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Journot, Timotée. "Epitaxie van der Waals de GaN sur graphène pour des applications en photonique." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAI078/document.
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De par ses propriétés physiques remarquables, le GaN est un matériau très attrayant pour la fabrication de composants photoniques. Sa synthèse est en revanche très complexe et reste un obstacle à son utilisation. L’hétéroépitaxie est, pour l’heure, la technique de synthèse la plus employée mais l’absence de substrats cristallins aux propriétés proches de celles du GaN conduit à l’élaboration de couches minces épitaxiées très défectueuses. Bien que les dispositifs à base de GaN soient d’ores et déjà fonctionnels, une augmentation de la qualité cristalline du matériau permettra une amélioration de leurs performances.L’épitaxie Van der Waals (VdW) est une alternative qui se différencie de l’épitaxie classique par la nature de l’interaction à l’interface entre substrat et matériau déposé. Cette dernière n’est alors plus régie par des forces fortes (liaisons covalente, ionique, etc) mais par des forces faibles, de type VdW. L’hétéroépitaxie VdW qui prône une interface de croissance compliante, apparait ainsi comme une méthode de synthèse alternative judicieuse pour l’amélioration de la qualité cristalline des couches épitaxiées. Ces travaux de thèse proposent d’explorer, en détail, la faisabilité de l’épitaxie VdW dans le cas particulier de la croissance de GaN sur graphène par EPVOM.L’utilisation d’un nouveau type de surface de très basse énergie pour supporter l’épitaxie du GaN nécessite le développement d’une nouvelle stratégie de croissance. Dans ce travail, un procédé en trois étapes a été mis en place pour la germination du GaN sur le graphène. Les cristaux microniques qui en résultent présentent une qualité cristalline remarquable, sont entièrement relaxés et adoptent une orientation cristallographique commune. Une relation d’épitaxie peut ainsi être mise en place à travers une interface faible qui est alors une interface d’épitaxie compliante. La faisabilité et les atouts de l’épitaxie VdW de GaN sur graphène sont donc démontrés expérimentalement. Plus précisément, nous avons démontré le rôle du substrat sous-jacent au graphène dans larelation d’épitaxie. Son caractère polaire, en particulier, semble indispensable pour qu’une relation d’épitaxie à distance puisse exister à travers le graphène.Cette étude exploratoire a à la fois permis d’illustrer tout le potentiel de l’épitaxie VdW de matériaux 3D sur 2D, d’en identifier certaines limites mais aussi de démontrer les possibilités liées à la création de nouvelles interfaces d’épitaxie 3D / 2D<br>Due to its outstanding physical properties, GaN is a very attractive material to conceive photonic devices. However its synthesis is very complex and remains an obstacle to its use. For now, heteroepitaxy is the most used technique but the lack of crystalline substrates with properties close to those of GaN leads to the growth of highly defective epitaxial thin films. Although GaN based devices are already functional, an increase in the crystalline quality of the material will improve their performances.Van derWaals (VdW) epitaxy is an alternative that differs from classical epitaxy by the nature of the interaction at the interface between the substrate and the deposited material. The former is then no longer governed by strong forces (covalent bonds, ionic bonds, etc) but by weak forces of VdW type. VdW heteroepitaxy, which might allow a compliant growth interface, thus appears as a beneficial alternative to improve the cristalline quality of the epitaxial layers. This thesis proposes to explore in detail the feasability of the VdW epitaxy in the particular case of the growth of GaN on graphene by MOVPE.The use of a new type of surface with a very low surface energy, to support the GaN epitaxy requires the developpement of a new growth strategy. In this work, a three step process was set up for the nucleation of GaN on graphene. The resultant micronic GaN crystals exhibit high crystalline quality, being free of stress and having a unique cristallographic orientation. An epitaxial relationship can thus be implemented through a weak interface that turns out to be compliant. The feasibility of the VdW epitaxy as well as its advantages is demonstrated experimentally. Specifically, we have highlighted the role of the substrate underlying graphene in the epitaxial relationship - in particular its polar character seems required for a remote epitaxial relationship to exist through the graphene.This study allowed to highlight the full potential of the VdW epitaxy of 3D materials on 2D, to identify some limitations and also to demonstrate the possibilities opened by the formation of new 3D / 2D interfaces
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Rudolph, Reiner. "Quasi-van der Waals-Epitaxie von GaSe auf Si und GaAs Struktur und elektronische Eigenschaften /." [S.l. : s.n.], 1999. http://www.diss.fu-berlin.de/1999/65/index.html.
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Marsden, Alexander J. "Van der Waals epitaxy in graphene heterostructures." Thesis, University of Warwick, 2015. http://wrap.warwick.ac.uk/77193/.
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Graphene — a two-dimensional sheet of carbon atoms — has surged into recent interest with its host of remarkable properties and its ultimate thinness. However, graphene combined with other materials is starting to attract more attention. These heterostructures can be important for production routes, incorporating graphene into existing technologies, or for modifying its intrinsic properties. This thesis aims to examine the role of van der Waals epitaxy within these heterostructures. First, the graphene-copper interaction during chemical vapour deposition of graphene is investigated. Graphene is found to grow with a mismatch epitaxy of 8 relative to the [001] direction of the Cu(100) surface, despite a mismatch in symmetry and lattice parameter between two. Further, the electronic structure of both graphene and copper is unchanged by the interaction. This highlights the weak interaction between the two, owing to its van der Waals nature. Functionalised graphene is another important heterostructure, and is intensively studied for both graphene production routes and for altering graphene’s properties. Here, it is the change to the homogeneous graphene surface that makes it interesting for van der Waals epitaxy. The effect of functionalisation of graphene with atomic oxygen and nitrogen is presented next. In both cases, only small amounts of functionalisation ( 5 at%) is sufficient to significantly deteriorate the -band structure of the graphene through localisation. For small amounts of nitrogen functionalisation, and greater amounts of oxygen functionalisation, extended topological defects are formed in the graphene lattice. Unlike epoxide oxygen groups, these disruptions to the pristine graphene are found to be irreversible by annealing. Next, the interaction between graphene and the organic semiconducting molecule vanadyl-phthalocyanine (VOPc) is presented. As a result of the van der Waals nature of the graphene surface, VOPc molecules can form crystals microns in size when deposited onto a substrate with an elevated temperature of 155 C; at ambient temperatures, the crystals are only tens of nanometres across. In contrast, the functionalised graphene oxide surface prevents large crystal growth, even at elevated temperatures, because surface functionalities inhibit molecule diffusion. This highlights the importance of graphene as a substrate for molecular crystal growth, even when the growth is not epitaxial. Finally, the supramolecular assembly of trimesic acid (TMA) and terephthalic acid (TPA) is presented. Despite their chemical similarity they display different behaviour as they transition from monolayers to three-dimensional structures: for TMA, the epitaxial chicken wire structure seen at a monolayer templates up through the layers as molecules stack, until a thickness of 20 nm, when random in-plane orientations appear; on the other hand, TPA forms a brickwork structure at the monolayer, which quickly transitions to fibre-like crystals with a bulk structure for the thin films. However, the TPA orientation is still determined by the epitaxy with the graphene substrate, although this is significantly weaker than for TMA.
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Wisotzki, Elmar. "Quasi-van-der-Waals-Epitaxie von II-VI-Halbleitern auf Schichtgitterchalkogeniden und GaSe-terminierten Si(111)-Oberflächen." [S.l. : s.n.], 2002. http://elib.tu-darmstadt.de/diss/000330.
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Vergnaud, Céline. "Optimisation de la croissance de MoSe2 - WSe2 par épitaxie de Van der Waals pour la valleytronique." Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALY038.
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Cette thèse a pour objet l’optimisation de la croissance par épitaxie par jets moléculaires dans le régime de van der Waals de couches semi-conductrices bidimensionnelles (2D) de diséléniures de métaux de transition (MoSe2, WSe2) pour les études magnéto-optiques et électriques. Cette optimisation passe par l’amélioration de la qualité cristallographique des couches sur de grandes surfaces en ajustant les paramètres de croissances (température et flux). En particulier, la maîtrise de l’état de surface du substrat est déterminante sur les mécanismes de croissance de ces couches. L’élaboration de ces matériaux de basse dimensionnalité a nécessité l’utilisation de techniques de caractérisation avancées (Diffraction de rayons X en incidence rasante, Microscopie électronique en transmission en mode haute résolution, ect). Dans cette thèse, nous nous sommes concentrés sur deux substrats particuliers : l’oxyde de silicium et le mica. Ils présentent tous les deux la particularité d’être isolants et inertes d’un point de vue électronique, ce qui est indispensable pour sonder les propriétés optiques et électriques intrinsèques des couches 2D. Finalement, nous avons développé les dopages électrique (dopage p) pour la microélectronique et magnétique (dopage Mn) pour la valleytronique<br>The purpose of this thesis is to optimize growth by molecular beam epitaxy in the van der Waals regime of two-dimensional (2D) semiconductor layers of transition metal diselenides (MoSe2, WSe2) for magneto-optical and electric studies. This optimization involves improving the crystallographic quality of the layers over large areas by adjusting the growth parameters (temperature and flux). In particular, the control of the surface state of the substrate is decisive on the growth mechanisms of these layers. The development of these low-dimensional materials required the use of advanced characterization techniques (Grazing incidence X-ray diffraction, High Resolved Transmission Electronic Microscopy, ect). In this thesis, we focused on two specific substrates : silicon oxide and mica. They both have the particularity of being insulating and inert from an electronic point of view, which is essential to probe the optical and electrical intrinsic properties of 2D layers. Finally, we developed electrical doping (p doping) for microelectronics and magnetic (Mn doping) for valleytronics
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Duraz, Jules. "LEDs flexibles exploitant l'épitaxie van der Waals avec les semi-conducteurs nitrures : application aux implants cochléaires optiques." Electronic Thesis or Diss., université Paris-Saclay, 2024. http://www.theses.fr/2024UPAST101.
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Le développement de l'optogénétique ouvre un nouveau champ d'application aux sources lumineuses à base de semiconducteurs.Les LEDs à base de nitrure de gallium peuvent, par exemple, être employées dans la réalisation de prototypes d'implants pour restaurer l'audition.Des contraintes particulières apparaissent pour ces applications, avec notamment des critères spécifiques liés à l'émission devant être respectés pour des rayons de courbure de l'ordre du millimètre.L'objectif de cette thèse est de réaliser des LEDs flexibles pouvant atteindre ces rayons de courbure ainsi que de caractériser l'évolution des propriétés des LEDs fabriquées en fonction de leur courbure. La fabrication des LEDs flexibles est principalement basée sur l'épitaxie « van der Waals » sur substrat de saphir mais des structures LED sur silicium sont également étudiées. Différentes techniques de fabrication et report sont développées.Un banc de mesure est conçu et assemblé pour caractériser les LEDs flexibles en vue de répondre aux besoins de l'application. Les propriétés électro-optiques des LEDs sont ainsi mesurées jusqu'à 3 mm de rayon de courbure<br>The development of optogenetics is opening up a new field of application for semiconductor-based light sources.Gallium nitride-based LEDs, for example, can be used in prototype implants to restore hearing.There are particular constraints for these applications, with specific emission criteria that must be met for radii of curvature of the order of a millimetre.The aim of this thesis is to produce flexible LEDs capable of achieving these bending radii and to characterise the evolution of the properties of the LEDs produced as a function of their bending. The fabrication of flexible LEDs is mainly based on "van der Waals" epitaxy on a sapphire substrate, but LED structures on silicon are also studied. Various manufacturing and transfer techniques are developed.A measurement bench is designed and assembled to characterise the flexible LEDs in order to meet the needs of the application. The electro-optical properties of the LEDs are measured down to a radius of curvature of 3 mm
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Sant, Roberto. "Exploration par rayonnement synchrotron X de la croissance et de la structure de dichalcogénures 2D." Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAY075.
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Les dichalcogenures de métaux de transition bidimensionnels (2D) suscitent un grand intérêt pour des applications variées, principalement en optoelectronique. Toutefois, la faible compréhension des mécanismes liés à leur épitaxie, de leur microstructure et de la nature de leur interaction avec le substrat représentent encore des problèmes ouverts. Nous avons exploré un certain nombre de croissances épitaxiales des dichalcogenures 2D préparés par épitaxie à jets moléculaires sur des substrats différents. Nous en avons examiné la structure atomique et essayé d’en modifier certains in situ. Plusieurs systèmes et processus ont été étudiés: (i) des tellurures de métaux de transition, ZrTe2, MoTe2 et TiTe2, épitaxiés sur un substrat de InAs(111), (ii) l’intercalation d’espèces atomique alcalines entre une monocouche de MoS2 et son substrat d’Au(111), (iii) la croissance et le traitement thermique sous atmosphère de H2S d’une monocouche de PtSe2 sur Pt(111). Notre travail s’appuie sur des approches à la fois phénoménologiques et quantitatives de diffraction de rayons X de surface, souvent complétées par ses analyses effectuées à l’aide d’autres techniques (STM, TEM, XPS et ARPES). Les principaux résultats sont que: (i) une phase orthorhombique et une onde de densité de charge sont stabilisées à température ambiante dans les couches de MoTe2 et TiTe2 par un effet de déformation induite par l’épitaxie; (ii) l’intercalation de césium (Cs) au-dessous du MoS2 induit un découplage structurel mais aussi électronique de la monocouche de son substrat; (iii) la sulfurisation de PtSe2 à chaud en conditions contrôlées permet de substituer des atomes de Se par des atomes de S dans la couche supérieure du dichalcogenure, formant ainsi un alliage ordonné de SPtSe, structure de type Janus<br>Two-dimensional transition metal dichalcogenides (TMDCs) are promising materials for a variety of applications, especially in optoelectronics. However, the lack of understanding of their epitaxy - i.e. growth mechanism, microscopic structure, nature of the 2D layer-substrate interaction, etc. - is still a crucial issue to address. In this PhD thesis we explored a series of epitaxial growths of monolayer and thin film TMDCs grown by molecular beam epitaxy (MBE) on a variety of substrates. We studied their atomic structures and we attempted the modifications of some of them with various in situ methods. Several systems and processes have been investigated: (i) transition metal ditellurides, ZrTe2 , MoTe2 and TiTe2 on InAs(111) substrate, (ii) the intercalation of alkali metal species between single layer MoS2 and its Au(111) substrate, (iii) the growth and the thermal treatments in H2S atmosphere of monolayer PtSe2 on Pt(111). Our work relies on both phenomenological and quantitative methods based on surface X-ray diffraction, often complemented by parallel analysis performed with other probes, e.g. STM, TEM, XPS, ARPES. Most notably, we found that: (i) a metastable orthorhombic phase and a charge density wave phase can be stabilized at room temperature in MoTe2 and TiTe2 owing to the epitaxial strain in the materials; (ii) the intercalation of Cs atoms under MoS2 induces structural and electronic decoupling of the 2D MoS2 layer from its Au(111) substrate; (iii) the sulfurization of PtSe2 promotes the Se-by-S substitution in one (or both) of its two chalcogen layers, leading either to the full conversion of the selenide into a sulfide or even to an ordered Janus alloy
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Wagner, Christian. "Potential Energy Minimization as the Driving Force for Order and Disorder in Organic Layers." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-38242.
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The topic of this work is the structural characterization and theoretical modeling of organic single and heterolayers. The growth of sub-monolayers and monolayers (ML) of the two polycyclic aromatic hydrocarbons quaterrylene (QT) and hexa-peri-hexabenzocoronene (HBC) on Ag(111) and Au(111) was investigated. A transition from a disordered, isotropic phase to an ordered phase with increasing coverage was found. The lattice of the ordered phase turned out to be coverage dependent. The intermolecular potential was modeled including Coulomb and van der Waals interaction by a force-field approach. The postulated repulsive character of the potential could be connected to the non-uniform intramolecular charge distribution and to a screening of the van der Waals forces. Furthermore, the influence of the variable lattice constant on the epitaxial growth of HBC was studied. The second part of this work deals with a ML of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on a ML of HBC. In dependency on the initial lattice constant of HBC, a total of three line-on-line (LOL) and point-on-line coincident phases of PTCDA (with respect to HBC) was found. Following an analysis of the general properties of LOL coincident systems via force-field calculations, a new method to predict the structure of such systems is introduced<br>Thema dieser Arbeit ist die strukturelle Charakterisierung von organischen Einfach- und Heterolagen sowie deren theoretische Beschreibung und Modellierung. Es wurden Submonolagen und Monolagen (ML) der polyzyklischen Kohlenwasserstoffe Quaterrylen (QT) und Hexa-peri-hexabenzocoronen (HBC) auf Ag(111) und Au(111) Einkristallen untersucht und ein Übergang von einer ungeordneten, isotropen Phase zu einer geordneten Phase mit steigender Bedeckung beobachtet. Die geordnete Phase wies dabei bedeckungsabhängige Gitterkonstanten auf. Das intermolekulare Potential wurde unter Berücksichtigung von Coulomb und van der Waals Anteilen mittels Kraftfeldmethoden modelliert. Der postulierte repulsive Charakter des Potentials konnte auf die Ladungsverteilung im Molekül und eine Abschwächung des van der Waals Potentials zurückgeführt werden. Weiterhin wurde der Einfluss der variablen HBC Gitterkonstante auf die epitaktische Relation des Gitters zum Metallsubstrat untersucht. Der zweite Teil der Arbeit widmet sich der Untersuchung einer ML 3,4,9,10-Perylenetetracarboxylic dianhydrid (PTCDA) auf einer ML HBC. Dabei wurden, in Abhängigkeit von der HBC Gitterkonstante, insgesamt drei verschiedene Typen von line-on-line bzw. point-on-line Epitaxie nachgewiesen. Im Anschluss an eine Analyse der generellen Eigenschaften solcher epitaktischer Lagen mittels Kraftfeldrechnungen wird eine neue Methode zur Vorhersage der Struktur konkreter Systeme vorgestellt
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Ben, Jabra Zouhour. "Study of new heterostructures : silicene on graphene." Electronic Thesis or Diss., Aix-Marseille, 2021. http://www.theses.fr/2021AIXM0583.
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Le but de ce travail est la croissance du silicène sur Gr. J'ai décrit le substrat en fonction des conditions d’élaboration par CVD. Lorsque la proportion de H2 est faible il est possible d’obtenir du Gr homogène sur couche tampon (BL) sur SiC. Le STM et LEED montrent la superposition de la maille du Gr et de la reconstruction de la BL représentatif du Gr épitaxié. Lorsque la proportion de H2 est élevée la couche de Gr obtenue est totalement hydrogénée. Ceci est un résultat nouveau car aucun procédé d’intercalation d’hydrogène n’avait permis jusqu’à présent d’hydrogéner totalement les échantillons de (6x6)Gr épitaxié sur BL. Pour des proportions intermédiaires de H2/Ar, la coexistence de (6x6)Gr et H-Gr est observée. En fonction de la proportion de H2 dans le mélange gazeux, soit la surface du SiC reste passivée pendant toute la croissance du Gr et on obtient du H-Gr, soit le H2 désorbe partiellement, ou totalement et on obtient soit la coexistence des deux structures soit du (6x6)Gr pleine plaque. J’ai étudié la croissance par MBE de Si-ene sur (6x6)Gr. J’ai démontré qu'il est possible de former des flaques de Si-ene pour des épaisseurs de dépôt <0.5MC. Nous observons la présence de zones planes d’une épaisseur de 0.2-0.3nm correspondant à une monocouche de Si-ene, entourées d’îlots dendritiques 3D de Si. Les spectres Raman mettent en évidence un pic allant jusqu’à 563cm-1 ce qui est la valeur la plus proche du Si-ene FS jamais obtenue. Ces démontrent la formation de Si-ene quasi-FS. Ce travail contribue à une meilleure compréhension du mécanisme de croissance CVD du Gr et à l’avancement des recherches dans le domaine de la croissance épitaxiale des matériaux 2D<br>The topic of this thesis deals with the study of the growth and properties of silicene (Si-ene) on graphene (Gr) on 6H-SiC(0001) with the final goal of forming free-standing (FS) Si-ene on an insulating or semiconductor substrate. I have described the substrate as a function of the CVD processing conditions. When the proportion of H2 is low it is possible to obtain homogeneous Gr on buffer layer (BL) on SiC. The STM and LEED show the superposition of the Gr mesh and the BL reconstruction representative of the epitaxial Gr. When the proportion of H2 is high, the resulting Gr layer is fully hydrogenated. This is a new result as no hydrogen intercalation process has been able to fully hydrogenate (6x6)Gr samples epitaxial on BL until now. For intermediate proportions of H2/Ar, the coexistence of (6x6)Gr and H-Gr is observed. Depending on the proportion of H2 in the gas mixture, either the SiC surface remains passivated during the entire Gr growth and H-Gr is obtained, or the H2 partially or totally desorbs and either both structures coexist or full plate (6x6)Gr is obtained. I have studied the MBE growth of Si-ene on (6x6)Gr. I have shown that it is possible to form Si-ene puddles for deposit thicknesses <0.5MC. We observe the presence of flat areas of 0.2-0.3nm thickness corresponding to a Si-ene monolayer, surrounded by 3D dendritic islands of Si. The Raman spectra show a peak up to 563cm-1 which is the closest value to Si-ene FS ever obtained. This demonstrates the formation of quasi-FS Si-ene. This work contributes to a better understanding of the CVD growth mechanism of Gr and to the advancement of research in the field of epitaxial growth of 2D materials
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Bradford, Jonathan. "Growth and characterisation of two-dimensional materials and their heterostructures on sic." Thesis, Queensland University of Technology, 2019. https://eprints.qut.edu.au/134400/1/Jonathan_Bradford_Thesis.pdf.
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Atomically thin two-dimensional materials and their hybrids represent an elegant approach to designing and synthesizing functional nanomaterials and are expected to find applications across a broad range of new technologies. This project explored scalable synthesis of various two-dimensional layered materials and their hybrid counterparts on silicon carbide, an industrially relevant device substrate. It demonstrates the integration of graphene, hexagonal boron nitride and transition metal dichalcogenide layers which were characterised by high resolution scanning probe microscopy and electron spectroscopy. The procedures developed in this work are expected to facilitate a route towards large-scale synthesis of novel nanoscale devices directly on-chip.
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Bezzi, Luca. "Materiali 2D van der Waals." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2020.
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Dalla scoperta del grafene, molte ricerche sono state condotte sui cosiddetti “materiali 2D”. Questo elaborato si focalizza sulle proprietà strutturali, elettroniche, ottiche ed eccitoniche di due materiali bidimensionali, ossia il grafene il disolfuro di molibdeno (MoS2-1H), quest’ultimo un importante semiconduttore. Le proprietà di questi materiali sono diverse rispetto alla loro controparte massiva (bulk) grafite e MoS2-2H, e un loro confronto è stato preso in considerazione. Come metodo di indagine sono state scelte simulazioni quanto- meccaniche ab initio dei sistemi in esame, un approccio che, negli ultimi decenni, sta avendo un impatto sempre più importante sulla fisica, sulla chimica dello stato solido e sulla scienza dei materiali, promuovendo non solo una comprensione più profonda, ma anche la possibilità di contribuire in modo significativo alla progettazione di materiali per nuove tecnologie. Questo importante passo avanti è stato possibile grazie a: (i) una descrizione migliorata ed efficiente degli effetti elettronici a molti corpi (many-body) nella teoria del funzionale della densità (DFT), nonché lo sviluppo di metodi post-DFT per lo studio di proprietà specifiche; (ii) un’accurata implementazione di questi metodi in software altamente efficienti, stabili e versatili, capaci di sfruttare il potenziale delle architetture informatiche moderne. Tra i possibili software ab initio basati su DFT, abbiamo scelto il pacchetto di simulazione di Vienna ab initio VASP, considerato un gold standard per questo tipo di indagini. I risultati ottenuti per le varie proprietà di bulk e di superficie (bidimensionale) dei materiali scelti sono in ottimo accordo con dati ottenuti in precedenza, sia a livello teorico, sia sperimentale. Questo elaborato getta quindi le basi per futuri studi nel campo dei materiali 2D per comprendere, analizzare, ingegnerizzare nuovi materiali con proprietà desiderabili e per sviluppare nuove applicazioni degli stessi.
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Boddison-Chouinard, Justin. "Fabricating van der Waals Heterostructures." Thesis, Université d'Ottawa / University of Ottawa, 2018. http://hdl.handle.net/10393/38511.
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The isolation of single layer graphene in 2004 by Geim and Novoselov introduced a
method that researchers could extend to other van der Waals materials. Interesting and new properties arise when we reduce a crystal to two dimensions where they are often different from their bulk counterpart. Due to the van der Waals bonding between layers, these single sheets of crystal can be combined and stacked with diferent sheets to create novel materials.
With the goal to study the interesting physics associated to these stacks, the focus of this work is on the fabrication and characterization of van der Waals heterostructures.
In this work, we first present a brief history of 2D materials, the fabrication of heterostructures, and the various tools used to characterize these materials. We then give a description of the custom-built instrument that was used to assemble various 2D heterostructures followed by the findings associated with the optimization of the cleanliness of the stack's interface and surface. Finally, we discuss the results related to the twisting of adjacent layers of stacked MoS2 and its relation to the interlayer coupling between said layers.
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Tiller, Andrew R. "Spectra of Van der Waals complexes." Thesis, University of Cambridge, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333415.
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Mauro, Diego. "Electronic properties of Van der Waals heterostructures." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2016. http://amslaurea.unibo.it/10565/.
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L’interazione spin-orbita (SOI) nel grafene è attualmente oggetto di intensa ricerca grazie alla recente scoperta di una nuova classe di materiali chiamati isolanti topologici.
Questi materiali, la cui esistenza è strettamente legata alla presenza di una forte SOI, sono caratterizzati dall’interessante proprietà di avere un bulk isolante ed allo stesso tempo superfici conduttrici. La scoperta teorica degli isolanti topologici la si deve ad un lavoro nato con l’intento di studiare l’influenza dell’interazione spin-orbita sulle proprietà del grafene. Poichè questa interazione nel grafene è però intrinsecamente troppo piccola, non è mai stato possibile effettuare verifiche sperimentali. Per questa ragione, vari lavori di ricerca hanno recentemente proposto tecniche volte ad aumentare questa interazione. Sebbene alcuni di questi studi abbiano mostrato un effettivo aumento dell’interazione spin-orbita rispetto al piccolo valore intrinseco, sfortunatamente hanno anche evidenziato una consistente riduzione della qualità del grafene.
L’obbiettivo che ci si pone in questa tesi è di determinare se sia possibile aumentare l’interazione spin-orbita nel grafene preservandone allo stesso tempo le qualità. La soluzione proposta in questo lavoro si basa sull’utilizzo di due materiali semiconduttori, diselenio di tungsteno WSe2 e solfuro di molibdeno MoS2, utilizzati da substrato su cui sopra verrà posizionato il grafene formando così un’eterostruttura -nota anche di “van der Waal” (vdW)-.
Il motivo di questa scelta è dovuto al fatto che questi materiali, appartenenti alla famiglia dei metalli di transizione dicalcogenuri (TMDS), mostrano una struttura reticolare simile a quella del grafene, rendendoli ideali per formare eterostrutture e ancora più importante, presentano una SOI estremamente grande. Sostanzialmente l’idea è quindi di sfruttare questa grande interazione spin-orbita del substrato per indurla nel grafene aumentandone così il suo piccolo valore intrinseco.
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Klein, Andreas. "Energietransferprozesse in matrixisolierten van-der-Waals-Komplexen." [S.l. : s.n.], 2001. http://deposit.ddb.de/cgi-bin/dokserv?idn=962344761.
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Odeyemi, Tinuade A. "Numerical Modelling of van der Waals Fluids." Thèse, Université d'Ottawa / University of Ottawa, 2012. http://hdl.handle.net/10393/22661.
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Many problems in fluid mechanics and material sciences deal with liquid-vapour flows. In these flows, the ideal gas assumption is not accurate and the van der Waals equation of state is usually used. This equation of state is non-convex and causes the solution domain to have two hyperbolic regions separated by an elliptic region. Therefore, the governing equations of these flows have a mixed elliptic-hyperbolic nature.
Numerical oscillations usually appear with standard finite-difference space discretization schemes, and they persist when the order of accuracy of the semi-discrete scheme is increased. In this study, we propose to use a Chebyshev pseudospectral method for solving the governing equations. A comparison of the results of this method with very high-order (up to tenth-order accurate) finite difference schemes is presented, which shows that the proposed method leads to a lower level of numerical oscillations than other high-order finite difference schemes, and also does not exhibit fast-traveling packages of short waves which are usually observed in high-order finite difference methods. The proposed method can thus successfully capture various complex regimes of waves and phase transitions in both elliptic and hyperbolic regimes
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Connelly, James Patrick. "Microwave studies of Van der Waals complexes." Thesis, University of Oxford, 1993. http://ora.ox.ac.uk/objects/uuid:3865eb1d-d288-44c9-8d42-84f7ff2c0608.
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This thesis describes the commissioning and development of a pulsed supersonic nozzle, Fourier-transform microwave spectrometer and its application to the study of several weakly bound van der Waals complexes. A pulsed supersonic expansion, Fourier-transform microwave spectrometer based on the Flygare design with a number of modifications has been constructed with an operating range of 6-18 GHz. A homodyne detection circuit mixing signals to modulus values between dc and 1 MHz is used, requiring two measurements to determine absolute transition frequencies. Transition frequencies are measured from the power spectrum by determining the first derivative zero crossing point in a least squares fitting procedure. Semiautomation of many of the spectrometer operations has been achieved allowing unattended data collection over scans of up to 300 MHz. The microwave spectrum of Ar<sub>2</sub>-OCS and Ar<sub>2</sub>-OC<sup>34</sup>S has been observed and analysed using conventional Watson S reduction hamiltonian parameters. Effective structural parameters are derived and used in a harmonic force field analysis, based on the centrifugal distortion constants, to compare the trimer interations with a model based on the sum of dimer interactions. A series of complexes containing the nitrogen molecule undergoing tunnelling motions have been studied. Hyperfine matrix elements for the first order nuclear quadrupole interaction are derived for the coupled identical nuclei case appropriate to the rapid tunnelling motions observed. The microwave spectrum of N<sub>2</sub>-OCS is described. Tunnelling and nuclear spin statistical effects for two symmetry states are observed arising from the interchange of nitrogen nuclei. Rotational and quadrupole constants are derived; an accidental near degeneracy of two rotational levels allows the off-diagonal quadrupole coupling constant to be determined from second order effects. A tunnelling hamiltonian fitting the quadrupole coupling constants to an angular potential has been used to calculate the tunnelling frequency and barrier to N<sub>2</sub> rotation. The microwave spectrum of N<sub>2</sub>-O<sub>3</sub> and a preliminary spectrum of N<sub>2</sub>-SO<sub>3</sub> have been observed. Rotation-inversion motions of the O<sub>3</sub> and SO<sub>2</sub> moieties must be considered in addition to the N<sub>2</sub> tunnelling to fit the spectrum. Tunnelling frequencies for the O<sub>3</sub>/SO<sub>2</sub> and geared motions with the N<sub>2</sub> are derived as well as structural parameters. Modifications for production of refractory molecules and complexes by laser ablation have been made. A modified nozzle employing rods of material is used with the ablation process taking place in the nozzle throat. Modifications to obtain an expansion along the axis of the microwave cavity employ a hemispherical Fabry-Perot cavity configuration. The system has been tested on a number of diatomic molecules including PbS and CuCl.
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Wright, Nicholas J. "Bound states of Van der Waals trimers." Thesis, Durham University, 1998. http://etheses.dur.ac.uk/5048/.
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A method for calculating the energy levels and wave functions of floppy tri- atomic systems such as rare-gas trimers has been developed. It is based upon a potential-optimized discrete variable representation and takes into account the wide-amplitude vibrations that occur in such systems. The quadrature error that occurs in DVR calculations is analysed and a method of correction implemented. The diagonalisation procedure is based upon a combination of successive diagonalisation and truncation and a Lanczos diagonaliser. Using this method the wave functions of the Ar(_3) Van der Waals trimer have been calculated. The wave functions for the low-lying states show very regular behaviour. Above the barrier to linearity, most of the wave functions are irregular but some have simple nodal patterns that suggest localization along periodic orbits. In addition to the "horseshoe" states previously described for H(^+)(_3), localized features corresponding to symmetric and antisym metric stretching vibrations around a linear configuration have been identified. The different localized modes can be combined to form more complex states in a manner analogous to normal modes. A preliminary study of the rotational states of Ar(_3) has also been performed. The rotational constants for the low lying states of Ar(_3) reflect the increasing average size of Ar(_3) with increasing vibrational excitation. The rotational constants are obtained from two methods, expectation values and energy level differences. The results for the levels above the barrier to isomerisation reveal that the simple models used for obtaining the rotational constants are no longer valid and indicate that a more sophisticated treatment is necessary.
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Bryan, Robert. "Theoretical studies of Van der Waals clusters." Thesis, Durham University, 1997. http://etheses.dur.ac.uk/4712/.
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The vibrational energy levels of various rare gas trimers, Ar(_3), Ne(_3), He(_3), Ar(_2)Ne and Ne(_2)Ar, have been calculated using a coupled channel approach. We have compared results obtained with previous calculations. The existence of Efi-mov states in He(_3) has been investigated, and no evidence of their existence has been found. The affect of the Eckart conditions on embedding axis into a rotating-vibrating system has been investigated for several rare gas systems. A wide range of rare gas trimers have been studied, Ar(_3), He(_2)Ar, Ar(_2)He, Ar(_2)Ne and Ne(_2)Ar. For each trimer the full range of molecular motion is investigated. The low energy minima for the Ar(_n)N(_2) and Ne(_n)N(_2) systems have been found using simulated annealing search, and a gradient based minimisation technique, of a pairwise potential energy surface. Clusters with n ≥ 12 have been studied, and first solvation shells for both systems have been proposed. For each value of n, for n = 1 - 12, the first few low energy minima of the potential energy surface have been found. From these studies, we have gained a detailed understanding of the interplay of forces that determine the low energy structures for these systems. The affect of three-body interactions on the low energy minima both rare gas-N(_2) systems has been studied. In both system, rare gas-rare gas and rare gas- threebody interactions have been taken into account. This study has shown that the three-body forces have a small affect on the low energy structures of each system.
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Tulegenov, Akyl S. "SIMPER method for van der Waals complexes." Thesis, University of Nottingham, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.431329.
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McDowell, Sean Alistair Courtney. "Theoretical studies of Van der Waals molecules." Thesis, University of Cambridge, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.259733.
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Le, Sueur Catherine Ruth. "Induction effects in Van der Waals complexes." Thesis, University of Cambridge, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.385523.
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Willberg, Dean Michael Zewail Ahmed H. "Picosecond spectroscopy of van der Waals clusters /." Diss., Pasadena, Calif. : California Institute of Technology, 1994. http://resolver.caltech.edu/CaltechETD:etd-04042008-110156.
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Columberg, Gieri. "Mikrowellen-Spektroskopie T-förmiger Van der Waals Komplexe /." [S.l.] : [s.n.], 1996. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=11636.
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Coy, Diaz Horacio. "Preparation and Characterization of Van der Waals Heterostructures." Scholar Commons, 2016. http://scholarcommons.usf.edu/etd/6212.
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In this dissertation different van der Waals heterostructures such as graphene-MoS2 and MoTe2-MoS2 were prepared and characterized. In the first heterostructure, polycrystalline graphene was synthesized by chemical vapor deposition and transferred on top of MoS2 single crystal. In the second heterostructure, MoTe2 monolayers were deposited on MoS2 by molecular beam epitaxy.
Characterization of graphene-MoS2 heterostructures was conducted by spin and angle resolve spectroscopy which showed that the electronic structure of the bulk MoS2 and graphene in this van der Waals heterostructures is modified. For MoS2 underneath the graphene, a band structure renormalization and spin polarization are observed. The band structure of MoS2 is modified because the graphene induces screening which shifts the Г-point ~150 meV to lower binding compared to the sample without graphene. The spin polarization is explained by the dipole arising from band bending which breaks the symmetry at the MoS2 surface. For graphene, the band structure at lower binding energy shows that the Dirac cone remains intact with no significant doping. Instead, away from the Fermi level the formation of several gaps in the pi-band due to hybridization with states from the MoS2 is observed.
For the heterostructures made depositing monolayer of MoTe2 on MoS2, the morphology, structure and electronic structure were studied. Two dimensional growth is observed under tellurium rich growth conditions and a substrate temperature of 200 °C but formation of a complete monolayer was not achieved. The obtained MoTe2 monolayer shows a high density of the mirror-twins grain boundaries arranged in a pseudo periodic wagon wheel pattern with a periodicity of ~2.6 nm. These grain boundary are formed due to Te-deficiency during the growth. The defect states from these domain boundary pin the Fermi level in MoTe2 and thus determine the band alignment in the MoTe2-MoS2 heterostructures.
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Lawrence, Stuart John. "High-resolution spectroscopy of van der Waals molecules." Thesis, University of Oxford, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318824.
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Kettley, J. C. "Van der Waals complexes of large aromatic molecules." Thesis, University of Nottingham, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.371128.
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Althorpe, Stuart C. "Bound state calculations for van der Waals dimers." Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.319937.
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Ma, Qiong Ph D. Massachusetts Institute of Technology. "Optoelectronics of graphene-based Van der Waals heterostructures." Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/104523.
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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Physics, 2016.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references.<br>Research on van der Waals (vdW) materials (homo- or hetero-) is a rapidly emerging field in condensed matter physics. They are layered structures with strong chemical bonding within layers and relatively weak van der Waals force to combine layers together. This unique layer-bylayer nature makes it easy to exfoliate layers out and at the same time to re-assemble in arbitrary sequences with different combinations. The versatility, flexibility, and relatively low cost of production make the scientific community enthusiastic about their future. In this thesis, I investigate the fundamental physical processes of light-matter interactions in these layered structures, including graphene, boron nitride, transition metal dichalcogenides and heterostructures formed from these materials. My research involves state-of-the-art nanoscale fabrication and microscale photocurrent spectroscopy and imaging. In Chapter 1, 1 will briefly discuss basic physical properties of the vdW materials involved in this thesis and introduce the main nanofabrication and measurement techniques. Chapter 2-4 are about hot electron dynamics and electron-phonon coupling in intrinsic graphene systems, among which Chapter 2 is focusing on the generation mechanism of the photocurrent at the p-n interface, which is demonstrated to have a photothermoelectric origin. This indicates a weak electron-phonon coupling strength in graphene. Chapter 3 is a direct experimental follow-up of the work in Chapter 2 and reveals the dominant electron-phonon coupling mechanism at different temperature and doping regimes. In Chapter 4, I present the observation of anomalous geometric photocurrent patterns in various devices at the charge neutral point. The spatial pattern can be understood as a local photo-generated current near edges being collected by remote electrodes. The anomalous behavior as functions of change density and temperature indicates an interesting regime of energy and charge dynamics. In Chapter 5 and 6, 1 will show the photoresponse of graphene-BN heterostuctures. In graphene-BN stack directly on SiO₂, we observed strong photo-induced doping phenomenon, which can be understood as charge transfer from graphene across BN and eventually trapped at the interface between BN and SiO₂. By inserting another layer of graphene between BN and SiO₂ , we can measure an electrical current after photoexcitation due to such charge transfer. We further studied the competition between this vertical charge transfer and in-plane carrier-carrier scattering in different regimes. In Chapter 7, I will briefly summarize collaborated work with Prof. Dimitri Basov's group on near-field imaging of surface polariton in two-dimensional materials. This technique provides a complementary tool to examine the intriguing light-matter interaction (for large momentum excitations) in low-dimensional materials. Chapter 8 is the outlook, from my own point of view, what more can be done following this thesis.<br>by Qiong Ma.<br>Ph. D.
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Waage, Magnus Heskestad. "Radiative corrections to van der Waals interaction in fluids." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for fysikk, 2012. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-18872.
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The van der Waals interaction energy is derived for a homogenous fluid of polarizable particles. Low-temperature corrections to the van der Waals interaction energy are computed numerically for three cases: Dilute media with radiative interactions, arbitrarily dense media without radiative interactions, and arbitrarily dense media with radiative interactions. The validity of the model used to calculate the corrections at arbitrary densities is argued for, by comparison with the results for low densities.
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DelRio, Frank William. "Van der Waals and capillary adhesion in microelectromechanical systems." Diss., Connect to online resource, 2006. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3239374.
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Peet, Andrew Charles. "Vibrational predissociation of Van der Waals complexes containing ethylene." Thesis, University of Cambridge, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329168.
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Howson, Joanna M. M. "Obtaining potential energy surfaces of Van der Waals molecules." Thesis, Durham University, 1999. http://etheses.dur.ac.uk/4488/.
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Two different methods were used to obtain a potential energy surface for the Arco molecule. One involved choosing a functional form for the repulsion and dispersion energies whose parameters were determined by a fit to experimental data. A physically justified potential that agreed with experiment could not be obtained. The other method was based on calculating ab initio interaction energies at different configurations of the molecule and interpolating between them. The resulting surface was scaled in the energy and the co-ordinates. Improved agreement was achieved for most observed bound states. Errors in the surface may have been due to an inadequate density of ab initio energies. So, how the molecular configurations chosen for interaction energy calculations affected the potential obtained was investigated. Both the co-ordinate system and the interpolation scheme also significantly affected the quality of surface obtained. The best compromise between accuracy and number of configurations, was points distributed on a regular grid in elliptic co-ordinates with Gauss-Legendre quadrature points in the angular co-ordinate. This information was employed to obtain a potential energy surface for the weakly bound HeOCS molecule which was in close agreement with experiment. A co-ordinate and energy scaling, guided by experiment, was applied to the ab initio surface. Only three scaling parameters were required due to the high quality of the initial surface.
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Sanz-Garcia, Aranzazu. "Modelling the dispersion energy for Van der Waals complexes." Thesis, University of Nottingham, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.252013.
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Musgrave, Adam. "Electronic spectroscopy of Van der Waals clusters and complexes." Thesis, University of Nottingham, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.445684.
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Khestanova, Ekaterina. "Van der Waals heterostructures : fabrication, mechanical and electronic properties." Thesis, University of Manchester, 2018. https://www.research.manchester.ac.uk/portal/en/theses/van-der-waals-heterostructures-fabrication-mechanical-and-electronic-properties(047ce24b-7a58-4192-845d-54c7506f179f).html.
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The fast progress in the exploration of 2D materials such as graphene became possible due to development of fabrication techniques that allowed these materials to be protected from e.g. undesirable doping and gave rise to new functionalities realized within van der Waals heterostructures. Attracted by van der Waals interaction the constituent layers of such heterostructures preserve their exceptional electronic quality and for example in graphene allow for high electron mobility to be achieved. However, the studies of atomically thin layers such as NbSe2 that exhibit metallic behavior have been impeded by their reactivity and hence oxidation during exposure to ambient or oxidizing agents such as solvents. In this thesis, the existing heterostructure assembly technique was improved by the introduction of exfoliation and re-stacking by a fully motorized system placed in an inert atmosphere. This approach allowed us to overcome the problem of environmental degradation and create Hall bars and planar tunnel junctions from atomically thin superconducting NbSe2. Furthermore, this versatile approach allowed us to study the thickness dependence of the normal and superconducting state transport properties of NbSe2, uncovering the reduction of the superconducting energy gap and transition temperature in the thinnest samples. On the other hand, 2D materials being just 1-3 atoms thick represent an ultimate example of a membrane - thin but laterally extended object. Consisting of such atomically thin membranes the van der Waals heterostructures can be used for purposes other than the studies of electronic transport. In this work, ubiquitous bubbles occurring during van der Waals heterostructure assembly are employed as a tool to explore 2D materials' mechanical properties and mutual adhesion. This allowed us to measure Young's modulus of graphene and other 2D materials under 1-2% strain and deduce the internal pressure that can reach up to 1 GPa in sub-nanometer size bubbles.
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Schofield, Robert Christopher. "Raman studies of 2-dimensional van der Waals materials." Thesis, University of Sheffield, 2018. http://etheses.whiterose.ac.uk/21313/.
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Presented herein are results of optical studies with emphasis on the Raman response, providing significant contribution to the knowledge of the field. In Mox W(1−x) S2 , confirmation of the behaviour of the excitonic properties is made. Raman measurements performed in this system allow investigation with unprecedented resolution, highlighting deviations in the high frequency A1g optical phonon mode from theoretical predictions, and previous experimental studies. In the low frequency, data confirms the trends in the shear and breathing interlayer modes in alloys between WS2 and MoS2 are well described by the modification in the square density. Resonant excitation for [Mo] < 0.4, highlights new evidence for the understanding of the hitherto unexplained ‘Peak X’ resonant feature. Diverse indium-selenium compounds isolated by novel means are studied. The ULF Raman modes of PDMS exfoliated InSe are documented for the first time, demonstrating the ε-phase with ABA stacking, with flake of thickness N manifesting (N − 1) shear modes owing to resonant excitation of few layer samples. InSe flakes encapsulated in hexagonal boron nitride manifest different stacking orders to those of PDMS exfoliated InSe, and were found to have significant contamination, with crystalline degradation of the monolayer flake, and peaks corresponding N2 & O2 rotational modes present. In2Se3 films grown epitaxially on GaSe display substrate-selective polymorphism, where α-, β-, & γ- phases are identified, in addition to regions of InSe. Laser photo-annealing is shown to drive a phase change from the groundstate β → α phase, which is against the thermodynamic gradient. MoSe2/WS2 twisted hetero-bi-layer structures are studied, where shear modes showing a linear softening from AA′ stacking towards the AB at 60° indicating reduced interlayer coupling, as expected from the difference in interlayer spacing of AA′ and AB ordering. High frequency modes in the heterobilayer also demonstrate some sensitivity in the relative angle, and are analysed in detail.
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David, Lamuel Abraham. "Van der Waals sheets for rechargeable metal-ion batteries." Diss., Kansas State University, 2015. http://hdl.handle.net/2097/32796.
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Doctor of Philosophy<br>Department of Mechanical and Nuclear Engineering<br>Gurpreet Singh<br>The inevitable depletion of fossil fuels and related environmental issues has led to exploration of alternative energy sources and storage technologies. Among various energy storage technologies, rechargeable metal-ion batteries (MIB) are at the forefront. One dominant factor affecting the performance of MIB is the choice of electrode material. This thesis reports synthesis of paper like electrodes composed for three representative layered materials (van der Waals sheets) namely reduced graphene oxide (rGO), molybdenum disulfide (MoS₂) and hexagonal boron nitride (BN) and their use as a flexible negative electrode for Li and Na-ion batteries. Additionally, layered or sandwiched structures of vdW sheets with precursor-derived ceramics (PDCs) were explored as high C-rate electrode materials.
Electrochemical performance of rGO paper electrodes depended upon its reduction temperature, with maximum Li charge capacity of 325 mAh.g⁻¹ observed for specimen annealed at 900°C. However, a sharp decline in Na charge capacity was noted for rGO annealed above 500 °C. More importantly, annealing of GO in NH₃ at 500 °C showed negligible cyclability for Na-ions while there was improvement in electrode's Li-ion cycling performance. This is due to increased level of ordering in graphene sheets and decreased interlayer spacing with increasing annealing temperatures in Ar or reduction at moderate temperatures in NH₃. Further enhancement in rGO electrodes was achieved by interfacing exfoliated MoS₂ with rGO in 8:2 wt. ratios. Such papers showed good Na cycling ability with charge capacity of approx. 225.mAh.g⁻¹ and coulombic efficiency reaching 99%.
Composite paper electrode of rGO and silicon oxycarbide SiOC (a type of PDC) was tested as high power-high energy anode material. Owing to this unique structure, the SiOC/rGO composite electrode exhibited stable Li-ion charge capacity of 543.mAh.g⁻¹ at 2400 mA.g⁻¹ with
nearly 100% average cycling efficiency. Further, mechanical characterization of composite papers revealed difference in fracture mechanism between rGO and 60SiOC composite freestanding paper. This work demonstrates the first high power density silicon based PDC/rGO composite with high cyclic stability.
Composite paper electrodes of exfoliated MoS₂ sheets and silicon carbonitride (another type of PDC material) were prepared by chemical interfacing of MoS₂ with polysilazane followed by pyrolysis . Microscopic and spectroscopic techniques confirmed ceramization of polymer to ceramic phase on surfaces on MoS₂. The electrode showed classical three-phase behavior characteristics of a conversion reaction. Excellent C-rate performance and Li capacity of 530 mAh.g⁻¹ which is approximately 3 times higher than bulk MoS₂ was observed. Composite papers of BN sheets with SiCN (SiCN/BN) showed improved electrical conductivity, high-temperature oxidation resistance (at 1000 °C), and high electrochemical activity (~517 mAh g⁻¹ at 100 mA g⁻¹) toward Li-ions generally not observed in SiCN or B-doped SiCN. Chemical characterization of the composite suggests increased free-carbon content in the SiCN phase, which may have exceeded the percolation limit, leading to the improved conductivity and Li-reversible capacity.
The novel approach to synthesis of van der Waals sheets and its PDC composites along with battery cyclic performance testing offers a starting point to further explore the cyclic performance of other van der Waals sheets functionalized with various other PDC chemistries.
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Gée, Christelle. "Reactions chimiques isolees sur agregats de van der waals." Paris 11, 1997. http://www.theses.fr/1997PA112092.
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Cette these porte sur l'etude des collisions reactives ou non reactives en presence d'un milieu materiel: un agregat forme de plusieurs centaines d'atomes ou molecules. L'agregat par sa taille finie permet d'isoler un couple de reactifs qui peuvent migrer sur l'agregat, entrer en collision et eventuellement declencher une reaction chimique. Notre dispositif experimental permet de generer un faisceau d'agregats homogenes (d'argon, de methane et d'azote) et d'y deposer les reactifs en faible quantite, par une technique collisionnelle. Nous etudions ces reactions chimiques isolees a la fois par des diagnostics optiques et par spectrometrie de masse. Les travaux realises sur les systemes reactionnels (ba/n#2o), (ba/co#2), (ba/sf#6) et (ba/ch#4) font appel a une technique d'analyse introduite dans cette these: la methode c. I. C. R. Acronyme de cluster isolated chemical reaction. Sa puissance reside dans la capacite a isoler une reaction sur un agregat pour en determiner la stoechiometrie. Nous avons suivi 2 orientations dans cette these. La premiere orientation porte sur l'effet de solvatation en observant l'influence de l'agregat sur une reaction chimique. L'agregat est parfois spectateur (reaction ba+n#2o), mais il peut aussi perturber considerablement, voire inhiber la reaction comme pour les paires 1 ba+1 sf#6 et 1 ba+1 co#2 ou l'agregat bloque la reaction en voie d'entree. Le deuxieme theme aborde est la reactivite de petits agregats de baryum. Nous avons etudie l'evolution de leur reactivite en fonction de leur taille et du caractere oxydo/reducteur du reactif moleculaire (cl#2, n#2o, o#2, co#2, sf#6, ch#4). A cette occasion, l'etude des systemes ba#2+co#2 et ba#2+n#2o a permis d'assigner un spectre de chimiluminescence jusque la non assigne: celui de ba#2o. La technique c. I. C. R. A montre toute sa force sur cet exemple en permettant l'identification du produit de reaction grace a la comprehension de la stoechimetrie de la reaction
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Yu, Geliang. "Transport properties of graphene based van der Waals heterostructures." Thesis, University of Manchester, 2015. https://www.research.manchester.ac.uk/portal/en/theses/transport-properties-of-graphene-based-van-der-waals-heterostructures(5cbb782f-4d49-42da-a05e-15b26606e263).html.
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In the past few years, led by graphene, a large variety of two dimensional (2D) materials have been discovered to exhibit astonishing properties. By assembling 2D materials with different designs, we are able to construct novel artificial van der Waals (vdW) heterostructures to explore new fundamental physics and potential applications for future technology. This thesis describes several novel vdW heterostructures and their fundamental properties. At the beginning, the basic properties of some 2D materials and assembled vdW heterostructures are introduced, together with the fabrication procedure and transport measurement setups. Then the graphene based capacitors on hBN (hexagonal Boron Nitride) substrate are studied, where quantum capacitance measurements are applied to determine the density of states and many body effects. Meanwhile, quantum capacitance measurement is also used to search for alternative substrates to hBN which allow graphene to exhibit micrometer-scale ballistic transport. We found that graphene placed on top of MoS2 and TaS2 show comparable mobilities up to 60,000cm2/Vs. After that, the graphene/hBN superlattices are studied. With a Hall bar structure based on the superlattices, we find that new Dirac minibands appear away from the main Dirac cone with pronounced peaks in the resistivity and are accompanied by reversal of the Hall effects. With the capacitive structure based on the superlattices, quantum capacitance measurement is used to directly probe the density states in the graphene/hBN superlattices, and we observe a clear replica spectrum, the Hofstadter-butterfly fan diagram, together with the suppression of quantum Hall Ferromagnetism. In the final part, we report on the existence of the valley current in the graphene/hBN superlattice structure. The topological current originating from graphene’s two valleys flows in opposite directions due to the broken inversion symmetry in the graphene/hBN superlattice, meaning an open band gap in graphene.
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Gani, Yohanes Satrio. "Electronic Properties of Two-Dimensional Van Der Waals Systems." W&M ScholarWorks, 2019. https://scholarworks.wm.edu/etd/1563899012.
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In this dissertation we study the electronic structure of van der Waals systems. A van der Waals systems is a heterostructure in which the different constituents are held together by van der Waals forces. We study two different types of van der Waals systems: van der Waals systems formed by graphene and a monolayer of NbSe2, van der Waals systems obtained by placing graphene nanoribbons on a two-dimensional crystal. For the first type of systems we build a continuous low-energy effective model that takes into account the presence of a twist angle between graphene and NbSe2, and of spin-orbit coupling and superconducting pairing in NbSe2. We then obtain how the superconducting pairing induced by proximity into the graphene layer depends on the twist angle. For the second type of systems we obtain using ab-initio methods the electronic structure of graphene nanoribbons placed on hexagonal boron nitride, and of graphene nanoribbons placed on monolayers of transition metal dichalcogenide. For both cases we show how the electronic structure depends on the stacking configuration.
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Tomarken, Spencer Louis. "Thermodynamic and tunneling measurements of van der Waals heterostructures." Thesis, Massachusetts Institute of Technology, 2019. https://hdl.handle.net/1721.1/123567.
Full textAbstract:
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Physics, 2019<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 201-212).<br>In certain electronic systems, strong Coulomb interactions between electrons can favor novel electronic phases that are difficult to anticipate theoretically. Accessing fundamental quantities such as the density of states in these platforms is crucial to their analysis. In this thesis, I explore the application of two measurement techniques towards this goal: capacitance measurements that probe the thermodynamic ground state of an electronic system and planar tunneling measurements that access its quasiparticle excitation spectrum. Both techniques were applied to van der Waals materials, a class of crystals composed of layered atomic sheets with weak interplane bonding which permits the isolation of single and few-layer sheets that can be manually assembled into heterostructures. Capacitance measurements were performed on a material system commonly known as magic-angle twisted bilayer graphene (MATBG).<br>When two monolayers of graphene, a single sheet of graphite, are stacked on top of one another with a relative twist between their crystal axes, the resultant band structure is substantially modified from the cases of both monolayer graphene and Bernal-stacked (non-twisted) bilayer graphene. At certain magic angles, the low energy bands become extremely flat, quenching the electronic kinetic energy and allowing strong electron-electron interactions to become relevant. Exotic insulating and superconducting phases have been observed using conventional transport measurements. By accessing the thermodynamic density of states of MATBG, we estimate its low energy bandwidth, Fermi velocity, and interaction-driven energy gaps. Time-domain planar tunneling was performed on a heterostructure that consisted of monolayer graphene and hexagonal boron nitride (serving as the dielectric and tunnel barrier) sandwiched between a graphite tunneling probe and metal gate.<br>Tunneling currents were induced by applying a sudden voltage pulse across the full parallel plate structure. The lack of in-plane charge motion allowed access to the tunneling density of states even when the heterostructure was electrically insulating in the quantum Hall regime. These measurements represent the first application of time-domain planar tunneling to the van der Waals class of materials, an important step in extending the technique to new material platforms.<br>by Spencer Louis Tomarken.<br>Ph. D.<br>Ph.D. Massachusetts Institute of Technology, Department of Physics
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Henck, Hugo. "Hétérostructures de van der Waals à base de Nitrure." Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLS319/document.
Full textAbstract:
Le sujet de cette thèse est à l’interface entre l’étude de composés à base de nitrure et des structures émergeantes formées par les matériaux bidimensionnels (2D) d’épaisseur atomique. Ce travail se consacre sur l’hybridation des propriétés électriques et optiques des semi-conducteurs à larges bandes interdites que sont les nitrures et des performances mécaniques, électriques et optiques des matériaux lamellaires, récemment isolé à l’échelle d’un plan atomique, qui sont aujourd’hui considérées avec attention aux regards de futures applications et d’études plus fondamentales. En particulier, une étude des propriétés électroniques, optiques et structurelles d’hétérostructures composées de plusieurs matériaux lamellaires et d’interfaces entre matériaux 2D et 3D a été réalisé par des moyens de microscopie et de spectroscopie tel que la spectroscopie Raman, de photoémission et d’absorption.Ce manuscrit traite dans un premier temps des propriétés structurelles et électroniques du nitrure de bore hexagonal (h-BN), matériau isolant aux propriétés optiques exotiques et essentiel dans la future intégration de ce type de matériaux 2D permettant de mettre en valeur leurs propriétés intrinsèques.En utilisant le graphène comme substrat les problèmes de mesures par photoémission rencontrés pour des matériaux isolant ont pu être surmonté dans le cas du h-BN et une étude des défauts structurels a pu être réalisée. Par conséquent, les premières mesures directes de la structure de bande électronique de plusieurs plans de h-BN sont présentées dans ce manuscrit.Dans un second temps, une approche d’intégration de ces matériaux 2D différente a été étudiée en formant une hétérostructure 2D/3D. L’interface de cette hétérojonction, composée d’un plan de disulfure de molybdène (MoS2) de dopage intrinsèque N associé à 300 nm de nitrure de gallium (GaN) intentionnellement dopé P à l’aide de magnésium, a été caractérisée. Un transfert de charge du GaN vers le MoS2 a pu être identifié suggérant un contrôle des propriétés électroniques de ce type de structure par le choix de matériaux.Ces travaux ont permis de révéler les diagrammes de bandes électroniques complet des structures étudiées a pu être obtenu permettant une meilleur compréhension de ces systèmes émergeants<br>This thesis is at the interface between the study of nitride based compounds and the emerging structures formed by atomically thin bi-dimensional (2D) materials. This work consists in the study of the hybridization of the properties of large band gap materials from the nitride family and the mechanical, electronic and optical performances of layered materials, recently isolated at the monolayer level, highly considered due to their possible applications in electronics devices and fundamental research. In particular, a study of electronics and structural properties of stacked layered materials and 2D/3D interfaces have been realised with microscopic and spectroscopic means such as Raman, photoemission and absorption spectroscopy.This work is firstly focused on the structural and electronic properties of hexagonal boron nitride (h-BN), insulating layered material with exotic optical properties, essential in in the purpose of integrating these 2D materials with disclosed performances. Using graphene as an ideal substrate in order to enable the measure of insulating h-BN during photoemission experiments, a study of structural defects has been realized. Consequently, the first direct observation of multilayer h-BN band structure is presented in this manuscript. On the other hand, a different approach consisting on integrating bi-dimensional materials directly on functional bulk materials has been studied. This 2D/3D heterostructure composed of naturally N-doped molybdenum disulphide and intentionally P-doped gallium nitride using magnesium has been characterised. A charge transfer from GaN to MoS2 has been observed suggesting a fine-tuning of the electronic properties of such structure by the choice of materials.In this work present the full band alignment diagrams of the studied structure allowing a better understanding of these emerging systems
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Scheele, Iris. "Hochauflösende Infrarot-Spektroskopie an schwach gebundenen Van-der-Waals-Systemen." [S.l.] : [s.n.], 2001. http://deposit.ddb.de/cgi-bin/dokserv?idn=963558668.
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Quayle, Christopher John Kendrick. "Alignment effects in the photodissociation of van der Waals molecules." Thesis, University of Oxford, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.357431.
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Luo, Yuanhong Ph D. Massachusetts Institute of Technology. "Twist angle physics in graphene based van der Waals heterostructures." Thesis, Massachusetts Institute of Technology, 2018. http://hdl.handle.net/1721.1/119050.
Full textAbstract:
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Physics, 2018.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Cataloged student-submitted from PDF version of thesis.<br>Includes bibliographical references (pages 121-131).<br>In this thesis, I present my experimental work on twisted bilayer graphene, a van der Waals heterostructure consisting of two graphene sheets stack on top of each other. In particular, the twist angle is a new degree of freedom in this system, and has an important effect in the determination of its transport properties. The work presented will explore the twist-dependent physics in two regimes: the large twist angle and small twist angle regimes. In the large-twist angle limit, the two sheets have little interlayer interactions and are strongly decoupled, allowing us to put independent quantum Hall edge modes in both layers. We study the edge state interactions in this system, culminating in the formation of a quantum spin Hall state in twisted bilayer graphene. In the small twist angle limit, interlayer interactions are strong and the layers are strongly hybridized. Additionally, a new long-range moiré phenomenon emerges, and we study the effects of the interplay between moiré physics and interlayer interactions on its transport properties.<br>by Yuanhong Luo.<br>Ph. D.
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Yankowitz, Matthew Abraham. "Local Probe Spectroscopy of Two-Dimensional van der Waals Heterostructures." Diss., The University of Arizona, 2015. http://hdl.handle.net/10150/594649.
Full textAbstract:
A large family of materials, collectively known as "van der Waals materials," have attracted enormous research attention over the past decade following the realization that they could be isolated into individual crystalline monolayers, with charge carriers behaving effectively two-dimensionally. More recently, an even larger class of composite materials has been realized, made possible by combining the isolated atomic layers of different materials into "van der Waals heterostructures," which can exhibit electronic and optical behaviors not observed in the parent materials alone. This thesis describes efforts to characterize the atomic-scale structural and electronic properties of these van der Waals materials and heterostructures through scanning tunneling microscopy measurements. The majority of this work addresses the properties of monolayer and few-layer graphene, whose charge carriers are described by massless and massive chiral Dirac Hamiltonians, respectively. In heterostructures with hexagonal boron nitride, an insulating isomorph of graphene, we observe electronic interference patterns between the two materials which depend on their relative rotation. As a result, replica Dirac cones are formed in the valence and conduction bands of graphene, with their energy tuned by the rotation. Further, we are able to dynamically drag the graphene lattice in these heterostructures, owing to an interaction between the scanning probe tip and the domain walls formed by the electronic interference pattern. Similar dragging is observed in domain walls of trilayer graphene, whose electronic properties are found to depend on the stacking configuration of the three layers. Scanning tunneling spectroscopy provides a direct method for visualizing the scattering pathways of electrons in these materials. By analyzing the scattering, we can directly infer properties of the band structures and local environments of these heterostructures. In bilayer graphene, we map the electrically field-tunable band gap and extract electronic hopping parameters. In WSe₂, a semiconducting transition metal dichalcogenide, we observe spin and layer polarizations of the charge carriers, representing a coupling of the spin, valley and layer degrees of freedom.
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Matope, Stephen. "Application of Van-der-Waals forces in micro-material handling." Thesis, Stellenbosch : Stellenbosch University, 2012. http://hdl.handle.net/10019.1/71608.
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Thesis (PhD)--Stellenbosch University, 2012.<br>This doctoral dissertation focuses on the application of Van-der-Waals’ forces in micromaterial
handling. A micro-material handling system consists of four main elements, which
include: the micro-gripper, the micro-workpart, the picking up position and the placement
position. The scientific theoretical frameworks of Van-der-Waals’ forces, presented by Van
der Waals, Hamaker, London, Lifshitz, Israelachvilli, Parsegian, Rumpf and Rabinovich, are
employed in exploring the extent to which these forces could be applied in a micromanufacturing
situation. Engineering theoretical frameworks presented by Fearing,
Bohringer, Sitti, Feddema, Arai and Fukuda, are employed in order to provide an in-depth
synthesis of the application of Van-der-Waals’ forces in micro-material handling. An
empirical or pragmatic methodology was adopted in the research.
The Electron Beam Evaporation (e-beam) method was used in generating interactive surfaces
of uniform surface roughness values. E-beam depositions of copper, aluminum and silver on
silicon substrates were developed. The deposition rates were in the range of 0.6 – 1.2
Angstrom/s, at an average vacuum pressure of 2 x 10-6 mbar. The topographies were analysed
and characterised using an Atomic Force Microscope and the corresponding rms surface
roughness values were obtained. The Rumpf-Rabinovich equation, which gives the
relationship of the exerted Van-der-Waals’ forces and the rms surface roughness values, is
used to numerically model the results. In the final synthesis it is observed that the e-beam
depositions of copper are generally suited for the pick-up position. Aluminum is suited for the
micro-gripper and silver is suited for the placement position in an optimised micro-material
handling system.
Another Atomic Force Microscope was used in order to validate the numerically modelled
results of the exerted Van- der-Waals’ forces. The aim was to measure the magnitude of Vander-
Waals’ forces exerted by the e-beam depositions and to evaluate their applicability in
micro-material handling operations. The measurements proved that Van-der-Waals’ forces
exerted by the samples could be used for micro-material handling purposes on condition that
they exceeded the weight of the micro-part being handled.
Three fundamental parameters, ie: material type, geometrical configuration and surface
topography were used to develop strategies of manipulation of micro-materials by Van-der-
Waals’ forces. The first strategy was based on the material type variation of the interactive surfaces in a micro-material handling operation. This strategy hinged on the fact that materials
have different Hamaker coefficients, which resulted in them experiencing a specific Van-der-
Waals’ forces’ intensity during handling. The second strategy utilised variation in the
geometrical configuration of the interacting surfaces. The guiding principle in this case was
that, the larger the contact area was, the greater the exerted Van-der-Waals’ forces would be
In the analytical modelling of Van-der-Waals’ forces with reference to geometrical
configuration, a flat surface was found to exert more force than other configurations. The
application of the design, for purposes of manufacturing and assembling (DFMA) criteria,
also proved that flat interactive surfaces have high design efficiency. The third strategy was
based on surface roughness. The rougher the topography of a given surface was, the lesser the
Van-der-Waals’ forces exerted were. It was synthesised that in order for a pick-transfer-place
cycle to be realised, the root-mean-square (rms) interactive surface roughness values of the
micro-part (including the picking position, the micro-gripper, and the placement position)
should decrease successively. Hybrid strategies were also identified in this research in order
to deal with some complex cases. The hybrids combined at least two of the aforementioned
strategies.
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Economides, George. "Investigations of open-shell open-shell Van der Waals complexes." Thesis, University of Oxford, 2013. http://ora.ox.ac.uk/objects/uuid:e27330e0-2eaa-4181-af30-70e8b7a3a692.
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The question posed in this work is how one would model and predict the rotational spectrum of open-shell open-shell van der Waals complexes. There are two secondary questions that arise: the nature of radical-radical interactions in such systems and the modelling of the large amplitude motion of the constituent molecules. Four different systems were studied in this work, each providing part of the answer to the main question. Starting with the large amplitude motion, there are two theoretical approaches that may be adopted: to either model the whole complex as a semi-rigid molecule, or to perform quantum dynamical calculations. We recorded and analysed the rotational spectrum (using Fourier transform microwave spectroscopy) of the molecule of tertiary butyl acetate (TBAc) which exhibits a high degree of internal rotation; and of the weakly-bound complex between a neon atom and a nitrogen dioxide molecule (Ne-NO2). We used the semi-rigid approach for TBAc and the quantum dynamical approach for Ne-NO2. We also explored the compatibility of these two approaches. Moreover, we were able to predict and analyse the fine and hyperfine structure of the Ne-NO2 spectrum using spherical tensor operator algebra and the results of our dynamics calculations. To explore the nature of the interactions in an radical-radical van der Waals complex we calculated the PESs of the possible states that the complex may be formed in, when an oxygen and a nitrogen monoxide molecule meet on a plane using a number of high level ab initio methods. Finally, our conclusions were tested and applied when we performed the angular quantum dynamics to predict the rotational spectrum of the complex between an oxygen and a nitrogen dioxide molecule, and account for the effect of nuclear spin statistics in that system.
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Dhont, Guillaume. "Spectroscopie Renner-Teller dans des complexes van der Waals chargés." Université de Marne-la-Vallée, 2003. http://www.theses.fr/2003MARN0175.
Full textAbstract:
Les complexes de van der Waals formés d'une diatomique à couche ouverte et d'un atome de gaz rare offrent une diversité de types de liaison et de dynamique bien plus large que les complexes à couche fermée. Pour les diatomiques dans un état électronique à moment angulaire non nul, la situation se complique par l'effet Renner-Teller qui nécessite de prendre en compte simultanément deux fonctions d'énergie potentielle. Les hamiltoniens permettant l'étude quantique de ces systèmes sont présentés dans deux systèmes d'axes liés à la molécule. Chaque orientation du repère possède un modèle sous-jacent : dans un cas, le mouvement de rotation de la diatomique est perturbé par la présence de l'atome de gaz rare, l'autre cas est bien adapté à une analyse du complexe comme une molécule triatomique quasi-rigide. Un nouveau programme permettant le calcul variationnel des états rovibroniques a été développé pour chaque sytème d'axes. Les fonctions d'énergie potentielle bi- et tri-dimensionnelle de l'état électronique fondamental et du premier état excité de HeHCl+ ont été déterminées. Ces calculs ont montré que le mouvement de rotation de la diatomique est relativement peu gêné. Pour HeHF+, les premiers états rovibroniques de ce système peuvent, au contraire, être interprétés dans le cadre de l'effet Renner-Teller d'une triatomique quasi-rigide. La profondeur de puits des fonctions d'énergie potentielle de ArNH- est intermédiaire entre HeHCl+ et HeHF+, mais sa dynamique se rapproche beaucoup de celle de HeHF+. Des surfaces tridimensionnelles de moment dipolaire et de moment dipolaire de transition ont aussi été calculées pour le système HeHCl+ et des expressions analytiques sont présentées.