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Relevant bibliographies by topics / Epitaxial crystal growth

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Academic literature on the topic 'Epitaxial crystal growth'

Author: Grafiati

Published: 4 June 2021

Last updated: 16 February 2022

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Journal articles on the topic "Epitaxial crystal growth"

1

Resel, Roland, Markus Koini, Jiri Novak, Steven Berkebile, Georg Koller, and Michael Ramsey. "Epitaxial Order Driven by Surface Corrugation: Quinquephenyl Crystals on a Cu(110)-(2×1)O Surface." Crystals 9, no. 7 (July 22, 2019): 373. http://dx.doi.org/10.3390/cryst9070373.

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A 30 nm thick quinquephenyl (5P) film was grown by molecular beam deposition on a Cu(110)(2×1)O single crystal surface. The thin film morphology was studied by light microscopy and atomic force microscopy and the crystallographic structure of the thin film was investigated by X-ray diffraction methods. The 5P molecules crystallise epitaxially with (201)5P parallel to the substrate surface (110)Cu and with their long molecular axes parallel to [001]Cu. The observed epitaxial alignment cannot be explained by lattice matching calculations. Although a clear minimum in the lattice misfit exists, it is not adapted by the epitaxial growth of 5P crystals. Instead the formation of epitaxially oriented crystallites is determined by atomic corrugations of the substrate surface, such that the initially adsorbed 5P molecules fill with its rod-like shape the periodic grooves of the substrate. Subsequent crystal growth follows the orientation and alignment of the molecules taken within the initial growth stage.

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Hayashi, Koya, M. Tomohara, K. Fujino, Genta Sakane, and Y. Katayama. "Crystal Growth of Calcite Nano-Plate by Alternate Soaking Method, Using CDS Crystals." Advances in Science and Technology 63 (October 2010): 425–30. http://dx.doi.org/10.4028/www.scientific.net/ast.63.425.

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Hetero-epitaxial growth of calcite crystals on calcium dodecyl sulfate (Ca(DS)2 = CDS) single crystals was studied by alternate soaking method. The calcite (006) oriented single crystals grow on the (001) surface of the CDS. The hetero-epitaxial growth mechanism is discussed by the lattice matching of the a-c planes of calcite and CDS according to the structure data of the CDS single crystal.

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Powell, Adrian R., Joseph J. Sumakeris, Yuri Khlebnikov, Michael J. Paisley, R. T. Leonard, Eugene Deyneka, Sumit Gangwal, et al. "Bulk Growth of Large Area SiC Crystals." Materials Science Forum 858 (May 2016): 5–10. http://dx.doi.org/10.4028/www.scientific.net/msf.858.5.

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The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous epitaxial layers are discussed. We review the present status of 150 mm and 200 mm substrate quality at Cree, Inc. in terms of crystallinity, dislocation density as well as the final substrate surface quality.

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Yu, Tingting, Zhaohui Ren, Shan Jiang, Siyu Gong, Ming Li, Xiao Wei, Ge Shen, and Gaorong Han. "Single-crystal PbTiO3/PbZrO3 composite fibers formed by diffusion and epitaxial growth." CrystEngComm 16, no. 44 (2014): 10314–20. http://dx.doi.org/10.1039/c4ce01347f.

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Single-crystal PbTiO₃/PbZrO₃ (PT/PZ) composite fibers were prepared under hydrothermal conditions for the first time, which had an epitaxial growth relationship between single-crystal perovskite PT nanofibers and PZ crystals.

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Washburn, Jack, Eric P. Kvam, and Zuzanna Liliental-Weber. "Defect formation in epitaxial crystal growth." Journal of Electronic Materials 20, no. 2 (February 1991): 155–61. http://dx.doi.org/10.1007/bf02653317.

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Komatsu, Keiji, Pineda Marulanda David Alonso, Nozomi Kobayashi, Ikumi Toda, Shigeo Ohshio, Hiroyuki Muramatsu, and Hidetoshi Saitoh. "Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition." Journal of Materials Science Research 5, no. 2 (January 31, 2016): 56. http://dx.doi.org/10.5539/jmsr.v5n2p56.

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<p class="1Body">MgO films were epitaxially grown on single crystal MgO substrates by atmospheric-pressure chemical vapor deposition (CVD). Reciprocal lattice mappings and X-ray reflection pole figures were used to evaluate the crystal quality of the synthesized films and their epitaxial relation to their respective substrates. The X-ray diffraction profiles indicated that the substrates were oriented out-of-plane during MgO crystal growth. Subsequent pole figure measurements showed how all the MgO films retained the substrate in-plane orientations by expressing the same pole arrangements. The reciprocal lattice mappings indicated that the whisker film showed a relatively strong streak while the continuous film showed a weak one. Hence, highly crystalline epitaxial MgO thin films were synthesized on single crystal MgO substrates by atmospheric-pressure CVD.</p>

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Seo, Jung Doo, Joon Ho An, Jung Gon Kim, Jung Kyu Kim, Myung Ok Kyun, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, and Kap Ryeol Ku. "An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method." Materials Science Forum 556-557 (September 2007): 9–12. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.9.

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SiC single crystal ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was systematically compared. In this study, the conventional SiC seed material and the new SiC seed material with an inserted SiC epitaxial layer on a seed surface were used as a seed for SiC bulk growth. The inserted epitaxial layer was grown by a sublimation epitaxy method called the CST with a low growth rate of 2μm/h. N-type 2”-SiC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of below 1017/cm3 were determined from the absorption spectrum and Hall measurements. The slightly higher growth rate and carrier concentration were obtained in SiC single crystal ingot grown on new SiC seed materials with the inserted epitaxial layer on the seed surface, maintaining the high quality.

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Yoon, Dae Sung, Chang Jung Kim, Joon Sung Lee, Won Jong Lee, and Kwangsoo No. "Epitaxial growth of sol-gel PLZT thin films." Journal of Materials Research 9, no. 2 (February 1994): 420–25. http://dx.doi.org/10.1557/jmr.1994.0420.

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Epitaxial lead lanthanum zirconate titanate [PLZT(9/50/50)] thin films were fabricated on various single crystal substrates using the spin coating of metallo-organic solutions. The films were heat-treated at 700 °C for 1 h using the direct insertion method. The films were epitaxially grown with (100), (100), and (110) being parallel to the SrTiO3(100), the MgO(100), and the sapphire (0112) substrates, respectively. The epitaxy of the films was investigated using x-ray diffraction, pole figures, rocking curves, and scanning electron microscopy.

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Menke, Christoph. "A parameter study of epitaxial crystal growth." Chaos, Solitons & Fractals 11, no. 6 (May 2000): 841–52. http://dx.doi.org/10.1016/s0960-0779(98)00231-8.

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10

Das Sarma, S. "Atomistic numerical simulation of epitaxial crystal growth." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 5, no. 4 (July 1987): 1179. http://dx.doi.org/10.1116/1.583707.

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Dissertations / Theses on the topic "Epitaxial crystal growth"

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Luse, Christopher. "Dynamics of epitaxial growth and recovery." Diss., Georgia Institute of Technology, 1994. http://hdl.handle.net/1853/27651.

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Rajavel, Damodaran. "Molecular beam epitaxial and chemical beam epitaxial growth and doping studies of (001) CdTe." Diss., Georgia Institute of Technology, 1991. http://hdl.handle.net/1853/11129.

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Little, Scott Allen. "Equilibrium microstructure of epitaxial thin films." Diss., Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/27652.

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Tong, Wusheng. "Chemical beam epitaxial growth of ZnS : growth kinetics and novel electroluminescent strutures." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/31012.

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Levandovsky, Artem. "Structure and dynamics of interfaces in the epitaxial growth and erosion on (110) and (100) crystal surfaces." Morgantown, W. Va. : [West Virginia University Libraries], 2004. https://etd.wvu.edu/etd/controller.jsp?moduleName=documentdata&jsp%5FetdId=3731.

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Thesis (Ph. D.)--West Virginia University, 2004.
Title from document title page. Document formatted into pages; contains vii, 129 p. : ill. (some col.). Vita. Includes abstract. Includes bibliographical references.

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Decoster, Thibault. "Stabilising alloys in non-equilibrium crystal structures by epitaxial growth." Thesis, University of Birmingham, 2013. http://etheses.bham.ac.uk//id/eprint/3849/.

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Thin film and surface science is an active field with important technological applications as illustrated by the transistor and by the recording head. This thesis relates thin film and surface science experiments applied to quasicrystalline materials, ferromagnetic alloys and electron tomography. These systems have strong potentials for technological applications. Epitaxial deposition is a powerful tool to create structures which are non-stable in the bulk state. For a better understanding of the quasicrystals' physical properties, one wants to grow quasicrystalline thin films of reduced chemical complexity. Single elements don't form quasicrystalline thin films beyond a monolayer. This thesis reports the successful growth of binary AlNi quasicrystal thin films in the multilayer regime. This thesis reports also detailed analysis of annealing and phase transition related structures on different surface orientations of d-AlNiCo. The equilibrium structure of MnSb is of the NiAs type but other structures with theoretical 100% polarisation can be stabilised by epitaxy. The surface magnetism of the MnSb thin film with equilibrium bulk structure grown on GaAs(111) has been imaged by spin-polarised low-energy electron microscopy revealing the spin direction mapping of magnetic domains at the surface of MnSb. Atomic resolution is routinely obtained with the current generation of transmission electron microscopes. For three-dimensional atomic resolution, the problem is to obtain suitable samples. In this thesis, we report the development of instruments and a methodology to fabricate atomically flat terraces with nanometre dimension at the tip of etched tungsten wires and the MBE growth of Au clusters on these terraces.

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Ming, Fan. "Theoretical studies of the epitaxial growth of graphene." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/42818.

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Graphene, a sheet of carbon atoms organized in a honeycomb lattice, is a two dimensional crystal. Even though the material has been known for a long time, only recently has it stimulated considerable interest across different research areas. Graphene is interesting not only as a platform to study fundamental physics in two dimensions, but it also has great potential for post-silicon microelectronics owing to its exceptional electronic properties. Of the several methods known to produce graphene, epitaxial growth of graphene by sublimation of silicon carbide is probably the most promising for practical applications. This thesis is a theoretical study of the growth kinetics of epitaxial graphene on SiC(0001). We propose a step-flow growth model using coarse-grained kinetic Monte Carlo (KMC) simulations and mean-field rate equations to study graphene growth on both vicinal and nano-faceted SiC surfaces. Our models are consistent with experimental observations and provide quantitative results which will allow experimenters to interpret the growth morphology and extract energy barriers from experiments. Recently, it has been shown that graphene grown epitaxially on metal surfaces may lead to potential applications such as large area transparent electrodes. To study deposition-type epitaxial growth, we investigate a new theoretical approach to this problem called the phase field method. Compared to other methods this method could be less computationally intensive, and easier to implement at large spatial scales for complicated epitaxial growth situations.

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Benson, J. David. "Surface reaction kinetics of molecular beam epitaxial growth of CdTe." Diss., Georgia Institute of Technology, 1987. http://hdl.handle.net/1853/32852.

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Yao, Yao. "Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers." Research Showcase @ CMU, 2017. http://repository.cmu.edu/dissertations/921.

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Gallium Oxide (Ga2O3) has emerged over the last decade as a new up-and-coming alternative to traditional wide bandgap semiconductors. It exists as five polymorphs (α-, β-, γ-, δ-, and ε-Ga2O3), of which β-Ga2O3 is the thermodynamically stable form, and the most extensively studied phase. β-Ga2O3 has a wide bandgap of ~4.8 eV and exhibits a superior figure-of-merit for power devices compared to other wide bandgap materials, such as SiC and GaN. These make β-Ga2O3 a promising candidate in a host of electronic and optoelectronic applications. Recent advances in β-Ga2O3 single crystals growth have also made inexpensive β-Ga2O3 single crystal grown from the melt a possibility in the near future. Despite the plethora of literature on β-Ga2O3-based devices, understanding of contacts to this material --- a device component that fundamentally determines device characteristics — remained lacking. For this research, ohmic and Schottky metal contacts to Sn-doped β-Ga2O3 (-201) single crystal substrates, unintentionally doped (UID) homoepitaxial β-Ga2O3 (010) on Sn-doped β-Ga2O3 grown by molecular beam epitaxy (MBE), and UID heteroepitaxial β-Ga2O3 (-201) epitaxial layers on c-plane sapphire by metal-organic chemical vapor deposition (MOCVD) were investigated. Each of the substrates was characterized for their structural, morphological, electrical, and optical properties, the results will be presented in the following document. Nine metals (Ti, In, Ag, Sn, W, Mo, Sc, Zn, and Zr) with low to moderate work functions were studied as possible ohmic contacts to β-Ga2O3. It was found that select metals displayed either ohmic (Ti and In) or pseudo-ohmic (Ag, Sn and Zr) behavior under certain conditions. However, the morphology was often a problem as many thin film metal contacts dewetted the substrate surface. Ti with a Au capping layer with post-metallization annealing treatment was the only consistently reliable ohmic contact to β-Ga2O3. It was concluded that metal work function is not a dominant factor in forming an ohmic contact to β-Ga2O3 and that limited interfacial reactions appear to play an important role. Prior to a systematic study of Schottky contacts to β-Ga2O3, a comparison of the effects of five different wet chemical surface treatments on the β-Ga2O3 Schottky diodes was made. It was established that a treatment with an organic solvent clean followed by HCl, H2O2 and a deionized water rinse following each step yielded the best results. Schottky diodes based on (-201) β-Ga2O3 substrates and (010) β-Ga2O3 homoepitaxial layers were formed using five different Schottky metals with moderate to high work functions: W, Cu, Ni, Ir, and Pt. Schottky barrier heights (SBHs) calculated from current-voltage (I-V) and capacitance-voltage (C-V) measurements of the five selected metals were typically in the range of 1.0 – 1.3 eV and 1.6 – 2.0 eV, respectively, and showed little dependence on the metal work function. Several diodes also displayed inhomogeneous Schottky barrier behavior at room temperature. The results indicate that bulk or near-surface defects and/or unpassivated surface states may have a more dominant effect on the electrical behavior of these diodes compared to the choice of Schottky metal and its work function. Lastly, working with collaborators at Structured Materials Industries (SMI) Inc., heteroepitaxial films of Ga2O3 were grown on c-plane sapphire (001) using a variety of vapor phase epitaxy methods, including MOVPE, and halide vapor phase epitaxy (HVPE). The stable phase β-Ga2O3 was observed when grown using MOVPE technique, regardless of precursor flow rates, at temperatures ranging between 500 – 850 °C. With HVPE growth techniques, instead of the stable β-phase, we observed the growth of the metastable α- and ε-phases, often a combination of the two. Cross-sectional transmission electron microscopy (TEM) shows the better lattice matched α-phase first growing semi-coherently on the c-plane sapphire substrate, followed by domain matched epitaxy of ε-Ga2O3 on top. Secondary ion mass spectrometry (SIMS) revealed that epilayers forming the ε-phase contain higher concentrations of chlorine, which suggests that compressive stress due to Cl- impurities may play a role in the growth of ε-Ga2O3 despite it being less than thermodynamically favorable.

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MacPherson, Glyn. "Distribution and control of misfit dislocations in indium gallium arsenide layers grown on gallium arsenide substrates." Thesis, University of Liverpool, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318239.

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Books on the topic "Epitaxial crystal growth"

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International Conference on Epitaxial Crystal Growth (1st 1990 Budapest, Hungary). Epitaxial crystal growth: Proceedings of the 1st International Conference on Epitaxial Crystal Growth, Budapest, Hungary, April 1-7, 1990. Edited by Lendvay E. Brookfield, VT: Trans Tech Publications, 1991.

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Liquid-phase epitaxial growth of III-V compound semiconductor materials and their device applications. Bristol: A. Hilger, 1990.

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International, Conference on Vapour Growth and Epitaxy (8th 1994 Freiburg Germany). Vapour growth and epitaxy 1994: Proceedings of the Eighth International Conference on Vapour Growth and Epitaxy, Freiburg, Germany, 24-29 July 1994. Amsterdam, Netherlands: North-Holland, 1995.

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Leys, Maarten Reinier. Metal organic vapour phase epitaxy for the growth of III-V semiconductor structures =: Metaalorganische gasfase epitaxie voor de groel van III-V halfgeleiderstructuren. [S.l: s.n., 1990.

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V, Stefan, and Zharikov E. V, eds. Crystal and epitaxial growth. 2nd ed. La Jolla, CA: Stefan University Press, 2002.

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6

Miroslav, Kotrla, ed. Atomistic aspects of epitaxial growth. Dordrecht: Kluwer Academic Publishers, 2002.

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Takashi, Hariu, ed. Low temperature epitaxial growth of semiconductors. Singapore: World Scientific, 1991.

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h International Conference on Epitaxial Crystal Growth 1990 Budapest. Epitaxial Crystal Growth: Proceedings of the 1st International Conference on Epitaxial Crystal Growth, Budapest, Hungary, April 1-7, 1990. Trans Tech Pubn, 1991.

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9

Axel, Voigt, ed. Multiscale modeling in epitaxial growth. Basel: Birkhäuser, 2005.

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Voigt, Axel. Multiscale Modeling in Epitaxial Growth. Springer, 2008.

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Book chapters on the topic "Epitaxial crystal growth"

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Mullin, J. B. "Single Crystal Growth II: Epitaxial Growth." In Electronic Materials, 127–42. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3818-9_10.

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Zytkiewicz, Zbigniew R. "Epitaxial Lateral Overgrowth of Semiconductors." In Springer Handbook of Crystal Growth, 999–1039. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-74761-1_30.

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Friedrich, Jochen, Birgit Kallinger, Patrick Berwian, and Elke Meissner. "Interactions of Dislocations during Epitaxial Growth of SiC and GaN." In Crystal Growth Technology, 137–50. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527632879.ch8.

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Garland, James W., and Sivalingam Sivananthan. "Molecular-Beam Epitaxial Growth of HgCdTe." In Springer Handbook of Crystal Growth, 1069–132. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-74761-1_32.

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Capper, Peter, Stuart Irvine, and Tim Joyce. "Epitaxial Crystal Growth: Methods and Materials." In Springer Handbook of Electronic and Photonic Materials, 271–301. Boston, MA: Springer US, 2006. http://dx.doi.org/10.1007/978-0-387-29185-7_14.

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Capper, Peter, Stuart Irvine, and Tim Joyce. "Epitaxial Crystal Growth: Methods and Materials." In Springer Handbook of Electronic and Photonic Materials, 1. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48933-9_14.

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Henkelman, Graeme, and Hannes Jónsson. "Long-Time-Scale Simulations of Al(100) Crystal Growth." In Atomistic Aspects of Epitaxial Growth, 63–74. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0391-9_6.

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Pierre-Louis, O., and M. Haftel. "Oscillatory Driving of Crystal Surfaces: A Route to Controlled Pattern Formation." In Atomistic Aspects of Epitaxial Growth, 243–53. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0391-9_20.

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Bhat, Ishwara B. "Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition." In Springer Handbook of Crystal Growth, 939–66. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-74761-1_28.

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Moerman, I., and P. Demeester. "Advanced Epitaxial Techniques for III-V Materials." In Science and Technology of Crystal Growth, 137–48. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0137-0_11.

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Conference papers on the topic "Epitaxial crystal growth"

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Davis, R. F., S. M. Bishop, S. Mita, R. Collazo, Z. J. Reitmeier, and Z. Sitar. "Epitaxial Growth Of Gallium Nitride." In PERSPECTIVES ON INORGANIC, ORGANIC, AND BIOLOGICAL CRYSTAL GROWTH: FROM FUNDAMENTALS TO APPLICATIONS: Basedon the lectures presented at the 13th International Summer School on Crystal Growth. AIP, 2007. http://dx.doi.org/10.1063/1.2751931.

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Evans, J. W., Yong Han, Bariş Ünal, Maozhi Li, K. J. Caspersen, Dapeng Jing, A. R. Layson, et al. "From Initial to Late Stages of Epitaxial Thin Film Growth: STM Analysis and Atomistic or Coarse-Grained Modeling." In SELECTED TOPICS ON CRYSTAL GROWTH: 14th International Summer School on Crystal Growth. AIP, 2010. http://dx.doi.org/10.1063/1.3476231.

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Stringfellow, G. B. "Fundamentals of Vapor Phase Epitaxial Growth Processes." In PERSPECTIVES ON INORGANIC, ORGANIC, AND BIOLOGICAL CRYSTAL GROWTH: FROM FUNDAMENTALS TO APPLICATIONS: Basedon the lectures presented at the 13th International Summer School on Crystal Growth. AIP, 2007. http://dx.doi.org/10.1063/1.2751909.

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Kordoš, Peter. "FUNDAMENTALS OF LIQUID-PHASE EPITAXIAL GROWTH." In Proceedings of the International School on Crystal Growth and Characterization of Advanced Materials. WORLD SCIENTIFIC, 1988. http://dx.doi.org/10.1142/9789814541589_0009.

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Kacyuba, Aleksey, Anatoly Dvurechenskii, Gennady Kamaev, Vladimir Volodin, and Viktor Kirienko. "RADIATION-INDUCED GROWTH EPITAXIAL CASI2 FILM." In International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1587.silicon-2020/161-163.

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In this work investigated crystal structure of films formed by molecular beam epitaxy (MBE) of CaSi2 on Si (111), under electron irradiation by the method of Raman light scattering (RS), it was found that a CaSi2 film is formed at the interface between the silicon substrate and the epitaxially growing CaF2 film under the influence of an electron beam.

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Faleev, Nikolai N., Christiana B. Honsberg, and David J. Smith. "Four Stages of Defect Creation in Epitaxial Structures: High Resolution X-Ray Diffraction and Transmission Electron Microscopy Characterization." In ISTFA 2012. ASM International, 2012. http://dx.doi.org/10.31399/asm.cp.istfa2012p0337.

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Abstract Different epitaxial structures have been studied by high-resolution x-ray diffraction and x-ray topography, Transmission Electron Microscopy and Atomic Force Microscopy to establish correlations between epitaxial growth conditions and crystal perfection. It was confirmed that epitaxial growth under initial elastic stress inevitably leads to the creation of extended crystal defects like dislocation loops and edge dislocations in the volume of epitaxial structures, which strongly affect crystal perfection and physical properties of future devices. It was found that the type of created defects, their density and spatial distribution strongly depended on growth conditions: the value and sign of the initial elastic strain, the elastic constants of solid solutions, the temperature of deposition and growth rate, and the thickness of the epitaxial layers. All of the investigated structures were classified by their crystal perfection, using the volume density of extended defects as a parameter. It was found that the accommodation and relaxation of initial elastic stress and creation of crystal defect were up to four stages “chain” processes, necessary to stabilize the crystal structure at a level corresponding to the deterioration power of particular growth conditions.

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Akiyama, Kensuke, Satoru Kaneko, and Hiroshi Funakubo. "Epitaxial Growth of β-FeSi2 on Single Crystal Insulator." In 2004 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2004. http://dx.doi.org/10.7567/ssdm.2004.d-9-4.

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Richter, Wolfgang. "Surface and Thin Film Analysis during Metal Organic Vapour Phase Epitaxial Growth." In PERSPECTIVES ON INORGANIC, ORGANIC, AND BIOLOGICAL CRYSTAL GROWTH: FROM FUNDAMENTALS TO APPLICATIONS: Basedon the lectures presented at the 13th International Summer School on Crystal Growth. AIP, 2007. http://dx.doi.org/10.1063/1.2751925.

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BORISOV, Evgenii, Vadim SUFIIAROV, Igor POLOZOV, and Dmitriy Masaylo. "DEVELOPMENT OF SELECTIVE LASER MELTING PARAMETERS FOR EPITAXIAL CRYSTAL GROWTH." In METAL 2019. TANGER Ltd., 2019. http://dx.doi.org/10.37904/metal.2019.945.

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Evans, J. W., P. A. Thiel, and Maozhi Li. "Kinetic Monte Carlo Simulation of Epitaxial Thin Film Growth: Formation of Submonolayer Islands and Multilayer Mounds." In PERSPECTIVES ON INORGANIC, ORGANIC, AND BIOLOGICAL CRYSTAL GROWTH: FROM FUNDAMENTALS TO APPLICATIONS: Basedon the lectures presented at the 13th International Summer School on Crystal Growth. AIP, 2007. http://dx.doi.org/10.1063/1.2751916.

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Reports on the topic "Epitaxial crystal growth"

1

Dapkus, P. D. Apparatus for Analysis of Epitaxial Crystal Growth. Fort Belvoir, VA: Defense Technical Information Center, July 1986. http://dx.doi.org/10.21236/ada172890.

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2

ADVANCED FUEL RESEARCH INC EAST HARTFORD CT. Epitaxial Growth of Single Crystal Diamond on Silicon. Fort Belvoir, VA: Defense Technical Information Center, September 1991. http://dx.doi.org/10.21236/ada242622.

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3

Rowen, Adam M., Daniel David Koleske, Hongyou Fan, C. Jeffrey Brinker, David Bruce Burckel, John Dalton Williams, Christian L. Arrington, and William Arthur Steen. Nanoporous films for epitaxial growth of single crystal semiconductor materials : final LDRD report. Office of Scientific and Technical Information (OSTI), October 2007. http://dx.doi.org/10.2172/966925.

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