Relevant bibliographies by topics / Elipsometrie

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  1. Journal articles
  2. Dissertations / Theses
  3. Conference papers

Academic literature on the topic 'Elipsometrie'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Elipsometrie"

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Akashev, L. A., N. A. Popov, V. A. Kochedykov, and V. G. Shevchenko. "Elipsometric study of the surface oxidation of aluminum-heavy REM alloys." Russian Metallurgy (Metally) 2011, no. 8 (2011): 744–47. http://dx.doi.org/10.1134/s0036029511080027.

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Garriga, M., and M. I. Alonso. "Caracterización estructural mediante elipsometría espectral de multicapas basadas en SiO2." Boletín de la Sociedad Española de Cerámica y Vidrio 39, no. 6 (2000): 729–34. http://dx.doi.org/10.3989/cyv.2000.v39.i6.773.

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Saini, Rajesh, Mohammad Haque, and Ayrat Gizzatov. "Effect of Salt Surfactant Interaction on Crystal Growth Observed Using Surface Enhanced Elipsometric Contrast (SEEC) Imaging." Microscopy and Microanalysis 26, S2 (2020): 2852–53. http://dx.doi.org/10.1017/s1431927620022990.

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Albertin, Katia F., M. A. Valle, and I. Pereyra. "Study Of MOS Capacitors With TiO2 And SiO2/TiO2 Gate Dielectric." Journal of Integrated Circuits and Systems 2, no. 2 (2007): 89–93. http://dx.doi.org/10.29292/jics.v2i2.272.

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MOS capacitors with TiO2 and TiO2/SiO2 dielectric layer were fabricated and characterized. TiO2 films where physical characterized by Rutherford Backscattering, Fourier TransformInfrared Spectroscopy and Elipsometry measurements. Capacitance-voltage (1MHz) and current voltage measurements were utilized to obtain, the effective dielectric constant, effective oxide thickness (EOT), leakage current density and interface quality. The results show that the obtained TiO2 films present a dielectric constant of approximately 40, a good interface quality with silicon and a leakage current density, of 70 mA/cm2 for VG = 1V, acceptable for high performance logic circuits and low power circuits fabrication, indicating that this material is a viable substitute for current dielectric layers in order to prevent tunneling currents.
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Vasconcelos, N. S. L. S., J. S. Vasconcelos, V. Bouquet, et al. "Sinterização de filmes finos de LiNbO3 em forno microondas: estudo da influência da direção do fluxo de calor." Cerâmica 50, no. 314 (2004): 128–33. http://dx.doi.org/10.1590/s0366-69132004000200009.

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Filmes finos de LiNbO3 foram preparados pelo método dos precursores poliméricos e depositados por "spin coating" sobre substratos de safira (0001). Os filmes foram tratados em forno microondas doméstico a 400 ºC por 15 e 20 min. Um material com alta perda dielétrica (susceptor de SiC) foi usado para absorver energia das microondas e transformá-la em calor. Este calor foi transferido para o filme a fim de promover a sua cristalização. O susceptor foi posicionado acima do filme ou embaixo do substrato. Desta forma, a influência da direção do fluxo de calor na cristalização das amostras foi verificada. Os filmes foram caracterizados por difração de raios X, microscopia de força atômica e espectrofotometria (transmitância) na região UV-visível e o índice de refração foi determinado por elipsometria. O crescimento epitaxial foi observado para o filme com susceptor posicionado embaixo do substrato. Verificou-se que os grãos apresentaram crescimento aleatório quando o susceptor foi posicionado acima do filme. Os filmes apresentaram-se relativamente densos, homogêneos e lisos, com boas propriedades ópticas.
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Chávez-Ramírez, J., M. Aguilar-Frutis, G. Burillo, et al. "Caracterización eléctrica de películas delgadas de Al2O3 depositadas sobre GaAs por la técnica de rocío pirolítico." Matéria (Rio de Janeiro) 13, no. 1 (2008): 130–35. http://dx.doi.org/10.1590/s1517-70762008000100016.

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Se estudiaron las características eléctricas de películas delgadas de óxido de aluminio preparadas por la técnica de rocío pirolítico ultrasónico. Las películas delgadas se depositaron a partir de una solución de acetilacetonato de aluminio en N,N-dimetilformamida sobre substratos monocristalinos de GaAs (100) tipo-p. La temperatura de depósito fue de 300 a 600 ºC. Las propiedades eléctricas de las películas en función de la temperatura de substrato se determinaron por medidas de capacitancia y corriente contra voltaje mediante la incorporación de las películas en estructuras tipo MOS (metal-óxido-semiconductor). La densidad de estados de interfaz resultó del orden de 10(12) 1/eV-cm² y el dispositivo MOS soportó campos eléctricos mayores a 5MV/cm, sin mostrar rompimiento dieléctrico. El índice de refracción se determinó por elipsometría a 633nm, con un valor máximo del orden de 1.64.
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Bartoli, Julio R., Ricardo A. Costa, Patrick Verdonck, Ronaldo D. Mansano, and Marcelo N. Carreño. "Filmes ópticos poliméricos fluorados com índice de refração gradual." Polímeros 9, no. 4 (1999): 148–55. http://dx.doi.org/10.1590/s0104-14281999000400025.

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Filmes finos de PMMA foram preparados a partir de solução e expostos ao plasma de CF4+H2, visando mudar o Índice de Refração (I.R.) da superficie do PMMA através da fluoração. Os filmes de PMMA expostos ao plasma, denominados de filmes ópticos, foram caracterizados usando as técnicas: ESCA, RBS, FTIR, gravimetria, ângulo de contato, refratometria e elipsometria. Os resultados revelaram que as superfícies de PMMA foram revestidas com uma fina camada de hidrofluorcarbono polimérico, com espessuras variando entre 0,43 e 0,49mim. A camada de hidrofluorcarbono polimérico na superfície do PMMA foi responsável pela significante redução do seu I.R. de 1,49 para 1,43. A concentração de flúor nessa camada aumentou gradualmente em função da profundidade, sendo menor na sua superficie. Como o átomo de flúor é responsável pela redução do I.R., concluiu-se que o I.R. no revestimento fluorado do filme óptico variou também de forma gradual. A técnica de polimerização por plasma de CF4+H2 mostrou-se útil para modificar in situ os I.R. da superfíces de guias de ondas e fibras ópticas poliméricas, visando reduzir as perdas e aumentar a velocidade de transmissão de dados.
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Irigoyen, Joseba, Jagoba Iturri, José Luis Camacho, Edwin Donath, and Sergio Moya. "Polyelectrolyte brushes: Water Content, Zeta Potential and Mechanical Properties." MRS Proceedings 1754 (2015): 53–58. http://dx.doi.org/10.1557/opl.2015.470.

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ABSTRACTPolymer brushes of poly[2-(methacryloyloxy)ethyl]trimethylammonium chloride (PMETAC) and poly(sulfo propyl methacrylate) (PSPM) were synthesized by Atomic Transfer Radical Polymerization from planar and colloidal surfaces. Polymer brush growth was followed by QCMD and the water content determined by combined QCMD and elipsometry. From the water content the percentage of water lost during the brush collapse with the ionic strength could be obtained.Highly charged PSPM brushes were indented by Atomic Force Microscopy at different ionic strengths. The force response was fitted to a phenomenological equation analogous to the equation of state of a compressible fluid. Internal energy and brush compressibility were obtained as a function of ionic strength.Spherical brushes of PMETAC and PSPM display an invariance of the zeta potential with ionic strength in the range from 20 mM to 200 mM NaCl, the zeta potential remains almost constant. This invariance can be explained applying a hairy surface approach.
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Sarmiento Chávez, Ana Carolina, Mario Moreno Moreno, Alfonso Torres Jacacome, Abel García Barrientos, and Jairo Plaza Casastillo. "DEPÓSITO Y CARACTERIZACIÓN DE PELÍCULAS DOPADAS DE A-SI:H (TIPO N O TIPO P)." Revista EIA, May 16, 2016, 53–58. http://dx.doi.org/10.24050/reia.v12i2.962.

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El silicio amorfo hidrogenado (a-Si:H) surge como un material prometedor en la industria fotovoltaica gracias a su alto coeficiente de absorción y a su bajo costo de producción. En este trabajo se estudiaron las propiedades ópticas y eléctricas de películas de a-Si:H dopadas tipo p y tipo n tales como: transmitancia, coeficiente de absorción, conductividad, energía de activación y espesor. Dichas películas se fabricaron mediante la técnica Depósito Químico en fase Vapor Asistido por Plasma (PECVD, por su sigla en inglés) a baja frecuencia con una temperatura de sustrato de 300 °C, variando el flujo de hidrógeno y de los gases dopantes. La caracterización de las películas se hizo mediante las técnicas de caracterización eléctrica, transmisión óptica y elipsometría UV – Visible. Los resultados muestran que el silicio amorfo hidrogenado es una buena alternativa para la fabricación de dispositivos fotovoltaicos.
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"Síntesis y caracterización de un compuesto semiconductor NiO-ZnO dopado con nanopartículas de Au por el método sol-gel para aplicación como sensores de gas." Revista ECIPeru, January 7, 2019, 5–10. http://dx.doi.org/10.33017/reveciperu2012.0002/.

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Síntesis y caracterización de un compuesto semiconductor NiO-ZnO dopado con nanopartículas de Au por el método sol-gel para aplicación como sensores de gas Alex Díaz, Dionicio Otiniano, E. Della Gaspera, Alessandro Martucci Departamento de Ingeniería de Materiales, Universidad Nacional de Trujillo-Perú Dipartimento d’Ingegneria Meccanica – Settore Materiali, Universita di Padova, 35131 Padova-Italia DOI: https://doi.org/10.33017/RevECIPeru2012.0002/ RESUMEN Láminas porosas de un compuesto semiconductor formado por NiO-ZnO (%mol) dopado con nanopartículas de Au (3% mol) fueron preparados por el método sol-gel usando acetato de níquel tetrahidratado (NiC4H6O4.4H2O) y acetato de zinc dihidratado (C4H6O4Zn.2H2O) como precursores, metanol (CH6OH) y etanol (C2H6O) como solventes, monoetanolamina (C2H7NO) y dietanolamina (C4H11NO2) como ligantes funcionales, y ácido cloroaúrico HAuCl4 como precursor. Las muestras se caracterizaron por espectroscopias Infrarrojo (IR), ultravioleta (UV-VIS), microscopía SEM, difracción de rayos X (XRD), y ensayos de sensores gaseosos. Las muestras semiconductoras fueron depositadas sobre substratos de silicio por el método de spin-coating a 2000 rpm, posteriormente fueron tratadas a 500 y 600 ºC. Los efectos de las composiciones de NiO-ZnO y el porcentaje de dopaje también se discuten en este argumento. El espesor de la capa fue determinado por elipsometria aproximado a 75 nm. Estos compuestos fueron ensayados para sensores gaseosos de H2 y CO (1% V/V) a 300ºC, demostrando óptimos resultados para el H2, pero no así para el CO. Descriptores: NiO, ZnO, semiconductores, sensor gaseoso. ABSTRACT Porous films formed by a semiconductor ZnO-NiO (% mol) doped with Au nanoparticles (3% mol) were prepared by sol-gel method using nickel acetate tetrahydrate (NiC4H6O4.4H2O) and zinc acetate dihydrate (C4H6O4Zn.2H2O) as precursors, methanol (CH6OH) and ethanol (C2H6O) as solvents, monoethanolamine (C2H7NO) and diethanolamine (C4H11NO2) as functional chelants, and chloroauric acid (HAuCl4) as gold precursor. The samples were characterized by infrared (IR) and ultraviolet (UV-VIS) spectroscopy, microscopy SEM, X-ray diffraction (XRD) and gas sensing tests. The semiconductor samples were deposited on silicon substrates by spin-coating method at 2000 rpm, subsequently annealing at 500 and 600 °C. The effects of the compositions of NiO-ZnO and the percentage of doping are also discussed. The layer thickness was determined by ellipsometry in approximately 75 nm. These compounds were tested for gas sensors for H2 and CO (1% V/V) at 300 °C, showing excellent results for H2, but not for the CO. Keywords: NiO, ZnO, semiconductors, gas sensor.
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Dissertations / Theses on the topic "Elipsometrie"

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Novotný, Zbyněk. "Elipsometrie tenkých vrstev." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2010. http://www.nusl.cz/ntk/nusl-229122.

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Diploma thesis deals with ageing process of thin films of Co and Cu on Si substrate, prepared by the IBAD method. The process of film ageing, which depends on time of exposition to the atmosphere at room conditions, was investigated with spectroscopic ellipsometry (VIS+UV) and atomic force microscopy. In case of thin Co films, approximately four days long incubation period was observed. During this time period, a change in the optical parameters of the film occurs without a measurable change of the film topography. Using non-contact atomic force microscopy, a growth of the transitional film in the island growth regime was observed. During the ageing of thin Cu films, two stages of growth of the transitional layer were observed - nucleation stage and growth stage. Both of these time periods of the transitional layer growth show direct logarithmic dependence. Using non-contact atomic force microscopy, the growth of the transitional film was observed. Using atomic force microscopy in non-contact regime, time dependent measurement was done and the process of forming of one monolayer of the transitional layer was documented. Within the diploma thesis, a series of experiments on ultra high vacuum system were performed in order to investigate phase transformation of thin Fe films (22 monolayers) on Cu(100) stabilized by CO absorption. The transformation from fcc phase to bcc phase was induced by Ar+ ion beam bombardment with the ion energy in the range (0.5-4) keV. The process of phase transformation was observed by surface magneto-optic Kerr effect, Auger electron spectroscopy and low energy electron diffraction.
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Kucharčík, Jan. "Příprava a optické vlastnosti tenkých vrstev a vrstevnatých struktur pomocí plazmochemické depozice." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2014. http://www.nusl.cz/ntk/nusl-220966.

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Thesis in theoretical part is focused on the principle of spectroscopic ellipsometry and formation of thin films by plasma-enhanced chemical vapor deposition (PECVD). In the experimental part we describe the deposition system, ellipsometer and mathematical evaluation of ellipsometric data, materials used for film formation and processing of the samples. Single-layer and multilayer structures of polymeric materials were prepared. We revealed that the optical properties of thin films are independent of film thickness. We also described the effect of the effective power and deposition gas mixture on optical properties of thin films.
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Fernandes, Vasco R. "Caracterização de guias de ondas por elipsometria." Master's thesis, Universidade de Aveiro, 2010. http://hdl.handle.net/10773/2653.

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Mestrado em Engenharia Física<br>O presente trabalho reporta a aplicação a técnica de elipsometria à caracterização de dispositivos para óptica integrada, em particular guias de onda planares e em canal fabricados por escrita directa usando radiação laser UV, preparados com materiais híbridos orgânicos-inorgânicos modificados com tetra-propóxido de zircónio. É apresentada a aplicação de optimização multi-objectivo na análise de dados elipsométricos dos guias de onda planares em substrato de sílica em silício. Efectuando a comparação entre um algoritmo genético multi-objectivo e algoritmo genético simples, os resultados indicam que o desempenho do método sugerido é superior. Para os guias em canal o incremento no índice de refracção no canal, relativamente ao restante filme, devido à exposição UV, foi estimado em 0,0003, demonstrando bom acordo com valores reportados na literatura.<br>The present work focus on the application of the technique of ellipsometry to the characterization of integrated optical devices, particularly planar waveguides and channel waveguides fabricated by direct writing using UV laser radiation, prepared with organic-inorganic hybrid materials modified with tetra-propoxide zirconium. The application of multi-objective optimization in ellipsometric data analysis of planar waveguides in a silica on silicon substrate is presented. By making a comparison between a multi-objective genetic algorithm and genetic algorithm simple, the results indicate that the performance of the suggested method is superior. For the channel waveguides the increase in the refractive index of the channel due to UV exposure, relatively to the rest of the film, was estimated to be 0.0003, showing good agreement with values reported in the literature.
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Schmiedová, Veronika. "Studium disperzních závislostí indexu lomu pomocí interferenční mikroskopie." Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2012. http://www.nusl.cz/ntk/nusl-216868.

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The master´s thesis deals with the study of optical properties of thin transparent layers on the organic materials (PPV, P3HT, TiO2, DPP) and especially with the determination of dispersion dependences of refractive index of prepared thin layers. In the theoretical part there are described principles of deposition thin layers of the analyzed materials and their properties. In addition, there are also described methods of optical properties measurements (optical and interference microscopy and ellipsometry). The combination of interference microscope with digital camera was used for determination of refractive index. The image analysis was used for the determination of parameters (with help of the software HarFA). The images of thin layers surfaces were analyzed from the side of the metal contact as well as from the side of glass. In conclusion, there are presented results of the refractive index of the thin layers obtained from the measured values.
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Filho, Djalma de Albuquerque Barros. "Caracterização de filmes finos Sol-gel por elipsometria." Universidade de São Paulo, 1992. http://www.teses.usp.br/teses/disponiveis/54/54131/tde-19032009-090814/.

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Este trabalho experimental trata da caracterização de filmes sol-gel por elipsometria. A caracterização é um procedimento importante na determinação das propriedades físico-químicas de qualquer material como, por exemplo, filmes finos sol-gel. É possível produzir materiais de natureza diversa (vítreos, cerâmicos e cristalinos) pela técnica sol-gel. A elipsometria, por sua vez, é uma técnica recente na determinação do índice de refração complexo de um material. Os seus fundamentos teóricos tratam da natureza da luz polarizada e sua propagação através de um sistema ótico. No decorrer do trabalho, estes princípios possibilitarão descrever os sistemas óticos utilizados na parte experimental. Os filmes finos têm propriedades óticas e mecânicas que podem diferir bastante daquelas encontradas em certo volume do material. A análise das suas propriedades é feita através das medidas dos seguintes parâmetros: espessura, índice de refração e perfil de tensões. Um dos objetivos deste trabalho foi à observação da evolução das propriedades óticas e mecânicas durante o processo de densificação. Os filmes caracterizados são de sílica (SiO2), depositados sobre três tipos de substratos: vidro comum, sílica fundida, e silício. A caracterização deste material durante o processo de densificação térmica é dividida nas seguintes etapas: a) evolução estrutural através da medida da espessura, b) análise das porosidades pelo espectro do índice de refração, c) determinação das tensões. Como conseqüência, a montagem de um microelipsômetro que mede retardações óticas de filmes finos fez-se necessária e foi realizada durante este trabalho. A sua calibração é possível pela técnica de elipsometria nula. Assim sendo, pode-se especificar o equipamento, bem como aplicá-lo em diversas situações como: a) determinação do estado tênsil ou compreensivo de filmes de CeO2-TiO2; b) determinar tensões em filmes de sílica, c) análise de defeitos em filmes de um óxido misto de SnO2 In2O3(ITO).<br>This is an experimental work about the characterization of thin sol-gel films by ellipsometry. The characterization is an important procedure on determining the physical-chemical properties of many materials such as thin films produced by the sol-gel process. It is possible to produce several kinds of materials (vitreous, ceramic and crist.alline) by using the sol-gel process. The elipsometry, itself is a new technique for the determination of the complex refractive index of a material. Its theoretical principles concern about the nature of the polarized light, and its propagation through an optical system. These principles will be used to describe the optical systems of the experimental procedure along this work. The thin films have optical and mechanical properties that can strongly differ from those found for the material at bulk form. The analwses of these properties is carried out by the measurement of the following parameters: thickness, refractive index and stress profile. One of the goals of this work is to observe the evolution of the optical and mechanical properties during the densification process. The characterized films are of silica (SiO2) deposited on three kinds of substrate: ordinary glass, vitreous silica and single crystal silicon. The characterization of this material during the densification process is divided in t.he following steps: a ) structural evolution by thickness mesurement; b ) porosity study by refractive index spectrum; c) stress determination. As a consequence of this characterization, it was constructed, along the work, a microellipsometer which measures thin film retardation. Its calibration is possible by using the null ellipsometry technique. In this way, the equipment can be specified and applied to different situations such as: a) determination of the stress or compressive state for CeO2-TiO2; b ) stress measurements of silica films; c ) defect st.udy of ITO films SnO2 In2O3.
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Ligmajer, Filip. "Uspořádaná a neuspořádaná pole koloidních nanočástic a jejich využití pro detekci biomolekul." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2013. http://www.nusl.cz/ntk/nusl-230840.

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This thesis deals with guided self-assembly of gold nanoparticles from their colloidal solutions onto silicon substrates and possible employment of nanoparticles for detection of biomolecules. It was found that by adjustment of solution pH and surface chemistry modification by means of electron beam irradiation it is possible to facilitate nanoparticle deposition to patterns with almost single particle precision. Spectroscopic ellipsometry was then employed in analysis of self-assembled layers of nanoparticles and its combination with a theory of effective medium approximation has proven the ability to assess nanoparticle dimensions and volume fractions. By experiments with thiolated oligonucleotides it has been shown that using ellipsometry one can detect even with very subtle changes in nanoparticle environment caused by biomolecules, thus promising its possible use in the field of biodetection.
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Veteška, Jaromír. "Plazmatické povrchové úpravy skleněných vláken na bázi organokřemičitanů." Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2008. http://www.nusl.cz/ntk/nusl-216223.

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This thesis is aimed at preparation of thin plasma-polymerized films deposited on glass fibers by Plasma-Enhanced Chemical Vapor Deposition (PE CVD) from a mixture of tetravinylsilane (TVS) and oxygen gas. Plasma-polymerized films which were deposited on silicon wafers were used to characterize chemical properties and optimization of deposition process with respect to reproducibility.
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Kelíšek, Petr. "Funkční organicko-anorganické nanostruktury." Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2019. http://www.nusl.cz/ntk/nusl-401846.

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Diploma thesis deals with preparation of multilayered organic-inorganic nanostructures via PECVD technology and analysis of optical properties of these layers by spectroscopic ellipsometry. The theoretical part handles the definition of thin layers, layered and gradient nanostructures, plasma enhanced chemical vapor deposition and principles of spectroscopic ellipsometry. In the experimental part, used materials and chemicals are described, afterwards follow a complete description of the apparatus used for sample preparation and a description of the sample preparation procedure. The results part consists of methodology of preparing material models necessary for ellipsometric measurements and evaluation of optical properties of deposited nanolayers.
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Bábík, Adam. "Samovolně seskupené vrstvy na bázi křemíku." Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2009. http://www.nusl.cz/ntk/nusl-216517.

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Thin film deposition, characterization and properties of self-assembled monolayers based on silicon were studied with emphasis on the SA monolayers deposited from vinyltriethoxysilane and vinyltrichlorsilane. The thesis is aimed at basic properties of the SA monolayer and explanation of its growth. Methods and techniques used for analysis of the monolayer were described as well. Contact angle measurements and an evaluation of the surface free energy are depicted in details. The deposited SA layers were observed with respect to their chemical composition and surface morphology by X-ray photoelectron spectroscopy (XPS), ellipsometry and atomic force microscopy (AFM).
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Pokorný, David. "Studium morfologie velmi tenkých vrstev XPS analýzou více spektrálních čar jednoho prvku." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2019. http://www.nusl.cz/ntk/nusl-402568.

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This diploma thesis deals with methodology of thin film thickness determination using X-ray radiation of silver anode which provides radiation with energy of 2984,3 eV. This energy is twice as high as the standard aluminium radiation which allows a measurement of new photoelectron lines with higher bonding energy and it also provides thanks to the higher photoelectron energy greater information depth. In order to get the right results it was necessary to calibrate the spectrometer Kratos Axis Supra in the silver anode mode first and found out the form of the transmission function. The determination of the thickness of the thin layer was demonstrated by the comparation of the ratio of different photoelectron lines intensities with the theoretical model. For that purpose was specifically used the Si 1s and Si 2p peak bound in the substrate in the Si-Si bonding or in the thin oxid layer in the Si-O bonding. The results show that for thin SiO2/Si film thickness determination is the best to use the intensity ratio of only one photoelectron line. A silver anode however provides greater information depth.
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Conference papers on the topic "Elipsometrie"

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Caldeira, Marcus Vinícius, Bhetina Cunha Gomes, Ramona Rodrigues Santos, Gerson Chaves de Almeida, Elivelton Alves Ferreira, and Ladário da Silva. "CARACTERIZAÇÃO DE ÓXIDO DE ALUMÍNIO POR ELIPSOMETRIA." In 73º Congresso Anual da ABM. Editora Blucher, 2019. http://dx.doi.org/10.5151/1516-392x-31237.

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Kim, Young-Hoon, Seong-Jin Kim, Jin-Back Park, et al. "Reticle haze measurement by spectroscopic elipsometry." In Photomask Technology 2005, edited by J. Tracy Weed and Patrick M. Martin. SPIE, 2005. http://dx.doi.org/10.1117/12.632375.

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Garcia, Marcela Teixeira Dalboni, João Carlos Martins do Couto, José Augusto Oliveira Huguenin, and Ladário da Silva. "CARACTERIZAÇÃO DE ÓLEO EM FOLHA-DE-FLANDRES POR ELIPSOMETRIA." In 70º Congresso Anual da ABM. Editora Blucher, 2018. http://dx.doi.org/10.5151/1516-392x-26830.

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Confort, Camila Sampaio, Daniel de Carvalho Silva, Caroline da Silva Terra, et al. "MEDIDA DE ESPESSURA DE FILME FINO DE ÓXIDO DE ESTANHO POR ELIPSOMETRIA." In 72º Congresso Anual da ABM. Editora Blucher, 2017. http://dx.doi.org/10.5151/1516-392x-30419.

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de Almeida, Tamiris, Pítias Eduardo da Silva, Ladário da Silva, and Letícia Vitorazi. "Caracterização do regime de crescimento de multicamadas de polieletrólitos via elipsometria e AFM." In Publicação do l Simpósio de Engenharia Metalúrgica e de Materiais Sul Fluminense. Even3, 2020. http://dx.doi.org/10.29327/smms.242091.

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Oliveira, Michele de Almeida, Nayara Ferreira Nunes, Elivelton Alves Ferreira, et al. "ESTUDO DE PROPRIEDADES ÓPTICAS DE FILME FINO DE ÓXIDO ANÓDICO DE TITÂNIO POR ELIPSOMETRIA." In 72º Congresso Anual da ABM. Editora Blucher, 2017. http://dx.doi.org/10.5151/1516-392x-30421.

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Lopes Junior, Cláudio Faria, Glauco Silva de Assis Machado, Patrícia Sousa Nilo Mendes, et al. "ESTUDO DA LIGA DE CU-ZN E SEUS ÓXIDOS UTILIZANDO A TÉCNICA DE ELIPSOMETRIA ESPECTROSCÓPICA." In 74º Congresso Anual da ABM. Editora Blucher, 2019. http://dx.doi.org/10.5151/2594-5327-33507.

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Moura, Sebastião Jucivaldo Oliveira, Marcus Vinícius Caldeira, Ramona Rodrigues Santos, Bhetina Cunha Gomes, Elivelton Alves Ferreira, and Ladário da Silva. "ESTUDO DO CRESCIMENTO DO ÓXIDO ANÓDICO DE ALUMÍNIO EM SOLUÇÃO DE H3PO4 A 0,4M POR ELIPSOMETRIA." In 73º Congresso Anual da ABM. Editora Blucher, 2019. http://dx.doi.org/10.5151/1516-392x-31576.

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Garcia, Marcela Dalboni Teixeira, João Carlos Martins do Couto, José Augusto Oliveira Huguenin, and Ladário da Silva. "ESTUDOS PARA MODELAGEM DE FILMES FINOS DE ÓLEO EM FOLHA-DE-FLANDRES PARA MEDIDAS DE ESPESSURA POR ELIPSOMETRIA." In 70º Congresso Anual da ABM. Editora Blucher, 2018. http://dx.doi.org/10.5151/1516-392x-26828.

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