Relevant bibliographies by topics / Facteur de Huang-Rhys

Contents

  1. Journal articles
  2. Dissertations / Theses

Academic literature on the topic 'Facteur de Huang-Rhys'

Author: Grafiati
Published: 4 June 2021
Last updated: 16 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Facteur de Huang-Rhys.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Facteur de Huang-Rhys"

1

Baskoutas, S., and N. S. Athanasiou. "Huang–Rhys Factor of CdTe Semiconductors Doped with Arsenic and Antimony." Modern Physics Letters B 11, no. 12 (1997): 503–9. http://dx.doi.org/10.1142/s021798499700061x.

Full text
Abstract:
By using the evolution operator method, we report a careful derivation of the Huang–Rhys factor, based on the Fröhlich continuum model of polarons, for cadmium telluride (CdTe) semiconductors, doped with arsenic (As) and antimony (Sb) acceptors. The calculated values of the Huang–Rhys factor, agree well with the experimental data for the bands at 1.45 eV and 1.54 eV, at large enough (16.5 nm) and zero donor–acceptor pair separation, respectively. They predicted the form of the bands, and provide new insight for the interpretation of the experimental data in terms of sub-Poissonian or super-Poi
APA, Harvard, Vancouver, ISO, and other styles
2

Hou, Dejian, Huihong Lin, Yi Zhang, et al. "A broadband near-infrared phosphor BaZrGe3O9:Cr3+: luminescence and application for light-emitting diodes." Inorganic Chemistry Frontiers 8, no. 9 (2021): 2333–40. http://dx.doi.org/10.1039/d0qi01524e.

Full text
Abstract:
A broadband NIR luminescence material BaZrGe<sub>3</sub>O<sub>9</sub>:Cr<sup>3+</sup> was designed, the crystal field parameters and Huang–Rhys factor were calculated to evaluate the luminescence. The potential application for NIR pc-LED was demonstrated.
APA, Harvard, Vancouver, ISO, and other styles
3

Ballhausen, C. J. "Oscillating Huang-Rhys Factor in the Time-Relaxed Harmonic Oscillator." Journal of Physical Chemistry 98, no. 13 (1994): 3270–71. http://dx.doi.org/10.1021/j100064a004.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Магарян, К. А., К. Р. Каримуллин, И. А. Васильева та А. В. Наумов. "Анализ температурной зависимости спектров экситонной люминесценции квантовых точек селенида кадмия, выращенных в жидкокристаллической матрице-=SUP=-*-=/SUP=-". Журнал технической физики 126, № 1 (2019): 50. http://dx.doi.org/10.21883/os.2019.01.47052.283-18.

Full text
Abstract:
AbstractThe temperature dependences of the positions of maxima of exciton bands in the luminescence spectra of liquid crystal nanocomposites with CdSe quantum dots with sizes of 1.8 and 2.3 nm at T = 77–300 K have been analyzed. The analysis under the theoretical model taking into account the electron–phonon interaction inside quantum dots has made it possible to calculate the values of the Huang–Rhys factor and average phonon energy in nanocrystals under study.
APA, Harvard, Vancouver, ISO, and other styles
5

Światła, Dorota, and Witold M. Bartczak. "Calculation of the Huang-Rhys factor for electron capture by a neutral impurity." Physical Review B 43, no. 8 (1991): 6776–79. http://dx.doi.org/10.1103/physrevb.43.6776.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Moreno, M., M. T. Barriuso, and J. A. Aramburu. "The Huang-Rhys factor S(a1g) for transition-metal impurities: a microscopic insight." Journal of Physics: Condensed Matter 4, no. 47 (1992): 9481–88. http://dx.doi.org/10.1088/0953-8984/4/47/027.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Lin, Chen, Indrek Renge, and Ryszard Jankowiak. "Fluorescence line-narrowing difference spectra: Dependence of Huang–Rhys factor on excitation wavelength." Chemical Physics Letters 576 (June 2013): 15–20. http://dx.doi.org/10.1016/j.cplett.2013.05.017.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Zhang, Mei, Baohong Li, Jing Wang, Zhiyang Zhang, Qiuhong Zhang, and Qiang Su. "The temperature-dependent luminescence properties of BaAl2−xSixO4−xNx:Eu2+ and its application in yellowish-green light emitting diode." Journal of Materials Research 24, no. 8 (2009): 2589–95. http://dx.doi.org/10.1557/jmr.2009.0325.

Full text
Abstract:
The influences of (SiN)+ and Eu2+ concentration on the optical properties of BaAl2−xSixO4−xNx:Eu2+ were investigated. The lifetime results show that there are two different cation sites occupied by Eu2+ ions and the energy transfer occurs between them. The Huang–Rhys factor and the Stokes energy shift were determined, and thermal quenching with increasing temperature was observed. Finally, intense yellowish-green light emitting diodes (LED) with the color coordinate of (0.2936, 0.4483) under a forward-bias current of 20 mA was successfully fabricated on the basis of a structure consisting of B
APA, Harvard, Vancouver, ISO, and other styles
9

Baskoutas, S., and N. S. Athanasiou. "Determination of the Donor–Acceptor Pair Separation in GaP Semiconductor Doped with Sulfur and Zinc Using its Photoluminescence Spectrum." International Journal of Modern Physics B 11, no. 31 (1997): 3723–31. http://dx.doi.org/10.1142/s0217979297001908.

Full text
Abstract:
Considering the gallium phosphide (GaP) semiconductors doped with sulfur (S) and zinc (Zn) acceptors, we have studied the behavior of Huang-Rhys factor S theor as a function of the donor–acceptor (D–A) pair separation R. It turned out that the form of the bands — broad or narrow — that are attributed to (D–A) recombination, depends on the values of the pair separation — large or small, respectively. More specifically for R=0.5 nm we obtain S theor =0.117 and for R=3.5 nm, S theor =3.616. The above values of the factor S impose sub-Poissonian (with ℏω=49.97 meV) and super-Poissonian (with ℏω=78
APA, Harvard, Vancouver, ISO, and other styles
10

Lin, Zeguo, Wei Zheng та Feng Huang. "Narrow band emission from layered α-HgI2 micro-/nano-sheets with high Huang-Rhys factor". Journal of Luminescence 237 (вересень 2021): 118161. http://dx.doi.org/10.1016/j.jlumin.2021.118161.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "Facteur de Huang-Rhys"

1

Soltani, Mohammed. "Contribution à l'étude des états d'impuretés dans CdTe par spectroscopie de photoluminescence." Metz, 1994. http://docnum.univ-lorraine.fr/public/UPV-M/Theses/1994/Soltani.Mohammed.SMZ9412.pdf.

Full text
Abstract:
Cette étude est consacrée à la caractérisation par spectroscopie de photoluminescence aux très basses températures (hélium liquide) d'échantillons massifs de CdTe de type p élabores par la technique de Bridgman et dopés les uns à l'arsenic (67 ppm) et les autres à l'antimoine (137 ppm). La comparaison du spectre des échantillons dopés avec celui de l'échantillon témoin montre l'apparition d'une large bande à 1. 55 eV suivie de deux répliques phononiques. Dans ces spectres on observe également, indépendamment de la nature du dopant, la présence de la bande à 1. 45 eV qui est composée de la raie
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'Facteur de Huang-Rhys' for particular source types:
Journal articles
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography