Relevant bibliographies by topics / Electrostatic chuck

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Electrostatic chuck'

Author: Grafiati
Published: 3 June 2025
Last updated: 31 July 2025

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Journal articles on the topic "Electrostatic chuck"

1

Kalkowski, Gerhard, Stefan Risse, Sandra Müller, and Gerd Harnisch. "Electrostatic chuck for EUV masks." Microelectronic Engineering 83, no. 4-9 (2006): 714–17. http://dx.doi.org/10.1016/j.mee.2006.01.049.

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Wang, Xing Kuo, Jia Cheng, Ke Sheng Wang, et al. "Modeling of Electrostatic Chuck and Simulation of Electrostatic Force." Applied Mechanics and Materials 511-512 (February 2014): 588–94. http://dx.doi.org/10.4028/www.scientific.net/amm.511-512.588.

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Electrostatic chuck (ESC) is one of the key components in IC manufacturing process, which applies the principle of electrostatic adsorption to clamp the wafer on its surface. In such a system, electrostatic force is considered as one of the most important indicators. The method of modeling and simulation of electrostatic force by COMSOL software is proposed, and the accurateness is validated by comparing the results with those from reference. Then, the simulation of ESC in real manufacturing process is finished using the above method, which focuses on the effects of dielectric materials and vo
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Watanabe, Toshiya, Tetsuo Kitabayashi, and Chiaki Nakayama. "Electrostatic Force and Absorption Current of Alumina Electrostatic Chuck." Japanese Journal of Applied Physics 31, Part 1, No. 7 (1992): 2145–50. http://dx.doi.org/10.1143/jjap.31.2145.

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Kalkowski, G., S. Risse, and V. Guyenot. "Electrostatic chuck behaviour at ambient conditions." Microelectronic Engineering 61-62 (July 2002): 357–61. http://dx.doi.org/10.1016/s0167-9317(02)00501-4.

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Choi, Young Min, Jong Ung Kim, Beyong Hwan Ryu, Hyun Ju Chang, Chung Heop Kwak, and In Ho Kim. "Ceramic Electrode Materials for Electrostatic Chuck Applications." Solid State Phenomena 124-126 (June 2007): 791–94. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.791.

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In general, Electrostatic chuck (ESC) was used to fix and clamp the silicon wafer with electrostatic force in the semiconductor fabrication process. Recently, due to their excellent chemical and plasma stability and high thermal conductivity, sintered ceramics has been used as an insulator material in the configuration of ESC. However, metals of high melting point, such as Mo, W, still used for electrode materials. Because of the thermal mismatch between metal electrode and ceramic insulator, micro cracks were produced at the interface during sintering process of ceramic or its operation proce
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Saito, Shigeki, Fumiaki Soda, Radon Dhelika, Kunio Takahashi, Wataru Takarada, and Takeshi Kikutani. "Compliant electrostatic chuck based on hairy microstructure." Smart Materials and Structures 22, no. 1 (2012): 015019. http://dx.doi.org/10.1088/0964-1726/22/1/015019.

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Watanabe, Toshiya, Tetuo Kitabayashi, and Chiaki Nakayama. "Relationship between Electrical Resistivity and Electrostatic Force of Alumina Electrostatic Chuck." Japanese Journal of Applied Physics 32, Part 1, No. 2 (1993): 864–71. http://dx.doi.org/10.1143/jjap.32.864.

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Watanabe, T., T. Kitabayashi, and C. Nakayama. "Electrostatic charge distribution in the dielectric layer of alumina electrostatic chuck." Journal of Materials Science 29, no. 13 (1994): 3510–16. http://dx.doi.org/10.1007/bf00352057.

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Kim, Hyun Tae, Nagendra Prasad Yerriboina, Hee Jin Song, and Jin Goo Park. "Removal of CrN Contamination from EUV Mask Backside Using Dry Cleaning." Solid State Phenomena 282 (August 2018): 59–63. http://dx.doi.org/10.4028/www.scientific.net/ssp.282.59.

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For EUV lithography, a reflective mask is essential because of use of the strong energy, wavelength of 13.5 nm. The EUV mask consists of multi-layered, multi-material structure and is susceptible to various contaminants. Since EUV lithography process should be used in a high vacuum environment, an electrostatic chuck (ESC) is used to fix or hold the EUV mask using electrostatic force. In general, in order to use ESC chuck, it needs a thin conductive layer (CrN layer) on the backside. However, the contact points of the electrostatic pin chuck can make exfoliation of conductive CrN layer produci
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Choi, Jae Seok, Jeong Hoon Yoo, Sang Joon Hong, Tae Hyun Kim, and Sung Jin Lee. "Physical Modeling and Characteristics of a Johnsen-Rahbek Type Electrostatic Chuck." Key Engineering Materials 326-328 (December 2006): 1221–24. http://dx.doi.org/10.4028/www.scientific.net/kem.326-328.1221.

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Generally, a Johnsen-Rahbek (J-R) type electrostatic chuck (ESC) generates higher attractive force than a Coulomb type ESC. Attractive force in a J-R type ESC is caused by the high electrical resistance that occurs in the contact region between an object plate and a dielectric layer. This research tries the simple geometrical modeling of the contact surface and simulates the contact resistance, the attractive force and the response time according to the variation of contact surface shape. In the latter half of this research, the simulation for a pin-combined chuck is accomplished using a simil
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Dissertations / Theses on the topic "Electrostatic chuck"

1

lin, Chih-lung, and 林志龍. "Measurement and development of a bipolar electrostatic chuck in serial plasma processes." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/88747552626760984230.

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碩士<br>國立臺灣大學<br>應用力學研究所<br>93<br>The bipolar electrostatic chuck for silicon wafers has been developed for used in serial plasma process. The advantage of the bipolar electrostatic chuck is that attractions appear without plasma, so we take advantage of it in industry gradually. The bipolar electrostatic chuck’s proper proportion between the top plate and the bottom plate, material of plates, roughness of plate’s surface, marking of plate’s surface, the choice of the gelatin, the disposal of helium’s pressure between the wafer and the bipolar electrostatic chuck and the rear of the bipolar ele
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Lai, Chien-Yu, and 賴建裕. "Analysis of Heat Transfer Model between the Wafer and the Electrostatic Chuck." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/46633155022355525621.

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碩士<br>國立臺灣大學<br>應用力學研究所<br>91<br>The electrostatic chuck for silicon wafers has been developed for used in serial plasma process. The pattern of the electrostatic chuck’s surface and the cooling gas inside have significant influence to the overall heat transfer between the wafer and the susceptor. In this work, the heat transfer model for the wafer and susceptor of a electrostatic wafer holding system is established to investigate the wafer temperature uniformity. The effects of several parameters including input heat flux, the pattern of the chuck surface and the overhang ratio on the wafer t
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Hsu, Kuo-Chan, and 徐國展. "Multiphysics Modeling and Analysis of Heat Transfer of Wafer on Electrostatic Chuck." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/94017791514088102106.

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碩士<br>國立臺灣大學<br>應用力學研究所<br>103<br>The complete heat transfer path on the AlN and Al2O3 electrostatic chuck (ESC), which were utilized under the various operational conditions, is studied for the potential improvement on the temperature uniformity of the 12-inch wafer. In addition, an identical study on the expanded chuck (299mm) is also carried out for a comparison of the original chuck (293mm). An equivalent thermal circuit analogical to an electrical circuit was illustrated and formulated in terms of variables observed to offer a simple calculation toward a potential optimization. In additi
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Chen, Wei-Min, and 陳韋閔. "Study on the Electrode Voltage to the Wafer-center Deviation During Wafer Release in an Electrostatic Chuck (ESC)." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/73994983839499379614.

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碩士<br>國立中興大學<br>電機工程學系所<br>101<br>Among the wafer fabricate processing, while wafer enter process chamber, the wafer need fixed to the holder in chamber then begin to process. However, the normal Mechanical Chuck had problems of wafer edge losses and deformation of the wafer surface, after that time, the Vacuum Chuck developed, but it also had unable chuck wafer efficaciously and positively at vacuum chamber issue. So the method presently applied of wafer chuck in equipment by industry, usually using Electrostatic Chuck (ESC) to clamp wafer in the process chamber holder. But while electrosta
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Kun-Zhi, Yen, and 顏&;#22531;至. "Using the Taguchi Method Experimental Analysis of Electrostatic Chuck(ESC) from Wafer Process to Improve the Offset Parameter Optimization Study." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/02139995702439965725.

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碩士<br>中興大學<br>精密工程學系所<br>103<br>In the wafer fabrication process, there is a need for the wafer to be restrain within the chamber, the most common practice is the usage of electrostatic chuck (ESC) to hold the wafer. ESC makes use of the static energy between the wafer &; chuck to hold the wafer, the principles is to apply voltage to the chuck electrode, causing the chuck to produce static energy,resulting in a chucking force between the wafer &; ESC surface thus holding the wafer stationary. After wafer processing is completed, applying a reverse polarity voltage will neutralize the wafer sur
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Kun-Zhi, Yen, and 顏堃至. "Using the Taguchi Method Experimental Analysis of Electrostatic Chuck(ESC) from Wafer Process to Improve the Offset Parameter Optimization Study." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/95397418553353372156.

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碩士<br>國立中興大學<br>精密工程學系所<br>103<br>In the wafer fabrication process, there is a need for the wafer to be restrain within the chamber, the most common practice is the usage of electrostatic chuck (ESC) to hold the wafer. ESC makes use of the static energy between the wafer & chuck to hold the wafer, the principles is to apply voltage to the chuck electrode, causing the chuck to produce static energy,resulting in a chucking force between the wafer & ESC surface thus holding the wafer stationary. After wafer processing is completed, applying a reverse polarity voltage will neutralize the wafer sur
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Book chapters on the topic "Electrostatic chuck"

1

Choi, Young Min, Jong Ung Kim, Beyong Hwan Ryu, Hyun Ju Chang, Chung Heop Kwak, and In Ho Kim. "Ceramic Electrode Materials for Electrostatic Chuck Applications." In Solid State Phenomena. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.791.

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Choi, Jae Seok, Jeong Hoon Yoo, Sang Joon Hong, Tae Hyun Kim, and Sung Jin Lee. "Physical Modeling and Characteristics of a Johnsen-Rahbek Type Electrostatic Chuck." In Experimental Mechanics in Nano and Biotechnology. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-415-4.1221.

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James, Steffan, and Hefin Rowlands. "A Review of Failure Mode and Effects Analysis (FMEA) for Sustainable Manufacturing and Improvement in Electrostatic Chuck Manufacture and Operation." In Sustainable Design and Manufacturing. Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-19-9205-6_15.

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Fernandez, Mini, and D. Keerthana Goud. "In-Silico Studies of RBP7, CALML3, C35, LGALSL,S100A3 Proteins Involved in Breast Cancer." In Convergence of Technology & Biology - Transforming Life Sciences. Shanlax Publications, 2025. https://doi.org/10.34293/ctbtls.2025.ch013.

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The most important reason for death caused by cancer in females around the globe is breast cancer. Early diagnosis, proper treatment are fundamental in order to enhance the outcomes of patients. This study aims to investigate various proteins that contribute to the development and progression of breast cancer. Proteins that were chosen for this work are: Retinoid-binding protein 7, Calmodulin-like protein 3, C35 protein, Galectin-related protein and S100-A3 protein. In addition, three drugs: Raloxifene, Tamoxifen, and Fulvestrant were chosen to check if they have therapeutic effects on the abo
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"Fig. 9 Freeze fracture electron micrograph of ELimixed phosphoinositides (4:1) liposomes after 10 passes through a0.1 pirn polycarbonate filter. growth, particularly during storage, would be undesirable in most products. Fortunately the tendency of liposomes to aggregate and fuse can be controlled by the inclusion of small amounts of negatively charged lipids such as PS or PG or positively charged amphiphiles such as stearylamine in the formulation. Knowing the number and the sign of charged groups added and the valency and concentration of electrolytes in the me-dium, the magnitude of the electrostatic forces generated by these charged groups can be closely approximated by using the double layer theory. These results can then be correlated with physical stability of liposomes and used to guide formulation efforts. The amount of charged component and ionic conditions in a particular liposome dos-age form can be adjusted to produce a high-enough zeta potential to inhibit close ap-proach of vesicles and prevent their aggregation. In practice it is usually necessary to determine empirically the magnitude of the zeta potential required to prevent aggrega-tion in a particular system. However, once this has been done, it is possible to use the zeta potential as a quality control check to insure that each batch of liposomes contains sufficient charged groups to avoid aggregation during storage." In Pharmaceutical Dosage Forms. CRC Press, 1998. http://dx.doi.org/10.1201/9781420000955-15.

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Conference papers on the topic "Electrostatic chuck"

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Thiruchelvam, Rajkumar, Benedict Cheong, and Woei Hau Wong. "Copper Residue Removal from Electrostatic Chuck to Mitigate Helium Leak Faults Using Enhanced In-Situ Chamber Clean : EO: Equipment Optimization." In 2025 36th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). IEEE, 2025. https://doi.org/10.1109/asmc64512.2025.11010796.

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Ling, Jie, Yu Yao, Dongmei Zhai, Songran Zhu, and Changxin Xing. "Wafer Position Recognition Technology on Electrostatic Chucks." In 2025 Conference of Science and Technology of Integrated Circuits (CSTIC). IEEE, 2025. https://doi.org/10.1109/cstic64481.2025.11017778.

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Berengueres, Jose, Masataka Urago, Shigeki Saito, Kenjiro Tadakuma, and Hiroyuki Meguro. "Gecko inspired Electrostatic Chuck." In 2006 IEEE International Conference on Robotics and Biomimetics. IEEE, 2006. http://dx.doi.org/10.1109/robio.2006.340368.

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Feng, Peng, Taide Tan, Yujie Ji, Yaxin Zhang, and Toshihisa Nozawa. "Review and Thermo-Fluids Numerical Modeling on Electrostatic Chuck." In 2022 China Semiconductor Technology International Conference (CSTIC). IEEE, 2022. http://dx.doi.org/10.1109/cstic55103.2022.9856823.

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Kalkowski, Gerhard, Thomas Peschel, Geoffrey Hassall, Helder Alves, and Stefan Risse. "Investigations into an electrostatic chuck design for 450mm Si wafer." In SPIE Advanced Lithography, edited by Alexander Starikov. SPIE, 2012. http://dx.doi.org/10.1117/12.916380.

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Dicks, Gerald A., Andrew R. Mikkelson, and Roxann L. Engelstad. "The influence of an electrostatic pin chuck on EUV mask flatness." In Photomask Technology, edited by Wolfgang Staud and J. Tracy Weed. SPIE, 2004. http://dx.doi.org/10.1117/12.569034.

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King, Mingchu, Chun-Keng Hsu, Chiang Fu, et al. "Ring-type ESD damage caused by electrostatic chuck of ion implanter." In Microelectronic Manufacturing Technologies, edited by Kostas Amberiadis, Gudrun Kissinger, Katsuya Okumura, Seshu Pabbisetty, and Larg H. Weiland. SPIE, 1999. http://dx.doi.org/10.1117/12.346916.

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Shu, Emily Y. "Optimization of electrostatic chuck for mask blank flatness control in extreme ultraviolet lithography." In Photomask and Next-Generation Lithography Mask Technology XIV, edited by Hidehiro Watanabe. SPIE, 2007. http://dx.doi.org/10.1117/12.728933.

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Jeonghoon Yoo, Jae-Seok Choi, Sang-Joon Hong, Tae-Hyun Kim, and Sung Jin Lee. "Finite element analysis of the attractive force on a Coulomb type electrostatic chuck." In 2007 International Conference on Electrical Machines and Systems. IEEE, 2007. http://dx.doi.org/10.1109/icems12746.2007.4412064.

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Kuo-Chan Hsu, Jaw-Yen Yang, Jian-Zhang Chen, Yi-Hsiuan Yu, and Yen-Ju Chen. "Modeling and simulation of heat transfer characteristics of 12-inch wafer on electrostatic chuck." In 2015 10th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT). IEEE, 2015. http://dx.doi.org/10.1109/impact.2015.7365248.

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