Relevant bibliographies by topics / Emerging field-Effect transistor

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
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  5. Conference papers

Academic literature on the topic 'Emerging field-Effect transistor'

Author: Grafiati
Published: 31 May 2025
Last updated: 31 July 2025

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Journal articles on the topic "Emerging field-Effect transistor"

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Coluccio, Maria Laura, Salvatore A. Pullano, Marco Flavio Michele Vismara, et al. "Emerging Designs of Electronic Devices in Biomedicine." Micromachines 11, no. 2 (2020): 123. http://dx.doi.org/10.3390/mi11020123.

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A long-standing goal of nanoelectronics is the development of integrated systems to be used in medicine as sensor, therapeutic, or theranostic devices. In this review, we examine the phenomena of transport and the interaction between electro-active charges and the material at the nanoscale. We then demonstrate how these mechanisms can be exploited to design and fabricate devices for applications in biomedicine and bioengineering. Specifically, we present and discuss electrochemical devices based on the interaction between ions and conductive polymers, such as organic electrochemical transistor
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Kim, Taegeon, and Changhwan Shin. "Effects of Interface Trap on Transient Negative Capacitance Effect: Phase Field Model." Electronics 9, no. 12 (2020): 2141. http://dx.doi.org/10.3390/electronics9122141.

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Ferroelectric materials have received significant attention as next-generation materials for gates in transistors because of their negative differential capacitance. Emerging transistors, such as the negative capacitance field effect transistor (NCFET) and ferroelectric field-effect transistor (FeFET), are based on the use of ferroelectric materials. In this work, using a multidomain 3D phase field model (based on the time-dependent Ginzburg–Landau equation), we investigate the impact of the interface-trapped charge (Qit) on the transient negative capacitance in a ferroelectric capacitor (i.e.
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Xu, Yao, Ashok Srivastava, and Ashwani K. Sharma. "Emerging Carbon Nanotube Electronic Circuits, Modeling, and Performance." VLSI Design 2010 (February 17, 2010): 1–8. http://dx.doi.org/10.1155/2010/864165.

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Current transport and dynamic models of carbon nanotube field-effect transistors are presented. A model of single-walled carbon nanotube as interconnect is also presented and extended in modeling of single-walled carbon nanotube bundles. These models are applied in studying the performances of circuits such as the complementary carbon nanotube inverter pair and carbon nanotube as interconnect. Cadence/Spectre simulations show that carbon nanotube field-effect transistor circuits can operate at upper GHz frequencies. Carbon nanotube interconnects give smaller delay than copper interconnects use
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Hien, Dinh Sy. "Development of Quantum Simulator for Emerging Nanoelectronics Devices." ISRN Nanotechnology 2012 (August 28, 2012): 1–10. http://dx.doi.org/10.5402/2012/617214.

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We have developed NEMO-VN2, a new quantum device modeling tool that simulates a wide variety of quantum devices including the resonant tunneling diode, the single electron transistor, the molecular field effect transistor, the carbon nanotube field effect transistor, and the spin field effect transistor. In this work the nonequilibrium Green’s function is used to perform a comprehensive study of the emerging nanoelectronics devices. The program has been written by using graphic user interface of Matlab. NEMO-VN2 uses Matlab to solve Schrodinger equation to get current-voltage characteristics o
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Panahi, Abbas, and Ebrahim Ghafar-Zadeh. "Emerging Field-Effect Transistor Biosensors for Life Science Applications." Bioengineering 10, no. 7 (2023): 793. http://dx.doi.org/10.3390/bioengineering10070793.

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Smaani, Billel, Fares Nafa, Mohamed Salah Benlatrech, et al. "Recent progress on field-effect transistor-based biosensors: device perspective." Beilstein Journal of Nanotechnology 15 (August 6, 2024): 977–94. http://dx.doi.org/10.3762/bjnano.15.80.

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Over the last few decades, field-effect transistor (FET)-based biosensors have demonstrated great potential across various industries, including medical, food, agriculture, environmental, and military sectors. These biosensors leverage the electrical properties of transistors to detect a wide range of biomolecules, such as proteins, DNA, and antibodies. This article presents a comprehensive review of advancements in the architectures of FET-based biosensors aiming to enhance device performance in terms of sensitivity, detection time, and selectivity. The review encompasses an overview of emerg
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Hasan, Md Sakib, Samira Shamsir, Mst Shamim Ara Shawkat, Frances Garcia, and Syed K. Islam. "Multivariate Regression Polynomial: A Versatile and Efficient Method for DC Modeling of Different Transistors (MOSFET, MESFET, HBT, HEMT and G4FET)." International Journal of High Speed Electronics and Systems 27, no. 03n04 (2018): 1840016. http://dx.doi.org/10.1142/s0129156418400165.

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This work presents multivariate regression polynomial as a versatile and efficient method for DC modeling of modern transistors with very different underlying physics including MOSFET (metal-oxide-semiconductor field-effect transistor), MESFET (metal–semiconductor field-effect transistor), HBT (heterojunction bipolar transistor), HEMT (High-electron-mobility transistor) and a novel silicon-on-insulator four-gate transistors (G4FET). A set of available data from analytic solution, TCAD simulation, and experimental measurements for different operating conditions is used to empirically determine
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C., Venkataiah, Mallikarjuna Rao Y., Manjula Jayamma, et al. "Performance analysis of 4-bit ternary adder and multiplier using CNTFET for high speed arithmetic circuits." E3S Web of Conferences 391 (2023): 01221. http://dx.doi.org/10.1051/e3sconf/202339101221.

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Multiple valued logic (MVL) can represent an exponentially higher number of data/information compared to the binary logic for the same number of logic bits. Compared to the conventional devices, the emerging device technologies such as Graphene Nano Ribbon Field Effect Transistor (GNRFET) and carbon nanotube field effect transistor (CNTFET) appears to be very promising for designing MVL logic gates and arithmetic circuits due to some exceptional electrical properties such as the ability to control the threshold voltage. This variation of the threshold voltage is one of the prescribed technique
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Natarajamoorthy, Mathan, Jayashri Subbiah, Nurul Ezaila Alias, and Michael Loong Peng Tan. "Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design." Journal of Nanotechnology 2020 (April 30, 2020): 1–7. http://dx.doi.org/10.1155/2020/7608279.

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The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects. Graphene nanoribbon field-effect transistor (GNRFET) is an emerging technology that can potentially solve the issues of the conventional planar MOSFET imposed by quantum mechanical (QM) effects. GNRFET can also be used as static random-access memory (SRAM) circuit design due to its remarkable electronic properties. For high-speed operation, SRAM c
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Hu, Liang, Zhenyu Xu, Fangchao Long, et al. "Direct bandgap opening in sodium-doped antimonene quantum dots: an emerging 2D semiconductor." Materials Horizons 7, no. 6 (2020): 1588–96. http://dx.doi.org/10.1039/d0mh00440e.

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Dissertations / Theses on the topic "Emerging field-Effect transistor"

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Mohammad, Azhar. "EMERGING COMPUTING BASED NOVEL SOLUTIONS FOR DESIGN OF LOW POWER CIRCUITS." UKnowledge, 2018. https://uknowledge.uky.edu/ece_etds/125.

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The growing applications for IoT devices have caused an increase in the study of low power consuming circuit design to meet the requirement of devices to operate for various months without external power supply. Scaling down the conventional CMOS causes various complications to design due to CMOS properties, therefore various non-conventional CMOS design techniques are being proposed that overcome the limitations. This thesis focuses on some of those emerging and novel low power design technique namely Adiabatic logic and low power devices like Magnetic Tunnel Junction (MTJ) and Carbon Nanotub
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Unal, Selim. "Field-effect transistors and optoelectronic devices based on emerging atomically thin materials." Thesis, University of Exeter, 2017. http://hdl.handle.net/10871/27140.

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Development of field-effect transistors and their applications is advancing at a relentless pace. Since the discovery of graphene, a single layer of carbon atoms, the ability to isolate and fabricate devices on atomically thin materials has marked a paradigm shift in the timeline of transistor technologies. In this thesis, electrical and optical properties of atomically thin structures of graphene and tungsten disulfide (WS2) are investigated. Transport in graphene side-gated transistors and contact resistance at the metal-WS2 interface are presented. Finally, the optoelectronic performance of
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Neckel, Wesling Bruno. "Fabrication, caractérisation et modélisation des transistors à effet de champ émergents." Electronic Thesis or Diss., Bordeaux, 2025. http://www.theses.fr/2025BORD0055.

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Au cours des dernières décennies, la mise à l'échelle a été utilisée pour atteindre les objectifs d'amélioration de la technologie des transistors à effet de champ (FET), en la rendant plus puissante et plus efficace. La mise à l'échelle tend à s'arrêter en raison de limites physiques, ce qui conduit à de nouvelles approches visant à accroître les fonctionnalités des transistors et des circuits. Les transistors à effet de champ à nanofils verticaux sans jonction (JL-VNWFET) conviennent à l'intégration 3D grâce à des canaux uniformément dopés qui éliminent le dopage complexe et peuvent être com
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Liu, Wen. "Design, Characterization and Analysis of Electrostatic Discharge (ESD) Protection Solutions in Emerging and Modern Technologies." Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5404.

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Electrostatic Discharge (ESD) is a significant hazard to electronic components and systems. Based on a specific processing technology, a given circuit application requires a customized ESD consideration that includes the devices' operating voltage, leakage current, breakdown constraints, and footprint. As new technology nodes mature every 3-5 years, design of effective ESD protection solutions has become more and more challenging due to the narrowed design window, elevated electric field and current density, as well as new failure mechanisms that are not well understood. The endeavor of this r
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(7046639), Feng Zhang. "Transition Metal Dichalcogenide Based Memory Devices and Transistors." Thesis, 2019.

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<div>Silicon based semiconductor technology is facing more and more challenges to continue the Moore's law due to its fundamental scaling limitations. To continue the pace of progress of device performance for both logic and memory devices, researchers are exploring new low-dimensional materials, e.g. nanowire, nanotube, graphene and hexagonal boron nitride. Transition metal dichalcogenides (TMDs) are attracted considerable attention due their atomically thin nature and proper bandgap at the initial study. Recently, more and more interesting properties are found in these materials, which will
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Books on the topic "Emerging field-Effect transistor"

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Goel, Ekta, and Archana Pandey. Nanoscale Field Effect Transistors: Emerging Applications. Bentham Science Publishers, 2023.

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Archana, Ekta Goel;. Nanoscale Field Effect Transistors: Emerging Applications. Bentham Science Publishers, 2023.

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Archana, Ekta Goel;. Nanoscale Field Effect Transistors: Emerging Applications. Bentham Science Publishers, 2023.

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Bhowmick, Brinda. Simulation and Modeling of Emerging Devices: Tunnel Field-Effect and Fin Field Effect Transistors. Cambridge Scholars Publishing, 2023.

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Cicoira, Fabio, and Clara Santato. Organic Electronics: Emerging Concepts and Technologies. Wiley & Sons, Incorporated, John, 2013.

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Cicoira, Fabio, and Clara Santato. Organic Electronics: Emerging Concepts and Technologies. Wiley & Sons, Limited, John, 2013.

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Cicoira, Fabio, and Clara Santato. Organic Electronics: Emerging Concepts and Technologies. Wiley & Sons, Incorporated, John, 2013.

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Cicoira, Fabio, and Clara Santato. Organic Electronics: Emerging Concepts and Technologies. Wiley & Sons, Incorporated, John, 2013.

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Organic Electronics: Emerging Concepts and Technologies. Wiley & Sons, Limited, John, 2013.

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Launay, Jean-Pierre, and Michel Verdaguer. The mastered electron: molecular electronics and spintronics, molecular machines. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198814597.003.0005.

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After a historical account of the evolution which led to the concept of Molecular Electronics, the “Hybrid Molecular Electronics” approach (that is, molecules connected to nanosized metallic electrodes) is discussed. The different types of transport (one-step, two-step with different forms of tunnelling) are described, including the case where the molecule is paramagnetic (Kondo resonance). Several molecular achievements are presented: wires, diodes, memory cells, field-effect transistors, switches, using molecules, but also carbon nanotubes. A spin-off result is the possibility of imaging Mol
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Book chapters on the topic "Emerging field-Effect transistor"

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Pandey, Chandan Kumar, Saurabh Chaudhury, Neerja Dharmale, and Young Suh Song. "Tunnel Field-Effect Transistor." In Emerging Low-Power Semiconductor Devices. CRC Press, 2022. http://dx.doi.org/10.1201/9781003240778-3.

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Venkatesh, M., A. Andrew Roobert, V. R. S. Mani, A. Suruthi Minna, and G. Remya. "Design and Modeling of Gate Engineered Tunnel Field-Effect Transistor." In Handbook of Emerging Materials for Semiconductor Industry. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-99-6649-3_18.

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Upadhyay, Abhishek Kumar, Bhupendra Singh Reniwal, Shiromani Balmukund Rahi, and Ankur Beohar. "Negative Capacitance Tunnel Field-Effect Transistor: Impact and Future Scope." In Handbook of Emerging Materials for Semiconductor Industry. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-99-6649-3_37.

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Dutta, Ritam, and Nitai Paitya. "Analysis of InN-Based Surrounded Gate Tunnel Field-Effect Transistor for Terahertz Applications." In Emerging Trends in Terahertz Solid-State Physics and Devices. Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-3235-1_6.

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Rasool, Zuber, and S. Intekhab Amin. "Advanced Tunnel Field Effect Transistors." In Handbook of Emerging Materials for Semiconductor Industry. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-99-6649-3_45.

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Rasool, Asif, Shahnaz Kossar, Shagufta Parveen, and Umar Rasool. "Heterojunction Tunnel Field-Effect Transistors (TFETs) and Applications." In Handbook of Emerging Materials for Semiconductor Industry. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-99-6649-3_33.

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Chaudhary, Shalini, Nawaz Shafi, Basudha Dewan, Chitrakant Sahu, and Menka. "Potential Prospects of Negative Capacitance Field Effect Transistors for Low-Power Applications." In Emerging Low-Power Semiconductor Devices. CRC Press, 2022. http://dx.doi.org/10.1201/9781003240778-9.

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Zhou, Peng. "Tunneling Field-Effect Transistors Based on Two-Dimensional Materials." In Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and Sensing. CRC Press, 2018. http://dx.doi.org/10.1201/9780429503634-7.

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Tiwari, Aditya, Sangeeta Jana Mukhopadhyay, and Sayan Kanungo. "The Emerging Nanostructured Field Effect Transistors for Dielectrically Modulated Biosensing Applications." In Miniaturized Electrochemical Devices. CRC Press, 2023. http://dx.doi.org/10.1201/b23359-15.

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Vanitha, P., P. Suveetha Dhanaselvam, and M. Hemalatha. "Advanced Tunnel Field-Effect Transistors with Multi-gate and Pocket-Doping Technology." In Handbook of Emerging Materials for Semiconductor Industry. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-99-6649-3_36.

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Conference papers on the topic "Emerging field-Effect transistor"

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Verma, Manish, Pradipta Dutta, Arindam Basak, and Ramesh Kumar. "A Comparative Study of Material Impact on Tunnel Field-Effect Transistor (TFET) Performance." In 2024 International Conference on Emerging Trends in Networks and Computer Communications (ETNCC). IEEE, 2024. https://doi.org/10.1109/etncc63262.2024.10767569.

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Kumar, Desai Ajith, and Chandan Kumar Pandey. "Dielectric Pocket Nanotube Junctionless Field-effect Transistor based Biosensor." In 2022 2nd International Conference on Emerging Frontiers in Electrical and Electronic Technologies (ICEFEET). IEEE, 2022. http://dx.doi.org/10.1109/icefeet51821.2022.9847717.

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Sharma, Sumit, Akshay Moudgil, Prashant Mishra, and Samaresh Das. "Platinum Diselenide Thin-film based Field Effect Transistor for Ammonia Detection." In 2020 5th IEEE International Conference on Emerging Electronics (ICEE). IEEE, 2020. http://dx.doi.org/10.1109/icee50728.2020.9777024.

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Gajarushi, A., and N. Sarwade. "Analysis of universal logic gates using carbon nanotube field effect transistor." In ICWET '10: International Conference and Workshop on Emerging Trends in Technology. ACM, 2010. http://dx.doi.org/10.1145/1741906.1742102.

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Barik, Md Abdul, Manoj Kumar Sarma, and Jiten Ch Dutta. "Traditional graphene and junctionless carbon nanotube field effect transistor for cholesterol sensing." In 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE). IEEE, 2014. http://dx.doi.org/10.1109/icemelec.2014.7151205.

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Arun Samuel, T. S., and N. B. Balamurugan. "Potential and electric field model for 18 nm SG tunnel field effect transistor." In 2013 International Conference on Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT). IEEE, 2013. http://dx.doi.org/10.1109/icevent.2013.6496580.

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Basori, Rabaya, and A. K. Raychaudhuri. "Cu:TCNQ single nanowire as record high mobility charge transfer complex field effect transistor." In 2016 3rd International Conference on Emerging Electronics (ICEE). IEEE, 2016. http://dx.doi.org/10.1109/icemelec.2016.8074596.

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Madhuri, Badugu Divya, and S. Sunithamani. "Design of Ternary D-latch Using Graphene Nanoribbon Field Effect Transistor." In 2019 International Conference on Vision Towards Emerging Trends in Communication and Networking (ViTECoN). IEEE, 2019. http://dx.doi.org/10.1109/vitecon.2019.8899731.

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Bashir, Faisal, and Sajad A. Loan. "Design and simulation of a high performance dopingless p-tunnel field effect transistor." In 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE). IEEE, 2014. http://dx.doi.org/10.1109/icemelec.2014.7151160.

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Rao, Golive Yogeswara, and Rama Komaragiri. "A simulation study of multifunction double-halo field effect transistor." In 2013 Annual International Conference on Emerging Research Areas (AICERA) - 2013 International Conference on Microelectronics, Communications and Renewable Energy (ICMiCR). IEEE, 2013. http://dx.doi.org/10.1109/aicera-icmicr.2013.6575978.

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