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Journal articles on the topic 'Epitaxial emitters'

Author: Grafiati

Published: 3 June 2025

Last updated: 31 July 2025

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1

Smith, Logan, K. Elena Harbison, Benjamin T. Diroll, and Igor Fedin. "Acceleration of Near-IR Emission through Efficient Surface Passivation in Cd3P2 Quantum Dots." Materials 16, no. 19 (2023): 6346. http://dx.doi.org/10.3390/ma16196346.

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Fast near-IR (NIR) emitters are highly valuable in telecommunications and biological imaging. The most established NIR emitters are epitaxially grown InxGa1−xAs quantum dots (QDs), but epitaxial growth has several disadvantages. Colloidal synthesis is a viable alternative that produces a few NIR-emitting materials, but they suffer from long photoluminescence (PL) times. These long PL times are intrinsic in some NIR materials (PbS, PbSe) but are attributed to emission from bright trapped carrier states in others. We show that Cd3P2 QDs possess substantial trap emission with radiative times >

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Slyotov, M. M., O. M. Slyotov, H. V. Potsіluiko-Hryhoriak, M. P. Mazur, and Т. М. Mazur. "GaN based light emitters." Physics and Chemistry of Solid State 25, no. 2 (2024): 297–302. http://dx.doi.org/10.15330/pcss.25.2.297-302.

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The article discusses the preparation of epitaxial layers and GaN crystals, as well as the results of studies of their optical and luminescent properties. The parameters of the band structure of the resulting hexagonal modification materials ΔCR ≈ 10 meV and ΔSO ≈ 48 meV were determined. The mechanisms of the main recombination processes that determine the formation of radiation from undoped and Zn-doped materials have been established. The role of interband recombination and annihilation of excitons in the formation of radiation in the high-energy region and transitions of carriers through en

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Seifner, Michael S., Alain Dijkstra, Johannes Bernardi, et al. "Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters." ACS Nano 13, no. 7 (2019): 8047–54. http://dx.doi.org/10.1021/acsnano.9b02843.

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4

Rachow, T., N. Milenkovic, S. Janz, and S. Reber. "Formation of High Efficiency Epitaxial Emitters by APCVD." Energy Procedia 27 (2012): 438–43. http://dx.doi.org/10.1016/j.egypro.2012.07.090.

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5

Sasani Ghamsari, Morteza. "Chip-Scale Quantum Emitters." Quantum Reports 3, no. 4 (2021): 615–42. http://dx.doi.org/10.3390/quantum3040039.

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Integration of chip-scale quantum technology was the main aim of this study. First, the recent progress on silicon-based photonic integrated circuits is surveyed, and then it is shown that silicon integrated quantum photonics can be considered a compelling platform for the future of quantum technologies. Among subsections of quantum technology, quantum emitters were selected as the object, and different quantum emitters such as quantum dots, 2D materials, and carbon nanotubes are introduced. Later on, the most recent progress is highlighted to provide an extensive overview of the development o

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Chen, Chengzhao, Cheng Li, Shihao Huang, Yuanyu Zheng, Hongkai Lai, and Songyan Chen. "Epitaxial Growth of Germanium on Silicon for Light Emitters." International Journal of Photoenergy 2012 (2012): 1–8. http://dx.doi.org/10.1155/2012/768605.

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This paper describes the role of Ge as an enabler for light emitters on a Si platform. In spite of the large lattice mismatch of ~4.2% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared light emitters with various structures are reviewed, including the tensile-strained Ge epilayer, the Ge epilayer with a delta-doping SiGe layer, and the Ge/SiGe multiple quantum wells on Si. The fundamentals of photoluminescence physics in the different Ge structures are discussed briefly.

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Skipper, Alec M., Priyanka Petluru, Daniel J. Ironside, et al. "All-epitaxial, laterally structured plasmonic materials." Applied Physics Letters 120, no. 16 (2022): 161103. http://dx.doi.org/10.1063/5.0094677.

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Optoelectronic devices in the mid-infrared have attracted significant interest due to numerous potential applications in communications and sensing. Molecular beam epitaxial (MBE) growth of highly doped InAs has emerged as a promising “designer metal” platform for the plasmonic enhancement of mid-infrared devices. However, while typical plasmonic materials can be patterned to engineer strong localized resonances, the lack of lateral control in conventional MBE growth makes it challenging to create similar structures compatible with monolithically grown plasmonic InAs. To this end, we report th

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Shlepr, M. G., G. A. Schrantz, A. L. Rivoli, and G. Bajor. "The Influence of Dopant Type on Polysilicon Grain Growth and Solid Phase Epitaxial Regrowth." Microscopy and Microanalysis 3, S2 (1997): 477–78. http://dx.doi.org/10.1017/s1431927600009272.

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A recent process technology to manufacture bipolar junction transistors utilizes polysilicon emitters. Polysilicon is deposited, appropriately doped to form both NPN and PNP transistors, and exposed to temperatures that result in grain growth. Since polysilicon is in contact with Si( 100) at the emitter, base, and collector (Fig. 1), solid phase epitaxial regrowth might also occur. Production runs with this structure occasionally produce transistors with low current gain. High and low gain NPN and PNP transistors were characterized by transmission electron microscopy.Vertical sections through

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9

Muller, Andreas, Chih-Kang Shih, Jaemin Ahn, Dingyuan Lu, and Dennis G. Deppe. "Isolated single quantum dot emitters in all-epitaxial microcavities." Optics Letters 31, no. 4 (2006): 528. http://dx.doi.org/10.1364/ol.31.000528.

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Spindlberger, Lukas, Johannes Aberl, Felipe Murphy Armando, Thomas Fromherz, and Moritz Brehm. "Epitaxial Group-IV Quantum Dots as Room-Temperature Light Emitters." ECS Meeting Abstracts MA2024-01, no. 22 (2024): 1311. http://dx.doi.org/10.1149/ma2024-01221311mtgabs.

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Next-generation Si-based applications ranging from short-range (quantum) data transfer to sensing could highly benefit from potential progress in group-IV-based telecom light emitters that can be readily implemented with Si Photonics components [1]. However, since Si is known to be an indirect band gap semiconductor, light emission is limited and inhibits the integration of efficient emitters, such as, e.g. light-emitting diodes and lasers on Si Photonic platforms. In this presentation, we stress that a particular type of epitaxial Ge on Si quantum dots allows for overcoming the indirect bandg

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Zhao, Songrui, Mohammad Fazel Vafadar, and Milad Fathabadi. "60‐1: Invited Paper: Epitaxial, Scalable Nanowire Light Emitters and Photodetectors." SID Symposium Digest of Technical Papers 55, no. 1 (2024): 821–22. http://dx.doi.org/10.1002/sdtp.17655.

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In this paper, our novel epitaxial nanowire‐based surface‐emitting lasers and self‐powered, wavelength distinguishable photodetectors in the ultraviolet are reviewed, and their potentially applications to portable sensing and imaging systems for extended environment awareness are discussed.

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12

Wiwatowski, Kamil, Paweł Podlas, Magdalena Twardowska, and Sebastian Maćkowski. "Fluorescence Studies of the Interplay between Metal-Enhanced Fluorescence and Graphene-Induced Quenching." Materials 11, no. 10 (2018): 1916. http://dx.doi.org/10.3390/ma11101916.

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Fluorescence microscopy and spectroscopy were applied for studying the optical properties of a hybrid nanostructure, in which we combine plasmon-induced metal enhanced fluorescence with energy transfer to epitaxial graphene. Covering the layer of silver islands with a monolayer graphene, while turning on the efficient energy transfer from emitters, only moderately affects the enhancement of fluorescence attributed to the plasmon resonance in metallic nanostructures—as evidenced by the analysis of fluorescence decays. The results show that it is feasible to combine the properties of graphene wi

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TROEGER, R. T., T. N. ADAM, S. K. RAY, P. C. LV, S. KIM, and J. KOLODZEY. "TEMPERATURE DEPENDENCE OF TERAHERTZ EMISSION FROM SILICON DEVICES DOPED WITH BORON." International Journal of High Speed Electronics and Systems 14, no. 03 (2004): 670–75. http://dx.doi.org/10.1142/s012915640400265x.

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In this paper, we report on electrically pumped terahertz emitters based on silicon doped with boron acceptors. At cryogenic temperatures, three narrow spectral emission lines attributed to radiative transitions from p-like excited hydrogenic states to the s-like Γ8 ground state associated with the boron dopants were observed centered around 8 THz. The spectral emission line center frequencies were in remarkable agreement with values reported from absorption measurements and theoretical calculations. The total time-resolved terahertz emission power was found to be up to 31 μW per device facet.

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Karaliunas, Mindaugas, Tomas Serevicius, Edmundas Kuokstis, et al. "Optical Characterization of MBE-Grown ZnO Epilayers." Advanced Materials Research 222 (April 2011): 86–89. http://dx.doi.org/10.4028/www.scientific.net/amr.222.86.

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Optical characterization of molecular-beam-epitaxy-grown ZnO and MgZnO epitaxial layers on sapphire (0001) substrates is presented. The parameters such as carrier recombination time and optical gain coefficient are analyzed. Radiative recombination mechanisms of ZnO in dense quasiparticle system are discussed. The ZnO epilayers even with lower structural quality are tolerable for applications in optoelectronics as light emitters.

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Lewis, Ryan B. "(Invited) Epitaxial III-V Nanomaterials on the Si Platform for Quantum and Data Communications." ECS Meeting Abstracts MA2024-01, no. 22 (2024): 1327. http://dx.doi.org/10.1149/ma2024-01221327mtgabs.

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As Si-based integrated photonic components begin to replace older technologies for optical data communications, the need for better integration of semiconductor lasers on the Si platform is greater than ever. In addition, emerging interest in integrated-photonic-based quantum computing and quantum sensing presents a further need for quantum light emitters—entangled and single-photon—on Si. III-V quantum dots represent a promising solution, both for the active region of telecommunications-wavelength lasers and for quantum emitters. However, epitaxial quantum dots grown on conventional (100) sub

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Oda, K., K. Tani, S. i. Saito, and T. Ido. "(Invited) Ge Optical Emitters Fabricated by Ge Condensation and Epitaxial Growth." ECS Transactions 50, no. 9 (2013): 277–86. http://dx.doi.org/10.1149/05009.0277ecst.

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17

Ugur, Asli, Stefan Kremling, Fariba Hatami, et al. "Single-photon emitters based on epitaxial isolated InP/InGaP quantum dots." Applied Physics Letters 100, no. 2 (2012): 023116. http://dx.doi.org/10.1063/1.3676273.

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18

Kuzma-Filipek, I., M. Recaman-Payo, M. Aleman, et al. "Simplified cleaning for 22.5% nPERT solar cells with rear epitaxial emitters." Solar Energy Materials and Solar Cells 158 (December 2016): 19–23. http://dx.doi.org/10.1016/j.solmat.2016.06.036.

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19

Song, Jizhong, Sergei A. Kulinich, Jian Yan, et al. "Field Emitters: Epitaxial ZnO Nanowire-on-Nanoplate Structures as Efficient and Transferable Field Emitters (Adv. Mater. 40/2013)." Advanced Materials 25, no. 40 (2013): 5678. http://dx.doi.org/10.1002/adma.201370252.

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Cirlin, G. E., R. R. Reznik, I. V. Shtrom, et al. "Hybrid GaAs/AlGaAs nanowire --- quantum dot system for single photon sources." Физика и техника полупроводников 52, no. 4 (2018): 469. http://dx.doi.org/10.21883/ftp.2018.04.45818.07.

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AbstractIII–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.

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21

Baba, Razvan, Benjamin J. Stevens, Toshikazu Mukai, and Richard A. Hogg. "Epitaxial Designs for Maximizing Efficiency in Resonant Tunneling Diode Based Terahertz Emitters." IEEE Journal of Quantum Electronics 54, no. 2 (2018): 1–11. http://dx.doi.org/10.1109/jqe.2018.2797960.

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22

Hekmatshoar, Bahman, Davood Shahrjerdi, Marinus Hopstaken, John A. Ott, and Devendra K. Sadana. "Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cells." Applied Physics Letters 101, no. 10 (2012): 103906. http://dx.doi.org/10.1063/1.4751339.

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Song, Jizhong, Sergei A. Kulinich, Jian Yan, et al. "Epitaxial ZnO Nanowire-on-Nanoplate Structures as Efficient and Transferable Field Emitters." Advanced Materials 25, no. 40 (2013): 5750–55. http://dx.doi.org/10.1002/adma.201302293.

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24

Rachow, Thomas, Nena Milenkovic, Bernd Steinhauser, et al. "Solar Cells with Epitaxial or Gas Phase Diffused Emitters Above 21% Efficiency." Energy Procedia 77 (August 2015): 540–45. http://dx.doi.org/10.1016/j.egypro.2015.07.077.

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25

Stašys, Karolis, Andrejus Geižutis, and Jan Devenson. "Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers." Journal of Semiconductors 45, no. 2 (2024): 022101. http://dx.doi.org/10.1088/1674-4926/45/2/022101.

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Abstract We introduce a novel method to create mid-infrared (MIR) thermal emitters using fully epitaxial, metal-free structures. Through the strategic use of epsilon-near-zero (ENZ) thin films in InAs layers, we achieve a narrow-band, wide-angle, and p-polarized thermal emission spectra. This approach, employing molecular beam epitaxy, circumvents the complexities associated with current layered structures and yields temperature-resistant emission wavelengths. Our findings contribute a promising route towards simpler, more efficient MIR optoelectronic devices.

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26

Zogg, H., M. Arnold, F. Felder, et al. "Epitaxial Lead Chalcogenides on Si for Mid-IR Detectors and Emitters Including Cavities." Journal of Electronic Materials 37, no. 9 (2008): 1497–503. http://dx.doi.org/10.1007/s11664-008-0429-0.

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27

Abbarchi, Marco, Takaaki Mano, Takashi Kuroda, and Kazuaki Sakoda. "Exciton Dynamics in Droplet Epitaxial Quantum Dots Grown on (311)A-Oriented Substrates." Nanomaterials 10, no. 9 (2020): 1833. http://dx.doi.org/10.3390/nano10091833.

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Droplet epitaxy allows the efficient fabrication of a plethora of 3D, III–V-based nanostructures on different crystalline orientations. Quantum dots grown on a (311)A-oriented surface are obtained with record surface density, with or without a wetting layer. These are appealing features for quantum dot lasing, thanks to the large density of quantum emitters and a truly 3D lateral confinement. However, the intimate photophysics of this class of nanostructures has not yet been investigated. Here, we address the main optical and electronic properties of s-shell excitons in individual quantum dots

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28

Sturm, James C. "Advanced Column-IV Epitaxial Materials for Silicon-Based Optoelectronics." MRS Bulletin 23, no. 4 (1998): 60–64. http://dx.doi.org/10.1557/s0883769400030281.

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Over the past decade or so, research in silicon-based heterostructures has evolved from a few seminal publications on the growth and physical properties of Si1−xGex heteroepitaxial layers to a technology currently entering large-scale commercial production for heterojunction bipolar transistors (HBTs). During this period, extensive work has taken place on the optoelectronic applications of Si/Si1−x Gex such as 1.3–1.55 μam detectors for optical communication, 2–12-μm infrared detectors for two-dimensional (2D) focal plane arrays for night vision and thermal imaging, and infrared emitters for c

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Schäfer, Nicolas, Robert Weih, Julian Scheuermann, Florian Rothmayr, Johannes Koeth, and Sven Höfling. "Wavelength Tuning in Resonant Cavity Interband Cascade Light Emitting Diodes (RCICLEDs) via Post Growth Cavity Length Adjustment." Sensors 24, no. 12 (2024): 3843. http://dx.doi.org/10.3390/s24123843.

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We demonstrate substrate-emitting resonant cavity interband cascade light emitting diodes (RCICLEDs) based on a single distributed Bragg reflector (DBR). These devices operate in continuous wave mode at room temperature. Compared to standard ICLEDs without a cavity, we achieved an 89% reduction in the emission spectrum width, as indicated by the Full Width Half Maximum (FWHM) of 70 nm. Furthermore, we observed far-field narrowing and improved thermal stability. A single DBR configuration allows the cavity length to be adjusted by adding refractive index-matched material to the top of the epita

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Savinov, S. A., K. K. Nagaraja, Yu A. Mityagin, et al. "Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers." Optical Materials 101 (March 2020): 109716. http://dx.doi.org/10.1016/j.optmat.2020.109716.

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Allen, J. W., and Hermann G. Grimmeiss. "Visible Light-Emitting Diodes - The Formative Years." Materials Science Forum 590 (August 2008): 1–16. http://dx.doi.org/10.4028/www.scientific.net/msf.590.1.

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A brief history of visible light-emitting diodes (LED's) is given, from the first experimental observations of H.J.Round in 1907 to the mid-1970's when red and green emitters were in extensive production. Early investigations were empirical. This was changed with the invention of the transistor in 1947 by the demonstration of minority carrier injection at a forwardbiased junction, followed by recombination. In 1952 the discovery of the semiconducting behaviour of III-V compounds introduced a new range of materials. Gallium nitride seemed attractive for light emission and was investigated at Ph

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van Deurzen, Len, Ryan Page, Vladimir Protasenko, Kazuki Nomoto, Huili (Grace) Xing, and Debdeep Jena. "Optically pumped deep-UV multimode lasing in AlGaN double heterostructure grown by molecular beam homoepitaxy." AIP Advances 12, no. 3 (2022): 035023. http://dx.doi.org/10.1063/5.0085365.

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Multimode lasing at sub-300 nm wavelengths is demonstrated by optical pumping in AlGaN heterostructures grown on single-crystal AlN substrates by plasma-assisted molecular beam epitaxy. Edge-emitting ridge-based Fabry–Pérot cavities are fabricated with the epitaxial AlN/AlGaN double heterostructure by a combined inductively coupled plasma reactive ion etch and tetramethylammonium hydroxide etch. The emitters exhibit peak gain at 284 nm and modal linewidths on the order of 0.1 nm at room temperature. The applied growth technique and its chemical and heterostructural design characteristics offer

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33

Yoon, Woojun, James Moore, Anthony Lochtefeld, et al. "Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells." Japanese Journal of Applied Physics 56, no. 8S2 (2017): 08MB11. http://dx.doi.org/10.7567/jjap.56.08mb11.

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Milenkovic, N., T. Rachow, F. Heinz, S. Reber, and S. Janz. "Simulation and Characterization of Epitaxial n- and p-Type Emitters on Silicon Wafer Solar Cells." Energy Procedia 27 (2012): 173–78. http://dx.doi.org/10.1016/j.egypro.2012.07.047.

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35

Li, Yuandong, Maria Recamán Payo, Sukhvinder Singh, et al. "Optical and electrical performance of rear side epitaxial emitters for bifacial silicon solar cell application." Solar Energy Materials and Solar Cells 195 (June 2019): 43–48. http://dx.doi.org/10.1016/j.solmat.2019.01.051.

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Coppeta, R. A., R. Fabbro, M. Pusterhofer, T. Haber, G. Fasching, and D. Cooper. "Oxide-confined GaAs-based vertical-cavity surface-emitting laser: Measurement and modeling of the strain field." Journal of Applied Physics 133, no. 14 (2023): 143105. http://dx.doi.org/10.1063/5.0145680.

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The strain field of the emitters of one unstressed and two electrically stressed oxide-confined GaAs-based vertical-cavity surface-emitting lasers has been analyzed. The components of the strain tensor in the optical aperture, in the quantum wells, and at the oxide edge of the lamellas have been measured by nano-beam precession electron diffraction and geometrical phase analysis. The measurements have been used to validate the simulations based on the finite element method (FEM) of the mechanical behavior of the emitters. The FEM model is used to quantify the strain caused by the lattice misma

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Jadhav, Aakash, Pegah Bagheri, Andrew Klump, et al. "On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters." Semiconductor Science and Technology 37, no. 1 (2021): 015003. http://dx.doi.org/10.1088/1361-6641/ac3710.

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Abstract In this work, an alternative scheme to estimate the resistivity and ionization energy of Al-rich p-AlGaN epitaxial films is developed using two large-area ohmic contacts. Accordingly, the resistivities measured using current–voltage measurements were observed to corroborate the Hall measurements in the Van der Pauw configuration. A free hole concentration of ∼1.5 × 1017 cm−3 and low ionization energy of ∼65 meV in Mg-doped Al0.7Ga0.3N films is demonstrated. Nearly an order of magnitude lower hydrogen concentration than Mg in the as-grown AlGaN films is thought to reduce the Mg passiva

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Alema, Fikadu, Oleg Ledyaev, Ross Miller, Valeria Beletsky, Andrei Osinsky, and Winston V. Schoenfeld. "Pulsed-Metal Organic Chemical Vapor Deposition (PMOCVD) for Growth of Single Phase Wurtzite MgxZn1-xO Epitaxial Film with High Mg Content (x=0.51)." MRS Advances 1, no. 4 (2016): 299–304. http://dx.doi.org/10.1557/adv.2016.97.

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ABSTRACTPulsed metal organic chemical vapor deposition (PMOCVD) was used to grow high Mg content, high quality, wurtzite MgxZn1-xO (MgZnO) epitaxial film to realize photodetectors and emitters in the solar blind spectral window. MgZnO films with various Mg contents were deposited on c-plane Al2O3 with and without AlN buffer layer. The band gap of the films range from 3.24 eV to 4.49 eV, corresponding to fraction of Mg between x=0.0 to x=0.51, as determined by Rutherford backscattering spectroscopy (RBS). Cathodoluminescence (CL) measurement showed a linear blue shift in the spectral peak posit

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Komlenok, Maxim S., Vitali V. Kononenko, Andrey P. Bolshakov, et al. "CVD Encapsulation of Laser-Graphitized Electrodes in Diamond Electro-Optical Devices." Photonics 11, no. 1 (2023): 10. http://dx.doi.org/10.3390/photonics11010010.

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Conductive graphitized grooves on the dielectric surface of diamond have been created by KrF excimer laser radiation. The advantages of such a circuit board in high-field applications is rather limited because the crystal surface has a relatively low electrical breakdown threshold. To increase the electrical strength, a method of encapsulating surface conductive graphitized structures by chemical vapor deposition of an epitaxial diamond layer has been proposed and realized. The quality of the growth diamond is proved by Raman spectroscopy. A comparative study of the electrical resistivity of g

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ZHANG, Lu, ShaoYing KE, JianYuan WANG, Wei HUANG, SongYan CHEN, and Cheng LI. "Research progress in the epitaxial growth of silicon-based group IV materials, and their light emitters and photodetectors." SCIENTIA SINICA Physica, Mechanica & Astronomica 51, no. 3 (2021): 030005. http://dx.doi.org/10.1360/sspma-2020-0401.

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Kuznetsov, Alexey, Prithu Roy, Valeriy M. Kondratev, et al. "Anisotropic Radiation in Heterostructured “Emitter in a Cavity” Nanowire." Nanomaterials 12, no. 2 (2022): 241. http://dx.doi.org/10.3390/nano12020241.

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Tailorable synthesis of axially heterostructured epitaxial nanowires (NWs) with a proper choice of materials allows for the fabrication of novel photonic devices, such as a nanoemitter in the resonant cavity. An example of the structure is a GaP nanowire with ternary GaPAs insertions in the form of nano-sized discs studied in this work. With the use of the micro-photoluminescence technique and numerical calculations, we experimentally and theoretically study photoluminescence emission in individual heterostructured NWs. Due to the high refractive index and near-zero absorption through the emis

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Sejil, Selsabil, Loic Lalouat, Mihai Lazar, et al. "Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p⁺⁺ Emitters." Materials Science Forum 897 (May 2017): 63–66. http://dx.doi.org/10.4028/www.scientific.net/msf.897.63.

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This study deals with the electrical characterization of PiN diodes fabricated on a 4°off-axis 4H-SiC n+ substrate with a n- epilayer (1×1016 cm-3 / 10 µm). Optimized p++ epitaxial areas were grown by Vapour-Liquid-Solid (VLS) transport to form p+ emitters localized in etched wells with 1 µm depth. Incorporated Al level in the VLS p++ zones was checked by SIMS (Secondary Ion Mass Spectroscopy), and the doping level was found in the range of 1-3×1020 at.cm-3. Electrical characterizations were performed on these PiN diodes, with 800 nm deposit of aluminium as ohmic contact on p-type SiC. Electri

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Funato, Mitsuru, and Yoichi Kawakami. "Semipolar III Nitride Semiconductors: Crystal Growth, Device Fabrication, and Optical Anisotropy." MRS Bulletin 34, no. 5 (2009): 334–40. http://dx.doi.org/10.1557/mrs2009.96.

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AbstractSemipolar InGaN/GaN quantum wells (QWs) are quite attractive as visible light emitters. One of the reasons is that a better optical transition probability is expected because of weaker internal electric fields, compared to conventional polar QWs. In addition, in-plane optical polarization anisotropy, which is absent in conventional QWs, is another relevant property because it affects device design and also may provide a means for novel applications. We revealed that the in-plane optical anisotropy in semipolar QWs switched from one direction perpendicular to the [0001] crystal axis to

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Yamashita, Masatsugu, Hideki Takahashi, Toshihiko Ouchi, and Chiko Otani. "Ultra-broadband terahertz time-domain ellipsometric spectroscopy utilizing GaP and GaSe emitters and an epitaxial layer transferred photoconductive detector." Applied Physics Letters 104, no. 5 (2014): 051103. http://dx.doi.org/10.1063/1.4862974.

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Chichibu, Shigefusa F., Kazunobu Kojima, Akira Uedono, and Yoshitaka Sato. "Defect-Resistant Radiative Performance ofm-Plane Immiscible Al1−xInxN Epitaxial Nanostructures for Deep-Ultraviolet and Visible Polarized Light Emitters." Advanced Materials 29, no. 5 (2016): 1603644. http://dx.doi.org/10.1002/adma.201603644.

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Solodukha, V. A., Yu P. Snitovsky, and Ya A. Solovyov. "CONTROLLED PROCESSES OF THE PARAMETERS TRANSFORMATION BY ION BEAMS IN SILICON BIPOLAR MICROWAVE TRANSISTORS." Yugra State University Bulletin 14, no. 4 (2018): 23–37. http://dx.doi.org/10.17816/byusu20180423-37.

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The paper considers the formation of a transition layer of Mo - Si contacts, as well as the effect of Mo film deposition regimes and methods of heat treatment of contacts. It was found that when forming contacts of microwave transistors, by deposition of a Mo film on the surface of an epitaxial silicon layer, the structure of the latter depends on the dose of doping with phosphorus ions and on the temperature of post-implantation annealing. The results of experiments and two-dimensional physico-mathematical modeling to study the dependence of the parameters of test samples of the KT916A transi

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Gil, Bernard, Guillaume Cassabois, Ramon Cusco, Giorgia Fugallo, and Lluis Artus. "Boron nitride for excitonics, nano photonics, and quantum technologies." Nanophotonics 9, no. 11 (2020): 3483–504. http://dx.doi.org/10.1515/nanoph-2020-0225.

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AbstractWe review the recent progress regarding the physics and applications of boron nitride bulk crystals and its epitaxial layers in various fields. First, we highlight its importance from optoelectronics side, for simple devices operating in the deep ultraviolet, in view of sanitary applications. Emphasis will be directed towards the unusually strong efficiency of the exciton–phonon coupling in this indirect band gap semiconductor. Second, we shift towards nanophotonics, for the management of hyper-magnification and of medical imaging. Here, advantage is taken of the efficient coupling of

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Haws, Cori, Biswarup Guha, Edgar Perez, et al. "Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters." Materials for Quantum Technology 2, no. 2 (2022): 025003. http://dx.doi.org/10.1088/2633-4356/ac603e.

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Abstract The ability to combine different materials enables a combination of complementary properties and device engineering that cannot be found or exploited within a single material system. In the realm of quantum nanophotonics, one might want to increase device functionality by, for instance, combining efficient classical and quantum light emission available in III–V semiconductors, low-loss light propagation accessible in silicon-based materials, fast electro-optical properties of lithium niobate, and broadband reflectors and/or buried metallic contacts for local electric field application

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Shapturenka, Pavel, Christopher D. Pynn, Lesley Chan, Michael J. Gordon, and Steven P. DenBaars. "Biaxial, Hybrid Plastic-Elastic Relaxation in Micropatterned Semipolar InGaN Buffer Layers Improves Quality of Templated Quantum Well Emitters." ECS Meeting Abstracts MA2023-01, no. 32 (2023): 1843. http://dx.doi.org/10.1149/ma2023-01321843mtgabs.

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Despite significant progress and multiple creative approaches taken toward the realization of long-wavelength III-nitride based light emitters over the past decade, high double-digit external quantum efficiencies remain elusive for GaN/InGaN based devices for wavelengths longer than 525 nm. This stems from the large mismatch between the GaN and InGaN lattice that manifests in deleterious crystal strain gradients, degrades surface growth morphology, and introduces diverse and potent nonradiative defects. A promising route to mitigation of strain-based effects is templating epitaxial growth on r

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Kharlamova, Marianna V., Maria G. Burdanova, Maksim I. Paukov, and Christian Kramberger. "Synthesis, Sorting, and Applications of Single-Chirality Single-Walled Carbon Nanotubes." Materials 15, no. 17 (2022): 5898. http://dx.doi.org/10.3390/ma15175898.

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The synthesis of high-quality chirality-pure single-walled carbon nanotubes (SWCNTs) is vital for their applications. It is of high importance to modernize the synthesis processes to decrease the synthesis temperature and improve the quality and yield of SWCNTs. This review is dedicated to the chirality-selective synthesis, sorting of SWCNTs, and applications of chirality-pure SWCNTs. The review begins with a description of growth mechanisms of carbon nanotubes. Then, we discuss the synthesis methods of semiconducting and metallic conductivity-type and single-chirality SWCNTs, such as the epit

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