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Journal articles on the topic 'Epitaxy. Thin films. Silicon crystals'

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Published: 4 June 2021

Last updated: 10 February 2022

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1

Bai, G. R., H. L. M. Chang, C. M. Foster, Z. Shen, and D. J. Lam. "The relationship between the MOCVD parameters and the crystallinity, epitaxy, and domain structure of PbTiO3 films." Journal of Materials Research 9, no. 1 (January 1994): 156–63. http://dx.doi.org/10.1557/jmr.1994.0156.

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Lead- and titanium-based oxide thin films were prepared by the metal-organic chemical vapor deposition technique (MOCVD) and the relationship between the film structures and the processing parameters, such as the ratio of Pb/Ti precursors in the gas phase, substrate materials, substrate surface orientation, and growth temperature, was systematically studied. It was found that whether a single-phase stoichiometric PbTiO3 film could be obtained depended on both the Pb/Ti precursor ratio in the gas phase and the deposition temperature. Under appropriate conditions, stoichiometric PbTiO3, films could be obtained on all the substrates including silicon, MgO, α-Al2O3, SrTiO3, and LaAlO3. The PbTiO3 films grown on silicon substrates were always polycrystalline, whereas epitaxial PbTiO3 films were obtainable on all the other substrates. For epitaxial PbTiO3 films, the epitaxial relationship, crystallinity, and domain structures were found to be a function of both the substrate materials and surface orientation as well as the deposition temperature. X-ray rocking curves (ω scan) of the (100) and (001) planes of PbTiO3 epitaxial film and PbTiO3 single crystal revealed the inherent nature of the domain structures in PbTiO3.

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2

Berti, M., G. Mazzi, L. Calcagnile, A. V. Drigo, P. G. Merli, and A. Migliori. "Composition and structure of Si–Ge layers produced by ion implantation and laser melting." Journal of Materials Research 6, no. 10 (October 1991): 2120–26. http://dx.doi.org/10.1557/jmr.1991.2120.

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Si samples (001) oriented have been implanted with 101774Ge/cm2 (17.7 at. % maximum Ge concentration) and then pulse annealed with either ruby or excimer (XeCl) lasers in the energy density range from 0.1 to 1.5 J/cm2. Compositional and structural characterization has been performed showing that for both laser wavelengths the final product of the annealing process is a single crystal characterized by a surface layer about 150 nm thick whose composition is Si0.9Ge0.1. While after ruby laser irradiations defects are present even in the fully recrystallized samples, after XeCl irradiations good strained layers in epitaxy to the underlying silicon crystals and free from misfit dislocations are produced. Structural characterization of the regrown films indicates that the governing factor for the recovery of the crystalline quality and for the “building up of strain” is the state of the implantation “end-of-range defect” layer. When this defected layer is not melted, textured columnar grains are formed. Upon melting of the end-of-range defect layer, a single crystal epitaxial layer under compressive strain is formed.

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3

Kim, Hyun Jung, Yeonjoon Park, Hyung Bin Bae, and Sang H. Choi. "High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets." Advances in Condensed Matter Physics 2015 (2015): 1–9. http://dx.doi.org/10.1155/2015/785415.

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High-quality strain-relaxed SiGe films with a low twin defect density, high electron mobility, and smooth surface are critical for device fabrication to achieve designed performance. The mobilities of SiGe can be a few times higher than those of silicon due to the content of high carrier mobilities of germanium (p-type Si: 430 cm2/V·s, p-type Ge: 2200 cm2/V·s, n-type Si: 1300 cm2/V·s, and n-type Ge: 3000 cm2/V·s at 1016per cm3doping density). Therefore, radio frequency devices which are made with rhombohedral SiGe onc-plane sapphire can potentially run a few times faster than RF devices on SOS wafers. NASA Langley has successfully grown highly ordered single crystal rhombohedral epitaxy using an atomic alignment of the[111]direction of cubic SiGe on top of the[0001]direction of the sapphire basal plane. Several samples of rhombohedrally grown SiGe onc-plane sapphire show high percentage of a single crystalline over 95% to 99.5%. The electron mobilities of the tested samples are between those of single crystals Si and Ge. The measured electron mobility of 95% single crystal SiGe was 1538 cm2/V·s which is between 350 cm2/V·s (Si) and 1550 cm2/V·s (Ge) at 6 × 1017/cm3doping concentration.

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4

La Via, F., G. Litrico, R. Anzalone, A. Severino, M. Salanitri, and S. Coffa. "High growth rate 3C-SiC growth: from hetero-epitaxy to homo-epitaxy." MRS Advances 1, no. 54 (2016): 3643–47. http://dx.doi.org/10.1557/adv.2016.338.

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Abstract 3C-SiC devices are hampered by a high crystal defect density due to the hetero-epitaxial growth of these films, which results in the presence of stacking faults (SF). In this paper high growth rate CVD processes have been used to try to reduce the SF density in 3C-SiC films. In a first step a high growth rate (30 μm/h) has been used to grow 50 μm thick 3C-SiC layer on (100) Si. Then the silicon substrate was removed via etching and a further 3C-SiC growth was performed with a higher growth rate (90 μm/h) at a higher temperature (1600 °C) to obtain a final thickness of 150 μm. The SF presence and density were evaluated by TEM analysis performed on as-grown samples and SEM analysis on KOH etched samples with various thicknesses. A decrease of SF density was observed with an increase of 3C-SiC film thickness, with the best results (500/cm) obtained for the thickest sample. The 3C-SiC film quality and orientation was evaluated by XRD are correlated with film thickness and SF density.

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5

Chen, Qianwang, Yitai Qian, Zuyao Chen, Wenbin Wu, Zhiwen Chen, Guien Zhou, and Yuheng Zhang. "Hydrothermal epitaxy of highly oriented TiO2 thin films on silicon." Applied Physics Letters 66, no. 13 (March 27, 1995): 1608–10. http://dx.doi.org/10.1063/1.113867.

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6

Yu, Z., J. Ramdani, J. A. Curless, J. M. Finder, C. D. Overgaard, R. Droopad, K. W. Eisenbeiser, et al. "Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 18, no. 3 (2000): 1653. http://dx.doi.org/10.1116/1.591445.

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7

Giussani, Alessandro, Karthick Perumal, Michael Hanke, Peter Rodenbach, Henning Riechert, and Raffaella Calarco. "On the epitaxy of germanium telluride thin films on silicon substrates." physica status solidi (b) 249, no. 10 (September 13, 2012): 1939–44. http://dx.doi.org/10.1002/pssb.201200367.

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8

Veuillen, J. ‐Y, C. d’Anterroches, and T. A. Nguyen Tan. "Growth of silicon thin films on erbium silicide by solid phase epitaxy." Journal of Applied Physics 75, no. 1 (January 1994): 223–26. http://dx.doi.org/10.1063/1.355887.

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9

Vlaskina, S. I., S. P. Kruchinin, E. Ya Kuznetsova, V. E. Rodionov, G. N. Mishinova, and G. S. Svechnikov. "Nanostructures in silicon carbide crystals and films." International Journal of Modern Physics B 30, no. 13 (May 19, 2016): 1642019. http://dx.doi.org/10.1142/s0217979216420194.

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Phase transformations of SiC crystals with grown original defects and thin films have been presented. The SiC crystals were grown by the Tairov method and the films were obtained by the “sandwich” and Chemical Vapor Deposition (CVD) methods.The analysis of absorption spectra, excitation spectra and low-temperature photoluminescence spectra testifies to the formation of a new microphase during the growth. The complex spectrum can be decomposed into similar structure-constituting spectra shifted on the energy scale relative to the former. Such spectra are indicators of the formation of new nanophases.The joint consideration of photoluminescence spectra, excitement photoluminescence spectra and absorption spectra testifies to the uniformity of different spectra and the autonomy of each of them. Structurally, the total complexity spectra correlate with the degree of disorder (imperfection) of the crystal and are related to the peculiarities of a defective performance such as a one-dimensional disorder. Three different types of spectra have three different principles of construction and behavior.

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10

Pezoldt, Jörg, Rolf Grieseler, Thorsten Schupp, Donat J. As, and Peter Schaaf. "Mechanical Properties of Cubic SiC, GaN and AlN Thin Films." Materials Science Forum 717-720 (May 2012): 513–16. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.513.

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Cubic polytypes of SiC, GaN and AlN were grown on silicon by molecular beam epitaxy. The mechanical properties of the epitaxial layers were investigated by nanoindentation. For 3C-SiC grown on Si(111) and Si(100) a dependence of the mechanical properties on the surface preparation with germanium prior to the carbonization was obtained.

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11

Kim, Min Su, Kwang Gug Yim, Do Yeob Kim, Soaram Kim, Giwoong Nam, Sung-O. Kim, Dong-Yul Lee, and Jae-Young Leem. "ZnO Thin Films Grown on Porous Silicon by Plasma-Assisted Molecular Beam Epitaxy." Japanese Journal of Applied Physics 51 (February 20, 2012): 035502. http://dx.doi.org/10.1143/jjap.51.035502.

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12

Nishizawa, Jun-ichi, Toru Kurabayashi, Toru Oizumi, Akihiko Murai, and Takashi Yoshida. "Doping Technology for Silicon Thin Films Grown by Temperature-Modulation Molecular Layer Epitaxy." Journal of The Electrochemical Society 149, no. 7 (2002): G399. http://dx.doi.org/10.1149/1.1481531.

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13

Kim, Min Su, Kwang Gug Yim, Do Yeob Kim, Soaram Kim, Giwoong Nam, Sung-O. Kim, Dong-Yul Lee, and Jae-Young Leem. "ZnO Thin Films Grown on Porous Silicon by Plasma-Assisted Molecular Beam Epitaxy." Japanese Journal of Applied Physics 51, no. 3R (March 1, 2012): 035502. http://dx.doi.org/10.7567/jjap.51.035502.

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14

Mohajerzadeh, S., C. R. Selvakumar, D. E. Brodie, M. D. Robertson, and J. M. Corbett. "A low-temperature ion vapor deposition technique for silicon and silicon–germanium epitaxy." Canadian Journal of Physics 74, S1 (December 1, 1996): 69–73. http://dx.doi.org/10.1139/p96-835.

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Ion beam vapor deposition is a new technique to grow Si and SiGe layers on Si substrates at low temperatures. The growth of Si and SiGe layers reported in this paper involves ion-assisted dissociation of SiH4 into Si and H2 where Si is deposited. The Ge incorporation is achieved through thermal co-evaporation of elemental Ge. The SiGe films deposited at temperatures below 350 °C are planar and epitaxially grown, as confirmed by Rutherford back scattering, transmission electron microscopy, and electron diffraction analysis. The in situ cleaning is achieved by Ar ion bombardment followed by an in situ thermal annealing to repair the damage. Polycrystalline SiGe films are also deposited on substrate surfaces coated with a thin oxide.

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15

Ghorbanpour, Arian, Luke D. Huelsenbeck, Detlef-M. Smilgies, and Gaurav Giri. "Oriented UiO-66 thin films through solution shearing." CrystEngComm 20, no. 3 (2018): 294–300. http://dx.doi.org/10.1039/c7ce01801k.

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16

Wei, Lanhua, Mark Vaudin, Cheol Song Hwang, Grady White, Jason Xu, and Andrew J. Steckl. "Heat conduction in silicon thin films: Effect of microstructure." Journal of Materials Research 10, no. 8 (August 1995): 1889–96. http://dx.doi.org/10.1557/jmr.1995.1889.

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A study was made of the thermal properties of low pressure chemical vapor deposition (LPCVD) silicon thin films with amorphous and polycrystalline microstructures, produced by varying the substrate temperature. Thermal diffusivity measurements were conducted using a thermal wave technique. The thermal diffusivity of the polycrystalline films was found to be about three times that of the amorphous films, but about one eighth that of bulk silicon single crystals. There was also an indication that the diffusivity increased with deposition temperature above the transition temperature from the amorphous to the polycrystalline state. The relationships between the thermal properties and microstructural features, such as grain size and grain boundary, are discussed.

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17

Schmidt, T., I. Höger, A. Gawlik, G. Andrä, and F. Falk. "Solid phase epitaxy of silicon thin films by diode laser irradiation for photovoltaic applications." Thin Solid Films 520, no. 24 (October 2012): 7087–92. http://dx.doi.org/10.1016/j.tsf.2012.08.004.

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18

Höger, I., A. Gawlik, G. Andrä, and F. Falk. "Thickening of thin laser crystallized silicon films by solid phase epitaxy for photovoltaic applications." Journal of Crystal Growth 364 (February 2013): 164–68. http://dx.doi.org/10.1016/j.jcrysgro.2012.11.017.

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19

Hirva, Pipsa, and Tapani A. Pakkanen. "Theoretical studies on the growth mechanisms of silicon thin films by atomic layer epitaxy." Surface Science 220, no. 1 (October 1989): 137–51. http://dx.doi.org/10.1016/0039-6028(89)90468-8.

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20

Hirva, Pipsa, and Tapani A. Pakkanen. "Theoretical studies on the growth mechanisms of silicon thin films by atomic layer epitaxy." Surface Science Letters 220, no. 1 (October 1989): A471. http://dx.doi.org/10.1016/0167-2584(89)90700-7.

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21

Moret, Mona P., Marijn A. C. Devillers, Andy R. A. Zauner, Edwin Aret, Paul R. Hageman, and Poul K. Larsen. "MOCVD PBZRxti1−xo3 thin films on platinized silicon wafers and srtio3 crystals." Integrated Ferroelectrics 36, no. 1-4 (January 2001): 265–74. http://dx.doi.org/10.1080/10584580108015548.

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22

Miura, Kenta, and Osamu Hanaizumi. "Demonstration of Light-Emitting Two-Dimensional Photonic Crystals Composed of Silicon-Rich Silicon-Dioxide Thin Films." Key Engineering Materials 459 (December 2010): 173–76. http://dx.doi.org/10.4028/www.scientific.net/kem.459.173.

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A light-emitting, two-dimensional photonic crystal composed of silicon-rich silicon-dioxide thin film was fabricated by using radio-frequency magnetron sputtering, simple interference exposure, and plasma etching. An enhanced photoluminescence spectrum was observed from the photonic crystal. We found that the photoluminescence peak was located around a wavelength of 830 nm and that the peak intensity was 1.5 times stronger than that from a silicon-rich silicon-dioxide thin film without a periodic structure.

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23

Escobedo-Cousin, Enrique, Konstantin Vassilevski, Irina P. Nikitina, Nicolas G. Wright, Anthony G. O'Neill, Alton B. Horsfall, and Jonathan P. Goss. "Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide." Materials Science Forum 717-720 (May 2012): 629–32. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.629.

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Patterned Few Layers Graphene (FLG) films were grown by local solid phase epitaxy from nickel silicide supersaturated with carbon. The process was realised by annealing of thin Ni films deposited on the carbon-terminated surface of 6H-SiC semi-insulating wafer followed by wet processing to remove the resulting nickel silicide. Raman spectroscopy was used to investigate both the formation and subsequent removal of nickel silicide during processing. Characterisation of the resulting FLG films was carried out by Raman spectroscopy and Atomic Force Microscopy (AFM). The thickness of the final FLG film estimated from the Raman spectra varied from 1 to 3 monolayers for initial Ni layers varying from 3 to 20 nm thick. AFM observations revealed process-induced surface roughening in FLG films, however, electrical conductivity measurements by Transmission Line Model (TLM) structures confirmed that roughness does not compromise the film sheet resistance.

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24

GAO, J., E. G. FU, Z. LUO, Z. WANG, and D. P. YU. "TEM STUDY OF THE MICROSTRUCTURE AND INTERFACES IN YBa2Cu3Oy THIN FILMS GROWN ON SILICON WITH A Eu2CuO4/Y-ZrO2 BI-LAYER BUFFER." Surface Review and Letters 14, no. 04 (August 2007): 751–54. http://dx.doi.org/10.1142/s0218625x07010196.

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The microstructures in the YBa 2 Cu 3 O y films grown on Eu 2 CuO 4/ Y-ZrO 2(YSZ) buffered silicon were studied by means of transmission electron microscopy. Our effort was emphasized on the influence of the interfacial microstructures on the formation and epitaxy of the grown layer. It was found that a native Si -oxide layer ~ 5 nm was formed at the boundary between YSZ and silicon. Such an intermediate layer should be formed after the initial formation of the grown YSZ layer as the epitaxy of YSZ still remain. The epitaxy can be kept through all layers without the formation of big grain boundaries. No amorphous layers and secondary phases were observed at the interfaces of YSZ/ECO and YBCO/ECO. The results demonstrate that the crystallinity and the epitaxy of YBCO have been greatly improved by the bi-layer buffer.

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25

Luo, Jinsong, Ligong Zhang, Haigui Yang, Nan Zhang, Yongfu Zhu, Xingyuan Liu, and Qing Jiang. "Oxidation kinetics of nanocrystalline Al thin films." Anti-Corrosion Methods and Materials 66, no. 5 (September 2, 2019): 638–43. http://dx.doi.org/10.1108/acmm-11-2018-2037.

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Purpose This paper aims to study the oxidation kinetics of the nanocrystalline Al ultrathin films. The influence of structure and composition evolution during thermal oxidation will be observed. The reason for the change in the oxidation activation energy on increasing the oxidation temperature will be discussed. Design/methodology/approach Al thin films are deposited on the silicon wafers as substrates by vacuumed thermal evaporation under the base pressure of 2 × 10−4 Pa, where the substrates are not heated. A crystalline quartz sensor is used to monitor the film thickness. The film thickness varies in the range from 30 to 100 nm. To keep the silicon substrate from oxidation during thermal oxidation of the Al film, a 50-nm gold film was deposited on the back side of silicon substrate. Isothermal oxidation studies of the Al film were carried out in air to assess the oxidation kinetics at 400-600°C. Findings The activation energy is positive and low for the low temperature oxidation, but it becomes apparently negative at higher temperatures. The oxide grains are nano-sized, and γ-Al2O3 crystals are formed at above 500°C. In light of the model by Davies, the grain boundary diffusion is believed to be the reason for the logarithmic oxidation rate rule. The negative activation energy at higher temperatures is apparent, which comes from the decline of diffusion paths due to the formation of the γ-Al2O3 crystals. Originality/value It is found that the oxidation kinetics of nanocrystalline Al thin films in air at 400-600°C follows the logarithmic law, and this logarithmic oxidation rate law is related to the grain boundary diffusion. The negative activation energies in the higher temperature range can be attributed to the formation of γ-Al2O3 crystal.

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26

Beddies, Gunter, Bernd Leibold, Hanns-Ulrich Habermeier, and Ganghua Lu. "Micropatterning of epitaxially grown YBCO thin films on ZrO2-buffered silicon single crystals." Physica C: Superconductivity 185-189 (December 1991): 2101–2. http://dx.doi.org/10.1016/0921-4534(91)91175-4.

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27

Cerqueira, M. F., M. Stepikhova, M. Losurdo, M. M. Giangregorio, E. Alves, T. Monteiro, M. J. Soares, and C. Boemare. "Influence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin films." Microelectronics Journal 34, no. 5-8 (May 2003): 375–78. http://dx.doi.org/10.1016/s0026-2692(03)00028-4.

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28

Suemitsu, Maki, Shota Sanbonsuge, Eiji Saito, Myung Ho Jung, Hirokazu Fukidome, and Sergey Filimonov. "High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon." Materials Science Forum 740-742 (January 2013): 327–30. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.327.

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In the formation of epitaxial graphene on Si substrates, the growth of high-quality 3C-SiC thin films on Si substrates is a key to success. As a solution to the large mismatch between the Si substrate and the 3C-SiC film, rotated epitaxy in which 3C-SiC(111) films are grown on Si(110) substrates is quite attractive. In some applications, on the other hand, a certatin thickness (~100 nm or more) is required for this 3C-SiC films as well. A two-step growth method has been thus developed to realize a high-rate, qualified rotated epitaxy. A qualified graphene is found to be formed on this rotated epi-film, as typified by the increase of the grain size by a factor of 1.6 from the non-rotated epitaxy.

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29

Thomson, D. B., T. Gehrke, K. J. Linthicum, P. Rajagopal, and R. F. Davis. "Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of Gan Films Via the Technique of Pendeo-Epitaxy." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 269–74. http://dx.doi.org/10.1557/s109257830000257x.

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Pendeo-epitaxy is a type of selective growth of thin films from the sidewalls of etched forms. The resulting films are suspended from the sidewalls and do not interface with the substrate. This process route has advantages over conventional lateral epitaxial overgrowth (LEO) techniques. In this research, pendeo-epitaxial growth of GaN films has been achieved on elongated GaN seed columns. The seed columns were etched from GaN grown on 6H-SiC (0001) substrates via metalorganic vapor phase epitaxy (MOVPE). Silicon nitride mask layers atop the GaN seed columns forced growth from the sidewalls. Pendeo-epitaxial growth of GaN was investigated using several growth temperatures. Higher growth temperatures resulted in improved coalescence due to greater lateral to vertical growth ratios.

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30

Hong, Sung-Ui, Mun-Cheol Paek, Gee-Pyeong Han, Young-Joon Sohn, Tae-Youb Kim, Kyoung-Ik Cho, Kyu-Hwan Shim, and Soon-Gil Yoon. "Characterization of Aluminum Nitride Thin Films on Silicon Substrates Grown by Plasma Assisted Molecular Beam Epitaxy." Japanese Journal of Applied Physics 41, Part 1, No. 9 (September 15, 2002): 5507–12. http://dx.doi.org/10.1143/jjap.41.5507.

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31

Kim, Min Su, Giwoong Nam, Jeong-Sik Son, and Jae-Young Leem. "Photoluminescence studies of ZnO thin films on porous silicon grown by plasma-assisted molecular beam epitaxy." Current Applied Physics 12 (December 2012): S94—S98. http://dx.doi.org/10.1016/j.cap.2012.05.016.

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32

Misra, A., and T. E. Mitchell. "Defect Structures in Semiconducting Resi2−x Epitaxial Thin Films." Microscopy and Microanalysis 5, S2 (August 1999): 726–27. http://dx.doi.org/10.1017/s1431927600016950.

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Narrow band gap semiconductors such as ReSi2-x (Eg ∽0.12 eV) are potential materials for infrared detectors [1]. Further, ReSi2-x is in thermodynamic equilibrium and has a very small lattice mismatch with Si offering the potential of developing ReSi2-x /Si heterojunction devices where the detector element and the signal processing circuitry can be integrated on one Si chip. In a previous study, strong crystallographic alignment between ReSi2-x film and (001)Si substrate was observed by ion channeling [1]. In this study, a transmission electron microscopy (TEM) study has been performed on ReSi2-x epitaxial films on (001) Si. Comparisons are made to our previous microscopy study [2] on the defect structures in bulk single crystals of ReSi2-x.ReSi2-x films were prepared by reactive deposition epitaxy (RDE) technique by evaporating Re onto (001) Si wafer at 650 °C. A cap layer of Cr was evaporated at room temperature. A bright field (BF) TEM image of the interface in cross-section is shown in Fig. 1 with the corresponding selected area diffraction pattern (SADP) shown in Fig. 2.

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33

Xu, Xiaolong, Yu Pan, Shuai Liu, Bo Han, Pingfan Gu, Siheng Li, Wanjin Xu, et al. "Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2." Science 372, no. 6538 (April 8, 2021): 195–200. http://dx.doi.org/10.1126/science.abf5825.

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The integration of two-dimensional (2D) van der Waals semiconductors into silicon electronics technology will require the production of large-scale, uniform, and highly crystalline films. We report a route for synthesizing wafer-scale single-crystalline 2H molybdenum ditelluride (MoTe2) semiconductors on an amorphous insulating substrate. In-plane 2D-epitaxy growth by tellurizing was triggered from a deliberately implanted single seed crystal. The resulting single-crystalline film completely covered a 2.5-centimeter wafer with excellent uniformity. The 2H MoTe2 2D single-crystalline film can use itself as a template for further rapid epitaxy in a vertical manner. Transistor arrays fabricated with the as-prepared 2H MoTe2 single crystals exhibited high electrical performance, with excellent uniformity and 100% device yield.

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34

Jones, K. M., and J. Thiesen. "Microanalytical Characterization of Structure and Defects for the Development of Low Temperature Silicon Epitaxial Growth." Microscopy and Microanalysis 5, S2 (August 1999): 750–51. http://dx.doi.org/10.1017/s1431927600017074.

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The nano-scale dimensions of next generation VLSI and ULSI devices will drive the development of a variety of new processing requirements. Currently device processing conditions from substrate cleaning to thin film deposition require temperatures in the range of 600°C to 1200°C. In order to realize a Si device circuit architecture which integrates Si/Ge structures or the needed super abrupt junctions of buried channel CMOS, low temperature processes must replace those in current production lines. For these processes to be successfully developed and implemented, proper characterization techniques must be used. In the case of epitaxy, cross-sectional TEM is the tool of choice. We will discuss the prominent role that TEM has played in the development of a new Si epitaxy technology. Recently, at the National Renewable Energy Laboratory (NREL), we have shown low temperature, 195°C to 400°C, Si epitaxy via hot-wire chemical vapor deposition- HWCVD. In the past HWCVD has been used to produce amorphous, micro-crystalline, and polycrystalline Si thin films.

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35

Arch, J. K., J. H. Werner, and E. Bauser. "Hall effect analysis of liquid phase epitaxy silicon for thin film solar cells." Solar Energy Materials and Solar Cells 29, no. 4 (May 1993): 387–96. http://dx.doi.org/10.1016/0927-0248(93)90097-m.

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36

Gao, J., L. Kang, H. Y. Wong, Y. L. Cheung, and J. Yang. "Improved Epitaxy and Surface Morphology in YBa2Cu3Oy Thin Films Grown on Double Buffered Si Wafers." International Journal of Modern Physics B 17, no. 18n20 (August 10, 2003): 3695–97. http://dx.doi.org/10.1142/s0217979203021630.

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Highly epitaxial thin films of YBCO have been obtained on silicon wafers using a Eu 2 CuO 4/ YSZ (yttrium-stabilized ZrO 2) double buffer. Our results showed that application of such a double buffer can significantly enhance the epitaxy of grown YBCO. It also leads to an excellent surface morphology. The average surface roughness was found less than 5 nm in a large range. The results of X-ray small angle reflection and positron spectroscpy demonstrate a very clear and flat interface between YBCO and buffer layers. The Eu 2 CuO 4/ YSZ double buffer could be promising for coating high-TC superconducting films on various reactive substrates.

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37

FOMIN, DMITRIY VLADIMIROVICH, NIKITA SERGEEVICH NOVGORODTSEV, DMITRIY OLEGOVICH STRUKOV, and ALEXEY VYACHESLAVOVICH POLYAKOV. "FORMATION OF MG2SI THIN FILMS ON SI (111) AND THEIR RESEARCH BY EOS AND EELS." Messenger AmSU, no. 93 (2021): 30–34. http://dx.doi.org/10.22250/jasu.93.6.

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The paper presents information on the results of the formation of a thin Mg2Si film on a silicon substrate by solid-phase epitaxy in an ultrahigh-vacuum chamber of the PHI model 590 device. There are a number of difficulties in the formation of magnesium silicide films due to the low condensation coefficient and high vapor pressure. Effective methods for the formation of Mg2Si are currently being sought. As a result of our experiment, a thin film was obtained, which was studied in-situ by the method of electron Auger spectroscopy and spectroscopy of characteristic energy losses by electrons. Analysis of the Auger electron spectrum showed the presence of magnesium and silicon atoms in the composition of the formed film. From the analysis of the EELS spectra, it was found that a thin film of silicide magnesium was formed.

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38

Ujihara, Toru, Eiji Kanda, Kazuo Obara, Kozo Fujiwara, Noritaka Usami, Gen Sazaki, Arnold Alguno, Toetsu Shishido, and Kazuo Nakajima. "Effects of growth temperature on the surface morphology of silicon thin films on (111) silicon monocrystalline substrate by liquid phase epitaxy." Journal of Crystal Growth 266, no. 4 (June 2004): 467–74. http://dx.doi.org/10.1016/j.jcrysgro.2003.12.081.

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39

Chubenko, Eugene, Alexey Klyshko, Vitaly Bondarenko, Marco Balucani, Anatoly I. Belous, and Victor Malyshev. "ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications." Advanced Materials Research 276 (July 2011): 3–19. http://dx.doi.org/10.4028/www.scientific.net/amr.276.3.

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In present work the investigation of the electrochemical and chemical hydrothermal deposition processes of ZnO on silicon is presented. The influence of the electrochemical process parameters on the characteristics and morphology of the ZnO deposits is analyzed. Electrochemical deposition from non aqueous DMSO solutions on porous silicon buffer layer is also discussed. The details of the chemical hydrothermal deposition from the nitrate bath of high-quality ZnO crystals on silicon substrate are presented. It was shown that morphology and size of synthesized ZnO crystals depends on the temperature of the deposition bath. Differences between photoluminescence of electrochemically deposited ZnO thin films and hydrothermally synthesized crystals are shown. Electrochemically deposited ZnO films demonstrate defect-caused luminescence and hydrothermally grown ZnO crystals shows intensive exciton luminescence band in UV region. Hydrothermal deposition of high-quality ZnO crystals on the surface of electrochemically deposited ZnO seed layer with porous silicon buffer improves photoluminescence properties of the structure which is useful for optoelectronics applications. Possible applications of ZnO as gas sensors and photovoltaic devices are considered. Aspects of ZnO electrochemical deposition on bulk silicon and silicon-on-isolator wafers for integration purposes are discussed.

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40

Inumaru, Kei, Hiroshi Okamoto, and Shoji Yamanaka. "Preparation of superconducting epitaxial thin films of transition metal nitrides on silicon wafers by molecular beam epitaxy." Journal of Crystal Growth 237-239 (April 2002): 2050–54. http://dx.doi.org/10.1016/s0022-0248(01)02307-7.

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41

Depauw, Valérie, Eddy Simoen, Ivan Gordon, and Jef Poortmans. "Epitaxy-free monocrystalline silicon thin films: Identifying the mechanisms behind lifetime degradation upon multiple high-temperature annealings." physica status solidi (a) 208, no. 3 (December 14, 2010): 600–603. http://dx.doi.org/10.1002/pssa.201000254.

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42

Méchin, L., C. Adamo, S. Wu, B. Guillet, S. Lebargy, C. Fur, J. M. Routoure, S. Mercone, M. Belmeguenai, and D. G. Schlom. "Epitaxial La0.7 Sr0.3 MnO3 thin films grown on SrTiO3 buffered silicon substrates by reactive molecular-beam epitaxy." physica status solidi (a) 209, no. 6 (March 12, 2012): 1090–95. http://dx.doi.org/10.1002/pssa.201127712.

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43

Gilmore, Walter M., Soma Chattopadhyay, Alex Kvit, A. K. Sharma, C. B. Lee, Ward J. Collis, J. Sankar, and J. Narayan. "Growth, characterization, and electrical properties of PbZr0.52Ti0.48O3 thin films on buffered silicon substrates using pulsed laser deposition." Journal of Materials Research 18, no. 1 (January 2003): 111–14. http://dx.doi.org/10.1557/jmr.2003.0016.

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Epitaxial thin films of PbZr0.52Ti0.48O3 (PZT) were synthesized successfully on SrRuO3/SrTiO3/MgO/TiN/Si heterostructures by pulsed laser deposition. The films were single phase and had (001) orientation. The deposition parameters were varied to obtain the best epitaxial layer for each of the compounds. Transmission electron microscopy indicated good epitaxy for the entire heterostructure and sharp interfaces between the epilayers. Dielectric and P–E hysteresis loop measurements were carried out with evaporated Ag electrodes. The dielectric constant for the films was found to be between 400–450. The value of saturation polarization Ps was between 55–60 μC/cm2, and the coercive field Ec varied from 60–70 kV/cm. Integration of PZT films with silicon will be useful for future memory and micromechanical devices.

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44

Wang, H., Ashutosh Tiwari, X. Zhang, A. Kvit, and J. Narayan. "Single Crystal TaN Thin Films on TiN/Si Heterostructure." MRS Proceedings 716 (2002). http://dx.doi.org/10.1557/proc-716-b8.8.

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AbstractWe have successfully grown epitaxial cubic (B1-NaCl structure) tantalum nitride films on Si (100) and (111) substrate using a pulsed laser deposition technique. A thin layer of titanium nitride was used as a buffer medium. We characterized these films using X-ray diffraction, high resolution transmission electron microscopy and scanning transmission electron microscopy (Zcontrast). X-ray diffraction and high-resolution transmission electron microscopy confirmed the single crystalline nature of these films with cubic-on-cubic epitaxy. The epitaxial relations follow TaN(100)//TiN(100)//Si(100) on Si(100) and TaN(111)//TiN(111)//Si(111) on Si(111). We observed sharp interfaces of TaN/TiN and TiN/Si without any indication of interfacial reaction. Rutherford backscattering experiments showed these films to be slightly nitrogen deficient (TaN0.95). High precision electrical resistivity measurements showed excellent metallic nature of these films. We also tried to deposit TaN directly on silicon, the films were found to be polycrystalline. In our method, TiN plays a key role in facilitating the epitaxial growth of TaN. This method exploits the concept of lattice matching epitaxy between TaN and TiN and domain matching epitaxy between TiN and Si. We studied the diffusion barrier properties of these films by growing a thin layer of copper on the top and subsequently annealing the films at 500°C and 600°C in vacuum. Cu diffusion layer was about 2nm after 600°C annealing for 30min. This work explores a promising way to grow high quality TaN diffusion barrier on silicon for copper interconnection.

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45

Habermeier, Hanns-Ulrich, Bentsian Elkin, Gunter Beddies, and Bernd Leibold. "Selective Epitaxy as a Chemistry Free Route for Ybco Thin Film Patterning." MRS Proceedings 285 (January 1, 1992). http://dx.doi.org/10.1557/proc-285-231.

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ABSTRACTTwo different routes for micropatterning of YBCO thin films by selective epitaxy are presented; both methods are based on the intermixing of YBCO with silicon at the growth temperature for ( 001 ) as well as ( hk0 ) YBCO thin film epitaxy. One method ( I ) uses a pre-patterned yttria stabilized zirconia [ YSZ ] thin film epitaxially grown on a silicon single crystal giving rise to the epitaxy of c-axis oriented YBCO on YSZ whereas intermixing yields a nonsuperconducting Si-Y-Ba--Cu-O phase elsewhere. The other method (II ) uses SrTiO3 substrates suitable for ( 103 ) as well as ( 110 ) YBCO epitaxy coated with a pre-patterned amorphous silicon layer prior to YBCO deposition. Both techniques are chemistry free routes for YBCO thin film patterningand pave the way for superconductor/semiconductor hybride device fabrication ( route I ) as well as basic investigations of the anisotropic electronic and optical properties of YBCO ( route II ).

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46

Greene, Brian J., Joseph Valentino, Judy L. Hoyt, and James F. Gibbons. "Thin Single Crystal Silicon on Oxide by Lateral Solid Phase Epitaxy of Amorphous Silicon and Silicon Germanium." MRS Proceedings 609 (2000). http://dx.doi.org/10.1557/proc-609-a9.3.

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ABSTRACTThe fabrication of 250 Å thick, undoped, single crystal silicon on insulator by lateral solid phase epitaxial growth from amorphous silicon on oxide patterned (001) silicon substrates is reported. Amorphous silicon was grown by low pressure chemical vapor deposition at 525°C using disilane. Annealing at temperatures between 540 and 570°C is used to accomplish the lateral epitaxial growth. The process makes use of a Si/Si1-xGex/Si stacked structure and selective etching. The thin Si1-xGex etch stop layer (x=0.2) is deposited in the amorphous phase and crystallized simultaneously with the Si layers. The lateral growth distance of the epitaxial region was 2.5 μm from the substrate seed window. This represents a final lateral to vertical aspect ratio of 100:1 for the single crystal silicon over oxide regions after selective etching of the top sacrificial Si layer. The effects of Ge incorporation on the lateral epitaxial growth process are also discussed. The lateral epitaxial growth rate of 20% Ge alloys is enhanced by roughly a factor of three compared to the rate of Si films at an anneal temperature of 555°C. Increased random nucleation rates associated with Ge alloy films are shown to be an important consideration when employing Si1-xGex to enhance lateral growth or as an etch stop layer.

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47

Akasaka, T., D. He, and I. Shimizu. "Fabrication of Polycrystalline Silicon on Glass from Fluorinated Precursors with the Aid of Atomic Hydrogen." MRS Proceedings 403 (1995). http://dx.doi.org/10.1557/proc-403-391.

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AbstractHigh quality polycrystalline silicon was made on glass from fluorinated precursors by two step growth, i.e., (1) formation of seed crystals on glass by layer-by-layer(LL) technique and (2) grain-growth on the seeds. In LL technique, deposition of ultra-thin films and treatment with atomic hydrogen was repeated alternately. Columnar grains with 200 nm dia were grown epitaxy-like on the seeds by optimizing the deposition parameters under in situ observation with spectroscopic ellipsometry.

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48

Chen, Claudine M., and Harry A. Atwater. "Polycrystalline Si Films Fabricated by Low Temperature Selective Nucleation and Solid Phase Epitaxy Process." MRS Proceedings 485 (1997). http://dx.doi.org/10.1557/proc-485-67.

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AbstractWith a selective nucleation and solid phase epitaxy (SNSPE) process, grain sizes of 10 μm have been achieved to date at 620°C in 100 nrm thick silicon films on amorphous SiO2, with potential for greater grain sizes. Selective nucleation occurs via a thin film reaction between a patterned array of 20 rnm thick indium islands which act as heterogeneous nucleation sites on the amorphous silicon starting material. Crystal growth proceeds by lateral solid phase epitaxy from the nucleation sites, during the incubation time for random nucleation. The largest achievable grain size by SNSPE is thus approximately the product of the incubation time and the solid phase epitaxy rate. Electronic dopants, such as B, P, and Al, are found to enhance the solid phase epitaxy rate and affect the nucleation rate.

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49

Sadwick, L. P., R. M. Ostrom, B. J. Wu, K. L. Wang, and R. S. Williams. "Electrical Properties of Thin Intermetallic Platinum-Gallium Films Grown by MBE on Gallium Arsenide and Silicon." MRS Proceedings 148 (1989). http://dx.doi.org/10.1557/proc-148-291.

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ABSTRACTThin films of the platinum-gallium (Pt-Ga) family have been grown on gallium arsenide (GaAs) and silicon (Si) by molecular beam epitaxy (MBE). A partial list of potential uses for these and similar structures is high temperature stable photodetectors, Schottky andOhmic contacts, epitaxial buried contacts, and field effect transistors. In this work the electrical properties of Pt2Ga, PtGa, and PtGa2 on both GaAs andSi will be presented. The resistivity of these thin films has been found to depend on the crystal quality and phase of the material.

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50

Doll, Gary L., Jeffrey A. Sell, Lourdes Salamanca-riba, and Ashwin K. Ballal. "Laser Deposited Cubic Boron Nitride Films." MRS Proceedings 191 (1990). http://dx.doi.org/10.1557/proc-191-55.

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ABSTRACTWe report the successful growth of cubic boron nitride thin films on single crystal 100 silicon by using pulsed excimer laser ablation of a hexagonal boron nitride bulk target. Optical emission spectra were obtained during the film deposition giving insight into the deposition mechanism. The deposited films were characterized by transmission electron microscopy, scanning electron microscopy, optical microscopy, x-ray diffraction, and Auger electron microscopy. Regions of the films were found to exhibit epitaxy with the substrate.

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