Relevant bibliographies by topics / Energy band gap

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Energy band gap'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Energy band gap.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Energy band gap"

1

Zhanabaev, Z. Zh. "WIDTH OF ENERGY BAND GAP OF NANOPOROUS SEMICONDUCTOR FILMS." Eurasian Physical Technical Journal 17, no. 2 (December 24, 2020): 39–44. http://dx.doi.org/10.31489/2020no2/39-44.

Full text
Abstract:
The aim of this work is to experimentally clarify the reasons for the appearance of jumps in the current and memory of semiconductor nanoporous structures.Porous nanostructures were obtained by electrochemical etching. The current-voltage characteristics of the samples were measured for porous silicon and on thin films of a chalcogenide glassy semiconductor. The existence of jump-like switching and current hysteresis in porous silicon nanofilms under laser illumination is shown experimentally.A connection between the switching voltage values and the dependence of the band gap on the porosity of nanofilms is found. These results make it possible to construct a theory of current switching and its hysteresis based on the concepts of the theory of second-order phase transitions.
APA, Harvard, Vancouver, ISO, and other styles
2

Plekhanov, V. G., and N. V. Plekhanov. "Isotope dependence of band-gap energy." Physics Letters A 313, no. 3 (June 2003): 231–37. http://dx.doi.org/10.1016/s0375-9601(03)00760-6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Nag, B. R. "Direct band-gap energy of semiconductors." Infrared Physics & Technology 36, no. 5 (August 1995): 831–35. http://dx.doi.org/10.1016/1350-4495(95)00023-r.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Et. al., Sharibayev Nosirjon Yusufjanovich,. "Temperature Dependence Of Energy States And Band Gap Broadening." Turkish Journal of Computer and Mathematics Education (TURCOMAT) 12, no. 4 (April 11, 2021): 53–60. http://dx.doi.org/10.17762/turcomat.v12i4.471.

Full text
Abstract:
Statistical analysis of energy levels is carried out. The density of surface states of MIS structures based on silicon is investigated. A mathematical model is constructed for the temperature dependence of the spectrum of the density of surface states for a wide energy range. A formula is derived for the density of surface states as a function of temperature. The thermal contributions of the expanded bands to the band gap of the semiconductor are taken into account. The resulting formula allows one to determine the density of energy states in the forbidden band in an explicit form, without taking into account the influence of the broadening of the allowed bands. This improves the accuracy of determining the concentration of impurities and defects in silicon.
APA, Harvard, Vancouver, ISO, and other styles
5

Patidar, Dinu, K. S. Rathore, N. S. Saxena, Kananbala Sharma, and T. P. Sharma. "Energy Band Gap Studies of CdS Nanomaterials." Journal of Nano Research 3 (October 2008): 97–102. http://dx.doi.org/10.4028/www.scientific.net/jnanor.3.97.

Full text
Abstract:
The CdS nanoparticles of different sizes are synthesized by a simple chemical method. Here, CdS nanoparticles are grown through the reaction of solution of different concentration of CdCl2 with H2S. X-ray diffraction pattern confirms nano nature of CdS and has been used to determine the size of particle. Optical absorption spectroscopy is used to measure the energy band gap of these nanomaterials by using Tauc relation. Energy band gap ranging between 3.12 eV to 2.47 eV have been obtained for the samples containing the nanoparticles in the range of 2.3 to 6.0 nm size. A correlation between the band gap and size of the nanoparticles is also established.
APA, Harvard, Vancouver, ISO, and other styles
6

Boakye, F., and D. Nusenu. "The energy band gap of cadmium sulphide." Solid State Communications 102, no. 4 (April 1997): 323–26. http://dx.doi.org/10.1016/s0038-1098(97)00012-4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Paduano, Qing S., David W. Weyburne, Lionel O. Bouthillette, Shen-Qi Wang, and Michael N. Alexander. "The Energy Band Gap of AlxGa1-xN." Japanese Journal of Applied Physics 41, Part 1, No. 4A (April 15, 2002): 1936–40. http://dx.doi.org/10.1143/jjap.41.1936.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Zhong, Shuying, Musheng Wu, and Xueling Lei. "First-principle calculations of effective mass of silicon crystal with vacancy defects." Materials Science-Poland 34, no. 4 (December 1, 2016): 916–23. http://dx.doi.org/10.1515/msp-2016-0128.

Full text
Abstract:
AbstractThe energy band structures and electron (hole) effective masses of perfect crystalline silicon and silicon with various vacancy defects are investigated by using the plane-wave pseudopotential method based on density functional theory. Our results show that the effect of monovacancy and divacancy on the energy band structure of crystalline silicon is primarily reflected in producing the gap states and the local states in valence band maximum. It also causes breaking the symmetry of energy bands resulting from the Jahn-Teller effect, while only producing the gap states for the crystalline silicon with hexavacancy ring. However, vacancy point defects could not essentially affect the effective masses that are derived from the native energy bands of crystalline silicon, except for the production of defect states. Simultaneously, the Jahn-Teller distortions only affect the gap states and the local states in valence band maximum, but do not change the symmetry of conduction band minimum and the nonlocal states in valence band maximum, thus the symmetry of the effective masses. In addition, we study the electron (hole) effective masses for the gap states and the local states in valence band maximum.
APA, Harvard, Vancouver, ISO, and other styles
9

Indriani, Devi, Helga Dwi Fahyuan, and Ngatijo Ngatijo. "UJI UV-VIS LAPISAN TiO2/N2 UNTUK MENENTUKAN BAND GAP ENERGY." JOURNAL ONLINE OF PHYSICS 3, no. 2 (November 13, 2018): 6–10. http://dx.doi.org/10.22437/jop.v3i2.5142.

Full text
Abstract:
[Title: TEST UV-VIS LAYER TiO2/N2 FOR DETERMINING BAND GAP ENERGY] The effect of nitrogen doping variation on energy band gap in TiO2 layer grown by doctor blade technique. The TiO2/N2 layer was prepared with concentrations of 0%, 15%, 25% and 25% calcined at 500°C for 3 hours. Characterization of band gap energy by using the UV-Vis spectrometer at a wavelength range of 200 nm-700 nm. The band gap energy is obtained by using the Swanepoel equation and Touch Plot method. The results showed that doping of nitrogen can decrease the band gap energy of 3.9250 eV, 3.8750 eV, 3.8375 eV and 3.9125 eV, respectively. The smallest energy band gap is obtained at 25% concentration that is 3.8375eV. Keywords: Coating TiO2/N2, transmittance, Band gap energy
APA, Harvard, Vancouver, ISO, and other styles
10

Diwan, Bhoopendra Dhar, and Vinod Kumar Dubey. "Influence of Size on Effective Band Gap of Silicon Nano-Wire." Advanced Materials Research 938 (June 2014): 322–26. http://dx.doi.org/10.4028/www.scientific.net/amr.938.322.

Full text
Abstract:
In this article, the effect of wire-size on the effective band gap of Silicon (Si) is analyzed. The band gap is one of the most significant electronic parameters of semiconductor material. The band gap of semiconductor depends on temperature, pressure, composition, number of atoms as well as on the size of the particle. When semiconductors are synthesized at nanoscale level, their small particle size gives rise to quantum confinement and the energy bands are split into discrete levels. It is observed that effective band gap of semi-conductor depends on the size of the wire (number of atoms and dimensions) and it increases by decreasing the size of Si nanowire. The size quantization effect is noticed as a shift of the effective band gap toward lower values with increasing temperature of Si nanowire which also shows increase in atomic vibrations. Keywords: Size effect; Energy band gap; Semiconductor, effective mass; nanowire.
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "Energy band gap"

1

Ji, Zhonghang. "Strain-induced Energy Band-gap Opening of Silicene." Wright State University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=wright1432635166.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Cammisa, Eduardo G. "Synthesis of low band gap polymers." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2000. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape3/PQDD_0019/MQ55489.pdf.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Sodipe, Olukayode O. "Wide-band Gap Devices for DC Breaker Applications." DigitalCommons@CalPoly, 2016. https://digitalcommons.calpoly.edu/theses/1529.

Full text
Abstract:
With the increasing interest in wide-band gap devices, their potential benefits in power applications have been studied and explored with numerous studies conducted for both SiC and GaN devices. This thesis investigates the use of wide-band gap devices as the switching element in a semiconductor DC breaker. It involves the design of an efficient semiconductor DC breaker, its simulation in SPICE, construction of a hardware prototype and the comparative study of SiC and Si versions of the aforementioned breaker. The results obtained from the experiments conducted in the process of concluding this thesis show that the SiC version of the breaker is a superior option for a semiconductor DC breaker.
APA, Harvard, Vancouver, ISO, and other styles
4

Kammler, Marvin. "MD simulations of atomic hydrogen scattering from zero band-gap materials." Doctoral thesis, Niedersächsische Staats- und Universitätsbibliothek Göttingen, 2019. http://hdl.handle.net/21.11130/00-1735-0000-0003-C17A-A.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Nisar, Jawad. "Atomic Scale Design of Clean Energy Materials : Efficient Solar Energy Conversion and Gas Sensing." Doctoral thesis, Uppsala universitet, Materialteori, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-179372.

Full text
Abstract:
The focus of this doctoral thesis is the atomic level design of photocatalysts and gas sensing materials. The band gap narrowing in the metal oxides for the visible-light driven photocatalyst as well as the interaction of water and gas molecules on the reactive surfaces of metal oxides and the electronic structure of kaolinite has been studied by the state-of-art calculations. Present thesis is organized into three sections. The first section discusses the possibility of converting UV active photocatalysts (such as Sr2Nb2O7, NaTaO3, SrTiO3, BiTaO4 and BiNbO4) into a visible active photocatalysts by their band gap engineering. Foreign elements doping in wide band gap semiconductors is an important strategy to reduce their band gap. Therefore, we have investigated the importance of mono- and co-anionic/cationic doping on UV active photocatalysts. The semiconductor's band edge position is calculated with respect to the water oxidation/reduction potential for various doping. Moreover, the tuning of valence and conduction band edge position is discussed on the basis of dopant's p/d orbital energy. In the second section of thesis the energetic, electronic and optical properties of TiO2, NiO and β-Si3N4 have been discussed to describe the adsorption mechanism of gas molecules at the surfaces. The dissociation of water into H+ or OH- occurs on the O-vacancy site of the (001)-surface of rutile TiO2 nanowire, which is due to the charge transfer from Ti atom to water molecule. The dissociation of water into OH- and imino (NH) groups is also observed on the β-Si3N4 (0001)-surface due to the dangling bonds of the lower coordinated N and Si surface atoms. Fixation of the SO2 molecules on the anatase TiO2 surfaces with O-deficiency have been investigated by Density Functional Theory (DFT) simulation and Fourier Transform Infrared (FTIR) spectroscopy. DFT calculations have been employed to explore the gas-sensing mechanism of NiO (100)-surface on the basis of energetic and electronic properties. In the final section the focus is to describe the optical band gap of pristine kaolinite using the hybrid functional method and GW approach. Different possible intrinsic defects in the kaolinite (001) basal surface have been studied and their effect on the electronic structure has been explained. The detailed electronic structure of natural kaolinite has been determined by the combined efforts of first principles calculations and Near Edge X-ray Absorption Fine Structure (NEXAFS).
APA, Harvard, Vancouver, ISO, and other styles
6

Hughes, Alison Frances. "A new theory of lasers with application to photonic band gap materials." Thesis, King's College London (University of London), 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368127.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Kevin, Punarja. "On the synthesis, measurement and applications of solar energy materials and devices." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/on-the-synthesis-measurement-and-applications-of-solar-energy-materials-and-devices(9273d60d-cc5a-4992-8fae-ac9ddefa506b).html.

Full text
Abstract:
Second generation solar cells based on thin film semiconductors emerged as a result of the past ten years of intense research in the thin film preparation technology. Thin film solar cell technology can be cost effective as it uses comparatively cheap materials suitable for solar building integration. Chemical Vapour Deposition (CVD) is a well-known method for the deposition of high quality thin films. This thesis describes the synthesis of novel tin(II)dithiocarbamate [Sn(S2CNEt2)2] and bis(diphenylphosphinediselenoato) tin(II) [Sn(Ph2PSe2)2] and these complexes as single source precursor for the deposition of SnS and SnSe and by using the combination of [Sn(Ph2PSe2)2] with [Cu(acac)2], Cu2SnSe3 thin films were deposited by AACVD. By using suitable combinations of metal complexes ([nBu2Sn(S2CNEt2)2], [Cu(S2CNEt2)2] [Zn(S2CNEt2)2] [Zn(Se2CNEt2)2] [Zn(acac)2], [Sn(OAc)4], [Cu(PPh3){Ph2P(Se)NP(Se)Ph2}] thin films and nanocomposites of CZTS, CFTS, CZTSe, CFTSe, CZFTS, , CZFTSe, CZTSSE, CFTSSe and CZFTSSe were prepared. The effect of precursor concentration and deposition temperature on the structure, morphology and composition of the thin films were studied in detail using by powder X-ray diffraction (p-XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM), selected area electron diffraction (SAED) and elemental mapping. This thesis addressing the structural inhomogeneity, control of growth and material characterization is expected to yield closer performance parity between CZTS-Se and CIGS solar cells. A series of systematic experiments were carried out. Through AACVD and simple solvothermal methods CZFTS nanoparticles and thin films were prepared. The simple, potentially, low-cost nature of the CZTS nanoparticles and the enhancement of charge carrier mobility achieved suggest that these nanoparticles have potential in the improvement of OFETs and perhaps other organic electronic devices.
APA, Harvard, Vancouver, ISO, and other styles
8

Piazzetta, Rubyan Lucas Santos. "COMPORTAMENTO ÓPTICO E TÉRMICO EM FUNÇÃO DA ESTRUTURA DO SISTEMA VÍTREO TeO2-Li2O-ZnO." UNIVERSIDADE ESTADUAL DE PONTA GROSSA, 2015. http://tede2.uepg.br/jspui/handle/prefix/842.

Full text
Abstract:
Made available in DSpace on 2017-07-21T19:25:46Z (GMT). No. of bitstreams: 1 Rubyan Lucas Santos Piazzetta.pdf: 4250981 bytes, checksum: c1d20c3e7f1d1d4307bef8d9dee045f7 (MD5) Previous issue date: 2015-03-23
Fundação Araucária de Apoio ao Desenvolvimento Científico e Tecnológico do Paraná
This work studied tellurite glasses in a ternary system with the TeO2-Li2O-ZnO composition, divided in three groups with 10%, 15% and 20%mol Li2O fixed. For this study, was made the replacement of known TeO2 network former by ZnO. It used the Differential Scanning Calorimetry (DSC), optical absorption in ultraviolet-visible region (UV-VIS), Raman spectroscopy, Fourier transform infrared (FTIR), linear refractive index (n0) measurement and instrumented nanoindentation. The samples were prepared by melt quenching method in the bulk form. DSC results showed that the glass transition temperature (TG) virtually no change in the glass systems, while that there was an increase in the glass stability due to exchange of TeO2 by ZnO especially for 10 and 15% mol Li2O groups. By continuing, the UV-VIS results indicated a gradual increase in the band gap energy which was calculated by Urbach rule; this increased energy as TeO2 was replaced by ZnO, can also be seen as a blue shift. These same results were confirmed by a structural change seen by Raman spectroscopy: with the increased of ZnO, the vibrational modes located at 450 e 659 cm-1 which incorporate trigonal bipyramids of TeO4 are gradually replaced by vibrational modes at 735-760 cm-1 referred the creation of Zn2Te3O8 units. This behavior by Raman spectroscopy is also confirmed by the FTIR results with increased intensity of peaks related to vibrational modes of ZnO molecules. Therefore, it is verified that the addition of ZnO in the system has the property to decrease the amount of NBOs, which in turn decreases the polarizability of the oxide ion of the system and increases the band gap energy. Lastly, the increase in the band gap values and, Raman and DSC results showed that this glassy system acquires considerable glass stability, has good transmittance in the ultraviolet and visible regions, and thus appears as a promising candidate for host ions optically active.
Esta dissertação teve por objetivo estudar os vidros teluretos em um sistema ternário com composição TeO2-Li2O-ZnO, separados em três grupos com concentração fixa de 10%, 15% e 20% em mol de Li2O com a respectiva substituição do conhecido formador de rede TeO2 por ZnO. Tal estudo agregou as técnicas de Calorimetria Diferencial de Varredura (DSC), absorção óptica na região do ultravioleta-visível (UV-VIS), espectroscopia Raman, infravermelho por transformada de Fourier (FTIR), medidas de índice de refração linear (n0) e nanoindentação instrumentada. As amostras foram preparadas pelo método de melt quenching e obtidas na forma de bulk. Por meio dos resultados de DSC verificou-se que a temperatura de transição vítrea (TG) fica praticamente inalterada nesse sistema vítreo, enquanto que existe um aumento expressivo da estabilidade vítrea com a troca de TeO2 por ZnO, principalmente para os grupos com 10 e 15% em mol de Li2O. Já os resultados de UV-VIS mostraram um aumento gradual na energia de band gap, a qual foi calculada utilizando a Regra de Urbach. Esse aumento de energia, à medida que TeO2 era substituído por ZnO, também pode ser visto como um blue shift (deslocamento para o azul). Esse aumento de band gap foi confirmado por uma mudança estrutural vista por espectroscopia Raman: com o aumento na concentração de ZnO, os modos vibracionais localizados em 450 e 659 cm-1 que incorporam bipirâmides trigonais de TeO4 passam a ser gradualmente substituídos por modos vibracionais em 735-760 cm-1 que se referem a criação de unidades Zn2Te3O8. Esse comportamento por espectroscopia Raman também é confirmado através dos resultados de FTIR com aumento da intensidade dos picos relacionados a modos vibracionais de moléculas ZnO. É verificado assim que a adição de ZnO ao sistema tem a propriedade de diminuir a quantidade de NBOs, o que por sua vez, diminui a polarizabilidade do íon óxido do sistema e aumenta a energia de band gap. Com isto, o aumento nos valores de band gap e os resultados de DSC e Raman mostraram que esse sistema vítreo adquire considerável estabilidade vítrea, tem boa transmitância nas regiões do ultravioleta e visível e, assim, se mostra como um promissor candidato para hospedeiro de íons opticamente ativos.
APA, Harvard, Vancouver, ISO, and other styles
9

Rung, Andreas. "Numerical Studies of Energy Gaps in Photonic Crystals." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-5848.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Righini, Matteo. "Misure di trasmittanza ottica di nanoparticelle di Ti(1-x)V(x)O(2)." Bachelor's thesis, Alma Mater Studiorum - Università di Bologna, 2014. http://amslaurea.unibo.it/7698/.

Full text
Abstract:
Negli ultimi tempi sta assumendo grande importanza la ricerca sulla produzione di idrogeno dall’acqua tramite celle foto-elettrolitiche. In questa tesi vengono descritte le analisi condotte su un materiale che può essere coinvolto in questa applicazione: il TiO2 drogato con atomi di V. In particolare è stato valutato l’effetto del drogaggio sull’energy gap tramite misure di trasmittanza ottica effettuate in laboratorio su campioni con diverse concentrazioni di V e trattati termicamente a varie temperature. Nel primo capitolo vengono descritte le caratteristiche dei semiconduttori legate all’ottica, soffermandosi in particolare sul TiO2. Nel secondo capitolo sono illustrati l’apparato e il metodo sperimentale; viene inoltre fornita una descrizione dettagliata dei campioni analizzati. Nel terzo capitolo vengono esposti i risultati delle analisi dei dati.
APA, Harvard, Vancouver, ISO, and other styles
More sources

Books on the topic "Energy band gap"

1

Little, Mark E. Band-gap engineering in sputter deposited amorphous/microcrystalline ScxGa1-xN. Hampton, Va: National Aeronautics and Space Administration, Langley Research Center, 2001.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
2

Ėlektronnyĭ spektr besshchelevykh poluprovodnikov. Sverdlovsk: Akademii͡a nauk SSSR, Uralʹskoe otd-nie, 1991.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
3

T͡Sidilʹkovskiĭ, I. M. Electron spectrum of gapless semiconductors. Berlin: Springer, 1997.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
4

Centre, Bhabha Atomic Research. Rail gap switches & its triggering system for high energy capacitor bank. Mumbai: Bhabha Atomic Research Centre, 2011.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
5

World Bank. Independent Evaluation Group and World Bank, eds. Climate change and the World Bank Group: Phase 1, an evaluation of World Bank win-win energy policy reforms. Washington, D.C: World Bank, 2009.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
6

NATO Advanced Study Institute on the Physics of the Two-Dimensional Electron Gas (1986 Oostduinkerke, Belgium). The physics of the two-dimensional electron gas. New York: Plenum Press, 1987.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
7

Chomitz, Kenneth M. Climate change and the World Bank Group: Phase II, the challenge of low-carbon development. Washington, D.C: World Bank, 2010.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
8

United States. Congress. Senate. Committee on Energy and Natural Resources. Staunton, Rossin, Garrish, and Francis nominations: Hearing before the Committee on Energy and Natural Resources, United States Senate, Ninety-ninth Congress, second session, on the nominations of Marshall A. Staunton ... A. David Rossin ... Department of Energy; Theodore J. Garrish ... Alaska Natural Gas Transportation System; and Richard H. Francis ... Solar Energy and Energy Conservation Bank ... July 15, 1986. Washington: U.S. G.P.O., 1986.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
9

Heterojunction band discontinuities: Physics and device applications. Amsterdam: North-Holland, 1987.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
10

Band-gap engineering in sputter deposited amorphous/microcrystalline ScxGa1-xN. Hampton, Va: National Aeronautics and Space Administration, Langley Research Center, 2001.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Book chapters on the topic "Energy band gap"

1

Weik, Martin H. "band gap energy." In Computer Science and Communications Dictionary, 102. Boston, MA: Springer US, 2000. http://dx.doi.org/10.1007/1-4020-0613-6_1322.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Matsukura, F. "Ga1–xMnxAs: band structure, direct energy gap." In New Data and Updates for III-V, II-VI and I-VII Compounds, 187. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-92140-0_140.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Busch, K., and C. M. Soukoulis. "Energy Transport Velocity in Random Media." In Photonic Band Gap Materials, 667–78. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1665-4_38.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Portela, Raquel. "Non-metal Doping for Band-Gap Engineering." In Green Energy and Technology, 287–309. London: Springer London, 2013. http://dx.doi.org/10.1007/978-1-4471-5061-9_14.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Wang, C. S., and W. E. Pickett. "Energy Band Gap in Quasi-Particle Local Density Theory." In Proceedings of the 17th International Conference on the Physics of Semiconductors, 993–96. New York, NY: Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_222.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Alcubilla, R., L. Prat, and F. Therez. "GaAlAs/gaAs Solar Cells. Bulk Graded Band Gap Structures, an Optimization." In Seventh E.C. Photovoltaic Solar Energy Conference, 895–99. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-3817-5_159.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Bundgaard, Eva, and Frederik Krebs. "Development of Low Band Gap Polymers for Roll-to-Roll Coated Polymer Solar Cell Modules." In Energy Efficiency and Renewable Energy Through Nanotechnology, 251–70. London: Springer London, 2011. http://dx.doi.org/10.1007/978-0-85729-638-2_6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Pathania, Sonika, and Satbir Singh. "Synthesis and Optoelectronic Studies of Low Band Gap Polymers and Their Role in Highly Efficient Solar Cells: An Overview." In Springer Proceedings in Energy, 179–85. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-63085-4_24.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Serpone, Nick, Alexei V. Emeline, Vyacheslav N. Kuznetsov, and Vladimir K. Ryabchuk. "Second Generation Visible-Light-Active Photocatalysts: Preparation, Optical Properties, and Consequences of Dopants on the Band Gap Energy of TiO2." In Nanostructure Science and Technology, 35–111. New York, NY: Springer New York, 2010. http://dx.doi.org/10.1007/978-0-387-48444-0_3.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Meyer, B. K. "ZnO: band structure, energy gaps." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors, 566–69. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_316.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Energy band gap"

1

Kramer, Aaron, Maarten L. Van de Put, Christopher L. Hinkle, and William G. Vandenberghe. "Trigonal Tellurium Nanostructure Formation Energy and Band gap." In 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2019. http://dx.doi.org/10.1109/sispad.2019.8870361.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Soonil Lee, William H. Woodford, and Clive A. Randall. "Band gap energy of perovskite structured ABO3 compounds." In 2008 17th IEEE International Symposium on the Applications of Ferroelectrics (ISAF). IEEE, 2008. http://dx.doi.org/10.1109/isaf.2008.4693923.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Yu, Liuyang, Yong Xu, and Kegao Liu. "Study on Energy Band-gap Calculation of CuGaS2." In 2015 3rd International Conference on Machinery, Materials and Information Technology Applications. Paris, France: Atlantis Press, 2015. http://dx.doi.org/10.2991/icmmita-15.2015.173.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Yan, Yanfa, K. S. Ahn, S. Shet, T. Deutsch, M. Huda, S. H. Wei, J. Turner, and M. M. Al-Jassim. "Band gap reduction of ZnO for photoelectrochemical splitting of water." In Solar Energy + Applications, edited by Jinghua Guo. SPIE, 2007. http://dx.doi.org/10.1117/12.734950.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Salmani, E., A. Marjaoui, O. Mounkachi, M. Ben Ali, H. El Moussaoui, H. Ez-Zahraouy, M. Hamedoun, M. Benaissa, and A. Benyoussef. "Band gap engineering of (InGaN) for photovoltaic application." In 2014 International Renewable and Sustainable Energy Conference (IRSEC). IEEE, 2014. http://dx.doi.org/10.1109/irsec.2014.7059771.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Shillaber, Luke, Li Ran, Yanfeng Shen, and Teng Long. "Gigahertz Current Measurement for Wide Band-gap Devices." In 2020 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2020. http://dx.doi.org/10.1109/ecce44975.2020.9235662.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Witjaksono, Gunawan, and M. Junaid. "Analysis of Tunable Energy Band Gap of Graphene Layer." In 2018 IEEE 7th International Conference on Photonics (ICP). IEEE, 2018. http://dx.doi.org/10.1109/icp.2018.8533209.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Maeda, M., T. Kamimura, S. Iwasaki, and K. Matumoto. "New Measurement Method of Carbon Nanotube Energy Band Gap." In 2007 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2007. http://dx.doi.org/10.7567/ssdm.2007.j-10-1.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Jani, Omkar, Christiana Honsberg, Yong Huang, June-o. Song, Ian Ferguson, Gon Namkoong, Elaissa Trybus, Alan Doolittle, and Sarah Kurtz. "Design, Growth, Fabrication and Characterization of High-Band Gap InGaN/GaN Solar Cells." In 2006 IEEE 4th World Conference on Photovoltaic Energy Conference. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279337.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Malachowski, Michal J. "Quantum yield of energy-band-gap-graded AlGaN(n)/GaN(p) UV photodetector." In Electronic Imaging, edited by Morley M. Blouke, Nitin Sampat, George M. Williams, Jr., and Thomas Yeh. SPIE, 2000. http://dx.doi.org/10.1117/12.385447.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "Energy band gap"

1

Kizilyalli, Isik C., Eric P. Carlson, Daniel W. Cunningham, Joseph S. Manser, Yanzhi Ann Xu, and Alan Y. Liu. Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency. Office of Scientific and Technical Information (OSTI), March 2018. http://dx.doi.org/10.2172/1464211.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Gamboa, E. J., L. B. Fletcher, H. J. Lee, M. J. MacDonald, U. Zastrau, M. Gauthier, D. O. Gericke, et al. Band gap opening in strongly compressed diamond observed by x-ray energy loss spectroscopy. Office of Scientific and Technical Information (OSTI), January 2016. http://dx.doi.org/10.2172/1241296.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Prelas, M. A. A study of potential high band-gap photovoltaic materials for a two step photon intermediate technique in fission energy conversion. Final report. Office of Scientific and Technical Information (OSTI), January 1996. http://dx.doi.org/10.2172/378901.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Prelas, M. A., E. J. Charlson, and E. M. Charlson. Summary year 2: A study of potential high band-gap photovoltaic materials for a two step photon intermediate technique in fission energy conversion. Office of Scientific and Technical Information (OSTI), November 1996. http://dx.doi.org/10.2172/395669.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

A study of potential high band-gap photovoltaic materials for a two step photon intermediate technique in fission energy conversion. Office of Scientific and Technical Information (OSTI), August 1991. http://dx.doi.org/10.2172/6108288.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

A study of potential high band-gap photovoltaic materials for a two step photon intermediate technique in fission energy conversion. Progress report for year one, December 1, 1990--November 30, 1991. Office of Scientific and Technical Information (OSTI), August 1991. http://dx.doi.org/10.2172/10107061.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Inter-American Development Bank Sustainability Report 2020: Global Reporting Initiative Annex. Inter-American Development Bank, March 2021. http://dx.doi.org/10.18235/0003100.

Full text
Abstract:
The Global Reporting Initiative (GRI) sets global standards for sustainability reporting, relying on best practices for reporting on a range of economic, environmental, and social impacts. This is the IDBs fifth GRI annex, prepared as a supplement to the IDB Sustainability Report. The annex reports on both corporate and operational topics using standardized indicators. The following material topics are included in the annex: active ownership, anticorruption and ethics, biodiversity, climate resilience, employment and labor relations, energy, engagement and coordination, feedback mechanisms, financial inclusion, gender equality and diversity, greenhouse gas (GHG) emissions, health and safety, human rights, indirect economic impacts, market presence, material use, monitoring and evaluation, responsible portfolio, supply chain management, training and education, waste, and water.
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'Energy band gap' for particular source types:
Journal articles Dissertations / Theses Books
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography