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Journal articles on the topic 'Etcw.r'

Author: Grafiati

Published: 26 July 2024

Last updated: 31 July 2025

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1

Sheng, Lin. "The Simulation Application for the Structure Design of the Etcher Nozzle." Applied Mechanics and Materials 249-250 (December 2012): 372–77. http://dx.doi.org/10.4028/www.scientific.net/amm.249-250.372.

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With the higher and higher etching rate, the flow field situation of the plasma etching chamber became an important factor to design the etcher chamber structure. This paper studied the etcher nozzle structure in detail by using the flow simulation technology to analyze how to get uniform follow field on the surface of the etching wafer, and then this paper determined the structure parameters of the etcher nozzle.

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2

Xu, Xia, Juan Feng, and Ling Tian. "Modeling and Optimization of Process Parameters of a DF-CCP Etcher Chamber." Key Engineering Materials 572 (September 2013): 213–16. http://dx.doi.org/10.4028/www.scientific.net/kem.572.213.

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Dual-frequency capacitively coupled plasma (DF-CCP) etcher has become the mainstream in dielectric etcher. By building a 2D axisymmetric model of 300mm DF-CCP etcher in CFD-ACE+ software, plasma simulation experiments are carried out by orthogonal design. Then a process model based on simulation results is proposed to analysis influence of key process parameters including high frequency voltage, low frequency voltage, and chamber pressure and center/edge flow ratio on chamber plasma characteristics. Finally, to get high plasma uniformity and plasma density, process optimizations are carried ou

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3

Duan, Wen Rui, and Ling Tian. "Surrogate Modeling and Optimizing for CCP Etch Process." Applied Mechanics and Materials 670-671 (October 2014): 548–53. http://dx.doi.org/10.4028/www.scientific.net/amm.670-671.548.

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In order to analyze performance of the Capacitively Coupled Plasma (CCP) etcher, commercial software like OPTIMUS can be applied to approximate etch process model by Response Surface Method (RSM) or Radial Basis Functions (RBF). Multi-factor parameters are concerned in etch process, like frequencies of the dual Radio Frequency system (RF) and flow rate and flow ratio of the process gas. When facing the multi-dimensional problem, the algorithms would turned to be inefficiency and the optimization process may be trapped in local minimum area or cannot converge because of oscillation. To improve

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4

Lee, Jongwon, Kilsun Roh, Sung-Kyu Lim, and Youngsu Kim. "Sidewall Slope Control of InP Via Holes for 3D Integration." Micromachines 12, no. 1 (2021): 89. http://dx.doi.org/10.3390/mi12010089.

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This is the first demonstration of sidewall slope control of InP via holes with an etch depth of more than 10 μm for 3D integration. The process for the InP via holes utilizes a common SiO2 layer as an InP etch mask and conventional inductively coupled plasma (ICP) etcher operated at room temperature and simple gas mixtures of Cl2/Ar for InP dry etch. Sidewall slope of InP via holes is controlled within the range of 80 to 90 degrees by changing the ICP power in the ICP etcher and adopting a dry-etched SiO2 layer with a sidewall slope of 70 degrees. Furthermore, the sidewall slope control of th

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5

Valenzuela, Terence D., Daniel W. Spaite, Lani L. Clark, Harvey W. Meislin, and Raymond O. Sayre. "Estimated Cost-Effectiveness of Dispatcher CPR Instruction via Telephone to Bystanders During Out-of-Hospital Ventricular Fibrillation." Prehospital and Disaster Medicine 7, no. 3 (1992): 229–33. http://dx.doi.org/10.1017/s1049023x00039558.

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AbstractHypothesis:Emergency cardiopulmonary resuscitation (CPR) instruction via telephone (ETCPR) is cost-effective compared to prehospital, emergency medical technician (EMT)/paramedic treatment alone of witnessed, ventricular fibrillation (VF) in adult patients.Methods:A total of 118 patients, age >18 years, with prehospital, witnessed ventricular fibrillation were studied. Patient data were extracted from hospital records, monitor-defibrillator recordings, paramedic reports, dispatching records, and telephone interviews with bystanders. No ETCPR was available during this period. The cos

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6

Shin, H., K. Noguchi, X. Y. Qian, N. Jha, G. Hills, and C. Hu. "Spatial distributions of thin oxide charging in reactive ion etcher and MERIE etcher." IEEE Electron Device Letters 14, no. 2 (1993): 88–90. http://dx.doi.org/10.1109/55.215117.

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7

Chen, Wei Kun, Wei Yu Chen, and Li Hui Jin. "Improvement of Edge Etcher System." Advanced Materials Research 1008-1009 (August 2014): 1144–47. http://dx.doi.org/10.4028/www.scientific.net/amr.1008-1009.1144.

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The edge etcher machine is fully automated with very dangerous chemical circumstance; the shortcoming is low capacity for production, it spends too much time on the centering process, we use vision system to reduce the time of centering process and increase the capacity of production.

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8

. "Micro-etcher met nieuwe technologie." TandartsPraktijk 27, no. 2 (2006): 167. http://dx.doi.org/10.1007/bf03072772.

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9

Yunogami, Takashi, Ken’etsu Yokogawa, and Tatsumi Mizutani. "Development of neutral‐beam‐assisted etcher." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 13, no. 3 (1995): 952–58. http://dx.doi.org/10.1116/1.579657.

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10

Gawkrodger, David J., and Fiona M. Lewis. "Isolated cobalt sensitivity in an etcher." Contact Dermatitis 29, no. 1 (1993): 46. http://dx.doi.org/10.1111/j.1600-0536.1993.tb04542.x.

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11

tk¡fxM, MkW HkwisUnz dqekj. "O;kikfjd —f"k fodkl ls tqM+h izca/kdh; leL;k,sa ,ao funkukRed lq>ko rFkk —f"k uokpkj." International Journal of Advance and Applied Research 4, no. 43 (2023): 121–26. https://doi.org/10.5281/zenodo.10554163.

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12

Jin, Li Hui, Guo Rui Wang, and Xiang Li. "Improvement of Japanese JAC Wafer Acid Etcher." Advanced Materials Research 531 (June 2012): 75–78. http://dx.doi.org/10.4028/www.scientific.net/amr.531.75.

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As fast development of semiconductor industry，equipment using PLC as main control unit has been widely used. Wafer chemical etching machine based on PLC control technology has some unreasonable design, causing the low process efficiency. After electronic control system upgrade, UPH is to increase 220%, water consumption is to decrease 39% and power consumption is to decrease 69%.

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13

Ji, Jing, Francis E. H. Tay, and Jianmin Miao. "Microfabricated hollow microneedle array using ICP etcher." Journal of Physics: Conference Series 34 (April 1, 2006): 1132–36. http://dx.doi.org/10.1088/1742-6596/34/1/187.

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14

Schramm, Jeff E., Dubravko I. Babic, Evelyn L. Hu, and James L. Merz. "Reactive ion etcher self‐bias voltage regulator." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 11, no. 5 (1993): 2858–59. http://dx.doi.org/10.1116/1.578655.

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15

Eslamian, Ladan, Ali Borzabadi-Farahani, Nasin Mousavi, and Amir Ghasemi. "The effects of various surface treatments on the shear bond strengths of stainless steel brackets to artificially-aged composite restorations." Australasian Orthodontic Journal 27, no. 1 (2011): 28–32. http://dx.doi.org/10.2478/aoj-2011-0006.

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Abstract Objective: To compare the shear bond strengths (SBS) of stainless steel brackets bonded to artificially-aged composite restorations after different surface treatments. Methods: Forty-five premolar teeth were restored with a nano-hybrid composite (Tetric EvoCeram), stored in deionised water for one week and randomly divided into three equal groups: Group I, the restorations were exposed to 5 per cent hydrofluoric acid for 60 seconds; Group II, the restorations were abraded with a micro-etcher (50 μm alumina particles); Group III, the restorations were roughened with a coarse diamond bu

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16

Zhang, Zhi Hui, Shu Feng Liu, Ze Ming Sun, and Xiao Dong Yan. "Evaluation on Microstructure of Aluminum Alloys Dedicated to Plasma Etcher." Materials Science Forum 689 (June 2011): 343–49. http://dx.doi.org/10.4028/www.scientific.net/msf.689.343.

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The relationship between microstructure and anodic oxidation film on 6061 aluminum alloy dedicated to plasma etcher were mainly studied by OM, SEM and TEM. The results show that the quality of anodic oxidation film has close relationship with the microstructure of materials, the distribution of element and the morphology of secondary phases. The microstructure of foreign 6061 aluminum alloy is uniform, and there are not obviously segregation and cavity. Two kinds of secondary phases disperse over the grain, one is rich-Fe phase, and the other is Mg2Si. Certainly there are also few secondary ph

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17

Yajima, Dairi, Ken Nakagomi, Hitoshi Habuka, and Tomohisa Kato. "Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher." Materials Science Forum 821-823 (June 2015): 553–56. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.553.

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A SiC dry etcher using chlorine trifluoride (ClF3) gas was evaluated, particularly about the etching rate distribution. At 100%, the etching rate was high in the center region and was low in the outer region. However, that at 20% showed the opposite profile. This difference was considered to be due to the chlorine trifluoride gas distribution which was built above the gas distributor.

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18

Obaidi, Hussain, Amer Taqa, and Omar Al-Luzy. "Stainless steal orthodotic brackets recycling ( using micro–etcher )." Al-Rafidain Dental Journal 7, no. 2 (2007): 213–17. http://dx.doi.org/10.33899/rden.2007.39763.

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19

Sul, Yong-Tae, Eui-Yong Lee, and Hyuk-Min Kwon. "Matching Improvement of RF Matcher for Plasma Etcher." Journal of the Korea Academia-Industrial cooperation Society 9, no. 2 (2008): 327–32. http://dx.doi.org/10.5762/kais.2008.9.2.327.

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20

Wang, D., Y. Y. Zhang, Q. H. Han, et al. "Advanced STI Etch Process Development on NMC Etcher." ECS Transactions 60, no. 1 (2014): 349–54. http://dx.doi.org/10.1149/06001.0349ecst.

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21

Gross, M., Y. Wu, and C. M. Horwitz. "Blazed grating formation in a hollow cathode etcher." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7, no. 6 (1989): 3213–16. http://dx.doi.org/10.1116/1.576338.

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22

Ridge, Chris. "Tegal installs first etcher for 8 in. wafers." Vacuum 38, no. 1 (1988): 62. http://dx.doi.org/10.1016/0042-207x(88)90281-3.

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23

Pears, Kevin A., and Jens Stolze. "Carbon etching with a high density plasma etcher." Microelectronic Engineering 81, no. 1 (2005): 7–14. http://dx.doi.org/10.1016/j.mee.2005.02.002.

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24

Song, Jia, Xing Ke, Zhengning Li, et al. "(Digital Presentation) Uniformity and Profile Improvement of Fin Etching Process at Wafer Extreme Edge for Finfet Mass Production." ECS Meeting Abstracts MA2022-02, no. 18 (2022): 877. http://dx.doi.org/10.1149/ma2022-0218877mtgabs.

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The plasma sheath bending effect is widely observed in the wafer edge where the transition area to the edge ring is located. It is due to the electrical discontinuity and results in the difference in Ion Electron Angle Distribution (IEAD) between wafer extreme edge and inner wafer. As the aspect ratio increases during semiconductor scaling, the profile of etching is getting progressively sensitive to the sheath bending effect, resulting in a tilting profile or abnormal CD at the wafer's extreme edge. In our work, we presented a novel approach to improve the process capability to control the un

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25

Turner, Gail, Gabriela Diaz, Andreia Costa та ін. "200 TGFβ-armoring boosts potency and persistence of engineered TCR T cells, unlocking superior efficacy against HPV-positive solid tumors". Journal for ImmunoTherapy of Cancer 9, Suppl 2 (2021): A211. http://dx.doi.org/10.1136/jitc-2021-sitc2021.200.

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BackgroundAdoptive transfer of chimeric antigen receptor (CAR)-expressing T cells targeting cell surface antigens has shown remarkable success in hematological malignancies. However, only limited success has been achieved to date with CAR T cells, or their engineered T cell receptor (eTCR) counterparts, in the context of solid tumors. This is largely due to: 1) challenges in identifying highly expressed, tumor-specific antigens and; 2) the immune-suppressive tumor microenvironment mediated by cellular and secreted factors such as TGFβ, known to suppress intra-tumoral immunity and notably eleva

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26

Yakupov, A., R. Aкhunov, A. Subhangulov, and V. Bajburin. "JUSTIFICATION OF THE DESIGN OF AN EXPERIMENTAL DEVICE FOR PRE-SOWING PREPARATION OF SEED MATERIAL." RUSSIAN ELECTRONIC SCIENTIFIC JOURNAL 37, no. 3 (2020): 46–55. http://dx.doi.org/10.31563/2308-9644-2020-37-3-46-55.

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An experimental etcher – inlayer of potato tubers is proposed, containing a chamber for coating tubers with a liquid preparation, with a sieve and a centrifugal spray installed in it, and a chamber for coating with a powdered preparation. A model that is as close as possible to the real process is constructed and justified, a visualization of the process is obtained on its basis, and optimal operating modes are established. Conclusions are given based on the research results.

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27

TANAKA, Junichi. "Spatial Distribution of Plasma and Radicals in Dry Etcher." Journal of the Vacuum Society of Japan 52, no. 9 (2009): 498–503. http://dx.doi.org/10.3131/jvsj2.52.498.

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28

Cheong, Hee-Woon. "Newly Designed Ion Beam Etcher with High Etch Rate." Journal of Magnetics 20, no. 4 (2015): 366–70. http://dx.doi.org/10.4283/jmag.2015.20.4.366.

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29

Obaidi, Hussain, Amer Taqa, and Omar AL-Luazy. "Reconditioning of Debonded Pure Titanium Bracket (Using Micro–etcher)." Al-Rafidain Dental Journal 8, no. 1 (2008): 6–10. http://dx.doi.org/10.33899/rden.2008.9040.

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30

Goto, H. H., T. Ohmi, H. D. Lowe, K. Y. Fung, and S. G. Newberry. "A proposed magnetically enhanced reactive ion etcher for ULSI." IEEE Transactions on Semiconductor Manufacturing 5, no. 4 (1992): 337–46. http://dx.doi.org/10.1109/66.175366.

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31

Budge, T., S. Craven, S. Duran, J. T. Pearson, R. Welch, and M. Wossum. "PARSEC-process analysis with recipe support for etcher control." IEEE Transactions on Semiconductor Manufacturing 3, no. 1 (1990): 28–32. http://dx.doi.org/10.1109/66.47973.

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32

Ideno, Takuya, and Takanori Ichiki. "Maskless etching of microstructures using a scanning microplasma etcher." Thin Solid Films 506-507 (May 2006): 235–38. http://dx.doi.org/10.1016/j.tsf.2005.08.271.

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33

Ozaki, Yoshiharu, and Masakatsu Kimizuka. "Cross-Contamination from Etching Materials in Reactive Ion Etcher." Japanese Journal of Applied Physics 36, Part 1, No. 5A (1997): 2633–37. http://dx.doi.org/10.1143/jjap.36.2633.

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34

Jacobs, John, Kazumi Saito, and Jiro Yamamoto. "High Density Aluminum Etcher Process Window Characterization and Comparison." Japanese Journal of Applied Physics 37, Part 1, No. 4B (1998): 2359–68. http://dx.doi.org/10.1143/jjap.37.2359.

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35

Ayón, A. A., R. Braff, C. C. Lin, H. H. Sawin, and M. A. Schmidt. "Characterization of a Time Multiplexed Inductively Coupled Plasma Etcher." Journal of The Electrochemical Society 146, no. 1 (1999): 339–49. http://dx.doi.org/10.1149/1.1391611.

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36

Lo Presti, Vania, Angelo Meringa, Ester Dunnebach, et al. "Combining CRISPR-Cas9 and TCR exchange to generate a safe and efficient cord blood-derived T cell product for pediatric relapsed AML." Journal for ImmunoTherapy of Cancer 12, no. 4 (2024): e008174. http://dx.doi.org/10.1136/jitc-2023-008174.

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BackgroundHematopoietic cell transplantation (HCT) is an effective treatment for pediatric patients with high-risk, refractory, or relapsed acute myeloid leukemia (AML). However, a large proportion of transplanted patients eventually die due to relapse. To improve overall survival, we propose a combined strategy based on cord blood (CB)-HCT with the application of AML-specific T cell receptor (TCR)-engineered T cell therapy derived from the same CB graft.MethodsWe produced CB-CD8+T cells expressing a recombinant TCR (rTCR) against Wilms tumor 1 (WT1) while lacking endogenous TCR (eTCR) express

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37

Carvajal, Adrian Lawrence, Ericson Matias, Jay Sario, and Bernardo Bondoc. "International Journal of Open-access, Interdisciplinary and New Educational Discoveries of ETCOR Educational Research Center (iJOINED ETCOR)." International Journal of Open-access, Interdisciplinary and New Educational Discoveries of ETCOR Educational Research Center (iJOINED ETCOR) 4, no. 1 (2025): 611–32. https://doi.org/10.63498/nxz2st241.

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Abstract Aim: This study explored the limitations of the traditional Triple Bottom Line (TBL) framework—People, Planet, and Profit—in guiding Corporate Social Responsibility (CSR) and assessed the viability of an expanded model integrating Purpose, Partnerships, and Policy. The research aimed to determine the extent to which the additional three dimensions contribute to the effectiveness and sustainability of CSR initiatives and whether demographic and professional profiles influence perceptions of this expanded framework. The study also sought to identify strategic recommendations to enhance

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38

Zhu, Yongqiong. "Evaluation of practical teaching in Artistic Design based on FCE model." Advances in Education, Humanities and Social Science Research 8, no. 1 (2023): 147. http://dx.doi.org/10.56028/aehssr.8.1.147.2023.

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In this paper, a fuzzy multi-criteria evaluation model is developed to study the practice teaching level in artistic design of higher education . We propose a fuzzy, multi-criteria, multi-layer evaluation model constructed with students, teachers, teaching environment, etc.We take the digital media art major in S University to apply the model, and evaluate its practical teaching score to be 81.892, indicating a good level. The assessment results provide reference for improving the quality of practical teaching in the design major.

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39

Peralta Ardila, María del Pilar, and José Fernando Sánchez Salcedo. "Apropiación y orden espacial en los ETCR La Fila y El Oso, Tolima, Colombia." Investigación & Desarrollo 30, no. 01 (2022): 198–248. http://dx.doi.org/10.14482/indes.30.1.303.662.

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Tras la firma del acuerdo de paz entre el Gobierno colombiano y las FARC-EP se destinaron alrededor del país algunos Espacios Territoriales de Capacitación y Reincorporación (ETCR) como parte del proceso de reincorporación de los excombatientes, cuyo desa-rrollo y consecución ha tenido grandes dificultades para alcanzar lo pactado en el marco del proceso de paz (demoras, negligencias, rutas claras de reincorporación, seguridad, tensiones políticas). Con base en un trabajo de campo en dos ETCR, uno en la vereda La Fila y otro en El Oso, en el departamento del Tolima, conversamos con algunos fir

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40

VOSHCHENKOV, A. M. "PLASMA ETCHING PROCESSES FOR GIGAHERTZ SILICON INTEGRATED CIRCUITS (Part 2)." International Journal of High Speed Electronics and Systems 02, no. 01n02 (1991): 45–88. http://dx.doi.org/10.1142/s0129156491000041.

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In the preceding paper of this series, “Fundamentals of plasma etching for silicon technology (Part 1)”,1 a historical perspective of the evolution of plasma etching, its relationship to lithography needs, basic characteristics of plasma etching, advantages over wet chemical processing, and a practical viewpoint of the underlying fundamental concepts of plasma physics and chemistry were presented. In this paper, original work in plasma etcher design and a variety of process applications to multigigahertz rate silicon technology as practiced in Bell Laboratories, Holmdel, are described.

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41

Lee, Jong Woo, Hyoun Woo Kim, Jeong Whan Han, et al. "Plasma Etching for the Application to Low-K Dielectrics Devices." Materials Science Forum 555 (September 2007): 113–18. http://dx.doi.org/10.4028/www.scientific.net/msf.555.113.

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We present a study of the photoresist (PR) etching and the low-k materials damage using a ferrite-core inductively coupled plasma (ICP) etcher, in order to develop an etching process for the low-k dielectric devices. We reveal that the N2/O2 flow ratio and bias power affected the PR etching rate. By Fourier transform infrared spectroscopy and HF dipping test, we investigated the effect of the gas flow ratio and bias power on the amount of etching damage to the low-k material.

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42

Papusha, Sergey, Filipp Kozhura, and Valeria Zhadko. "The Process of Ultra Low-Volume Seed Etching by an Experimental Device." MATEC Web of Conferences 346 (2021): 03114. http://dx.doi.org/10.1051/matecconf/202134603114.

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The main way to protect plants from diseases and pests is the treatment of seed material with pesticides. To achieve maximum efficiency from complex seed treatment, it is necessary to evenly distribute the drug over the surface of all available seeds. One of the conditions for operation of the etcher is the possibility of connecting to the compressor unit and the electricity network. The performance of the sprayer was studied depending on the pressure in the pneumatic system of the spraying device and the diameter of the feeding tube.

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43

Yajima, Dairi, Hitoshi Habuka, and Tomohisa Kato. "Development of Silicon Carbide Dry Etcher Using Chlorine Trifluoride Gas." Materials Science Forum 778-780 (February 2014): 738–41. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.738.

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A SiC dry etching reactor using chlorine trifluoride (ClF3) gas was designed and evaluated with the help of numerical calculations and experimental results. The etching rate was about 16 μm/min when the ClF3 gas concentration, the total flow rate and the SiC substrate temperature were 90%, 0.3 slm and 500 °C, respectively. The gas stream above the substrate surface was concluded to significantly affect the etching rate profile.

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44

Son, Gil-Su, Yong-Han Roh, Geun-Young Yeom, Su-Hong Kim, Myoung-Woon Kim, and Hyung-Chul Cho. "Optimizing Cleaning Period of Oxide Etcher Using Optical Emission Spectroscopy." Journal of the Korean Vacuum Society 20, no. 6 (2011): 416–21. http://dx.doi.org/10.5757/jkvs.2011.20.6.416.

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45

Cismaru, C., and J. L. Shohet. "Plasma vacuum ultraviolet emission in an electron cyclotron resonance etcher." Applied Physics Letters 74, no. 18 (1999): 2599–601. http://dx.doi.org/10.1063/1.123909.

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46

Venkatesan, Suresh P., Thomas F. Edgar, and Isaac Trachtenberg. "On the Dynamics of an Isothermal Radial‐Flow Plasma Etcher." Journal of The Electrochemical Society 136, no. 9 (1989): 2532–45. http://dx.doi.org/10.1149/1.2097461.

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47

Karulkar, Pramod C. "XPS/AES investigation of cross contamination in a plasma etcher." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, no. 3 (1985): 889. http://dx.doi.org/10.1116/1.583077.

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48

Goto, Haruhiro H., Hans‐Dirk Löwe, and Tadahiro Ohmi. "Dual excitation reactive ion etcher for low energy plasma processing." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10, no. 5 (1992): 3048–54. http://dx.doi.org/10.1116/1.577863.

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49

Ra, Yunju, Stephen G. Bradley, and Ching‐Hwa Chen. "Etching of aluminum alloys in the transformer‐coupled plasma etcher." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12, no. 4 (1994): 1328–33. http://dx.doi.org/10.1116/1.579316.

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50

Malyshev, M. V., V. M. Donnelly, A. Kornblit, N. A. Ciampa, J. I. Colonell, and J. T. C. Lee. "Langmuir probe studies of a transformer-coupled plasma, aluminum etcher." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17, no. 2 (1999): 480–92. http://dx.doi.org/10.1116/1.581609.

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