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Journal articles on the topic 'Epitaxial crystal growth'

Author: Grafiati

Published: 4 June 2021

Last updated: 16 February 2022

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1

Resel, Roland, Markus Koini, Jiri Novak, Steven Berkebile, Georg Koller, and Michael Ramsey. "Epitaxial Order Driven by Surface Corrugation: Quinquephenyl Crystals on a Cu(110)-(2×1)O Surface." Crystals 9, no. 7 (July 22, 2019): 373. http://dx.doi.org/10.3390/cryst9070373.

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A 30 nm thick quinquephenyl (5P) film was grown by molecular beam deposition on a Cu(110)(2×1)O single crystal surface. The thin film morphology was studied by light microscopy and atomic force microscopy and the crystallographic structure of the thin film was investigated by X-ray diffraction methods. The 5P molecules crystallise epitaxially with (201)5P parallel to the substrate surface (110)Cu and with their long molecular axes parallel to [001]Cu. The observed epitaxial alignment cannot be explained by lattice matching calculations. Although a clear minimum in the lattice misfit exists, it is not adapted by the epitaxial growth of 5P crystals. Instead the formation of epitaxially oriented crystallites is determined by atomic corrugations of the substrate surface, such that the initially adsorbed 5P molecules fill with its rod-like shape the periodic grooves of the substrate. Subsequent crystal growth follows the orientation and alignment of the molecules taken within the initial growth stage.

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2

Hayashi, Koya, M. Tomohara, K. Fujino, Genta Sakane, and Y. Katayama. "Crystal Growth of Calcite Nano-Plate by Alternate Soaking Method, Using CDS Crystals." Advances in Science and Technology 63 (October 2010): 425–30. http://dx.doi.org/10.4028/www.scientific.net/ast.63.425.

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Hetero-epitaxial growth of calcite crystals on calcium dodecyl sulfate (Ca(DS)2 = CDS) single crystals was studied by alternate soaking method. The calcite (006) oriented single crystals grow on the (001) surface of the CDS. The hetero-epitaxial growth mechanism is discussed by the lattice matching of the a-c planes of calcite and CDS according to the structure data of the CDS single crystal.

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3

Powell, Adrian R., Joseph J. Sumakeris, Yuri Khlebnikov, Michael J. Paisley, R. T. Leonard, Eugene Deyneka, Sumit Gangwal, et al. "Bulk Growth of Large Area SiC Crystals." Materials Science Forum 858 (May 2016): 5–10. http://dx.doi.org/10.4028/www.scientific.net/msf.858.5.

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The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous epitaxial layers are discussed. We review the present status of 150 mm and 200 mm substrate quality at Cree, Inc. in terms of crystallinity, dislocation density as well as the final substrate surface quality.

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4

Yu, Tingting, Zhaohui Ren, Shan Jiang, Siyu Gong, Ming Li, Xiao Wei, Ge Shen, and Gaorong Han. "Single-crystal PbTiO3/PbZrO3 composite fibers formed by diffusion and epitaxial growth." CrystEngComm 16, no. 44 (2014): 10314–20. http://dx.doi.org/10.1039/c4ce01347f.

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Single-crystal PbTiO₃/PbZrO₃ (PT/PZ) composite fibers were prepared under hydrothermal conditions for the first time, which had an epitaxial growth relationship between single-crystal perovskite PT nanofibers and PZ crystals.

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5

Washburn, Jack, Eric P. Kvam, and Zuzanna Liliental-Weber. "Defect formation in epitaxial crystal growth." Journal of Electronic Materials 20, no. 2 (February 1991): 155–61. http://dx.doi.org/10.1007/bf02653317.

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6

Komatsu, Keiji, Pineda Marulanda David Alonso, Nozomi Kobayashi, Ikumi Toda, Shigeo Ohshio, Hiroyuki Muramatsu, and Hidetoshi Saitoh. "Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition." Journal of Materials Science Research 5, no. 2 (January 31, 2016): 56. http://dx.doi.org/10.5539/jmsr.v5n2p56.

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<p class="1Body">MgO films were epitaxially grown on single crystal MgO substrates by atmospheric-pressure chemical vapor deposition (CVD). Reciprocal lattice mappings and X-ray reflection pole figures were used to evaluate the crystal quality of the synthesized films and their epitaxial relation to their respective substrates. The X-ray diffraction profiles indicated that the substrates were oriented out-of-plane during MgO crystal growth. Subsequent pole figure measurements showed how all the MgO films retained the substrate in-plane orientations by expressing the same pole arrangements. The reciprocal lattice mappings indicated that the whisker film showed a relatively strong streak while the continuous film showed a weak one. Hence, highly crystalline epitaxial MgO thin films were synthesized on single crystal MgO substrates by atmospheric-pressure CVD.</p>

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7

Seo, Jung Doo, Joon Ho An, Jung Gon Kim, Jung Kyu Kim, Myung Ok Kyun, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, and Kap Ryeol Ku. "An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method." Materials Science Forum 556-557 (September 2007): 9–12. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.9.

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SiC single crystal ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was systematically compared. In this study, the conventional SiC seed material and the new SiC seed material with an inserted SiC epitaxial layer on a seed surface were used as a seed for SiC bulk growth. The inserted epitaxial layer was grown by a sublimation epitaxy method called the CST with a low growth rate of 2μm/h. N-type 2”-SiC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of below 1017/cm3 were determined from the absorption spectrum and Hall measurements. The slightly higher growth rate and carrier concentration were obtained in SiC single crystal ingot grown on new SiC seed materials with the inserted epitaxial layer on the seed surface, maintaining the high quality.

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8

Yoon, Dae Sung, Chang Jung Kim, Joon Sung Lee, Won Jong Lee, and Kwangsoo No. "Epitaxial growth of sol-gel PLZT thin films." Journal of Materials Research 9, no. 2 (February 1994): 420–25. http://dx.doi.org/10.1557/jmr.1994.0420.

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Epitaxial lead lanthanum zirconate titanate [PLZT(9/50/50)] thin films were fabricated on various single crystal substrates using the spin coating of metallo-organic solutions. The films were heat-treated at 700 °C for 1 h using the direct insertion method. The films were epitaxially grown with (100), (100), and (110) being parallel to the SrTiO3(100), the MgO(100), and the sapphire (0112) substrates, respectively. The epitaxy of the films was investigated using x-ray diffraction, pole figures, rocking curves, and scanning electron microscopy.

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9

Menke, Christoph. "A parameter study of epitaxial crystal growth." Chaos, Solitons & Fractals 11, no. 6 (May 2000): 841–52. http://dx.doi.org/10.1016/s0960-0779(98)00231-8.

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10

Das Sarma, S. "Atomistic numerical simulation of epitaxial crystal growth." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 5, no. 4 (July 1987): 1179. http://dx.doi.org/10.1116/1.583707.

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11

Tamaki, Jun, Gregory K. L. Goh, and Fred F. Lange. "Novel epitaxial growth of barium titanate thin films by electrodeposition." Journal of Materials Research 15, no. 12 (December 2000): 2583–86. http://dx.doi.org/10.1557/jmr.2000.0368.

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Electrodeposition was used to grow epitaxially BaTiO3 thin films on SrTiO3 single-crystal substrates with La0.7Sr0.3MnO3 (LSMO) conducting buffer layers. The epitaxial films appeared to consist of very small (ø10 nm) particles. The film completely covered the substrate when the reaction was performed at temperatures between 60 and 90 °C with LSMO potentials of –0.5 to –1.0 V against a Pt counter-electrode. It appeared that an electrophoretic force, acting on BaTiO3 nuclei within the solution, facilitated the deposition of the film.

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12

Yamada, Yoshimitsu. "The SiC Single Crystal Growth from Nanomaterial Precursor." MRS Advances 4, no. 50 (2019): 2709–15. http://dx.doi.org/10.1557/adv.2019.250.

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ABSTRACTUnlike the conventional layer by layer growth ,three dimensional growth experiments of SiC single crystal by the Chemical Particle Deposition (CPD)method were carried out both on the polar and nonpolar plane of the SiC seed crystal. The comparison of the morphology of the grown crystals on both samples indicated that the electric field formed by the seed crystal strongly effected the diffusion of the supplied Si and C atoms and their compounds to grow the epitaxial crystal. In spite of the low ionicity of Si-C bonds, this remarkable effect of the electric field on the three dimensional crystal growth mechanism in the CPD method strongly suggested its contribution to the ordering of the stacked layers with its long working range, beyond the deformed boundary layers between the seed surface and the grown crystal.

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13

Тумаркин, А. В., and А. А. Одинец. "Доменный эпитаксиальный рост сегнетоэлектрических пленок титаната бария-стронция на сапфире." Физика твердого тела 60, no. 1 (2018): 88. http://dx.doi.org/10.21883/ftt.2018.01.45293.200.

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AbstractA model of the epitaxial growth of crystalline multicomponent films on single-crystal substrates with a domain correspondence is presented using a solid solution of barium strontium titanate on sapphire substrates ( r cut). The domain epitaxial growth suggests the matching of the lattice planes of the film and the substrate having similar structures by comparison of domain multiple of an integral number of the interplanar spacings. Variation of the component composition of the solid solution enables changes in the domain size in the range sufficient for epitaxial growth. This method can be used to project the epitaxial growth of films of various solid solutions on single-crystal substrates.

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14

Miyahara, Nanoka, Seichi Urakawa, Daisuke Yamashita, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani, and Naho Itagaki. "Sputter Epitaxy of (ZnO)x(InN)1-x films on Lattice-mismatched Sapphire Substrate." MRS Advances 4, no. 27 (2019): 1551–56. http://dx.doi.org/10.1557/adv.2019.17.

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ABSTRACTWe have recently developed a novel semiconductor, (ZnO)x(InN)1-x (abbreviated to ZION). In this study, we have succeeded in direct epitaxial growth of ZION films on 19–21%-lattice-mismatched c-plane sapphire by radio-frequency (RF) magnetron sputtering. X-ray diffraction analysis showed that there is no epitaxial relationship between ZION films fabricated at room-temperature (RT) and the sapphire substrates, while the films fabricated at 450oC grow epitaxially on the sapphire substrates. From the analysis of time evolution of the surface morphology, the process for the epitaxial growth of ZION on sapphire is found to consist of three stages. They are (i) initial nucleation of ZION crystallites with crystal axis aligned to the sapphire substrate, (ii) island growth from the initially formed nuclei and subsequent nucleation (secondary nucleation) of ZION crystallites, and (iii) lateral growth of ZION islands originated from initially formed nuclei. On the other hand, non-epitaxial ZION films fabricated at RT just grow in 3D mode. From these results, we conclude that the substrate temperature is the key to control of nucleation and subsequent epitaxial growth of ZION films on the lattice-mismatched substrate.

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15

Camarda, Massimo, Antonino La Magna, and Francesco La Via. "Evolution of Extended Defects during Epitaxial Growths: A Monte Carlo Study." Materials Science Forum 679-680 (March 2011): 48–54. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.48.

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Three dimensional kinetic Monte Carlo simulations on super-lattices are applied to study the evolution of stacking faults during epitaxial growths. We show that, in the case of misoriented close packed substrates, these defects can either extend throughout the entire epilayer (i.e. extended from the substrate up to the surface) or close in dislocation loops, in dependence of the deposition conditions. We explain this behavior in terms of a surface kinetic competition between these defects and the surrounding crystal: if the local growth rate of the defect is larger compared with that of the perfect crystal the defect will expands, otherwise it will closes. This mechanisms allows to explain several experimental results on homo and hetero epitaxies.

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16

BRAUN, WOLFGANG, and KLAUS H. PLOOG. "IN SITU STUDIES OF EPITAXIAL GROWTH BY SYNCHROTRON X-RAY DIFFRACTION." Surface Review and Letters 13, no. 02n03 (April 2006): 155–66. http://dx.doi.org/10.1142/s0218625x06008256.

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X-rays are ideal to study the structure of crystals due to their weak interaction with matter and in most cases allow a quantitative analysis using kinematical theory. To study the incorporation of atoms during crystal growth and to analyze the kinetics on the crystal surface high primary beam intensities available at synchrotrons are required. Our studies of the molecular beam epitaxy growth of III–V semiconductors reveal that, despite their similarity in crystal structure, the surface kinetics of GaAs (001), InAs (001) and GaSb (001) differ strongly. GaAs shows an unexpectedly large coarsening exponent outside the predicted range of Ostwald ripening models during recovery. GaSb exhibits dramatically different surface morphology variations during growth and recovery. Overgrowth of GaAs by epitaxial MnAs demonstrates the ability of X-ray diffraction to follow an interface as it is buried during heteroepitaxy, which is not possible by reflection high-energy electron diffraction.

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17

Hanawa, T., N. Kikuchi, K. Nishio, K. Tonooka, R. Wang, and T. Mamiya. "Epitaxial Growth of (Na,K)NbO3 based materials on SrTiO3 by pulsed laser deposition." MRS Proceedings 1633 (2014): 19–24. http://dx.doi.org/10.1557/opl.2014.84.

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ABSTRACTLead-free, piezoelectric (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films were epitaxially grown onto (100) SrTiO3 substrate via pulsed laser deposition. The effects of post-annealing temperature on the crystal phases, mosaic spread, and chemical composition of the deposited (Na,K)NbO3 and (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films were analyzed. Results indicate the epitaxial growth of (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films deposited at an oxygen pressure (PO2) of ≥40 Pa and substrate temperature (Ts) of 800°C. The alkaline-deficiency could be suppressed in the (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 films deposited at PO2 ≥ 70 Pa. AFM profile of the (Na,K)NbO3 post-annealed at 1000°C indicates the epitaxial growth of film with atomically flat step-terrace structure, while that of the (Na,K)NbO3-BaZrO3-(Bi,Li)TiO3 film post-annealed at 1200°C shows relatively smooth surface with step-terrace structure and several cubic crystals. It was also found that the preferential evaporation of alkaline components could be suppressed by annealing under covered substrate condition.

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18

Choudhury, Tanushree H., Xiaotian Zhang, Zakaria Y. Al Balushi, Mikhail Chubarov, and Joan M. Redwing. "Epitaxial Growth of Two-Dimensional Layered Transition Metal Dichalcogenides." Annual Review of Materials Research 50, no. 1 (July 1, 2020): 155–77. http://dx.doi.org/10.1146/annurev-matsci-090519-113456.

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Transition metal dichalcogenide (TMD) monolayers and heterostructures have emerged as a compelling class of materials with transformative properties that may be harnessed for novel device technologies. These materials are commonly fabricated by exfoliation of flakes from bulk crystals, but wafer-scale epitaxy of single-crystal films is required to advance the field. This article reviews the fundamental aspects of epitaxial growth of van der Waals–bonded crystals specific to TMD films. The structural and electronic properties of TMD crystals are initially described along with sources and methods used for vapor phase deposition. Issues specific to TMD epitaxy are critically reviewed, including substrate properties and film-substrate orientation and bonding. The current status of TMD epitaxy on different substrate types is discussed along with characterization techniques for large-areaepitaxial films. Future directions are proposed, including developments in substrates, in situ and full-wafer characterization techniques, and heterostructure growth.

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19

Seki, Kazuaki, Kazuhiko Kusunoki, Shinsuke Harada, and Toru Ujihara. "Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiС Wafer Fabricated by the Solution Growth Method." Materials Science Forum 963 (July 2019): 80–84. http://dx.doi.org/10.4028/www.scientific.net/msf.963.80.

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A 4H-SiC 4° off-wafer fabricated from a bulk crystal grown using the solution method has high quality with extremely low-density threading screw (TSD) and basal plane (BPD) dislocations. For application to electronic devices, we formed an epitaxial layer on the solution-method-prepared wafer via chemical vapor deposition and evaluated the BPD in the epitaxial layer using synchrotron X-ray topography and molten KOH etching. The BPD density of the epitaxial layer formed on the solution-grown crystals was extremely low. Bulk crystals fabricated as wafers by the solution method are expected to be applied to high-voltage bipolar devices that do not suffer from degradation of forward characteristics.

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20

Olson, Ian C., Adam Z. Blonsky, Nobumichi Tamura, Martin Kunz, Boaz Pokroy, Carl P. Romao, Mary Anne White, and Pupa U. P. A. Gilbert. "Crystal nucleation and near-epitaxial growth in nacre." Journal of Structural Biology 184, no. 3 (December 2013): 454–63. http://dx.doi.org/10.1016/j.jsb.2013.10.002.

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21

Menke, Christoph. "Pretzel Orbits in Simulations of Epitaxial Crystal Growth." International Journal of Bifurcation and Chaos 08, no. 07 (July 1998): 1629–39. http://dx.doi.org/10.1142/s0218127498001297.

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A third order autonomous ordinary differential equation is studied that describes stationary solutions of a nonlinear partial differential equation. The PDE models the growth of an epitaxial film on misoriented crystal substrates and is similar to the Kuramoto–Sivashinsky equation, but contains an additional nonlinear term. The equilibria, the periodic solutions, and the heteroclinic orbits of the ODE are analyzed, and stability results are given. Parameter regions are identified where the equilibria and the periodic solutions are unstable, but other bounded solutions exist. Their phase portrait is a double focus ("pretzel") that connects the stable and the unstable manifolds of the equilibria.

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22

Zhang, W. P., and Douglas L. Dorset. "Epitaxial growth and crystal structure analysis of perfluorotetracosane." Macromolecules 23, no. 19 (September 1990): 4322–26. http://dx.doi.org/10.1021/ma00221a021.

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23

Ueda, Yasukiyo. "The Epitaxial Growth of the Methyl Triacontanoate Crystal." Bulletin of the Chemical Society of Japan 59, no. 12 (December 1986): 3775–79. http://dx.doi.org/10.1246/bcsj.59.3775.

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24

Miyadera, Tetsuhiko, Yuto Auchi, Tomoyuki Koganezawa, Hiroyuki Yaguchi, and Masayuki Chikamatsu. "Epitaxial growth of CH3NH3PbI3 on rubrene single crystal." APL Materials 8, no. 4 (April 1, 2020): 041104. http://dx.doi.org/10.1063/1.5142307.

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25

Yang, Yuan, and Shu-Hong Yu. "Crystal-phase-induced epitaxial growth of noble nanomaterials." National Science Review 5, no. 6 (May 16, 2018): 788–89. http://dx.doi.org/10.1093/nsr/nwy053.

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26

Hibino, H., H. Kageshima, and M. Nagase. "Epitaxial few-layer graphene: towards single crystal growth." Journal of Physics D: Applied Physics 43, no. 37 (September 2, 2010): 374005. http://dx.doi.org/10.1088/0022-3727/43/37/374005.

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27

Wang, Lichen, Shihong Song, and E. Ryba. "Epitaxial growth of polyimide on single-crystal surfaces." Journal of Materials Science Letters 11, no. 23 (1992): 1566–69. http://dx.doi.org/10.1007/bf00740834.

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28

Caroccia, Marco, Riccardo Cristoferi, and Laurent Dietrich. "Equilibria Configurations for Epitaxial Crystal Growth with Adatoms." Archive for Rational Mechanics and Analysis 230, no. 3 (May 11, 2018): 785–838. http://dx.doi.org/10.1007/s00205-018-1258-9.

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29

Li, Chunling, Yanwei Liu, Yueliang Zhou, Zhenghao Chen, Hong Chen, and Yong Zhu. "Heteroepitaxial Growth of c-Axis-Oriented BaTiO3:Ce/YBa2Cu3O7-x Bilayer Structure on SrTiO3(100) by Pulsed Laser Deposition." Modern Physics Letters B 11, no. 02n03 (January 30, 1997): 73–79. http://dx.doi.org/10.1142/s0217984997000116.

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c-axis-oriented BaTiO 3 :Ce/YBa 2 Cu 3 O 7-x bilayers have been epitaxially grown on the SrTiO 3(100) substrates by pulsed laser deposition. The crystal structure and epitaxial orientation of the films have been analyzed by the XRD θ/2θ, ω and ϕ scans, and the results indicate that the bilayer thin films have high degree of c-axis-oriented epitaxial crystalline structure. The surface morphology of the thin films was revealed by scanning electron microscopy (SEM). The ferroelectricity of the BaTiO 3 :Ce thin films was verified by the P-E hysteresis loop.

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30

Seifert, Andreas. "Epitaxial growth of PbTiO3 thin films on {100} SrTiO3 from solution precursors." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 576–77. http://dx.doi.org/10.1017/s042482010017061x.

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A mixed Pb-Ti-alkoxide liquid precursor, prepared from lead acetate and titanium iso-propoxide was used to form single crystal PbTiO3 thin films epitaxially on {100} SrTiO3 substrates.A gravimetric analysis of the precursor determined its molarity to 0.55 mol/1 and was carried out by drying the alkoxide overnight and heating it to 600° C for one hour. X-ray diffraction showed the resulting PbTiO3 powder to be single phase perovskite. PbTiO3 thin films were formed by spincoating previously annealed (1400°C, 2h) single crystal SrTiO3 substrates. During this process the precursor dries to a gel-like amorphous solid film that pyrolizes and crystallizes to the oxide during heat-treatment. XRD, SEM, TEM and AFM were used to characterize the progress of the epitaxial layer formation as well as the microstructural evolution of films heated at increasing temperatures, ranging from 400°C to 800°C. For XRD Θ-2Θ scans on PbTiO3 thin films heated at temperatures of 450°C and above, only the {00l} tetragonal PbTiO3 reflections (CPTO=0.4153 nm) could be observed, indicating strongly oriented or epitaxial films ({h00} of PbTiO3 (aPTO=0.3899 nm) is masked by (MX)} of the SrTiO3 substrate (aSTO=0.3904 nm)).

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31

Wasa, Kiyotaka, Toshifumi Satoh, Kenji Tabata, Hideaki Adachi, Yasumufi Yabuuchi, and Kentaro Setune. "Effects of PLT-buffer layer on microstructures of sputtered PLZT thin films epitaxially grown on sapphire." Journal of Materials Research 9, no. 11 (November 1994): 2959–67. http://dx.doi.org/10.1557/jmr.1994.2959.

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The microstructures of sputtered thin films of lead-lanthanum zirconate-titanate (PLZT) on (0001) sapphire substrate have been studied using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Thin films of polycrystalline PLZT (9/65/35), Pb0.91La0.09Zr0.65Ti0.35O3, were prepared on a (0001) sapphire substrate by reactive sputtering, using the dc-magnetron system with a multitarget, Pb, La, Zr, and Ti at the substrate temperature of 700 °C. The PLZT thin films comprised (111) oriented small crystallites of PLZT. Although the average direction of the crystal orientation corresponded to the ideal epitaxial relationship (111) PLZT ‖ (0001) sapphire, the individual crystallites showed misalignment in both the growth direction and the film plane. The thin films could not be considered epitaxially grown films. From analysis of the TEM images, there exists an interfacial region between the PLZT thin film and the substrate. The interfacial region comprises ordered clusters of (111), disordered (101), and/or (110) PLZT crystallites. The presence of the interfacial region will suppress ideal epitaxial growth with uniform crystal orientation. It is confirmed that the addition of the buffer layer of graded composition of PLT-PLZT, between the substrate and the PLZT thin film, will suppress the formation of the disordered interfacial region and will enhance the epitaxial growth of the (111) PLZT on (0001) sapphire with three-dimensional crystal orientations.

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32

Schowalter, L. J., Y. Shusterman, R. Wang, I. Bhat, G. Arunmozhi, and G. A. Slack. "Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 411–16. http://dx.doi.org/10.1557/s1092578300002817.

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High quality, epitaxial growth of AlN and AlxGa1−xN by OMVPE has been demonstrated on single-crystal AlN substrates. Here we report characterization of epitaxial layers on an a-face AlN substrate using Rutherford Backscattering/ion channeling, atomic force microscopy (AFM), x-ray rocking curves, and preliminary electrical characterization. Ion channeling along the [100] axis gives a channeling minimum yield of 1.5% indicating a very high quality epitaxial layer.

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33

Watanabe, Yukimune, Tsuyoshi Horikawa, and Kiichi Kamimura. "The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiC." Materials Science Forum 778-780 (February 2014): 230–33. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.230.

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The carbonized layer for a buffer layer strongly influences the crystalline quality of the 3C-SiC epitaxial films on the Si substrates. The growth mechanism of the carbonized layer strongly depended on the process conditions. The surface of silicon substrate was carbonized under the pressure of 7.8 × 10-3 Pa or 7.8 × 10-2 Pa in this research. Under the relatively low pressure of 7.8 × 10-3 Pa, the carbonized layer was grown by the epitaxial mechanism. The crystal axis of the carbonized layer grown under this pressure was confirmed to coincide with the crystal axis of the Si substrate from the results of the selected area electron diffraction (SAED) analysis. Under the relatively high pressure condition of 7.8 × 10-2 Pa, the carbonized layer was grown by the diffusion mechanism. The result of the SAED pattern and the XTEM image indicated that this layer consisted of small grainy crystals and their crystal axes inclined against the growth direction. It was confirmed that the crystalline quality of the SiC film deposited on the carbonized layer grown by the epitaxial mechanism is better than that deposited on the layer grown by the diffusion mechanism.

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34

Kaneko, Satoru, Kensuke Akiyama, Takeshi Ito, Yasuo Hirabayashi, Hiroshi Funakubo, and Mamoru Yoshimoto. "In-Plane Rotated Crystal Structure in Continuous Growth of Bismuth Cuprate Superconducting Film." Solid State Phenomena 139 (April 2008): 53–58. http://dx.doi.org/10.4028/www.scientific.net/ssp.139.53.

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Bismuth cuprate superconductor has a unique structure called a structural modulation (supercell, SC) consisting of modulated several unit cells. Strain induced by multilayered structure increases the intensity of SC modulation, while an oxygen deficient sample shows expansion of SC size. In this study, as opposed to the multilayer strain, by preparing samples with thick film thicknesses the effect of strain on crystal structure was investigated including SC structure. Epitaxial growth was verified by x-ray diffraction, and the thicker film showed other epitaxial phase rotated 32° around the surface normal with respect to the initial epitaxial phase. The SC size estimated by x-ray reciprocal space mapping was double the size of the initial epitaxial phase. Interestingly, the initial epitaxial phase became a dominant structure after further deposition. In order to evaluate the different SC size and SC modulation, a new index related with an incline of the modulation vector was proposed.

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Qadri, Syed N., Woohong Kim, Shyam Bayya, Brandon Shaw, Syed B. Qadri, Joseph Kolis, Bradley Stadelman, and Jasbinder Sanghera. "Epitaxial Growth of Single Crystal YAG for Optical Devices." Coatings 11, no. 6 (May 27, 2021): 644. http://dx.doi.org/10.3390/coatings11060644.

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We report the latest progress on fabrication of rare earth doped single crystal yttrium aluminum garnet (YAG) core/undoped YAG cladded fibers. Rare-earth doped single crystal core fibers were grown with laser heated pedestal growth methods. In a second step, epitaxial methods were used to grow a single crystalline undoped YAG cladding onto the core fiber. Hydrothermal and liquid phase epitaxy methods utilize the core doped fiber as the seed. X-ray diffraction of cladding reveals an equilibrium (110) morphology. Energy-dispersive X-ray spectroscopy analysis shows there is minimal diffusion of rare-earth dopants into the cladding structure. The use of scandium doping is shown to substitute at the Al3+ site, thereby allowing an additional tunability of refractive index of core structure material besides conventional Y3+ site dopants. The use of these epitaxial growth methods enables material compatibility, tuning of refractive index, and conformal growth of cladding structures onto core fibers for optical devices.

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NECHACHE, R., C. HARNAGEA, A. RUEDIGER, F. ROSEI, and A. PIGNOLET. "EFFECT OF EPITAXIAL STRAIN ON THE STRUCTURAL AND FERROELECTRIC PROPERTIES OF Bi2FeCrO6 THIN FILMS." Functional Materials Letters 03, no. 01 (March 2010): 83–88. http://dx.doi.org/10.1142/s1793604710000981.

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Bi 2 FeCrO 6 thin films were epitaxially grown by pulsed laser deposition on (100)-oriented LaAlO 3, ( LaAlO 3)0.3( Sr 2 LaTaO 6)0.7 and SrTiO 3 single crystalline substrates with and without epitaxial CaRuO 3 buffered layer. The in-plane compressive strain induces monoclinic distortion of the Bi 2 FeCrO 6 lattice cell. The strain originates from lattice mismatch between CaRuO 3 and single crystal substrates. The similar crystal structure of the substrate and the layer lead to coherent epitaxial growth of the heterostructures and avoid strain relaxation in particular for BFCO films deposited on LaAlO 3 substrates. The ferroelectric character is demonstrated for all grown BFCO films. The residual in-plane strain weakly affects the effective piezoelectric coefficient of BFCO layers.

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OHTA, HIROMICHI, MASAHIRO ORITA, MASAHIRO HIRANO, KAZUSHIGE UEDA, and HIDEO HOSONO. "EPITAXIAL GROWTH OF TRANSPARENT CONDUCTIVE OXIDES." International Journal of Modern Physics B 16, no. 01n02 (January 20, 2002): 173–80. http://dx.doi.org/10.1142/s0217979202009615.

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Transparent conductive oxides of ITO , ZnO , β- Ga 2 O 3, and CuGaO 2 and SrCu 2 O 2 were grown on single crystal substrates of α- Al 2 O 3 and YSZ by pulsed-laser deposition, and their crystallinity was evaluated by using high-resolution X-ray diffraction and electron microscope. Heteroepitaxial growth was observed in spite of relatively large lattice mismatches between film and substrate. A few disordered layers were generated automatically at film/substrate boundary, played buffer layer to suppress propagation of edge dislocations.

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38

Ng, Man Fai, and Michael J. Cima. "Heteroepitaxial growth of lanthanum aluminate films derived from mixed metal nitrates." Journal of Materials Research 12, no. 5 (May 1997): 1306–14. http://dx.doi.org/10.1557/jmr.1997.0179.

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Epitaxial lanthanum aluminate (LaAlO3) thin films were deposited on single-crystal substrates by pyrolysis of spin-on mixed nitrate precursors. The films are epitaxial without any second phase. TEM micrographs show that all of these films have pores with sizes ranging from 5 to 30 nm. Grain boundaries are not observed. Selected area diffraction shows that the films are single-crystal-like, despite the porosity. All the films are smooth and crack-free. The precursors first decompose into an amorphous mixture. Heterogeneous nucleation occurs on the lattice-matched, single-crystal substrate surface. The epitaxial films grow upward and consume the amorphous regions. The crystallization temperature of LaAlO3 is lower for thin films than for bulk samples due to nucleation on the substrate. The crystallization of LaAlO3 does not exhibit linear growth kinetics. The Johnson–Mehl–Avrami exponent of growth is between 1.4 and 1.5. This deviation from the linear growth model (n = 1) can be attributed to continuous nucleation on the substrate/film interface.

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KARLSSON, LISA S., MAGNUS W. LARSSON, JAN-OLLE MALM, L. REINE WALLENBERG, KIMBERLY A. DICK, KNUT DEPPERT, WERNER SEIFERT, and LARS SAMUELSON. "CRYSTAL STRUCTURE OF BRANCHED EPITAXIAL III–V NANOTREES." Nano 01, no. 02 (September 2006): 139–51. http://dx.doi.org/10.1142/s1793292006000203.

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In this review we discuss the morphology and crystal structure of branched epitaxial III–V semiconductor structures, so called nanotrees, based on our own work with GaP , InAs and GaP/InP . These structures are formed by epitaxial growth in a step-wise procedure where each level can be individually controlled in terms of diameter, length and composition. Poly-typism is commonly observed for III–Vs with zinc blende, wurtzite or combinations thereof as the resulting crystal structure. Here we review GaP as an example of zinc blende and InAs of wurtzite type of growth in terms of nanotrees with two to three levels of growth. Included are also previously unpublished results on the growth of GaP/InP nanotrees to demonstrate effects of heteroepitaxial growth with substantial mismatch. For these structures a topotaxial growth behavior was observed with InP wires crawling along or spiraling around the GaP nanowires acting as a free-standing substrates.

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Sugishita, S., A. Shoji, Yoshihiko Mukai, Taro Nishiguchi, K. Michikami, Toshiyuki Isshiki, Satoru Ohshima, and Shigehiro Nishino. "Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method." Materials Science Forum 483-485 (May 2005): 177–80. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.177.

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Lateral epitaxial overgrowth (LEO) is known as method of defects reduction for GaN. LEO is expected to reduce crystal defects on hetero-epitaxial growth of 3C-SiC. (100) Si substrate patterned with SiO2 mask was used as the substrate. Before CVD process, V shape crater was made on Si surface by HCl etching. And growth condition of CVD was optimized. Single crystal of 3C-SiC was grown laterally on SiO2 layer. Cross-sectional transmission electron microscopic observation indicated that crystal quality of LEO region was single and no defect crystal.

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Kreiliger, Thomas, Marco Mauceri, Marco Puglisi, Fulvio Mancarella, Francesco La Via, Danilo Crippa, Wlodek Kaplan, et al. "3C-SiC Epitaxy on Deeply Patterned Si(111) Substrates." Materials Science Forum 858 (May 2016): 151–54. http://dx.doi.org/10.4028/www.scientific.net/msf.858.151.

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The growth morphology of epitaxial 3C-SiC crystals grown on hexagonal pillars deeply etched into Si (111) substrates is presented. Different growth velocities of side facets let the top crystal facet evolve from hexagonal towards triangular shape during growth. The lateral size and separation between Si pillars determine the onset of fusion between neighboring crystals during growth at a height tailoring of which is crucial to reduce the stacking fault (SF) density of the coalesced surface. Intermediate partial fusion of neighboring crystals is shown as well as a surface of fully coalesced crystals.

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McGrath, R., H. R. Sharma, J. A. Smerdon, and J. Ledieu. "The memory of surfaces: epitaxial growth on quasi-crystals." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 370, no. 1969 (June 28, 2012): 2930–48. http://dx.doi.org/10.1098/rsta.2011.0220.

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If crystal structures can be viewed as repositories of information, then crystal surfaces offer a pathway by which this information can be used to grow new structures through the process of epitaxy. The information transfer process is one of self-organization, and the kinetic and energetic factors influencing this are complex. They include the relative strengths of the adsorbate–adsorbate and adsorbate–substrate interactions, the flux of incoming species and the temperature of the system. In this brief review, we explore how the interplay of these factors influences the degree to which the epitaxial structures retain the ‘memory’ of the template, illustrating the discussion with examples from epitaxy on quasi-crystal surfaces.

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Huong, Pham V., Stéphanie Bouchet, and Jean-Claude Launay. "Cristal-growth dynamics of n-doped gaAs." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1544–45. http://dx.doi.org/10.1017/s0424820100132352.

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Microstructure of epitaxial layers of doped GaAs and its crystal growth dynamics on single crystal GaAs substrate were studied by Raman microspectroscopy with a Dilor OMARS instrument equipped with a 1024 photodiode multichannel detector and a ion-argon laser Spectra-Physics emitting at 514.5 nm.The spatial resolution of this technique, less than 1 μm2, allows the recording of Raman spectra at several spots in function of thickness, from the substrate to the outer deposit, including areas around the interface (Fig.l).The high anisotropy of the LO and TO Raman bands is indicative of the orientation of the epitaxial layer as well as of the structural modification in the deposit and in the substrate at the interface.With Sn doped, the epitaxial layer also presents plasmon in Raman scattering. This fact is already very well known, but we additionally observed that its frequency increases with the thickness of the deposit. For a sample with electron density 1020 cm-3, the plasmon L+ appears at 930 and 790 cm-1 near the outer surface.

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Wieser, Penny E., Zoja Vukmanovic, Rüdiger Kilian, Emilie Ringe, Marian B. Holness, John Maclennan, and Marie Edmonds. "To sink, swim, twin, or nucleate: A critical appraisal of crystal aggregation processes." Geology 47, no. 10 (August 20, 2019): 948–52. http://dx.doi.org/10.1130/g46660.1.

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Abstract Crystal aggregates in igneous rocks have been variously ascribed to growth processes (e.g., twinning, heterogeneous nucleation, epitaxial growth, dendritic growth), or dynamical processes (e.g., synneusis, accumulation during settling). We tested these hypotheses by quantifying the relative orientation of adjacent crystals using electron backscatter diffraction. Both olivine aggregates from Kīlauea volcano (Hawaiʻi, USA) and chromite aggregates from the Bushveld Complex (South Africa) show diverse attachment geometries inconsistent with growth processes. Near-random attachments in chromite aggregates are consistent with accumulation by settling of individual crystals. Attachment geometries and prominent geochemical differences across grain boundaries in olivine aggregates are indicative of synneusis.

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Scheel, H. J., and F. Licci. "Crystal Growth of High Temperature Superconductors." MRS Bulletin 13, no. 10 (October 1988): 56–61. http://dx.doi.org/10.1557/s0883769400064204.

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The discovery of high temperature superconductivity (HTSC) in oxide compounds has confronted materials scientists with many challenging problems. These include the preparation of ceramic samples with critical current density of about 106 A/cm2 at 77 K and sufficient mechanical strength for large-scale electrotechnical and magnetic applications and the preparation of epitaxial thin films of high structural perfection for electronic devices.The main interest in the growth of single crystals is for the study of physical phenomena, which will help achieve a theoretical understanding of HTSC. Theorists still do not agree on the fundamental mechanisms of HTSC, and there is a need for good data on relatively defect-free materials in order to test the many models. In addition, the study of the role of defects like twins, grain boundaries, and dislocations in single crystals is important for understanding such parameters as the critical current density. The study of HTSC with single crystals is also expected to be helpful for finding optimum materials for the various applications and hopefully achieving higher values of the superconducting transition temperature Tc than the current maximum of about 125 K. It seems unlikely at present that single crystals will be used in commercial devices, but this possibility cannot be ruled out as crystal size and quality improve.

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Lin, Zhaoyang, Anxiang Yin, Jun Mao, Yi Xia, Nicholas Kempf, Qiyuan He, Yiliu Wang, et al. "Scalable solution-phase epitaxial growth of symmetry-mismatched heterostructures on two-dimensional crystal soft template." Science Advances 2, no. 10 (October 2016): e1600993. http://dx.doi.org/10.1126/sciadv.1600993.

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Epitaxial heterostructures with precisely controlled composition and electronic modulation are of central importance for electronics, optoelectronics, thermoelectrics, and catalysis. In general, epitaxial material growth requires identical or nearly identical crystal structures with small misfit in lattice symmetry and parameters and is typically achieved by vapor-phase depositions in vacuum. We report a scalable solution-phase growth of symmetry-mismatched PbSe/Bi2Se3 epitaxial heterostructures by using two-dimensional (2D) Bi2Se3 nanoplates as soft templates. The dangling bond–free surface of 2D Bi2Se3 nanoplates guides the growth of PbSe crystal without requiring a one-to-one match in the atomic structure, which exerts minimal restriction on the epitaxial layer. With a layered structure and weak van der Waals interlayer interaction, the interface layer in the 2D Bi2Se3 nanoplates can deform to accommodate incoming layer, thus functioning as a soft template for symmetry-mismatched epitaxial growth of cubic PbSe crystal on rhombohedral Bi2Se3 nanoplates. We show that a solution chemistry approach can be readily used for the synthesis of gram-scale PbSe/Bi2Se3 epitaxial heterostructures, in which the square PbSe (001) layer forms on the trigonal/hexagonal (0001) plane of Bi2Se3 nanoplates. We further show that the resulted PbSe/Bi2Se3 heterostructures can be readily processed into bulk pellet with considerably suppressed thermal conductivity (0.30 W/m·K at room temperature) while retaining respectable electrical conductivity, together delivering a thermoelectric figure of merit ZT three times higher than that of the pristine Bi2Se3 nanoplates at 575 K. Our study demonstrates a unique epitaxy mode enabled by the 2D nanocrystal soft template via an affordable and scalable solution chemistry approach. It opens up new opportunities for the creation of diverse epitaxial heterostructures with highly disparate structures and functions.

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Wang, Shaoping, Aneta Kopec, and Andrew G. Timmerman. "A Novel Technique for Growth of Lithium-free ZnO Single Crystals." MRS Proceedings 1538 (2013): 405–10. http://dx.doi.org/10.1557/opl.2013.587.

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ABSTRACTA ZnO single crystal is a native substrate for epitaxial growth of high-quality thin films of ZnO-based Group II-oxides (e.g. ZnO, ZnMgO, ZnCdO) for variety of devices, such as UV and visible-light emitting diodes (LEDs), UV laser diodes and solar-blind UV detectors. Currently, commercially available ZnO single crystal wafers are produced using a hydrothermal technique. The main drawback of hydrothermal growth technique is that the ZnO crystals contain large amounts of alkaline metals, such as Li and K. These alkaline metals are electrically active and hence can be detrimental to device performances. In this paper, results from a recently developed novel growth technique for ZnO single crystal boules are presented. Lithium-free ZnO single crystal boules of up to 1 inch in diameter was demonstrated using the novel technique. Results from crystal growth and materials characterization will be discussed.

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Okamoto, Koichiro, Shigeru Inoue, Takayuki Nakano, Tae-Won Kim, Masaharu Oshima, and Hiroshi Fujioka. "Epitaxial growth of AlN on single crystal Mo substrates." Thin Solid Films 516, no. 15 (June 2008): 4809–12. http://dx.doi.org/10.1016/j.tsf.2007.08.122.

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Hoshi, Hajime, Shaoli Fang, and Yusei Maruyama. "Epitaxial growth of lead phthalocyanine film on KI crystal." Journal of Applied Physics 73, no. 6 (March 15, 1993): 3111–13. http://dx.doi.org/10.1063/1.353000.

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Ignatiev, A. "EPITAXIAL THIN-FILM CRYSTAL GROWTH IN SPACE ULTRA-VACUUM." Advanced Materials and Manufacturing Processes 3, no. 4 (January 1988): 599–615. http://dx.doi.org/10.1080/10426918808953220.

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