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Journal articles on the topic 'Emerging field-Effect transistor'

Author: Grafiati

Published: 31 May 2025

Last updated: 31 July 2025

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1

Coluccio, Maria Laura, Salvatore A. Pullano, Marco Flavio Michele Vismara, et al. "Emerging Designs of Electronic Devices in Biomedicine." Micromachines 11, no. 2 (2020): 123. http://dx.doi.org/10.3390/mi11020123.

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A long-standing goal of nanoelectronics is the development of integrated systems to be used in medicine as sensor, therapeutic, or theranostic devices. In this review, we examine the phenomena of transport and the interaction between electro-active charges and the material at the nanoscale. We then demonstrate how these mechanisms can be exploited to design and fabricate devices for applications in biomedicine and bioengineering. Specifically, we present and discuss electrochemical devices based on the interaction between ions and conductive polymers, such as organic electrochemical transistor

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2

Kim, Taegeon, and Changhwan Shin. "Effects of Interface Trap on Transient Negative Capacitance Effect: Phase Field Model." Electronics 9, no. 12 (2020): 2141. http://dx.doi.org/10.3390/electronics9122141.

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Ferroelectric materials have received significant attention as next-generation materials for gates in transistors because of their negative differential capacitance. Emerging transistors, such as the negative capacitance field effect transistor (NCFET) and ferroelectric field-effect transistor (FeFET), are based on the use of ferroelectric materials. In this work, using a multidomain 3D phase field model (based on the time-dependent Ginzburg–Landau equation), we investigate the impact of the interface-trapped charge (Qit) on the transient negative capacitance in a ferroelectric capacitor (i.e.

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Xu, Yao, Ashok Srivastava, and Ashwani K. Sharma. "Emerging Carbon Nanotube Electronic Circuits, Modeling, and Performance." VLSI Design 2010 (February 17, 2010): 1–8. http://dx.doi.org/10.1155/2010/864165.

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Current transport and dynamic models of carbon nanotube field-effect transistors are presented. A model of single-walled carbon nanotube as interconnect is also presented and extended in modeling of single-walled carbon nanotube bundles. These models are applied in studying the performances of circuits such as the complementary carbon nanotube inverter pair and carbon nanotube as interconnect. Cadence/Spectre simulations show that carbon nanotube field-effect transistor circuits can operate at upper GHz frequencies. Carbon nanotube interconnects give smaller delay than copper interconnects use

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4

Hien, Dinh Sy. "Development of Quantum Simulator for Emerging Nanoelectronics Devices." ISRN Nanotechnology 2012 (August 28, 2012): 1–10. http://dx.doi.org/10.5402/2012/617214.

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We have developed NEMO-VN2, a new quantum device modeling tool that simulates a wide variety of quantum devices including the resonant tunneling diode, the single electron transistor, the molecular field effect transistor, the carbon nanotube field effect transistor, and the spin field effect transistor. In this work the nonequilibrium Green’s function is used to perform a comprehensive study of the emerging nanoelectronics devices. The program has been written by using graphic user interface of Matlab. NEMO-VN2 uses Matlab to solve Schrodinger equation to get current-voltage characteristics o

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5

Panahi, Abbas, and Ebrahim Ghafar-Zadeh. "Emerging Field-Effect Transistor Biosensors for Life Science Applications." Bioengineering 10, no. 7 (2023): 793. http://dx.doi.org/10.3390/bioengineering10070793.

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6

Smaani, Billel, Fares Nafa, Mohamed Salah Benlatrech, et al. "Recent progress on field-effect transistor-based biosensors: device perspective." Beilstein Journal of Nanotechnology 15 (August 6, 2024): 977–94. http://dx.doi.org/10.3762/bjnano.15.80.

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Over the last few decades, field-effect transistor (FET)-based biosensors have demonstrated great potential across various industries, including medical, food, agriculture, environmental, and military sectors. These biosensors leverage the electrical properties of transistors to detect a wide range of biomolecules, such as proteins, DNA, and antibodies. This article presents a comprehensive review of advancements in the architectures of FET-based biosensors aiming to enhance device performance in terms of sensitivity, detection time, and selectivity. The review encompasses an overview of emerg

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Hasan, Md Sakib, Samira Shamsir, Mst Shamim Ara Shawkat, Frances Garcia, and Syed K. Islam. "Multivariate Regression Polynomial: A Versatile and Efficient Method for DC Modeling of Different Transistors (MOSFET, MESFET, HBT, HEMT and G4FET)." International Journal of High Speed Electronics and Systems 27, no. 03n04 (2018): 1840016. http://dx.doi.org/10.1142/s0129156418400165.

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This work presents multivariate regression polynomial as a versatile and efficient method for DC modeling of modern transistors with very different underlying physics including MOSFET (metal-oxide-semiconductor field-effect transistor), MESFET (metal–semiconductor field-effect transistor), HBT (heterojunction bipolar transistor), HEMT (High-electron-mobility transistor) and a novel silicon-on-insulator four-gate transistors (G4FET). A set of available data from analytic solution, TCAD simulation, and experimental measurements for different operating conditions is used to empirically determine

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C., Venkataiah, Mallikarjuna Rao Y., Manjula Jayamma, et al. "Performance analysis of 4-bit ternary adder and multiplier using CNTFET for high speed arithmetic circuits." E3S Web of Conferences 391 (2023): 01221. http://dx.doi.org/10.1051/e3sconf/202339101221.

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Multiple valued logic (MVL) can represent an exponentially higher number of data/information compared to the binary logic for the same number of logic bits. Compared to the conventional devices, the emerging device technologies such as Graphene Nano Ribbon Field Effect Transistor (GNRFET) and carbon nanotube field effect transistor (CNTFET) appears to be very promising for designing MVL logic gates and arithmetic circuits due to some exceptional electrical properties such as the ability to control the threshold voltage. This variation of the threshold voltage is one of the prescribed technique

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9

Natarajamoorthy, Mathan, Jayashri Subbiah, Nurul Ezaila Alias, and Michael Loong Peng Tan. "Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design." Journal of Nanotechnology 2020 (April 30, 2020): 1–7. http://dx.doi.org/10.1155/2020/7608279.

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The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects. Graphene nanoribbon field-effect transistor (GNRFET) is an emerging technology that can potentially solve the issues of the conventional planar MOSFET imposed by quantum mechanical (QM) effects. GNRFET can also be used as static random-access memory (SRAM) circuit design due to its remarkable electronic properties. For high-speed operation, SRAM c

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10

Hu, Liang, Zhenyu Xu, Fangchao Long, et al. "Direct bandgap opening in sodium-doped antimonene quantum dots: an emerging 2D semiconductor." Materials Horizons 7, no. 6 (2020): 1588–96. http://dx.doi.org/10.1039/d0mh00440e.

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11

Matsumoto, Akira, and Yuji Miyahara. "Current and emerging challenges of field effect transistor based bio-sensing." Nanoscale 5, no. 22 (2013): 10702. http://dx.doi.org/10.1039/c3nr02703a.

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12

Syed Ahmad Faris, Sharifah Jamaliiah, Siti Aisyah Mualif, Norhana Jusoh, et al. "Design and Simulation of Graphene-Based Biosensor for SARS-CoV-2 Variants Detection." Journal of Human Centered Technology 3, no. 2 (2024): 29–35. http://dx.doi.org/10.11113/humentech.v3n2.71.

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In December 2019, a novel coronavirus, severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2), emerged in Wuhan City, China, and disseminated globally. The fatality rate increased until vaccines were used to control the infectious and morbidity rate worldwide. Key lessons learned from this 3-year pandemic emphasize the imperative to continually enhance diagnostic technologies for the specific detection of emerging viral infections. The COVID-19 pandemic demonstrated the emergence of multiple variants resulting from mutations in SARS-CoV-2, notably the recent and highly transmissible, Omi

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13

Jiao, Hanxue, Xudong Wang, Shuaiqin Wu, Yan Chen, Junhao Chu, and Jianlu Wang. "Ferroelectric field effect transistors for electronics and optoelectronics." Applied Physics Reviews 10, no. 1 (2023): 011310. http://dx.doi.org/10.1063/5.0090120.

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Ferroelectric materials have shown great value in the modern semiconductor industry and are considered important function materials due to their high dielectric constant and tunable spontaneous polarization. A ferroelectric field effect transistor (FeFET) is a field effect transistor (FET) with ferroelectric polarization field introduced to regulate carriers in semiconductors. With the coupling of ferroelectric and semiconductor, FeFETs are attractive for advanced electronic and optoelectronic applications, including emerging memories, artificial neural networks, high-performance photodetector

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14

Gherendi, Florin, Daniela Dobrin, and Magdalena Nistor. "Transparent Structures for ZnO Thin Film Paper Transistors Fabricated by Pulsed Electron Beam Deposition." Micromachines 15, no. 2 (2024): 265. http://dx.doi.org/10.3390/mi15020265.

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Thin film transistors on paper are increasingly in demand for emerging applications, such as flexible displays and sensors for wearable and disposable devices, making paper a promising substrate for green electronics and the circular economy. ZnO self-assembled thin film transistors on a paper substrate, also using paper as a gate dielectric, were fabricated by pulsed electron beam deposition (PED) at room temperature. These self-assembled ZnO thin film transistor source–channel–drain structures were obtained in a single deposition process using 200 and 300 µm metal wires as obstacles in the p

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15

Le, Phan Gia, Seong Hye Choi, and Sungbo Cho. "Alzheimer’s Disease Biomarker Detection Using Field Effect Transistor-Based Biosensor." Biosensors 13, no. 11 (2023): 987. http://dx.doi.org/10.3390/bios13110987.

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Alzheimer’s disease (AD) is closely related to neurodegeneration, leading to dementia and cognitive impairment, especially in people aged > 65 years old. The detection of biomarkers plays a pivotal role in the diagnosis and treatment of AD, particularly at the onset stage. Field-effect transistor (FET)-based sensors are emerging devices that have drawn considerable attention due to their crucial ability to recognize various biomarkers at ultra-low concentrations. Thus, FET is broadly manipulated for AD biomarker detection. In this review, an overview of typical FET features and their operat

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16

Rahi, Shiromani Balmukund, Shubham Tayal, and Abhishek Kumar Upadhyay. "A review on emerging negative capacitance field effect transistor for low power electronics." Microelectronics Journal 116 (October 2021): 105242. http://dx.doi.org/10.1016/j.mejo.2021.105242.

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17

Jin, Qingqing, Yunqi Xug, Mengmeng Li, and Ling Li. "38‐2: Small‐Subthreshold‐Swing and Low‐Voltage Organic Field‐Effect Transistors with Excellent Uniformity Using A Circular Architecture." SID Symposium Digest of Technical Papers 56, S1 (2025): 318–22. https://doi.org/10.1002/sdtp.18796.

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Organic field‐effect transistors have garnered extensive attention due to their unique advantages such as mechanical flexibility, low‐temperature processability, tunable optoelectronic properties, lightweight nature and potential for mass production, with immense potential in emerging fields such as the internet of things (IoT) and artificial intelligence (AI). However, organic transistors often utilize a high operating voltage (the maximum value between a drain voltage and a gate voltage) ranging from ±20 V to ±100 V, and their subthreshold swing (SS) is generally higher than 500 mV/dec. In t

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18

Martens, Koen, David Barge, Lijun Liu, et al. "(Invited) BioFETs and Nanopore FETs: Nanoscale Silicon Field-Effect Transistors for Single-Molecule Sensing." ECS Transactions 111, no. 1 (2023): 235–47. http://dx.doi.org/10.1149/11101.0235ecst.

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High read throughput single-molecule sensing is a cornerstone of established third generation long-read DNA sequencing technologies and is crucial for emerging protein sequencing technologies. These omics technologies are of great interest for essential understanding and applications in the life sciences. Field Effect Transistor (FET)-based single-molecule sensors promise advances in omics, by further enhancing read throughput with massive parallelization. Here an overview is given of our recent progress on nanoscale bioFETs and nanopore FETs (NPFETs).

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19

Chang, Jeesoo, Sungmin Hwang, Kyungchul Park, et al. "A Systematic Compact Model Parameter Calibration with Adaptive Pattern Search Algorithm." Applied Sciences 11, no. 9 (2021): 4155. http://dx.doi.org/10.3390/app11094155.

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A systematic device-model calibration (extraction) methodology has been proposed to reduce parameter calibration time of advanced compact model for modern nano-scale semiconductor devices. The adaptive pattern search algorithm is a variant of the direct search method, which explore in the parameter space with adaptive searching step and direction. It is very straightforward, but powerful, in high dimensional optimization problem since adaptive step and direction are decided by simple computation. The proposed method iterates less but shows superior accuracy over the conventional method. It is

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20

Choi, Wangmyung, Junhwan Choi, Yongbin Han, Hocheon Yoo, and Hong-Joon Yoon. "Polymer Dielectric-Based Emerging Devices: Advancements in Memory, Field-Effect Transistor, and Nanogenerator Technologies." Micromachines 15, no. 9 (2024): 1115. http://dx.doi.org/10.3390/mi15091115.

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Polymer dielectric materials have recently attracted attention for their versatile applications in emerging electronic devices such as memory, field-effect transistors (FETs), and triboelectric nanogenerators (TENGs). This review highlights the advances in polymer dielectric materials and their integration into these devices, emphasizing their unique electrical, mechanical, and thermal properties that enable high performance and flexibility. By exploring their roles in self-sustaining technologies (e.g., artificial intelligence (AI) and Internet of Everything (IoE)), this review emphasizes the

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21

Koinkar, Pankaj, Yu Ohsumi, Akihiro Furube, et al. "Field effect transistor behavior of Bi2Se3 nanostructure prepared by laser ablation." Modern Physics Letters B 33, no. 14n15 (2019): 1940015. http://dx.doi.org/10.1142/s0217984919400153.

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A new class of emerging materials known as topological insulators (TIs), such as bismuth selenide [Formula: see text], has an insulating band gap in the bulk and gapless surface state protected by its intrinsic time-reversal symmetry. These TI materials have attracted great attention because of their possible prospects in electrical and optical applications. In this work, we have prepared the [Formula: see text] nanostructure using the nanosecond (ns) pulse laser ablation in liquid environment to study the field effect transistor behavior. After the laser ablation, [Formula: see text] nanostru

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22

Ji, Mengdie, and Guli Zhu. "Semiconductor Switch: Key Components and Future Developments in Power Electronics." MATEC Web of Conferences 404 (2024): 02002. http://dx.doi.org/10.1051/matecconf/202440402002.

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The rapid development of modern industry has led to the expansion of the demand for high-end devices in a wider range of fields. Semiconductor switches have also become a popular research area as key components in electronic engineering. It also plays an important role in controlling current and regulating power transmission. The performance requirements for semiconductor switches have gradually increased to meet higher current controlling and power transmission requirements. This paper provides a comprehensive introduction to the basic operating principles and structural components of semicon

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23

Huang, Junyuan. "Research Progresses on Suppressing the Short-Channel Effects of Field-Effect Transistor." Highlights in Science, Engineering and Technology 27 (December 27, 2022): 361–67. http://dx.doi.org/10.54097/hset.v27i.3779.

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Recently, with the continuous miniaturization and integration of microelectronic devices in all fields, the conventional MOSFET structure has suffered from severe short channel effects with continuous downsizing. In order to further improve the electrical properties of Very Large-Scale Integration Circuit (VLSI) and obtain the larger device integration density in circuits, new revolution in MOSFET technology is needed, which involves the innovations of new materials, new technologies, and new device structures. This paper explores device structure innovations in traditional planar transistors,

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24

Zhou, Jingfeng. "Advantages, manufacturing processes and challenges of FinFET technology." Journal of Physics: Conference Series 2798, no. 1 (2024): 012045. http://dx.doi.org/10.1088/1742-6596/2798/1/012045.

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Abstract As an emerging cutting-edge integrated circuit technology, Fin Field Effect Transistor (FinFET) has not only successfully broken through the limitations of the 22nm node since its development in 1998, but it still maintains considerable vitality and is developing into smaller sizes. As an improvement over traditional MOSFET technology, FinFET offers many technical advantages, which practically solve the challenges encountered by traditional MOSFET. The FinFET process technology is incompatible with planar MOSFET process technology. Moreover, since the development of Finfet technology,

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25

Lin, Jie, and Jiann-Shiun Yuan. "Ultra-Low Power Successive Approximation Analog-to-Digital Converter Using Emerging Tunnel Field Effect Transistor Technology." Journal of Low Power Electronics 12, no. 3 (2016): 218–26. http://dx.doi.org/10.1166/jolpe.2016.1445.

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26

Lee, Sumi, Yejoo Choi, Sang Min Won, Donghee Son, Hyoung Won Baac, and Changhwan Shin. "Design of JL-CFET (junctionless complementary field effect transistor)-based inverter for low power applications." Semiconductor Science and Technology 37, no. 3 (2022): 035019. http://dx.doi.org/10.1088/1361-6641/ac41e6.

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Abstract Junctionless complementary field effect transistor (JL-CFET) is an emerging device that needs a small layout area and low fabrication cost. However, in order for the JL-CFET to be adopted for low power applications, two main constraints need to be overcome: (a) a high work function of metal gate and (b) a low drain current. In this work, an optimal device design is proposed to overcome those problems, by analyzing various performance metrics, such as on-state drive current, subthreshold swing, drain induced barrier lowering, propagation delay time, and ring oscillator’s oscillation fr

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27

Fu, Yafei, Jie Sun, Zaifa Du, et al. "Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor." Materials 12, no. 3 (2019): 428. http://dx.doi.org/10.3390/ma12030428.

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Micro-light-emitting diodes (micro-LEDs) are the key to next-generation display technology. However, since the driving circuits are typically composed of Si devices, numerous micro-LED pixels must be transferred from their GaN substrate to bond with the Si field-effect transistors (FETs). This process is called massive transfer, which is arguably the largest obstacle preventing the commercialization of micro-LEDs. We combined GaN devices with emerging graphene transistors and for the first-time designed, fabricated, and measured a monolithic integrated device composed of a GaN micro-LED and a

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28

Gil-Tomàs, Gracia-Morán, Saiz-Adalid, and Gil-Vicente. "Fault Modeling of Graphene Nanoribbon FET Logic Circuits." Electronics 8, no. 8 (2019): 851. http://dx.doi.org/10.3390/electronics8080851.

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Due to the increasing defect rates in highly scaled complementary metal–oxide–semiconductor (CMOS) devices, and the emergence of alternative nanotechnology devices, reliability challenges are of growing importance. Understanding and controlling the fault mechanisms associated with new materials and structures for both transistors and interconnection is a key issue in novel nanodevices. The graphene nanoribbon field-effect transistor (GNR FET) has revealed itself as a promising technology to design emerging research logic circuits, because of its outstanding potential speed and power properties

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29

Musalgaonkar, Gaurav, Shubham Sahay, Raghvendra Sahai Saxena, and Mamidala Jagadesh Kumar. "A Line Tunneling Field-Effect Transistor Based on Misaligned Core–Shell Gate Architecture in Emerging Nanotube FETs." IEEE Transactions on Electron Devices 66, no. 6 (2019): 2809–16. http://dx.doi.org/10.1109/ted.2019.2910156.

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30

Bracciale, Maria Paola, Guhyun Kwon, Dongil Ho, Choongik Kim, Maria Laura Santarelli, and Assunta Marrocchi. "Synthesis, Characterization, and Thin-Film Transistor Response of Benzo[i]pentahelicene-3,6-dione." Molecules 27, no. 3 (2022): 863. http://dx.doi.org/10.3390/molecules27030863.

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Organic semiconductors hold the promise of simple, large area solution deposition, low thermal budgets as well as compatibility with flexible substrates, thus emerging as viable alternatives for cost-effective (opto)-electronic devices. In this study, we report the optimized synthesis and characterization of a helically shaped polycyclic aromatic compound, namely benzo[i]pentahelicene-3,6-dione, and explored its use in the fabrication of organic field effect transistors. In addition, we investigated its thermal, optical absorption, and electrochemical properties. Finally, the single crystal X-

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31

Crippa, Paolo, Giorgio Biagetti, Lorenzo Minelli, et al. "Next-Generation Hybrid RF Front-End with MoS2-FET Supply Management Circuit, CNT-FET Amplifiers, and Graphene Thin-Film Antennas." Electronics 11, no. 22 (2022): 3708. http://dx.doi.org/10.3390/electronics11223708.

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One-dimensional (1D) and two-dimensional (2D) materials represent the emerging technologies for transistor electronics in view of their attractive electrical (high power gain, high cut-off frequency, low power dissipation) and mechanical properties. This work investigates the integration of carbon-nanotube-based field-effect transistors (CNT-FETs) and molybdenum disulphide (MoS2)-based FETs with standard CMOS technology for designing a simple analog system integrating a power switching circuit for the supply management of a 10 GHz transmitting/receiving (T/R) module that embeds a low-noise amp

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32

Ma, Yue, Jinshun Bi, Hanbin Wang, et al. "Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures." Nanomaterials 12, no. 23 (2022): 4344. http://dx.doi.org/10.3390/nano12234344.

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In the emerging process-based transistors, random telegraph noise (RTN) has become a critical reliability problem. However, the conventional method to analyze RTN properties may not be suitable for the advanced silicon-on-insulator (SOI)-based transistors, such as the fully depleted SOI (FDSOI)-based transistors. In this paper, the mechanism of RTN in a 22-nm FDSOI-based metal–oxide–semiconductor field-effect transistor (MOSFET) is discussed, and an improved approach to analyzing the relationship between the RTN time constants, the trap energy, and the trap depth of the device at cryogenic tem

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Et.al, R. Jeyarohini. "A performance Analysis of DM-DG and TM-DG TFETs Analytical Models for Low Power Applications." Turkish Journal of Computer and Mathematics Education (TURCOMAT) 12, no. 3 (2021): 4642–51. http://dx.doi.org/10.17762/turcomat.v12i3.1874.

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Device Modeling is utilized to engendering incipient device models for the demeanor of the electrical devices predicated on fundamental physics. Modeling of the device may also include the creation of Compact models. An emerging device type of transistor is the Tunnel Field-Effect transistor that achieves compactness and speed during device modeling. This article presents an analytical comparative study of duel material DG TFETs and triple Material DG TFETs with gate oxide structure . Here the implementation of device modeling is done by solving Poisson’s equation with Parabolic Approximation

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Miyata, Noriyuki. "Nonlinear Dynamics in HfO2/SiO2-Based Interface Dipole Modulation Field-Effect Transistors for Synaptic Applications." Electronics 13, no. 4 (2024): 726. http://dx.doi.org/10.3390/electronics13040726.

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In the pursuit of energy-efficient spiking neural network (SNN) hardware, synaptic devices leveraging emerging memory technologies hold significant promise. This study investigates the application of the recently proposed HfO2/SiO2-based interface dipole modulation (IDM) memory for synaptic spike timing-dependent plasticity (STDP) learning. Firstly, through pulse measurements of IDM metal–oxide–semiconductor (MOS) capacitors, we demonstrate that IDM exhibits an inherently nonlinear and near-symmetric response. Secondly, we discuss the drain current response of a field-effect transistor (FET) i

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Chen, Songyue, Hepeng Dong, and Jing Yang. "Surface Potential/Charge Sensing Techniques and Applications." Sensors 20, no. 6 (2020): 1690. http://dx.doi.org/10.3390/s20061690.

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Surface potential and surface charge sensing techniques have attracted a wide range of research interest in recent decades. With the development and optimization of detection technologies, especially nanosensors, new mechanisms and techniques are emerging. This review discusses various surface potential sensing techniques, including Kelvin probe force microscopy and chemical field-effect transistor sensors for surface potential sensing, nanopore sensors for surface charge sensing, zeta potentiometer and optical detection technologies for zeta potential detection, for applications in material p

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Arora, Sneha, and Suman Lata Tripathi. "High Performance Mixed Logic Decoders using MOS like GNRFET in 22nm Technology." Journal of Physics: Conference Series 2327, no. 1 (2022): 012011. http://dx.doi.org/10.1088/1742-6596/2327/1/012011.

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Abstract Graphene nano ribbon field effect transistor is an emerging field of research in VLSI technology beyond 32nm. VLSI main motive is to reduce power consumption and other parameters such as delay, PDP (power delay product) to improve the efficiency. This article discusses the requirement for high-performance applications that use little power. However, employing low-power devices for high-rank applications such as microprocessors, digital signal processors, and static random-access memory (SRAM) is very challenging. In the field of memory design and logical circuit design, it is well rec

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Lohani, Anish Prasad, Mohamed Elosta, Mahmoud Maksoud, and Nimer Murshid. "Functionalized Carbon Nanotubes: Emerging Nanomaterials for Enhanced Cancer Diagnosis and Imaging." Molecules 30, no. 11 (2025): 2364. https://doi.org/10.3390/molecules30112364.

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Cancer remains a leading global cause of mortality, highlighting the critical need for effective early diagnosis. Despite advancements in treatment, early detection and imaging continue to pose significant challenges. Functionalized carbon nanotubes (CNTs) have emerged as promising nanomaterials due to their unique structural properties and versatile functionalization strategies. This review explores the role of both covalent (e.g., fluorination, hydrogenation, cycloadditions, aryldiazonium salt reduction, organometallic ion attachment, carboxylation, amidation, esterification, and metallic na

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Al-mashaal, Asaad K. Edaan. "ELECTROMECHANICAL PRESSURE SENSORS BASED ON GRAPHENE: A REVIEW." International Journal Multidisciplinary (IJMI) 1, no. 4 (2024): 16–27. https://doi.org/10.61796/ijmi.v1i4.230.

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Nanotechnology can revolutionize the sensor industry by introducing specific nanomaterials to work as sensing elements. Graphene, a two-dimensional carbon allotrope with exceptional electrical and mechanical properties, has emerged as a promising material for developing high-performance pressure sensors. Graphene-based pressure sensors offer significant advantages over traditional sensors, including high sensitivity, wide dynamic range, fast response time, and flexibility. This paper aims to deliver a review on the fundamental mechanisms underlying graphene-based pressure sensors, which includ

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Tamersit, Khalil, Abdellah Kouzou, José Rodriguez, and Mohamed Abdelrahem. "Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection." Nanomaterials 14, no. 2 (2024): 220. http://dx.doi.org/10.3390/nano14020220.

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In this paper, a new junctionless graphene nanoribbon tunnel field-effect transistor (JLGNR TFET) is proposed as a multi-gas nanosensor. The nanosensor has been computationally assessed using a quantum simulation based on the self-consistent solutions of the mode space non-equilibrium Green’s function (NEGF) formalism coupled with the Poisson’s equation considering ballistic transport conditions. The proposed multi-gas nanosensor is endowed with two top gates ensuring both reservoirs’ doping and multi-gas sensing. The investigations have included the IDS-VGS transfer characteristics, the gas-i

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Wang, Lishuang, Nan Li, Xiaoyan Zhang, Ivan Bobrinetskiy, Ivana Gadjanski, and Wangyang Fu. "Sensing with Molecularly Imprinted Membranes on Two-Dimensional Solid-Supported Substrates." Sensors 24, no. 16 (2024): 5119. http://dx.doi.org/10.3390/s24165119.

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Molecularly imprinted membranes (MIMs) have been a focal research interest since 1990, representing a breakthrough in the integration of target molecules into membrane structures for cutting-edge sensing applications. This paper traces the developmental history of MIMs, elucidating the diverse methodologies employed in their preparation and characterization on two-dimensional solid-supported substrates. We then explore the principles and diverse applications of MIMs, particularly in the context of emerging technologies encompassing electrochemistry, surface-enhanced Raman scattering (SERS), su

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Woo, SangMin, HyunJoon Jeong, JinYoung Choi, HyungMin Cho, Jeong-Taek Kong, and SoYoung Kim. "Machine-Learning-Based Compact Modeling for Sub-3-nm-Node Emerging Transistors." Electronics 11, no. 17 (2022): 2761. http://dx.doi.org/10.3390/electronics11172761.

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In this paper, we present an artificial neural network (ANN)-based compact model to evaluate the characteristics of a nanosheet field-effect transistor (NSFET), which has been highlighted as a next-generation nano-device. To extract data reflecting the accurate physical characteristics of NSFETs, the Sentaurus TCAD (technology computer-aided design) simulator was used. The proposed ANN model accurately and efficiently predicts currents and capacitances of devices using the five proposed key geometric parameters and two voltage biases. A variety of experiments were carried out in order to creat

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Moon, Yeon-Keon, Dae-Yong Moon, Sang-Ho Lee, Chang-Oh Jeong, and Jong-Wan Park. "High Performance Thin Film Transistor with ZnO Channel Layer Deposited by DC Magnetron Sputtering." Journal of Nanoscience and Nanotechnology 8, no. 9 (2008): 4557–60. http://dx.doi.org/10.1166/jnn.2008.ic24.

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Research in large area electronics,1 especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs).2–5 ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputter

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Lim, Wei Yin, Boon Leong Lan, and Narayanan Ramakrishnan. "Emerging Biosensors to Detect Severe Acute Respiratory Syndrome Coronavirus 2 (SARS-CoV-2): A Review." Biosensors 11, no. 11 (2021): 434. http://dx.doi.org/10.3390/bios11110434.

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Coronavirus disease (COVID-19) is a global health crisis caused by the severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2). Real-time reverse transcriptase-polymerase chain reaction (RT-PCR) is the gold standard test for diagnosing COVID-19. Although it is highly accurate, this lab test requires highly-trained personnel and the turn-around time is long. Rapid and inexpensive immuno-diagnostic tests (antigen or antibody test) are available, but these point of care (POC) tests are not as accurate as the RT-PCR test. Biosensors are promising alternatives to these rapid POC tests. Here we

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Lee, Seung-Jin, and Won-Ju Cho. "Emerging Dual-Gate FET Sensor Paradigm for Ultra-Low Concentration Cortisol Detection in Complex Bioenvironments." Biosensors 15, no. 3 (2025): 134. https://doi.org/10.3390/bios15030134.

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Cortisol is a pivotal hormone regulating stress responses and is linked to various health conditions, making precise and continuous monitoring essential. Despite their non-invasive nature, conventional cortisol detection methods often suffer from inadequate sensitivity and reliability at low concentrations, limiting their diagnostic utility. To address these limitations, this study introduces a novel paradigm for high sensitivity cortisol detection using field-effect transistor (FET) sensors with dual-gate (DG) structures. The proposed sensor platform enhances sensitivity through capacitive co

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Gong, Xiao, Kaizhen Han, Chen Sun, et al. "Beol-Compatible Ingazno-Based Devices for 3D Integrated Circuits." ECS Meeting Abstracts MA2022-02, no. 32 (2022): 1186. http://dx.doi.org/10.1149/ma2022-02321186mtgabs.

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Due to its attractive materials and electrical properties, indium-gallium-zinc-oxide (IGZO) has been extensively researched in many emerging technologies, especially for three-dimensional (3D) monolithic integration and back-end-of-line (BEOL) compatible applications [1]. On the pathway toward the realization of high-performance 3D monolithic integrated chips (ICs), a wide range of building blocks with different functionalities are required. 3D monolithic ICs also demand optimization in device performance and circuit architecture design. In this paper, we discuss our recent research developmen

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Liu, Xiyao. "Comparative Analysis of Characteristics and Application Fields of SiC and GaN MOS Tube." Highlights in Science, Engineering and Technology 111 (August 19, 2024): 438–44. https://doi.org/10.54097/9d262220.

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The characteristics and application fields of silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect transistor (MOSEFT) and gallium nitride (GaN) MOSFET are compared and analyzed in this paper. SiC MOSFETs have advantages such as high melting point and thermal stability, high electron mobility, high breakdown field strength, low electron drift rate and high thermal conductivity. On the flip side, GaN MOSFETs are renowned for their lightning-fast switching speeds and efficient performance, making them suitable for a wide range of electronic systems. The investigation examined the structu

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Sverdlov, Viktor, and Siegfried Selberherr. "Demands for spin-based nonvolatility in emerging digital logic and memory devices for low power computing." Facta universitatis - series: Electronics and Energetics 31, no. 4 (2018): 529–45. http://dx.doi.org/10.2298/fuee1804529s.

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Miniaturization of semiconductor devices is the main driving force to achieve an outstanding performance of modern integrated circuits. As the industry is focusing on the development of the 3nm technology node, it is apparent that transistor scaling shows signs of saturation. At the same time, the critically high power consumption becomes incompatible with the global demands of sustaining and accelerating the vital industrial growth, prompting an introduction of new solutions for energy efficient computations. Probably the only radically new option to reduce power consumption in novel integrat

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Khound, Sagarika, Jayanta K. Sarmah, and Ranjit Sarma. "Hybrid La₂O₃-cPVP Dielectric for Organic Thin Film Transistor Applications." ECS Journal of Solid State Science and Technology 11, no. 1 (2022): 013007. http://dx.doi.org/10.1149/2162-8777/ac4a7e.

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In this work, we have studied the electrical performance of cross-linked polyvinyl phenol (cPVP) modified lanthanum oxide (La2O3) bilayer dielectric film in pentacene thin film transistors (TFT). A simple spin-coating and room temperature operated cross-linking reaction of the hydroxyl moieties of PVP and the nitrogen groups of PMF were carried out to form the cross-linked PVP. The deposition of a thin 30 nm cPVP layer over the La2O3 layer provided a low leakage current (<10−7 A cm−2), causing a reduction in the interface trap density. Besides, the modified surface properties of the La2O3 l

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Lefler, Sharon, Berta Ben-Shachar, Hila Masasa, David Schreiber, and Idan Tamir. "Potentio-tunable FET sensor having a redox-polarizable single electrode for the implementation of a wearable, continuous multi-analyte monitoring device." Analytical and Bioanalytical Chemistry 414, no. 10 (2022): 3267–77. http://dx.doi.org/10.1007/s00216-022-03911-0.

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AbstractThe emerging field of wearable devices for monitoring bioanalytes calls for the miniaturization of biochemical sensors. The only commercially available electrochemical wearable monitoring medical devices for bioanalytes are the amperometric continuous glucose monitoring (CGM) systems. The use of such amperometric methods to monitor glucose levels requires a relatively large electrode surface area for sufficient redox species collection, allowing accurate measurements to be made. Consequently, miniaturization of such sensors bearing large electrodes is challenging. Furthermore, it is di

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Alves, Wendell, Lenin Morais, and Porfirio Cortizo. "Design of an Highly Efficient AC-DC-AC Three-Phase Converter Using SiC for UPS Applications." Electronics 7, no. 12 (2018): 425. http://dx.doi.org/10.3390/electronics7120425.

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With the constant increase of energy consumption in the world, the efficiency of systems and equipment is becoming more important. Uninterruptible Power Supply (UPS) is an equipment that provides safe and reliable supply for critical load systems, that is, systems where a supply interruption can lead to economical or even human losses. The Double Conversion UPS is the most complete UPS class in terms of load protection, regulation, performance, and reliability, however, it has lower efficiency and higher cost because of its high number of power converters. Silicon Carbide devices are emerging

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