.162.

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Nanostructured cobalt sulfide(CoS) can be widely used as high energy density batteries, supercapacitors, solar photovoltaic materials and catalysts due to its excellent electronical, optical, magnetic and catalytic performance. In order to synthesize CoS crystallites in a efficient route, a facile microwave hydrothermal process was developed by using cobalt nitrate hexahydrate and thioacetamide(TAA) as source materials. The phase compositions and morphologies of the crystallites were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The influences of microwav

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Predescu, Andra Mihaela, Ruxandra Vidu, Petrică Vizureanu, Andrei Predescu, Ecaterina Matei, and Cristian Predescu. "Properties of Cu-xFe3O4 Nanocomposites for Electrical Application." Materials 13, no. 14 (2020): 3086. http://dx.doi.org/10.3390/ma13143086.

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Copper matrix nanocomposites reinforced with magnetite nanoparticles were developed using powder metallurgy. Various processing parameters were taken into consideration, such as magnetite content, compaction pressure, sintering time and temperature. The nanopowder blends were compacted using various uniaxial pressures and sintered at 650 and 800 °C in order to study the influence of processing parameters on morphology, structure, thermal, magnetic and mechanical properties. The structure and morphology of the nanocomposites analyzed by X-ray diffraction (XRD), bright field transmission electro

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Widenmeyer, Marc, Tobias Kohler, Margarita Samolis, et al. "Band Gap Adjustment in Perovskite-type Eu1−xCaxTiO3 via Ammonolysis." Zeitschrift für Physikalische Chemie 234, no. 5 (2020): 887–909. http://dx.doi.org/10.1515/zpch-2019-1429.

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AbstractPerovskite-type oxynitrides AB(O,N)3 are potential candidates for photoelectrode materials in solar water splitting. A drawback of these materials is their low sintering tendency resulting in low electrical conductivities. Typically, they are prepared by ammonia treatment of insulating, wide band gap oxides. In this study, we propose an approach starting from small band gap oxides Eu1−xCaxTiO3−δ and then widen the band gaps in a controlled way by ammonolysis and partial Ca2+ substitution. Both together induced a distortion of the octahedral network and dilution of the Eu4f and N2p leve

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Signoret, Charles, Pierre Girard, Agathe Le Guen, et al. "Degradation of Styrenic Plastics during Recycling: Accommodation of PP within ABS after WEEE Plastics Imperfect Sorting." Polymers 13, no. 9 (2021): 1439. http://dx.doi.org/10.3390/polym13091439.

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With the development of dark polymers for industrial sorting technologies, economically profitable recycling of plastics from Waste Electrical and Electronical Equipment (WEEE) can be envisaged even in the presence of residual impurities. In ABS extracted from WEEE, PP is expected to be the more detrimental because of its important lack of compatibility. Hence, PP was incorporated to ABS at different rates (2 to 8 wt%) with a twin-screw extruder. PP was shown to exhibit a nodular morphology with an average diameter around 1–2 µm. Tensile properties were importantly diminished beyond 4 wt% but

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Riches, S. T., K. Cannon, C. Johnston, et al. "Application of High Temperature Electronics Packaging Technology to Signal Conditioning and Processing Circuits." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (2010): 000089–96. http://dx.doi.org/10.4071/hitec-sriches-tp11.

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The requirement to install electronic power and control systems in high temperature environments has posed a challenge to the traditional limit of 125°C for high temperature exposure of electronics systems. The leap in operating temperature to above 200°C in combination with high pressures, vibrations and potentially corrosive environments means that different semiconductors, passives, circuit boards and assembly processes will be needed to fulfil the target performance specifications. Bare die mounted onto ceramic and insulated metal substrates can withstand higher temperatures than soldered

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12

S., Madhavan Nampoothiri, Sabu Sebastian M., and Sajith Kumar P.C. "Implementation of Peltier Cooling in Hermetically Sealed Electronic Packaging Unit for Sub-sea Vessel." Defence Science Journal 68, no. 3 (2018): 326. http://dx.doi.org/10.14429/dsj.68.12149.

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This paper presents the methodology adopted for implementation of Peltier cooling in hermetically sealed electronic packaging units used in sub-sea vessels. In sub-sea vessels, sonar front-end electronics is packaged in hermetically sealed electronic packaging units. The thermal design of the unit is a highly challenging task considering the heat dissipation of 300W from the electronics, non-availability of chilled air for cooling and IP68 sealing requirements. Cooling fans cannot be integrated, since these units are to be placed in acoustically sensitive pressure capsule area of the subsea ve

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Gumyusenge, Aristide, and Jianguo Mei. "High Temperature Organic Electronics." MRS Advances 5, no. 10 (2020): 505–13. http://dx.doi.org/10.1557/adv.2020.31.

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ABSTRACTThe emerging breakthroughs in space exploration, smart textiles, and novel automobile designs have increased technological demand for high temperature electronics. In this snapshot review we first discuss the fundamental challenges in achieving electronic operation at elevated temperatures, briefly review current efforts in finding materials that can sustain extreme heat, and then highlight the emergence of organic semiconductors as a new class of materials with potential for high temperature electronics applications. Through an overview of the state-of-the art materials designs and pr

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Park, Won Ho, Tamer Ali, and C. K. Ken Yang. "Analysis of Refrigeration Requirements of Digital Processors in Subambient Temperatures." Journal of Microelectronics and Electronic Packaging 7, no. 4 (2010): 197–204. http://dx.doi.org/10.4071/imaps.257.

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The total power consumption for high-performance computing systems is a serious concern for designers of integrated circuits and systems. It is well known that cooling the operating temperature results in reduced electronic power and/or speed gains. However, total power dissipation includes both electronic power and the refrigeration power. This study explores the optimal operating temperatures and the amount of total power reduction at subambient temperatures. This paper presents a realistic system-level model that includes both the electronic and the refrigeration systems. Analysis using the

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15

Grzybowski, R. R., and B. Gingrich. "High Temperature Silicon Integrated Circuits and Passive Components for Commercial and Military Applications." Journal of Engineering for Gas Turbines and Power 121, no. 4 (1999): 622–28. http://dx.doi.org/10.1115/1.2818517.

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Advances in silicon-on-insulator (SOI) integrated circuit technology and the steady development of wider band gap semiconductors like silicon carbide are enabling the practical deployment of high temperature electronics. High temperature civilian and military electronics applications include distributed controls for aircraft, automotive electronics, electric vehicles and instrumentation for geothermal wells, oil well logging, and nuclear reactors. While integrated circuits are key to the realization of complete high temperature electronic systems, passive components including resistors, capaci

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Habibi, Mohammad Hossein, and Elahe Shojaee. "Synthesis of cobalt-orthotitanate inverse spinel nano particles via a novel low temperature solvothermal method: structural, opto-electronical, morphological, surface characterization and photo-catalytical application in mineralization of Remazol Red RB 133." Journal of Materials Science: Materials in Electronics 28, no. 15 (2017): 10838–46. http://dx.doi.org/10.1007/s10854-017-6861-2.

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Kumar, Rakesh. "Enhancing Performance and Reliability of High Temperature Electronics through Thermally-Stable Parylene HT." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (2014): 000256–62. http://dx.doi.org/10.4071/hitec-wp24.

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Significant performance and reliability challenges exist for high temperature electronics used in many applications, including those used in down-hole, under-bonnet, well-logging and aero-engine applications. Under high temp operating environments, the life expectancy of electronic components and systems reduces exponentially if they are not designed, packaged and protected appropriately to tolerate or negate the impact of high temperatures. This presentation highlights specific materials and conformal coating issues that play a significant role in addressing above challenges and presents resu

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Kumar, Rakesh. "A high temperature nano/micro vapor phase conformal coating for electronics applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (2015): 000083–90. http://dx.doi.org/10.4071/hiten-session3a-paper3a_1.

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Through characterization of dielectric and other properties at high temperatures, this work describes the development of a high temperature and UV stable nano/micro vapor phase deposited polymer coating for providing electrical insulation and protection of various electronics from chemical corrosion and other harsh environmental effects. Packaging, protection and reliability of various electronic devices and components, including PCBs, MEMS, optoelectronic devices, fuel cell components and nanoelectronic parts, are becoming more challenging due to the long-term performance requirements on devi

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Borukhovich, Arnold S. "Europium monoxide as a basis for creating a high-temperature spin injector in the semiconductor spintronics." Modern Electronic Materials 6, no. 3 (2020): 113–23. http://dx.doi.org/10.3897/j.moem.6.54583.

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The results of the creation of a high-temperature spin injector based on EuO: Fe composite material are discussed. Their magnetic, electrical, structural and resonance parameters are given in a wide range of temperatures and an external magnetic field. A model calculation of the electronic spectrum of the solid solution Eu–Fe–O, responsible for the manifestation of the outstanding properties of the composite, is performed. The possibility of creating semiconductor spin electronics devices capable of operating at room temperature is shown.

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Borukhovich, Arnold S. "Europium monoxide as a basis for creating a high-temperature spin injector in the semiconductor spintronics." Modern Electronic Materials 6, no. 3 (2020): 113–23. http://dx.doi.org/10.3897/j.moem.6.3.54583.

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The results of the creation of a high-temperature spin injector based on EuO: Fe composite material are discussed. Their magnetic, electrical, structural and resonance parameters are given in a wide range of temperatures and an external magnetic field. A model calculation of the electronic spectrum of the solid solution Eu–Fe–O, responsible for the manifestation of the outstanding properties of the composite, is performed. The possibility of creating semiconductor spin electronics devices capable of operating at room temperature is shown.

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Fraley, John R., Edgar Cilio, and Bryon Western. "Advanced Applications of High Temperature Magnetics." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (2013): 000046–55. http://dx.doi.org/10.4071/hiten-ma17.

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In recent years, high temperature magnetic structures have been developed and used for inductors and transformers in high temperature applications ranging from power electronics to wireless telemetry systems. Research in the high temperature magnetics field has led to the development of more advanced magnetic structures that can enable diverse applications ranging from regulators to amplifiers, with far reaching implications for the high temperature electronics community. Current high temperature electronics have shown potential in lab and rig tests, but high temperature electronics systems su

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22

Harris, Stuart A., and John H. Pedersen. "Comparison of three methods of calculating air temperature from electronic measurements." Zeitschrift für Geomorphologie 39, no. 2 (1995): 203–10. http://dx.doi.org/10.1127/zfg/39/1995/203.

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Wickham, Martin, Kate Clayton, Ana Robador, et al. "Development of a High Temperature Interconnect Solution as an Alternative to High Lead or Gold Content Solders." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (2016): 000196–206. http://dx.doi.org/10.4071/2016-hitec-196.

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AbstractA collaborative research programme between project partners Microsemi, the National Physical Laboratory (NPL) and Gwent Electronic Materials (GEM), has successfully developed innovative materials specifically designed to offer an alternative for high Pb or Au content materials to increase the operating temperature of electronic assemblies. Currently, for electronic assemblies to operate at high temperature, they must use a high lead solder or a very expensive gold based solder to withstand these temperatures. The ELCOSINT project has developed an inexpensive lead-free alternative for j

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Zhang, ZiHao, Jebreel M. Salem, and Dong Sam Ha. "A High Temperature 4H-SiC Voltage Reference for Depletion Mode GaN-Based Circuits." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2017, HiTEN (2017): 000118–21. http://dx.doi.org/10.4071/2380-4491.2017.hiten.118.

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Abstract High temperature electronics are highly demanded for many applications such as automotive, space, and oil and gas exploration. Electronic circuits for those applications are required to operate reliably without using bulky cooling systems. Circuits based on silicon (Si) suffer from high leakage currents at high temperatures. Silicon Carbide (SiC) circuits, on the other hand, are suitable for high temperature applications due to the wide bandgap and offer high breakdown voltage and low leakage current. This paper presents a negative voltage reference for high temperature applications u

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Mirgkizoudi, M., C. Liu, P. Conway, and S. Riches. "Reliability of wire-bonded electronic devices in combined high temperature and vibrational environments." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (2013): 000220–28. http://dx.doi.org/10.4071/hiten-wa13.

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High temperature electronic systems need to operate in extreme conditions that exceed the current levels specified by the military and aerospace standards. In high temperature and wide operating temperature applications, electronics can suffer from failure modes caused by a combination of environmental and operational loadings such as temperature, vibration, humidity, pressure, external stresses, etc. This work reports the findings and observations of the investigation of the combined effects of thermal and vibrational environments on wire-bonded interconnections used in high temperature elect

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Son, In-Suh, and Dong-Kil Shin. "OS14-3 Adhesion of Thin Film for Electronic Package at Elevated Temperature(Semiconductor Devices and Electronic Packaging 1,OS14 Electronic and photonic packages,APPLICATIONS)." Abstracts of ATEM : International Conference on Advanced Technology in Experimental Mechanics : Asian Conference on Experimental Mechanics 2015.14 (2015): 209. http://dx.doi.org/10.1299/jsmeatem.2015.14.209.

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Riches, S. T., C. Johnston, M. Sousa, and P. Grant. "High Temperature Endurance of Packaged SOI Devices for Signal Conditioning and Processing Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (2011): 000251–54. http://dx.doi.org/10.4071/hiten-paper8-sriches.

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Silicon on Insulator (SOI) device technology is fulfilling a niche requirement for electronics that functions satisfactorily at operating temperatures of &gt;200°C. Most of the reliability data on the high temperature endurance of the devices is generated on the device itself with little attention being paid to the packaging technology around the device. Similarly, most of the reliability data generated on high temperature packaging technologies uses testpieces rather than real devices, which restricts any conclusions on long term electrical performance. This paper presents results of high

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Rüscher, Claus H. "Temperature-dependent absorption of biotite: small-polaron hopping and other fundamental electronic excitations." European Journal of Mineralogy 24, no. 5 (2012): 815–20. http://dx.doi.org/10.1127/0935-1221/2012/0024-2200.

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Quintero, Pedro O., and F. Patrick McCluskey. "Silver-Indium Transient Liquid Phase Sintering for High Temperature Die Attachment." Journal of Microelectronics and Electronic Packaging 6, no. 1 (2009): 66–74. http://dx.doi.org/10.4071/1551-4897-6.1.66.

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The demand for electronics capable of operating at temperatures above the traditional 125°C limit continues to increase. Devices based on wide band gap semiconductors have been demonstrated to operate at temperatures up to 500°C, but packaging remains a major hurdle to product development. Recent regulations, such as RoHS and WEEE, increase the complexity of the packaging task as they prohibit the use of certain materials in electronic products such as lead (Pb), which has traditionally been used in high temperature solder die attach. In this investigation, an Ag-In solder paste is presented a

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Williams, Jennifer, and Johnson Matthey. "High Temperature Protection against Unwanted Species within Hermetic Packaging." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (2015): 000116–22. http://dx.doi.org/10.4071/hiten-session3b-paper3b_3.

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The need for electronic applications to be able to withstand high temperatures has become more prevalent in recent years. With drilling in the oil and gas industry getting deeper, the operating temperatures are getting higher, with typical geothermal gradients of 25 °C/km. Temperatures up to 250 °C are often seen by drilling operations, which is putting a greater strain on the electronics and associated packaging. Standard methods of cooling are not viable for these harsh environments, so new technology is required to negate the effects of the extreme temperatures. As well as the use of high t

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KE, Haotao, and Douglas C. Hopkins. "Development of Printed Power Packaging for a High Voltage SiC Module." International Symposium on Microelectronics 2012, no. 1 (2012): 000955–60. http://dx.doi.org/10.4071/isom-2012-wp55.

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Due to rapidly developing post silicon power devices, in particular SiC and GaN, three primary parameters in power packaging: temperature, voltage and current, are much more difficult to manage. The SiC devices are being developed for high voltage (&gt;15kV). The GaN devices will have extremely low internal resistance, operate at extreme current densities (≫10A/mm2), and can account for &lt;50% of the resistance in a power module. Both devices can operate at high temperatures (&gt;300°C) and &gt;10-times frequency compared to Si. The traditional power electronics packaging appr

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Ibrahim, Ali, Zoubir Khatir, and Laurent Dupont. "Characterization and Aging Test Methodology for Power Electronic Devices at High Temperature." Advanced Materials Research 324 (August 2011): 411–14. http://dx.doi.org/10.4028/www.scientific.net/amr.324.411.

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Power electronic modules are key elements in the chain of power conversion. The application areas include aerospace, aviation, railway, electrical distribution, automotive, home automation, oil industry ... But the use of power electronics in high temperature environments is a major strategic issue in the coming years especially in transport. However, the active components based on silicon are limited in their applications and not suitable for those require both high voltages and high ambient temperatures. The materials with wide energy gap like SiC, GaN and diamond, have the advantage of bein

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Ohme, Bruce W., and Mark R. Larson. "Analog Component Development for 300°C Sensor Interface Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, HITEC (2012): 000199–206. http://dx.doi.org/10.4071/hitec-2012-wp11.

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The development of Enhanced Geothermal Systems (EGS) for base-load electrical power generation will require electronics for sensing and control during exploration and drilling and also during production. The operating temperature environments for these applications will generally be more extreme than those encountered by electronics currently deployed for oil and gas development and production monitoring. To address this requirement, electronic components have been designed and fabricated for operation at temperatures of 300°C. These integrated circuits use silicon-on-insulator (SOI) fabricati

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Kumar, Rakesh. "A High Temperature and UV Stable Vapor Phase Polymer for Electronics Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (2011): 000207–14. http://dx.doi.org/10.4071/hiten-paper3-rkumar.

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A recent development in the area of high temperature and UV stable polymers, which offers solutions to many existing packaging and reliability challenges of electronics industry, is described. Packaging, protection and reliability of various electronic devices and component, including PCB's, MEMS, optoelectronic devices, fuel cell components and nano-electronic parts are, becoming more challenging due to their long-term performance requirements. This high temperature polymer, named Parylene HT, offers solutions to many existing protective, packaging and reliability issues in the electronics an

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Kumar, Rakesh. "Parylene HT®: A High Temperature Vapor Phase Polymer for Electronics Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (2010): 000108–13. http://dx.doi.org/10.4071/hitec-rkumar-tp13.

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A development in the area of high temperature polymers, which offers solutions to many existing packaging and reliability challenges of electronics industry, is described. Packaging, protection and reliability of various electronic devices and components that include PCB's, MEM's, optoelectronic devices, fuel cell components and nano-electronic parts are becoming more challenging due to their long-term performance requirements. Parylene HT offers solutions to many existing packaging and reliability issues of electronics industry in part because of its excellent electrical & mechanical prop

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Lim, John Victor M., Noel B. Linsangan, Febus Reidj G. Cruz, and Wen-Yaw Chung. "Temperature Compensated Electronic Nose for Fruit Ripeness Determination Using Component Correction Principal Component Analysis." International Journal of Computer and Communication Engineering 5, no. 5 (2016): 331–40. http://dx.doi.org/10.17706/ijcce.2016.5.5.331-340.

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Hunter, Gary W., Philip G. Neudeck, Robert S. Okojie, Glenn M. Beheim, J. A. Powell, and Liangyu Chen. "An Overview of High-Temperature Electronics and Sensor Development at NASA Glenn Research Center." Journal of Turbomachinery 125, no. 4 (2003): 658–64. http://dx.doi.org/10.1115/1.1579508.

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This paper gives a brief overview of the status of high-temperature electronics and sensor development at NASA Glenn Research Center supported in part or in whole by the Ultra Efficient Engine Technology Program. These activities contribute to the long-term development of an intelligent engine by providing information on engine conditions even in high temperature, harsh environments. The technology areas discussed are: 1) high-temperature electronics, 2) sensor technology development (pressure sensor and high-temperature electronic nose), 3) packaging of harsh environment devices and sensors,

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Uzair, Bushra, Ayesha Liaqat, Haroon Iqbal, et al. "Green and Cost-Effective Synthesis of Metallic Nanoparticles by Algae: Safe Methods for Translational Medicine." Bioengineering 7, no. 4 (2020): 129. http://dx.doi.org/10.3390/bioengineering7040129.

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Metal nanoparticles (NPs) have received much attention for potential applications in medicine (mainly in oncology, radiology and infectiology), due to their intriguing chemical, electronical, catalytical, and optical properties such as surface plasmon resonance (SPR) effect. They also offer ease in controlled synthesis and surface modification (e.g., tailored properties conferred by capping/protecting agents including N-, P-, COOH-, SH-containing molecules and polymers such as thiol, disulfide, ammonium, amine, and multidentate carboxylate), which allows (i) tuning their size and shape (e.g.,

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Slater, Conor, Fabrizio Vecchio, Thomas Maeder, and Peter Ryser. "Characterisation of test vehicle for in-situ measurement of die attach thermal conductivity." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, CICMT (2012): 000030–34. http://dx.doi.org/10.4071/cicmt-2012-ta15.

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The continuing trend in the automotive and aviation industries to reduce complexity of electronic systems by removing cooling results in a need for high temperature electronics and associated packaging technologies. To ensure reliability over long periods of time the degradation of the packaging materials should be characterised. Epoxies show great promise as a reliable die attach solution for high temperature electronics due to their high bond strength, resistance to fatigue and chemical stability at temperatures up to 250°C. This work presents a method and test vehicle for measuring the ther

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Kaplas, Tommi, Vytautas Jakstas, Andrius Biciunas, et al. "Effect of High-Temperature Annealing on Graphene with Nickel Contacts." Condensed Matter 4, no. 1 (2019): 21. http://dx.doi.org/10.3390/condmat4010021.

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Graphene has shown great potential for ultra-high frequency electronics. However, using graphene in electronic devices creates a requirement for electrodes with low contact resistance. Thermal annealing is sometimes used to improve the performance of contact electrodes. However, high-temperature annealing may introduce additional doping or defects to graphene. Moreover, an extensive increase in temperature may damage electrodes by destroying the metal–graphene contact. In this work, we studied the effect of high-temperature annealing on graphene and nickel–graphene contacts. Annealing was done

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Kagadi, Matin, Girish Tembhare, Vinaay Patil, and Sujay Shelke. "Optimization of Self Activating Bi-Metallic Valve Using Thermo – Structural Coupled FEA." Advanced Materials Research 622-623 (December 2012): 147–51. http://dx.doi.org/10.4028/www.scientific.net/amr.622-623.147.

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Besides relying on electronically actuated valves, there is a need to have a mechanically actuated valve and a warning system as second layer of safety in-case of electronic malfunction. The specific process for which optimization is carried out, is the process of nitrous oxide generation from ammonium nitrate. The key challenge in the process was maintaining temperatures below 200°C, as above this temperature ammonium nitrate becomes explosive and hence safety risks are involved. The secondary objective was to maintain temperatures above 170°C, as below this temperature the reaction does not

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Slater, Conor, Radisav Cojbasic, Thomas Maeder, Yusuf Leblebici, and Peter Ryser. "Packaging technologies for high temperature control electronics." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (2013): 000184–92. http://dx.doi.org/10.4071/hiten-tp15.

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Current low temperature electronics (&lt;175°C) with logical functions (CPUs, MCUs) have exceptional levels of reliability in terms of packaging, stemming from decades of research. However, electronics that operate at higher temperatures (&gt;175°C) for prolonged periods of time require packaging technologies that have to tackle many new problems. At high temperatures traditionally used materials such as organic circuit boards, adhesives and standard solders degrade rapidly or undergo changes in structure and properties. An even more critical issue than high-temperature survivability i

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Zuntu Abdullahi, Yusuf, Zeynep Demir Vatansever, Ethem Aktürk, Ümit Akıncı, and Olcay Üzengi Aktürk. "A tetragonal phase Mn2B2 sheet: a stable room temperature ferromagnet with sizable magnetic anisotropy." Physical Chemistry Chemical Physics 22, no. 19 (2020): 10893–99. http://dx.doi.org/10.1039/d0cp00503g.

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Glass, J. T., B. A. Fox, D. L. Dreifus, and B. R. Stoner. "Diamond for Electronics: Future Prospects of Diamond SAW Devices." MRS Bulletin 23, no. 9 (1998): 49–55. http://dx.doi.org/10.1557/s0883769400029377.

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From a commercialization standpoint, electronic applications have been particularly elusive for diamond. Market estimates of $560 million per year by the year 2000 indicate the original enthusiasm in this area. Now such projections seem unreasonably optimistic, and even a niche commercial application in the area of electronics would be considered a success. However when taken in a broader context, this extended time frame for commercialization is not at all unusual for new technologies, and many new advances have continued to bolster the enthusiasm of diamond electronics research groups. Diamo

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Whittle, Thomas, and Siegbert Schmid. "Diffraction Studies of Tungsten Bronze Type Relaxor Ferroelectrics." Acta Crystallographica Section A Foundations and Advances 70, a1 (2014): C78. http://dx.doi.org/10.1107/s2053273314099215.

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Ferroelectric materials are essential for modern electronic applications, from consumer electronics to sophisticated technical instruments. Relaxor ferroelectric materials provide the advantage of high dielectric constants over broad temperature ranges not seen in traditional ferroelectrics. Tungsten bronze type compounds have been shown to display a variety of industrially relevant optical and electronic properties amongst others. There is a fundamental relationship between the physical properties displayed by ferroelectrics and the crystal structures in which they form. Of particular interes

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Kirschman, Randall K., Witold M. Sokolowski, and Elizabeth A. Kolawa. "Die Attachment for −120°C to +20°C Thermal Cycling of Microelectronics for Future Mars Rovers—An Overview1." Journal of Electronic Packaging 123, no. 2 (2000): 105–11. http://dx.doi.org/10.1115/1.1347996.

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Active thermal control for electronics on Mars rovers imposes a serious penalty in weight, volume, power consumption, and reliability. Thus, we propose that thermal control be eliminated for future rovers. From a functional standpoint there is no reason that the electronics could not operate over the entire temperature range of the Martian environment, which can vary from a low of ≈−90°C to a high of ≈+20°C during the Martian night and day. The upper end of this range is well within that for conventional electronics. Although the lower end is considerably below that for which conventional—even

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Riches, S. T., C. Johnston, and A. Lui. "Realisation of High Temperature Electronics Packaging Technology for Sensor Conditioning and Processing Applications." International Symposium on Microelectronics 2012, no. 1 (2012): 000192–99. http://dx.doi.org/10.4071/isom-2012-ta61.

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The requirement to install electronic power and control systems in high temperature environments in aero-engines and in down-well exploration has posed a challenge to the traditional limit of 125°C of electronics systems. The leap in operating temperature to above 200°C in combination with high pressures, vibrations and potentially corrosive environments means that different semiconductors, passives, circuit boards and assembly processes will be needed to fulfil target performance specifications. Silicon on Insulator (SOI) device technology has been shown to be capable of functioning satisfact

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Riches, S. T., C. Warn, K. Cannon, G. Rickard, L. Stoica, and C. Johnston. "Design and Assembly of High Temperature Distributed Aero-engine Control System Demonstrator." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (2014): 000285–90. http://dx.doi.org/10.4071/hitec-tha12.

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This paper covers the development of a distributed high temperature electronics demonstrator for integration with sensor elements to provide digital outputs that can be used by the FADEC (Full Authority Digital Electronic Control) system or the EHMS (Engine Health Monitoring System) on an aircraft engine. This distributed electronics demonstrator eliminates the need for the FADEC or EHMS to process the sensor signal, which will assist in making the overall system more accurate and efficient in processing only digital signals. This will offer weight savings in cables, harnesses and connector pi

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Cheli, Lapo, and Carlo Carcasci. "Modelling and analysis of a liquid-cooled system for thermal management application of an electronic equipment." E3S Web of Conferences 197 (2020): 10008. http://dx.doi.org/10.1051/e3sconf/202019710008.

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The removal of heat from electronic components, increasingly miniaturized with high power dissipation per unit volume, is a significant industrial problem to be resolved, to avoid failures due to excessive temperatures and besides to maintain performance and operating conditions. This article describes the development of a one-dimensional thermodynamic model to simulate the cooling of electronic chips belonging to inverters for stationary PV solar arrays; these are typically located in very different environments, including deserts or very hot areas, so the operating life of theirs inverter un

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Taran, Mikhail N., and Klaus Langer. "Electronic absorption spectra of Fe3+ in andradite and epidote at different temperatures and pressures." European Journal of Mineralogy 12, no. 1 (2000): 7–15. http://dx.doi.org/10.1127/ejm/12/1/0007.

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