Academic literature on the topic 'Eoot architecture'

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Journal articles on the topic "Eoot architecture"

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WANG, YANGYUAN, RU HUANG, JINFENG KANG, and SHENGDONG ZHANG. "HIGHLY SCALED CMOS DEVICE TECHNOLOGIES WITH NEW STRUCTURES AND NEW MATERIALS." International Journal of High Speed Electronics and Systems 16, no. 01 (2006): 147–73. http://dx.doi.org/10.1142/s012915640600359x.

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In this paper field effect transistors (FETs) with new materials and new structures are discussed. A thermal robust HfN/HfO 2 gate stack, which can alleviate the confliction between high quality high k material and low EOT, is investigated. EOT of the gate stack can be scaled down to 0.65nm for MOS capacitor and 0.95nm for MOSFET with higher carrier mobility. A new dual metal gate/high k CMOS integration process was demonstrated based on a dummy HfN technique for better high k quality and metal gate integration. Several new double gate FETs are proposed and investigated, including vertical dou
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Zhang, Rui, Wen-Jing Jiang, Shuai Zhao, Li-Juan Kang, Qing-Shan Wang, and Yu-Mei Feng. "Abstract 1312: FOXF2 expression triggered by endocrine therapy orchestrates therapeutic resistance through reorganization of chromatin architecture in breast cancer." Cancer Research 85, no. 8_Supplement_1 (2025): 1312. https://doi.org/10.1158/1538-7445.am2025-1312.

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Estrogen receptor-positive (ER+) breast cancer accounts for 80% breast cancer cases. The estrogen-ERα signaling pathway plays a pivotal role in driving the progression of ER+ breast cancer cells. Thus, endocrine therapy targeting the estrogen-ERα signaling pathway is a predominant treatment for ER+ breast cancer. Most patients with ER+ breast cancer require long-term treatment with endocrine agents. Although endocrine therapy effectively improves the survival of patients with ER+ breast cancer, bone metastasis frequently occurs in patients receiving long-term endocrine therapy due to acquired
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Stanchina, Michele D., Russ Kuker, Sunwoo Han, et al. "Association of Body Composition Factors and Toxicity in Patients with Advanced Stage Hodgkin Lymphoma Receiving BV-AVD." Blood 144, Supplement 1 (2024): 4423. https://doi.org/10.1182/blood-2024-203734.

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Introduction: Brentuximab vedotin (BV) in combination with doxorubicin, vinblastine, and dacarbazine (BV-AVD) has improved progression-free survival (PFS) and overall survival (OS) in advanced stage Hodgkin Lymphoma (ASHL). However, peripheral neuropathy (PN) remains a significant toxicity leading to BV discontinuation and long-term sequelae (Connors, 2018; Ansell, 2022). BV dosing is calculated using actual body weight (up to 100 kg) but does not distinguish between body composition measures such as fat, bone or muscle mass. Previous studies in solid tumors have shown that low skeletal muscle
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Vieira, M. A., M. Vieira, P. Louro, P. Vieira, and A. Fantoni. "Vehicular Visible Light Communication for Intersection Management." Signals 4, no. 2 (2023): 457–77. http://dx.doi.org/10.3390/signals4020024.

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An innovative treatment for congested urban road networks is the split intersection. Here, a congested two-way–two-way traffic light-controlled intersection is transformed into two lighter intersections. By reducing conflict points and improving travel time, it facilitates smoother flow with less driver delay. We propose a visible light communication system based on Vehicle-to-Vehicle (V2V), Vehicle-to-Infrastructure (V2I) and Infrastructure-to-Vehicle (I2V) communications able to safely manage vehicles crossing through an intersection, leveraging Edge of Things (EoT) facilities. Headlights, s
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OKTYABRSKY, S., P. NAGAIAH, V. TOKRANOV, et al. "ELECTRON SCATTERING IN BURIED InGaAs/HIGH-K MOS CHANNELS." International Journal of High Speed Electronics and Systems 20, no. 01 (2011): 95–103. http://dx.doi.org/10.1142/s012915641100643x.

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Hall electron mobility in buried QW InGaAs channels, grown on InP substrates with HfO 2 gate oxide, is analyzed experimentally and theoretically as a function of top barrier thickness and composition, carrier density, and temperature. Temperature slope α in μ ~Tα dependence is changing from α=-1.1 to +1 with the reduction of the top barrier thickness indicating the dominant role of remote Coulomb scattering (RCS) in interface-related contribution to mobility degradation. Insertion of low-k SiO x interface layer formed by oxidation of thin in-situ MBE grown amorphous Si passivation layer has be
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Grinshpun, Albert, Junko Tsuji, Tianyu Li, et al. "Longitudinal circulating tumor DNA (ctDNA) whole-exome sequencing (WES) in the phase Ib/II trial of palbociclib and bazedoxifene reveals genomic dynamics and clonal evolution with the acquisition of treatment resistance in hormone receptor-positive, HER2-negative (HR+ HER2-), advanced breast cancer (ABC)." Journal of Clinical Oncology 40, no. 16_suppl (2022): 1058. http://dx.doi.org/10.1200/jco.2022.40.16_suppl.1058.

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1058 Background: Patients (pts) with HR+ HER2- ABC ultimately develop endocrine resistance. To gain insights into the genetic mechanisms of resistance we performed WES on serial plasma samples from endocrine resistant pts treated on a clinical trial (NCT02448771). Methods: Plasma samples were collected at baseline (n=36), day 1 of cycle 2 (n=33), and at the end of treatment (EOT, n=33). Samples were subjected to ultra-low passage (ULP, 0.19-0.57X) WGS to determine ctDNA tumor fraction (TF) for the selection of samples (TF>0.03) for subsequent WES (193X). Somatic single nucleotide variations
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Mah, Siew Kien, Pin Jern Ker, Ibrahim Ahmad, Noor Faizah Zainul Abidin, and Mansur Mohammed Ali Gamel. "A Feasible Alternative to FDSOI and FinFET: Optimization of W/La2O3/Si Planar PMOS with 14 nm Gate-Length." Materials 14, no. 19 (2021): 5721. http://dx.doi.org/10.3390/ma14195721.

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At the 90-nm node, the rate of transistor miniaturization slows down due to challenges in overcoming the increased leakage current (Ioff). The invention of high-k/metal gate technology at the 45-nm technology node was an enormous step forward in extending Moore’s Law. The need to satisfy performance requirements and to overcome the limitations of planar bulk transistor to scales below 22 nm led to the development of fully depleted silicon-on-insulator (FDSOI) and fin field-effect transistor (FinFET) technologies. The 28-nm wafer planar process is the most cost-effective, and scaling towards th
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Sanchis, Pablo, Agustina Sabater, Juan Bizzotto, et al. "Abstract 3123: Fracturing the tumor-bone alliance in metastatic prostate cancer with Ra-223." Cancer Research 85, no. 8_Supplement_1 (2025): 3123. https://doi.org/10.1158/1538-7445.am2025-3123.

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Abstract Radium-223 dichloride (Ra-223) is a calcium-mimetic alpha-emitting radiopharmaceutical homing to bone, approved for the treatment of bone metastases in castration-resistant prostate cancer (CRPC), significantly prolonging overall survival in patients with advanced disease. This study integrates preclinical and clinical studies to investigate the effects of Ra-223 on tumor volume, bone structure, transcriptomics alterations, and to identify biomarkers of therapeutic response to Ra-223. Using patient-derived xenografts (MDA PCa PDX), which mimic the hallmark characteristics of clinical
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Patoary, Naim Hossain, Fahad Al Mamun, Jing Xie, Tibor Grasser, and Ivan Sanchez Esqueda. "Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS2 FETs." Advanced Electronic Materials, June 21, 2024. http://dx.doi.org/10.1002/aelm.202400152.

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Abstract2D layered semiconductors have attracted considerable attention for beyond‐Si complementary metal‐oxide‐semiconductor (CMOS) technologies. They can be prepared into ultrathin channel materials toward ultrascaled device architectures, including double‐gate field‐effect‐transistors (DGFETs). This work presents an experimental analysis of DGFETs constructed from chemical vapor deposition (CVD)‐grown monolayer (1L) molybdenum disulfide (MoS2) with atomic layer deposition (ALD) of hafnium oxide (HfO2) high‐k gate dielectrics (top and bottom). This extends beyond previous studies of DGFETs b
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"Reducing Handover Latency of PMIPv6 using Extended Open-Flow Technique." International Journal of Engineering and Advanced Technology 8, no. 6S3 (2019): 1918–21. http://dx.doi.org/10.35940/ijeat.f1368.0986s319.

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This proposed technique adapts PMIPv6 to the Extended Open-Flow architecture, and this technique is referred to as the Extended Open-Flow Technique of PMIPv6 (EOFT-PMIPv6). This method isolates the versatility capacities from the PMIPv6 segments, for example, the Local Mobility Anchor (LMA) and Mobile Access Gateway (MAG), and recreates the parts to take points of interest of the Open-Flow design. The parts that contain the LMA work set the stream table of the switches situated in the way as the controller of Open-Flow, and as such, the area of the MN is kept up. The entrance switches with the
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Dissertations / Theses on the topic "Eoot architecture"

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Madani, Ikram. "Plasticité du système racinaire du blé en condition de carence en N, P ou K révélée par développement d'une méthodologie de phénotypage intégrant les poils absorbants." Electronic Thesis or Diss., Université de Montpellier (2022-....), 2022. http://www.theses.fr/2022UMONG059.

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Une faible disponibilité des macroéléments dans la plupart des sols cultivés limite fortement les rendements des cultures en absence de fertilisation. Une meilleure compréhension de l’adaptation des systèmes racinaires à des sols pauvres en ions nutritifs, et l’exploitation de la diversité génétique existante dans ce domaine, entre espèces et/ou variétés, sont susceptibles de contribuer au développement de nouveaux cultivars et de nouvelles pratiques agronomiques permettant de limiter les intrants de fertilisation chimique coûteux et polluants pour l’environnement. L'architecture du système ra
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Conference papers on the topic "Eoot architecture"

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Orellana Postigo, Miguel Angel, Javier Martinez, and José Reinaldo Silva. "Microgrid System Design Based On Model Based Systems Engineering And Goal-Oriented Requirements Engineering." In Congresso Brasileiro de Automática - 2020. sbabra, 2020. http://dx.doi.org/10.48011/asba.v2i1.1146.

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Microgrids appear as a practical, clean and reliable solution to meet the demand of populations that, for various reasons, do not have access to electricity. The complexity of microgrid systems, requires considerable engineering eort in the design process. To design this type of complex systems, new approaches, methods, concepts and engineering tools are needed. Where, the requirements analysis has a preponderant role to better characterize, understand and specify the application domain and the problem that the microgrids must solve. This work proposes the introduction of a formal analysis of
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Kawanago, T., K. Kakushima, P. Ahmet, et al. "(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture." In ESSDERC 2012 - 42nd European Solid State Device Research Conference. IEEE, 2012. http://dx.doi.org/10.1109/essderc.2012.6343340.

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