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Relevant bibliographies by topics / Epitaxi

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Academic literature on the topic 'Epitaxi'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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Journal articles on the topic "Epitaxi"

1

Qian, X. J., S. E. Rickert, and J. B. Lando. "Epitaxial crystallization of polyphenylene sulfide: Lattice effects on structures." Journal of Materials Research 4, no. 4 (1989): 1005–17. http://dx.doi.org/10.1557/jmr.1989.1005.

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The investigation of dilute solution epitaxy of polyphenylene sulfide (PPS) has been carried out on a series of inorganic substrates, which cover a wide range of interatomic spacings, surface energies, and geometries. A variety of morphological arrangements of PPS on various substrates were observed. Both 〈100〉 and 〈110〉 epitaxial orientations were observed on monovalent alkali halides. While the 〈100〉 epitaxy is generally thought to grow upon nucleation on surface steps along the 〈100〉 direction, 〈110〉 epitaxy may also be nucleated on these surface steps. Changes in ionic lattice dimensions a

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Wang, Yin Hai, Jian Jun Zhao, Hong Luo, and Lin Bao Ma. "Process Control of Buried Layer Epitaxy by Barrel Type Furnace." Materials Science Forum 815 (March 2015): 3–7. http://dx.doi.org/10.4028/www.scientific.net/msf.815.3.

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Though the quality of epitaxial wafer prepared by barrel type epitaxial furnace is inferior to that by traditional single wafer furnace, it has a series of advantages such as high yield and low cost. The key issues and difficulties of the epitaxy process for buried layers IC wafers prepared by barrel type epitaxial furnace were discussed. By optimizing the epitaxy process parameters and tightly controlling the production procedure such as cleaning and inspecting, barrel type epitaxial furnace can meet the special requirement for buried layer epitaxial process. The characteristics of the epilay

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Zivasatienraj, Bill, M. Brooks Tellekamp, and W. Alan Doolittle. "Epitaxy of LiNbO3: Historical Challenges and Recent Success." Crystals 11, no. 4 (2021): 397. http://dx.doi.org/10.3390/cryst11040397.

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High-quality epitaxial growth of thin film lithium niobate (LiNbO3) is highly desirable for optical and acoustic device applications. Despite decades of research, current state-of-the-art epitaxial techniques are limited by either the material quality or growth rates needed for practical devices. In this paper, we provide a short summary of the primary challenges of lithium niobate epitaxy followed by a brief historical review of lithium niobate epitaxy for prevalent epitaxial techniques. Available figures of merit for crystalline quality and optical transmission losses are given for each grow

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Hiramatsu, Hidenori, Kazushige Ueda, Kouhei Takafuji, et al. "Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La–Nd; Ch = S–Te) by reactive solid-phase epitaxy." Journal of Materials Research 19, no. 7 (2004): 2137–43. http://dx.doi.org/10.1557/jmr.2004.0273.

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Processes and preparation conditions for growing epitaxial thin films of Cu-based, layered oxychalcogenides LnCuOCh (Ln = La, Ce, Pr or Nd; Ch = S1-xSex or Se1-yTey) are reported. Epitaxial thin films on MgO (001) substrates were prepared by a reactive solid-phase epitaxy method. Four-axes high-resolution x-ray diffraction measurements revealed that the crystallographic orientation is (001)[110] LnCuOCh || (001)[110] MgO and the internal stress of the crystalline lattices in the films are relaxed during thermal-annealing process of the reactive solid-phase epitaxy. Furthermore, except for CeCu

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Лундин, В. В., A. Ф. Цацульников, С. Н. Родин та ін. "Селективный эпитаксиальный рост III-N-структур с использованием ионной нанолитографии". Физика и техника полупроводников 52, № 10 (2018): 1237. http://dx.doi.org/10.21883/ftp.2018.10.46467.8861.

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AbstractThe selective epitaxial growth of GaN by metalorganic vapor-phase epitaxy combined with ion-beam etching is investigated. To this end, partially masked GaN epitaxial layers are fabricated by depositing a thin Si_3N_4 layer onto the surface in a single technological process with the growth of GaN and the subsequent opening of windows of different shapes in this layer by an ion beam. Selective epitaxial growth regimes are studied. It is shown that, in a situation where the total area of the windows in the mask is small relative to the total area of the sample, the required epitaxy durati

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Oh, Yong Jun, Jung Seok Ra, and Ui Gil Lee. "Effects of Deposition Parameters on the Crystallinities of CeO₂ and Y₂O₃ Buffer Layers on Textured Ni Deposited by Magnetron Sputtering." Solid State Phenomena 124-126 (June 2007): 779–82. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.779.

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The epitaxial growth conditions of CeO2 and Y2O3 single buffer layers on textured Ni tapes were examined using rf magnetron sputtering, and the process conditions for the sequential and mixture buffer layers of these two materials were investigated respectively in order to develop a more simplified buffer architecture. The CeO2 single layer exhibited a well developed (200) epitaxial growth at Ar/10%O2 gas below 450°C, although the epitaxial property was decreased with increasing layer thickness. With regard to the deposition of Y2O3 on Ni, the epitaxial growth was not successful. The epitaxy o

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Stahlbush, Robert E., Rachael L. Myers-Ward, Brenda L. VanMil, D. Kurt Gaskill, and Charles R. Eddy. "A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy." Materials Science Forum 645-648 (April 2010): 271–76. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.271.

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The recently developed technique of UVPL imaging has been used to track the path of basal plane dislocations (BPDs) in SiC epitaxial layers. The glide of BPDs during epitaxial growth has been observed and the role of this glide in forming half-loop arrays has been examined. The ability to track the path of BPDs through the epitaxy has made it possible to develop a BPD reduction process for epitaxy grown on 8° offcut wafers, which uses an in situ growth interrupt and has achieved a BPD reduction of > 98%. The images also provide insight into the strong BPD reduction that typically occurs in

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Qian, X. J., S. E. Rickert, and J. B. Lando. "Epitaxial crystallization of polyphenylene sulfide on sodium chloride." Journal of Materials Research 4, no. 4 (1989): 996–1004. http://dx.doi.org/10.1557/jmr.1989.0996.

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Epitaxial crystallization of polyphenylene sulfide (PPS) from 1-chloronaphthalene solution on NaCl (001) surface has been studied using electron microscopy and electron diffraction techniques. Three different epitaxial morphologies were observed: (1) conventional rodlike structures (fold plane epitaxy); (2) platelet structures (fold surface epitaxy); and (3) roselike structures whose growth mechanism and molecular packing are not completely understood at present. Of primary importance is the fact that a possible new crystal structure β-phase) of PPS was formed in the fold surface epitaxy throu

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Linthicum, K. J., T. Gehrke, D. B. Thomson, et al. "Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 477–83. http://dx.doi.org/10.1557/s1092578300002921.

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GaN films have been grown on 6H-SiC substrates employing a new form of selective lateral epitaxy, namely pendeo-epitaxy. This technique forces regrowth to start exclusively on sidewalls of GaN seed structures. Both discrete pendeo-epitaxial microstructures and coalesced single crystal layers of GaN have been achieved. SEM and TEM analysis are used to evaluate the morphology of the resulting GaN films. Process routes leading to GaN pendeo-epitaxial growth using silicon substrates have also been achieved and the preliminary results are discussed.

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Radhakrishnan, Rahul, Tony Witt, Seungchul Lee, and Richard Woodin. "Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters." Materials Science Forum 858 (May 2016): 177–80. http://dx.doi.org/10.4028/www.scientific.net/msf.858.177.

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Optimized design of Silicon Carbide (SiC) power devices depends, besides power device physics, also on consideration of basic properties and technological readiness of the material. This paper presents a novel analysis of the dependence of variation of epitaxial doping and thickness on the determination of the optimum design point of SiC devices. We introduce electric field at epitaxy-substrate interface as a useful parameter in controlling the dependence of device parameters on epitaxy. Using this method as criterion for design can improve the robustness of SiC devices to epitaxial variation

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Dissertations / Theses on the topic "Epitaxi"

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Finzel, Annemarie. "Ionenstrahlgestützte Molekularstrahlepitaxie von Galliumnitrid-Schichten auf Silizium." Doctoral thesis, Universitätsbibliothek Leipzig, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-206394.

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Die vorliegende Arbeit befasst sich mit dem Einfluss einer hyperthermischen Stickstoffionenbestrahlung (Ekin < 25 eV) auf das Galliumnitrid-Schichtwachstum. Dabei wird insbesondere der Einfluss einer Oberflächenrekonstruktion, einer Strukturierung der Oberfläche, einer Zwischenschicht (Pufferschicht) und der Einfluss verschiedener Siliziumsubstratorientierungen auf das epitaktische Wachstum von dünnen Galliumnitrid-Schichten nach einer hyperthermischen Stickstoffionenbestrahlung diskutiert. Ziel war es, möglichst dünne, epitaktische und defektarme Galliumnitrid-Schichten zu erhalten. Für die C

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Tengdelius, Lina. "Growth and Characterization of ZrB2 Thin Films." Licentiate thesis, Linköpings universitet, Tunnfilmsfysik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-98308.

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In this thesis, growth of ZrB2 thin films by direct current magnetron sputtering is investigatedusing a high vacuum industrial scale deposition system and an ultra-high vacuum laboratory scalesystem. The films were grown from ZrB2 compound targets at temperatures ranging from ambient (without external heating) to 900 °C and with substrate biases from -20 to -120 V. Short deposition times of typically 100 or 300 s and high growth rates of 80-180 nm/min were emphasized to yield films with thicknesses of 300-400 nm. The films were characterized by thinfilm X-ray diffraction with the techniques θ/

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Ścigaj, Mateusz. "Functional oxide films and interfaces: ferroelectric BaTiO3 films on Si(001) and conducting (110) and (111) LaAlO3/SrTiO3 interfaces." Doctoral thesis, Universitat Autònoma de Barcelona, 2016. http://hdl.handle.net/10803/400603.

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La tesis aborda la integración monolítica de óxidos funcionales sobre silicio y la exploración de intercaras entre SrTiO3(110), SrTiO3(111) y otros óxidos En primer lugar la tesis detalla la integración monolítica del BaTiO3 en silicio, la plataforma actual en microelectrónica. Para ello se ha usado la heteroestructura LaNiO3/CeO2/YSZ como capa de barrera química y acomodación estructural. Se han investigado las propiedades estructurales y funcionales. Las capas son epitaxiales y orientadas con el eje c perpendicular al substrato, y presentan rugosidad superficial muy baja y alta polarización

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Zhang, Yun. "High Quality ZnO Epitaxial Grown By Plasma Assisted Molecular Beam Epitaxy." VCU Scholars Compass, 2004. http://scholarscompass.vcu.edu/etd/883.

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Described in this thesis are the growth and characterization of high quality ZnO epitaxy layers.Zinc oxide (ZnO) epitaxy layers were grown on sapphire and epi-GaN substrates respectively, using plasma assisted molecular beam epitaxy (MBE) . Various growth conditions, such as growth temperature, II/VI ratio, and buffer layers, were employed to optimize the quality of the ZnO film. The subsequent characterization of the films was carried out to evaluate the surface, optical and crystalline properties of the film, using AFM, SEM, PL and XRD techniques. It was found out that the high quality of th

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Schiaber, Ziani de Souza. "Nanoestruturas de GaN crescidas pelas técnicas de epitaxia por magnetron sputtering e epitaxia por feixe molecular." Universidade Estadual Paulista (UNESP), 2016. http://hdl.handle.net/11449/138237.

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Submitted by Ziani DE SOUZA SCHIABER (zianisouza@yahoo.com.br) on 2016-05-02T20:43:07Z No. of bitstreams: 1 Tese_Final_Ziani_Schiaber.pdf: 4224142 bytes, checksum: 63114f480403729da0d811c82872c3cc (MD5)<br>Approved for entry into archive by Felipe Augusto Arakaki (arakaki@reitoria.unesp.br) on 2016-05-04T19:24:06Z (GMT) No. of bitstreams: 1 schiaber_zs_dr_bauru.pdf: 4224142 bytes, checksum: 63114f480403729da0d811c82872c3cc (MD5)<br>Made available in DSpace on 2016-05-04T19:24:06Z (GMT). No. of bitstreams: 1 schiaber_zs_dr_bauru.pdf: 4224142 bytes, checksum: 63114f480403729da0d811c82872c3cc

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Gomes, Joaquim Pinto. "Projeto e construção de um sistema de crescimento epitaxial por feixe molecular." Universidade Federal de Viçosa, 2009. http://locus.ufv.br/handle/123456789/4236.

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Made available in DSpace on 2015-03-26T13:35:11Z (GMT). No. of bitstreams: 1 texto completo.pdf: 2893346 bytes, checksum: 9ae656930afe35b3a72cddee0c2cc87c (MD5) Previous issue date: 2009-05-29<br>Coordenação de Aperfeiçoamento de Pessoal de Nível Superior<br>The epitaxial growth technique by molecular beams (Molecular Beam Epitaxy – MBE) can be considered as one of the most important for obtaining thin fine films, heterostructures and nanostructures nowadays, allowing the production of high quality layers, and it also allows the in situ monitoring of process through several techniques

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Sugiura, Kenji, Hiromichi Ohta, Shin-ichi Nakagawa, et al. "Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy." American Institite of Physics, 2009. http://hdl.handle.net/2237/12628.

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Benz, Rudolph G. II. "Surface growth kinetics in molecular beam epitxay and gas source molecular beam epitaxy of CdTe." Diss., Georgia Institute of Technology, 1992. http://hdl.handle.net/1853/30421.

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Srinivasan, Lakshman. "Properties of epitaxial lateral overgrowth of GaAsP and GaAs grown by hydride vapor phase epitaxy." Thesis, KTH, Tillämpad fysik, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-284691.

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Direct heteroepitaxy of III-Vs on silicon (Si) has always been a challenge and there are various strategies to integrate these materials. This thesis deals with one such strategy known as Epitaxial lateral overgrowth (ELOG) which is extensively supported by experiments. For an application such as a multijunction solar cell, with silicon as a bottom cell, the highest efficiency can be achieved with a top cell having a bandgap of 1.7 eV and hence GaAsP as a material suits the profile. The ELOG GaAsP and GaAs samples were grown using the epitaxial growth technique known as hydride vapor phase epi

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Bettini, Jefferson. "Crescimento epitaxial de InxGa1-xP sobre GaAs pela técnica de epitaxia por feixe químico (CBE)." [s.n.], 1997. http://repositorio.unicamp.br/jspui/handle/REPOSIP/278441.

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Orientador: Mauro Monteiro Garcia de Carvalho<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin<br>Made available in DSpace on 2018-07-22T12:06:53Z (GMT). No. of bitstreams: 1 Bettini_Jefferson_M.pdf: 2628507 bytes, checksum: 74c8119be7842fd41194505b853e5030 (MD5) Previous issue date: 1997<br>Resumo: Apresentamos neste trabalho um estudo do crescimento epitaxial de InXGal-XP sobre GaAs que tem por objetivo a obtenção do ln0,49Ga0,51P. Em nosso trabalho, medimos a composição do InXGal-XP e a taxa de crescimento em função do fluxo de TMIn + H2

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Books on the topic "Epitaxi"

1

Aspects of epitaxy. Pergamon, 1986.

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International, Conference on Vapour Growth and Epitaxy (8th 1994 Freiburg Germany). Vapour growth and epitaxy 1994: Proceedings of the Eighth International Conference on Vapour Growth and Epitaxy, Freiburg, Germany, 24-29 July 1994. North-Holland, 1995.

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Herman, Marian A., Wolfgang Richter, and Helmut Sitter. Epitaxy. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-07064-2.

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Ilić, Krstivoje. Kraljevski epitafi. Srpska književna zadruga, 2010.

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Ilić, Krstivoje. Kraljevski epitafi. Srpska književna zadruga, 2010.

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N, Ledentsov Nikolai, and Bimberg Dieter, eds. Epitaxy of nanostructures. Springer, 2004.

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Shchukin, Vitaly A. Epitaxy of Nanostructures. Springer Berlin Heidelberg, 2004.

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Herman, Marian A., and Helmut Sitter. Molecular Beam Epitaxy. Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-642-80060-3.

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Shchukin, Vitaly A., Nikolai N. Ledentsov, and Dieter Bimberg. Epitaxy of Nanostructures. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-07066-6.

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Pohl, Udo W. Epitaxy of Semiconductors. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-43869-2.

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Book chapters on the topic "Epitaxi"

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Herman, Marian A., Wolfgang Richter, and Helmut Sitter. "Introduction." In Epitaxy. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-07064-2_1.

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Herman, Marian A., Wolfgang Richter, and Helmut Sitter. "In-situ Surface Analysis." In Epitaxy. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-07064-2_10.

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Herman, Marian A., Wolfgang Richter, and Helmut Sitter. "Thermodynamic Aspects." In Epitaxy. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-07064-2_11.

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Herman, Marian A., Wolfgang Richter, and Helmut Sitter. "Atomistic Aspects." In Epitaxy. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-07064-2_12.

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Herman, Marian A., Wolfgang Richter, and Helmut Sitter. "Quantum Mechanical Aspects." In Epitaxy. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-07064-2_13.

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Herman, Marian A., Wolfgang Richter, and Helmut Sitter. "Heteroepitaxy; Growth Phenomena." In Epitaxy. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-07064-2_14.

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Herman, Marian A., Wolfgang Richter, and Helmut Sitter. "Material-Related Problems of Heteroepitaxy." In Epitaxy. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-07064-2_15.

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Herman, Marian A., Wolfgang Richter, and Helmut Sitter. "Closing Remarks." In Epitaxy. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-07064-2_16.

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Herman, Marian A., Wolfgang Richter, and Helmut Sitter. "Homo- and Heteroepitaxial Crystallization Phenomena." In Epitaxy. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-07064-2_2.

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Herman, Marian A., Wolfgang Richter, and Helmut Sitter. "Application Areas of Epitaxially Grown Layer Structures." In Epitaxy. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-07064-2_3.

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Conference papers on the topic "Epitaxi"

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Muradoglu, Metin, and Savas Tasoglu. "Impact and Spreading of a Microdroplet on a Solid Wall." In ASME 2009 7th International Conference on Nanochannels, Microchannels, and Minichannels. ASMEDC, 2009. http://dx.doi.org/10.1115/icnmm2009-82172.

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Impact and spreading of a viscous micro droplet on dry solid surfaces are studied computationally using a finite-difference/front-tracking method. The problem is motivated by single cell epitaxy developed for printing biological cells on a solid substrate using ink-jet printer technology. In this study, we consider impact and spreading of a simple droplet on a partially wetting substrate as a first step in developing a complete compound droplet model for the single cell epitaxi. The numerical method is general and can treat non-wetting, partially wetting and fully wetting cases but the focus h

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Khan, T. E. Ayoob, V. Arya, and T. A. Shahul Hameed. "Spacer and material engineered performance enhancement of FinFET with polygonal epitaxi." In PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON MICROELECTRONICS, SIGNALS AND SYSTEMS 2019. AIP Publishing, 2020. http://dx.doi.org/10.1063/5.0004007.

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Kleinschmit, Mark W., Mark Yeadon, and J. M. Gibson. "Epitaxial CoSi 2 on Si(100) by oxide-mediated epitaxy." In International Symposium on Microelectronics and Assembly, edited by H. Barry Harrison, Andrew T. S. Wee, and Subhash Gupta. SPIE, 2000. http://dx.doi.org/10.1117/12.405377.

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Arkun, F. E., S. Semans, G. Vosters, R. S. Smith, and A. Clark. "Growth of epitaxial silicon-on-insulator substrates by solid state epitaxy." In 2010 IEEE International SOI Conference. IEEE, 2010. http://dx.doi.org/10.1109/soi.2010.5641379.

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Cariou, Romain, Jean-Luc Maurice, Jean Decobert, and Pere Roca i Cabarrocas. "Direct epitaxial growth of silicon on GaAs by low temperature epitaxy." In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925508.

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Rawat, Vijay, Robert Wortman, and Tim Sands. "Nitride Metal/Semiconductor Superlattices for High Temperature Direct Thermal-to-Electrical Energy Conversion." In ASME 2007 2nd Energy Nanotechnology International Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/enic2007-45042.

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We have identified TiN/GaN and ZrN/ScN as two possible pure rocksalt structured metal/semiconductor combinations for fabrication of solid-state thermionic energy converters for high operational temperatures. The selection of the materials was constrained by issues that are critical to the integration of heterogeneous materials such as crystallographic compatibility and thermodynamic stability of the metal/semiconductor combinations at high operating temperatures. The first nitride superlattice system consists of TiN as the metal layer and GaN, in its metastable rocksalt phase, as the semicondu

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Wang, S. K., B. Xue, H. Liang, et al. "Growth of Epitaxial Beryllium Oxide on Ge (111) by Molecular Beam Epitaxy." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.ps-1-4.

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Tyagi, Prashant, Ramesh Ch., S. S. Kushvaha, and M. Senthil Kumar. "Low temperature laser molecular beam epitaxy and characterization of AlGaN epitaxial layers." In DAE SOLID STATE PHYSICS SYMPOSIUM 2016. Author(s), 2017. http://dx.doi.org/10.1063/1.4980530.

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de Lyon, Terence J., B. Baumgratz, G. R. Chapman та ін. "Epitaxial growth of HgCdTe 1.55-μm avalanche photodiodes by molecular beam epitaxy". У Optoelectronics '99 - Integrated Optoelectronic Devices, редактори Gail J. Brown та Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344562.

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Fernandez-Garrido, Sergio, Pierre Corfdir, Manfred Ramsteiner, et al. "Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene." In Gallium Nitride Materials and Devices XIII, edited by Jen-Inn Chyi, Hadis Morkoç, and Hiroshi Fujioka. SPIE, 2018. http://dx.doi.org/10.1117/12.2288233.

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Reports on the topic "Epitaxi"

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Dr. Darrell G. Schlom. The Controlled Synthesis of Metastable Oxides Utilizing Epitaxy and Epitaxial Stabilization. Office of Scientific and Technical Information (OSTI), 2009. http://dx.doi.org/10.2172/966692.

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Schlom, Darrell. The Controller Synthesis of Metastable Oxides Utilizing Epitaxy and Epitaxial Stabilization. Office of Scientific and Technical Information (OSTI), 2003. http://dx.doi.org/10.2172/819922.

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Taga, N., M. Maekawa, Y. Shigesato, I. Yasui, and T. E. Haynes. Deposition of hetero-epitaxial In{sub 2}O{sub 3} thin films by molecular beam epitaxy. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/257414.

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C.A. Wang, D.A. Shiau, P.G. Murphy, et al. Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices. Office of Scientific and Technical Information (OSTI), 2003. http://dx.doi.org/10.2172/821870.

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Hawkridge, Michael E., Z. Liliental-Weber, Hee J. Kim, et al. The Structural Quality of AlxGa1-xN Epitaxial Layers Grown by Digitally-Alloyed Modulated Precursor Epitaxy Determined by Transmission Electron Microscopy. Defense Technical Information Center, 2009. http://dx.doi.org/10.21236/ada513084.

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Hsieh, K. C., K. Y. Cheng, I. Adesida, John Connelly, and Ramon Martinelli. Surface Engineering for Compliant Epitaxy. Defense Technical Information Center, 2001. http://dx.doi.org/10.21236/ada397507.

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Kolodziejski, Leslie A. Chemical Beam Epitaxy of ZnSe. Defense Technical Information Center, 1989. http://dx.doi.org/10.21236/ada206635.

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Kolodziejski, Leslie A. Chemical Beam Epitaxy of ZnSe. Defense Technical Information Center, 1989. http://dx.doi.org/10.21236/ada213265.

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Kolodziejski, Leslie A. Chemical Beam Epitaxy of ZnSe. Defense Technical Information Center, 1990. http://dx.doi.org/10.21236/ada217375.

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Robinson, Gary L. Gas Source MBE (Molecular Beam Epitaxy). Defense Technical Information Center, 1987. http://dx.doi.org/10.21236/ada181214.

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