Journal articles: 'Ferroelectric domain structure'

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Huyan, Huaixun, Linze Li, Christopher Addiego, Wenpei Gao, and Xiaoqing Pan. "Structures and electronic properties of domain walls in BiFeO3 thin films." National Science Review 6, no. 4 (2019): 669–83. http://dx.doi.org/10.1093/nsr/nwz101.

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Abstract Domain walls (DWs) in ferroelectrics are atomically sharp and can be created, erased, and reconfigured within the same physical volume of ferroelectric matrix by external electric fields. They possess a myriad of novel properties and functionalities that are absent in the bulk of the domains, and thus could become an essential element in next-generation nanodevices based on ferroelectrics. The knowledge about the structure and properties of ferroelectric DWs not only advances the fundamental understanding of ferroelectrics, but also provides guidance for the design of ferroelectric-based devices. In this article, we provide a review of structures and properties of DWs in one of the most widely studied ferroelectric systems, BiFeO3 thin films. We correlate their conductivity and photovoltaic properties to the atomic-scale structure and dynamic behaviors of DWs.

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DORFMAN, SIMON, DAVID FUKS, ALEX GORDON, and PETER WYDER. "WETTING OF THE FERROELECTRIC DOMAIN STRUCTURE IN (Ba,Sr)TiO3." Surface Review and Letters 06, no. 06 (1999): 1221–27. http://dx.doi.org/10.1142/s0218625x99001372.

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Wetting of the ferroelectric domain walls is studied in external magnetic fields and for composition changes in (Ba,Sr)TiO 3. We discuss the sensibility of the domain structure to concentration of alloying element in perovskite ferroelectrics. A considerable magnetic-field and concentration-induced variation of the ferroelectric domain size and the paraelectric layer width is demonstrated. The concentration-temperature "phase diagram," showing the range of the wetting existence, is calculated.

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Tan, Qi, Z. Xu, and Dwight Viehland. "Commonalties of the influence of lower valent A-site and B-site modifications on lead zirconate titanate ferroelectrics and antiferroelectrics." Journal of Materials Research 14, no. 2 (1999): 465–75. http://dx.doi.org/10.1557/jmr.1999.0067.

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Studies of the structure-property relations of lead zirconate titanate (PZT) modified with lower valent substitutions on the A- and B-sites have been performed as a function of substituent concentration. These investigations have yielded common changes induced by these substitutions on ferroelectric phases. The commonalties are the presence of fine domains and polarization pinning effects. Differences in domain morphologies were observed between the rhombohedral and tetragonal ferroelectric phases. Rhombohedral ferroelectrics were found to exhibit “wavy” domain patterns with increasing dopant concentrations, whereas a lenticular domain shape was preserved as the domain size was decreased for tetragonal ferroelectrics. These differences were explained in terms of different pinning mechanisms based on the differences in local elastic strain accommodations. Investigations of high Zr-content PZT have revealed that the ferroelectric rhombohedral phase becomes stabilized over the antiferroelectric orthorhombic with increasing concentrations of lower valent modifications. This change was explained in terms of the enhanced coupling between oxygen octahedra due to the bonding of oxygen-vacancy dipoles.

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Inoshita, Takumi, Yasuhide Inoue, Yoichi Horibe, and Yasumasa Koyama. "Features of the ferroelectric domain structure in the multiferroic material YbMnO3." MRS Advances 1, no. 9 (2016): 591–96. http://dx.doi.org/10.1557/adv.2016.154.

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ABSTRACTThe multiferroic material YbMnO3 has been reported to exhibit both ferroelectric and antiferromagnetic orders in the ground state. Of these two orders, the ferroelectric order is associated with the P63/mmc-to-P63cm structural transition, which occurs around 1270 K. The interesting feature of the ferroelectric state is that a cloverleaf domain structure with a pseudo-six-fold symmetry is observed in transmission electron microscopy images with the beam incidence parallel to the hexagonal axis. To understand the origin of the formation of the cloverleaf domain structure, we have examined the crystallographic features of the ferroelectric state in YbMnO3 by transmission electron microscopy. In this study, particularly, we adopted the experimental condition that electron beam incidences are perpendicular to the hexagonal axis. It was, as a result, found that there existed various ferroelectric domain structures including the cloverleaf domain structure under the present condition. The notable feature of domain structures found in this study is that each domain structure basically consists of six domains, whose domain boundaries are terminated at one point. Because this feature makes us reminiscent of a discommensurate structure in an incommensurate state, we took high-resolution electron micrographs of areas including domain boundaries. Their analysis indicated that a domain boundary could be identified as a discommensuration with a phase slip of π/3. It is thus understood that the cloverleaf domain structure should be one of domain morphologies for a discommensurate structure, which is related to the break of the translational symmetry.

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Gareeva, Z. V., and A. K. Zvezdin. "The Influence of Magnetoelectric Interactions on the Domain Walls in Multiferroics." Solid State Phenomena 190 (June 2012): 265–68. http://dx.doi.org/10.4028/www.scientific.net/ssp.190.265.

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The influence of magnetoelectric interactions on the magnetic structure, flexomagnetoelectric polarization and magnetization in thin multiferroics film has been investigated. The correlation between antiferromagnetic domain structure and ferroelectric domain pattern has been revealed. It has been shown the asymmetry of the antiferromagnetic vector distribution over multiferroics film in the case of 1090 and 710 ferroelectric domain walls. The direction of spins rotation in magnetic domain walls is determined by the type of ferroelectric domains and the antiferromagnetic vector in the centre of ferroelectric domain. The peculiarities of the micromagnetic distribution are reflected in the behavior of polarization and magnetization, which appears to be different for 1800, 1090 and 710 ferroelectric domains.

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Herber, Ralf-Peter, and Gerold A. Schneider. "Surface displacements and surface charges on Ba2CuWO6 and Ba2Cu0.5Zn0.5WO6 ceramics induced by local electric fields investigated with scanning-probe microscopy." Journal of Materials Research 22, no. 1 (2007): 193–200. http://dx.doi.org/10.1557/jmr.2007.0030.

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Ba2CuWO6 (BCW) was first synthesized in the mid 1960s, and it was predicted to be a ferroelectric material with a very high Curie temperature of 1200 °C [N. Venevtsev and A.G. Kapyshev: New ferroelectrics. Proc. Int. Meet. Ferroelectr.1, 261 (1966)]. Since then, crystallographic studies were performed on the compound with the result that its crystal structure is centrosymmetric. Thus for principal reason, BCW cannot be ferroelectric. That obvious contradiction was examined in this study. Disk-shaped ceramic samples of BCW and Ba2Cu0.5Zn0.5WO6 (BCZW) were prepared. Because of the low electrical resistivity of the ceramics, it was not possible to perform a typical polariszation hysteresis loop for characterization of ferroelectric properties. Scanning electron microscopy investigations strongly suggest that the reason for the conductivity is found in the impurities/precipitations within the microstructure of the samples. With atomic force microscopy (AFM) in piezoresponse force microscopy (PFM) mode, it is possible to characterize local piezoelectricity by imaging the ferroelectric domains. Neither BCW nor BCZW showed any domain structure. Nevertheless, when local electric fields were applied to the surfaces of the ceramics topographic displacements, imaged with AFM, and surface charges, imaged with Kelvin probe force microscopy (KFM) and PFM, were measured and remained stable on the surface for the time of the experiment. Therefore BCW and BCZW are considered to be electrets and possibly relaxor ferroelectrics.

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Kriegner, Dominik, Gunther Springholz, Carsten Richter, et al. "Ferroelectric Self-Poling in GeTe Films and Crystals." Crystals 9, no. 7 (2019): 335. http://dx.doi.org/10.3390/cryst9070335.

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Ferroelectric materials are used in actuators or sensors because of their non-volatile macroscopic electric polarization. GeTe is the simplest known diatomic ferroelectric endowed with exceedingly complex physics related to its crystalline, amorphous, thermoelectric, and—fairly recently discovered—topological properties, making the material potentially interesting for spintronics applications. Typically, ferroelectric materials possess random oriented domains that need poling to achieve macroscopic polarization. By using X-ray absorption fine structure spectroscopy complemented with anomalous diffraction and piezo-response force microscopy, we investigated the bulk ferroelectric structure of GeTe crystals and thin films. Both feature multi-domain structures in the form of oblique domains for films and domain colonies inside crystals. Despite these multi-domain structures which are expected to randomize the polarization direction, our experimental results show that at room temperature there is a preferential ferroelectric order remarkably consistent with theoretical predictions from ideal GeTe crystals. This robust self-poled state has high piezoelectricity and additional poling reveals persistent memory effects.

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Lisjikh, Boris, Mikhail Kosobokov, and Vladimir Shur. "The Creation of a Domain Structure Using Ultrashort Pulse NIR Laser Irradiation in the Bulk of MgO-Doped Lithium Tantalate." Photonics 11, no. 10 (2024): 928. http://dx.doi.org/10.3390/photonics11100928.

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The fabrication of stable, tailored domain patterns in ferroelectric crystals has wide applications in optical and electronic industries. All-optical ferroelectric poling by pulse laser irradiation has been developed recently. In this work, we studied the creation of the domain structures in MgO-doped lithium tantalate by focused irradiation with a femtosecond near-infrared laser. Cherenkov-type second harmonic generation microscopy was used for domain imaging of the bulk. We have revealed the creation of enveloped domains around the induced microtracks under the action of the depolarization field. The domain growth is due to a pyroelectric field caused by a nonuniform temperature change. The domains in the bulk were revealed to have a three-ray star-shaped cross-section. It was shown that an increase in the field excess above the threshold leads to consequential changes in domain shape from a three-ray star to a triangular and a circular shape. The appearance of comb-like domains as a result of linear scanning was demonstrated. All effects were considered in terms of a kinetic approach, taking into account the domain wall motion by step generation and kink motion driven by excess of the local field over the threshold. The obtained knowledge is useful for the all-optical methods of domain engineering in ferroelectrics.

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Hao, Xiaotian, and Hailong Wang. "Engineering Application of Nanomaterial and Ferroelectric Domain Polarization to the Dynamic Structure of the Surrounding Rock of Heavy-Duty Railway with Small Clear Intersection Tunnel." Advances in Materials Science and Engineering 2023 (February 7, 2023): 1–13. http://dx.doi.org/10.1155/2023/8354167.

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With the development of national railways and railways as one of the important channels for heavy-haul transportation, the construction of heavy-haul railways must be a rapid development, which makes it inevitable that the heavy-duty situation of small-distance interchange tunnels will appear. Nanomaterials refer to materials that have at least one dimension in the three-dimensional space in the nanoscale range (1 nm∼100 nm) or are composed of them as basic units. Ferroelectric domain polarization refers to the existence of electric domains in ferroelectrics, electric domains refer to small regions with the same spontaneous polarization direction, and the boundaries between electric domains and electric domains are called domain walls. It is also urgent to study the dynamic structure of the surrounding rocks of heavy-duty railways. This article aims to study the use of nanomaterial and ferroelectric domain technology to improve the overall strength, wear resistance, toughness, and other properties of steel to ensure the safety of the surrounding rock dynamic structure of the heavy-duty railway in the small clearance intersecting tunnel. Moreover, on this basis, this article proposes the method of spraying steel with nanomaterials and the use of ferroelectric domain polarization technology. The strength and wear resistance of steel can be improved under different nanomaterial content and the degree of ferroelectric domain polarization. Sustainability and toughness have been improved, respectively. After the wear resistance experiment and analysis, the experimental results of this article show that the impact resistance of the steel increased by 18.75%. When 0.012% of CeO2 is added, the impact toughness of the steel is increased to the maximum of 3.4 J, an increase of 16.31%, and a 37% increase in wear resistance. Under the premise of ensuring the demand for heavy-duty transportation, the safety performance and sustainability of transportation are greatly improved.

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Wang, Jian-Jun, Bo Wang, and Long-Qing Chen. "Understanding, Predicting, and Designing Ferroelectric Domain Structures and Switching Guided by the Phase-Field Method." Annual Review of Materials Research 49, no. 1 (2019): 127–52. http://dx.doi.org/10.1146/annurev-matsci-070218-121843.

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Understanding mesoscale ferroelectric domain structures and their switching behavior under external fields is critical to applications of ferroelectrics. The phase-field method has been established as a powerful tool for probing, predicting, and designing the formation of domain structures under different electromechanical boundary conditions and their switching behavior under electric and/or mechanical stimuli. Here we review the basic framework of the phase-field model of ferroelectrics and its applications to simulating domain formation in bulk crystals, thin films, superlattices, and nanostructured ferroelectrics and to understanding macroscopic and local domain switching under electrical and/or mechanical fields. We discuss the possibility of utilizing the structure-property relationship learned from phase-field simulations to design high-performance relaxor piezoelectrics and electrically tunable thermal conductivity. The review ends with a summary of and an outlook on the potential new applications of the phase-field method of ferroelectrics.

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Zhang, X., D. C. Joy, L. F. Allard, and T. A. Nolan. "Application of electron holography to ferroelectric study." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 1092–93. http://dx.doi.org/10.1017/s0424820100151295.

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With the development of FE TEM, electron holography becomes a reality to materials scientists, which opens a new window for materials study. Weak phase objects, such as a thin transparent specimen or an electric or a magnetic field, which have little or no effect on the intensity of the transmitted wave, can readily be observed via holography because of the phase shift that they produce. Application of the electron holographic method has been extended to the study of ferroelectric domain wall structures. This work presents the most recent results in this area.Polarization gradients within domain walls are extremely important for the understanding of the extrinsic elastio-dielectric properties of ferroelectrics. Electron holographic studies of the local domain wall profiles provide essential input parameters for phenomenological theories of domain structure and of the macroscopic properties derived from the theories. Figure 1(a) is an electron hologram of the ferroelectric (BaTiO3) 90° domain wall area.

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Osman, Rozana A. M., Mohd Sobri Idris, Zul Azhar Zahid Jamal, et al. "Ferroelectric and Relaxor Ferroelectric to Paralectric Transition Based on Lead Magnesium Niobate (PMN) Materials." Advanced Materials Research 795 (September 2013): 658–63. http://dx.doi.org/10.4028/www.scientific.net/amr.795.658.

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First ferroelectric materials were found in Rochelle salt was in a perovskite structure. Lead Magnesium Niobate (PMN) is a perovskites with a formula of PbMg1/3Nb2/3O3 (PMN) and are typical representatives for most of all ferroelectrics materials with relaxor characteristic. It posses high dielectric permittivity which nearly ~ 20,000[ with a broad dielectric permittivity characteristic, known as relaxor ferroelectric below room temperature. Some of the researcher might think that the transition from relaxor ferroelectric to paraelectric is similar to the characteristic as observed from ferroelectric to paraelectric, but it is not necessary. The puzzling is how do we categorise them. How is the domain structure look like typically in ceramic materials.

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Ursic, Hana, and Matej Sadl. "Investigation of piezoelectric 0.65Pb(Mg_1/3Nb_2/3)O₃–0.35PbTiO₃ films in cross section using piezo-response force microscopy." Applied Physics Letters 121, no. 19 (2022): 192905. http://dx.doi.org/10.1063/5.0104829.

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Interest in the piezoelectric and ferroelectric properties of micro- and nanomaterials is increasing due to the advances being made in nanotechnology. However, there are only a few techniques that can detect functional properties at the nanoscale, and one of them is piezo-response force microscopy (PFM). So far, this technique has been mainly used to study surface properties of piezoelectric films. In this investigation, we develop a procedure to study films in the cross section by PFM and to investigate the relaxor-ferroelectric domain structure of pristine, screen-printed, and aerosol-deposited 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 films in the cross section. Due to the different preparation methods used for two films, the grain size and, thus, the relaxor-ferroelectric domain structures differ. Micron-scale domains are observed in the screen-printed films, while sub micrometer-scale domains are found in the aerosol-deposited films. However, no change in the ferroelectric domain structures was observed across the thicknesses of the films.

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Yan, Yabin, Mingzhi Xiang, Xiaoyuan Wang, Tao Xu, and Fuzhen Xuan. "Ferroelectric domain wall in two-dimensional GeS." Journal of Applied Physics 132, no. 7 (2022): 074302. http://dx.doi.org/10.1063/5.0094689.

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Two-dimensional (2D) ferroelectrics have attracted extensive attention due to their rich variety of exquisite functionalities in novel nanoscale electronic devices. As domain walls (DWs) in ferroelectrics are topological defects separating domains with different orientations of the electric polarization, a detailed understanding of the energetic and atomistic characteristics of 2D ferroelectric DWs is a crucial issue due to its theoretical and technological importance. In the current study, using first-principles calculations, we provided a detailed investigation on the energy, variation of the atomic structure with applied strain, and the electronic properties of 180° and 90° DWs in 2D GeS including the uncharged and charged DWs. All types of DWs in 2D GeS were found to be atomically sharp. In addition, the 90° uncharged DW was more energetically favorable than the 180° DW, which is similar to DWs of perovskites. However, due to the effect of adverse electrostatic energy, the charged DW possessed higher energy than that of the uncharged DW. On the other hand, the polarization distortion of the domain region in all DWs is significantly strengthened by the biaxial strain. In addition, the density of states showed that the charged DW is conductive relative to the uncharged domain wall, because the uncompensated positive or negative charges exist at the charged domain wall. Our results provide necessary theoretical guidance to the future exploration and application of 2D ferroelectric materials.

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Borodina, V. V., and S. O. Kramarov. "Effect of mechanical stresses on the domain structure of barium titanate single crystals." Russian Technological Journal 8, no. 4 (2020): 66–78. http://dx.doi.org/10.32362/2500-316x-2020-8-4-66-78.

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This review article summarizes the material of years of research on the impact of mechanical stresses on the domain structure of multiaxhetoelectrics using the example of barium titanium monocrystals. Since the discovery of the ferroelectric properties of barium titanate in 1944, this material has been the subject of comprehensive investigation as the first practically important and perhaps the most famous ferroelectric. The domain structure of barium titanate is sensitive to mechanical stresses arising both from simple uniaxial compression and from point impacts by local mechanical loading. Mechanical stress applied to a ferroelectric crystal may have a significant effect on dielectric and piezoelectric properties. In particular, 90-degree domain switching is possible under the influence of stresses. The most interesting experimental results are obtained in the study of elastoplastic processes in BaTiO 3 originating from local mechanical stresses. The following features are found and studied: development of strained region around the point of application of the load; “internal” 90-degree domain that does not extend to the crystal surfaces and does not close upon other domains; the growth of 90-degree domains under the influence of residual mechanical stresses; growth of cracks along charged 90-degree domain walls. The notions of “ferroplastic effect” (crystal deformation due to the formation of 90-degree ferroelectric domains) and “ferromechanical effect” (crack formation and growth along charged 90-degree domain walls) are introduced. The hypothesis of a significant role of oxygen vacancies in the processes of 90-degree domain reorientation was put forward and experimentally confirmed. In particular, an increase in the concentration of oxygen vacancies by reducing annealing of barium titanate single crystals creates more favorable conditions for the appearance of an "internal" 90-degree domain under local mechanical load. The study of the mechanisms governing the formation of a domain structure in ferroelectric crystals remains an important problem of modern materials science.

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Sokolov, A. A., and S. D. Ivanov. "THIN FERROELECTRIC FILM DOMAIN STRUCTURE." Автометрия 58, no. 2 (2022): 54–60. http://dx.doi.org/10.15372/aut20220207.

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Zhong, W. L., Y. X. Wang, C. L. Wang, B. Jiang, and L. A. Bursill. "Domain structure in ferroelectric particles." Ferroelectrics 252, no. 1 (2001): 11–19. http://dx.doi.org/10.1080/00150190108016236.

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Ogawa, Toshio. "Domain structure of ferroelectric ceramics." Ceramics International 26, no. 4 (2000): 383–90. http://dx.doi.org/10.1016/s0272-8842(99)00100-5.

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Zhao, Xiaofang, and A. K. Soh. "Piezoelectric properties of rhombohedral ferroelectric materials with phase transition." Functional Materials Letters 08, no. 03 (2015): 1540008. http://dx.doi.org/10.1142/s1793604715400081.

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The temporal evolution of domain structure and its piezoelectric behavior of ferroelectric material BaTiO 3 during the transition process from rhombohedral to tetragonal phase under an applied electric field have been studied by employing Landau–Ginzburg theory and the phase-field method. The results obtained show that, during the transformation process, the intermediate phase was monoclinic MA phase, and several peak values of piezoelectric coefficient appeared at the stage where obvious change of domain pattern occurred. In addition, by comparing the cases of applied electric field with different frequencies, it was found that the maximum piezoelectric coefficient obtained decreased with increasing frequency value. These results are of great significance in tuning the properties of engineering domains in ferroelectrics, and could provide more fundamentals to the design of ferroelectric devices.

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Maslovskaya, Anna, Tatyana Barabash, and Elena Veselova. "Polarization Switching Response and Domain Structure Dynamics Induced in Ferroelectrics by Incident Electron Beams." Solid State Phenomena 247 (March 2016): 131–37. http://dx.doi.org/10.4028/www.scientific.net/ssp.247.131.

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The article is devoted to the analysis of polarization reversal process arising in ferroelectrics under electron beam exposure. The advanced model was proposed to describe the polarization switching process in ferroelectrics as well as formation of polarization switching response in electron beam-induced polarization current mode of SEM taking into account the specific character of domain structure dynamics. Simulation of polarization switching current in TGS ferroelectric crystals was performed to estimate the main characteristics of electron beam-induced polarization reversal processes.

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Grünebohm, Anna, Madhura Marathe, Ruben Khachaturyan, Raphael Schiedung, Doru C. Lupascu, and Vladimir V. Shvartsman. "Interplay of domain structure and phase transitions: theory, experiment and functionality." Journal of Physics: Condensed Matter 34, no. 7 (2021): 073002. http://dx.doi.org/10.1088/1361-648x/ac3607.

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Abstract Domain walls and phase boundaries are fundamental ingredients of ferroelectrics and strongly influence their functional properties. Although both interfaces have been studied for decades, often only a phenomenological macroscopic understanding has been established. The recent developments in experiments and theory allow to address the relevant time and length scales and revisit nucleation, phase propagation and the coupling of domains and phase transitions. This review attempts to specify regularities of domain formation and evolution at ferroelectric transitions and give an overview on unusual polar topological structures that appear as transient states and at the nanoscale. We survey the benefits, validity, and limitations of experimental tools as well as simulation methods to study phase and domain interfaces. We focus on the recent success of these tools in joint scale-bridging studies to solve long lasting puzzles in the field and give an outlook on recent trends in superlattices.

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Akhmatkhanov, Andrey, Constantine Plashinnov, Maxim Nebogatikov, Evgenii Milov, Ilya Shnaidshtein, and Vladimir Shur. "In Situ Imaging of Domain Structure Evolution in LaBGeO5 Single Crystals." Crystals 10, no. 7 (2020): 583. http://dx.doi.org/10.3390/cryst10070583.

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LaBGeO5 (LBGO) crystals are unique ferroelectric materials for manufacturing highly efficient UV laser sources based on frequency conversion. This is due to their low cut-off wavelength, high nonlinear-optical coefficients, and non-hygroscopicity. Periodical poling requires a deep study of domain kinetics in these crystals. Domain imaging by Cherenkov second harmonic generation microscopy was used to reveal the main processes of domain structure evolution: (1) growth and merging of isolated domains, (2) growth of stripe domains formed on the artificial linear surface defects, and (3) domain shrinkage. In a low field, growth of triangular domains and fast shape recovery after merging were observed, while in a high field, the circular domains grew independently after merging. The revealed essential wall motion anisotropy decreased with the field. The anisotropy led to significant shape transformations during domain shrinkage in low field. The formation of short-lived triangular domains rotated by 180 degrees with respect to the growing isolated domains was observed. The obtained results were explained within the kinetic approach to domain structure evolution based on the analogy between the growth of crystals and ferroelectric domains, taking into account the gradual transition from determined nucleation in low field to the stochastic one in high field.

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Normand, Laurent, Alain Thorel, and Yvan Montardi. "HREM study of ferroelectric domain wall in barium titanate." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 566–67. http://dx.doi.org/10.1017/s0424820100170566.

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This study focuses on High Resolution Transmission Electron Microscopy of barium titanate in its tetragonal ferroelectric phase, and especially on the structure of domain walls. This phase is stable between about 0 °C and 130 °C. During cooling, at 130 °C barium titanate changes from a cubic parraelectric phase to a tetragonal ferroelectric phase. In this phase the spontaneous polarisation is along one of the six [001] pseudo-cubic directions. Two types of domains can be formed during the phase transition :90° and 180° domains. In 90° domains the polarisation is at 90° from the polarisation of the next domain (exactly 2* ArcTan(a/c) if a and c are the lattice parameters). For these domains the domain walls are <110< type planes ; In 180° domains the polarisation is at 180° from the one in the next domain. 180° domain walls are <100< type plane and are assumed to be purely ferroelectric.

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Tang, Yuan-Yuan, Yongfa Xie, Yong Ai, et al. "Organic Ferroelectric Vortex–Antivortex Domain Structure." Journal of the American Chemical Society 142, no. 52 (2020): 21932–37. http://dx.doi.org/10.1021/jacs.0c11416.

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Al’ Rifai, S. A., B. M. Darinskii, A. P. Lazarev, and A. S. Sigov. "Domain structure in ferroelectric-ferromagnetic films." Physics of the Solid State 54, no. 5 (2012): 980–83. http://dx.doi.org/10.1134/s1063783412050034.

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Lucuta, Petru Grigorie. "Ferroelectric-Domain Structure in Piezoelectric Ceramics." Journal of the American Ceramic Society 72, no. 6 (1989): 933–37. http://dx.doi.org/10.1111/j.1151-2916.1989.tb06247.x.

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Fesenko, E. G., V. G. Gavrilyatchenko, and A. F. Semenchev. "Domain structure of multiaxial ferroelectric crystals." Ferroelectrics 100, no. 1 (1989): 195–207. http://dx.doi.org/10.1080/00150198908007915.

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Parinov, I. A. "Domain structure and ferroelectric ceramic fracture." Ferroelectrics 172, no. 1 (1995): 253–56. http://dx.doi.org/10.1080/00150199508018483.

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Wang, C. L. "Surface effect on ferroelectric domain structure." Solid State Communications 82, no. 9 (1992): 743–44. http://dx.doi.org/10.1016/0038-1098(92)90073-i.

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Huang, Jing, Pengfei Tan, Fang Wang, and Bo Li. "Ferroelectric Memory Based on Topological Domain Structures: A Phase Field Simulation." Crystals 12, no. 6 (2022): 786. http://dx.doi.org/10.3390/cryst12060786.

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The low storage density of ferroelectric thin film memory currently limits the further application of ferroelectric memory. Topologies based on controllable ferroelectric domain structures offer opportunities to develop microelectronic devices such as high-density memories. This study uses ferroelectric topology domains in a ferroelectric field-effect transistor (FeFET) structure for memory. The electrical behavior of FeFET and its flip properties under strain and electric fields are investigated using a phase-field model combined with the device equations of field-effect transistors. When the dimensionless electric field changes from −0.10 to 0.10, the memory window drops from 2.49 V to 0.6 V and the on-state current drops from 2.511 mA to 1.951 mA; the off-state current grows from 1.532 mA to 1.877 mA. External tensile stress increases the memory window and off-state current, while compressive stress decreases it. This study shows that a ferroelectric topology can be used as memory and could significantly increase the storage density of ferroelectric memory.

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Aoyagi, Kenta, Takanori Kiguchi, Yoshitaka Ehara, Hiroshi Funakubo, and Toyohiko J. Konno. "TEM Observation on Ferroelectric Domain Structures of PbTiO₃ Epitaxial Films." Key Engineering Materials 485 (July 2011): 179–82. http://dx.doi.org/10.4028/www.scientific.net/kem.485.179.

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The ferroelectric domain structure of PbTiO3(PTO) films was investigated by using transmission electron microscopy (TEM). In the film with PTO/SrTiO3(STO) structure, 180º domains are formed near the SrTiO3(STO) substrate and the domain length of 180º domains is 100 nm. However, 180º domains are not formed in the film with Pt/PTO/SrRuO3(SRO)/STO structure. These results show that 180º domains are formed in order to minimize depolarizing field energy, and that the domain length of 180º domains is determined by the competition among the depolarizing field energy, domain wall energy, Coulomb interaction and elastic interaction.

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Kraya, Laura Y., and Ramsey Kraya. "Polarization dependence of molecular adsorption on ferroelectrics." Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials 69, no. 2 (2013): 105–9. http://dx.doi.org/10.1107/s2052519213003308.

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The structural details of ferroelectric surfaces influence the effect of ferroelectric polarization on surface chemistry, and it is important to understand and control defect functionality as well as identify adsorption sites in ferroelectric materials. Ferroelectric domain polarization has been found to have a significant effect on surface properties and interactions. Here, both the structure and the presence of local electric fields are examined simultaneously. The surface structure and ferroelectric domain orientation are controlled while molecular adsorption effects are quantified. We use scanning tunneling microscopy (STM) to determine the surface and electronic effects of polarization–gas interactions on a model ferroelectric surface, BaTiO3(001).

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Kubasov, I. V., A. M. Kislyuk, A. V. Turutin, M. D. Malinkovich, and Yu N. Parkhomenko. "Bidomain ferroelectric crystals: properties and prospects of application." Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 23, no. 1 (2020): 5–56. http://dx.doi.org/10.17073/1609-3577-2020-1-5-56.

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Lithium niobate (LiNbO3) and lithium tantalate (LiTaO3) are among the most important and most widely used materials of coherent and nonlinear optics, as well as acoustics. High degree of uniformity and reproducibility has become the foundation of technology for manufacturing high-quality crystals, absorbed by many suppliers around the world. However, the above areas do not limit the use of LiNbO3 and LiTaO3 due to their unique piezoelectric and ferroelectric properties. One promising application of crystals is the design of electromechanical transducers for precision sensors and actuators. In this respect, the high thermal stability of the piezoelectric and mechanical properties, the lack of hysteresis and creep make it possible to create electromechanical converters with wide operating temperature range, that is beyond the capability of commonly used ferroelectric ceramics. The main advantage of LiNbO3 and LiTaO3 over other single-crystal piezoelectrics is ferroelectric domain structure regulation toward targeted impact on the device characteristics. One of the most striking examples of electromechanical transducer design through domain engineering is the formation of a so-called bidomain ferroelectric structure in crystal. It represents a single-crystalline plate with two macrodomains with opposite directions of spontaneous polarization vectors separated by a charged domain wall. High switching fields make inversion domains stable at temperatures up to 1000 °C. This review summarizes the main achievements in the formation of bidomain structure and near surface inversion domains in LiNbO3 and LiTaO3 crystals. We present the domain structure virtualization methods in crystals and non-destructive methods for controlling the domain boundary position. The report contains a comparative analysis of the methods for forming inversion domains in crystals, and the patterns and technological control methods of the domain structure are discussed. The basic physical models have been proposed in the literature to explain the effect of the inversion domains formation. In the present paper we outline what one sees as strengths and weaknesses of these models. The strategies of crystallographic cut selection to create devices based on bidomain crystals are briefly discussed. We provide examples of the implementation of devices based on bidomain crystals such as actuators, sensors, acoustic transducers, and waste energy collection systems.

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Yang, Jia, Zhipeng Gao, Yi Liu, et al. "Time dependence of domain structures in potassium sodium niobate-based piezoelectric ceramics." RSC Advances 11, no. 33 (2021): 20057–62. http://dx.doi.org/10.1039/d1ra03304b.

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The ferroelectric domain structure of Li-doped (K,Na)NbO<sub>3</sub> changed naturally as time passed, and most of the change occurred in the 180° domain wall, while the 60°/120° domains remained nearly unchanged.

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Huang, Yao Ting, Xiu Li Fu, Xiao Hong Zhao, and Wei Hua Tang. "A Review of the Influential Factors on the Ferroelectric Domain Structure in BiFeO₃ Thin Films." Key Engineering Materials 544 (March 2013): 219–25. http://dx.doi.org/10.4028/www.scientific.net/kem.544.219.

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BiFeO3 is a very promising multiferroic materials, which can present ferroelectric and antiferromagnetic properties at room temperature (Tn=643 K, Tc= 1103 K). Ferroelectric domains in BiFeO3 thin films have attracted much attention due to their potential applications in memory devices. The aim of this paper is to review the main factors which can influence the ferroelectric domain structure in BiFeO3 thin films, including substrate, doping and film thickness.

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Kuzenko, D. V. "Determination of the Activation Energy of Defects in Ferroelectrics by the Method of Temperature Activation–Relaxation of the Dielectric Permittivity." Поверхность. Рентгеновские, синхротронные и нейтронные исследования, no. 5 (September 22, 2024): 29–34. http://dx.doi.org/10.31857/s1028096024050055.

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The article proposes a method of temperature activation–relaxation of the permittivity for determining the activation energy of defects in ferroelectrics using lead zirconate–titanate Pb(Zr,Ti)O3 samples as an example. This method is based on the analysis of relaxation of the permittivity after thermal annealing and the analysis of the temperature activation of the permittivity of the Pb(Zr,Ti)O3 ferroelectric. The equality of the activation energy corresponding to the process of migration of oxygen vacancies and the thermal energy of the decay of the domain structure was established, which was confirmed by studying the surface of the samples by scanning electron microscopy. When this temperature was reached, the surface of the domain walls was detached from oxygen vacancies, which are pinning centers. This manifested itself in photographs of the microstructure as a change in the ordering of the domains emerging on the surface of the sample, which led to an irreversible decrease in the permittivity of the sample. For the obtained activation energies, the physical process of domain wall motion activation is established, which is determined by their pinning on structural defects (oxygen vacancies). It is assumed that the irreversible decay of the domain structure occurs when the domain walls are displaced by distances exceeding the elementary lattice parameter of the ferroelectric. The proposed method can be part of a comprehensive study that includes electrophysical, microscopic and X-ray methods.

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Rafiq, M. A., M. E. Costa, I. M. Reaney, and P. M. Vilarinho. "Transmission Electron Microscopy of Mn-doped KNN Ceramics." Microscopy and Microanalysis 19, S4 (2013): 99–100. http://dx.doi.org/10.1017/s1431927613001116.

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Smart materials like piezoelectrics and ferroelectrics play a crucial role in applications such assensors and actuators,radio-frequency switching, drug delivery, chemicals detection, and power generation and storage. K0.5Na0.5NbO3 (KNN) is one of the leading lead free piezoelectric materials being considered as an alternativeto Pb(Zrx,Ti1-x)O3 (PZT), which is currently the most widely used material for electromechanical applications. Although pure KNN has inferior electromechanical properties compared to PZT,efforts are on going to tailor and improve its piezoelectric coefficients by doping and texturing.Although the piezoelectric constant (d33) of undoped KNN is unsuitable for practical electromechanical applications, properties comparable to PZT at room temperature (d33>400 pC/N) have been reported for modified KNN ceramics. Electromechanical properties are however, very much dependent on the crystalline phase content, crystallographic orientation, microstructure, interfaces and domain configuration.Mn is an indispensable dopant for both PbO-based as well as PbO-free ceramics like BaTiO3, SrTiO3, KNbO3 and KTaO3. It has been reported to improve the density, mechanical quality factor, electromechanical properties and to reduce dielectric loss. Mn has been successfully used to reduce the leakage current and lower the orthorhombic to tetragonal phase transition temperature (TO-T) in KNN single crystals. It has also been shown to improve the density and properties of KNN–LiTaO3–LiSbO3. However, the effect of Mn on the KNN domain structure and phase assemblage has not yet been reported. In this work, KNN ceramics doped with Mn on the B-site (Mn content was 0.5, 1.0. 1.5 and 2 mole%) were synthesized by a conventional mixed oxide method. Transmission electron microscopy (TEM)(Hitachi 9000) studies were carried out to analyse the effect of B-site Mn doping on the ferroelectric domain structure and phase assemblage.Undoped KNN ceramics had large grains (>30 >m) which contained large (>1 >m wide) wedge shaped ferroelectric domains. KNN doped with 0.5 mole % Mn exhibited a smaller grain size (~2 mm) in which a well defined domain structure was observed with widths approximately an order of magnitude smaller than those in undoped KNN. For KNN doped with 2 mole % Mn, the presence of a second phase, Figure 1c, was often observed. Electron diffraction patterns from the second phase were consistent with a tetragonal tungsten bronze (TTB) structured compound although more work is required to definitively determine the phase assemblage. The domain structure became increasing complex as Mn concentration increased, suggesting that the presence of Mn on the B-site disrupts polar order.In conclusion, TEM analysis demonstrated that Mn doping changes the domain structure of KNN ceramics: for low Mn content, well defined ferroelectric domains and for high Mn content, tangled domains and second phase were the main features.These microstructure details elucidate reasons that may account for the inferior piezoelectric properties of KNN at higher Mn concentration.

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Zelenovskiy, Pavel, Evgeny Greshnyakov, Dmitry Chezganov, et al. "Micro-Raman Imaging of Ferroelectric Domain Structures in the Bulk of PMN-PT Single Crystals." Crystals 9, no. 2 (2019): 65. http://dx.doi.org/10.3390/cryst9020065.

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We demonstrate the application of confocal Raman microscopy (CRM) for nondestructive imaging of ferroelectric domains both at the surface and in the bulk of lead magnesium niobate-lead titanate (PMN-PT) ferroelectric single crystals. The studied model periodical domain structure was created at a [001] cut of tetragonal-phase PMN-PT crystal by the electron beam patterning technique. It was shown that the surface CRM domain image coincides in details with the image obtained by piezoresponse force microscopy.

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Zhang, Kena, Yao Ren, and Ye Cao. "Mechanically tunable elastic modulus of freestanding Ba₁₋_xSr_xTiO₃ membranes via phase-field simulation." Applied Physics Letters 121, no. 15 (2022): 152902. http://dx.doi.org/10.1063/5.0099772.

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The freestanding ferroelectric membranes with super-elasticity show promising applications in flexible electronic devices such as transducers, memories, etc. While there have been recent studies on the effect of mechanical bending on the domain structure evolutions and phase transitions in ferroelectric membranes, its influence on Young's modulus of these freestanding membranes is less explored, which is crucial for the design and application of flexible electronics. Here, a phase-field model is developed to simulate the tunability of Young's modulus of freestanding Ba1− xSr xTiO3 membranes under mechanical bending. It is demonstrated that the bended membrane shows a uniform Young's modulus compared with unbended membrane. By increasing the bending angle, Young's modulus tunability is enhanced, which can be attributed to the vortex-like domain structures induced by the mechanical bending. These vortex-like domains with large domain wall energy inhibit the subsequent domain switching under externally applied tensile strain and reduce the eigenstrain variation, which leads to a large Young's modulus. In addition, the formation of vortex domain structure is suppressed with increasing Sr2+ content in Ba1− xSr xTiO3 membranes at the same bending degree, resulting in a decrease in Young's modulus tunability. Our work reveals that the tunability of Young's modulus of freestanding ferroelectric membranes can be achieved by mechanical bending, which provides guidance for designing flexible electronic devices.

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Vasileva, Daria, Semen Vasilev, Andrei L. Kholkin та Vladimir Ya Shur. "Domain Diversity and Polarization Switching in Amino Acid β-Glycine". Materials 12, № 8 (2019): 1223. http://dx.doi.org/10.3390/ma12081223.

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Piezoelectric materials based on lead zirconate titanate are widely used in sensors and actuators. However, their application is limited because of high processing temperature, brittleness, lack of conformal deposition and, more importantly, intrinsic incompatibility with biological environments. Recent studies on bioorganic piezoelectrics have demonstrated their potential in these applications, essentially due to using the same building blocks as those used by nature. In this work, we used piezoresponse force microscopy (PFM) to study the domain structures and polarization reversal in the smallest amino acid glycine, which recently attracted a lot of attention due to its strong shear piezoelectric activity. In this uniaxial ferroelectric, a diverse domain structure that includes both 180° and charged domain walls was observed, as well as domain wall kinks related to peculiar growth and crystallographic structure of this material. Local polarization switching was studied by applying a bias voltage to the PFM tip, and the possibility to control the resulting domain structure was demonstrated. This study has shown that the as-grown domain structure and changes in the electric field in glycine are qualitatively similar to those found in the uniaxial inorganic ferroelectrics.

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Denneulin, T., and A. S. Everhardt. "A transmission electron microscopy study of low-strain epitaxial BaTiO₃ grown onto NdScO₃." Journal of Physics: Condensed Matter 34, no. 23 (2022): 235701. http://dx.doi.org/10.1088/1361-648x/ac5db3.

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Abstract Ferroelectric materials exhibit a strong coupling between strain and electrical polarization. In epitaxial thin films, the strain induced by the substrate can be used to tune the domain structure. Substrates of rare-earth scandates are sometimes selected for the growth of ferroelectric oxides because of their close lattice match, which allows the growth of low-strain dislocation-free layers. Transmission electron microscopy (TEM) is a frequently used technique for investigating ferroelectric domains at the nanometer-scale. However, it requires to thin the specimen down to electron transparency, which can modify the strain and the electrostatic boundary conditions. Here, we have investigated a 320 nm thick epitaxial layer of BaTiO3 grown onto an orthorhombic substrate of NdScO3 with interfacial lattice strains of −0.45% and −0.05% along the two in-plane directions. We show that the domain structure of the layer can be significantly altered by TEM sample preparation depending on the orientation and the geometry of the lamella. In the as-grown state, the sample shows an anisotropic a/c ferroelastic domain pattern in the direction of largest strain. If a TEM lamella is cut perpendicular to this direction so that strain is released, a new domain pattern is obtained, which consists of bundles of thin horizontal stripes parallel to the interfaces. These stripe domains correspond to a sheared crystalline structure (orthorhombic or monoclinic) with inclined polarization vectors and with at least four variants of polarization. The stripe domains are distributed in triangular-shaped 180° domains where the average polarization is parallel to the growth direction. The influence of external electric fields on this domain structure was investigated using in situ biasing and dark-field imaging in TEM.

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Xiao, Chang Jiang, Zheng Xin Li, and Xiang Rong Deng. "Simultaneous Observation of Nanocrystalline BaTiO₃ Ceramics Surface Morphology and Ferroelectricity Using Scanning Nonlinear Dielectric Microscopy." Advanced Materials Research 146-147 (October 2010): 1252–55. http://dx.doi.org/10.4028/www.scientific.net/amr.146-147.1252.

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A scanning nonlinear dielectric microscopy (SNDM) with an additional electrically conducting atomic force microscope cantilever as a probe needle is adopted to simultaneously observe the surface topographic and domain images of nanocrystalline BaTiO3 ceramics with super-high resolution. The sample exhibits a uniform grain size distribution and the average grain sizes are calculated to be about 30 nm. Some regions are brighter than the others in SNDM image, indicating the existence of ferroelectric domains structure. In addition, P-E hysteresis and piezoresponse loops are found in nanocrystalline BaTiO3 ceramics. The experimental results demonstrate that the SNDM with the function of atomic force microscopy is very useful for understanding domain structures of nanocrystalline ferroelectric materials.

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Kislyuk, Alexander M., Tatiana S. Ilina, Ilya V. Kubasov, et al. "Tailoring of stable induced domains near a charged domain wall in lithium niobate by probe microscopy." Modern Electronic Materials 5, no. 2 (2019): 51–60. http://dx.doi.org/10.3897/j.moem.5.2.51314.

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Ferroelectric lithium niobate (LiNbO3) crystals with an engineered domain structure have a number of applications in optical systems for generation of multiple laser radiation harmonics, acoustooptics, precision actuators, vibration and magnetic field sensors, including those for high-temperature applications, and prospectively, in non-volatile computer memory. We have studied the effect of charged domain boundary on the formation of induced domain structures in congruent lithium niobate (LiNbO3) crystals at the non-polar x-cut. Bi- and polydomain ferroelectric structures containing charged “head-to-head” and “tail-to-tail” type domain boundaries have been formed in the specimens using diffusion annealing in air ambient close to the Curie temperature and infrared annealing in an oxygen free environment. The surface potential near the charged domain wall has been studied using an atomic force microscope (AFM) in Kelvin mode. We have studied surface wedge-shaped induced microscopic domains formed at the charged domain boundary and far from that boundary by applying electric potential to the AFM cantilever which was in contact with the crystal surface. We have demonstrated that the morphology of the induced domain structure depends on the electrical conductivity of the crystals. The charged “head-to-head” domain boundary has a screening effect on the shape and size of the domain induced at the domain wall. Single wedge-shaped domains forming during local repolarization of reduced lithium niobate crystals at the AFM cantilever split into families of microscopic domains in the form of codirectional beams emerging from a common formation site. The charged domain wall affects the topography of the specimens by inducing the formation of an elongated trench, coincident with the charged boundary, during reduction annealing.

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Alikin, Denis, Anton Turygin, Andrei Ushakov, et al. "Competition between Ferroelectric and Ferroelastic Domain Wall Dynamics during Local Switching in Rhombohedral PMN-PT Single Crystals." Nanomaterials 12, no. 21 (2022): 3912. http://dx.doi.org/10.3390/nano12213912.

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The possibility to control the charge, type, and density of domain walls allows properties of ferroelectric materials to be selectively enhanced or reduced. In ferroelectric–ferroelastic materials, two types of domain walls are possible: pure ferroelectric and ferroelastic–ferroelectric. In this paper, we demonstrated a strategy to control the selective ferroelectric or ferroelastic domain wall formation in the (111) single-domain rhombohedral PMN-PT single crystals at the nanoscale by varying the relative humidity level in a scanning probe microscopy chamber. The solution of the corresponding coupled electro-mechanical boundary problem allows explaining observed competition between ferroelastic and ferroelectric domain growth. The reduction in the ferroelastic domain density during local switching at elevated humidity has been attributed to changes in the electric field spatial distribution and screening effectiveness. The established mechanism is important because it reveals a kinetic nature of the final domain patterns in multiaxial materials and thus provides a general pathway to create desirable domain structure in ferroelectric materials for applications in piezoelectric and optical devices.

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Sokolov, A. A., and S. D. Ivanov. "The Domain Structure of Thin Ferroelectric Films." Optoelectronics, Instrumentation and Data Processing 58, no. 2 (2022): 154–59. http://dx.doi.org/10.3103/s875669902202008x.

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NAMBU, Shinji. "Domain Structure and Hysteresis of Ferroelectric Perovskites." Hyomen Kagaku 17, no. 11 (1996): 654–59. http://dx.doi.org/10.1380/jsssj.17.654.

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NECHAEV, V. N., and A. V. SHUBA. "Domain Structure of Thin Ferroelectric—Ferroelastic Films." Ferroelectrics 307, no. 1 (2004): 53–58. http://dx.doi.org/10.1080/00150190490492178.

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Nakatani, N. "Observation of Ferroelectric Domain Structure in TGS." Ferroelectrics 413, no. 1 (2011): 238–65. http://dx.doi.org/10.1080/00150193.2011.554269.

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Zeng, Huizhong, Shengbo Lu, Linshan Dai, Jingsong Liu, Zhihong Wang, and Changming Zuo. "Ferroelectric domain structure of discrete PbTiO3 nanograins." Materials Letters 59, no. 22 (2005): 2808–11. http://dx.doi.org/10.1016/j.matlet.2005.03.060.

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Ćwikiel, K., B. Fugiel, and M. Mierzwa. "The rigid domain structure in TGS ferroelectric." Physica B: Condensed Matter 293, no. 1-2 (2000): 58–66. http://dx.doi.org/10.1016/s0921-4526(00)00532-9.

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Journal articles on the topic 'Ferroelectric domain structure'

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