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Relevant bibliographies by topics / Epitafi - Sec. 20

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Academic literature on the topic 'Epitafi - Sec. 20'

Author: Grafiati

Published: 27 July 2024

Last updated: 31 July 2025

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Journal articles on the topic "Epitafi - Sec. 20"

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Rawat, Mukesh, Archana Lall, and Kavita Sachdeva. "Nasomaxillary swellings: our experience at tertiary care hospital." International Journal of Otorhinolaryngology and Head and Neck Surgery 7, no. 3 (2021): 469. http://dx.doi.org/10.18203/issn.2454-5929.ijohns20210680.

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<p class="abstract"><strong>Background: </strong>A wide spectrum of lesions may present as nasomaxillary swellings ranges from benign to malignant lesions including fungal sinusitis and fibro vascular lesions example: JNA (Juvenile nasopharyngeal angiofibroma) and Inverted papilloma. Many Pathologies ranging from benign to malignant tumors may mimic a simple Nasomaxillary mass. It is diagnostic challenge to determine pathology behind it. A detailed clinical evaluation with nasal endoscopy and relevant pre-operative investigations including radiological imaging and histopathol

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Zheng, Ziye, Shun Kimura, Yuki Azuma, Katsuhiro Tomioka, and Junichi Motohisa. "Fabrication of Vertical Light-Emitting Diodes Using Wurtzite InP/Alinp Core-Multishell Nanowires Towards Yellow Wavelength." ECS Meeting Abstracts MA2024-02, no. 51 (2024): 3577. https://doi.org/10.1149/ma2024-02513577mtgabs.

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Light emitting-diodes (LEDs) using nanostructures has been attracted much attention in the field of next generation solid-state lighting technologies. At present, conventional LEDs are fabricated mainly using nitride-related materials in blue-green region and arsenide/phosphide-related materials in red region. However, both of those materials have issue in significant luminous efficiency drop in yellow wavelength region due to low crystal quality or indirect bandgap. Hence, developing of new candidate materials with high luminous efficiency in yellow region is urgent issue for high color rende

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Mccann, Patrick J. "The Effect of Composition Dependent Lattice Strain on the Chemical Potential of Tellurium in Pb1−xSnxSe1−yTey Quaternary Alloys." MRS Proceedings 311 (1993). http://dx.doi.org/10.1557/proc-311-149.

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ABSTRACTIV-VI semiconductor Pb1−xsSnxsSe1−ysTeys quaternary alloys were grown on (111) BaF2 by liquid phase epitaxy (LPE). X-ray diffraction analysis shows that liquid (Pb1−x1Snx1)0.99(Se1−y1Tey1)0.01 solutions produce alloys lattice-matched with the substrate wheny1 = 60%, 58%, and 57%, and x1 = 20%, 40%, and 60%, respectively. These data suggest that the chemical potential of tellurium in the Pb1−xsSnxsSe1−ysTeys solid solution decreases as tin and tellurium concentrations increase. It is argued that this reduction is due to decreasing strain energy driven segregation of tellurium from the s

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Liliental-Weber, Zuzanna, S. Ruvimov, CH Kisielowski, et al. "Structural Defects in Heteroepitaxial and Homoepitaxial GaN." MRS Proceedings 395 (1995). http://dx.doi.org/10.1557/proc-395-351.

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ABSTRACTThe microstructure and characteristic defects of heteroepitaxial GaN films grown on sapphire using molecular beam epitaxy (MBE) and metal-organic-chemical-vapor-deposition (MOCVD) methods and of homoepitaxial GaN grown on bulk substrates are described based on transmission electron microscopy (TEM), x-ray diffraction, and cathodoluminescence (CL) studies. The difference in arrangement of dislocations along grain boundaries and die influence of buffer layers on the quality of epitaxial films is described. The structural quality of GaN epilayers is compared to diat of bulk GaN crystals g

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Motoki, Keisuke, Zachary Engel, Timothy M. McCrone, et al. "Improved crystallographic order of ScAlN/GaN heterostructures grown at low temperatures under metal rich surface conditions." Journal of Applied Physics 135, no. 13 (2024). http://dx.doi.org/10.1063/5.0176344.

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Sc0.18Al0.82N/GaN with state-of-the-art x-ray diffraction figures of merit grown by metal modulated epitaxy under metal-rich conditions and a low substrate temperature of 400 °C is demonstrated to have improved crystalline order [250 arc sec for the (0002) reflection and 469 arc sec for the (101¯5)] compared to a previous state-of-the-art sample grown at a more conventional temperature of 650 °C. While both samples show a columnar structure, the higher substrate temperature sample has a good symmetric rocking curve (RC) of 229 arc sec, but unlike the lower temperature sample, the RC of the (10

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Love, D., D. Endisch, T. W. Simpson, T. D. Lowes, I. V. Mitchell, and J. M. Baribeau. "Influence of Hydrogen On The Solid Phase Epitaxial Regrowth of Strained Layer Silicon Germanium Alloys." MRS Proceedings 379 (1995). http://dx.doi.org/10.1557/proc-379-461.

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ABSTRACTStrained layer Si/Si0.79Ge0.21 superlattices consisting of 16 alternating 19.0 nm Si0.79Ge0.21 / 18.5 nm Si layers have been amorphized by Si ion irradiation, then implanted with H ions to nominal atomic concentrations of 1%, 0.1% and 0.05% within the amorphized region. Subsequent solid phase epitaxy (SPE) at a regrowth temperature of 575°C was monitored in situ by time resolved reflectivity (TRR) measurements, while changes in the H distribution were measured by elastic recoil detection analysis (ERDA). Analysis was supplemented by Rutherford backscattering spectrometry (RBS), x-ray d

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Books on the topic "Epitafi - Sec. 20"

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Obituaries: 37 epitaffi di storici dell'arte nel Novecento. Electa, 2008.

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Book chapters on the topic "Epitafi - Sec. 20"

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Carroll, Maureen. "Conveying a Message." In Spirits of the Dead. Oxford University PressOxford, 2006. http://dx.doi.org/10.1093/oso/9780199291076.003.0005.

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Abstract From the reign of Augustus occasionally, and from middle of the first century ad much more commonly, the epitaph is prefaced by an invocation ‘to the spirits of the dead’ (the Manes), written as Dis Manibus, and later abbreviated to D M.1 In Gaul and Germany, the introductory D M was expanded from the mid-second century to read ‘D M et Memoriae’ (to the spirits of the dead and the memory of ... ), and from the beginning of the third century the ‘eternal memory’ (memoriae aeternae) or the ‘eternal rest’ (quieti aeternae) of the deceased become common invocations (see Appendix, Nos. 2–5

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