Relevant bibliographies by topics / Ferroelectric Materials

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Ferroelectric Materials'

Author: Grafiati
Published: 4 June 2021
Last updated: 29 March 2025

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Journal articles on the topic "Ferroelectric Materials"

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Wang, Yumeng. "Two-Dimensional Ferroelectric Materials: Synthesis, Characterization and Applications." Highlights in Science, Engineering and Technology 112 (August 20, 2024): 128–36. http://dx.doi.org/10.54097/rzvdx423.

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In recent years, the continuous advancements in microelectronics have driven the evolution of electronic devices towards miniaturization and integration. However, at the nanoscale level, surface and size effects become significant, imposing constraints on the use of conventional bulk ferroelectric materials in contemporary industry. As a result, in the field of materials research, two-dimensional (2D) ferroelectric materials with stable spontaneous polarization and minimal size effects have gained significant attention. These novel 2D ferroelectric materials have great potential for future nano-level ferroelectric applications, enabling high levels of device integration. To begin with, this paper divides 2D ferroelectric materials into two categories: intrinsic ferroelectrics and sliding ferroelectrics. It also discusses the features and current state of research on each of these categories. Next, typical 2D ferroelectric material preparation and characterization techniques are outlined. Additionally, 2D ferroelectric memory devices like ferroelectric diodes (FD), ferroelectric field effect transistors (FeFET), ferroelectric semiconductor field-effect transistors (FeSFET), and ferroelectric tunnel junctions (FTJ) are introduced. Finally, this review also presents expectations and potential challenges in the domain of 2D ferroelectric materials.
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Zhang, Xinhao, and Bo Peng. "The twisted two-dimensional ferroelectrics." Journal of Semiconductors 44, no. 1 (January 1, 2023): 011002. http://dx.doi.org/10.1088/1674-4926/44/1/011002.

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Abstract Since the beginning of research on two-dimensional (2D) materials, a few numbers of 2D ferroelectric materials have been predicted or experimentally confirmed, but 2D ferroelectrics as necessary functional materials are greatly important in developing future electronic devices. Recent breakthroughs in 2D ferroelectric materials are impressive, and the physical and structural properties of twisted 2D ferroelectrics, a new type of ferroelectric structure by rotating alternating monolayers to form an angle with each other, have attracted widespread interest and discussion. Here, we review the latest research on twisted 2D ferroelectrics, including Bernal-stacked bilayer graphene/BN, bilayer boron nitride, and transition metal dichalcogenides. Finally, we prospect the development of twisted 2D ferroelectrics and discuss the challenges and future of 2D ferroelectric materials.
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Jiang, Shujuan, Yongwei Wang, and Guangping Zheng. "Two-Dimensional Ferroelectric Materials: From Prediction to Applications." Nanomaterials 15, no. 2 (January 12, 2025): 109. https://doi.org/10.3390/nano15020109.

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Ferroelectric materials hold immense potential for diverse applications in sensors, actuators, memory storage, and microelectronics. The discovery of two-dimensional (2D) ferroelectrics, particularly ultrathin compounds with stable crystal structure and room-temperature ferroelectricity, has led to significant advancements in the field. However, challenges such as depolarization effects, low Curie temperature, and high energy barriers for polarization reversal remain in the development of 2D ferroelectrics with high performance. In this review, recent progress in the discovery and design of 2D ferroelectric materials is discussed, focusing on their properties, underlying mechanisms, and applications. Based on the work discussed in this review, we look ahead to theoretical prediction for 2D ferroelectric materials and their potential applications, such as the application in nonlinear optics. The progress in theoretical and experimental research could lead to the discovery and design of next-generation nanoelectronic and optoelectronic devices, facilitating the applications of 2D ferroelectric materials in emerging advanced technologies.
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Yu, Limin, Lijing Wang, Yanmeng Dou, Yongya Zhang, Pan Li, Jieqiong Li, and Wei Wei. "Recent Advances in Ferroelectric Materials-Based Photoelectrochemical Reaction." Nanomaterials 12, no. 17 (August 31, 2022): 3026. http://dx.doi.org/10.3390/nano12173026.

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Inorganic perovskite ferroelectric-based nanomaterials as sustainable new energy materials, due to their intrinsic ferroelectricity and environmental compatibility, are intended to play a crucial role in photoelectrochemical field as major functional materials. Because of versatile physical properties and excellent optoelectronic properties, ferroelectric-based nanomaterials attract much attention in the field of photocatalysis, photoelectrochemical water splitting and photovoltaic. The aim of this review is to cover the recent advances by stating the different kinds of ferroelectrics separately in the photoelectrochemical field as well as discussing how ferroelectric polarization will impact functioning of photo-induced carrier separation and transportation in the interface of the compounded semiconductors. In addition, the future prospects of ferroelectric-based nanomaterials are also discussed.
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Liu, Arthur Haozhe, Lisa Luhong Wang, and Lingping Kong. "Relaxor ferroelectrics materials under high pressure." Acta Crystallographica Section A Foundations and Advances 70, a1 (August 5, 2014): C979. http://dx.doi.org/10.1107/s2053273314090202.

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The rich phase diagrams from both relaxor and normal ferroelectrics under high pressure, stimulate us to study the pressure effect on the relaxor-PbTiO3 (PT) systems, to check whether the high pressure cubic structure will turn to low symmetry structure upon strong compression is the common behaviors for relaxor ferroelectrics materials. Furthermore, a complete phase diagram study of pressure-temperature effect on structure will allow us to explore the limitation on applications of relaxor-PT material devices under harsh environment involving in high pressure and high temperature conditions. Structure evolution and phase transition of several solid solution ferroelectrics, such as Pb(YbNb)O3-PT (PYN-PT), have been studied using in situ synchrotron X-ray diffraction (XRD) and Raman spectroscopy techniques under high pressure and high temperature conditions. XRD results show pressure induced phase transitions to a cubic phase, while the persistence of Raman spectroscopy in the full pressure range indicates its local distortion. A pressure-temperature phase diagram is further constructed to determine the stability region of the ferroelectric phase. The results provide useful guidance for the applications of this kind of high Curie temperature ferroelectric crystal under extreme conditions, and extra clue to synthesis of ferroelectric materials with tailored properties.
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PARK, Min Hyuk. "Renaissance of Ferroelectric Memories: Can They Be a Game-changer?" Physics and High Technology 30, no. 9 (September 30, 2021): 16–23. http://dx.doi.org/10.3938/phit.30.028.

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Ferroelectric memories have been studied for ∼60 years since their first suggestion in 1952. The material properties of ferroelectrics are considered ideal for universal memories with the availability of electrical program/erase and read processes. However, challenges in the physical scaling down of bulk ferroelectric materials were a critical hurdle for the success of ferroelectric materials. In 2011, ferroelectricity in HfO2-based thin film was first reported, and this unexpected discovery revived research on ferroelectric memories. In this review, the properties, history, and applications of HfO2-based ferroelectrics are reviewed, and a perspective on semiconductor devices based on them is provided.
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Chen, Li, Mei Er Pam, Sifan Li, and Kah-Wee Ang. "Ferroelectric memory based on two-dimensional materials for neuromorphic computing." Neuromorphic Computing and Engineering 2, no. 2 (March 25, 2022): 022001. http://dx.doi.org/10.1088/2634-4386/ac57cb.

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Abstract Ferroelectric memory devices with fast-switching speed and ultra-low power consumption have been recognized as promising building blocks for brain-like neuromorphic computing. In particular, ferroelectric memories based on 2D materials are attracting increasing research interest in recent years due to their unique properties that are unattainable in conventional materials. Specifically, the atomically thin 2D materials with tunable electronic properties coupled with the high compatibility with existing complementary metal-oxide-semiconductor technology manifests their potential for extending state-of-the-art ferroelectric memory technology into atomic-thin scale. Besides, the discovery of 2D materials with ferroelectricity shows the potential to realize functional devices with novel structures. This review will highlight the recent progress in ferroelectric memory devices based on 2D materials for neuromorphic computing. The merits of such devices and the range of 2D ferroelectrics being explored to date are reviewed and discussed, which include two- and three-terminal ferroelectric synaptic devices based on 2D materials platform. Finally, current developments and remaining challenges in achieving high-performance 2D ferroelectric synapses are discussed.
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Herber, Ralf-Peter, and Gerold A. Schneider. "Surface displacements and surface charges on Ba2CuWO6 and Ba2Cu0.5Zn0.5WO6 ceramics induced by local electric fields investigated with scanning-probe microscopy." Journal of Materials Research 22, no. 1 (January 2007): 193–200. http://dx.doi.org/10.1557/jmr.2007.0030.

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Ba2CuWO6 (BCW) was first synthesized in the mid 1960s, and it was predicted to be a ferroelectric material with a very high Curie temperature of 1200 °C [N. Venevtsev and A.G. Kapyshev: New ferroelectrics. Proc. Int. Meet. Ferroelectr.1, 261 (1966)]. Since then, crystallographic studies were performed on the compound with the result that its crystal structure is centrosymmetric. Thus for principal reason, BCW cannot be ferroelectric. That obvious contradiction was examined in this study. Disk-shaped ceramic samples of BCW and Ba2Cu0.5Zn0.5WO6 (BCZW) were prepared. Because of the low electrical resistivity of the ceramics, it was not possible to perform a typical polariszation hysteresis loop for characterization of ferroelectric properties. Scanning electron microscopy investigations strongly suggest that the reason for the conductivity is found in the impurities/precipitations within the microstructure of the samples. With atomic force microscopy (AFM) in piezoresponse force microscopy (PFM) mode, it is possible to characterize local piezoelectricity by imaging the ferroelectric domains. Neither BCW nor BCZW showed any domain structure. Nevertheless, when local electric fields were applied to the surfaces of the ceramics topographic displacements, imaged with AFM, and surface charges, imaged with Kelvin probe force microscopy (KFM) and PFM, were measured and remained stable on the surface for the time of the experiment. Therefore BCW and BCZW are considered to be electrets and possibly relaxor ferroelectrics.
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Zhang, Zhen, Zhaokuan Wen, Ting Li, Zhiguo Wang, Zhiyong Liu, Xiaxia Liao, Shanming Ke, and Longlong Shu. "Flexoelectric aging effect in ferroelectric materials." Journal of Applied Physics 133, no. 5 (February 7, 2023): 054102. http://dx.doi.org/10.1063/5.0134531.

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In spite of the flexoelectric effect being a universal phenomenon in the ferroelectric perovskites, the current understanding of flexoelectric aging in ferroelectrics is, actually, rather incomplete. In this paper, we have fabricated a series of Mn-doped BaTiO3 perovskite ceramics (BaTi1–xMnxO3, x = 0.1% and 1%, BTMO) to systematically investigate the corresponding flexoelectric aging behavior by controlling the concentration of Mn. We found that the variation of Mn dopant significantly effects the Curie temperature, dielectric constant, flexoelectric aging, and flexoelectric coefficient of the BTMO ceramics. Especially for the BTMO (0.1%) ceramics, obvious ferroelectric aging and flexoelectric aging phenomenon are observed at room temperature. The main reason for aging of BTMO ceramics is that the doping of Mn introduces oxygen vacancies, which tend to be stable under the action of strain gradient and electric field. Therefore, the results presented in this paper verify that the flexoelectric aging in Mn-doped BTO ceramics is closely related to ferroelectric fatigue.
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Osman, Rozana A. M., Mohd Sobri Idris, Zul Azhar Zahid Jamal, Sanna Taking, Syarifah Norfaezah Sabki, Prabakaran A. L. Poopalan, Mohd Natashah Norizan, and Ili Salwani Mohamad. "Ferroelectric and Relaxor Ferroelectric to Paralectric Transition Based on Lead Magnesium Niobate (PMN) Materials." Advanced Materials Research 795 (September 2013): 658–63. http://dx.doi.org/10.4028/www.scientific.net/amr.795.658.

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First ferroelectric materials were found in Rochelle salt was in a perovskite structure. Lead Magnesium Niobate (PMN) is a perovskites with a formula of PbMg1/3Nb2/3O3 (PMN) and are typical representatives for most of all ferroelectrics materials with relaxor characteristic. It posses high dielectric permittivity which nearly ~ 20,000[ with a broad dielectric permittivity characteristic, known as relaxor ferroelectric below room temperature. Some of the researcher might think that the transition from relaxor ferroelectric to paraelectric is similar to the characteristic as observed from ferroelectric to paraelectric, but it is not necessary. The puzzling is how do we categorise them. How is the domain structure look like typically in ceramic materials.
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Dissertations / Theses on the topic "Ferroelectric Materials"

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Oates, William Sumner. "Fracture of Ferroelectric Materials." Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/4769.

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Ferroelectric materials continue to find increasing use in actuator, sensor and transducer design. Questions regarding lifetime and reliability remain a concern due to the inherent low fracture toughness and complex material behavior. The poling procedure required for use in actuator and sensing devices introduces anisotropy in elastic and dielectric coefficients as well as piezoelectric coupling between the mechanical and electrical fields. This introduces complex fracture behavior which necessitates advanced analytical techniques and fracture characterization. In this dissertation, fracture mechanics of ferroelectric materials is evaluated by employing different analytical techniques and experimental methodology. The theoretical work has focused on linear piezoelectric coupling that accounts for the influence of anisotropy and heterogeneity on fracture. A new orthotropic rescaling technique is presented that explicitly solves the anisotropic linear elastic piezoelectric crack problem in terms of material coefficients. The effects of heterogeneities on electric field induced microfracture are analyzed by implementing a crack at the edge of a heterogeneous piezoelectric inclusion. A positive, flaw-localized driving force is realized when permeable crack face boundary conditions are considered. The experimental portion of the work evaluates fracture behavior in the ferroelectric ceramic, lead zirconate titanate (PZT), and the ferroelectric relaxor single crystal PZN-4.5%PT. Relative humidity and electric boundary conditions are shown to have significant effects on crack kinetics in PZT. Fracture anisotropy in single crystal PZN-4.5%PT is characterized using the Single-Edge V-notch Beam (SEVNB) method and Vickers indentations. Scanning electron micrographs are used to determine the crack profile which leads to a prediction of crack tip toughness and local energy release rate. A weak cleavage plane is identified in the single crystal relaxor which contains a significantly lower toughness in comparison to the ferroelectric ceramic PZT.
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Rivollet, Benoit. "Constitutive models for ferroelectric materials." Thesis, Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/16463.

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Buchacher, Till. "Polarisation dynamics in ferroelectric materials." Thesis, University of Surrey, 2017. http://epubs.surrey.ac.uk/841383/.

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Ferroelectric materials have established themselves as indispensable in key applications such as piezoelectric transducers and energy storage devices. While the use of ferroelectrics in these fields dates back more than 50 years, little progress has been made to extend applications of ferroelectrics into new fields. To a large extend the observed slow progress is not caused by a lack of potential applications, but to by the inherent complexity associated with a structural phase transition, combined with strong coupling of polarisation, strain and temperature, and the strong modification of the phenomena by material defects. This thesis takes a look at prospective applications in energy storage for pulse power applications, solid state cooling and non-volatile random access memory and identifies key issues that need to be resolved. The thesis delivers time-domain based approaches to determine ferroelectric switching behaviour of bulk materials and thin films down to sub-ns time scales. The approach permitted study of how information written to a ferroelectric memory decays as a result of multiple non-destructive read operations. Furthermore simultaneous direct measurements of temperature and ferroelectric switching established a direct link between the retarded switching phenomenon observed in ferroelectrics and temperature changes brought by the electrocaloric effect. By comparison with analytical models and numerical simulation a large localised temperature change on the scale of individual domains is postulated. It implies a much larger coupling between switching and local temperature than has been previously considered. In extension of the model the frequency dependence of polarisation fatigue under bipolar conditions is explained by the occurrence of large temperature gradients in the material.
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Song, Yicheng. "The behavior and properties of ferroelectric single crystals and ferroelectric nano-composites." Click to view the E-thesis via HKUTO, 2007. http://sunzi.lib.hku.hk/HKUTO/record/B3955806X.

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Song, Yicheng, and 宋亦誠. "The behavior and properties of ferroelectric single crystals and ferroelectric nano-composites." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2007. http://hub.hku.hk/bib/B3955806X.

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Nonnenmann, Stephen Sommers Spanier Jonathan. "Integrated non-planar ferroelectric nanostructures /." Philadelphia, Pa. : Drexel University, 2010. http://hdl.handle.net/1860/3260.

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Wang, Jie. "Phase field simulations of ferroelectric materials /." View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?MECH%202006%20WANGJ.

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Gough, Neil. "Smectic C materials for ferroelectric applications." Thesis, University of Hull, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.419091.

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Hilton, Andrew David. "TEM studies of relaxor ferroelectric materials." Thesis, University of Essex, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.328755.

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Yang, Mingmin. "Photoelectric processes in ferroelectric/multiferroic materials." Thesis, University of Warwick, 2018. http://wrap.warwick.ac.uk/105580/.

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Photoferroelectrics, which is defined as the interaction of ferroelectric materials with light, has attracted renewed attention recently and emerged as a topic of both fundamental interest and technological importance. It not only provides potential applications in sensors and photovoltaic devices but also offers a fertile playground to gain insight into the physics of ferroelectricity. As a prominent example, the bulk photovoltaic effect manifested in the ferroelectric materials under illumination gives rise to an anomalous open-circuit photovoltage exceeding the bandgap as well as a light polarisation-dependent photocurrent, offering an alternative approach to boost the solar energy conversion efficiency. Although it has been established for decades, the field is still in its fancy and many fundamental issues remain to be resolved to fully exploit its potential. In the first part of this thesis, we focus on the photoelectric processes in the bulk photovoltaic effect of bismuth ferrite to unravel respectively the essential role of the sub-bandgap levels, its correlation with ferroelectric polarization and role of domain walls in conduction of photovoltaic current. Results demonstrate the sub-bandgap levels is at the electronic origin of the bulk photovoltaic effect in bismuth ferrite. The activity of the sub-bandgap levels in the photoelectric processes can be effectively utilized to tailor the ferroelectric photovoltaic performance. Also, contrary to the common intuition, we prove the independence of the bulk photovoltaic effect on the ferroelectric polarization. We also found that the ferroelectric domain walls can facilitate the conduction and collection of the photocurrent originated in the bulk photovoltaic effect despite its adverse effect on the photovoltage. Inspired by the abundant phenomena in the photoferroelectric field, we explored the light-induced reversible manipulation of the ferroelectric polarization in a deterministic way. This interesting issue is successfully addressed in this thesis by utilizing a combination of the bulk photovoltaic effect and a nanoscale electrode. The collection of photocurrent by an atomic force microscope tip generates a giant electric field locally, enabling ferroelectric switching. By tuning the direction of the photocurrent via either illumination areas or light polarization, the ferroelectric polarization can be reversibly controlled. At the last part of the thesis, we creatively generalised the bulk photovoltaic effect, which was originally constrained to the non-centrosymmetric materials, to a universal effect allowed in all the semiconductors irrespective of their symmetry by the mediation of the flexoelectric effect. This new photovoltaic effect, termed as flexo-photovoltaic effect, may offer a new mechanism to enhance solar cell efficiency. The research works studied in this thesis not only provide fundamental insights into the interactions of ferroelectrics with light but also largely expand the scope of photoferroelectrics into centrosymmetric materials.
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Books on the topic "Ferroelectric Materials"

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Pardo, Lorena, and Jesús Ricote. Multifunctional Polycrystalline Ferroelectric Materials. Dordrecht: Springer Netherlands, 2011. http://dx.doi.org/10.1007/978-90-481-2875-4.

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Huang, Haitao, and James F. Scott, eds. Ferroelectric Materials for Energy Applications. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2018. http://dx.doi.org/10.1002/9783527807505.

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Alexe, Marin, and Alexei Gruverman, eds. Nanoscale Characterisation of Ferroelectric Materials. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-08901-9.

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Ramesh, R., ed. Thin Film Ferroelectric Materials and Devices. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4615-6185-9.

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1960-, Ramesh R., ed. Thin film ferroelectric materials and devices. Boston: Kluwer Academic Publishers, 1997.

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Strukov, Boris A. Ferroelectric Phenomena in Crystals: Physical Foundations. Berlin, Heidelberg: Springer Berlin Heidelberg, 1998.

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Goh, Wei C. Sol-gel processing of relaxor ferroelectric materials. Manchester: UMIST, 1996.

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Jesús, Ricote, and SpringerLink (Online service), eds. Multifunctional Polycrystalline Ferroelectric Materials: Processing and Properties. Dordrecht: Springer Science+Business Media B.V., 2011.

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Lines, Malcolm E. Principles and applications of ferroelectrics and related materials. Oxford: Clarendon Press, 2001.

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J, Taylor Deborah, ed. Ferroelectric film devices. San Diego: Academic Press, 2000.

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Book chapters on the topic "Ferroelectric Materials"

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Whatmore, Roger. "Ferroelectric Materials." In Springer Handbook of Electronic and Photonic Materials, 1. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48933-9_26.

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Whatmore, Roger. "Ferroelectric Materials." In Springer Handbook of Electronic and Photonic Materials, 597–623. Boston, MA: Springer US, 2006. http://dx.doi.org/10.1007/978-0-387-29185-7_27.

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Gevorgian, Spartak, and Anatoli Deleniv. "Ferroelectric Devices." In Engineering Materials and Processes, 175–223. London: Springer London, 2009. http://dx.doi.org/10.1007/978-1-84882-507-9_5.

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Bhatnagar, Akash. "Ferroelectric Photovoltaics." In Ferroelectric Materials for Energy Applications, 61–94. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2018. http://dx.doi.org/10.1002/9783527807505.ch3.

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Walba, David M. "Ferroelectric Liquid Crystal Conglomerates." In Materials-Chirality, 457–518. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2004. http://dx.doi.org/10.1002/0471471895.ch8.

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Huey, Bryan D., S. K. Streiffer, M. J. Highland, T. T. Fister, D. D. Fong, P. H. Fuoss, Carol Thompson, et al. "Nanosession: Ferroelectric Interfaces." In Frontiers in Electronic Materials, 399–408. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527667703.ch59.

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van Dijken, Sebastiaan. "Hybrid Ferromagnetic/Ferroelectric Materials." In Handbook of Spintronics, 365–98. Dordrecht: Springer Netherlands, 2016. http://dx.doi.org/10.1007/978-94-007-6892-5_18.

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Kong, Ling B., Haitao Huang, and Sean Li. "Fundamentals of Ferroelectric Materials." In Ferroelectric Materials for Energy Applications, 1–31. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2018. http://dx.doi.org/10.1002/9783527807505.ch1.

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van Dijken, Sebastiaan. "Hybrid Ferromagnetic/Ferroelectric Materials." In Handbook of Spintronics, 1–29. Dordrecht: Springer Netherlands, 2015. http://dx.doi.org/10.1007/978-94-007-7604-3_18-1.

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Kumar, Viswanathan. "Ferroelectric Glass-Ceramics." In Advanced Sensor and Detection Materials, 229–64. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118774038.ch8.

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Conference papers on the topic "Ferroelectric Materials"

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Ramesh, Prashanth, and Gregory Washington. "Analysis and Design of Smart Electromagnetic Structures." In ASME 2008 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. ASMEDC, 2008. http://dx.doi.org/10.1115/smasis2008-603.

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Use of ferroelectric materials to improve antenna performance is an area of active research. Applying an electric field across a ferroelectric used as the dielectric in an antenna enables tuning the antenna performance. Ferroelectrics also have coupled electromechanical behavior due to which it is sensitive to mechanical strains and fluctuations in ambient temperature. Use of ferroelectrics in antenna structures, especially those subject to mechanical and thermal loads, requires knowledge of the phenomenological relationship between the ferroelectric properties of interest (especially dielectric permittivity) and the external physical variables, viz. electric field(s), mechanical strains and temperature. To this end, a phenomenological model of ferroelectric materials based on the Devonshire thermodynamic theory is presented. This model is then used to obtain a relationship expressing the dependence of the dielectric permittivity on the mechanical strain, applied electric field and ambient temperature. The relationship is compared with published experimental data and other models in literature. Subsequently, a relationship expressing the dependence of antenna performance on those physical quantities is described.
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Gookin, Debra M., and G. W. Gross. "Effect of applied electric fields on beam coupling in ferroelectrlcs." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1986. http://dx.doi.org/10.1364/oam.1986.mv5.

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Ferroelectrics, such as BaTiO3, have large electrooptic coefficients which make them useful photorefractive materials. Diffraction efficiencies in photorefractive materials are improved by the application of electric fields. In ferroelectrics, as in nonferroelectrics, the improvement in diffraction efficiency is attributable to increased drift. However in ferroelectrics at least one other mechanism contributes to the effect of electric fields on beam coupling. When an electric field is applied to a ferroelectric, even at room temperature, some polarization reversal (reversal of the c axis) takes place. Both mechanisms can cause the direction of optical gain to switch. We present a theory of the interaction of electric fields with ferroelectric materials and the consequences of these interactions on optical beam coupling via two-wave mixing.
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Park, S. B., S. S. Park, G. P. Carman, and H. T. Hahn. "Polarization Switching for Ferroelectric Materials." In ASME 1996 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1996. http://dx.doi.org/10.1115/imece1996-0675.

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Abstract In this paper we present the results of an experimental study focused on understanding the strain concentrations arising due to nonlinear phenomena associated with polarization switching. A Moire interferometry technique is used to measure the normal and shear strains of a PZT-5H piezoceramics undergoing 180° and 90° switching. These results include the strain concentrations measured between polarized regions oriented 180° and 90° apart. The results show that very large strain mismatches (e.g. as large as 4500 microstrains) occur along the boundary of dissimilar oriented domains, suggesting a source of microcrack initiation and fatigue degradation.
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Wang, Donghui. "Analysis of several ferroelectric materials." In 2016 4th International Conference on Mechanical Materials and Manufacturing Engineering. Paris, France: Atlantis Press, 2016. http://dx.doi.org/10.2991/mmme-16.2016.210.

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Oyhenart, L., and V. Vigneras. "Tunable photonic crystals using ferroelectric materials." In 2006 13th IEEE International Conference on Electronics, Circuits and Systems. IEEE, 2006. http://dx.doi.org/10.1109/icecs.2006.379811.

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Whatmore, Roger W., S. B. Stringfellow, and N. M. Shorrocks. "Ferroelectric materials for uncooled thermal imaging." In SPIE's 1993 International Symposium on Optics, Imaging, and Instrumentation, edited by Bjorn F. Andresen and Freeman D. Shepherd. SPIE, 1993. http://dx.doi.org/10.1117/12.160576.

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Shin, Changhwan. "CMOS Device Design with Ferroelectric Materials." In 2021 China Semiconductor Technology International Conference (CSTIC). IEEE, 2021. http://dx.doi.org/10.1109/cstic52283.2021.9461588.

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Whatmore, R. W. "Ferroelectric materials in microsystems and nanotechnology." In IEE Seminar on Microtechnology Meets Nanoscience - a Commercial Opportunity? IEE, 2004. http://dx.doi.org/10.1049/ic:20040157.

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Lynch, Christopher S., Wei Chen, and Teiqi Liu. "Multiaxial constitutive behavior of ferroelectric materials." In SPIE's 7th Annual International Symposium on Smart Structures and Materials, edited by Christopher S. Lynch. SPIE, 2000. http://dx.doi.org/10.1117/12.388208.

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Mazin, I. I., and D. J. Singh. "Weighted density functionals for ferroelectric materials." In The 5th Williamsburg workshop on first-principles calculations for ferroelectrics. AIP, 1998. http://dx.doi.org/10.1063/1.56276.

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Reports on the topic "Ferroelectric Materials"

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Raengthon, Natthaphon. Cation vacancy defect in modified barium titanate ferroelectric ceramics. Chulalongkorn University, 2021. https://doi.org/10.58837/chula.res.2021.22.

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Abstract:
Development of advanced technologies for electronic applications, particularly aiming to increase energy efficiency and sustainability, are increasing in demand for regular usage. A majority of this development involves improvement of material's properties. Researcher has been continuously studied and developed new electronic material. Ferroelectric ceramic is one of many materials that is of interest, for example, lead-based (e.g. Pb(Mg₁/₃Nb₂/₃)O₃: PMN) and lead-free (e.g. Ba(Zr,Ti)O₃: BZT) materials. It is, however, known that the RoHS (Restriction of Hazardous Substances Directive) listed Lead (Pb) as one of the hazardous materials and is restricted for using in many electronic applications. Therefore, the development of lead-free materials has increased in attention and there is many more aspects of research to be explored. The electrical properties of relaxor ferroelectric ceramics, especially dielectric and ferroelectric behaviors, are improved from normal ferroelectric ceramic, which led to the usage of these materials in various applications such as capacitors and piezoelectric devices. A majority of researches focuses on fundamental understanding of relaxor behavior both experimentally and theoretically as well as device development based on these materials. In fabrication process, it is common to find defects in polycrystalline materials, which can be in a range of atomicscale to micro-scale. These defects play major roles in controlling electrical properties of the ceramics. In some applications, defects can be advantage as to improve the properties of the devices. On the other hand, properties of devices can be deteriorated by the present of defects leading to electrical fatigue and failure of devices under extreme conditions. It is, therefore, important to understand how cation vacancy defect affects electrical properties of modified barium titanate ferroelectric ceramics. The effect of Acation non-stoichiometry on the electrical properties of barium strontium titanate ceramics is an interesting topic of investigation. This study examined the stoichiometric, Ba-excess, Ba-deficient, Sr-excess and Sr-deficient compositions of (Ba₀.₈Sr₀.₂)Ti0₃ ceramics. A-cation non-stoichiometry of (Ba₀.₈₀Sr₀.₂₀)TiO₃ ceramics affected dielectric properties differently. The Ba- and Sr-excess compositions decreased dielectric constant at Tmax while still maintaining broad phase transition characteristics. In contrast, dielectric constant increased in the Ba- and Sr-deficient compositions. The characteristics of electrical conduction are different at high temperatures when Ba- and Sr-deficiency is introduced to the dielectrics. Ti⁴⁺ state for the Ba-deficient composition is maintained. However, Ti⁴⁺state partially changes to Ti³⁺ state, giving rise in the polaron hopping conduction process for Sr-deficient composition. Therefore, this study shows that minor deviation of A-cation from stoichiometry can induce a different conduction process while maintaining the dielectric permittivity characteristics.
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Jardine, Andrew P. Ferroelectric Heterostructures Materials Development, Modeling & Testing. Fort Belvoir, VA: Defense Technical Information Center, September 1997. http://dx.doi.org/10.21236/ada378815.

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Ball, Brian L., Ralph C. Smith, Sang-Joo Kim, and Stefan Seelecke. A Stress-Dependent Hysteresis Model for Ferroelectric Materials. Fort Belvoir, VA: Defense Technical Information Center, January 2005. http://dx.doi.org/10.21236/ada440136.

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Smith, Ralph C., Andrew Hatch, Binu Mukhergee, and Shifang Liu. A Homogenized Energy Model for Hysteresis in Ferroelectric Materials: General Density Formulation. Fort Belvoir, VA: Defense Technical Information Center, January 2004. http://dx.doi.org/10.21236/ada452029.

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Hong, Xia. Final Report on "Nanoscale Ferroelectric Control of Novel Electronic States in Layered Two-Dimensional Materials". Office of Scientific and Technical Information (OSTI), March 2023. http://dx.doi.org/10.2172/1964211.

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Smith, Ralph C., and Zhengzheng Hu. The Homogenized Energy Model (HEM) for Characterizing Polarization and Strains in Hysteretic Ferroelectric Materials: Material Properties and Uniaxial Model Development. Fort Belvoir, VA: Defense Technical Information Center, January 2012. http://dx.doi.org/10.21236/ada556960.

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Wang, Yu U. SISGR -- Domain Microstructures and Mechanisms for Large, Reversible and Anhysteretic Strain Behaviors in Phase Transforming Ferroelectric Materials. Office of Scientific and Technical Information (OSTI), December 2013. http://dx.doi.org/10.2172/1111107.

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Halasyamani, Shiv, and Craig Fennie. Controlling Magnetic and Ferroelectric Order Through Geometry: Synthesis, Ab Initio Theory, Characterization of New Multi-Ferric Fluoride Materials. Office of Scientific and Technical Information (OSTI), November 2016. http://dx.doi.org/10.2172/1331973.

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J. Toulouse. Nanoscopic Study of the Polarization-Strain Coupling in Relaxor Ferroelectric and the Search for New Relaxor Materials for Transducer and Optical Applications. Office of Scientific and Technical Information (OSTI), May 2007. http://dx.doi.org/10.2172/908152.

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Hu, Zhengzheng, Ralph C. Smith, and Jon Ernstberger. The Homogenized Energy Model (HEM) for Characterizing Polarization and Strains in Hysteretic Ferroelectric Materials: Implementation Algorithms and Data-Driven Parameter Estimation Techniques. Fort Belvoir, VA: Defense Technical Information Center, January 2012. http://dx.doi.org/10.21236/ada556961.

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