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Journal articles on the topic 'Facteur de Huang-Rhys'

Author: Grafiati
Published: 4 June 2021
Last updated: 16 February 2022

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1

Baskoutas, S., and N. S. Athanasiou. "Huang–Rhys Factor of CdTe Semiconductors Doped with Arsenic and Antimony." Modern Physics Letters B 11, no. 12 (1997): 503–9. http://dx.doi.org/10.1142/s021798499700061x.

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By using the evolution operator method, we report a careful derivation of the Huang–Rhys factor, based on the Fröhlich continuum model of polarons, for cadmium telluride (CdTe) semiconductors, doped with arsenic (As) and antimony (Sb) acceptors. The calculated values of the Huang–Rhys factor, agree well with the experimental data for the bands at 1.45 eV and 1.54 eV, at large enough (16.5 nm) and zero donor–acceptor pair separation, respectively. They predicted the form of the bands, and provide new insight for the interpretation of the experimental data in terms of sub-Poissonian or super-Poi
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2

Hou, Dejian, Huihong Lin, Yi Zhang, et al. "A broadband near-infrared phosphor BaZrGe3O9:Cr3+: luminescence and application for light-emitting diodes." Inorganic Chemistry Frontiers 8, no. 9 (2021): 2333–40. http://dx.doi.org/10.1039/d0qi01524e.

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A broadband NIR luminescence material BaZrGe<sub>3</sub>O<sub>9</sub>:Cr<sup>3+</sup> was designed, the crystal field parameters and Huang–Rhys factor were calculated to evaluate the luminescence. The potential application for NIR pc-LED was demonstrated.
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3

Ballhausen, C. J. "Oscillating Huang-Rhys Factor in the Time-Relaxed Harmonic Oscillator." Journal of Physical Chemistry 98, no. 13 (1994): 3270–71. http://dx.doi.org/10.1021/j100064a004.

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4

Магарян, К. А., К. Р. Каримуллин, И. А. Васильева та А. В. Наумов. "Анализ температурной зависимости спектров экситонной люминесценции квантовых точек селенида кадмия, выращенных в жидкокристаллической матрице-=SUP=-*-=/SUP=-". Журнал технической физики 126, № 1 (2019): 50. http://dx.doi.org/10.21883/os.2019.01.47052.283-18.

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AbstractThe temperature dependences of the positions of maxima of exciton bands in the luminescence spectra of liquid crystal nanocomposites with CdSe quantum dots with sizes of 1.8 and 2.3 nm at T = 77–300 K have been analyzed. The analysis under the theoretical model taking into account the electron–phonon interaction inside quantum dots has made it possible to calculate the values of the Huang–Rhys factor and average phonon energy in nanocrystals under study.
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5

Światła, Dorota, and Witold M. Bartczak. "Calculation of the Huang-Rhys factor for electron capture by a neutral impurity." Physical Review B 43, no. 8 (1991): 6776–79. http://dx.doi.org/10.1103/physrevb.43.6776.

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6

Moreno, M., M. T. Barriuso, and J. A. Aramburu. "The Huang-Rhys factor S(a1g) for transition-metal impurities: a microscopic insight." Journal of Physics: Condensed Matter 4, no. 47 (1992): 9481–88. http://dx.doi.org/10.1088/0953-8984/4/47/027.

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7

Lin, Chen, Indrek Renge, and Ryszard Jankowiak. "Fluorescence line-narrowing difference spectra: Dependence of Huang–Rhys factor on excitation wavelength." Chemical Physics Letters 576 (June 2013): 15–20. http://dx.doi.org/10.1016/j.cplett.2013.05.017.

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8

Zhang, Mei, Baohong Li, Jing Wang, Zhiyang Zhang, Qiuhong Zhang, and Qiang Su. "The temperature-dependent luminescence properties of BaAl2−xSixO4−xNx:Eu2+ and its application in yellowish-green light emitting diode." Journal of Materials Research 24, no. 8 (2009): 2589–95. http://dx.doi.org/10.1557/jmr.2009.0325.

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The influences of (SiN)+ and Eu2+ concentration on the optical properties of BaAl2−xSixO4−xNx:Eu2+ were investigated. The lifetime results show that there are two different cation sites occupied by Eu2+ ions and the energy transfer occurs between them. The Huang–Rhys factor and the Stokes energy shift were determined, and thermal quenching with increasing temperature was observed. Finally, intense yellowish-green light emitting diodes (LED) with the color coordinate of (0.2936, 0.4483) under a forward-bias current of 20 mA was successfully fabricated on the basis of a structure consisting of B
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9

Baskoutas, S., and N. S. Athanasiou. "Determination of the Donor–Acceptor Pair Separation in GaP Semiconductor Doped with Sulfur and Zinc Using its Photoluminescence Spectrum." International Journal of Modern Physics B 11, no. 31 (1997): 3723–31. http://dx.doi.org/10.1142/s0217979297001908.

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Considering the gallium phosphide (GaP) semiconductors doped with sulfur (S) and zinc (Zn) acceptors, we have studied the behavior of Huang-Rhys factor S theor as a function of the donor–acceptor (D–A) pair separation R. It turned out that the form of the bands — broad or narrow — that are attributed to (D–A) recombination, depends on the values of the pair separation — large or small, respectively. More specifically for R=0.5 nm we obtain S theor =0.117 and for R=3.5 nm, S theor =3.616. The above values of the factor S impose sub-Poissonian (with ℏω=49.97 meV) and super-Poissonian (with ℏω=78
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10

Lin, Zeguo, Wei Zheng та Feng Huang. "Narrow band emission from layered α-HgI2 micro-/nano-sheets with high Huang-Rhys factor". Journal of Luminescence 237 (вересень 2021): 118161. http://dx.doi.org/10.1016/j.jlumin.2021.118161.

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11

Whalley, Lucy D., Puck van Gerwen, Jarvist M. Frost, Sunghyun Kim, Samantha N. Hood, and Aron Walsh. "Giant Huang–Rhys Factor for Electron Capture by the Iodine Intersitial in Perovskite Solar Cells." Journal of the American Chemical Society 143, no. 24 (2021): 9123–28. http://dx.doi.org/10.1021/jacs.1c03064.

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12

Булярский, С. В., В. С. Горелик, Г. Г. Гусаров, Д. А. Коива та А. В. Лакалин. "Влияние электрон-фононного взаимодействия на фотолюминесценцию оксида титана в ближней инфракрасной области". Журнал технической физики 128, № 5 (2020): 597. http://dx.doi.org/10.21883/os.2020.05.49315.239-19.

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The recombination center Ti+3-oxygen vacancy, which plays an important role in photocatalysis processes, was studied. When titanium oxide was excited by a laser with a wavelength of 785 nm, a photoluminescence band was observed with a maximum of 1.236 eV. This band appears after crystallization of an amorphous titanium dioxide film in vacuum at a temperature of 650° C for 30 min. The shape of the band was studied by the method of moments and the parameters of its electron-phonon interaction were determined: the energy of a purely electronic transition is 1.28 eV, the Huang and Rhys factor is 2
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13

Xu, Shi-Jie. "Huang-Rhys factor and its key role in the interpretation of some optical properties of solids." Acta Physica Sinica 68, no. 16 (2019): 166301. http://dx.doi.org/10.7498/aps.68.20191073.

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14

Siddique, Hassan, Zilong Xu, Xiangdong Li, et al. "Anomalous Octahedron Distortion of Bi-Alloyed Cs2AgInCl6 Crystal via XRD, Raman, Huang–Rhys Factor, and Photoluminescence." Journal of Physical Chemistry Letters 11, no. 22 (2020): 9572–78. http://dx.doi.org/10.1021/acs.jpclett.0c02852.

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15

Huo, Bingzhi, Lizhong Hu, Heqiu Zhang, Ziwen Zhao, Jiao Li, and Qiang Fu. "The Huang–Rhys factor and the strength of exciton–LO phonon coupling in ZnO/Mg0.15Zn0.85O superlattices." Materials Science in Semiconductor Processing 10, no. 6 (2007): 287–90. http://dx.doi.org/10.1016/j.mssp.2008.04.002.

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16

Meng Qing-Yu, Liu Zhi-Xin, and Sun Wen-Jun. "The experiments for obtaining Huang-Rhys factor and energy transfer rate of Gd2(WO4)3:Eu nanophosphor." Acta Physica Sinica 62, no. 9 (2013): 097801. http://dx.doi.org/10.7498/aps.62.097801.

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17

Kundrotas, J., A. Čerškus, S. Ašmontas та ін. "Impurity-induced Huang–Rhys factor in beryllium δ-doped GaAs/AlAs multiple quantum wells: fractional-dimensional space approach". Semiconductor Science and Technology 22, № 9 (2007): 1070–76. http://dx.doi.org/10.1088/0268-1242/22/9/016.

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18

Najam, Faraz, and Yun Seop Yu. "Compact Trap-Assisted-Tunneling Model for Line Tunneling Field-Effect-Transistor Devices." Applied Sciences 10, no. 13 (2020): 4475. http://dx.doi.org/10.3390/app10134475.

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Trap-assisted-tunneling (TAT) is a well-documented source of severe subthreshold degradation in tunneling field-effect-transistors (TFET). However, the literature lacks in numerical or compact TAT models applied to TFET devices. This work presents a compact formulation of the Schenk TAT model that is used to fit experimental drain-source current (Ids) versus gate-source voltage (Vgs) data of an L-shaped and line tunneling type TFET. The Schenk model incorporates material-dependent fundamental physical constants that play an important role in influencing the TAT generation (GTAT) including the
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19

Zhao, Hui, and H. Kalt. "Energy-dependent Huang-Rhys factor of free excitons." Physical Review B 68, no. 12 (2003). http://dx.doi.org/10.1103/physrevb.68.125309.

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20

Santos, Lucilia, and Estela Pereira. "Laser Emission from Natural Diamonds." MRS Proceedings 162 (1989). http://dx.doi.org/10.1557/proc-162-291.

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ABSTRACTThe red luminescence band which is a strong broad band that occurs in natural diamonds, showing a zero phonon line at 2.145 eV and a coupling to a nearly localized phonon of 30 meV with a Huang-Rhys factor of 10, and a constant intensity up to room temperature, is shown to present tunable stimulated emission at room temperature. The stability of the band towards strong pumping conditions is discussed. Another strong luminescent band (S3) is shown to present excited state absorption.
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21

Li, Donghai, Chiara Trovatello, Stefano Dal Conte, et al. "Exciton–phonon coupling strength in single-layer MoSe2 at room temperature." Nature Communications 12, no. 1 (2021). http://dx.doi.org/10.1038/s41467-021-20895-0.

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AbstractSingle-layer transition metal dichalcogenides are at the center of an ever increasing research effort both in terms of fundamental physics and applications. Exciton–phonon coupling plays a key role in determining the (opto)electronic properties of these materials. However, the exciton–phonon coupling strength has not been measured at room temperature. Here, we use two-dimensional micro-spectroscopy to determine exciton–phonon coupling of single-layer MoSe2. We detect beating signals as a function of waiting time induced by the coupling between A excitons and A′1 optical phonons. Analys
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22

Ziemann, E., S. D. Ganichev, I. N. Yassievich, K. Schmalzv, and W. Prettl. "Characterization of Deep Impurities in Semiconductors by Terahertz Tunnel Ionization." MRS Proceedings 510 (January 1998). http://dx.doi.org/10.1557/proc-510-595.

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AbstractThe ionization of deep impurity centers by high intensity far-infrared radiation, with photon energies tens of times lower than the impurity binding energy, has been investigated. It is shown that the ionization is caused by phonon-assisted tunneling in the electric field of radiation, in which carrier emission is accompanied by electron tunneling and defect tunneling in the configuration space. The field and temperature dependencies of the ionization probability allow to obtain defect parameters like tunneling times and the Huang-Rhys factor as well as the basic structure of the defec
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