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Dissertations / Theses on the topic 'Erbium oxides'

Author: Grafiati

Published: 4 June 2021

Last updated: 17 February 2022

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1

DANTAS, ELIZABETH S. K. "Estudo para a determinacao de impurezas de terras raras em matrizes de oxidos de samario, terbio e disprosio por espectrometria de absorcao atomica." reponame:Repositório Institucional do IPEN, 1990. http://repositorio.ipen.br:8080/xmlui/handle/123456789/10224.

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Made available in DSpace on 2014-10-09T12:36:13Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T13:59:21Z (GMT). No. of bitstreams: 1 03764.pdf: 1726774 bytes, checksum: 796db2a57899dea32f57ba34e954e2c2 (MD5)<br>Dissertacao (Mestrado)<br>IPEN/D<br>Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP

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2

Seregin, Vladimir Victor. "Part I, Fabrication and surface modification of composite biomaterials based on silicon and calcium disilicide Part II, Synthesis and characterization of erbium doped silicon nanocrystals encapsulated by aluminum and zinc oxides /." Fort Worth, Tex. : Texas Christian University, 2006. http://etd.tcu.edu/etdfiles/available/etd-04252006-145309/unrestricted/seregin.pdf.

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3

Souriau, Jean-Charles. "Recherche d'un matériau laser monocristallin susceptible de présenter une émission stimulée vers 1550 ou 2000 nm à température ambiante." Grenoble 1, 1993. http://www.theses.fr/1993GRE10198.

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Les applications des lasers susceptibles d'emettre a temperature ambiante dans la zone de securite oculaire autour de 1550 et 2000 nm sont tres nombreuses: telemetrie, altimetrie, anemometrie. . . L'obtention de ces lasers peut etre realisee par le dopage de matrices transparentes par les ions terres rares er#3#+, tm#3#+ et ho#3#+. Ceux-ci presentent respectivement une transition radiative vers 1550, 2000 et 2100 nm. Cependant les interactions entre ces ions conduisent a des mecanismes qui diminuent les rendements laser dans l'infrarouge. L'objet de cette these est de decouvrir de nouvelles ma

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4

CORREA, EDUARDO DE L. "Produção, caracterização e aplicação de nanopartículas de Gd2O3 e Er2O3 como radiossensibilizadores em feixes de Radioterapia." reponame:Repositório Institucional do IPEN, 2017. http://repositorio.ipen.br:8080/xmlui/handle/123456789/27968.

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Submitted by Marco Antonio Oliveira da Silva (maosilva@ipen.br) on 2017-11-08T16:29:11Z No. of bitstreams: 0<br>Made available in DSpace on 2017-11-08T16:29:11Z (GMT). No. of bitstreams: 0<br>Nesse trabalho foram produzidas nanopartículas (NPs) de Gd2O3 e Er2O3 para aplicação como radiossensibilizadores em feixes de radioterapia. Elas foram sintetizadas no Laboratório de Interações Hiperfinas do IPEN pelo método da decomposição térmica e caracterizadas utilizando difração de raios-X, para verificar a estrutura cristalina, microscopia eletrônica de transmissão, para obter informações sobre form

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5

Shah, M. "Excitation mechanisms in erbium-doped silicon-rich silicon oxide." Thesis, University College London (University of London), 2014. http://discovery.ucl.ac.uk/1420212/.

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Since the invention of the first silicon transistor in 1947, the electronics industry has grown at a rapid rate, famously predicted and guided by Moore’s law. However, it has recently become apparent that satisfying Moore’s law is becoming increasingly difficult; we are now approaching the fundamental limits of device miniaturization and device speed, and alternative solutions for this problem are continuously being pursued. Over the past couple of decades, silicon photonics has emerged as a promising alternative solution. By carrying data through photons instead of electrons, many of the prob

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6

Johnson, Samuel C. "Scanning Optical Probe Thermometry Using an Optically Trapped Erbium Oxide Nanoparticle." Ohio University Honors Tutorial College / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=ouhonors1429811168.

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7

Chen, Kevin M. (Kevin Ming) 1974. "Electrical breakdown and luminescence from erbium oxide and Er-doped silicon thin films." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/9816.

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8

Hicks, William Carl. "Rare earth erbium doped yttrium barium copper oxide superconducting domains and their magnetic properties /." Thesis, Connect to this title online; UW restricted, 2002. http://hdl.handle.net/1773/10608.

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9

Huang, Xuezhen. "Fabrication and optical properties of (I) erbium-doped nanowires containing germanium and/or zinc oxide and (II) porous germanium nanowires." [Fort Worth, Tex.] : Texas Christian University, 2010. http://etd.tcu.edu/etdfiles/available/etd-04282010-134727/unrestricted/Huang.pdf.

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10

Steveler, Émilie. "Etude des mécanismes de photoluminescence dans les nitrures et oxydes de silicium dopés aux terres rares (Er, Nd)." Thesis, Université de Lorraine, 2012. http://www.theses.fr/2012LORR0109/document.

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Ce travail de thèse est dédié à l'étude des transitions radiatives dans les matériaux de nitrure et d'oxyde de silicium dopés aux ions de terres rares (Er3+, Nd3+). La caractérisation optique des films minces élaborés par évaporation thermique est basée sur la spectroscopie de photoluminescence. Les études menées s'inscrivent dans la recherche de processus d'excitation indirecte des ions Er3+ et Nd3+ dans des matrices à base de silicium. Dans les nitrures et oxynitrures de silicium, un processus de transfert d'énergie permettant l'excitation indirecte des ions Er3+ est mis en évidence. Pour le

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11

Remonte, Ádamo Rossano Vicentini. "Síntese e caracterização de nanocompósitos vitrocerâmicos transparentes a base de SiO2-ZrO2 dopados com íons Eu3+ e Er3+ via processo sol-gel." Universidade de São Paulo, 2008. http://www.teses.usp.br/teses/disponiveis/59/59138/tde-26052009-165942/.

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A preparação de vitrocerâmicas transparentes a base de SiO2-ZrO2 dopado com íons Eu3+ e Er3+ através da metodologia sol-gel foi o objetivo desta dissertação. São apresentados resultados estruturais e óticos deste sistema, em função de temperatura, tempo e composição (variando-se a concentração de zircônia). Os sóis foram preparados em meio ácido e deixados em repouso até evaporação total do solvente, obtendo-se assim monolitos amorfos, os quais foram submetidos a tratamentos a 900, 1000 e 1100ºC durante 2, 4 e 8 horas visando eliminação de resíduos orgânicos, moléculas de água, grupos hidroxil

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12

"FABRICATION AND OPTICAL PROPERTIES OF ERBIUM-DOPED GROUP IV NANOWIRES AND THEIR CORRESPONDING OXIDES." Texas Christian University, 2007. http://etd.tcu.edu/etdfiles/available/etd-04042007-091038/.

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13

"PART I: FABRICATION AND SURFACE MODIFICATION OF COMPOSITE BIOMATERIALS BASED ON SILICON AND CALCIUM DISILICIDE; PART II: SYNTHESIS AND CHARACTERIZATION OF ERBIUM DOPED SILICON NANOCRYSTALS ENCAPSULATED BY ALUMINUM AND ZINC OXIDES." Texas Christian University, 2006. http://etd.tcu.edu/etdfiles/available/etd-04252006-145309/.

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14

Lin, Jian Chyi, and 林建旗. "Development of High-k Erbium Oxide and Neodymium Oxide sensing membranes for ISFET." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/63009903073246527136.

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碩士<br>長庚大學<br>電子工程學研究所<br>96<br>Bergveld reported measuring ion concentration in solutions on ion sensitive field effect transistors (ISFETs), which are based on semiconductor technology. The 1970 paper of Bergveld is cited as the first paper; many theoretical and experimental studies have been published to describe the behavior of this chemically sensitive electronic device. The commonly accepted model to account for the pH sensitivity of the ISFET is the site-dissociation model, which was first proposed by Yates etc. Recently, Al2O3, TiO2, Ta2O5, and SnO2 were proposed as hydrogen ion sensin

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15

Wu, Yi-Hang, and 吳宜航. "Fabrication of Spin-on Luminescence Thin Films Using a mixture of Erbium Oxide and Ytterbium Oxide Nanoparticles." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/21090634569922903329.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>95<br>Because demand for data transmission increase very fast, research of fiber-optic communication becomes an important technology. It makes that Er3+ becomes an attractive issue for researches. Accompanying the blooming research in nanotechnology, many people focus on the surface effect of the nanoparticles and use it to increase emission efficiency. Nanotechnology provides a different way to solve the problem of data transmission. In this thesis, we provide a new .fabrication: using nanoparticles to fabricate erbium doped luminescence thin film. We mix nanoparti

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16

Fan, Hsuan Chi, and 范軒琦. "The Fluorine Ion Effect of Er2O3(Erbium Oxide) Dielectrics Deposited on Polycrystalline Silicon." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/78802876348588942954.

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碩士<br>長庚大學<br>電子工程學系<br>98<br>In this thesis, we used the Er2O3 high-k materials combined with fluorine implantation to improve gate insulator integrity for TFT application. At first, the Er2O3 high-k dielectrics were deposited by RF sputtering on polycrystalline silicon combined with fluorine implantation and post-RTA treatment to improve the electrical characteristics of the polysilicon high-k dielectrics. Using high-k material as gate dielectrics can effectively decrease the leakage current, since that can preserve the equivalent oxide thickness (EOT) and reduce the direct tunneling cur

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17

Hsu, Wei-Hao, and 徐暐豪. "Effect of Titanium Content on the Physical and Electrical Properties of Erbium Oxide and Neodymium Oxide Gate Dielectrics." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/96074520119001386452.

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碩士<br>長庚大學<br>電子工程研究所<br>95<br>In this thesis, we reported on structural and electrical characteristic of high-k erbium titanium oxide (Er2TiO5) and neodymium titanium oxide (NdTiO3) as the metal-oxide-semiconductor capacitance gate dielectrics by reactive RF sputtering. Effect of titanium content in erbium oxide and neodymium oxide of the gate dielectrics with post deposition O2 annealing treatment on the crystallization temperature, leakage current, band gap, dielectric constant, and interface trap density. Compared to Er2O3 and Nd2O3, Er2TiO5 and NdTiO3 was found to exhibit excellent electr

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18

Chen, Chun-Lin, and 陳俊霖. "The electrical characteristics and physical properties of lanthanum oxide and erbium oxide gate dielectrics for different metal gates." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/73487172183615497475.

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碩士<br>長庚大學<br>電子工程研究所<br>94<br>In this thesis, we have investigated properties of insulating lanthanum oxide and erbium oxide films in connection with the replacement of SiO2 gate dielectrics in new generation of CMOS devices. The La2O3 and Er2O3 layers were grown using RF-sputtering with Al and Al/TaN gate electrode. We describe the evolution with annealing temperature of the structure and electrical characteristics. X-ray diffraction analysis revealed polycrystalline character of the films grown above 700C. The X-ray photoemission spectroscopy detected lanthanum silicate at the interface

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19

Che, Kuan-Chin, and 車冠勤. "Soliton dynamics of passively mode-locked Erbium doped fiber laser based on graphene oxide." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/hr375q.

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碩士<br>國立臺北科技大學<br>光電工程系<br>106<br>In this work, I investigated the soliton dynamics from erbium-doped fiber laser (EDFL) system using graphene oxide (GO) doped polyvinyl alcohol (PVA) polymer (GO/PVA) film as a saturable absorber. The GO/PVA film was prepared using the liquid-phase exfoliation method to produce a nanoscale graphene oxide in aqueous solution and then mixed with PVA sol-gel. The mixed GO/PVA solution was poured into a plastic mold and dehydrated in oven to form a translucent GO/PVA composite film. By means of the transmittance spectrum and Raman spectroscopy, the GO/PVA film sho

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20

Shih, Ping-Hung, and 石秉弘. "Silicon-based Luminescence Devices Using a Mixture of Erbium Oxide Nanoparticles and Spin-on Glass." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/98370580511344393445.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>94<br>Because the demand for data transmission increases very fast, fiber-optic communication becomes a very important technology. Erbium doped fiber amplifier is the core technology in optical communication system. This is why Er3+ becomes an attractive issue for researches. Also, nanotechnology provides a different way to solve the problem. Many people focus on the surface effect of the nanoparticles and use it to increase emission efficiency. We combine these two advantages and introduce a new fabrication process to fabricate a luminescence device: using nanopart

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21

Chou, Kai-Chieh, and 周楷傑. "Study of Zinc Erbium Oxide Thin Grown by Pulsed-Laser Deposition :Structural, Optical, and Magnetic Properties." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/z9v3vj.

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碩士<br>國立臺灣師範大學<br>物理學系<br>103<br>Pulsed-laser deposition (PLD) was applied to grow erbium(Er)-doped ZnO thin films on c-sapphire substrate under two different oxygen pressures : 3×〖10〗^(-3) and 3×〖10〗^(-1) mbar by using shadow mask or silver glue. XPS analysis showed Er/Zn ratio of target was close to thin film which was calculated by using Er ion area. X-ray diffraction spectrum showed decreasing crystal quality of ZnO and increasing c-axis lattice constant with increasing Er doping concentration in two oxygen pressures for both methods. The overall crystal quality of Er-doped ZnO films in hi

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22

Tsai, Ying Jie, and 蔡盈杰. "Improved Gate leakage and Microwave Performance by Inserting A Thin Erbium oxide layer on AlGaN/GaN HEMT Structure." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/44906811079425957881.

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碩士<br>長庚大學<br>光電工程研究所<br>100<br>AlGaN/GaN HEMTs have been a subject of intense recent investigation and have emerged as attractive candidates for high voltage,high power operation at microwave frequencies. The Erbium oxide (Er2O3) inserted gate AlGaN/GaN/Silicon heterostucture Metal-Oxide-Semiconductor High Electron Mobility Transistor (MOS-HEMT) by electron-beam (E-beam) evaporate high dielectric constant (High-k) erbium oxide layer was 20nm, the Er2O3 inserted layer dielectric constant developed in this study was 14. Moreover, exhibit improved device characteristics performance, as compared

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23

"FABRICATION AND OPTICAL PROPERTIES OF (I) ERBIUM-DOPED NANOWIRES CONTAINING GERMANIUM AND/OR ZINC OXIDE AND (II) POROUS GERMANIUM NANOWIRES." Texas Christian University, 2010. http://etd.tcu.edu/etdfiles/available/etd-04282010-134727/.

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