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Journal articles on the topic 'Epitaxial Deposition'

Author: Grafiati

Published: 6 September 2023

Last updated: 25 July 2025

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1

Wang, Wenliang, Yulin Zheng, Yuan Li, et al. "Control of interfacial reactions for the growth of high-quality AlN epitaxial films on Cu(111) substrates." CrystEngComm 19, no. 48 (2017): 7307–15. http://dx.doi.org/10.1039/c7ce01803g.

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High-quality AlN epitaxial films have been epitaxially grown on Cu(111) substrates by pulsed laser deposition (PLD) through effectively controlling the interfacial reactions between AlN epitaxial films and Cu substrates.

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2

Miller, Dean J., Jeffrey D. Hettinger, Ronald P. Chiarello, and Hyung K. Kim. "Epitaxial growth of Cu2O films on MgO by sputtering." Journal of Materials Research 7, no. 10 (1992): 2828–32. http://dx.doi.org/10.1557/jmr.1992.2828.

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The epitaxial growth of Cu2O films is of significant interest for the unique potential they offer in the development of multilayer devices and superlattices. While fundamental studies may be carried out on epitaxial films prepared by any technique, the growth of artificially layered superlattices requires that films grow epitaxially during deposition. The present study examined the growth of Cu2O on MgO substrates directly during deposition by sputtering. Although epitaxial thin films of Cu2O could be produced, a mosaic structure was observed. The structure of the film may be related to the gr

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3

Duan, Chun Yan, Bin Ai, Jian Jun Lai, Chao Liu, You Jun Deng, and Hui Shen. "APCVD Deposition of Si Film on SiO₂ Patterned Si (111) Substrates for Solar Cells." Advanced Materials Research 295-297 (July 2011): 1211–16. http://dx.doi.org/10.4028/www.scientific.net/amr.295-297.1211.

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We have investigated the deposition of silicon films on SiO2 patterned Si(111) substrates by atmospheric pressure chemical vapor deposition (APCVD) under standard condition. Oxidized silicon wafers with different sizes of circular and striated patterns were used as substrates for deposition of 35 μm silicon films. The influence of surface morphologies of substrates on epitaxial Si films has been discussed. The crystalline structures of the epitaxial Si films rely on the prepatterned substrates. Triangular prism-shaped grains have been obtained after depositing silicon film on substrates with c

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4

M C Ávila, Renan, Roney C da Silva, and Rogério J Prado. "Preparation of epitaxial BiFeO3 thin films on Si(001) substrates by pulsed electron deposition." Physics & Astronomy International Journal 7, no. 2 (2023): 77–81. http://dx.doi.org/10.15406/paij.202307.00288.

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To achieve the epitaxial thin films deposition, it is necessary to use properly oriented substrates, with or without buffer layers, matching the lattice parameters of the epitaxial thin film we want to grow. In this work, the deposition of epitaxial Bi2SiO5(200) and BiFeO3(001) thin films on Si(001) substrates by pulsed electron deposition (PED) technique is reported without special substrate preparation. The deposition of epitaxial BSO(200) and T-BFO(001) directly onto Si(001) substrates during a single target deposition process is relevant and presents enormous potential to reduce costs and

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5

Wijaranakula, W., P. M. Burke, L. Forbes, and J. H. Matlock. "Effect of pre- and postepitaxial deposition annealing on oxygen precipitation in silicon." Journal of Materials Research 1, no. 5 (1986): 698–704. http://dx.doi.org/10.1557/jmr.1986.0698.

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Substrate material used for fabrication of P/P + epitaxial silicon wafers was preannealed at 650 °C in nitrogen ambient prior to the epitaxial deposition process for various times up to 300 min. The substrate material originated from a characterized crystal ingot. The results show that annealing before epitaxial deposition can preserve oxide precipitate nuclei from dissolution during the epitaxial deposition process. Additional postepitaxial annealing at 750 °C further enhances the growth of bulk defects.

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6

Chung, Jun Ki, Won Jeong Kim, Sung Gap Lee, and Cheol Jin Kim. "Growth and Characterization of BaZrO₃ Buffer Layer for Textured YBCO Thin Films Growth on MgO (00l) Substrate." Key Engineering Materials 336-338 (April 2007): 715–18. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.715.

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Superconducting YBa2Cu3O7-δ(YBCO) films were grown on MgO single crystalline substrates using a BaZrO3 (BZO) buffer layer deposited by a pulsed laser deposition (PLD). Deposition condition has been optimized to obtain good epitaxial BZO film followed by deposition of YBCO superconducting films. The crystallinity and microstructure of epitaxial YBCO/ BZO/ MgO (00l) films were investigated by a two-dimensional x-ray diffraction and a field emission scanning electron microscope. The in-plane (φ-scan) measurements for the BZO films (200 ~ 500 nm thick) grown on MgO substrates revealed a narrow ful

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7

Zhang, Jiming, Gregory T. Stauf, Robin Gardiner, Peter Van Buskirk, and John Steinbeck. "Single molecular precursor metal-organic chemical vapor deposition of MgAl2O4 thin films." Journal of Materials Research 9, no. 6 (1994): 1333–36. http://dx.doi.org/10.1557/jmr.1994.1333.

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MgAl2O4 films have been grown epitaxially on both Si(100) and MgO(100) by a novel single source metal-organic chemical vapor deposition (MOCVD) process. A single molecular source reagent [magnesium dialuminum isopropoxide, MgAl2(OC3H7)8] having the desired Mg: Al ratio was dissolved in a liquid solution and flash-vaporized into the reactor. Both thermal and plasma-enhanced MOCVD were used to grow epitaxial MgAl2O4 thin films. The Mg: Al ratio in the deposited films was the same as that of the starting compound (Mg: Al = 1:2) over a wide range of deposition conditions. The deposition temperatur

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8

Pedersen, Henrik. "(Invited) Atomic Layer Deposition as the Enabler for the Meta Stable Semiconductor InN and Its Alloys." ECS Meeting Abstracts MA2023-02, no. 32 (2023): 1569. http://dx.doi.org/10.1149/ma2023-02321569mtgabs.

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Indium nitride (InN) is highly interesting for high-frequency and high-speed electronics given the remarkably high electron mobility in InN. The development of InN based electronics is hampered by the difficulty in depositing high quality thin films. The InN crystal breaks down to indium metal and nitrogen gas at about 500 °C which limits the deposition temperature, making conventional chemical vapor deposition (CVD) poorly suited for InN. Atomic Layer Deposition (ALD) is a low temperature, time-resolved form of CVD where the precursor gases are pulsed sequentially, separated by inert gas. Thi

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9

Duan, Ying Wen. "Epitaxial Pd-Doped LaFeO₃ Films Grown on (100) SrTiO₃ by Pulsed Laser Deposition." Advanced Materials Research 936 (June 2014): 282–86. http://dx.doi.org/10.4028/www.scientific.net/amr.936.282.

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Single-crystalline, epitaxial LaFeO3 films with 5 at. % substitution of Pd on the Fe site are grown on (100) SrTiO3 substrate by pulsed-laser deposition technique. The epitaxial orientation relationships are (110)[001]LFPO||(100)[001]STO. X-ray diffraction and transmission electron microscopy reveal that the LFPO films have high structural quality and an atomically sharp LFPO/STO interface. After reduction treatments of as-grown LFPO films, very little Pd escaped the LFPO lattice onto the film surface, the formed Pd (100) particles are oriented epitaxially, and parallel to the LFPO films surfa

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10

Lin, Yunhao, Meijuan Yang, Wenliang Wang, Zhiting Lin, and Guoqiang Li. "Quality-enhanced GaN epitaxial films on Si(111) substrates by in situ deposition of SiN on a three-dimensional GaN template." RSC Advances 6, no. 88 (2016): 84794–800. http://dx.doi.org/10.1039/c6ra16842f.

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11

Li, Chunling, Yanwei Liu, Yueliang Zhou, Zhenghao Chen, Hong Chen, and Yong Zhu. "Heteroepitaxial Growth of c-Axis-Oriented BaTiO3:Ce/YBa2Cu3O7-x Bilayer Structure on SrTiO3(100) by Pulsed Laser Deposition." Modern Physics Letters B 11, no. 02n03 (1997): 73–79. http://dx.doi.org/10.1142/s0217984997000116.

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c-axis-oriented BaTiO 3 :Ce/YBa 2 Cu 3 O 7-x bilayers have been epitaxially grown on the SrTiO 3(100) substrates by pulsed laser deposition. The crystal structure and epitaxial orientation of the films have been analyzed by the XRD θ/2θ, ω and ϕ scans, and the results indicate that the bilayer thin films have high degree of c-axis-oriented epitaxial crystalline structure. The surface morphology of the thin films was revealed by scanning electron microscopy (SEM). The ferroelectricity of the BaTiO 3 :Ce thin films was verified by the P-E hysteresis loop.

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12

Chrysler, M., J. C. Jiang, G. Lorkowski, E. I. Meletis, and J. H. Ngai. "Deposition-last lithographically defined epitaxial complex oxide devices on Si(100)." Journal of Vacuum Science & Technology A 40, no. 5 (2022): 052701. http://dx.doi.org/10.1116/6.0001939.

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The epitaxial growth of SrTiO3 on Si(100) substrates that have been lithographically patterned to realize deposition-last, lithographically defined oxide devices on Si is explored. In contrast to traditional deposition-last techniques which create a physical hard mask on top of the substrate prior to epitaxial growth, a pseudomask is instead created by texturing the Si substrate surface itself. The Si is textured through a combination of reactive ion etching and wet-etching using a tetramethylammonium hydroxide solution. Desorbing the native SiOx at high temperatures prior to epitaxial growth

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13

LIANG, M. H., X. XIE, and S. LI. "COMPUTER SIMULATION OF EPITAXIAL GROWTH OF SILICON ON Si (001) SURFACE." International Journal of Modern Physics B 16, no. 01n02 (2002): 227–32. http://dx.doi.org/10.1142/s0217979202009688.

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Epitaxial growth of silicon on Si (001) surface has been studied with interatomic potential based molecular dynamics simulation method. Three silicon interatomic potentials developed separately by Stillinger-Weber, Tersoff, and Bazant-Kaxiras were used. Energetic beam of 8 eV, substrate temperature of 500K and deposition rate of 1.15 ps/atom were used as the deposition conditions. Morphologies of the growth were obtained and densities in the growth direction analyzed. Epitaxial growth under the deposition conditions imposed was found possible only using the Stillinger-Weber potential. Disorder

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14

Arata, Yuta, Hiroyuki Nishinaka, Kazuki Shimazoe, and Masahiro Yoshimoto. "Epitaxial Growth of Bendable Cubic NiO and In2O3 Thin Films on Synthetic Mica for p- and n-type Wide-Bandgap Semiconductor Oxides." MRS Advances 5, no. 31-32 (2020): 1671–79. http://dx.doi.org/10.1557/adv.2020.85.

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AbstractBendable p-type NiO and n-type In2O3 thin films were epitaxially grown on synthetic mica using mist chemical vapor deposition. It was found that at a growth temperature of 400 °C, epitaxially grown cubic (111) NiO thin films developed twin rotational domains, and the epitaxial relationship between each domain and the substrate was (111) NiO [1-10] or [10-1] || (001) synthetic mica [100]. In the visible light region, the epitaxial NiO thin films showed high transparencies, and their cut-offs appeared in the UV region. Additionally, at a growth temperature of 500 °C, cubic (111) In2O3 th

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15

Jiménez-Sáez, J. C., A. M. C. Pérez-Martín, and J. J. Jiménez-Rodríguez. "Influence of Energy and Temperature in Cluster Coalescence Induced by Deposition." Advances in Condensed Matter Physics 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/812463.

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Coalescence induced by deposition of different Cu clusters on an epitaxial Co cluster supported on a Cu(001) substrate is studied by constant-temperature molecular dynamics simulations. The degree of epitaxy of the final system increases with increasing separation between the centres of mass of the projectile and target clusters during the collision. Structure, roughness, and epitaxial order of the supported cluster also influence the degree of epitaxy. The effect of energy and temperature is determinant on the epitaxial condition of the coalesced cluster, especially both factors modify the ge

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16

Alouach, H., and G. J. Mankey. "Epitaxial growth of copper nanowire arrays grown on H-terminated Si(110) using glancing-angle deposition." Journal of Materials Research 19, no. 12 (2004): 3620–25. http://dx.doi.org/10.1557/jmr.2004.0465.

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We report the growth of epitaxial nanowire arrays using the technique of glancing- angle deposition with substrate rotation. Epitaxial copper nanowire arrays were deposited on H-terminated Si(110) using electron beam evaporation. The nanowire arrays were characterized by x-ray diffraction, atomic force microscopy, and scanning electron microscopy. Individual nanowires were confirmed to be single crystalline by examination with transmission electron microscopy. The epitaxial growth involves twin formation with the epitaxial orientation relationships: Cu(111)//Si(110) with Cu[110]//Si[001] and C

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17

Komatsu, Keiji, Pineda Marulanda David Alonso, Nozomi Kobayashi, et al. "Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition." Journal of Materials Science Research 5, no. 2 (2016): 56. http://dx.doi.org/10.5539/jmsr.v5n2p56.

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<p class="1Body">MgO films were epitaxially grown on single crystal MgO substrates by atmospheric-pressure chemical vapor deposition (CVD). Reciprocal lattice mappings and X-ray reflection pole figures were used to evaluate the crystal quality of the synthesized films and their epitaxial relation to their respective substrates. The X-ray diffraction profiles indicated that the substrates were oriented out-of-plane during MgO crystal growth. Subsequent pole figure measurements showed how all the MgO films retained the substrate in-plane orientations by expressing the same pole arrangement

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18

Arkles, Barry, Youlin Pan, Fernando Jove, Jonathan Goff, and Alain Kaloyeros. "Synthesis and Exploratory Deposition Studies of Isotetrasilane and Reactive Intermediates for Epitaxial Silicon." Inorganic Chemistry 58 (February 20, 2019): 3050–57. https://doi.org/10.1021/acs.inorgchem.8b02761.

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A synthetic method is presented for the production of isotetrasilane, a higher order perhydridosilane, with the purity and volume necessary for use in extensive studies of the chemical vapor deposition (CVD) of epitaxial silicon (e-Si) thin films. The chemical characteristics, thermodynamic properties, and epitaxial film growth of isotetrasilane are compared with those of other perhydridosilanes. A film-growth mechanism distinct from linear perhydridosilanes H(SiH2) nH, where n ≤ 4, is reported. Preliminary findings are summarized for CVD of both unstrained e-Si and strained e-Si doped with

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19

Tamaki, Jun, Gregory K. L. Goh, and Fred F. Lange. "Novel epitaxial growth of barium titanate thin films by electrodeposition." Journal of Materials Research 15, no. 12 (2000): 2583–86. http://dx.doi.org/10.1557/jmr.2000.0368.

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Electrodeposition was used to grow epitaxially BaTiO3 thin films on SrTiO3 single-crystal substrates with La0.7Sr0.3MnO3 (LSMO) conducting buffer layers. The epitaxial films appeared to consist of very small (ø10 nm) particles. The film completely covered the substrate when the reaction was performed at temperatures between 60 and 90 °C with LSMO potentials of –0.5 to –1.0 V against a Pt counter-electrode. It appeared that an electrophoretic force, acting on BaTiO3 nuclei within the solution, facilitated the deposition of the film.

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20

Lee, Sang B., and Taegwen Hwangbo. "Epitaxial growth with impurity dimer deposition." Physica A: Statistical Mechanics and its Applications 337, no. 3-4 (2004): 470–80. http://dx.doi.org/10.1016/j.physa.2004.02.003.

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21

Mieno, Fumitake, Atsuhiro Tukune, Hiroshi Miyata, Atsuo Shimizu, and Yuji Furumura. "Spontaneous Polysilicon and Epitaxial Silicon Deposition." Journal of The Electrochemical Society 142, no. 5 (1995): 1590–94. http://dx.doi.org/10.1149/1.2048618.

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22

Veneroni, Alessandro, Fabrizio Omarini, Davide Moscatelli, et al. "Modeling of epitaxial silicon carbide deposition." Journal of Crystal Growth 275, no. 1-2 (2005): e295-e300. http://dx.doi.org/10.1016/j.jcrysgro.2004.10.104.

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23

Dahl-Hansen, Runar Plünnecke, Marit Stange, Tor Olav Sunde, and Alexander Ulyashin. "Rate-Dependent Evolution of Microstructure and Stress in Silicon Films Deposited by Electron Beam Evaporation." Coatings 14, no. 7 (2024): 808. http://dx.doi.org/10.3390/coatings14070808.

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Growing high-quality Si films at high rates with thicknesses ranging from the few nm- to µm-range while keeping the material consumption at a minimum is important for a wide range of Si-based technologies, spanning from batteries to sensors and solar cells. In this work, we elucidate the effects of electron beam deposition (e-beam) conditions on the growth of ~4 µm thick Si layers on bare and thermally oxidized (001)-oriented Si substrates. All depositions are performed from a stabilized and refillable melt of broken B-doped wafers and recollected using Si-shields during deposition for recycli

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24

Kizuka, T., and N. Tanaka. "Cross-sectional time-resolved high-resolution electron microscopy of epitaxial growth of Au on MgO." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 982–83. http://dx.doi.org/10.1017/s0424820100167378.

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Vapor phase epitaxial growth techniques are indispensable for production of thin film electric devices. Various structural analyses have been attempted to evaluate the epitaxial growth. Conventional transmission electron microscopy (CTEM) is a most useful method. In particular, it is known that a plan-view time-resolved CTEM of in-situ vacuum-deposition in a microscope can analyze each process of epitaxial growth. The nucleation in vacuum-deposition was also in-situ observed by a time-resolved high resolution electron microscopy (TRHREM). However many unresolved problems still remain in the st

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25

NECHACHE, R., C. HARNAGEA, A. RUEDIGER, F. ROSEI, and A. PIGNOLET. "EFFECT OF EPITAXIAL STRAIN ON THE STRUCTURAL AND FERROELECTRIC PROPERTIES OF Bi2FeCrO6 THIN FILMS." Functional Materials Letters 03, no. 01 (2010): 83–88. http://dx.doi.org/10.1142/s1793604710000981.

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Bi 2 FeCrO 6 thin films were epitaxially grown by pulsed laser deposition on (100)-oriented LaAlO 3, ( LaAlO 3)0.3( Sr 2 LaTaO 6)0.7 and SrTiO 3 single crystalline substrates with and without epitaxial CaRuO 3 buffered layer. The in-plane compressive strain induces monoclinic distortion of the Bi 2 FeCrO 6 lattice cell. The strain originates from lattice mismatch between CaRuO 3 and single crystal substrates. The similar crystal structure of the substrate and the layer lead to coherent epitaxial growth of the heterostructures and avoid strain relaxation in particular for BFCO films deposited o

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26

Ahn, Kun Ho, Sunggi Baik, and Sang Sub Kim. "Change of growth orientation in Pt films epitaxially grown on MgO(001) substrates by sputtering." Journal of Materials Research 17, no. 9 (2002): 2334–38. http://dx.doi.org/10.1557/jmr.2002.0342.

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A drastic change of the growth orientation in epitaxial Pt films grown by sputtering on MgO(001) was observed. At higher substrate temperatures, practically pure (001) epitaxial Pt films grow. On the other hand, epitaxial (111) Pt films grow at lower substrate temperatures. Interestingly, the gradual transition from (111) to (001) orientation occurs at lower temperatures when applied at a lower deposition rate. The degree of supersaturation in growth conditions is proposed as a key driver of the orientation change. When homogeneous nucleation occurs under a higher supersaturation, a large numb

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27

Ohnishi, T., B. T. Hang, X. Xu, M. Osada, and K. Takada. "Quality control of epitaxial LiCoO2 thin films grown by pulsed laser deposition." Journal of Materials Research 25, no. 10 (2010): 1886–89. http://dx.doi.org/10.1557/jmr.2010.0250.

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Thin films of c-axis-oriented LiCoO2 were epitaxially grown by pulsed laser deposition (PLD). The ablation laser conditions greatly affect the crystal quality of the epitaxial LiCoO2 thin films. In addition, high-quality LiCoO2 thin films were found to grow without any impurity phases under relatively low oxygen partial pressure, although high pressure had been often selected to suppress the formation of Co3O4 with a lower valence state as an impurity. This result clearly indicates that the ablation laser conditions are an essential growth parameter, and that composition control is indispensab

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28

Binh, Nguyen Thanh, Vu Thi Bich, and Y. Segawa. "INVESTIGATION OF ZnO NANO STRUCTURES FABRICATED ON AL2O3 SUBSTRACTES BY MOCVD." ASEAN Journal on Science and Technology for Development 24, no. 1&2 (2017): 171–76. http://dx.doi.org/10.29037/ajstd.204.

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High quality ZnO nanostructures were grown directly on sapphire subtracts by metal organic vapor deposition. By changing the growth conditions, the different nano structures (nanorods,nanotubes, nanowalls, nanonetworks) can be selectively. These nanostructures were all epitaxially grown and had the same epitaxial relationship with respect to the substrate. Mechanisms corresponding to different nanostructures were discussed. The nanostructures exhibited stable excitonic states at room temperature, and the emission due to exciton-exciton scattering was observed

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29

Wang, Wenliang, Yulin Zheng, Xiuye Zhang, Yuan Li, Zhenya Lu, and Guoqiang Li. "Design and epitaxial growth of quality-enhanced crack-free GaN films on AlN/Al heterostructures and their nucleation mechanism." CrystEngComm 20, no. 5 (2018): 597–607. http://dx.doi.org/10.1039/c7ce01995e.

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The epitaxial structures of GaN films grown on AlN/Al heterostructures by pulsed laser deposition (PLD) are designed with and without an amorphous AlN layer, and quality-enhanced crack-free GaN epitaxial films are obtained.

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30

Bai, P., G.-R. Yang, L. You, T.-M. Lu, and D. B. Knorr. "Room-temperature epitaxy of Cu on Si(111) using partially ionized beam deposition." Journal of Materials Research 5, no. 5 (1990): 989–97. http://dx.doi.org/10.1557/jmr.1990.0989.

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The epitaxial growth of Cu on Si(111) substrate at room temperature was achieved using the Partially Ionized Beam (PIB) deposition technique in a conventional (10−4 Pa) vacuum without prior in situ cleaning of the substrate or post-annealing of the film. The beam contained ≍2% of Cu self-ions, and a bias of 0 to 4.2 kV was applied to the substrate during deposition. X-ray diffraction studies showed the existence of a twin structure in the epitaxial Cu layer deposited at 1 kV. A mechanism of epitaxial growth of Cu(111) on Si(111) substrate via an η″—Cu3Si intermediate phase is proposed. Based o

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31

Tsuchiya, Tetsuo, Kais Daoudi, Tomohiko Nakajima, and Toshiya Kumagai. "Epitaxial Growth of LSMO Film Prepared by Excimer Laser-Assisted Metal Organic Deposition (ELAMOD)." Key Engineering Materials 388 (September 2008): 133–36. http://dx.doi.org/10.4028/www.scientific.net/kem.388.133.

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The La1-xAxMnO3 (A=Sr, Ca, Ba) film was prepared by excimaer laser-assisted metal organic deposition (ELAMOD). To understand the important controlling factor of the epitaxial growth using ELAMOD, the effects of the substrate temperature, substrate type, wavelength, and film thickness on the epitaxial growth were investigated. When the film thickness was 200nm with heating at 250°C, a polycrystalline LSMO film was formed on the LAO substrate. On the other hand, at 80nm, an epitaxial LSMO film was formed on the LAO substrate at 500°C. The epitaxial growth of the LSMO film was found to be depende

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32

Resel, Roland, Markus Koini, Jiri Novak, Steven Berkebile, Georg Koller, and Michael Ramsey. "Epitaxial Order Driven by Surface Corrugation: Quinquephenyl Crystals on a Cu(110)-(2×1)O Surface." Crystals 9, no. 7 (2019): 373. http://dx.doi.org/10.3390/cryst9070373.

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A 30 nm thick quinquephenyl (5P) film was grown by molecular beam deposition on a Cu(110)(2×1)O single crystal surface. The thin film morphology was studied by light microscopy and atomic force microscopy and the crystallographic structure of the thin film was investigated by X-ray diffraction methods. The 5P molecules crystallise epitaxially with (201)5P parallel to the substrate surface (110)Cu and with their long molecular axes parallel to [001]Cu. The observed epitaxial alignment cannot be explained by lattice matching calculations. Although a clear minimum in the lattice misfit exists, it

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33

Blaauw, C., C. Miner, B. Emmerstorfer, A. J. Springthorpe, and M. Gallant. "Metalorganic chemical-vapour-deposition growth and characterization of GaAs." Canadian Journal of Physics 63, no. 6 (1985): 664–69. http://dx.doi.org/10.1139/p85-102.

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GaAs epitaxial layers have been grown on semi-insulating GaAs substrates using the technique of metalorganic chemical-vapour deposition. The organometallic compounds trimethylgallium and trimethylgallium–trimethylarsenic adduct were used as source reagents for gallium, whereas arsine and trimethylarsenic were used as sources for arsenic. Photoluminescence measurements at 8 K indicated that carbon was present in the layers as the dominant background acceptor, in most cases, and to a lesser extent copper (Cu) and manganese (Mn) acceptors were also present. Secondary-ion mass spectroscopy (SIMS)

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Le, Ha-Linh Thi, Fatme Jardali, and Holger Vach. "Deposition of hydrogenated silicon clusters for efficient epitaxial growth." Physical Chemistry Chemical Physics 20, no. 23 (2018): 15626–34. http://dx.doi.org/10.1039/c8cp00764k.

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Epitaxial silicon thin films grown from the deposition of plasma-born hydrogenated silicon nanoparticles using plasma-enhanced chemical vapor deposition have widely been investigated due to their potential applications in photovoltaic and nanoelectronic device technologies. Here, molecular dynamics simulations are presented to predict the optimal deposition conditions.

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35

Yamada, Isao. "Effects of Ionized Cluster Beam Bombardment on Epitaxial Metal Film Deposition on Silicon Substrates." MRS Proceedings 128 (1988). http://dx.doi.org/10.1557/proc-128-113.

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ABSTRACTThe effects of ion beam bombardment during ionized cluster beam (ICB) deposition of metal films on Si(111) and Si(100) substrates have been discussed. In the case of Al deposition, films have been epitaxially deposited on Si(lll) and Si(100) substrates at near room temperature. On Si(111) substrates, nearly perfect Al single crystal films could be formed. On Si(100) substrates, Al bicrystals have been grown epitaxially. A remarkable fact concerning these results is that the epitaxial films could be formed at nearly room temperature and on a large lattice mismatch (25%) substrate surfac

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36

Ben Chroud, Mohamed, Maxim Korytov, Jean-Philippe Soulié, et al. "Epitaxial growth of magnetron sputtered NiAl onGe mediated by native GeOx." Journal of Physics D: Applied Physics, December 15, 2023. http://dx.doi.org/10.1088/1361-6463/ad164b.

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Abstract In this work, the growth of a magnetron sputtered NiAl film on Ge was investigated. Two growth parameters were varied: the deposition temperature and the presence of native GeOx. An epitaxial layer was obtained at a deposition temperature of 400℃ and without removal of the native GeOx prior to deposition. At this growth condition, Ni and Al diffused into the Ge forming an epitaxial germanide. This germanide is most likely the τ3 phase of the Ni-Al-Ge ternary system. The growth of the τ3 phase is enabled by the GeOx acting as a diffusion barrier for Al. The native GeOx was found to be

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37

Kawai, Masanori, Daisuke Kan, Seiichi Isojima, et al. "Deposition Rate Effect on Critical Thickness of BaTiO3 Epitaxial Thin Film Grown on SrTiO3 (001)." MRS Proceedings 1034 (2007). http://dx.doi.org/10.1557/proc-1034-k10-04.

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AbstractBaTiO3/SrTiO3(001) epitaxial thin films were prepared at various growth rates by pulsed laser deposition, and their heterostructures were evaluated by synchrotron x-ray diffraction measurements and cross-sectional scanning transmission electron microscopy observations. In a film grown at a low deposition rate (0.01 nm/s), misfit dislocations are found near the interface and a fully relaxed BaTiO3 thin film grows epitaxially on the substrate. On the other hand, a film grown at a high deposition rate (0.04 nm/s) consists of strained and relaxed BaTiO3 lattices. Our results showed that th

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38

Palmstrom, C. J., G. J. Galvin, S. A. Schwarz, B. C. De Cooman, and J. W. Mayer. "SOLID PHASE EPITAXIAL GROWTH OF Ge ON GaAs." MRS Proceedings 56 (1985). http://dx.doi.org/10.1557/proc-56-67.

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AbstractSolid phase epitaxial growth of electron beam evaporated Ge layers on unheated GaAs has been demonstrated. The amorphous Ge layers grow epitaxially on the GaAs surface during anneals at 400°C. A technique for growing these epitaxial layers without the need for in-situ heat treatment of the GaAs prior to Ge deposition is described.

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39

Lu, P., S. He, F. X. Li, and Q. X. Jia. "Epitaxial and Conductive RuO2 Thin Films Grown on MgO and LaAlO3 by MOCVD." MRS Proceedings 541 (1998). http://dx.doi.org/10.1557/proc-541-147.

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AbstractConductive RuO2 thin films have been grown epitaxially on (100) MgO and (100) LaAlO3 substrates by metal-organic chemical vapor deposition(MOCVD) at different temperatures. The microstructural properties of the RuO2 films have been studied using x-ray diffraction and scanning electron microscopy. Different growth and microstructure properties were observed for the films deposited on the two substrates. The films on MgO are epitaxial at deposition temperatures as low as 350°C, and consist of two variants with an orientation relationship given by (110) RuO2 /(100) MgO and [001] RuO2//[01

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40

Teplin, Charles W., Matthew Page, Eugene Iwaniczko, et al. "Roughness, impurities and strain in low-temperature epitaxial silicon films grown by tantalum filament hot-wire chemical vapor deposition." MRS Proceedings 910 (2006). http://dx.doi.org/10.1557/proc-0910-a15-01.

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AbstractWe grow epitaxial silicon films onto (100) silicon wafers from pure silane by hot-wire chemical vapor deposition (HWCVD). The films grow epitaxially for a thickness hepi before a Si:H cones nucleate and expand. We study the dependence of hepi on growth rate and the differences between Ta and W filaments. The surface morphology of thin but completely epitaxial films are studied in order to correlate the surface roughness during growth with the eventual epitaxial breakdown thickness. Surface roughness, strain and H at the wafer/film interface are not likely to cause the observed breakdow

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41

Hattori, Y., A. Mizoguchi, Y. Ogaki, and A. Nishimtjra. "Epitaxial Growth of Organic Nonlinear Optical Materials." MRS Proceedings 247 (1992). http://dx.doi.org/10.1557/proc-247-235.

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ABSTRACTAs an orientation control technique for organic materials, epitaxial growth on crystal substrates was studied for DBNA, a derivative of p-nitroani1 ine, and polydiacetylene(PDA)-3BCMU using Vacuum Deposition and Molecular Beam Epitaxy(MBE).The thin film of DBNA was epitaxially grown on a KCl(001) surface by Vacuum Deposition. Molecular orientation to the substrate (parallel or normal) was controlled by MBE. PDA-3BCMTJ thin films were prepared by UV light irradiation of DA-3BCMU(monomer) thin films which were epitaxially grown on a KCl(001) surface, x(3) values of this oriented thin fil

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42

Rulder, R. A., G. G. Fountain, S. V. Hattangady, J. B. Posthill, and R. J. Markunas. "Development of Remote Plasma Enhanced Ohemical Vapor Deposition Processes Through the use of in Vacuo Electron Diffraction and Electron Spectroscopy." MRS Proceedings 165 (1989). http://dx.doi.org/10.1557/proc-165-151.

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AbstractRemote plasma enhancecd chemical vapor deposition techniques have been developed for a wide variety of processes. These include SiO2, Si3N4, Si, Ge, GaN, GaAs, and a-Si:H depositions. This development has been enabled through the use of electron diffraction and electron spectroscopy techniques. These techniques have been used to qualify cleaning procedures prior to epitaxial or dielectric depositions. They have beeii used to qualify epitaxial deposition conditions by defining suitable.temperature and rate conditions. And, they have been used to evaluate cross-contamination issues. In s

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43

Lee, See-Hyung, T. W. Noh, and Jai-Hyung Lee. "Dependence of Electro-Optic Effects on the Orientations of Epitaxial LiNbO3 Films." MRS Proceedings 401 (1995). http://dx.doi.org/10.1557/proc-401-261.

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AbstractEpitaxial LiNbO3 films were grown on a-cut sapphire, i.e., α-A12O3(0112), substrates by pulsed laser deposition. It is found the oxygen pressure is an important deposition parameter to influence the orientations of the LiNbO3 films. At an oxygen pressure of 10−1 torr, LiNbO3(0001) film was grown epitaxially. And, at a low oxygen pressure (i.e., 5x10−4 torr), LiNbO3(1120) film was grown epitaxially. Due to the anisotropic electro-optic (EO) constants, these films with the different orientations display large differences in their EO properties: the epitaxial LiNb3(0001) film shows little

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44

Oberbeck, Lars, Thomas A. Wagner, and Ralf B. Bergmann. "Ion-Assisted Deposition of Silicon Epitaxial Films with High Deposition Rate Using Low Energy Silicon Ions." MRS Proceedings 609 (2000). http://dx.doi.org/10.1557/proc-609-a7.1.

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ABSTRACTIon-assisted deposition (IAD) enables low temperature (≥ 435°C), high-rate (≤ 0.5 μm/min) epitaxial growth of silicon films. Therefore, IAD is an interesting deposition technique for microelectronic devices and thin film solar cells. The Hall-mobility of monocrystalline epitaxial layers increases with deposition temperature Tdep and reaches values comparable to those of bulk Si at Tdep ≥ 540°C. Polycrystalline epitaxial layers exhibit inhomogeneous electrical properties, as shown by Light Beam Induced Current measurements. Recombination within the grains dominates over recombination at

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45

Martin Smith, Paul, S. Lombardo, M. J. Uttormark, Stephen J. Cook, and Michael O. Thompson. "Laser Assisted E-Beam Epitaxial Growth of Si/Ge Alloys on Si." MRS Proceedings 202 (1990). http://dx.doi.org/10.1557/proc-202-603.

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ABSTRACTA novel laser-assisted technique for e-beam epitaxial growth of GexSi1−x alloys on <100> Si has been investigated. During deposition, a XeCl excimer laser is used to either heat, or to melt and crystallize, the GexSi1−x continuously as the material is evaporated. This process of heating or melting and crystallizing can be continued until the desired film thickness is achieved. At incident laser energy densities which produce melt, the underlying crystalline seed ensures epitaxial growth during the subsequent solidification. Depositions of films up to 3 at.% Ge under this liquid r

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46

Nashimoto, K., D. K. Fork, F. A. Ponce, and T. H. Geballe. "Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition." MRS Proceedings 243 (1991). http://dx.doi.org/10.1557/proc-243-495.

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AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plan

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McEachernt, R. L., Dirk Laszig, and W. L. Brownt. "The Epitaxial Growth of Al on Hydrogen Terminated Si(100) Substrates with and Without Ion Bombardment." MRS Proceedings 260 (1992). http://dx.doi.org/10.1557/proc-260-953.

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ABSTRACTWe have demonstrated that aluminum can be grown epitaxially on H-terminated Si(100) substrates under modest vacuum conditions using thermal deposition. The effect of 1 keV to 4 keV ion bombardment during deposition was found to be either minimal or detrimental. Preliminary results from sputter-deposited Al films show very different behavior, with the films tending to relax from the epitaxial (110) texture to a (111) texture.

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48

Higuchi, Takamitsu, Koichi Morozumi, Setsuya Iwashita, Masaya Ishida, and Tatsuya Shimoda. "Fabrication of SrRuO3 Epitaxial Thin Films on YBa2Cu3Ox / CeO2 / YSZ - Buffered Si Substrates by Pulsed Laser Deposition." MRS Proceedings 786 (2003). http://dx.doi.org/10.1557/proc-786-e6.5.

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ABSTRACTPseudocubic SrRuO3 (100) epitaxial thin films were fabricated on Si (100) with a YBa2Cu3Ox / CeO2 / YSZ (yttria-stabilized-zirconia) triple buffer layer ∼ 14 nm thick by pulsed laser deposition (PLD). Reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) revealed that the first buffer layer of YSZ (100) was epitaxially grown on naturally oxidized Si (100) substrates with the process condition of PB (base pressure) = 1×10-Torr, PO2 (oxygen partial pressure) = 5×10- Torr, and Ts (substrate temperature) = 700 °C. Higher deposition rate of YSZ in the range of 0 ∼

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Chang, K., S. G. Thomas, T.-C. Lee, et al. "Epitaxial Realignment of In-Situ Doped Polycrystalline Silicon for Advanced BiCMOS Technologies." MRS Proceedings 587 (1999). http://dx.doi.org/10.1557/proc-587-o6.10.

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AbstractIndustrial feasibility of an in-situ-doped (ISD) polycrystalline Si process using chemical vapor deposition for advanced BiCMOS technologies is presented. ISD As-doped amorphous and polycrystalline Si layers have been deposited on Si substrates at 610°C and 660°C, respectively, with the deposition rate varying from 120 to 128Å /minute. Samples are compared on the basis of having been subjected to a substrate preclean prior to deposition using an HF solution and an in-situ H2 bake. TEM micrographs reveal the presence of a thin (10-15 Å) native oxide at the deposited layer/substrate inte

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50

"Electrochemical Atomic Layer Deposition (EC-ALD) Low Cost Synthesis of Engineered Materials a Short Review." Advances in Materials Science and Engineering 2, no. 1 (2018). http://dx.doi.org/10.33140/amse/02/01/11.

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Having mastered the technology of epitaxial deposition of crystalline thin films (i.e. homo and heteroepitaxy) on crystalline substrates has already been found providing better device designs with numerous advantages in the development of microelectronics devices and circuits. Consequently, mass-scale production of epitaxial thin films could successfully be developed and used in fabricating discrete devices and integrated circuits (ICs) using silicon/compound semiconductors commercially. Especially, realizing the hetero-epitaxial interfaces possessing two-dimensional electron/hole gas (2DEG/2D

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