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Journal articles on the topic 'Etching operations'

Author: Grafiati

Published: 4 June 2025

Last updated: 15 July 2025

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1

Ting, Huey Tze, Khaled A. Abou-El-Hossein, and Han Bing Chua. "Etching Rate of Machinable Glass Ceramic." Advanced Materials Research 264-265 (June 2011): 1306–11. http://dx.doi.org/10.4028/www.scientific.net/amr.264-265.1306.

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Micromachining of advanced ceramics has been growing tremendously especially in the MEMs industry. All the time, researchers and industrial engineers have strived to achieve the lowest production cost at possible highest quality in micromachining operations. In this paper, the micromachining operation by means of chemical etching of ceramics is discussed. Machinable glass-ceramic (MGC) is used as the substrate and the influence of various input factors of the etching process is analyzed. These factors include etching temperature, etching period and, etching solution. The etching rate is then a

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2

Yatskov, Mykola, Natalia Korchyk, Oksana Mysina, and Nadia Budenkova. "Creation of a combined system for treatment of iron-containing wastewater from etching operations." Technology audit and production reserves 6, no. 3(62) (2021): 21–26. http://dx.doi.org/10.15587/2706-5448.2021.247550.

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The object of research is the methods of purification of iron-containing wastewater from etching operations, the subject of the study is spent technological solutions of etching and wastewater from the operations of washing enterprises of hardware products. Spent etching solutions are characterized as highly concentrated solutions, and wash water belongs to the category of concentrated solutions containing toxic impurities: heavy metal ions, acids, surfactants. The main problem in the etching area is the processing of used etching solutions. The most progressive creation of combined systems in

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3

Mykola, Yatskov, Korchyk Natalia, Mysina Oksana, and Budenkova Nadia. "Creation of a combined system for treatment of iron-containing wastewater from etching operations." Technology Audit and Production Reserves 6, no. 3(62) (2021): 21–26. https://doi.org/10.15587/2706-5448.2021.247550.

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<em>The object of research is the methods of purification of iron-containing wastewater from etching operations, the subject of the study is spent technological solutions of etching and wastewater from the operations of washing enterprises of hardware products. Spent etching solutions are characterized as highly concentrated solutions, and wash water belongs to the category of concentrated solutions containing toxic impurities: heavy metal ions, acids, surfactants. The main problem in the etching area is the processing of used etching solutions. The most progressive creation of combined system

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4

Yatskov, Mykola, Natalia Korchyk, Oksana Mysina, and Nadia Budenkova. "Improvement of the technological treatment scheme of iron-containing wastewater from etching operations." EUREKA: Life Sciences, no. 3 (May 31, 2021): 21–28. http://dx.doi.org/10.21303/2504-5695.2021.001883.

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The aim of the research is to improve the technological scheme of treatment of iron-containing wastewater from etching operations by creating combined systems, including reagent wastewater treatment, their mutual neutralization, regeneration of etching solutions, deep post-treatment using a magnetic device. The main volume of wastewater is treated in centralized systems with partial return of water to the production process. Spent solutions from etching operations are subject to regeneration with return to the production process and partial dosing into the main wastewater stream from flushing

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Mykola, Yatskov, Korchyk Natalia, Mysina Oksana, and Budenkova Nadia. "Improvement of the technological treatment scheme of iron-containing wastewater from etching operations." EUREKA: Life Sciences 3 (May 31, 2021): 21–28. https://doi.org/10.21303/2504-5695.2021.001883.

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The aim of the research is to improve the technological scheme of treatment of iron-containing wastewater from etching operations by creating combined systems, including reagent wastewater treatment, their mutual neutralization, regeneration of etching solutions, deep post-treatment using a magnetic device. The main volume of wastewater is treated in centralized systems with partial return of water to the production process. Spent solutions from etching operations are subject to regeneration with return to the production process and partial dosing into the main wastewater stream from flushing

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6

Bolotnov, А. S., and P. V. Slitikov. "Sitall Glass-Ceramic Treatment Technology for the Case of Etching and Cleaning of a Ring Laser Monolithic Crystal." Herald of the Bauman Moscow State Technical University. Series Instrument Engineering, no. 1 (130) (February 2020): 4–14. http://dx.doi.org/10.18698/0236-3933-2020-1-4-14.

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The paper uses production of the main part of a ring laser, that is a monolithic sitall crystal, as an example to describe the main stages of manufacturing and chemical processing of the SO-115M lithium aluminosilicate sitall glass-ceramic material. We analysed composition optimisation and glass-ceramic production methods and investigated the effects of various components (such as glass formers, modifiers, and clarifiers) on the optical performance of the finished article. We describe the sequence of main monolithic crystal processing operations: etching and cleaning, which includes degreasing

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7

Yatskov, Mykola, Natalia Korchyk, Nadia Budenkova, and Oksana Mysina. "Development of a resource-saving technology for the treatment of ferrum-containing wastewater from etching operations." Eastern-European Journal of Enterprise Technologies 6, no. 10 (120) (2022): 16–26. http://dx.doi.org/10.15587/1729-4061.2022.267949.

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The object of this study is wastewater from chloride and sulfate etching operations. This paper reports results of research on ways to reduce the consumption of chemical reagents in wastewater treatment systems from etching operations. Spent etching solutions are subject to regeneration with return to the production process and partial dosing to the main stream of wastewater. It was found that at a ferrum concentration of 30 g/l in etching solutions, the solution must be treated with an alkaline reagent (10–20 % NaOH) to pH=3.5–4.0 in order to return to the technological process. In this case,

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8

Choi, Woong, Sanghyun Moon та Jihyun Kim. "Photo-Enhanced Inverse Metal-Assisted Chemical Etching of α-Ga₂O₃grown on Al₂O₃". ECS Meeting Abstracts MA2023-01, № 32 (2023): 1833. http://dx.doi.org/10.1149/ma2023-01321833mtgabs.

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Si-based semiconductor devices are not suitable for stable operations in the aerospace environments. Among the ultra-wide bandgap semiconductor materials, gallium oxide (Ga2O3) is attracting attention as the next-generation material for high-power semiconductor devices in extreme condition beyond Si, owing to its large band gap of 4.5-5.3 eV, high breakdown electric fields of 7-10 MV/cm, excellent chemical and thermal stability and radiation hardness. Alpha gallium oxide (α-Ga2O3) has the largest bandgap (4.8-5.3 eV) and the highest breakdown electric fields (~10 MV/cm) among the five Ga2O3 po

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9

Mykola, Yatskov, Korchyk Natalia, Budenkova Nadia, and Mysina Oksana. "Development of a resource-saving technology for the treatment of ferrum-containing wastewater from etching operations." Eastern-European Journal of Enterprise Technologies 6, no. 10 (120) (2022): 16–26. https://doi.org/10.15587/1729-4061.2022.267949.

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The object of this study is wastewater from chloride and sulfate etching operations. This paper reports results of research on ways to reduce the consumption of chemical reagents in wastewater treatment systems from etching operations. Spent etching solutions are subject to regeneration with return to the production process and partial dosing to the main stream of wastewater. It was found that at a ferrum concentration of 30 g/l in etching solutions, the solution must be treated with an alkaline reagent (10–20 % NaOH) to pH=3.5–4.0 in order to return to the technological

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10

Foucaud, Mathieu, Philippe Garnier, Vincent Joseph, Erwine Pargon, Névine Rochat, and Raluca Tiron. "Surface Preparations Impact on 248nm Deep UV Photo Resists Adhesion during a Wet Etch." Solid State Phenomena 195 (December 2012): 58–61. http://dx.doi.org/10.4028/www.scientific.net/ssp.195.58.

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Integrated circuits manufacturing still requires several wet etching operations in presence of photo resist. They are usually used to define the gate oxides or metal in a high k metal gate, gate first integration scheme. During this process step, the resist is used for masking and prevents the underneath material from being etched away. Wet treatments are preferred to plasma etching to perform this operation. Indeed, a smooth channels surface is mandatory to obtain a high carriers mobility. It is then critical to avoid any resist lift-off during the wet treatment in order to guarantee the unde

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Wang, Zhuoer, Qiuhong Cheng, Pengyao Xing, Zhaozhen Cao, and Aiyou Hao. "Hydrogen bonded co-assembly of aromatic amino acids and bipyridines that serves as a sacrificial template in superstructure formation." Soft Matter 15, no. 32 (2019): 6596–603. http://dx.doi.org/10.1039/c9sm01271k.

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12

Pavlov, A. Yu, K. N. Tomosh, V. Yu Pavlov, D. N. Slapovskiy, A. V. Klekovkin, and I. A. Ivchenko. "Electron Mobility Transistors On AlGaN/GaN Heterostructure with Recess in the Barrier Layer." Nano- i Mikrosistemnaya Tehnika 24, no. 2 (2022): 103–8. http://dx.doi.org/10.17587/nmst.24.103-108.

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The influence of thickness of barrier layer nitride heterostructure on characteristics of high electron mobility transistors (HEMT). Reducing thickness of the barrier layer will increase transconductance of transistor, its operating frequencies, gain, and specific output power. In the work, change in thickness of barrier layer of heterostructure due to etching of gate recess. The developed and implemented method of low-energy defectless dry etching of the AlGaN barrier layer is used, which consists in cyclic repetition operations of plasma-chemical oxidation of AlGaN and removal of the oxide l

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Polushin, Nikolay Ivanovich, Alexander Ivanovich Laptev, Boris Vladimirovich Spitsyn, et al. "Deposition of Boron-Doped Thin CVD Diamond Films from Methane-Triethyl Borate-Hydrogen Gas Mixture." Processes 8, no. 6 (2020): 666. http://dx.doi.org/10.3390/pr8060666.

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Boron-doped diamond is a promising semiconductor material that can be used as a sensor and in power electronics. Currently, researchers have obtained thin boron-doped diamond layers due to low film growth rates (2–10 μm/h), with polycrystalline diamond growth on the front and edge planes of thicker crystals, inhomogeneous properties in the growing crystal’s volume, and the presence of different structural defects. One way to reduce structural imperfection is the specification of optimal synthesis conditions, as well as surface etching, to remove diamond polycrystals. Etching can be carried out

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Wiśniewski, Jacek, and Grażyna Wiśniewska. "Water and acid recovery from the rinse after metal etching operations." Hydrometallurgy 53, no. 2 (1999): 105–19. http://dx.doi.org/10.1016/s0304-386x(99)00020-1.

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15

Berto, Andrea, Carlos A. Nogueira, and Fernanda Margarido. "Soda and Aluminum Recovery from Spent Etching Baths by Aqueous Precipitation." Materials Science Forum 730-732 (November 2012): 642–47. http://dx.doi.org/10.4028/www.scientific.net/msf.730-732.642.

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The aluminum anodising industry is an important industrial sector that produces great amounts of polluted effluents, which after treatment generate sludge. This fact brings environmental and economical concerns to the companies. Best way to deal with the problem, according to the “prevention strategy” set by the European Directive on Integrated Pollution Prevention and Control, is to implement preventive techniques and technologies to optimise the use of resources and minimise losses, and in turn waste. Among the operations of an anodising line, the etching/satinising stage is responsible for

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Алексеев, А. Н., та С. И. Петров. "РЕЗУЛЬТАТЫ ПРИМЕНЕНИЯ ОТЕЧЕСТВЕННОГО ОБОРУДОВАНИЯ ДЛЯ РЕАЛИЗАЦИИ КЛЮЧЕВЫХ ТЕХНОЛОГИЧЕСКИХ ОПЕРАЦИЙ ПРИ ИЗГОТОВЛЕНИИ СВЧ ЭКБ НА ОСНОВЕ GAN И GAAS". NANOINDUSTRY Russia 96, № 3s (2020): 494–97. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.494.497.

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Показаны результаты применения отечественного оборудования (ЗАО «НТО») для разработки и проведения ключевых технологических операций при изготовлении мощных полевых транзисторов и МИС СВЧ-диапазона на основе GaN и GaAs. Обсуждаются особенности и результаты оптимизации технологических установок для таких операций, как выращивание гетероструктур методом МЛЭ, нанесение контактной и затворной металлизации при помощи электронно-лучевого напыления, отжиг омических контактов, травление меза-изоляции и нанесение диэлектрика при помощи плазмохимических методов. Кроме того, представлены особенности уста

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17

Abdul Majeed E.Ibrahim, Hasen Askar Kadhem, and Amjad hossen jasem. "Study the effect resistivity slide and the time of etching on silicon surfaces morphology of producing photovoltaic method." Tikrit Journal of Pure Science 21, no. 7 (2023): 152–61. http://dx.doi.org/10.25130/tjps.v21i7.1122.

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Our work focusing on studying the effect of the etching time and Resistivity on morphology of the Surfaces which is producted by the photochemical etching method from the wafer silicon n-type which is used ,where is found by increasing the etching time from 70min to 100 min the high of the nano structural is increasing from 4.17nm to 11.3 nm of same n-type silicon wafer, while we studying the Resistivity effect on morphology the results was declare increasing in the product nano structures( i.e the depth etching increase) from 4.11nm to 10 nm under same etching time 70 min of the difference of

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18

di Benedetto, Luigi, Gian Domenico Licciardo, Andreas Huerner, Tobias Erlbacher, Anton Bauer, and Alfredo Rubino. "First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC: A Proof of Concept." Materials Science Forum 963 (July 2019): 697–700. http://dx.doi.org/10.4028/www.scientific.net/msf.963.697.

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In this paper the Bipolar Mode Field Effect Transistor (BMFET) is demonstrated for the first time in 4H-SiC. The structure is based by two p+-type regions symmetrically placed at both sides of a n-type region channel and the device implements two control mechanisms: into the channel the potential barrier controls the electron flow in the off-state operations, like VJFET-based devices, whereas, during the on-state, the holes injected from the p-n junctions induce the conductivity modulation of the channel reducing the on-resistance with beneficial effects on current gain and switching operation

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Kotibhaskar, Nikhil, Noah Greenberg, Sainath Motlakunta, Chung-You Shih, and Rajibul Islam. "Fast and high-yield fabrication of axially symmetric ion-trap needle electrodes via two step electrochemical etching." Review of Scientific Instruments 94, no. 3 (2023): 033201. http://dx.doi.org/10.1063/5.0108425.

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Despite the progress in building sophisticated microfabricated ion traps, Paul traps employing needle electrodes retain their significance due to the simplicity of fabrication while producing high-quality systems suitable for quantum information processing, atomic clocks, etc. For low noise operations such as minimizing “excess micromotion,” needles should be geometrically straight and aligned precisely with respect to each other. Self-terminated electrochemical etching, previously employed for fabricating ion-trap needle electrodes, employs a sensitive and time-consuming technique, resulting

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Boyarskih, Ekaterina P., Ludmila A. Brusnitsina, Elena I. Stepanovskih, and Tatiana A. Alekseeva. "Optimization of copper ammonium etching composition solutions in the production of printed circuit boards." Butlerov Communications 61, no. 3 (2020): 36–42. http://dx.doi.org/10.37952/roi-jbc-01/20-61-3-36.

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Etching in the production of printed circuit boards is the process of chemical destruction of metal (mainly copper) as a result of the action of liquid or gaseous etchers on the areas of the surface of the workpiece unprotected by a protective mask (etching resist). Copper foil etching is used to form a conductive pattern of PCB by removing copper from unprotected etching resist areas. This is one of the main operations of manufacturing the PCB, since a pattern of printed elements is formed on it. During the etching process, unprotected copper from the printed circuit board by means of an oxid

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Spiridonov, Fedor, Ramis Mingazov, and Konstantin Shishakov. "Technological process automation of balancing quartz resonators of solid state wave gyroscopes." Automation and modeling in design and management 2023, no. 1 (2023): 21–31. http://dx.doi.org/10.30987/2658-6436-2023-1-21-31.

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The paper discusses the main issues that arise while developing and implementing automatic process control systems (APCS) in relation to the technological operations of balancing quartz hemispherical resonators of solid-state wave gyroscopes. For this, the article gives a general algorithm for performing the technological process of resonator balancing; block diagrams of the automatic process control system of balancing and the general algorithm for balancing the resonators. The latter discloses internal algorithms for determining the physical parameters of the gyroscope resonator, for making

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Vaško, Alan. "Advantages of colour etching in quality control of graphitic cast irons." Production Engineering Archives 28, no. 4 (2022): 319–24. http://dx.doi.org/10.30657/pea.2022.28.40.

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Abstract Graphitic cast irons are the most important and most widely used materials for the production of castings. Increasing requirements for the quality of these castings lead to increased demands on the control of foundry production from raw materials through technological operations to the finished product. An integral part of this control process is structural analysis, because the properties of graphitic cast irons depend mainly on their structure (on the shape, size and number of graphitic particles and on the character of a metal matrix in which graphite occurs). The paper deals with

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S.P., Timoshenkov, Anchutin S.A., Zarjankin N.M., et al. "Research and Development of MEMS Accelerometer's Sensor." Nano- i Mikrosistemnaya Tehnika 23, no. 2 (2021): 63–67. http://dx.doi.org/10.17587/nmst.23.63-67.

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Currently, MEMS accelerometers are one of the most promising areas in the inertial sensor industry. The design and study of MEMS accelerometers structures is associated with solving problems of mathematical physics. Also, a very important task is to comply with the technological route, including carrying out such operations as deep etching of silicon. This article describes the modeling of the developed geometric model of the sensitive element MEMS accelerometer. The calculations were carried out, which showed that the developed structure is efficient. As a result of the study of the Bosch pro

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Jurečka, Stanislav, Kentaro Imamura, Taketoshi Matsumoto, and Hikaru Kobayashi. "Properties of nanocrystalline Si layers embedded in structure of solar cell." Journal of Electrical Engineering 68, no. 7 (2017): 48–52. http://dx.doi.org/10.1515/jee-2017-0055.

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AbstractSuppression of spectral reflectance from the surface of solar cell is necessary for achieving a high energy conversion efficiency. We developed a simple method for forming nanocrystalline layers with ultralow reflectance in a broad range of wavelengths. The method is based on metal assisted etching of the silicon surface. In this work, we prepared Si solar cell structures with embedded nanocrystalline layers. The microstructure of embedded layer depends on the etching conditions. We examined the microstructure of the etched layers by a transmission electron microscope and analysed the

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Urgoiti, Lander, David Barrenetxea, Jose Antonio Sánchez, and Jose Luis Lanzagorta. "Detailed Thermo-Kinematic Analysis of Face Grinding Operations with Straight Wheels." Metals 10, no. 4 (2020): 524. http://dx.doi.org/10.3390/met10040524.

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This paper presents a new model that relates thermal aspects with process kinematics in face grinding applications with straight wheels. Changes in chip thickness along the contact area were considered in the model, which allows for taking into account local thermal effects. The model was validated through grinding tests conducted with conventional alumina wheels. Power signals were used as input for the model. Thermal damage on the ground surface was detected using eddy current technology and revealed by acid etching. Both the model and experimental findings provide the basis for developing a

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Santos, George Sampaio Bonates dos, Rayenne Augusta Mota Ferreira, Bruno Luis Lima Soares, et al. "Self-conditioning adhesives in pediatric dentistry: an integrative literature review." Research, Society and Development 11, no. 10 (2022): e580111033183. http://dx.doi.org/10.33448/rsd-v11i10.33183.

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As clinical time must be taken into account in pediatric dental care, the use of self-etching accessories is the best alternative for restorative procedures in this population. Cons suitable accessories, which require a conditioning time, self-etching accessories and time separators with the number of steps and the number of steps required. However, this theme is still not clear in the literature. Thus, the objective of this integrative literature review was to compare, in relation to their clinical performance and their adhesive properties, self-etching accessories compared to the performance

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Pereira, Roberta Pinto, Renan Dias Carvalho, Carolina Mayumi Cavalcanti Taguchi, Sylvio Monteiro Jr, and Renata Gondo. "Hydrofluoric acid concentration and etching time on bond strength to lithium disilicate glass-ceramic." Research, Society and Development 10, no. 17 (2021): e215101724776. http://dx.doi.org/10.33448/rsd-v10i17.24776.

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The objective of this study to evaluate the effect of different HF concentrations and etching times on the microshear bond strength (μSBS) of LD to resin cement. Forty LD sections (8x8 mm) of 3-mm thickness were randomly distributed (n=10) in accordance with the HF concentration (5 or 10%) and surface etching time (20 or 60 sec). The specimens were silanized and received an air-thinned layer of a light-curable adhesive. Six translucent tubes (0.8-mm diameter and 1-mm height) were positioned over each LD section, filled with resin cement and light-cured. After 24 h of storage, the tubes were ca

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Kukurudziak, M. S. "Problems of chemical-dynamic polishing in the technology of silicon p-i-n photodiodes." Himia, Fizika ta Tehnologia Poverhni 14, no. 1 (2023): 42–52. http://dx.doi.org/10.15407/hftp14.01.042.

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During the preparation of silicon substrates for the manufacture of silicon p-i-n photodiodes, the effect of the presence of chemical-dynamic polishing and the depth of etching on the electrical parameters of the FD was observed. The quality of the polishing operation also affected the optical and photoelectric parameters of the samples. These effects required detailed study. The article investigates defect formation during the operation of chemical-dynamic polishing in the technology of silicon p-i-n FDs and determines the optimal modes of polishing the front and back sides of the substrates.

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Cheremnykh, A. D., A. A. Sergienko, and D. B. Pushkin. "Settings of a monolithic piezoelectric filter on bulk acoustic waves by ion-beam etching." Industrial laboratory. Diagnostics of materials 89, no. 8 (2023): 31–37. http://dx.doi.org/10.26896/1028-6861-2023-89-8-31-37.

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The process of tuning of the piezoelectric filter consists in lowering the frequencies of the resonators as a result of removing the electrode layer by means of ion-beam etching (IBE) in an inert gas atmosphere. It is necessary to control frequencies of the first and second resonators, as well as the frequency spacing (distance between frequencies of the upper and lower resonances of the piezo system), dynamic impedance of partial resonators and insertion attenuation. We present the results of using ion-beam etching in tuning monolithic piezoelectric filters on volumetric acoustic waves. It is

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Golovanov, Anton V., Nicolay V. Luparev, and Boris P. Sorokin. "MODIFICATION OF DIAMOND SURFACE DURING PHOTOLITHOGRAPHY, PLASMA-CHEMICAL CLEANING, AND MAGNETRON DEPOSITION." IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA KHIMICHESKAYA TEKHNOLOGIYA 63, no. 11 (2020): 49–56. http://dx.doi.org/10.6060/ivkkt.20206311.6232.

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An influence of the conventional planar technology of the semiconductor surface treatment operations (photolithography, plasma-chemical surface cleaning in radio frequency low-pressure oxygen discharge, and thin metal films growth) on monocrystalline diamond surface topography and roughness is investigated. It is preliminary shown that photolithography without the plasma cleaning and magnetron deposition of an aluminum film do not induce any diamond surface changes which could be found by the optical profilometry, electron and optical microscopy. However, as a result of the lithography some or

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Scalera, Lorenzo, Giona Canever, Stefano Seriani, Alessandro Gasparetto, and Paolo Gallina. "Robotic Sponge and Watercolor Painting Based on Image-Processing and Contour-Filling Algorithms." Actuators 11, no. 2 (2022): 62. http://dx.doi.org/10.3390/act11020062.

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In this paper, the implementation of a robotic painting system using a sponge and the watercolor painting technique is presented. A collection of tools for calibration and sponge support operations was designed and built. A contour-filling algorithm was developed, which defines the sponge positions and orientations in order to color the contour of a generic image. Finally, the proposed robotic system was employed to realize a painting combining etching and watercolor techniques. To the best of our knowledge, this is the first example of robotic painting that uses the watercolor technique and a

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KOTOMCHIN, A. N., and N. I. KORNEYCHUK. "PRODUCTION RECOMMENDATIONS FOR THE USE OF CHROME PLATING ELECTROLYTE IN THE CONDITIONS OF PRIDNESTROVIAN ENTERPRISES." World of transport and technological machines 74, no. 3 (2021): 24–34. http://dx.doi.org/10.33979/2073-7432-2021-74-3-24-34.

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The article provides scientifically based recommendations for the use of the developed cold self-regulating chromium-plating electrolyte in the restoration and strengthening of machine parts. These recommendations will help to effectively use the developed electrolyte and the stand-ard technological process of strengthening and restoring machine parts in production conditions, while eliminating defects and increased material costs when applying chrome coatings. They re-flect the features of performing operations that affect the level of reliability of the technological process (pre-machining,

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Li, Rulin, Yongjie Zhang, Yi Zhang, Wang Liu, Yaguo Li, and Hui Deng. "Plasma-based isotropic etching polishing of synthetic quartz." Journal of Manufacturing Processes 60 (December 2020): 447–56. http://dx.doi.org/10.1016/j.jmapro.2020.10.075.

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Yang, Rongxiang, Zhiheng Wang, Weixing Hua, Donghai He, Guoying Pan, and Zhaozhong Yang. "Numerical Simulation of Acid Leakoff in Fracture Walls Based on an Improved Dual-Scale Continuous Model." Processes 13, no. 6 (2025): 1771. https://doi.org/10.3390/pr13061771.

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Controlling fluid loss during acid fracturing remains challenging, as acid may partially or completely leak into reservoir pores and fractures, preventing effective flow within the formation and thereby reducing stimulation effectiveness. The acid leakoff mechanism is fundamentally distinct from that of non-reactive pad fluid (fracturing fluid), with the most critical distinction manifested through wall-confined acid-etched wormholes formed during reactive flow processes, which exert a dominant influence on acid filtration behavior. To address this challenge, a modified dual-scale continuum mo

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Alias, Ezzah Azimah, Muhammad Esmed Alif Samsudin, Steven DenBaars, James Speck, Shuji Nakamura, and Norzaini Zainal. "N-face GaN substrate roughening for improved performance GaN-on-GaN LED." Microelectronics International 38, no. 3 (2021): 93–98. http://dx.doi.org/10.1108/mi-02-2021-0011.

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Purpose This study aims to focus on roughening N-face (backside) GaN substrate prior to GaN-on-GaN light-emitting diode (LED) growth as an attempt to improve the LED performance. Design/methodology/approach The N-face of GaN substrate was roughened by three different etchants; ammonium hydroxide (NH4OH), a mixture of NH4OH and H2O2 (NH4OH: H2O2) and potassium hydroxide (KOH). Hexagonal pyramids were successfully formed on the surface when the substrate was subjected to the etching in all cases. Findings Under 30 min of etching, the highest density of pyramids was obtained by NH4OH: H2O2 etchin

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Tsuchitani, Shigeki, Kunitomo Kikuchi, Ippei Shimizu, Tomohisa Taniguchi, and Hirofumi Miki. "IPMC Actuators Fabricated Using MEMS Technology." Advances in Science and Technology 97 (October 2016): 57–60. http://dx.doi.org/10.4028/www.scientific.net/ast.97.57.

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Fabrication of ionic polymer metal composite (IPMC) on Si substrate and micromachining of IPMC are basic technologies for developing MEMS devices using IPMC. Adhesion of IPMC with the substrate is essential to fabricate IPMC on the substrate. Swelling of IPMC with water makes IPMC peel from the substrate due to the internal stress. To enlarge adhesion force of IPMC with the Si substrate, we have fabricated IPMC on an anodic-oxidized porous Si surface, which dramatically increased adhesion area between the IPMC and the substrate. Fabricated IPMC didn't peel from the Si substrate during the oper

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Osipov, Artem A., Gleb A. Iankevich, Armenak A. Osipov, et al. "Silicon carbide dry etching technique for pressure sensors design." Journal of Manufacturing Processes 73 (January 2022): 316–25. http://dx.doi.org/10.1016/j.jmapro.2021.11.010.

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Chen, Heping, and John Leclair. "Optimizing etching process recipe based on Kernel Ridge Regression." Journal of Manufacturing Processes 61 (January 2021): 454–60. http://dx.doi.org/10.1016/j.jmapro.2020.11.022.

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Zhang, Chengyi, Wen Zhang, and Yuxin Wang. "Diffusion Dialysis for Acid Recovery from Acidic Waste Solutions: Anion Exchange Membranes and Technology Integration." Membranes 10, no. 8 (2020): 169. http://dx.doi.org/10.3390/membranes10080169.

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Inorganic acids are commonly used in mining, metallurgical, metal-processing, and nuclear-fuel-reprocessing industries in various processes, such as leaching, etching, electroplating, and metal-refining. Large amounts of spent acidic liquids containing toxic metal ion complexes are produced during these operations, which pose a serious hazard to the living and non-living environment. Developing economic and eco-friendly regeneration approaches to recover acid and valuable metals from these industrial effluents has focused the interest of the research community. Diffusion dialysis (DD) using an

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Borgoni, Riccardo, and Diego Zappa. "Model‐based process capability indices: The dry‐etching semiconductor case study." Quality and Reliability Engineering International 36, no. 7 (2020): 2309–21. http://dx.doi.org/10.1002/qre.2698.

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Kravchenko, K., and G. Tulsky. "THE INFLUENCE OF THE ANODE MATERIAL ON THE COURSE OF COMBINED PROCESSES DURING THE REGENERATION OF SULPHATE-ACID SOLUTIONS." Bulletin of the National Technical University "KhPI". Series: Chemistry, Chemical Technology and Ecology 2, no. 8 (2022): 45–50. http://dx.doi.org/10.20998/2079-0821.2022.02.06.

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The existing methods of regeneration of sulfo-acidic solutions, which contain iron sulfate, formed after technological operations for the preparation and etching of metal parts at metalworking enterprises are not effective and therefore are not used at Ukrainian enterprises. They are either aimed at sedimentation of the sludge of sparingly soluble iron compounds after neutralization of unreacted sulfuric acid or at dilution of the formed spent sulfo-acid solutions. The electrochemical method of regeneration of such spent sulfo-acid solutions is not properly researched. A feature of the develop

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Li, Xingyu, Lulu Guan, Jiuru Gao, Jie Yuan, Kaidong Xu, and Shiwei Zhuang. "Improving broad-beam ion etching equipment through innovative ion optics design." Journal of Manufacturing Processes 102 (September 2023): 839–48. http://dx.doi.org/10.1016/j.jmapro.2023.08.014.

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Chen, Gang, Hao Jiang, Shi Chang Zhong, and Song Bai. "Fabrication of L Band 4H-SiC SIT Devices." Applied Mechanics and Materials 347-350 (August 2013): 1663–67. http://dx.doi.org/10.4028/www.scientific.net/amm.347-350.1663.

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Silicon carbide (SiC) static induction transistors (SITs) were fabricated using home-grown epi structures. The gate is a recessed gate - bottom contact (RG - B). The mesa space designed is 2.5 μm and the gate channel is 1.0 μm. The developed devices adopted a p-type Al ion implanted gate and power performance was improved by decreased leakage current and enhanced break-down voltage. The lift-off with assistant dielectric, dense gate recess etching, high temperature anneals and PECVD passivation process technologies are adopted. One cell has 200 source fingers and each source finger width is 50

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Gusev, E. E., D. V. Vertyanov, N. A. Djuzhev, M. A. Makhiboroda, and S. P. Timoshenkov. "Temporary Bonding Technology for Integration of Wafers of Different Diameters." Nano- i Mikrosistemnaya Tehnika 24, no. 10 (2022): 230–36. http://dx.doi.org/10.17587/nmst.24.230-236.

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The research paper describes the technology of temporary bonding for carrying out technological operations with semiconductor wafers with a diameter of 100 mm or less on equipment for a wafer diameter of 150 mm. The main technological processes for manufacturing a silicon substrate 300 μm thick with blind microholes (vertical grooves) 100 μm in diameter using temporary bonding technology are presented. Investigations of the elemental analysis of the formed structure of metals in blind microholes were carried out on the basis of spectral ellipsometry. Metallization was carried out by a combinat

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Soares, Manuella Uilmann Silva da Costa, Laís Maciel Costa, Leorik Pereira da Silva, Isabelle Lins Macêdo de Oliveira, Márcia Maria Fonseca da Silveira, and Ana Paula Veras Sobral. "Influence of the adhesive bonding protocol on the inflammatory cellular response and gelatinolytic activity in human teeth." Research, Society and Development 10, no. 9 (2021): e56610918552. http://dx.doi.org/10.33448/rsd-v10i9.18552.

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The aim of this paper was to assess the biocompatibility and expression of metalloproteinase -9 of two dentin bonding agents in human teeth, using different methods of dentin pre-treatment and different time intervals. Deep Class I cavities were prepared on the occlusal surface of 18 sound molars. Restorations were performed with XP Bond™ (Dentsply) and Futurabond® DC (VOCO). After 30, 90 or 120 days, the teeth were extracted and processed for histological and immunohistochemical assessment. In XP Bond group, was observed a moderate inflammatory infiltrate and immunoreactivity of metalloprotei

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Zhang, Linfeng, Dong Lu, and Hui Deng. "Study on material removal mechanisms in electrochemical etching-enhanced polishing of GaN." Journal of Manufacturing Processes 73 (January 2022): 903–13. http://dx.doi.org/10.1016/j.jmapro.2021.11.059.

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Rubbi, Fazlay, Xing Zhang, Fatemeh Delzendehrooy, et al. "Chemical etching enhanced nanosecond pulsed laser micromachining: An experimental and numerical investigation." Journal of Manufacturing Processes 108 (December 2023): 384–94. http://dx.doi.org/10.1016/j.jmapro.2023.11.017.

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Sano, Hiroki, Yutaka Kazoe, Kyojiro Morikawa, and Takehiko Kitamori. "Picoliter liquid operations in nanofluidic channel utilizing an open/close valve with nanoscale curved structure mimicking glass deflection." Journal of Micromechanics and Microengineering 32, no. 5 (2022): 055009. http://dx.doi.org/10.1088/1361-6439/ac6204.

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Abstract Microfluidics has downscaled to nanofluidics to achieve state-of-the-art analyses at single/countable molecules level. In nanofluidic analytical devices, switching and partitioning reagents in nanochannels without contamination are essential operations. For such operations, we have developed a nanochannel open/close valve utilizing elastic glass deformation. However, owing to a rectangular-shaped nanospace, sample leakage due to diffusion through the remaining open space in the closed valve occurs and causes contamination. Herein, we propose a fabrication method of nanoscale curved st

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Fraga, May Anny Alves, Daniela Feu Rosa Kroeff de Souza Laignier, Carolina Sandra Yamashita Garfias, Américo Bortolazzo Correr, Licia Pacheco Teixeira, and Juliana Malacarne-Zanon. "Effect of extended application time of universal adhesives on bond strength of brackets and enamel integrity." Research, Society and Development 10, no. 13 (2021): e199101320832. http://dx.doi.org/10.33448/rsd-v10i13.20832.

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The objective of this study to evaluate the effect of universal adhesives application time to enamel through shear bond strength (SBS), adhesive remnant index (ARI), and morphological enamel integrity. Bovine incisors were divided into four groups according to bonding system protocol (n=20): (1) conventional etch-and-rise adhesive – Transbond XT Primer (P-XT); (2) one-step self-etching adhesive – Transbond Self Etching Primer (T-SEP); (3) one universal adhesive – Single Bond Universal, which were rubbed for 20s (SBU-20) or (4) 40s (SBU-40). Transbond XT composite was used to bond the brackets

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Кукурудзяк, Микола. "Technology of Silicon p-i-n Photodiodes with a Reduced Number of Thermal Operations." Security of Infocommunication Systems and Internet of Things, no. 1 (June 30, 2023): 01002. http://dx.doi.org/10.31861/sisiot2023.1.01002.

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The main parameters of the p-i-n photodiodes (PD) are responsivity, dark current and capacity of responsive elements (RE). To ensure the maximum values of the specified parameters, it is necessary to use defect-free silicon with the maximum values of resistivity and life time of minor charge carriers. These characteristics of the starting material degrade during high-temperature thermal operations. Therefore, it is worth using a technology that allows you to avoid the degradation of silicon characteristics. This can be implemented by reducing the temperature of diffusion and oxidation operatio

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